CN113295303A - Aluminum nitride piezoelectric MEMS resonant pressure sensor - Google Patents
Aluminum nitride piezoelectric MEMS resonant pressure sensor Download PDFInfo
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- CN113295303A CN113295303A CN202110473345.9A CN202110473345A CN113295303A CN 113295303 A CN113295303 A CN 113295303A CN 202110473345 A CN202110473345 A CN 202110473345A CN 113295303 A CN113295303 A CN 113295303A
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 29
- 238000001514 detection method Methods 0.000 claims abstract description 34
- 238000007789 sealing Methods 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000005137 deposition process Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 abstract 7
- 229910017083 AlN Inorganic materials 0.000 abstract 6
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 16
- 230000000694 effects Effects 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 244000126211 Hericium coralloides Species 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/10—Measuring force or stress, in general by measuring variations of frequency of stressed vibrating elements, e.g. of stressed strings
- G01L1/106—Constructional details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/08—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of piezoelectric devices, i.e. electric circuits therefor
Abstract
The aluminium nitride piezoelectricity MEMS resonant mode pressure sensor, this chip structure includes: the pressure sensitive layer, the AlN piezoelectric resonance structural unit and the sealing cover plate layer. The pressure sensitive layer comprises a pressure sensing film structure and two boss structures, and the pressure sensing film structure is connected with the AlN piezoelectric resonance structural unit through a boss. The AlN piezoelectric resonance structure unit comprises an upper electrode layer, an aluminum nitride piezoelectric layer, a lower electrode layer and an insulating layer; the upper electrode comprises a driving electrode and a detection electrode which are respectively used for driving the AlN piezoelectric resonance structural unit to generate resonance and detecting an output signal, and the upper electrode is strip-shaped and is positioned on two sides of the central line of the upper surface of the AlN structure. The sealing cover plate layer comprises a groove and an electrode through hole, and the sealing cover plate layer is connected with the AlN piezoelectric resonance structural unit through a bonding process to form a vacuum sealing cavity. The resonant pressure sensor can effectively reduce the process manufacturing difficulty and improve the reliability of the sensor.
Description
Technical Field
The invention relates to a resonant pressure sensor of a piezoelectric MEMS (micro-electromechanical system) of aluminum nitride, belonging to the technical field of sensitive chips of microelectronic pressure sensors.
Background
The MEMS pressure sensor has the characteristics of small volume, high precision, low cost, easy integration and the like. Pressure sensors based on MEMS technology have been widely used in various fields such as consumer electronics, industrial electronics, military aerospace, and the like. According to different working principles, the method can be divided into the following steps: piezoresistive pressure sensors, capacitive pressure sensors, piezoelectric pressure sensors, resonant pressure sensors, and the like. Among them, the resonant pressure sensor has the advantages of high comprehensive precision, good long-term stability, etc., and has been accepted by the academic research field and the industrial field.
The MEMS resonant pressure sensor has the working principle that: resonance structure is supported on the pressure sensing membrane admittedly via the boss, and when external pressure acted on the pressure sensing membrane, the pressure sensing membrane takes place bending deformation, and this bending deformation can produce tensile or squeezing action to resonance structure via the boss for resonance structure's resonant frequency changes, detects external pressure's size through detecting resonant frequency. According to the difference of the driving detection principle, the MEMS resonant pressure sensor can be further divided into: an electromagnetic drive-electromagnetic detection type, an electrostatic drive-piezoresistive detection type, an electrostatic drive-capacitance detection type, a piezoelectric drive-piezoelectric detection type, and the like.
The electromagnetic drive-electromagnetic detection type MEMS resonant pressure sensor needs a stable magnetic field environment, which limits the use scene of the type of sensor and the miniaturization and the batch production of the sensor.
The electrostatic driving-piezoresistive detection type and electrostatic driving-capacitance detection type MEMS resonant pressure sensors are prepared based on Si materials, and because the electrostatic driving capability of a parallel plate capacitance structure is weak, in order to improve the electrostatic driving capability, a comb capacitance structure is mostly adopted for driving. But the characteristics of small gap between the comb teeth, many pairs of the comb teeth and the like provide extremely high requirements for the MEMS processing technology, the high etching depth-to-width ratio greatly increases the difficulty of the etching technology, and simultaneously reduces the yield of chips. In addition, the sealing cover plate layer, the resonance structure layer and the pressure sensitive layer are usually connected by adopting a mode of bonding twice, and bonding deviation between the resonance structure layer and the pressure sensitive layer can cause dislocation of a boss and a fixed supporting point of the resonance structure, so that the performance of the device is reduced.
The quartz material based resonant pressure sensor is one of piezoelectric driving-piezoelectric detection type sensors, but the quartz material needs to prepare side electrodes on the side wall of the resonant structure for driving or detection besides preparing electrodes on the upper and lower surfaces of the resonant structure, and the preparation of the side electrodes is incompatible with the conventional microelectronic planar process, so that the preparation process is difficult. In addition, the quartz resonant pressure sensor is large in size, typically on the order of centimeters, and thus miniaturization and integration of the device are difficult to achieve.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the defects of the prior art are overcome, the aluminum nitride piezoelectric MEMS resonant pressure sensor is provided, the sensor is of a piezoelectric driving-piezoelectric detection type, and an AlN resonant structure unit can be driven to resonate only by designing an upper electrode and a lower electrode according to the characteristics of an AlN piezoelectric material and the inverse piezoelectric effect of the AlN piezoelectric material. And detecting an output signal at a detection end through an upper electrode and a lower electrode according to the positive piezoelectric effect. The whole preparation process is compatible with the conventional microelectronic plane preparation process, does not need a side electrode, and is easy to realize miniaturization and integration. Meanwhile, the comb is simple in structure, a complex comb tooth structure is avoided, and the process difficulty is reduced.
The technical scheme of the invention is as follows:
an aluminum nitride piezoelectric MEMS resonant pressure sensor, comprising: the device comprises a pressure sensitive layer, an AlN piezoelectric resonance structural unit and a sealing cover plate layer;
the pressure sensitive layer is connected with the AlN piezoelectric resonance structure unit through a boss, and the AlN piezoelectric resonance structure unit is connected with the sealing cover plate layer through bonding to form a vacuum absolute pressure cavity;
the pressure sensitive layer includes: pressure sensing membrane and 2 bosss, the boss is connected pressure sensing membrane and AlN piezoelectricity resonance constitutional unit.
The AlN piezoelectric resonance structural unit sequentially comprises from top to bottom: upper electrode, aluminum nitride piezoelectric layer, lower electrode and SiO2A layer;
the upper electrode comprises 2 driving electrodes and 2 detection electrodes;
the upper electrodes are all strip-shaped; the 2 driving electrodes and the 2 detection electrodes are positioned on the left side and the right side of the upper surface of the aluminum nitride piezoelectric layer and are symmetrically distributed around a central line; the driving electrodes and the detection electrodes are symmetrically distributed around the center of the resonance unit;
the aluminum nitride piezoelectric layer is in a strip shape and is of a double-end fixed support structure, and a fixed support end point is positioned above the two bosses; the lower electrode is positioned on the lower surface of the whole aluminum nitride piezoelectric layer. SiO 22A layer on the lower surface of the lower electrode, SiO2The lower surface of the layer is directly connected with the lug boss;
the sealing cover plate layer comprises 6 electrode through holes and 1 groove, one surface of the groove of the sealing cover plate is bonded with the upper surface of the AlN piezoelectric resonance structure unit, and a vacuum absolute pressure cavity is formed.
The pressure sensitive layer is made of silicon wafers or SOI wafers, and materials of all layers of the AlN piezoelectric resonance structural unit are deposited on the substrate wafers in sequence in a growing mode by taking the pressure sensitive layer as a substrate; the material layer is sequentially Si or SOI wafer and SiO from bottom to top2The lower electrode, the aluminum nitride piezoelectric layer and the upper electrode;
wherein SiO is2The layer is prepared on the Si surface by a deposition process or a thermal oxidation process.
The AlN piezoelectric resonance structural unit and the boss structure are prepared by etching sequentially from top to bottom by adopting an etching process.
The lower electrode is grounded, and a pair of differential driving signals is applied to 2 driving electrodes, or a driving signal is applied to only the first driving electrode, or a driving signal is applied to only the second driving electrode to drive the AlN piezoelectric resonance structural unit to generate in-plane resonance.
The lower electrode is grounded and a pair of differential output signals is extracted on 2 detection electrodes, or the output signal is extracted only on the first detection electrode, or the output signal is extracted only on the second detection electrode.
The positions of the electrode through holes correspond to a driving electrode lead point, a detection electrode lead point and a lower electrode lead point of the AlN piezoelectric resonance structural unit;
the position of the groove corresponds to the pressure sensing film, and the area of the groove is larger than or equal to that of the pressure sensing film.
2 bosss are located the edge of pressure sensing membrane respectively, and two bosss are the symmetric distribution about the pressure sensing membrane center.
Compared with the prior art, the invention has the beneficial effects that:
1) the AlN piezoelectric MEMS resonant pressure sensor adopts the basic principle of piezoelectric driving-piezoelectric detection. According to the inverse piezoelectric effect, the resonance structural unit can be driven to resonate by applying a driving signal to the upper electrode and the lower electrode of the AlN piezoelectric layer. And detecting an output signal at a detection end through an upper electrode and a lower electrode according to the positive piezoelectric effect. Compared with the traditional quartz piezoelectric resonant pressure sensor, the AlN piezoelectric MEMS resonant pressure sensor disclosed by the invention does not need side electrodes, can realize driving and detecting functions only through the upper and lower electrodes, and reduces the process difficulty. Compatible with microelectronic process, and easy to realize miniaturization and integration.
2) The invention adopts the driving and detecting principle based on the AlN piezoelectric effect, and has high electromechanical conversion efficiency compared with a Si resonant pressure sensor based on the electrostatic effect principle. And no complex electrode with a comb tooth structure is needed, so that the process difficulty is reduced.
Drawings
FIG. 1 is a schematic overall three-dimensional structure of the sensor of the present invention.
Fig. 2 is a schematic three-dimensional structure diagram of the sealing cover layer of the sensor of the present invention.
Fig. 3 is a top view of an AlN resonant structure unit of the sensor of the present invention.
FIG. 4 is a schematic diagram of the three-dimensional structure of the pressure-sensitive layer of the sensor of the present invention.
Detailed Description
According to the AlN piezoelectric resonance structure unit, materials of all layers are prepared on the wafer of the pressure sensitive layer through a film growth process, so that the bonding between the conventional resonance structure unit and the pressure sensitive layer is avoided, the position deviation between the boss and the fixed support end of the resonance structure caused by bonding alignment errors is effectively avoided, and the performance of the sensor is improved.
The invention is described in further detail below with reference to the figures and the detailed description.
An aluminum nitride piezoelectric MEMS resonant pressure sensor, comprising: the device comprises a pressure sensitive layer 1, an AlN piezoelectric resonance structural unit 2 and a sealing cover plate layer 3;
as shown in fig. 4, the pressure sensitive layer 1 is connected with the AlN piezoelectric resonant structure unit 2 via a boss 102, and the AlN piezoelectric resonant structure unit 2 is bonded with the sealing cover layer 3 to form a vacuum pressure-insulating cavity;
the pressure-sensitive layer 1 includes: a pressure sensing film 101 and 2 bosses 102, wherein the bosses 102 are connected with the pressure sensing film 101 and the AlN piezoelectric resonant structural unit 2.
As shown in fig. 1, the AlN piezoelectric resonance structural unit 2 includes, from top to bottom: an upper electrode 201, an aluminum nitride piezoelectric layer 202, a lower electrode 203 and SiO2A layer 204;
the upper electrode 201 includes 2 driving electrodes and 2 detecting electrodes;
the upper electrodes 201 are all strip-shaped; the 2 driving electrodes and the 2 detection electrodes are positioned on the left side and the right side of the upper surface of the aluminum nitride piezoelectric layer 202 and are symmetrically distributed around a central line; the driving electrodes and the detection electrodes are symmetrically distributed around the center of the resonance unit;
as shown in fig. 3, the aluminum nitride piezoelectric layer 202 is in a long strip shape and has a double-end clamped structure, and a clamped end point is located above the two bosses 102; the lower electrode 203 is located on the lower surface of the entire aluminum nitride piezoelectric layer 202. SiO 22 Layer 204 is located on the lower surface of the lower electrode 203, SiO2The underside of layer 204 is directly connected to boss 102;
as shown in fig. 2, the sealing cover plate layer 3 includes 6 electrode through holes 301 and 1 groove 302, and one surface of the groove of the sealing cover plate 3 is bonded to the upper surface of the AlN piezoelectric resonant structure unit 2, forming a vacuum pressure-insulated chamber.
The pressure sensitive layer 1 is made of silicon wafers or SOI wafers, and materials of all layers of the AlN piezoelectric resonance structural unit 2 are deposited on the substrate wafers in sequence in a growing mode by taking the pressure sensitive layer 1 as a substrate; the material layer is sequentially Si or SOI wafer and SiO from bottom to top2The lower electrode, the aluminum nitride piezoelectric layer and the upper electrode;
wherein SiO is2The layer is prepared on the Si surface by a deposition process or a thermal oxidation process.
The AlN piezoelectric resonance structural unit 2 and the boss 102 are prepared by sequentially etching from top to bottom by adopting an etching process.
The lower electrode 203 is grounded, and a pair of differential driving signals is applied to 2 driving electrodes, or a driving signal is applied to only the first driving electrode 2011, or a driving signal is applied to only the second driving electrode 2012 to drive the AlN piezoelectric resonant structural unit 2 to generate in-plane resonance.
The lower electrode 203 is grounded, and a pair of differential output signals is extracted on 2 detection electrodes, or an output signal is extracted only on the first detection electrode 2013, or an output signal is extracted only on the second detection electrode 2014.
Processing an electrode through hole 301 and a groove 302 on the sealing cover plate layer 3;
the positions of the electrode through holes 301 correspond to the drive electrode lead point 205, the detection electrode lead point 206, and the lower electrode lead point 207 of the AlN piezoelectric resonance structural unit 2;
the position of the groove 302 corresponds to the pressure sensing film 101, and the area of the groove 302 is equal to or larger than the area of the pressure sensing film 101.
The 2 bosses 102 are respectively located at the edge of the pressure sensing film 101, and the two bosses 102 are symmetrically distributed around the center of the pressure sensing film.
Examples
Sequentially growing SiO with the thickness of 500nm on a Si wafer substrate2A layer, a 300nm thick Mo electrode layer, a 1.5 μm thick AlN layer and a 300nm thick Pt electrode layer. Wherein Mo is a lower electrode, Pt is an upper electrode, and the thickness of the Si wafer is 500 μm. By dry etchingSi deep etching is carried out on the lower surface of the Si wafer, the etching depth is 400 microns, and the Si pressure sensing film is prepared. Sequentially etching an upper electrode pattern, an AlN resonance structure, a lower electrode structure and SiO on the upper surface of the wafer by adopting a dry etching process2And (3) layer structure. And continuously etching by 50 microns by adopting a Si deep etching process to form a boss with the height of 50 microns. And finally, releasing the AlN piezoelectric resonance structure unit by adopting a dry release process to form a suspended structure.
The sealing cover plate material is a Si wafer, a groove is etched by adopting a dry etching process, and the depth of the groove is more than 10 mu m. And preparing the electrode through hole with a certain taper by adopting a micropore processing technology. And carrying out vacuum bonding on the sealing cover plate wafer and the AlN resonant structure wafer by adopting a slurry bonding process to form a vacuum absolute pressure cavity. And finally, depositing metal at the position of the electrode through hole, leading out an electrode wire and finishing the preparation of the sensor sensitive chip.
Those skilled in the art will appreciate that the details of the invention not described in detail in the specification are within the skill of those skilled in the art.
Claims (7)
1. The resonant pressure sensor of aluminum nitride piezoelectric MEMS, characterized by, include: the device comprises a pressure sensitive layer (1), an AlN piezoelectric resonance structural unit (2) and a sealing cover plate layer (3);
the pressure sensitive layer (1) is connected with the AlN piezoelectric resonance structure unit (2) through a boss (102), and the AlN piezoelectric resonance structure unit (2) is connected with the sealing cover plate layer (3) through bonding to form a vacuum absolute pressure cavity;
the pressure-sensitive layer (1) comprises: the structure comprises a pressure sensing film (101) and 2 bosses (102), wherein the bosses (102) are connected with the pressure sensing film (101) and the AlN piezoelectric resonance structural unit (2).
The AlN piezoelectric resonance structural unit (2) sequentially comprises from top to bottom: an upper electrode (201), an aluminum nitride piezoelectric layer (202), a lower electrode (203) and SiO2A layer (204);
the upper electrode (201) comprises 2 driving electrodes and 2 detection electrodes;
the upper electrodes (201) are all in a strip shape; the 2 driving electrodes and the 2 detection electrodes are positioned on the left side and the right side of the upper surface of the aluminum nitride piezoelectric layer (202) and are symmetrically distributed around a central line; the driving electrodes and the detection electrodes are symmetrically distributed around the center of the resonance unit;
the aluminum nitride piezoelectric layer (202) is in a long strip shape and is of a double-end fixed support structure, and a fixed support end point is positioned above the two bosses (102); the lower electrode (203) is positioned on the lower surface of the whole aluminum nitride piezoelectric layer (202). SiO 22A layer (204) of SiO on the lower surface of the lower electrode (203)2The lower surface of the layer (204) is directly connected with the boss (102);
the sealing cover plate layer (3) comprises 6 electrode through holes (301) and 1 groove (302), one surface of the groove of the sealing cover plate (3) is bonded with the upper surface of the AlN piezoelectric resonance structural unit (2) to form a vacuum absolute pressure cavity.
2. The resonant pressure sensor of the aluminum nitride piezoelectric MEMS (micro-electromechanical systems) as claimed in claim 1, wherein the material of the pressure sensitive layer (1) is a silicon wafer or an SOI (silicon on insulator) wafer, and the materials of the layers of the AlN piezoelectric resonant structural unit (2) are deposited on the substrate wafer by growing in sequence by taking the pressure sensitive layer (1) as a substrate; the material layer is sequentially Si or SOI wafer and SiO from bottom to top2The lower electrode, the aluminum nitride piezoelectric layer and the upper electrode;
wherein SiO is2The layer is prepared on the Si surface by a deposition process or a thermal oxidation process.
3. The aluminum nitride piezoelectric MEMS resonant pressure sensor according to claim 2, wherein the AlN piezoelectric resonant structural unit (2) and the boss (102) are sequentially etched from top to bottom by etching.
4. The resonant pressure sensor of aluminum nitride piezoelectric MEMS according to any one of claims 1 to 3, wherein the lower electrode (203) is grounded, and a pair of differential driving signals is applied to 2 driving electrodes (2011, 2012), or a driving signal is applied to only the first driving electrode (2011), or a driving signal is applied to only the second driving electrode (2012) to drive the AlN piezoelectric resonant structural unit (2) to generate in-plane resonance.
5. The aluminum nitride piezoelectric MEMS resonant pressure sensor according to claim 4, wherein the lower electrode (203) is grounded, and a pair of differential output signals is extracted on 2 detection electrodes (2013, 2014), or an output signal is extracted only on a first detection electrode (2013), or an output signal is extracted only on a second detection electrode (2014).
6. The aluminum nitride piezoelectric MEMS resonator pressure sensor according to claim 5, wherein the positions of the electrode through-holes (301) correspond to the driving electrode lead points (205), the detecting electrode lead points (206), and the lower electrode lead points (207) of the AlN piezoelectric resonator structural unit (2);
the position of the groove (302) corresponds to the pressure sensing film (101), and the area of the groove (302) is larger than or equal to that of the pressure sensing film (101).
7. The aluminum nitride piezoelectric MEMS resonant pressure sensor according to claim 6, wherein 2 mesas (102) are respectively located at the edge of the pressure sensing film (101), and the two mesas (102) are symmetrically distributed about the center of the pressure sensing film.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024041237A1 (en) * | 2022-08-26 | 2024-02-29 | 华为数字能源技术有限公司 | Resonant sensor, battery, battery pack and energy storage system |
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Application publication date: 20210824 |