CN113237755B - Two-dimensional material in-situ mechanical parameter testing chip structure and preparation method - Google Patents
Two-dimensional material in-situ mechanical parameter testing chip structure and preparation method Download PDFInfo
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Abstract
The invention discloses a two-dimensional material in-situ mechanical parameter testing chip structure and a preparation method thereof, wherein the chip comprises an electrostatic actuator, a hollow sample table and a fixed block; the electrostatic actuator comprises a mass block, the electrostatic actuator is arranged in an axisymmetric mode relative to the mass block, the mass block is a symmetry axis of the electrostatic actuator, one end of a hollowed sample table is connected with the mass block, the other end of the hollowed sample table is connected with a fixed block, a connecting end of the sample table and the mass block moves along the symmetry axis along with the electrostatic actuator, and a connecting end of the hollowed sample table, which is connected with the fixed block, is kept still. The device is driven in a single-shaft and two-way mode, and static-dynamic mechanical tests in a stretching and compressing composite mode can be performed. The hollow sample platform is a bearing beam based on the reentrant angle honeycomb structure, the bearing area of a sample carried by the hollow sample platform is effectively increased, the transfer difficulty of the sample is reduced, and the sample is stretched or compressed.
Description
Technical Field
The invention relates to an in-situ mechanical testing chip for a TEM/SEM, in particular to a two-dimensional material in-situ mechanical parameter testing chip structure and a preparation method thereof.
Background
Over the past decades, there has been great interest in the mechanical and mechanical properties of two-dimensional nanomaterials, graphene oxide, molybdenum disulfide and other two-dimensional materials are important fundamental research directions due to their unique properties that are distinct from bulk materials and the potential to possess unique and customizable physical properties, including various nanotechnological applications including energy harvesting and storage, nanoelectromechanical systems (NEMS), flexible electronics and stretchable electronics. In addition, when the characteristic size of the material is reduced to the micro-nano level, the mechanical property of the material is obviously different from that of a macroscopic body material, and the mechanical property of the nano material is closely related to a deformation mechanism of the micro-nano scale. Therefore, the development of the method can realize in-situ observation of the microstructure of a research material under a TEM/SEM (transmission electron microscope) and a sub-angstrom, atom or nano scale along with the change of static and dynamic mechanical parameters, and has very important significance for improving the reliability of a micro-nano electronic device and promoting the development of related fields.
The mechanical properties under multiple static and dynamic stress loads are closely related to the formation and evolution of the internal substructure of the material, but at present, related research contents mainly aim at one-dimensional materials, and are established in the aspect of independent testing of the static and dynamic loads under a single stretching or compressing mode, so that the mechanical properties under the multiple stress loads under a composite stretching and compressing mode cannot be comprehensively understood. Therefore, the testing technology of multiple stress load loading and high frequency dynamic loading under the in-situ tension/compression composite mode of the transmission electron microscope is rarely reported at present. In addition, the transfer technique of two-dimensional materials to the sample stage of the test chip is also a great challenge compared to one-dimensional materials, and thus the structural design of the sample stage is very important for in-situ mechanical test of the chip.
The existing commercial sample rod on the market is a PI type nano indentor of Hysitron company, and can realize the uniaxial tension or compression and mechanical property test of nano materials, but the experimental instrument is expensive, needs to customize a specific experimental environment and cannot realize the tension and compression composite mode test.
A mechanical testing chip based on a piezoelectric driver is developed by a subject group of the Korean-east professor of Beijing university of industry, the chip can realize in-situ mechanical uniaxial tension or compression of nano materials, but the chip needs an external driving device and more complicated related matched equipment, a specific TEM sample rod needs to be customized, and mechanical testing in a tension and compression composite mode cannot be carried out.
The structure of the alignment type in-situ characterization chip developed by Shanghai microsystem of Chinese academy of sciences and the subject group of the Wangshenglin researchers at the institute of information technology reduces the possibility of pollution and damage when preparing and transferring samples to the characterization chip, but the sample stage is small in size and difficult to reduce the complexity in the sample transfer process.
Therefore, the development of an in-situ testing chip device capable of statically-dynamically testing the mechanical properties of a two-dimensional material in an in-situ stretching and compressing composite mode, reducing the transfer difficulty of a two-dimensional material sample, and improving the practicability is still one of the problems to be solved in the field.
Disclosure of Invention
The technical problem is as follows: the technical problem to be solved by the invention is as follows: the chip for testing the in-situ mechanical parameters of the two-dimensional material is provided, and the technical difficulty that a sample table is difficult to transfer the two-dimensional material in the existing report is reduced. Meanwhile, a standard micromachining process preparation method for large-scale batch production of the test chip is provided.
The technical scheme is as follows: in order to solve the technical problem, the invention provides a two-dimensional material in-situ mechanical parameter testing chip structure, which comprises an electrostatic actuator, a hollow sample table and a fixed block, wherein the hollow sample table is arranged on the electrostatic actuator; the electrostatic actuator comprises a mass block, the electrostatic actuator is arranged in an axisymmetric mode relative to the mass block, the mass block is a symmetry axis of the electrostatic actuator, one end of a hollowed sample table is connected with the mass block, the other end of the hollowed sample table is connected with a fixed block, a connecting end of the sample table and the mass block moves along the symmetry axis along with the electrostatic actuator, and a connecting end of the hollowed sample table, which is connected with the fixed block, is kept still.
Furthermore, the two-dimensional material in-situ mechanical parameter testing chip structure further comprises a silicon substrate, wherein the silicon substrate is used for bearing the electrostatic actuator and the fixed block, a supporting beam anchor point and a fixed comb tooth supporting beam anchor point of the electrostatic actuator are connected with the silicon substrate, and a substrate hollowed structure is arranged below the electrostatic actuator and the hollowed sample platform;
has the advantages that: compared with the prior art, the invention has the following beneficial effects: firstly, the chip hollowed-out sample platform is a bearing beam based on a concave angle honeycomb structure, so that a two-dimensional material sample is not required to be carried on the sample platform at two completely suspended ends, but the sample is carried on the bearing beam of the sample platform, the bearing area of the sample platform for carrying the sample is effectively increased, the technical difficulty that the sample platform is difficult to transfer the two-dimensional material in the existing report is reduced, and meanwhile, the sample platform is based on the concave angle honeycomb structure, so that the relatively large area proportion of the sample can be ensured to still keep a suspended state;
secondly, uniaxial tension or compression (the Poisson ratio of the bearing beam is 0) of the sample can be realized by regulating and controlling the size of the bearing beam with the concave angle honeycomb structure, so that the test chip can realize regular analysis of static-dynamic mechanical parameters of the two-dimensional material under uniaxial tension or compression deformation;
thirdly, the chip mechanics loading function is completed by a stretching actuator and a compressing actuator, the directions of the first movable comb teeth and the second movable comb teeth on the movable comb teeth supporting beam are opposite, so that two motion modes of stretching and compressing a sample can be realized, and the loading mode can realize planar stretching and compression (static and dynamic) loading of a two-dimensional material; and analyzing the coupling relation rule between creep and fatigue characteristics and mechanical parameters (Young modulus, stress, buckling and the like) in a composite mode; analyzing the reliability and failure of the two-dimensional material; meanwhile, when the excitation given to the actuator is large enough, the sliding of the sample on the bearing beam can be realized, and the micro-mechanism research on the surface/interface friction characteristics of the two-dimensional material and the contact surface is carried out;
fourthly, if the test is a single tensile or compressive mechanical test, one of the electrostatic tensile executing structure or the compressive executing structure can be used as a capacitance sensor according to requirements, so that the automatic detection of the strain displacement of the sample to be detected is realized.
Drawings
FIG. 1 is a diagram illustrating a test chip according to an embodiment of the present invention;
FIG. 2 is a structural sectional view of a first step in the production method of the present invention;
FIG. 3 is a structural sectional view of the second step in the production method of the present invention;
FIG. 4 is a sectional view of the structure of the third step in the production process of the present invention;
FIG. 5 is a sectional view showing the structure of the fourth step in the production process of the present invention;
FIG. 6 is a structural sectional view of the fifth step in the production process of the present invention;
FIG. 7 is a schematic view of a hollow sample stage according to the present invention;
FIG. 8 is a schematic diagram of a mechanical theory model of a reentrant angular structure;
FIG. 9 is a schematic diagram of a theoretical analysis of a quarter-reentrant structure under force.
In the figure: 1. a silicon substrate; 2. an oxygen burying layer; 3. a silicon device layer; 4. a back side protective layer; 5. pressing and welding the electrode lead; 6. an undercut structure;
301. a mass block; 302. a support beam; 303. a first movable comb support beam; 304. a first movable comb; 305. hollowing out a sample table; 306. a fixed block; 307. a first fixed comb support beam; 308. a second fixed comb support beam; 309. a first fixed comb; 310. supporting beam anchor points; 311. fixing comb support beam anchor points; 312. a second movable comb support beam; 313. a second movable comb; 314. a third fixed comb support beam; 315. a fourth fixed comb support beam; 316. and the second fixed comb teeth.
Detailed Description
The technical solution of the present invention will be described in detail below with reference to the accompanying drawings.
As shown in fig. 1, a two-dimensional material in-situ mechanical parameter testing chip structure includes an electrostatic actuator, a hollow sample stage 305 and a fixed block 306;
the electrostatic actuator comprises a mass block 301, the electrostatic actuator is arranged in an axisymmetric manner relative to the mass block 301, the mass block 301 is a symmetric axis of the electrostatic actuator, one end of the hollow sample table 305 is connected with the mass block 301, the other end of the hollow sample table 305 is connected with the fixed block 306, and the mass block 301 has the same width as the hollow sample table 305 and the fixed block 306; the connecting end of the hollow sample table 305 and the mass block 301 moves along the symmetry axis along with the electrostatic actuator, and the connecting end of the hollow sample table 305 and the fixed block 306 is kept stationary.
As shown in fig. 7, the hollow sample stage 305 is a concave-angle honeycomb-structure carrier beam, and includes a plurality of concave-angle-structure repeating units, and the poisson ratio of the carrier beam can be adjusted and controlled by designing the size of the concave-angle structure, so that the carrier beam is widened, narrowed or unchanged in the width direction when the carrier beam is subjected to tensile/compressive strain in the length direction; when the load-bearing beam is subjected to tensile/compressive strain in the length direction and has unchanged width, the sample material on the load-bearing beam is also subjected to tensile or compressive strain, the width is unchanged, and uniaxial deformation is realized.
The principle that the load beam can realize uniaxial deformation is as follows:
as shown in FIG. 8, the reentrant structures can be described using the parameters of crossbar length w, diagonal length l, angle θ between diagonal and vertical, and structure thickness t. The structure is stretched in the x-direction, and given that all the connections in the structure are rigid, the deformation of the structure is mainly due to the bending of the concave supporting bars and the longitudinal stretching of the transverse horizontal bars, without taking into account the twisting action.
Due to the high symmetry of the structure, the reentrant structures can be further simplified to quarter structures as shown in fig. 9 for mechanical analysis. In FIG. 9, the OA's are obtained after stretching the diagonal bars, the lengths are l, and the rotation angle is
Can obtain the product
Where AA' is the displacement of the diagonal after being stretched, Δ x is the displacement of the diagonal in the x-direction, and Δ y is the displacement of the diagonal in the y-direction.
The projections of AB, OA and OC in the x direction are w/2, lsin (theta) and w/2 respectively, so that the effective length in the x direction is w-lsin (theta) and the effective length in the y direction is lcos (theta).
Thus the longitudinal strain ε can be calculatedxAnd transverse strain εy
In the Timoshenko model, the reduction in length of the sway bar caused by deflection is negligible, assuming that the deflection angle is sufficiently small. A simplified expression for determining Poisson's ratio under x-direction stretch is
As can be seen from the formula (6), the Poisson ratio of the reentrant structure is mainly regulated by the length w of the transverse rod, the length l of the oblique rod and the included angle theta between the oblique rod and the longitudinal vertical line, and different Poisson ratios can be obtained by selecting different structure sizes. In particular, when w is lsin (θ), the poisson's ratio is 0, that is, when the reentrant structure is deformed in the longitudinal direction, the width is not changed.
The hollow sample stage 305 (concave angle honeycomb structure bearing beam) can be designed to have the length and width of about 10 mu m in theory, considering the space of an SEM/TEM operation chamber and the size of a material sample, and the minimum unit side length of the concave angle structure is about 2-3 mu m, and the minimum unit area is about 10 mu m2。
The electrostatic actuator further includes a support beam 302, a tension actuator structure, and support beam anchors at both ends of the support beam 302.
The stretching execution structure comprises a first movable comb support beam 303, a first movable comb 304 vertically connected with the first movable comb support beam 303, a first fixed comb support beam 307, a second fixed comb support beam 308, first fixed combs 309 vertically connected with the first fixed comb support beam 307 and the second fixed comb support beam 308, and fixed comb support beam anchor points 311 located at one ends of the first fixed comb support beam 307 and the second fixed comb support beam 308 far away from the mass block 301.
The supporting beam 302 and the first movable comb supporting beam 303 are both vertically connected with the mass block 301; the first fixed comb tooth 309 and the first movable comb tooth 304 are arranged in a crossed manner; the first fixed comb teeth 309 are the same number as the first movable comb teeth 304.
The support beam 302, the first movable comb 304, the first movable comb support beam 303, the first fixed comb 309, the fixed comb support beam anchor point 311, and the support beam anchor point are all symmetrically arranged with respect to the mass block 301.
The first fixed comb support beam 307 and the second fixed comb support beam 308 are disposed axially symmetrically with respect to the mass block 301.
The stretching execution structure is used for stretching the hollow sample table 305 by the electrostatic actuator; the stretching performing structure may be plural.
The electrostatic actuator further includes a compression executing structure including a second movable comb-tooth support beam 312, a second movable comb-tooth 313 vertically connected to the second movable comb-tooth support beam 312, a third fixed comb-tooth support beam 314, a fourth fixed comb-tooth support beam 315, and second fixed comb-teeth 316 vertically connected to the third fixed comb-tooth support beam 314 and the fourth fixed comb-tooth support beam 315, respectively; the ends of the third fixed-comb support beam 314 and the fourth fixed-comb support beam 315 away from the mass block 301 are connected to the fixed-comb support beam anchor points 311.
The second movable comb support beam 312 is vertically connected with the mass block 301 and is symmetrical with respect to the mass block 301; the third fixed comb support beam 314 and the fourth fixed comb support beam 315 are symmetrical with respect to the mass block 301; the second movable comb teeth 313 and the second fixed comb teeth 316 are arranged in a crossed manner, and the number of the second movable comb teeth 313 and the number of the second fixed comb teeth 316 are the same.
The first movable comb-teeth support beam 303 and the second movable comb-teeth support beam 312 are disposed back to back, that is, the first movable comb-teeth 304 on the first movable comb-teeth support beam 303 and the second movable comb-teeth 313 on the second movable comb-teeth support beam 312 are disposed in opposite directions.
The compression executing structure is used for realizing the compression of the hollowed-out sample table 305 by the electrostatic actuator. The compression execution structure may be plural.
The number of the support beams 302 is two, and the compression executing structure and the tension executing structure are both arranged between the two support beams 302.
Electrode lead pressure welding blocks 5 are arranged on the support beam anchor points 310 and the fixed comb tooth support beam anchor points 311 and are used for leading out signals of the test chip.
The two-dimensional material in-situ mechanical parameter testing chip structure further comprises a silicon substrate 1, wherein the silicon substrate 1 is used for bearing an electrostatic actuator and a fixed block 306, a support beam anchor point 310 and a fixed comb tooth support beam anchor point 311 of the electrostatic actuator are connected with the silicon substrate 1, and a substrate hollowed-out structure is arranged below the electrostatic actuator and a hollowed-out sample platform 305;
the specific use method comprises the following steps: the electrode lead bonding block is connected to an external test circuit by using a bonding technology, and a two-dimensional material sample to be tested is transferred to the hollow sample table 305 by using a transfer technology such as FIB (focused ion beam) and the like so as to cover the hollow sample table 305. The testing voltage pulse is applied to the first movable comb teeth 304, the first fixed comb teeth 309, the second movable comb teeth 313 and the second fixed comb teeth 316 through the electrode lead press-welding block 5 under the control of a digital circuit or an analog circuit, the high-frequency dynamic uniaxial tensile test in the tensile, compression and composite modes is carried out, the microstructure of a sample is observed in situ, and the stress borne by the two-dimensional material can be obtained through the Hooke's law, the composite beam rigidity theory and the driving force formula of an electrostatic actuator. The stress borne by the two-dimensional material is sigma, namely F/A, wherein F is the stress borne by the sample, A is the cross section area of the sample to be detected, and the strain of the sample to be detected can be observed through an in-situ electron microscope, so that the mechanical properties of the material of the sample to be detected, such as Young modulus, breaking strength, fatigue, buckling, yield, friction and the like, can be obtained. If the related test is performed in a small TEM space, the number of the first movable comb tooth 304 and the first fixed comb tooth 309 or the number of the second movable comb tooth 313 and the third fixed comb tooth 314 may be designed according to specific requirements. If the related test is carried out in a larger space of the SEM, the number of the comb teeth can be properly increased, and one of the electrostatic stretching executing structure or the electrostatic compressing executing structure can be used as a capacitance sensor according to the requirement, so that the automatic detection of the strain displacement of the sample to be detected is realized.
The preparation method of the test chip with the structure comprises the following steps:
the first step is as follows: as shown in FIG. 2, 100-200nm silicon nitride is grown on the lower surface of the SOI wafer to form a backside protection layer 4; the SOI wafer sequentially comprises a silicon device layer 3, a buried oxide layer 2 and a silicon substrate 1 from top to bottom, and a back surface protection layer 4 is positioned on the surface of the silicon substrate 1;
the second step is that: as shown in fig. 3, preparing 50/250nm Ti/Au serving as electrode lead bonding pads 5 on a silicon device layer by adopting photoetching and electron beam evaporation processes;
the third step: as shown in fig. 4, an electrostatic actuator, a hollow sample stage 305 and a fixed block 306 are prepared on a silicon device layer 3 by using photolithography and reactive ion etching processes; the width of a mass block 301 in the electrostatic actuator is the same as that of a hollow sample table 305 and a fixed block 306;
the fourth step: as shown in fig. 5, the back protection layer 4 below the hollowed-out sample stage 305 and below the electrostatic actuator except the anchor point region is etched by using photolithography and reactive ion etching processes; the anchor point areas are a support beam anchor point 310 and a fixed comb support beam anchor point 311;
the fifth step: as shown in fig. 6, the silicon substrate 1 and the buried oxide layer 2 under the hollowed-out sample stage 305 and the electrostatic actuator except the anchor point region are etched by using photolithography and deep reactive ion etching techniques to release the movable structure of the electrostatic actuator and the hollowed-out sample stage 305, thereby completing the preparation of the test chip structure using single crystal silicon as the structural layer.
The foregoing illustrates and describes the principles, general features, and advantages of the present invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are intended to further illustrate the principles of the invention, and that various changes and modifications may be made without departing from the spirit and scope of the invention, which is also intended to be covered by the appended claims. The scope of the invention is defined by the claims and their equivalents.
Claims (5)
1. A two-dimensional material in-situ mechanical parameter test chip structure is characterized by comprising an electrostatic actuator, a hollow sample table and a fixed block;
the electrostatic actuator comprises a mass block, the electrostatic actuator is arranged in an axial symmetry mode relative to the mass block, the mass block is a symmetry axis of the electrostatic actuator, one end of a hollow sample stage is connected with the mass block, the other end of the hollow sample stage is connected with a fixed block, the connecting end of the sample stage and the mass block moves along the symmetry axis along with the electrostatic actuator, and the connecting end of the hollow sample stage and the fixed block keeps still;
the electrostatic actuator also comprises a support beam, a stretching execution structure and support beam anchor points positioned at two ends of the support beam;
the stretching execution structure comprises a first movable comb tooth supporting beam, first movable comb teeth vertically connected with the first movable comb tooth supporting beam, a first fixed comb tooth supporting beam, a second fixed comb tooth supporting beam, first fixed comb teeth respectively and vertically connected with the first fixed comb tooth supporting beam and the second fixed comb tooth supporting beam, and fixed comb tooth supporting beam anchor points positioned at the ends, far away from the mass block, of the first fixed comb tooth supporting beam and the second fixed comb tooth supporting beam;
the supporting beam and the first movable comb tooth supporting beam are both vertically connected with the mass block; the first fixed comb teeth and the first movable comb teeth are arranged in a crossed manner, and the number of the first fixed comb teeth is the same as that of the first movable comb teeth;
the support beam, the first movable comb support beam, the first fixed comb and the support beam anchor point are symmetrically arranged around the mass block balance axis;
the first fixed comb support beam and the second fixed comb support beam are arranged in axial symmetry around the mass block;
the electrostatic actuator further comprises a compression actuation structure;
the compression executing structure comprises a second movable comb tooth supporting beam, second movable comb teeth vertically connected with the second movable comb tooth supporting beam, a third fixed comb tooth supporting beam, a fourth fixed comb tooth supporting beam and second fixed comb teeth vertically connected with the third fixed comb tooth supporting beam and the fourth fixed comb tooth supporting beam respectively; one ends of the third fixed comb support beam and the fourth fixed comb support beam, which are far away from the mass block, are connected with the fixed comb support beam in an anchor point manner;
the second movable comb tooth support beam is vertically connected with the mass block and is symmetrical about the mass block; the third fixed comb support beam and the fourth fixed comb support beam are symmetrical about the mass block; the second movable comb teeth and the second fixed comb teeth are arranged in a crossed manner; the number of the second movable comb teeth is the same as that of the second fixed comb teeth;
the first movable comb-tooth support beam and the second movable comb-tooth support beam are arranged back to back, namely the first movable comb-tooth on the first movable comb-tooth support beam and the second movable comb-tooth on the second movable comb-tooth support beam are arranged in opposite directions.
2. The two-dimensional material in-situ mechanical parameter testing chip structure of claim 1, wherein the hollowed-out sample stage is a concave-angle honeycomb-structured carrier beam.
3. The two-dimensional material in-situ mechanical parameter testing chip structure of claim 1, wherein the number of the supporting beams is two, and the compression executing structure and the tension executing structure are both disposed between the two supporting beams.
4. The two-dimensional material in-situ mechanical parameter testing chip structure as claimed in claim 1, wherein the supporting beam anchor point and the fixed comb-tooth supporting beam anchor point are provided with electrode lead bonding pads for leading out signals of the testing chip.
5. A method for preparing the two-dimensional material in-situ mechanical parameter testing chip structure according to claim 1, comprising the following steps:
step 1, growing silicon nitride on the lower surface of an SOI wafer to form a back surface protection layer; the SOI wafer sequentially comprises a silicon device layer, an oxygen burying layer and a silicon substrate from top to bottom, and a back surface protection layer is positioned on the surface of the silicon substrate;
step 2, preparing Ti/Au serving as an electrode lead press welding block on the silicon device layer by adopting photoetching and electron beam evaporation processes;
step 3, preparing an electrostatic actuator, a hollow sample table and a fixed block on the silicon device layer by adopting photoetching and reactive ion etching processes;
step 4, etching the back protective layer below the hollowed sample table and the electrostatic actuator except the anchor point area by adopting photoetching and reactive ion etching processes;
and 5, etching the silicon substrate and the buried oxide layer below the hollowed-out sample table and the electrostatic actuator except the anchor point region by adopting photoetching and deep reactive ion etching technologies, releasing the movable structure of the electrostatic actuator and the hollowed-out sample table, and completing the preparation of the test chip structure.
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| CN202793901U (en) * | 2012-07-02 | 2013-03-13 | 北京工业大学 | In-situ transmission electron microscope (TEM) stretching table capable of researching mechanical property of material at specific temperature |
| CN207743192U (en) * | 2018-01-08 | 2018-08-17 | 中国科学院金属研究所 | A kind of transmission electron microscope electricity sample lever system in situ |
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| CN112113988A (en) * | 2019-06-19 | 2020-12-22 | 中国科学院金属研究所 | Electron microscope in-situ mechanical property testing chip and manufacturing method thereof |
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| CN202793901U (en) * | 2012-07-02 | 2013-03-13 | 北京工业大学 | In-situ transmission electron microscope (TEM) stretching table capable of researching mechanical property of material at specific temperature |
| CN207743192U (en) * | 2018-01-08 | 2018-08-17 | 中国科学院金属研究所 | A kind of transmission electron microscope electricity sample lever system in situ |
| CN111366451A (en) * | 2018-12-26 | 2020-07-03 | 中国科学院上海微***与信息技术研究所 | In-situ characterization device and method for dynamically and mechanically loading nano material |
| CN112113988A (en) * | 2019-06-19 | 2020-12-22 | 中国科学院金属研究所 | Electron microscope in-situ mechanical property testing chip and manufacturing method thereof |
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