CN113277463B - In-situ mechanical testing chip based on network loading structure and preparation method - Google Patents
In-situ mechanical testing chip based on network loading structure and preparation method Download PDFInfo
- Publication number
- CN113277463B CN113277463B CN202110526906.7A CN202110526906A CN113277463B CN 113277463 B CN113277463 B CN 113277463B CN 202110526906 A CN202110526906 A CN 202110526906A CN 113277463 B CN113277463 B CN 113277463B
- Authority
- CN
- China
- Prior art keywords
- diffusion layer
- area
- suspension block
- electrode lead
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012360 testing method Methods 0.000 title claims abstract description 33
- 238000011065 in-situ storage Methods 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 238000009792 diffusion process Methods 0.000 claims abstract description 64
- 239000000725 suspension Substances 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 238000003466 welding Methods 0.000 claims abstract description 15
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000003990 capacitor Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000001259 photo etching Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 238000000708 deep reactive-ion etching Methods 0.000 claims description 2
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract 9
- 239000002346 layers by function Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 30
- 239000000523 sample Substances 0.000 description 14
- 238000007667 floating Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000004458 analytical method Methods 0.000 description 6
- 238000011160 research Methods 0.000 description 6
- 238000012546 transfer Methods 0.000 description 5
- 238000012512 characterization method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000005312 nonlinear dynamic Methods 0.000 description 3
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 239000006250 one-dimensional material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 244000126211 Hericium coralloides Species 0.000 description 1
- 241000764238 Isis Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00158—Diaphragms, membranes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N3/02—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/0058—Kind of property studied
- G01N2203/0069—Fatigue, creep, strain-stress relations or elastic constants
- G01N2203/0071—Creep
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/0058—Kind of property studied
- G01N2203/0069—Fatigue, creep, strain-stress relations or elastic constants
- G01N2203/0073—Fatigue
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/0058—Kind of property studied
- G01N2203/0069—Fatigue, creep, strain-stress relations or elastic constants
- G01N2203/0075—Strain-stress relations or elastic constants
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/02—Details not specific for a particular testing method
- G01N2203/025—Geometry of the test
- G01N2203/0252—Monoaxial, i.e. the forces being applied along a single axis of the specimen
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/02—Details not specific for a particular testing method
- G01N2203/06—Indicating or recording means; Sensing means
- G01N2203/0641—Indicating or recording means; Sensing means using optical, X-ray, ultraviolet, infrared or similar detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/02—Details not specific for a particular testing method
- G01N2203/06—Indicating or recording means; Sensing means
- G01N2203/067—Parameter measured for estimating the property
- G01N2203/0676—Force, weight, load, energy, speed or acceleration
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/02—Details not specific for a particular testing method
- G01N2203/06—Indicating or recording means; Sensing means
- G01N2203/067—Parameter measured for estimating the property
- G01N2203/0682—Spatial dimension, e.g. length, area, angle
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Computer Hardware Design (AREA)
- Investigating Strength Of Materials By Application Of Mechanical Stress (AREA)
- Micromachines (AREA)
Abstract
The invention discloses an in-situ mechanical testing chip based on a grid-loaded structure and a preparation method thereof, wherein a chip functional layer comprises a silicon substrate, a diffusion layer positioned on the upper surface of the silicon substrate, a suspension block and a bearing film which are suspended on the diffusion layer, suspension block anchor points positioned at the periphery of the suspension block, an upper electrode lead wire pressure welding block positioned on the surface of the suspension block anchor points, and a lower electrode lead wire pressure welding block positioned on the diffusion layer; the diffusion layer comprises a diffusion layer lower electrode plate area positioned below the suspension block and the bearing film, a diffusion layer electrode lead area connected with the lower electrode lead pressure welding block, and a conductive channel connecting the diffusion layer lower electrode plate area and the lower electrode lead area; the suspension block and the bearing film suspended on the diffusion layer are used as an upper polar plate area and form a parallel plate capacitor actuator together with a lower polar plate area of the diffusion layer, so that static-dynamic driving of the chip in the thickness direction can be realized, and samples can be placed on the bearing film and mechanical parameter tests of different functions can be realized.
Description
Technical Field
The invention relates to the technical field of micro-electronics and machinery, in particular to an in-situ mechanical testing chip based on a network loading structure and a preparation method thereof.
Background
In the last decades, there has been great interest in the mechanical properties of two-dimensional nanomaterials, which are important fundamental research directions due to their potential for unique and customizable physical properties, including energy harvesting and storage, nanoelectromechanical systems (NEMS), flexible electronics, and stretchable electronics, as well as their special properties from bulk materials. In addition, when the characteristic size of the material is reduced to the micro-nano level, the mechanical property of the material is obviously different from that of a macroscopic material, and the mechanical property of the nano material is closely related to the deformation mechanism of the micro-nano level. Therefore, under the condition that a TEM/SEM electron microscope can be realized, the change of the microstructure of a research material under the sub-angstrom, atomic or nano scale along with static and dynamic mechanical parameters can be observed in situ, and the method has very important significance for improving the reliability of micro-nano electronic devices and promoting the development of related fields.
When the two-dimensional material deforms in the thickness direction, the two-dimensional material shows nonlinear characteristics under the action of the pN magnitude due to the thickness of the atomic scale, but the exact relation between the nonlinear response and the material characteristics is still elusive, so that the two-dimensional material is loaded with force in the thickness direction to move, and the research on the nonlinear dynamic characteristics is an extremely important mechanical field. In addition, compared with a one-dimensional material, the transfer technology of the two-dimensional material to the functional area of the test chip is also a great challenge, so that the structural design of the functional area for testing the device is also very important for the mechanical test chip.
Disclosure of Invention
Technical problems: the technical problems to be solved by the invention are as follows: the in-situ mechanical test chip based on the network-carrying structure is used for researching the relationship between static-dynamic mechanical analysis and nonlinear response under uniaxial tension and material characteristics, reducing the transfer difficulty of a two-dimensional material sample, carrying out nonlinear high-frequency characterization on the mechanical characteristics of the two-dimensional material, realizing the functional research of a nanoscale resonator and improving the practical multifunctional in-situ test chip.
The technical scheme is as follows: in order to solve the technical problems, the invention designs an in-situ mechanical test chip based on a grid structure, which is of an axisymmetric structure and comprises a silicon substrate, a diffusion layer positioned on the upper surface of the silicon substrate, a suspension block and a bearing film which are suspended on the diffusion layer, suspension block anchor points positioned around the suspension block, an upper electrode lead wire pressure welding block positioned on the surface of the suspension block anchor points, and a lower electrode lead wire pressure welding block positioned on the diffusion layer;
the diffusion layer comprises a diffusion layer lower polar plate area positioned below the suspension block and the bearing film, a diffusion layer electrode lead area connected with the lower electrode lead pressure welding block, and a conductive channel connecting the diffusion layer lower polar plate area and the diffusion layer electrode lead area;
the suspension block and the bearing film suspended on the diffusion layer are used as an upper polar plate area and form a parallel plate capacitor actuator together with a lower polar plate area of the diffusion layer; the upper surface of the bearing film is provided with an insulating layer, and a silicon substrate hollowing structure is arranged below the bearing film.
Further, the thickness of the floating block, the bearing film and the floating block anchor point area is the same and is positioned on the same plane, the floating block is of a square structure, the bearing film is positioned at the center of the floating block, the floating block anchor point area is positioned around the floating block, and the floating block anchor point area is fixedly connected with the silicon substrate through the floating block anchor point fixing area.
The beneficial effects are that: compared with the prior art, the invention has the following beneficial effects:
1. the driving structure is a parallel plate capacitor actuator formed by the suspension block and the substrate, and can enable the two-dimensional material to move in the thickness direction of the chip, so that static-dynamic mechanical analysis and nonlinear dynamic characteristic characterization under uniaxial stretching are realized. Different from the conventional in-situ test chip which is generally in a hot V-shaped beam structure or an electrostatic comb tooth structure as a driving structure, the horizontal stretching movement of the sample material is realized.
2. In the existing in-situ test chip technology, the fact that a sample is transferred to a test chip and suspended on a sample table is always a technical difficulty, and unlike the fact that only the end points are fixed in the transfer of one-dimensional materials, the two-dimensional materials can be firmly fixed on the sample table of the test chip only by means of more contact areas. According to the invention, the bearing film is designed on a conventional suspended sample table, so that the bearing film is designed into a concave-angle honeycomb structure to meet the suspension of samples, and on one hand, the contact area of a two-dimensional material on the sample table can be increased, and the difficulty of sample transfer is reduced; on the other hand, each concave angle structure unit in the bearing film is a suspension platform, so that suspension of a sample can be realized, uniaxial stretching of the sample is realized through regulation and control of a concave angle honeycomb structure, and nonlinear dynamic characterization of two-dimensional material mechanical parameters (Young modulus and prestress) is realized; two-dimensional material nano-electromechanical resonance research; static-dynamic mechanical analysis (strain, stress, creep, fatigue characteristics) under uniaxial stretching of two-dimensional materials; reliability and failure analysis of two-dimensional materials.
The method is characterized in that the surface morphology or the atomic fine structure of the two-dimensional material can be analyzed on line by a TEM/SEM (electron microscope/electron microscope) while the mechanical parameters (strain, stress, fatigue characteristics and the like) are tested, so that the microcosmic construction relation rule between the multiparameter of the two-dimensional material and the morphology or the atomic fine structure of the material is obtained.
3. The chip testing environment is not limited to TEM/SEM, but can be used in AFM, raman, laser interferometer and other testing environments.
Drawings
FIG. 1 is a schematic diagram of a test chip according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view showing the structure of a first step of the preparation method according to the embodiment of the present invention;
FIG. 3 is a structural cross-sectional view showing a second step of the production method in the embodiment of the present invention;
FIG. 4 is a structural cross-sectional view of a third step of the production method in the embodiment of the present invention;
FIG. 5 is a structural cross-sectional view of a fourth step of the production method in the embodiment of the present invention;
FIG. 6 is a structural cross-sectional view showing a fifth step of the production method in the embodiment of the present invention;
FIG. 7 is a structural cross-sectional view showing a sixth step of the production method in the embodiment of the present invention;
FIG. 8 is a structural cross-sectional view of a seventh step of the production method in the embodiment of the present invention;
FIG. 9 is a structural cross-sectional view of an eighth step of the production method in the embodiment of the present invention;
FIG. 10 is a structural cross-sectional view of a ninth step of the production method in the embodiment of the present invention;
FIG. 11 is a structural cross-sectional view showing a tenth step of the production method in the embodiment of the present invention;
FIG. 12 is a structural cross-sectional view of an eleventh step of the production method in the embodiment of the present invention;
FIG. 13 is a block diagram of a diffusion layer of the present invention;
FIG. 14 is a schematic diagram of a mechanical theoretical model of a reentrant structural unit;
FIG. 15 is a schematic diagram of a theoretical analysis of stress mechanics for a quarter-turn corner structure unit.
In the figure: 1. a silicon substrate; 2. a diffusion layer; 21. a diffusion layer lower plate region; 22. a diffusion layer electrode lead region; 23. a conductive path; 3. a sacrificial layer; 4. a floating block anchor fixing area; 5. a structural layer; 51. a floating block anchor point area; 52. a suspension block; 53. a carrier film; 6. an insulating layer; 72. an upper electrode lead press-welding block; 71. a lower electrode lead press-welding block; 8. and (5) a substrate hollowing structure.
Detailed Description
The technical scheme of the invention is described in detail below with reference to the accompanying drawings.
As shown in fig. 1, the embodiment of the invention provides an in-situ mechanical test chip based on a network-carrying structure, which is in an axisymmetric structure, and comprises a silicon substrate 1, a diffusion layer 2 positioned on the upper surface of the silicon substrate 1, a suspension block 52 and a bearing film 53 which are suspended on the diffusion layer 2, a suspension block anchor point area 51 positioned around the suspension block 52, an upper electrode lead wire bonding block 72 positioned on the surface of the suspension block anchor point area 51, and a lower electrode lead wire bonding block 71 positioned on the diffusion layer 2.
As shown in fig. 13, the diffusion layer 2 includes a diffusion layer lower plate region 21 located under the suspension block 52 and the carrier film 53, a diffusion layer electrode lead region 22 connected to the lower electrode lead pad 71, and a conductive path 23 connecting the diffusion layer lower plate region 21 and the diffusion layer electrode lead region 22. The conductive channels 23 lie on an axis of symmetry about which the diffusion layer 2 is symmetrical.
The suspension block 52 and the carrier film 53 suspended on the diffusion layer 2 serve as upper electrode plate areas and form a parallel plate capacitor actuator together with the diffusion layer lower electrode plate area 21. After a voltage is applied between the upper electrode lead bonding block 72 and the lower electrode lead bonding block 71, loading of the electrical signal of the test chip can be achieved, the lower electrode lead bonding block 71 charges the diffusion layer electrode lead region 22 through the conductive channel 23, the upper electrode lead bonding block 72 charges the suspension block 52 and the carrier film 53 through the suspension block anchor point region 51, and the carrier film 53 is displaced in the thickness direction.
The thickness of the suspension block 52, the thickness of the bearing film 53 and the thickness of the suspension block anchor point area 51 are the same and are positioned on the same plane, the suspension block 52 is of a square structure, the bearing film 53 is positioned at the central position of the bearing film 53, the suspension block anchor point area 51 is positioned around the suspension block 52, and the suspension block anchor point area 51 is fixedly connected with the silicon substrate 1 below through the suspension block anchor point fixing area 4.
The carrier film 53 is a reentrant honeycomb structure, and includes a plurality of repeated reentrant structural units, and the poisson ratio of the carrier film 53 can be regulated and controlled by designing the size of the reentrant structural units, so that the width direction of the carrier film 53 is widened, narrowed or unchanged when the carrier film 53 is tensile strained in the length direction.
The principle by which the carrier film 53 can be uniaxially stretched is as follows:
as shown in fig. 14, the reentrant structural units can be described using parameters of a cross bar length w, a diagonal bar length l, an angle θ between the diagonal bar and a longitudinal vertical line, and a structural thickness t. The structure is stretched in the x-direction and given that all joints in the structure are rigid, the deformation of the structure is mainly due to bending of the female support bars and longitudinal stretching of the transverse horizontal bars, irrespective of the torsion effect.
Because of the high symmetry of the reentrant structural units, the reentrant structural units can be further reduced to the quarter-structure shown in FIG. 15 for mechanical analysis. In the figure, the stretching of the diagonal rods OA is OA', the length is l, and the rotation angle isIs available in the form of
Wherein AA' is the displacement of the diagonal rod after being stretched, deltax is the displacement of the diagonal rod in the x direction, and Deltay is the displacement of the diagonal rod in the y direction.
The projections of AB, OA, OC in the x-direction are w/2, lsin (θ), respectively, and therefore the effective length in the x-direction is w-lsin (θ) and the effective length in the y-direction is lcos (θ).
Thus the longitudinal strain ε can be calculated x And transverse strain ε y
In the Timoshenko model, the deflection induced reduction in diagonal rod length is negligible given that the deflection angle is small enough. The simplified expression determining poisson's ratio under x-direction stretching is
As can be seen from the formula (6), the Poisson's ratio of the reentrant structural unit is mainly controlled by the length w of the cross rod, the length l of the diagonal rod, and the included angle θ between the diagonal rod and the longitudinal vertical line, and different Poisson's ratios can be obtained by selecting different structural dimensions. In particular, when w=lsin (θ), poisson's ratio is 0, that is, when stretching in the longitudinal direction, the width is not changed, and uniaxial stretching is achieved.
The carrier film 53 is covered with a silicon dioxide insulating layer 6 and has a substrate hollowed-out structure 8 thereunder for TEM observation. The substrate hollowed-out structure 8 is a circular hole with a diameter of about 10 μm and is uniformly distributed under the carrier film 53, and the number of the holes is about 10-50.
The test chip of the present invention has a size of about 5 x 3mm, wherein the suspension 52 has an overall area of about 10mm 2 The carrier film 53 has an area of about 0.5-2mm 2 The thickness of the silicon dioxide insulating layer 6 is 100-500nm, the thickness of the structural layer 5 is 1-3 μm, the minimum unit side length of the reentrant repeating units in the carrier film 53 is about 2-3 μm, and the minimum unit area is about 10 μm 2 。
The specific using method comprises the following steps: the electrode lead pressure welding block is connected to an external test circuit by using a pressure welding technology, a sample of the two-dimensional material to be tested is dripped on the bearing film 53 by using a liquid-transferring gun, so that the sample to be tested is uniformly distributed, and the sample to be tested can be transferred by using a transfer technology such as a FIB (FIB) and the like. By applying direct current or alternating current load with a certain frequency on the upper electrode and the lower electrode, nonlinear static or dynamic high-frequency characterization test of a sample to be tested can be realized, mechanical parameters such as Young modulus, pretension and the like of a two-dimensional material and fatigue characteristic test can be obtained, and nano-electromechanical resonance research of the two-dimensional material can be performed. Meanwhile, the in-situ TEM/SEM uniaxial tensile test of the two-dimensional material can be realized by applying high-voltage load to the upper electrode and the lower electrode, so that the mechanical parameters such as strain, stress and the like of the two-dimensional material can be obtained. The chip is also suitable for AFM, raman and other test equipment.
The preparation method of the test chip with the structure comprises the following steps:
step 1, as shown in fig. 2, a diffusion layer 2 is formed on a silicon substrate 1 by adopting a photoetching and diffusion doping process, and the doping material is boron or phosphorus, wherein the diffusion layer 2 comprises a diffusion layer lower electrode plate area 21, a diffusion layer electrode lead area 22 and a conductive channel 23 for connecting the diffusion layer lower electrode plate area 21 and the diffusion layer electrode lead area 22;
step 2, as shown in FIG. 3, a sacrificial layer 3 with the thickness of 0.5-2 μm is deposited on a silicon substrate 1 by a CVD process, wherein the sacrificial layer 3 is SiO 2 A material;
step 3, as shown in fig. 4, etching the sacrificial layer 3 by adopting a photoetching and reactive ion etching process to form a suspension block anchor fixing area 4;
step 4, as shown in fig. 5, then depositing a silicon nitride layer of 1-2 μm by CVD and patterning, and filling the floating block anchor fixing area 4;
step 5, as shown in FIG. 6, CVD depositing a layer of polysilicon 0.5-2 μm thick as a structural layer 5 on the sacrificial layer 3;
step 6, as shown in fig. 7, growing 100-500nm silicon dioxide on the structural layer 5 to form an insulating layer 6;
step 7, as shown in fig. 8, patterning the silicon dioxide insulating layer 6 by adopting a photoetching and reactive ion etching process;
step 8, as shown in fig. 9, patterning the structural layer 5 by photolithography and reactive ion etching processes to form a structural pattern of the carrier film 53, and etching to remove the structural layer 5 above the electrode lead area 22 of the diffusion layer;
step 9, as shown in fig. 10, etching the sacrificial layer 3;
step 10, as shown in fig. 11, preparing an upper electrode lead bonding block 72 of Ti/Au with the thickness of 50/250nm on the structural layer 5 and a lower electrode lead bonding block 71 of Ti/Au with the thickness of 50/250nm on the electrode lead area 22 of the diffusion layer by adopting photoetching and electron beam evaporation processes;
step 11, as shown in fig. 12, a photolithography and deep reactive ion etching process is adopted to etch through the silicon substrate 1 below the TEM observation area to form a substrate hollowed-out structure 8, so as to complete the preparation of the mechanical test chip with polysilicon as the structural layer 5.
The foregoing has shown and described the basic principles, principal features and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the specific embodiments described above, and that the above specific embodiments and descriptions are provided for further illustration of the principles of the present invention, and that various changes and modifications may be made therein without departing from the spirit and scope of the invention as defined in the appended claims. The scope of the invention is defined by the claims and their equivalents.
Claims (5)
1. The in-situ mechanical test chip based on the network loading structure is characterized by being of an axisymmetric structure and comprising a silicon substrate, a diffusion layer, a suspension block and a bearing film, wherein the diffusion layer is arranged on the upper surface of the silicon substrate, the suspension block and the bearing film are suspended on the diffusion layer, the suspension block anchor point area is arranged on the periphery of the suspension block, an upper electrode lead press-welding block is arranged on the surface of the suspension block anchor point area, and a lower electrode lead press-welding block is arranged on the diffusion layer;
the diffusion layer comprises a diffusion layer lower polar plate area positioned below the suspension block and the bearing film, a diffusion layer electrode lead area connected with the lower electrode lead pressure welding block, and a conductive channel connecting the diffusion layer lower polar plate area and the diffusion layer electrode lead area;
the suspension block and the bearing film suspended on the diffusion layer are used as an upper polar plate area and form a parallel plate capacitor actuator together with a lower polar plate area of the diffusion layer;
the upper surface of the bearing film is provided with an insulating layer.
2. The in-situ mechanical testing chip based on the network carrying structure according to claim 1, wherein the thickness of the suspension block, the thickness of the bearing film and the thickness of the anchor point area of the suspension block are the same and are positioned on the same plane, the suspension block is of a square structure, the bearing film is positioned at the center of the suspension block, the anchor point area of the suspension block is positioned around the suspension block, and the anchor point area of the suspension block is fixedly connected with the silicon substrate through the anchor point fixing area of the suspension block.
3. The in-situ mechanical testing chip based on a carrier web structure of claim 1, wherein the carrier film is a reentrant honeycomb structure.
4. The in-situ mechanical testing chip based on the carrier web structure of claim 1, wherein a silicon substrate hollowed-out structure is arranged below the carrier film.
5. A method for preparing an in-situ mechanical test chip based on a network-supported structure as claimed in any one of claims 1-4, comprising the steps of:
step 1, forming a diffusion layer on a silicon substrate by adopting photoetching and diffusion doping processes, wherein the diffusion layer comprises a diffusion layer lower electrode plate area, a diffusion layer electrode lead area and a conductive channel for connecting the diffusion layer lower electrode plate area and the diffusion layer electrode lead area;
step 2, depositing a sacrificial layer on the silicon substrate by a CVD process;
step 3, etching the sacrificial layer by adopting a photoetching and reactive ion etching process to form a suspension block anchor fixing area;
step 4, then CVD deposits a silicon nitride layer of 1-2 mu m and patterns, fills the anchor fixing area of the suspension block;
step 5, CVD deposits a layer of polysilicon with the thickness of 0.5-2 mu m on the sacrificial layer as a structural layer;
step 6, growing 100-500nm silicon dioxide on the structural layer to form an insulating layer;
step 7, patterning the insulating layer by adopting a photoetching and reactive ion etching process;
step 8, patterning the structural layer by adopting photoetching and reactive ion etching processes to form a bearing film structural pattern, and etching to remove the structural layer above the electrode lead area of the diffusion layer;
step 9, corroding the sacrificial layer;
step 10, preparing an upper electrode lead wire pressure welding block on the structural layer and a lower electrode lead wire pressure welding block on the electrode lead wire area of the diffusion layer by adopting photoetching and electron beam evaporation processes;
and 11, etching through the silicon substrate below the TEM observation area by adopting photoetching and deep reactive ion etching processes to form a substrate hollowed-out structure, and completing the preparation of the mechanical test chip taking the polysilicon as a structural layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110526906.7A CN113277463B (en) | 2021-05-14 | 2021-05-14 | In-situ mechanical testing chip based on network loading structure and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110526906.7A CN113277463B (en) | 2021-05-14 | 2021-05-14 | In-situ mechanical testing chip based on network loading structure and preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113277463A CN113277463A (en) | 2021-08-20 |
| CN113277463B true CN113277463B (en) | 2024-03-12 |
Family
ID=77279046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110526906.7A Active CN113277463B (en) | 2021-05-14 | 2021-05-14 | In-situ mechanical testing chip based on network loading structure and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113277463B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102374948A (en) * | 2011-09-21 | 2012-03-14 | 华东师范大学 | Duplex measurement method for non-silicon film mechanical property of microelectronic mechanical system |
| KR101374276B1 (en) * | 2012-11-12 | 2014-03-12 | 동명대학교산학협력단 | Apparatus for test specimen's tensile and fatigue testing in-situ within sem |
| CN210665355U (en) * | 2019-08-26 | 2020-06-02 | 吉林大学 | Precision actuation/perception dual-mode integrated micro-mechanical comb tooth structure |
| CN111366451A (en) * | 2018-12-26 | 2020-07-03 | 中国科学院上海微***与信息技术研究所 | In-situ characterization device and method for dynamically and mechanically loading nano material |
| CN112113988A (en) * | 2019-06-19 | 2020-12-22 | 中国科学院金属研究所 | Electron microscope in-situ mechanical property testing chip and manufacturing method thereof |
-
2021
- 2021-05-14 CN CN202110526906.7A patent/CN113277463B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102374948A (en) * | 2011-09-21 | 2012-03-14 | 华东师范大学 | Duplex measurement method for non-silicon film mechanical property of microelectronic mechanical system |
| KR101374276B1 (en) * | 2012-11-12 | 2014-03-12 | 동명대학교산학협력단 | Apparatus for test specimen's tensile and fatigue testing in-situ within sem |
| CN111366451A (en) * | 2018-12-26 | 2020-07-03 | 中国科学院上海微***与信息技术研究所 | In-situ characterization device and method for dynamically and mechanically loading nano material |
| CN112113988A (en) * | 2019-06-19 | 2020-12-22 | 中国科学院金属研究所 | Electron microscope in-situ mechanical property testing chip and manufacturing method thereof |
| CN210665355U (en) * | 2019-08-26 | 2020-06-02 | 吉林大学 | Precision actuation/perception dual-mode integrated micro-mechanical comb tooth structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113277463A (en) | 2021-08-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Zhang et al. | In situ electron microscopy mechanical testing of silicon nanowires using electrostatically actuated tensile stages | |
| Hosseinian et al. | Quantitative in situ TEM tensile fatigue testing on nanocrystalline metallic ultrathin films | |
| Sharpe | Murray lecture tensile testing at the micrometer scale: Opportunities in experimental mechanics | |
| JP2009526972A (en) | Micromachines and nanomachines for testing the physical properties of micro- and nano-sized material samples that actuate internal stresses | |
| US9382108B2 (en) | Nanowire sensor device | |
| Jibril et al. | Single-Nanowire strain sensors fabricated by nanoskiving | |
| US20110163061A1 (en) | Method Of Producing Microsprings Having Nanowire Tip Structures | |
| CN113277463B (en) | In-situ mechanical testing chip based on network loading structure and preparation method | |
| Yi et al. | Ultralow flexural properties of copper microhelices fabricated via electrodeposition-based three-dimensional direct-writing technology | |
| Yang et al. | In situ TEM mechanical characterization of one-dimensional nanostructures via a standard double-tilt holder compatible MEMS device | |
| CN113218982B (en) | In-situ mechanical test chip and preparation method thereof | |
| CN113237733B (en) | In-situ force thermoelectric multi-field coupling test chip and preparation method thereof | |
| CN110407154B (en) | MEMS micro actuator, in-situ uniaxial tension device and manufacturing method thereof | |
| CN113203758B (en) | In-situ multi-parameter test chip structure for TEM/SEM (transmission electron microscope) and preparation method | |
| Chuang et al. | Nano-scale fatigue study of LPCVD silicon nitride thin films using a mechanical-amplifier actuator | |
| Zhang et al. | Development of energy harvesting MEMS vibration device sensor with wideband response function in low-frequency domain | |
| CN114295662B (en) | In-situ MEMS deformed net-carrying chip structure and preparation method thereof | |
| Huang et al. | An integrated MEMS device for in-situ four-probe electro-mechanical characterization of PT nanobeam | |
| Agrawal et al. | The evolving role of experimental mechanics in 1-D nanostructure-based device development | |
| CN113237755B (en) | Two-dimensional material in-situ mechanical parameter testing chip structure and preparation method | |
| Wang et al. | In situ TEM/SEM electronic/mechanical characterization of nano material with MEMS chip | |
| Huang et al. | Real-time Quantitative Electro-mechanical Characterization of Nanomaterials Based on Integrated MEMS Device | |
| CN113237734B (en) | High-precision in-situ mechanical test chip and preparation method thereof | |
| Zhang | A nano-tensile testing system for studying nanostructures inside an electron microscope: design, characterization and application | |
| Huang et al. | A dual-drive mode MEMS device for in-situ static/dynamic electro-mechanical characterization of nanomaterials |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |