CN104993683A - Modular multi-level current converter sub-module circuit - Google Patents
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Abstract
The invention relates to a modular multi-level current converter sub-module circuit, which comprises a capacitor C1, a capacitor C2, five semiconductor switches from T1 to T5, and six diodes from D1 to D6. A collector of the semiconductor switch T1 is connected with a cathode of the diode D1, a collector of the semiconductor switch T2 is connected with a cathode of the diode D2, a collector of the semiconductor switch T3 is connected with a cathode of the diode D3, a collector of the semiconductor switch T4 is connected with a cathode of the diode D4, a collector of the semiconductor switch T5 is connected with a cathode of the diode D5, an emitter of the semiconductor switch T1 is connected with an anode of the diode D1, an emitter of the semiconductor switch T2 is connected with an anode of the diode D2, an emitter of the semiconductor switch T3 is connected with an anode of the diode D3, an emitter of the semiconductor switch T4 is connected with an anode of the diode D4, and an emitter of the semiconductor switch T5 is connected with an anode of the diode D5; the emitter of the semiconductor switch T1 is connected with a cathode of the diode D6, and the emitter of the semiconductor switch T5 is connected with the collector of the semiconductor switch T3; a positive electrode end of the capacitor C1 is connected with the collector of the semiconductor switch T5, the emitter of the semiconductor switch T4 and a negative electrode end of the capacitor C2; a negative electrode end of the capacitor C1 is connected with the emitter of the semiconductor switch T3 and an anode of the diode D6; a positive electrode end of the capacitor C2 is connected with the collector of the semiconductor switch T2; and the emitter of the semiconductor switch T2 is connected with the collector of the semiconductor switch T4 and the collector of the semiconductor switch T1.
Description
Technical field
The present invention relates to electric power system technical field of direct current power transmission, particularly relate to Modularized multi-level converter sub-module circuit.
Background technology
Flexible DC power transmission is a kind of HVDC Transmission Technology based on voltage source converter, self-turn-off device and pulse modulation technology.Improve electric network composition, Optimal Power Flow distribution because it has, improve the unique advantages such as security of operation stability, have broad application prospects in renewable energy source power, Asynchronous Interconnection and the big city central concentrated load occasion such as to power.Because modularization multi-level converter (Modular MultilevelConverter, hereinafter referred to as MMC) has, the degree of modularity is high, harmonic content is little, switching device small loss and other features, is very suitable for flexible direct current power transmission system.
MMC majority in current application flexibility direct current transportation Practical Project adopts half-bridge submodular circuits.Half-bridge submodular circuits device used is less, loss is lower, but does not possess the ability removing DC side fault current.When DC side breaks down, because anti-paralleled diode still can provide path for fault current, system approximation generation three-phase shortcircuit, fault restriction conveyance capacity is poor, the safe and stable operation of easy harm system.On the other hand, when direct-current transmission voltage reach superhigh pressure even ultra high voltage grade time, because its submodule needs to use higher withstand voltage semiconductor power device, or need to use more submodule quantity, make converter holistic cost higher.
Summary of the invention
Based on this, be necessary problem that is high for half-bridge submodular circuits cost, fault restriction conveyance capacity difference, a kind of MMC submodular circuits with direct-current short circuit fault ride-through capacity is provided.
A kind of Modularized multi-level converter sub-module circuit, comprising:
Capacitor C1, C2, semiconductor switch T1, T2, T3, T4, T5, diode D1, D2, D3, D4, D5, D6;
The collector electrode of described semiconductor switch T1, T2, T3, T4, T5 is connected with the negative electrode of diode D1, D2, D3, D4, D5 respectively, and the emitter of described semiconductor switch T1, T2, T3, T4, T5 is connected with the anode of diode D1, D2, D3, D4, D5 respectively; The emitter of semiconductor switch T1 is connected with the negative electrode of diode D6, and as the positive terminal of submodule, the emitter of semiconductor switch T5 is connected with the collector electrode of semiconductor switch T3, as the negative pole end of submodule; The positive terminal of capacitor C1 is connected with the emitter of the collector electrode of semiconductor switch T5, semiconductor switch T4 and the negative pole end of capacitor C2; The negative pole end of capacitor C1 is connected with the anode of the emitter of semiconductor switch T3 and diode D6; The positive terminal of capacitor C2 is connected with the collector electrode of semiconductor switch T2; The emitter of semiconductor switch T2 is connected with the collector electrode of the collector electrode of semiconductor switch T4 and semiconductor switch T1;
When there is direct-current short circuit fault, semiconductor switch T1, T2, T3, T4, T5 turn off, and diode D1, D2, D3, D4, D5, D6 carry out one-way conduction to electric current, and fault current flows through capacitor C1, C2.
Above-mentioned Modularized multi-level converter sub-module circuit, the negative electrode of the emitter of semiconductor switch T1 with diode D6 is connected, the emitter of semiconductor switch T5 is connected with the collector electrode of semiconductor switch T3, and the positive terminal of capacitor C1 is connected with the emitter of the collector electrode of semiconductor switch T5, semiconductor switch T4 and the negative pole end of capacitor C2; The negative pole end of capacitor C1 is connected with the anode of the emitter of semiconductor switch T3 and diode D6; The positive terminal of capacitor C2 is connected with the collector electrode of semiconductor switch T2; The emitter of semiconductor switch T2 is connected with the collector electrode of the collector electrode of semiconductor switch T4 and semiconductor switch T1, when there is DC side fault, semiconductor switch T1, T2, T3, T4, T5 turn off, due to the one-way conduction characteristic of diode, fault current will flow through capacitor C1 and/or C2, thus reduce fault current rapidly, there is good direct-current short circuit fault ride-through capacity.And above-mentioned Modularized multi-level converter sub-module circuit device used is few, structure is simple, and hardware cost is low.
A kind of Modularized multi-level converter sub-module circuit, comprising:
Capacitor C1, C2, semiconductor switch T1, T2, T3, T4, T5, diode D1, D2, D3, D4, D5, D6;
The collector electrode of described semiconductor switch T1, T2, T3, T4, T5 is connected with the negative electrode of diode D1, D2, D3, D4, D5 respectively, and the emitter of described semiconductor switch T1, T2, T3, T4, T5 is connected with the anode of diode D1, D2, D3, D4, D5 respectively; The collector electrode of semiconductor switch T1 is connected with the anode of diode D6, and as the negative pole end of submodule, the emitter of semiconductor switch T3 is connected with the collector electrode of semiconductor switch T5, as the positive terminal of submodule; The negative pole end of capacitor C1 is connected with the emitter of the emitter of semiconductor switch T5, semiconductor switch T4 and the positive terminal of capacitor C2; The positive terminal of capacitor C1 is connected with the negative electrode of the collector electrode of semiconductor switch T3 and diode D6; The negative pole end of capacitor C2 is connected with the emitter of semiconductor switch T2; The collector electrode of semiconductor switch T2 is connected with the collection emitter of the emitter of semiconductor switch T4 and semiconductor switch T1;
When there is direct-current short circuit fault, semiconductor switch T1, T2, T3, T4, T5 turn off, and diode D1, D2, D3, D4, D5, D6 carry out one-way conduction to electric current, and fault current is by capacitor C1, C2.
Above-mentioned Modularized multi-level converter sub-module circuit, the anode of the collector electrode of semiconductor switch T1 with diode D6 is connected, the emitter of semiconductor switch T3 is connected with the collector electrode of semiconductor switch T5, and the negative pole end of capacitor C1 is connected with the emitter of the emitter of semiconductor switch T5, semiconductor switch T4 and the positive terminal of capacitor C2; The positive terminal of capacitor C1 is connected with the negative electrode of the collector electrode of semiconductor switch T3 and diode D6; The negative pole end of capacitor C2 is connected with the emitter of semiconductor switch T2; The collector electrode of semiconductor switch T2 is connected with the collection emitter of the emitter of semiconductor switch T4 and semiconductor switch T1, when there is DC side fault, semiconductor switch T1, T2, T3, T4, T5 turn off, due to the one-way conduction characteristic of diode, fault current will flow through capacitor C1 and/or C2, thus reduce fault current rapidly, there is good direct-current short circuit fault ride-through capacity.And above-mentioned Modularized multi-level converter sub-module circuit device used is few, structure is simple, and hardware cost is low.
A kind of Modularized multi-level converter sub-module circuit, comprise the first submodule and the second submodule, the positive terminal of described first submodule is connected with the negative pole end of described second submodule.
A kind of Modularized multi-level converter sub-module circuit, comprise the first submodule and the second submodule, the positive terminal of described first submodule is connected with the negative pole end of the second submodule.
Above-mentioned Modularized multi-level converter sub-module circuit, by multiple submodule is connected, lower withstand voltage semiconductor power device can be used to realize the output of high voltage, reduce the submodule quantity in modularization multi-level converter, reduce converter holistic cost.
Accompanying drawing explanation
Fig. 1 is the schematic diagram with the Modularized multi-level converter sub-module circuit of direct-current short circuit fault ride-through capacity of the first embodiment.
Fig. 2 is the schematic diagram with the Modularized multi-level converter sub-module circuit of direct-current short circuit fault ride-through capacity of the second embodiment.
Fig. 3 is the connection back-to-back between the Modularized multi-level converter sub-module with direct-current short circuit fault ride-through capacity of an embodiment.
Fig. 4 be an embodiment the Modularized multi-level converter sub-module with direct-current short circuit fault ride-through capacity between be connected in series.
Embodiment
Below in conjunction with accompanying drawing of the present invention, technical scheme of the present invention is described further.
Figure 1 shows that the circuit diagram with the Modularized multi-level converter sub-module circuit of direct-current short circuit fault ride-through capacity of the first embodiment of the present invention.This submodular circuits comprises:
Capacitor C1, C2, semiconductor switch T1, T2, T3, T4, T5, diode D1, D2, D3, D4, D5, D6;
The collector electrode of described semiconductor switch T1, T2, T3, T4, T5 is connected with the negative electrode of diode D1, D2, D3, D4, D5 respectively, and the emitter of described semiconductor switch T1, T2, T3, T4, T5 is connected with the anode of diode D1, D2, D3, D4, D5 respectively; The emitter of semiconductor switch T1 is connected with the negative electrode of diode D6, and as the positive terminal of submodule, the emitter of semiconductor switch T5 is connected with the collector electrode of semiconductor switch T3, as the negative pole end of submodule; The positive terminal of capacitor C1 is connected with the emitter of the collector electrode of semiconductor switch T5, semiconductor switch T4 and the negative pole end of capacitor C2; The negative pole end of capacitor C1 is connected with the anode of the emitter of semiconductor switch T3 and diode D6; The positive terminal of capacitor C2 is connected with the collector electrode of semiconductor switch T2; The emitter of semiconductor switch T2 is connected with the collector electrode of the collector electrode of semiconductor switch T4 and semiconductor switch T1;
When there is direct-current short circuit fault, semiconductor switch T1, T2, T3, T4, T5 turn off, and diode D1, D2, D3, D4, D5, D6 carry out one-way conduction to electric current, and fault current flows through capacitor C1, C2.
The above-mentioned operation principle with the Modularized multi-level converter sub-module circuit of direct-current short circuit fault ride-through capacity is as follows:
During normal work, when electric current flows to the negative pole of submodule by the positive pole of submodule, apply gate pole conducting drive singal to semiconductor switch T1, make T1 work in normal open state, now diode D1 is shorted always; And diode D6 is in normal off state due to capacitance voltage effect.Now, conducting and the shutoff of semiconductor switch T2, T3, T4, T5 can be controlled according to actual needs flexibly, make electric current flow through different paths, thus the input of control capacitor C1, C2 and excision.Such as, when semiconductor switch T2, T3, T4, T5 all turn off, electric current flows through semiconductor switch T1 from the positive pole of submodule, diode D2, capacitor C2, C1, and diode D3 arrives the negative pole of submodule; When semiconductor switch T5 conducting, when semiconductor switch T2, T3, T4 turn off, diode D6, D3 are shorted, and electric current flows through semiconductor switch T1 from the positive pole of submodule, diode D2, capacitor C2, and semiconductor switch T5 arrives the negative pole of submodule.
When electric current flows to the positive pole of submodule by the negative pole of submodule, can conducting semiconductor switch T3, turn off other semiconductor switchs, submodule is excised.Now, electric current flows through from the negative pole of submodule the positive pole that semiconductor switch T3, diode D6 arrive submodule.
When detecting Converter DC-side short trouble, all semiconductor switchs locking immediately of submodule turns off.When fault current is flowed into by submodule positive pole, flow through diode D1, D2, capacitor C2, C1, diode D3, flowed out by submodule negative pole; When fault current is flowed into by submodule negative pole, flow through diode D5, capacitor C1, diode D6, flowed out by submodule positive pole.Due to the effect of DC capacitor voltage, fault current can decline rapidly, thus the semiconductor switch of available protecting submodular circuits and diode.
Figure 2 shows that the circuit diagram with the Modularized multi-level converter sub-module circuit of direct-current short circuit fault ride-through capacity of the second embodiment of the present invention.This submodular circuits comprises:
Capacitor C1, C2, semiconductor switch T1, T2, T3, T4, T5, diode D1, D2, D3, D4, D5, D6;
The collector electrode of described semiconductor switch T1, T2, T3, T4, T5 is connected with the negative electrode of diode D1, D2, D3, D4, D5 respectively, and the emitter of described semiconductor switch T1, T2, T3, T4, T5 is connected with the anode of diode D1, D2, D3, D4, D5 respectively; The collector electrode of semiconductor switch T1 is connected with the anode of diode D6, and as the negative pole end of submodule, the emitter of semiconductor switch T3 is connected with the collector electrode of semiconductor switch T5, as the positive terminal of submodule; The negative pole end of capacitor C1 is connected with the emitter of the emitter of semiconductor switch T5, semiconductor switch T4 and the positive terminal of capacitor C2; The positive terminal of capacitor C1 is connected with the negative electrode of the collector electrode of semiconductor switch T3 and diode D6; The negative pole end of capacitor C2 is connected with the emitter of semiconductor switch T2; The collector electrode of semiconductor switch T2 is connected with the collection emitter of the emitter of semiconductor switch T4 and semiconductor switch T1;
When there is direct-current short circuit fault, semiconductor switch T1, T2, T3, T4, T5 turn off, and diode D1, D2, D3, D4, D5, D6 carry out one-way conduction to electric current, and fault current is by capacitor C1, C2.
The above-mentioned operation principle with the Modularized multi-level converter sub-module circuit of direct-current short circuit fault ride-through capacity is as follows:
During normal work, when electric current flows to the negative pole of submodule by the positive pole of submodule, gate pole conducting drive singal is applied to semiconductor switch T1 always, make T1 work in normal open state, and diode D6 is in normal off state due to capacitance voltage effect.Now, conducting and the shutoff of semiconductor switch T2, T3, T4, T5 can be controlled according to actual needs flexibly, make electric current flow through different paths, thus the input of control capacitor C1, C2 and excision.
When detecting Converter DC-side short trouble, all semiconductor switchs locking immediately of submodule turns off.When fault current is flowed into by submodule positive pole, flow through diode D3, capacitor C1, C2, diode D2, D1.When fault current is flowed into by submodule negative pole, flow through diode D6, capacitor C1, diode D5, flowed out by submodule positive pole.Due to the effect of DC capacitor voltage, fault current can decline rapidly, thus the semiconductor switch of available protecting submodular circuits and diode.
In actual applications, the submodular circuits of the submodular circuits of above-mentioned first embodiment and above-mentioned second embodiment can be coupled together, form new submodular circuits, to increase output voltage.Embodiment has two kinds.
Fig. 3 is the connection back-to-back between the Modularized multi-level converter sub-module with direct-current short circuit fault ride-through capacity of an embodiment.In this connected mode, Modularized multi-level converter sub-module circuit, comprise the first submodule and the second submodule, described first submodule comprises the Modularized multi-level converter sub-module circuit in the first embodiment, described second submodule comprises the Modularized multi-level converter sub-module circuit in the second embodiment, and the positive terminal of described first submodule is connected with the negative pole end of described second submodule.
Fig. 4 be an embodiment the Modularized multi-level converter sub-module with direct-current short circuit fault ride-through capacity between be connected in series.In this connected mode, Modularized multi-level converter sub-module circuit, comprise the first submodule and the second submodule, it is characterized in that, described first submodule and the second submodule include the Modularized multi-level converter sub-module circuit in the first embodiment, and the positive terminal of described first submodule is connected with the negative pole end of the second submodule.
In practical situations both, can by two or more submodular circuits by connected mode or the mode that is connected in series couple together back-to-back.The number of actual submodular circuits can be determined according to required output voltage values.
In connected mode back-to-back be connected in series in mode, the operation principle of each submodule is similar to operation principle when only having a submodule, repeats no more herein.
Semiconductor switch T1, T2, T3, T4, T5 of the present invention, can use any turn-off semiconductor switch.
Capacitor C1, C2 of the present invention can be direct current capacitor.
Diode D1, D2, D3, D4, D5, D6 of the present invention can be fly-wheel diode.
The MMC submodular circuits with direct-current short circuit fault ride-through capacity that the present invention proposes has the following advantages:
All semiconductor switchs in the Modularized multi-level converter sub-module circuit of 1, the application withstand voltage all identical, and the half being only that submodule exports.Therefore lower withstand voltage semiconductor power device can be used to realize the output of high voltage.And the Modularized multi-level converter sub-module circuit of the application can pass through back-to-back or the mode that is connected in series is connected, and further increases output voltage.
Capacitor C1, C2 in the Modularized multi-level converter sub-module circuit of 2, the application, can realize independently discharge and recharge, be convenient to the balance of voltage between first, second capacitor.
3, the Modularized multi-level converter sub-module circuit of the application, compare the submodular circuits that other have direct-current short circuit fault clearance ability, only need increase a semiconductor switch with anti-parallel diodes and a diode on the basis of two half-bridge submodules, circuit structure is simple, reduces converter cost.
4, the Modularized multi-level converter sub-module circuit of the application, when electric current flows to the positive pole of submodule by the negative pole of submodule, can open semiconductor switch T3, turn off other semiconductor switchs, be excised by submodule; Also can pass through conducting semiconductor switch T1, T4, T5, turn off other semiconductor switchs, submodule is excised.Control mode is more flexible, and avoids the long-term shutoff of semiconductor switch T1 and the long-term conducting of diode D6, provides the approach optimizing loss.
Each technical characteristic of the above embodiment can combine arbitrarily, for making description succinct, the all possible combination of each technical characteristic in above-described embodiment is not all described, but, as long as the combination of these technical characteristics does not exist contradiction, be all considered to be the scope that this specification is recorded.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be construed as limiting the scope of the patent.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (10)
1. a Modularized multi-level converter sub-module circuit, is characterized in that, comprising:
Capacitor C1, C2, semiconductor switch T1, T2, T3, T4, T5, diode D1, D2, D3, D4, D5, D6;
The collector electrode of described semiconductor switch T1, T2, T3, T4, T5 is connected with the negative electrode of diode D1, D2, D3, D4, D5 respectively, and the emitter of described semiconductor switch T1, T2, T3, T4, T5 is connected with the anode of diode D1, D2, D3, D4, D5 respectively; The emitter of semiconductor switch T1 is connected with the negative electrode of diode D6, and as the positive terminal of submodule, the emitter of semiconductor switch T5 is connected with the collector electrode of semiconductor switch T3, as the negative pole end of submodule; The positive terminal of capacitor C1 is connected with the emitter of the collector electrode of semiconductor switch T5, semiconductor switch T4 and the negative pole end of capacitor C2; The negative pole end of capacitor C1 is connected with the anode of the emitter of semiconductor switch T3 and diode D6; The positive terminal of capacitor C2 is connected with the collector electrode of semiconductor switch T2; The emitter of semiconductor switch T2 is connected with the collector electrode of the collector electrode of semiconductor switch T4 and semiconductor switch T1;
When there is direct-current short circuit fault, semiconductor switch T1, T2, T3, T4, T5 turn off, and diode D1, D2, D3, D4, D5, D6 carry out one-way conduction to electric current, and fault current flows through capacitor C1, C2.
2. Modularized multi-level converter sub-module circuit according to claim 1, is characterized in that, described semiconductor switch T1, T2, T3, T4, T5's is withstand voltage all identical.
3. Modularized multi-level converter sub-module circuit according to claim 1, is characterized in that, the charge and discharge process of described capacitor C1, C2 is separate.
4. Modularized multi-level converter sub-module circuit according to claim 1, is characterized in that, described capacitor C1, C2 are direct current capacitor, and described diode D1, D2, D3, D4, D5, D6 are fly-wheel diode.
5. a Modularized multi-level converter sub-module circuit, is characterized in that, comprising:
Capacitor C1, C2, semiconductor switch T1, T2, T3, T4, T5, diode D1, D2, D3, D4, D5, D6;
The collector electrode of described semiconductor switch T1, T2, T3, T4, T5 is connected with the negative electrode of diode D1, D2, D3, D4, D5 respectively, and the emitter of described semiconductor switch T1, T2, T3, T4, T5 is connected with the anode of diode D1, D2, D3, D4, D5 respectively; The collector electrode of semiconductor switch T1 is connected with the anode of diode D6, and as the negative pole end of submodule, the emitter of semiconductor switch T3 is connected with the collector electrode of semiconductor switch T5, as the positive terminal of submodule; The negative pole end of capacitor C1 is connected with the emitter of the emitter of semiconductor switch T5, semiconductor switch T4 and the positive terminal of capacitor C2; The positive terminal of capacitor C1 is connected with the negative electrode of the collector electrode of semiconductor switch T3 and diode D6; The negative pole end of capacitor C2 is connected with the emitter of semiconductor switch T2; The collector electrode of semiconductor switch T2 is connected with the collection emitter of the emitter of semiconductor switch T4 and semiconductor switch T1;
When there is direct-current short circuit fault, semiconductor switch T1, T2, T3, T4, T5 turn off, and diode D1, D2, D3, D4, D5, D6 carry out one-way conduction to electric current, and fault current is by capacitor C1, C2.
6. Modularized multi-level converter sub-module circuit according to claim 5, is characterized in that, described semiconductor switch T1, T2, T3, T4, T5's is withstand voltage all identical.
7. Modularized multi-level converter sub-module circuit according to claim 5, is characterized in that, the charge and discharge process of described capacitor C1, C2 is separate.
8. Modularized multi-level converter sub-module circuit according to claim 5, is characterized in that, described capacitor C1, C2 are direct current capacitor, and described diode D1, D2, D3, D4, D5, D6 are fly-wheel diode.
9. a Modularized multi-level converter sub-module circuit, comprise the first submodule and the second submodule, it is characterized in that, described first submodule comprises the Modularized multi-level converter sub-module circuit described in claim 1-4 any one, described second submodule comprises the Modularized multi-level converter sub-module circuit described in claim 5-8 any one, and the positive terminal of described first submodule is connected with the negative pole end of described second submodule.
10. a Modularized multi-level converter sub-module circuit, comprise the first submodule and the second submodule, it is characterized in that, described first submodule and the second submodule include the Modularized multi-level converter sub-module circuit described in claim 1-4 any one, and the positive terminal of described first submodule is connected with the negative pole end of the second submodule.
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| CN108023494A (en) * | 2016-11-02 | 2018-05-11 | 中国电力科学研究院 | A kind of modularization multi-level converter and its sub-modular structure |
| CN108023494B (en) * | 2016-11-02 | 2021-03-12 | 中国电力科学研究院 | Modular multilevel converter and submodule structure thereof |
| US11632059B1 (en) | 2019-07-23 | 2023-04-18 | Yangzhou Power Supply Branch Of State Grid Jiangsu Electric Power Co., Ltd. | Submodule topology circuit for modular multilevel converter and method for controlling same |
| CN112953277A (en) * | 2021-03-10 | 2021-06-11 | 昆明理工大学 | Five level of modularization many level transverter MMC presss from both sides submodule topological structure |
| CN112953277B (en) * | 2021-03-10 | 2023-10-31 | 昆明理工大学 | Five-level clamping submodule topological structure of modular multilevel converter MMC |
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