CN113258811A - Topological structure and control method of cut-off modular multilevel converter submodule - Google Patents
Topological structure and control method of cut-off modular multilevel converter submodule Download PDFInfo
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/122—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for inverters, i.e. dc/ac converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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Abstract
The invention discloses a submodule topological structure and a control method of a cutoff modular multilevel converter, wherein the submodule topological structure comprises a first half-bridge structure, a current limiting structure, a second half-bridge structure, an eighth diode and a ninth diode; the control method comprises a submodule control method when the modular multilevel converter operates normally and a submodule control method when the modular multilevel converter has a short-circuit fault on the direct current side. The first half-bridge structure comprises a first IGBT, a second IGBT, a first diode, a second diode and a first direct current capacitor; the current limiting structure comprises a third IGBT, a fourth IGBT, a third diode, a fourth diode, a seventh diode, a MOSFET and a mechanical switch; the second half-bridge structure includes a fifth IGBT, a sixth IGBT, a fifth diode, a sixth diode, and a second direct current capacitance. According to the invention, when a short-circuit fault occurs on the direct-current side of the modular multilevel converter, reverse voltage can be output, direct-current fault current can be effectively blocked, and the problem that a half-bridge submodule can not block the direct-current fault current is solved.
Description
Technical Field
The invention belongs to the field of multilevel power electronic converters, and particularly relates to a topological structure of a submodule of a cutoff modular multilevel converter and a control method.
Background
The Modular Multilevel Converter (MMC) has the advantages of high modularity of structure, high-voltage direct-current bus, capability of realizing four-quadrant operation of output voltage and output current, high quality of output voltage waveform and the like, has shown extremely important engineering application prospects in medium-voltage high-power and high-voltage high-power systems, and is gradually popularized and applied to the fields of renewable energy grid connection, medium-voltage motor driving, flexible direct-current power transmission and the like at present.
Because the modular multilevel converter is provided with the high-voltage direct-current bus, when the high-voltage direct-current bus has a short-circuit fault, how to block the direct-current fault current is one of the key technologies for ensuring the safe and stable operation of the modular multilevel converter system. The traditional modularized multi-level converter adopts a half-bridge submodule, when the direct current side of the modularized multi-level converter has a short-circuit fault, the half-bridge submodule cannot block direct current fault current due to the existence of a freewheeling diode in the half-bridge submodule, and the excessive direct current fault current can cause overcurrent of internal devices of the modularized multi-level converter, so that the modularized multi-level converter can be damaged in severe cases.
Aiming at the problem of blocking the direct current fault current of the modular multilevel converter, the conventional method utilizes a full-bridge submodule to replace a half-bridge submodule, and blocks the direct current fault current by controlling the full-bridge submodule to output reverse voltage when the direct current side of the modular multilevel converter has a short-circuit fault. However, the number of the switching devices required by the full-bridge sub-module is twice that of the half-bridge sub-module, so that the operation loss is higher, the operation cost of the modular multilevel converter is increased, and the economy is lower. Therefore, the submodule topological structure of the modular multilevel converter, which has low operation loss and high economical efficiency, is provided to solve the problem of blocking the direct current fault current of the modular multilevel converter, and meets the actual requirement.
In view of the above-mentioned problems, a topology structure of a submodule of a current-cutoff modular multilevel converter and a control method thereof are provided.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a topological structure and a control method of a submodule of a cutoff modular multilevel converter, when the modular multilevel converter normally operates, the submodule can effectively reduce the operation loss, and when a short-circuit fault occurs on the direct current side of the modular multilevel converter, the submodule can output reverse voltage, effectively block direct current fault current, and solve the problem that the traditional half-bridge submodule cannot block the direct current fault current.
The purpose of the invention can be realized by the following technical scheme:
a current-breaking modular multilevel converter submodule topological structure comprises a first half-bridge structure, a current limiting structure, a second half-bridge structure, an eighth diode and a ninth diode, wherein the first half-bridge structure is connected with a cathode of the eighth diode, the second half-bridge structure is connected with an anode of the ninth diode, the current limiting structure is arranged between the first half-bridge structure and the second half-bridge structure and is connected with the first half-bridge structure and the second half-bridge structure, and an anode of the eighth diode is connected with a cathode of the ninth diode.
Furthermore, the first half-bridge structure comprises a first IGBT, a second IGBT, a first diode, a second diode and a first direct current capacitor, wherein a collector electrode of the first IGBT is respectively connected with a cathode of the first diode and an anode of the first direct current capacitor, and the connecting point is connected with a cathode of the eighth diode; the emitting electrode of the first IGBT is respectively connected with the anode of the first diode, the collector of the second IGBT and the cathode of the second diode, the connection point is used as the positive end of the sub-module, the emitting electrode of the second IGBT is respectively connected with the anode of the second diode and the negative electrode of the first direct current capacitor, and the connection point is connected with the current limiting structure.
Furthermore, the current limiting structure comprises a third IGBT, a fourth IGBT, a third diode, a fourth diode, a seventh diode, an MOSFET and a mechanical switch, wherein an emitter of the third IGBT is respectively connected with an anode of the third diode, an anode of the seventh diode and a source of the MOSFET, and the connecting point is connected with an emitter of the second IGBT; the collector of the third IGBT is respectively connected with the cathode of the third diode, the anode of the fourth diode and the emitter of the fourth IGBT; the collector of the fourth IGBT is respectively connected with the cathode of the fourth diode and the mechanical switch, and the connecting point is connected with the second half-bridge structure; and the drain electrode of the MOSFET is respectively connected with the cathode of the seventh diode and the mechanical switch.
Further, the second half-bridge structure includes a fifth IGBT, a sixth IGBT, a fifth diode, a sixth diode, and a second dc capacitor, a collector of the fifth IGBT is connected to a cathode of the fifth diode and an anode of the second dc capacitor, respectively, and the connection point is connected to a collector of the fourth IGBT.
The emitter of the fifth IGBT is respectively connected with the anode of a fifth diode, the collector of a sixth IGBT and the cathode of the sixth diode, and the connection point is used as the negative end of the submodule; and the emitter of the sixth IGBT is respectively connected with the anode of the sixth diode and the cathode of the second direct current capacitor, and the connecting point is connected with the anode of the ninth diode.
Furthermore, the modular multilevel converter suitable for the sub-module topological structure is of an ABC three-phase structure, each phase comprises an upper bridge arm and a lower bridge arm which are the same, each upper bridge arm and each lower bridge arm respectively comprise a bridge arm inductor and at least one sub-module, each sub-module is connected with the bridge arm inductor in series, the lower end of each phase of the upper bridge arm is connected with the alternating current side after being short-circuited with the upper end of the lower bridge arm, the upper end of the three-phase upper bridge arm is connected with the direct current side after being short-circuited, and the lower end of the three-phase lower bridge arm is connected with the direct current side after being short-circuited.
The method comprises a control method of a submodule during normal operation of the modular multilevel converter and a control method of the submodule during short-circuit fault of a direct current side of the modular multilevel converter.
Further, the control method of the submodule during normal operation of the modular multilevel converter comprises the following steps: the third IGBT, the fourth IGBT, the MOSFET and the mechanical switch are all kept on, the first IGBT and the second IGBT operate complementarily, and the fifth IGBT and the sixth IGBT operate complementarily; when the first IGBT is conducted, the second IGBT is turned off, the fifth IGBT is conducted and the sixth IGBT is turned off, the sub-module outputs a voltage uSM＝uc1(ii) a When the first IGBT is turned on, the second IGBT is turned off, the fifth IGBT is turned off,when the sixth IGBT is conducted, the sub-module outputs a voltage uSM＝uc1+uc2(ii) a When the first IGBT is turned off, the second IGBT is turned on, the fifth IGBT is turned on and the sixth IGBT is turned off, the sub-module outputs a voltage uSM0; when the first IGBT is turned off, the second IGBT is turned on, the fifth IGBT is turned off and the sixth IGBT is turned on, the sub-module outputs a voltage uSM＝uc2。
Further, the method for controlling the submodule when the short-circuit fault occurs on the direct-current side of the modular multilevel converter comprises the following steps:
s1, turning off the first IGBT, the second IGBT, the fifth IGBT and the sixth IGBT;
s2, turning off the MOSFET;
s3, turning off the mechanical switch;
and S4, turning off the third IGBT and the fourth IGBT.
The invention has the beneficial effects that:
1. compared with the traditional half-bridge sub-module, the topological structure of the current-cutoff modular multilevel converter sub-module can output reverse voltage when short-circuit fault occurs on the direct current side of the modular multilevel converter, effectively blocks direct current fault current, and solves the problem that the traditional half-bridge sub-module cannot block the direct current fault current;
2. the topological structure of the submodule of the cutoff modularized multi-level converter is equal to two cascaded half-bridge submodules in normal operation, compared with the conventional method which utilizes the full-bridge submodule, the topological structure of the cutoff modularized multi-level converter effectively reduces the loss of the submodule in normal operation, and meanwhile, the current limiting structure in the submodule utilizes the MOSFET and the mechanical switch to realize low on-resistance, so that the loss of the submodule in normal operation is further reduced, the operation cost is lower, and the cutoff modularized multi-level converter has higher economy;
3. the cutout modularized multi-level converter submodule topological structure is equal to two cascaded half-bridge submodules in normal operation, a control method of a traditional modularized multi-level converter system can be used, and compared with a modularized multi-level converter adopting full-bridge submodules, the cutout modularized multi-level converter submodule topological structure is simpler and easier to implement and has higher practicability.
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In order to more clearly illustrate the embodiments or technical solutions in the prior art of the present invention, the drawings used in the description of the embodiments or prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
Fig. 1 is a schematic diagram of a sub-module topology of a three-phase modular multilevel converter according to an embodiment of the invention;
fig. 2 is a schematic diagram of a three-phase modular multilevel converter topology according to an embodiment of the invention;
FIG. 3 is a schematic diagram of the current flow direction in the sub-module under the DC fault according to the embodiment of the present invention
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, a current-blocking modular multilevel converter sub-module topology structure can be applied to a modular multilevel converter, and includes a first half-bridge structure 11, a current-limiting structure 12, a second half-bridge structure 13, and an eighth diode (D)8) And a ninth diode (D)9) The first half-bridge structure 11 is connected to the cathode of the eighth diode, the second half-bridge structure 13 is connected to the anode of the ninth diode, and the current limiting structure 12 is disposed between the first half-bridge structure 11 and the second half-bridge structure 13 and connected to the first half-bridge structure 11 and the second half-bridge structure 13. And the anode of the eighth diode is connected with the cathode of the ninth diode.
The first half-bridge structure 11 comprises a first IGBT (insulated gate bipolar transistor) (T)1) And a second IGBT (T)2) A first diode (D)1) Second, secondDiode (D)2) And a first DC capacitor (C)1) The collector electrode of the first IGBT is respectively connected with the cathode of the first diode and the anode of the first direct current capacitor, and the connecting point is connected with the cathode of the eighth diode; the emitter of the first IGBT is respectively connected with the anode of the first diode, the collector of the second IGBT and the cathode of the second diode, and the connection point is used as the positive terminal (P1) of the sub-module; the emitter of the second IGBT is respectively connected with the anode of the second diode and the cathode of the first direct current capacitor, and the connecting point is connected with the current limiting structure 12; the current limiting structure 12 comprises a third IGBT (T)3) And a fourth IGBT (T)4) A third diode (D)3) A fourth diode (D)4) A seventh diode (D)7) MOSFET (field effect transistor) (T)7) And a mechanical switch (S)1) The emitting electrode of the third IGBT is respectively connected with the anode of the third diode, the anode of the seventh diode and the source electrode of the MOSFET, and the connecting point is connected with the emitting electrode of the second IGBT; the collector of the third IGBT is respectively connected with the cathode of the third diode, the anode of the fourth diode and the emitter of the fourth IGBT; the collector of the fourth IGBT is connected to the cathode of the fourth diode and the mechanical switch, respectively, and this connection point is connected to the second half-bridge structure 13; and the drain electrode of the MOSFET is respectively connected with the cathode of the seventh diode and the mechanical switch.
The second half-bridge configuration 13 comprises a fifth IGBT (T)5) And a sixth IGBT (T)6) A fifth diode (D)5) And a sixth diode (D)6) And a second DC capacitor (C)2) And the collector electrode of the fifth IGBT is respectively connected with the cathode of the fifth diode and the anode of the second direct current capacitor, and the connecting point is connected with the collector electrode of the fourth IGBT. The emitter of the fifth IGBT is respectively connected with the anode of a fifth diode, the collector of a sixth IGBT and the cathode of the sixth diode, and the connection point is used as the negative terminal (P2) of the submodule; and the emitter of the sixth IGBT is respectively connected with the anode of the sixth diode and the cathode of the second direct current capacitor, and the connecting point is connected with the anode of the ninth diode.
As shown in fig. 2, the modular multilevel converter suitable for the sub-module topology structure provided by the present invention is an ABC three-phase structure, each phase includes an upper arm 21 and a lower arm 22 which are the same, each of the upper arm 21 and the lower arm 22 includes an arm inductor 23 and at least one sub-module 24, the sub-module 24 is connected in series with the arm inductor 23, the lower end of each phase of the upper arm 21 is connected to the upper end of the lower arm 22 after being short-circuited, the upper end of the three-phase upper arm 21 is connected to the dc side after being short-circuited, and the lower end of the three-phase lower arm 22 is connected to the dc side after being short-circuited.
A control method of a cutoff modularized multi-level converter submodule specifically comprises a control method of a submodule during normal operation of a modularized multi-level converter and a control method of a submodule during short-circuit fault of a direct-current side of the modularized multi-level converter.
The control method of the submodule during the normal operation of the modular multilevel converter comprises the following steps: the third IGBT, the fourth IGBT, the MOSFET and the mechanical switch are all kept on, the first IGBT and the second IGBT operate complementarily, and the fifth IGBT and the sixth IGBT operate complementarily; when the first IGBT is conducted, the second IGBT is turned off, the fifth IGBT is conducted and the sixth IGBT is turned off, the sub-module outputs a voltage uSM＝uc1(ii) a When the first IGBT is conducted, the second IGBT is turned off, the fifth IGBT is turned off and the sixth IGBT is conducted, the sub-module outputs a voltage uSM＝uc1+uc2(ii) a When the first IGBT is turned off, the second IGBT is turned on, the fifth IGBT is turned on and the sixth IGBT is turned off, the sub-module outputs a voltage uSM0; when the first IGBT is turned off, the second IGBT is turned on, the fifth IGBT is turned off and the sixth IGBT is turned on, the sub-module outputs a voltage uSM＝uc2。
The control method of the submodule when the short-circuit fault occurs on the direct current side of the modular multilevel converter comprises the following steps:
s1, turning off the first IGBT, the second IGBT, the fifth IGBT and the sixth IGBT;
s2, turning off the MOSFET;
s3, turning off the mechanical switch;
and S4, turning off the third IGBT and the fourth IGBT.
As shown in fig. 3, when a short-circuit fault occurs on the dc side of the modular multilevel converter, current flows in from the negative terminal of the sub-module, and then flows through the fifth diode, the second dc capacitor, the ninth diode, the eighth diode, the first dc capacitor, and the second diode, and then flows out from the positive terminal of the sub-module, at this time, the sub-module outputs a reverse voltage, which can block the dc fault current.
In the description herein, references to the description of "one embodiment," "an example," "a specific example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed.
Claims (8)
1. A cutout modularization multilevel converter submodule topological structure is characterized in that the submodule topological structure comprises a first half-bridge structure (11), a current limiting structure (12), a second half-bridge structure (13), an eighth diode and a ninth diode, wherein the first half-bridge structure (11) is connected with a cathode of the eighth diode, the second half-bridge structure (13) is connected with an anode of the ninth diode, the current limiting structure (12) is arranged between the first half-bridge structure (11) and the second half-bridge structure (13) and is connected with the first half-bridge structure (11) and the second half-bridge structure (13), and an anode of the eighth diode is connected with a cathode of the ninth diode.
2. A cutout modular multilevel converter sub-module topology according to claim 1, characterized in that the first half-bridge structure (11) comprises a first IGBT, a second IGBT, a first diode, a second diode and a first dc capacitor, the collector of the first IGBT is connected to the cathode of the first diode and the anode of the first dc capacitor, respectively, and the connection point is connected to the cathode of the eighth diode; the emitting electrode of the first IGBT is respectively connected with the anode of the first diode, the collector of the second IGBT and the cathode of the second diode, the connection point is used as the positive end of the sub-module, the emitting electrode of the second IGBT is respectively connected with the anode of the second diode and the cathode of the first direct current capacitor, and the connection point is connected with the current limiting structure (12).
3. A cutout modular multilevel converter sub-module topology according to claim 2, characterized in that said current limiting structure (12) comprises a third IGBT, a fourth IGBT, a third diode, a fourth diode, a seventh diode, a MOSFET and a mechanical switch, the emitter of said third IGBT is connected to the anode of the third diode, the anode of the seventh diode and the source of the MOSFET, respectively, which connection is connected to the emitter of the second IGBT; the collector of the third IGBT is respectively connected with the cathode of the third diode, the anode of the fourth diode and the emitter of the fourth IGBT; the collector of the fourth IGBT is respectively connected with the cathode of the fourth diode and the mechanical switch, and the connecting point is connected with the second half-bridge structure (13); and the drain electrode of the MOSFET is respectively connected with the cathode of the seventh diode and the mechanical switch.
4. A cutout modular multilevel converter sub-module topology according to claim 3, wherein the second half-bridge structure (13) comprises a fifth IGBT, a sixth IGBT, a fifth diode, a sixth diode and a second dc capacitor, wherein a collector of the fifth IGBT is connected to a cathode of the fifth diode and an anode of the second dc capacitor, respectively, and the connection point is connected to a collector of the fourth IGBT;
the emitter of the fifth IGBT is respectively connected with the anode of a fifth diode, the collector of a sixth IGBT and the cathode of the sixth diode, and the connection point is used as the negative end of the submodule; and the emitter of the sixth IGBT is respectively connected with the anode of the sixth diode and the cathode of the second direct current capacitor, and the connecting point is connected with the anode of the ninth diode.
5. A current-breaking modular multilevel converter submodule topology structure according to claim 4, characterized in that a modular multilevel converter suitable for the submodule topology structure is an ABC three-phase structure, each phase comprises an upper bridge arm (21) and a lower bridge arm (22) which are the same, each of the upper bridge arm (21) and the lower bridge arm (22) comprises a bridge arm inductor (23) and at least one submodule (24), the submodule (24) is connected in series with the bridge arm inductor (23), the lower end of each phase of the upper bridge arm (21) is connected with the upper end of the lower bridge arm (22) after being short-circuited, the upper end of the three-phase upper bridge arm (21) is connected with the DC side after being short-circuited, and the lower end of the three-phase lower bridge arm (22) is connected with the DC side after being short-circuited.
6. The method for controlling the blocking of the submodule of the modular multilevel converter according to claim 5, wherein the method comprises a method for controlling the submodule during normal operation of the modular multilevel converter and a method for controlling the submodule during short-circuit fault on the direct current side of the modular multilevel converter.
7. The method for controlling a cutout modular multilevel converter submodule according to claim 6, wherein the method for controlling the submodule during normal operation of the modular multilevel converter comprises: the third IGBT, the fourth IGBT, the MOSFET and the mechanical switch are all kept on, the first IGBT and the second IGBT operate complementarily, and the fifth IGBT and the sixth IGBT operate complementarily; when the first IGBT is conducted, the second IGBT is turned off, the fifth IGBT is conducted and the sixth IGBT is turned off, the sub-module outputs a voltage uSM＝uc1(ii) a When the first IGBT is conducted, the second IGBT is turned off, the fifth IGBT is turned off and the sixth IGBT is conducted, the sub-module outputs a voltage uSM＝uc1+uc2(ii) a When the first IGBT is turned off, the second IGBT is turned on, the fifth IGBT is turned on and the sixth IGBT is turned off, the sub-module outputs a voltage uSM0; when the first IGBT is turned off, the second IGBT is turned on, the fifth IGBT is turned off, and the sixth IGBT is turned onWhen T is conducted, the sub-module outputs a voltage uSM＝uc2。
8. The method for controlling the blocking of the submodule of the modular multilevel converter according to claim 7, wherein the method for controlling the submodule when the short-circuit fault occurs on the dc side of the modular multilevel converter comprises the following steps:
s1, turning off the first IGBT, the second IGBT, the fifth IGBT and the sixth IGBT;
s2, turning off the MOSFET;
s3, turning off the mechanical switch;
and S4, turning off the third IGBT and the fourth IGBT.
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| CN114024458A (en) * | 2021-11-08 | 2022-02-08 | 华北电力大学（保定） | Capacitor voltage balance control method and current converter |
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| CN106452104A (en) * | 2016-09-13 | 2017-02-22 | 清华大学 | Unipolar current cross-connected three-level sub-module |
| CN111200366A (en) * | 2020-01-15 | 2020-05-26 | 西安交通大学 | MMC submodule topological structure of equivalent full-bridge submodule with direct-current fault blocking capability |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114024458A (en) * | 2021-11-08 | 2022-02-08 | 华北电力大学（保定） | Capacitor voltage balance control method and current converter |
| CN114024458B (en) * | 2021-11-08 | 2023-10-10 | 华北电力大学（保定） | Capacitor voltage balance control method and converter |
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