CN101150300A - A method for making plane capacitance resonance machine - Google Patents
A method for making plane capacitance resonance machine Download PDFInfo
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- CN101150300A CN101150300A CNA2007101218615A CN200710121861A CN101150300A CN 101150300 A CN101150300 A CN 101150300A CN A2007101218615 A CNA2007101218615 A CN A2007101218615A CN 200710121861 A CN200710121861 A CN 200710121861A CN 101150300 A CN101150300 A CN 101150300A
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Abstract
This invention discloses a method for preparing plane capacitance resonators including: 1, LPCVD a Si3N4 layer on a silicon chip and carrying out a first time of photoetch and RIE etching the Si3N4 chip, 2, photoetching secondly and taking a photo resist as a mask to etch the silicon with an anisotropical dry method in an induction-coupled plasma system to form a deep groove, 3, oxidizing the etched chip and then corroding the oxidation layer with a wet method to smooth the side wall of the silicon structure, 4, LPCVD and etching the SiO2 to form a self-alligned oxidation layer on the side wall of the deep groove, 5, LPCVD polysilocon to hang a resonator structure, 7, HF corroding the SiO2 till the resonator is released to get a plane capacitance resonator.
Description
Technical Field
The invention relates to a method for preparing a nano-gap capacitor resonator.
Background
At present, the biggest obstacle to an integrated single chip with wireless communication function is to configure a high-Q resonator in the RF filtering and tank circuit, and the resonant frequency and Q value of the resonator need to be effectively increased in the aspect of resonant sensing detection so as to improve the sensitivity and resolution of the sensor.
The micro mechanical resonator mainly comprises a comb-shaped structure resonator, a cantilever beam resonator, a surface and bulk acoustic wave resonator and the like. Surface and bulk acoustic wave resonator technology has been put into practical use in communication systems, but such devices have relatively large power consumption and volume, are limited by the compatibility of the integrated circuit fabrication process, and cannot be integrated with ICs. The comb-shaped structure and the cantilever beam type resonator are made of polycrystalline silicon or monocrystalline silicon materials and are manufactured by utilizing a sacrificial layer process or a bulk silicon process, and one means for improving the resonant frequency of the comb-shaped structure and the cantilever beam type resonator is to reduce the geometric dimension. The application research of cantilever beam resonator mainly focuses on resonance sensing detection at present, and the mass sensitivity of a nano mechanical cantilever beam sensor working in a dynamic mode reaches 10 under a vacuum environment -18 The Q value of the resonator can reach 4500 in g/Hz, but the Q value of the resonator is only between 50 and 200 in the frequency range of 10kHz and 1MHz in the atmospheric environment.
Disclosure of Invention
The invention aims to provide a method for preparing a nano-gap capacitor resonator.
The method for preparing the nano-gap capacitor resonator comprises the following steps:
1) Taking a low-resistance silicon wafer with a (100) crystal face as a substrate, carrying out LPCVD (low pressure chemical vapor deposition) on a silicon wafer to form a silicon nitride layer, and carrying out first photoetching and RIE (reactive ion etching) on the silicon nitride layer to form a silicon nitride insulating layer;
2) Carrying out second photoetching, and etching silicon in an anisotropic dry method in an inductively coupled plasma system by taking the photoresist as a mask to form two deep grooves;
3) LPCVD deposition of SiO on silicon wafers 2 Layer, then RIE etching SiO on the silicon wafer surface 2 Layer of SiO on the side wall of the deep trench 2 The layer is preserved to form a self-aligned oxide layer;
4) Depositing polycrystalline silicon in the two deep grooves by LPCVD, wherein the thickness of the polycrystalline silicon is about half of the groove width, depositing the polycrystalline silicon by LPCVD after phosphorus diffusion, the thickness of the polycrystalline silicon is still half of the groove width, ensuring that the deep grooves are filled, and annealing the polycrystalline silicon to activate phosphorus atoms to form polar plates of a driving electrode and a sensing electrode; photoetching for the third time, and etching the polycrystalline silicon on the surface of the silicon wafer by ICP (inductively coupled plasma) to form a driving electrode and a bonding pad of a sensing electrode, thereby forming the sensing electrode and the driving electrode;
5) Sputtering metal, photoetching, corroding the metal, and forming an interconnection metal electrode on the bonding pad of the driving electrode and the sensing electrode;
6) Photoetching and ICP anisotropic etching silicon, and isotropically etching the silicon until the resonator is suspended; and corroding SiO2 by HF until the resonator is released, thus obtaining the planar capacitive resonator.
In order to planarize the surface of the resonator structure and reduce the energy loss caused by the surface effect, the following operations are also performed after step 2):
and oxidizing the etched silicon wafer, and then corroding the oxide layer by a wet method.
The invention provides a method for preparing a planar capacitive resonator.
Compared with a cantilever beam type resonator, firstly, the nano-gap capacitance resonator has extremely high resonant frequency and Q factor, so that the resonant sensor has very high sensitivity and resolution; secondly, the nano-gap capacitor resonator has sensing and driving electrodes with larger areas, so that the motion impedance of the nano-gap capacitor resonator is reduced, and the matching capability and the signal-to-noise ratio of the device are increased; thirdly, the nano-gap capacitor resonator can keep good mechanical properties under very low driving power; fourthly, the nanogap capacitive resonance sensor has a large surface area, and the detectable mass load capacity of the nanogap capacitive resonance sensor is higher than that of a flexible nano mechanical beam by several orders of magnitude; finally, the vibration mode of the nanogap capacitive resonator is parallel to the surface, so that the viscoelastic information of liquid molecules on the surface of the sensor can be provided. In addition, because the invention adopts the common silicon wafer to replace the SOI silicon wafer, the preparation cost is greatly reduced, meanwhile, the preparation method is simple, and the performance of the prepared device is consistent with that of the device prepared by adopting the SOI silicon wafer.
Drawings
FIG. 1 is a schematic perspective view of a dual-cantilever resonator according to the present invention;
FIG. 2 is a schematic top view of a dual-cantilever resonator according to the present invention;
FIG. 3 is a schematic perspective view of a disc resonator of the present invention;
figure 4 is a schematic top view of the disc resonator of the present invention;
fig. 5a to 5h are schematic diagrams of the process flow of the present invention for preparing a planar capacitive resonant sensor.
Fig. 6 is a microscope photograph of the completed two-branched-beam planar capacitive resonator.
Detailed Description
As shown in fig. 1 to 4, the planar capacitive resonator of the present invention includes a resonator body 2, a sensing electrode 3, a driving electrode 4, and a substrate 1 supporting them; the resonator 2 is a suspended structure and is fixedly supported on the substrate through an anchor point 5; the sensing electrode 3 consists of a pole plate 31 and a bonding pad 13, and the driving electrode 4 consists of a pole plate 41 and a bonding pad 13'; the polar plate 31 and the polar plate 41 are respectively arranged at two sides of the resonator 2, and a certain gap is kept between the polar plate 31 and the resonator 2, the polar plate 31, the polar plate 41 and the resonator 2 are used as capacitance polar plates, and the gap between every two is used as an intermediate medium to form a capacitance structure; the pads 13 and 13' are anchored to the substrate 1 by means of an insulating dielectric film 6, on which metal electrodes 7 are used to interconnect the resonator to an external driving power supply, detection system.
The shape of the resonator body can be selected from various suitable shapes, such as a double-branched beam type or a disk type, and the thickness of the resonator body is from several micrometers to tens of micrometers. For example, the beam length of the double-cantilever type resonator is between several tens of micrometers to 1 millimeter, and the width is several micrometers; the radius of the disc type planar capacitor resonator is from tens of microns to hundreds of microns. Because the thickness of the resonant body is far larger than the width of the resonant body, and the sensing and driving electrodes are positioned on two sides of the resonant body, the double-support-beam resonator generates flexible vibration in the transverse direction, the disc-type resonator performs bulk mode vibration along the radial direction, and the vibration direction is designed along the <110> crystal direction, so that the maximum resonant frequency is obtained.
The sensing electrode and the driving electrode are formed by etching a deep groove on the device layer and then backfilling LPCVD polysilicon into the deep groove, so that the sensing electrode and the driving electrode of the planar capacitive resonator are perpendicular to the substrate and are positioned at the anti-node position of the resonator, and the vibration amplitude of the resonator is the largest at the position. The deposited polysilicon is doped to ensure good conductivity, the doping includes in-situ doping and diffusion, if diffusion doping is selected, the diffusion is performed when the LPCVD polysilicon portion is completed, and then the polysilicon is deposited. And annealing at high temperature after the polysilicon deposition is finished so as to activate the doped atoms.
The resonator of the invention works in a transduction mode of capacitive driving and sensing, an alternating current signal is applied to the driving electrode, and a direct current bias is applied to the resonant body, so that an alternating current signal is output by the sensing electrode. Under the combined action of an alternating current signal and a direct current bias, sensing and driving electrode signals are coupled to the resonant body through a capacitor, an electrostatic force is applied to the resonant body, and resonance occurs when the frequency of an input signal is consistent with the resonant frequency. The resonance signal is coupled to the output electrode through the capacitance between the harmonic oscillator and the output electrode of the polycrystalline silicon, and the driving force and the output current signal can be respectively expressed as:
wherein V DC 、v ac Respectively, a dc bias voltage and an ac voltage signal, and C is a capacitor. Obviously, increase the diameterThe current bias and the reduction of the alternating voltage signal are necessary conditions for obtaining larger driving force and output current signals.
For a two-branch beam resonator, the resonant frequency is expressed as:
the length of the L resonator, the E Young modulus, the I moment of inertia and the mass of the M beam are obtained, and the lambda n is a frequency coefficient related to a vibration mode.
For a bulk mode resonator, the resonant frequency is expressed as:
wherein R is the radius of the harmonic oscillator, k is a frequency constant, 1.6002 for monocrystalline silicon with a <110> crystal orientation, and E, rho and nu are the Young modulus, density and Poisson ratio of the material respectively.
Equivalent motion impedance R of resonator m ∝d 4 and/Q, where d is the capacitor plate gap and Q is the quality factor. It is obvious that the dynamic characteristics of the resonator mainly depend on the properties of the resonator preparation material, the geometry of the resonator, the clamped mode and the like. The invention selects the monocrystalline silicon with high Young modulus and low Poisson ratio, reduces the gap d between the capacitor plates as much as possible, and optimizes the geometric dimension, so the resonator has high resonant frequency and Q factor, and the improvement of the resonant frequency and Q factor of the resonator means the improvement of the sensitivity and the resolution of the sensor.
The resonator can be prepared by using MEMS technology and high aspect ratio polysilicon/monocrystalline silicon combined process (HARPSS), and the main steps comprise: etching silicon deep groove and growing SiO by LPCVD 2 Sacrificial layer, polysilicon back filling deep groove to form polysilicon electrode, bulk silicon deep etching to define resonator structure, and etching SiO 2 The sacrificial layer suspends the resonator structure. Deep etching by Inductively Coupled Plasma (ICP) in etching technique of high aspect ratio deep grooveThe etching technology controls the etching time ratio to the passivation time ratio to be 2: 1-10: 1, so that the etched side wall is as smooth as possible, and the transverse underetching is reduced. After the deep groove is etched, the oxide layer is etched on the surface of the oxidation device by a wet method, and the thickness of the oxide layer is controlled to be 500nm-1 mu m, so that the surface of the resonator structure is flattened, and the energy loss caused by the surface effect is reduced. After the planarization is finished, depositing an oxide layer of 50-200nm by adopting an LPCVD technology, forming a self-alignment layer on the side wall of the resonator, taking the film as a sacrificial layer, and corroding the film by a wet method after the preparation of the resonator structure is finished, thereby releasing the resonator structure. The thickness of the oxide layer determines the vertical capacitance plate gap between the resonator body and the sensing electrode and between the resonator body and the driving electrode, and the size of the capacitance gap directly influences the equivalent motion impedance of the resonator, so the capacitance plate gap is required to be as small as possible. And depositing a polysilicon electrode in the deep groove by LPCVD technology, wherein the thickness of the polysilicon is determined by the width of the groove and is between 4 and 8 mu m. After the polysilicon electrode and the metal electrode for interconnection of the resonator are prepared, another silicon deep etching is carried out, wherein the shape of the resonator is further defined, and the structure is released. After the deep etching of the bulk silicon is finished, siO is corroded by a wet method 2 And releasing the resonator structure by the sacrificial layer to obtain the corresponding resonator.
If the method is applied to biochemical sensing detection, a gold film with the thickness of about 50nm needs to be deposited on the surface of the resonator, and a corresponding biochemical sensitive layer is assembled according to the type of a biochemical molecule to be detected. The resonator can be vacuum packaged through silicon/glass anodic bonding technology after the structure release is completed, so that the resonance loss is reduced.
Examples 1,
Fig. 5 is a flow chart of the preparation of the resonator of the present invention, and the specific steps are as follows:
1) Adopting a low-resistance single-side polished silicon wafer 1 with N-type (100) crystal face; performing LPCVD (low pressure chemical vapor deposition) on the SiNx layer 6 with the wavelength of 150nm on the silicon wafer, performing first photoetching and RIE (reactive ion etching) on the SiNx layer 6, wherein the dielectric layer 6 is used for isolating the polycrystalline silicon bonding pad 13 from the substrate 1 (shown in figure 5 a);
2) Performing second photoetching, and isotropically etching silicon in an inductively coupled plasma etching (ICP) system by using the photoresist as a mask to form two deep grooves 11, wherein the groove depth is between 10 and 20 micrometers, and the groove width is between 4 and 8 micrometers (figure 5 b);
3) Oxidizing the etched silicon wafer to a thickness of 500nm, and then corroding the silicon oxide by a wet method to flatten the side wall of the etched silicon structure;
4) LPCVD deposition of SiO on silicon wafers 2 Layer with thickness of 50nm-200nm, and RIE etching SiO on the surface of the silicon wafer 2 Layer of SiO on the side walls of the deep trenches 11 2 Layer 12 is retained (this is due to RIE etching away SiO from the surface and bottom surfaces only in the vertical direction 2 Thereby being capable of preserving SiO of the side wall 2 A layer); the SiO 2 Layer 12 will release the resonator body structure as a sacrificial layer, the thickness of which determines the gap of the resonator capacitor plates (fig. 5 c);
5) Depositing polycrystalline silicon in the deep groove 11 by LPCVD, the thickness of the polycrystalline silicon is about half of the groove width, and then carrying out phosphorus diffusion at 1000 ℃ for 1 hour; depositing polysilicon by LPCVD with a thickness of half of the groove width to ensure that the etched deep groove is filled to form polar plates 31 and 41 of the driving electrode 3 and the sensing electrode 4; annealing the polysilicon for 60 minutes under the conditions of nitrogen atmosphere and 1000 ℃ to activate phosphorus atoms; performing third photoetching, and etching polycrystalline silicon on the surface of the silicon wafer by ICP (inductively coupled plasma), and forming polycrystalline silicon pads 13 and 13' of the driving electrode 3 and the sensing electrode 4, so as to form the sensing electrode 3 and the driving electrode 4 (figure 5 d);
6) Sputtering 30/300nm chromium/gold, photoetching for the fourth time, corroding the chromium/gold, and forming metal electrodes 7 (figure 5 e) on the polycrystalline silicon bonding pads 13 and 13', wherein the metal electrodes 7 are used for connecting the driving electrodes 3 and the sensing electrodes 4 with an external driving power supply and a detection system;
7) Etching silicon by ICP anisotropic dry method at two sides of polar plates 31 and 41 of the driving electrode 3 and the sensing electrode 4 by fifth photoetching, wherein the depth is 10-20 micrometers (figure 5 f), and then etching silicon isotropically until the resonator structure 2 is suspended (figure 5 g);
8) HF etching SiO 2 Until the structure is released (fig. 5 h), a planar capacitive resonance is obtainedProvided is a device.
Fig. 6 is a microscope photograph of a finished dual-beam planar capacitive resonator, which has a length of 300 microns, a width of 6 microns, a thickness of 20 microns, and a capacitance plate gap of 100 nanometers, and includes two fixed supporting points at two ends of a resonator.
The first-order resonant frequency of the double-cantilever beam resonator with the width of 6 microns, the thickness of 20 microns and the length of 300 microns is 495kHz.
With the same operation, other dimensions of the double-cantilever resonator can be prepared:
the first-order resonant frequency of the double-cantilever beam resonator with the width of 6 microns, the thickness of 20 microns and the length of 500 microns is 198kHz.
The disc resonator can also be carried out by adopting the same operation flow as the above, and only a disc-shaped resonator and a polar plate structure with a corresponding shape need to be patterned in advance during etching:
for a disc resonator with a thickness of 3 microns and radii of 30 and 50 microns, respectively, the first order resonant frequencies are 148MHz and 88MHz, respectively.
Claims (3)
1. A method of making a planar capacitive resonator comprising the steps of:
1) Taking a low-resistance silicon wafer with a (100) crystal face as a substrate, carrying out LPCVD (low pressure chemical vapor deposition) on a silicon wafer to form a silicon nitride layer, and carrying out first photoetching and RIE (reactive ion etching) on the silicon nitride layer to form a silicon nitride insulating layer;
2) Carrying out second photoetching, and etching silicon in an anisotropic dry method in an inductively coupled plasma system by taking the photoresist as a mask to form two deep grooves;
3) LPCVD deposition of SiO on silicon wafers 2 Layer, then RIE etching SiO on the silicon wafer surface 2 Layer of SiO on the side walls of the deep trench 2 The layer is preserved to form a self-aligned oxide layer;
4) Depositing polysilicon in the two deep grooves by LPCVD, wherein the thickness of the polysilicon is about half of the groove width, depositing the polysilicon by LPCVD after phosphorus diffusion, the thickness of the polysilicon is still half of the groove width, ensuring that the deep grooves are filled, annealing the polysilicon to activate doped phosphorus atoms to form polar plates of a driving electrode and a sensing electrode; photoetching for the third time, and etching the polycrystalline silicon on the surface of the silicon wafer by ICP (inductively coupled plasma) to form a driving electrode and a bonding pad of a sensing electrode, thereby forming the sensing electrode and the driving electrode;
5) Sputtering metal, photoetching, corroding the metal, and forming an interconnection metal electrode on the bonding pad of the driving electrode and the sensing electrode;
6) Photoetching and ICP anisotropic etching silicon, and then isotropically etching the silicon until the resonator is suspended; and corroding SiO2 by HF until the resonator is released, thus obtaining the planar capacitive resonator.
2. The method of claim 1, wherein: after step 2), the following operations are also performed:
and oxidizing the etched silicon wafer, and then corroding the oxide layer by a wet method.
3. The production method according to claim 1, characterized in that: the surface of the resonator is also modified with a biochemical sensitive layer for detecting biochemical molecules.
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| CN102530820A (en) * | 2011-12-26 | 2012-07-04 | 南京邮电大学 | Dangling syntony photon device and preparation method thereof based on silicon substrate nitride |
| CN102942157A (en) * | 2012-10-12 | 2013-02-27 | 上海大学 | Flow sensor manufacturing method by the way of positive corrosion |
| CN102955200A (en) * | 2011-08-30 | 2013-03-06 | 上海华虹Nec电子有限公司 | Dry etching method for mono-crystalline silicon back etching of optical divider |
| CN102148613B (en) * | 2010-02-05 | 2014-04-16 | 北京大学 | Solid dielectric layer resonator and manufacture method thereof |
| CN107796996A (en) * | 2017-09-27 | 2018-03-13 | 浙江大学 | Bent beam micro-resonance type electrometer and charge detection method with single free end |
| CN113572443A (en) * | 2021-07-26 | 2021-10-29 | 吴江 | MEMS resonator preparation method based on electroplating process |
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- 2007-09-17 CN CN2007101218615A patent/CN101150300B/en not_active Expired - Fee Related
Cited By (11)
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| CN102148613B (en) * | 2010-02-05 | 2014-04-16 | 北京大学 | Solid dielectric layer resonator and manufacture method thereof |
| CN102955200A (en) * | 2011-08-30 | 2013-03-06 | 上海华虹Nec电子有限公司 | Dry etching method for mono-crystalline silicon back etching of optical divider |
| CN102530820A (en) * | 2011-12-26 | 2012-07-04 | 南京邮电大学 | Dangling syntony photon device and preparation method thereof based on silicon substrate nitride |
| CN102942157A (en) * | 2012-10-12 | 2013-02-27 | 上海大学 | Flow sensor manufacturing method by the way of positive corrosion |
| CN107796996A (en) * | 2017-09-27 | 2018-03-13 | 浙江大学 | Bent beam micro-resonance type electrometer and charge detection method with single free end |
| CN107796996B (en) * | 2017-09-27 | 2020-03-24 | 浙江大学 | Bending beam micro-resonance type electrostatic meter with single free end and charge detection method |
| CN113595522A (en) * | 2021-07-13 | 2021-11-02 | 重庆胜普电子有限公司 | Method for manufacturing aluminum nitride lamb wave resonator |
| CN113572443A (en) * | 2021-07-26 | 2021-10-29 | 吴江 | MEMS resonator preparation method based on electroplating process |
| CN113572443B (en) * | 2021-07-26 | 2024-02-09 | 吴江 | MEMS resonator preparation method based on electroplating process |
| CN117792332A (en) * | 2024-02-23 | 2024-03-29 | 电子科技大学 | Electric tuning film bulk acoustic resonator based on large stress loading structure |
| CN117792332B (en) * | 2024-02-23 | 2024-05-03 | 电子科技大学 | Electric tuning film bulk acoustic resonator based on large stress loading structure |
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