CN113292236A - Mini-LED substrate through hole forming method and electronic equipment - Google Patents
Mini-LED substrate through hole forming method and electronic equipment Download PDFInfo
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- CN113292236A CN113292236A CN202110557577.2A CN202110557577A CN113292236A CN 113292236 A CN113292236 A CN 113292236A CN 202110557577 A CN202110557577 A CN 202110557577A CN 113292236 A CN113292236 A CN 113292236A
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- 239000000758 substrate Substances 0.000 title claims abstract description 100
- 238000000034 method Methods 0.000 title claims abstract description 79
- 239000011521 glass Substances 0.000 claims abstract description 73
- 238000005530 etching Methods 0.000 claims abstract description 46
- 239000002253 acid Substances 0.000 claims abstract description 23
- 230000008569 process Effects 0.000 claims abstract description 23
- 238000005406 washing Methods 0.000 claims abstract description 12
- 238000005554 pickling Methods 0.000 claims abstract description 6
- 230000005587 bubbling Effects 0.000 claims description 21
- 239000000243 solution Substances 0.000 claims description 21
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 20
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000009471 action Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005553 drilling Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000007688 edging Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
- C03B33/0222—Scoring using a focussed radiation beam, e.g. laser
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
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- Engineering & Computer Science (AREA)
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- Materials Engineering (AREA)
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- Optics & Photonics (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
The invention provides a method for forming a Mini-LED substrate through hole and electronic equipment, wherein the method for forming the Mini-LED substrate through hole comprises the following steps: obtaining a glass substrate with a preset thickness and a preset size, wherein the glass substrate comprises a first surface and a second surface which are oppositely arranged; laser equipment is adopted to laser out a plurality of through hole shapes with preset shapes on a first surface and a second surface of the glass substrate, wherein the through hole shapes on the first surface and the second surface are in one-to-one correspondence; etching treatment is carried out based on the through hole shape to form a through hole; and carrying out acid washing treatment on the through hole. The forming method is based on double-sided laser and etching treatment and combined with acid pickling treatment, and overcomes the technical problems that the brightness of the inner wall of the substrate is insufficient and thick glass is difficult to pass through in the process of glass substrate passing through holes in the existing Mini-LED, so that the problem that the hole diameter of the glass substrate is bright is successfully solved, and meanwhile, the thick glass passing through holes can be realized.
Description
Technical Field
The invention relates to the technical field of semiconductor processes, in particular to a method for forming a Mini-LED substrate through hole and electronic equipment.
Background
With the continuous development of scientific technology, LEDs (Light Emitting diodes) are used as novel Light Emitting devices, and compared with traditional Light Emitting devices, LEDs have the advantages of energy saving, environmental protection, good color rendering and response speed, and the like, and are widely applied to life and work of people, thereby bringing great convenience to daily life of people.
Based on a Mini-LED (Mini light Emitting diode) chip, the LED chip has a chip size of about 50 μm to 200 μm, is a novel backlight technology based on an LCD (Liquid crystal display), has the advantages of low power consumption, thin thickness, low delay, flexibility, punching capability and the like, and is widely applied to backlight displays, notebooks, tablet computers, televisions and the like.
However, the formation of the through holes on the Mini-LED substrate at present has more or less problems, and the high quality requirements of the devices cannot be met.
Disclosure of Invention
In view of the above, in order to solve the above problems, the present invention provides a method for forming a via hole of a Mini-LED substrate and an electronic device, and the technical solution is as follows:
a method for forming a Mini-LED substrate through hole comprises the following steps:
obtaining a glass substrate with a preset thickness and a preset size, wherein the glass substrate comprises a first surface and a second surface which are oppositely arranged;
laser equipment is adopted to laser out a plurality of through hole shapes with preset shapes on a first surface and a second surface of the glass substrate, wherein the through hole shapes on the first surface and the second surface are in one-to-one correspondence;
etching treatment is carried out based on the through hole shape to form a through hole;
and carrying out acid washing treatment on the through hole.
Preferably, in the above forming method, the obtaining of the glass substrate with a preset thickness and a preset size includes:
selecting the large-size glass substrate with the preset thickness;
and cutting the large-size glass substrate to form the glass substrate with the preset thickness and the preset size.
Preferably, in the above forming method, after the obtaining of the glass substrate with a preset thickness and a preset size, the forming method further includes:
and performing edge grinding and chamfering treatment on the glass substrate.
Preferably, in the above forming method, the performing an etching process based on the via profile to form a via hole includes:
placing the glass substrate into an etching groove;
and starting the first bubbling flow to perform etching treatment.
Preferably, in the above formation method, a flow rate of bubbling in the first bubbling process is 120L/min to 240L/min;
the etching temperature is 25-30 ℃;
the etching rate is 2um/min-3 um/min.
Preferably, in the above formation method, the etching solution used in the etching treatment is a hydrofluoric acid solution.
Preferably, in the above forming method, the subjecting of the through hole to an acid washing process includes:
placing the etched glass substrate into an acid pickling solution;
and starting the second bubbling process to carry out acid washing treatment.
Preferably, in the above formation method, a flow rate of bubbling in the second bubbling process is 120L/min to 240L/min;
the etching temperature is 25-30 ℃;
the etching rate is 2um/min-3 um/min.
Preferably, in the above forming method, the acid cleaning solution is a mixed solution of sulfuric acid and hydrofluoric acid;
wherein, sulfuric acid: 20 parts of hydrofluoric acid: 1.
an electronic device comprising at least a Mini-LED substrate;
wherein the through hole on the Mini-LED substrate is formed by any one of the above forming methods.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a method for forming a Mini-LED substrate through hole, which comprises the following steps: obtaining a glass substrate with a preset thickness and a preset size, wherein the glass substrate comprises a first surface and a second surface which are oppositely arranged; laser equipment is adopted to laser out a plurality of through hole shapes with preset shapes on a first surface and a second surface of the glass substrate, wherein the through hole shapes on the first surface and the second surface are in one-to-one correspondence; etching treatment is carried out based on the through hole shape to form a through hole; and carrying out acid washing treatment on the through hole. The forming method is based on double-sided laser and etching treatment and combined with acid pickling treatment, and overcomes the technical problems that the brightness of the inner wall of the substrate is insufficient and thick glass is difficult to pass through in the process of glass substrate passing through holes in the existing Mini-LED, so that the problem that the hole diameter of the glass substrate is bright is successfully solved, and meanwhile, the thick glass passing through holes can be realized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic flow chart of a method for forming a through hole of a Mini-LED substrate according to an embodiment of the present invention;
FIGS. 2-4 are schematic structural diagrams corresponding to the forming method shown in FIG. 1 in an embodiment of the invention;
fig. 5 is a schematic flow chart illustrating another method for forming a through hole of a Mini-LED substrate according to an embodiment of the present invention;
fig. 6 is a schematic flow chart illustrating a method for forming a through hole in a Mini-LED substrate according to another embodiment of the present invention;
fig. 7 is a schematic flow chart illustrating a method for forming a through hole in a Mini-LED substrate according to another embodiment of the present invention;
fig. 8 is a schematic flow chart illustrating a method for forming a through hole in a Mini-LED substrate according to another embodiment of the present invention;
fig. 9 is a schematic structural diagram of an electronic device according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the process of the present invention, the inventors found that the Mini-led (minilight Emitting diode) chip is generally packaged by making the chips in a matrix type, and making other photosensitive materials such as a transition isolation photoresist layer on the electrode surface of the array chip.
A substrate such as metal, PCB (Printed Circuit Board) or glass is generally used as a substrate, and a through hole is formed in a corresponding region of the substrate.
However, in the case of a metal substrate or a PCB substrate, the through hole is formed by mechanically drilling the substrate, which results in a larger and non-uniform hole diameter of the through hole and a burr, thereby affecting the light emitting effect.
In the case of a glass substrate, a through hole is formed by directly punching the glass substrate in a laser drilling manner, which causes a frosting phenomenon on the inner wall of the through hole, and for a glass substrate with a relatively thick thickness, for example, a glass substrate with a thickness of 0.60mm or more, a through hole can not be formed by simple laser drilling.
Based on the technical scheme, the invention provides a method for forming a Mini-LED substrate through hole, which solves the technical problems that the inner wall of a substrate is insufficient in brightness, thick glass is difficult to pass through the hole and the like in the process of forming the glass substrate through hole in the existing Mini-LED, namely the problem that the aperture of the glass substrate through hole is bright is successfully solved, and meanwhile, the thick glass through hole can be realized.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Referring to fig. 1, fig. 1 is a schematic flow chart of a method for forming a through hole of a Mini-LED substrate according to an embodiment of the present invention.
The forming method comprises the following steps:
s101: as shown in fig. 2, a glass substrate 11 with a preset thickness and a preset size is obtained, wherein the glass substrate 11 comprises a first surface 12 and a second surface 13 which are oppositely arranged.
In this step, a glass substrate with a preset thickness and a preset size is obtained according to actual requirements, and the selection of the thickness and the size is not limited in the embodiment of the present invention.
S102: as shown in fig. 3 and 4, laser equipment is used to laser a plurality of through hole profiles with preset shapes on a first surface 12 and a second surface 13 of the glass substrate 11, wherein the through hole profiles on the first surface 12 and the second surface 13 are in one-to-one correspondence;
in this step, the description will be given only by taking the case where the outer shape of the through hole is circular, and the actual situation is not limited.
S103: etching treatment is carried out based on the through hole shape to form a through hole;
s104: and carrying out acid washing treatment on the through hole.
In the embodiment, the forming method is based on double-sided laser and etching treatment and combined with acid pickling treatment, and the technical problems that the brightness of the inner wall of the substrate is insufficient and thick glass is difficult to pass through in the process of glass substrate hole passing in the existing Mini-LED are solved, namely the problem of bright hole diameter of the glass substrate hole is successfully solved, and meanwhile, the thick glass hole passing can be realized.
Specifically, the etching solution penetrates through the laser trace (through hole shape), and the etching solution can erode the glass substrate after a period of time, so that all laser patterns are conducted to form the through hole with a preset shape.
Furthermore, the inner wall of the through hole is optimized by combining an acid washing treatment process, so that a high-quality through hole structure is obtained.
The forming method has the advantages that the speed of forming the through hole is high, and the through hole structure with the required small size can be formed.
The etching solution includes, but is not limited to, a hydrofluoric acid solution.
Optionally, in another embodiment of the present invention, referring to fig. 5, fig. 5 is a schematic flow chart of another method for forming a through hole of a Mini-LED substrate according to an embodiment of the present invention.
In S101, obtain the glass substrate of predetermineeing thickness and predetermineeing the size, the glass substrate includes relative first surface and the second surface that sets up, includes:
s1011: selecting the large-size glass substrate with the preset thickness;
s1012: and cutting the large-size glass substrate to form the glass substrate with the preset thickness and the preset size.
In this embodiment, based on the large-size glass substrate with the preset thickness, the optimal region in the large-size glass substrate is selected for cutting, so as to form the glass substrate with high quality, the preset thickness and the preset size, and avoid the occurrence of breakage of the subsequent glass substrate.
Optionally, in another embodiment of the present invention, referring to fig. 6, fig. 6 is a schematic flow chart of another method for forming a through hole of a Mini-LED substrate according to an embodiment of the present invention.
After the obtaining of the glass substrate with the preset thickness and the preset size, the forming method further includes:
s105: and performing edge grinding and chamfering treatment on the glass substrate.
In this embodiment, the plurality of edges of the glass substrate are subjected to edging and chamfering treatment, so as to prevent the glass substrate from cracking due to cutting residual sand cracks in a subsequent manufacturing process.
Optionally, in another embodiment of the present invention, referring to fig. 7, fig. 7 is a schematic flow chart of another method for forming a through hole of a Mini-LED substrate according to an embodiment of the present invention.
In step S103, performing an etching process based on the via profile to form a via, including:
s1031: placing the glass substrate into an etching groove;
s1032: and starting the first bubbling flow to perform etching treatment.
In this embodiment, the etching solution penetrates through the trace (via profile) of the laser, and the etching solution erodes the glass substrate over time, thereby allowing all the laser-irradiated patterns to be conducted to form the via of the predetermined shape.
The etching rate can be further improved in combination with the bubbling process.
The forming method has the advantages that the speed of forming the through hole is high, and the through hole structure with the required small size can be formed.
The etching solution includes, but is not limited to, a hydrofluoric acid solution.
Optionally, in another embodiment of the present invention, the bubbling flow rate in the first bubbling flow is 120L/min to 240L/min;
the etching temperature is 25-30 ℃;
the etching rate is 2um/min-3 um/min.
In this embodiment, for example, the bubbling flow rate is 130L/min or 168L/min or 196L/min or 234L/min or the like.
The etching temperature is 26.5 ℃, 28.3 ℃, 29.4 ℃ and the like.
The etching rate is 2.1um/min or 2.4um/min or 2.7um/min or 2.9um/min, etc.
Optionally, in another embodiment of the present invention, referring to fig. 8, fig. 8 is a schematic flow chart of another method for forming a through hole of a Mini-LED substrate according to an embodiment of the present invention.
In step S104, the through-hole is subjected to an acid washing process, including:
s1041: placing the etched glass substrate into an acid pickling solution;
s1042: and starting the second bubbling process to carry out acid washing treatment.
In this embodiment, the acid cleaning process is mainly to completely remove the glass frit residue remaining in the through hole to improve the quality of the through hole.
And repeating the step S103 and the step S104 for multiple times, for example, repeating the step S3-5 times to carry out multi-loop etching and acid washing on the glass substrate, and on the premise of realizing the formation of the through hole, removing the frosting effect on the inner wall of the through hole to ensure that the inner wall is bright, and under the condition of reasonably controlling the etching time, the through hole manufacturing of the glass with the thickness of more than 0.60mm can be met.
Optionally, in another embodiment of the present invention, the bubbling flow rate in the second bubbling flow is 120L/min to 240L/min;
the etching temperature is 25-30 ℃;
the etching rate is 2um/min-3 um/min.
In this embodiment, for example, the bubbling flow rate is 132L/min or 163L/min or 192L/min or 235L/min or the like.
The etching temperature is 26.3 ℃, 28.7 ℃, 29.3 ℃ and the like.
The etching rate is 2.2um/min or 2.3um/min or 2.6um/min or 2.8um/min, etc.
Optionally, in another embodiment of the present invention, the acid cleaning solution is a mixed solution of sulfuric acid and hydrofluoric acid;
wherein, sulfuric acid: hydrofluoric acid 20: 1.
Optionally, based on all the above embodiments of the present invention, in another embodiment of the present invention, an electronic device is further provided, referring to fig. 9, and fig. 9 is a schematic structural diagram of an electronic device provided in an embodiment of the present invention.
The electronic device 14 at least comprises a Mini-LED substrate;
wherein the through hole on the Mini-LED substrate is formed by the forming method of the embodiment.
In this embodiment, the electronic device 14 includes, but is not limited to, electronic devices such as a backlight display, a notebook, a tablet computer, and a television.
The method for forming the Mini-LED substrate through hole and the electronic device provided by the present invention are described in detail above, and a specific example is applied in the text to explain the principle and the implementation of the present invention, and the description of the above embodiment is only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include or include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A method for forming a Mini-LED substrate through hole is characterized by comprising the following steps:
obtaining a glass substrate with a preset thickness and a preset size, wherein the glass substrate comprises a first surface and a second surface which are oppositely arranged;
laser equipment is adopted to laser out a plurality of through hole shapes with preset shapes on a first surface and a second surface of the glass substrate, wherein the through hole shapes on the first surface and the second surface are in one-to-one correspondence;
etching treatment is carried out based on the through hole shape to form a through hole;
and carrying out acid washing treatment on the through hole.
2. The method of forming as claimed in claim 1, wherein said obtaining a glass substrate of a predetermined thickness and a predetermined size comprises:
selecting the large-size glass substrate with the preset thickness;
and cutting the large-size glass substrate to form the glass substrate with the preset thickness and the preset size.
3. The forming method according to claim 1, wherein after the obtaining of the glass substrate of the predetermined thickness and the predetermined size, the forming method further comprises:
and performing edge grinding and chamfering treatment on the glass substrate.
4. The forming method according to claim 1, wherein the performing an etching process to form a via hole based on the via hole profile includes:
placing the glass substrate into an etching groove;
and starting the first bubbling flow to perform etching treatment.
5. The forming method according to claim 4, wherein a flow rate of bubbling in the first bubbling process is 120L/min to 240L/min;
the etching temperature is 25-30 ℃;
the etching rate is 2um/min-3 um/min.
6. The forming method according to claim 1, wherein an etching solution of the etching treatment is a hydrofluoric acid solution.
7. The method of forming as claimed in claim 1, wherein said subjecting said via hole to an acid cleaning process comprises:
placing the etched glass substrate into an acid pickling solution;
and starting the second bubbling process to carry out acid washing treatment.
8. The forming method according to claim 7, wherein a flow rate of bubbling in the second bubbling process is 120L/min to 240L/min;
the etching temperature is 25-30 ℃;
the etching rate is 2um/min-3 um/min.
9. The forming method according to claim 7, wherein the acid cleaning solution is a mixed solution of sulfuric acid and hydrofluoric acid;
wherein, sulfuric acid: 20 parts of hydrofluoric acid: 1.
10. an electronic device, characterized in that the electronic device comprises at least a Mini-LED substrate;
wherein the through hole in the Mini-LED substrate is formed by the forming method of any one of claims 1 to 9.
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| CN202110557577.2A CN113292236A (en) | 2021-05-21 | 2021-05-21 | Mini-LED substrate through hole forming method and electronic equipment |
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| CN202110557577.2A CN113292236A (en) | 2021-05-21 | 2021-05-21 | Mini-LED substrate through hole forming method and electronic equipment |
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| 小克莱德 F. 库姆斯主编: "《印制电路手册》", 31 January 1989, 国防工业出版社 * |
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Application publication date: 20210824 |