CN113252187A - Thermopile chip, thermopile infrared sensor and temperature measurement gun - Google Patents
Thermopile chip, thermopile infrared sensor and temperature measurement gun Download PDFInfo
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- CN113252187A CN113252187A CN202110604685.0A CN202110604685A CN113252187A CN 113252187 A CN113252187 A CN 113252187A CN 202110604685 A CN202110604685 A CN 202110604685A CN 113252187 A CN113252187 A CN 113252187A
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- G—PHYSICS
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
- G01J5/14—Electrical features thereof
- G01J5/16—Arrangements with respect to the cold junction; Compensating influence of ambient temperature or other variables
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
- G01J2005/123—Thermoelectric array
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Abstract
The invention discloses a thermopile chip, a thermopile infrared sensor and a temperature measuring gun, and relates to the technical field of infrared detection, so that the thermopile chip can resist thermal shock, and the temperature measuring accuracy of the thermopile chip is improved under the condition of improving the accuracy of a thermoelectromotive force signal output by the thermopile chip. The thermopile chip includes: a first thermopile chip section, a second thermopile chip section, and a reflective layer. The second thermopile chip portion is in series with the first thermopile chip portion. The second thermopile chip part is used for counteracting a thermal shock signal generated by the first thermopile chip part when the thermopile chip is in an operating state. The reflective layer is disposed on the second thermopile chip portion. The reflective layer is used for reflecting infrared rays radiated to the second thermopile chip part. The thermopile infrared sensor comprises a packaging shell and the thermopile chip. The thermopile chip is applied to the temperature measuring gun.
Description
Technical Field
The invention relates to the technical field of infrared detection, in particular to a thermopile chip, a thermopile infrared sensor and a temperature measuring gun.
Background
The seebeck effect refers to a thermoelectric phenomenon in which a voltage difference between two substances is caused due to a difference in temperature between two different conductors or semiconductors. The thermopile chip is a chip for measuring the temperature of an object to be measured based on the seebeck effect.
However, in practical applications, when the thermopile chip is subjected to thermal shock such as ambient temperature, an output jump occurs in the output voltage of the thermopile component in the thermopile chip, and then the accuracy of the thermoelectromotive force signal output by the thermopile chip is reduced, which finally results in that the detection temperature of the object to be measured converted based on the thermoelectromotive force signal does not match the actual temperature, so that the temperature measurement accuracy of the thermopile chip is low.
Disclosure of Invention
The invention aims to provide a thermopile chip, a thermopile infrared sensor and a temperature measuring gun, so that the thermopile chip can resist thermal shock, and the temperature measuring precision of the thermopile chip is improved under the condition of improving the accuracy of a thermoelectromotive force signal output by the thermopile chip.
In order to achieve the above object, the present invention provides a thermopile chip including: a first thermopile chip section;
a second thermopile chip part in series with the first thermopile chip part; the second thermopile chip part is used for counteracting a thermal shock signal generated by the first thermopile chip part when the thermopile chip is in a working state;
and a reflective layer disposed on the second thermopile chip portion; the reflective layer is used for reflecting infrared rays radiated to the second thermopile chip part.
Compared with the prior art, in the thermopile chip provided by the invention, the first thermopile chip part and the second thermopile chip part are connected in series. And the second thermopile chip part can counteract the thermal shock signal generated by the first thermopile chip part when the thermopile chip is in an operating state. Meanwhile, a reflective layer is arranged on the second thermopile chip part. The reflective layer may reflect infrared rays radiated to the second thermopile chip part. Therefore, when the thermopile chip provided by the invention is in a working state, the first thermopile chip part can detect infrared energy radiated by the object to be detected and output a thermoelectromotive force signal for representing the temperature of the object to be detected. And the second thermopile chip part is provided with a reflecting layer, so that the infrared energy radiated by the object to be detected cannot be detected, and the normal temperature measuring process cannot be influenced. And, because of the thermopile chip is receiving the thermal shock after, no matter be first thermopile chip portion, still second thermopile chip portion, the influence that the temperature of the two all can receive the thermal shock takes place the rapid change, except that first thermopile chip portion can export the thermoelectromotive force signal of normal temperature measurement this moment promptly, first thermopile chip portion and second thermopile chip portion still all can produce the thermal shock signal. Meanwhile, because the second thermopile chip part is connected with the first thermopile chip part in series, the generated thermal shock signal can counteract the thermal shock signal generated by the first thermopile chip part when the thermopile chip is in a working state. That is to say, no matter the thermopile chip is in normal temperature measurement state or is in abnormal state after receiving the thermal shock in the course of the work, the signal of its output is only for the thermoelectromotive force signal that is used for the representation await measuring object temperature to make the thermopile chip can resist the thermal shock, under the condition of the thermoelectromotive force signal accuracy of improving the thermopile chip output, can improve its temperature measurement precision.
The invention also provides a thermopile infrared sensor, which comprises a packaging shell and the thermopile chip provided by the technical scheme; an infrared light-transmitting window is formed in the packaging shell; the thermopile chip is disposed within the package housing.
Compared with the prior art, the beneficial effects of the thermopile infrared sensor provided by the invention are the same as those of the thermoelectric core piece provided by the technical scheme, and the description is omitted here.
The invention also provides a temperature measuring gun which comprises the thermopile chip or the thermopile infrared sensor provided by the technical scheme.
Compared with the prior art, the temperature measuring gun provided by the invention has the same beneficial effects as the thermoelectric core piece provided by the technical scheme, and the detailed description is omitted.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic cross-sectional view of a first structure of a thermopile chip according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a second structure of a thermopile chip according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of a third structure of a thermopile chip according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a connection between a first thermopile chip segment and a second thermopile chip segment provided in accordance with an embodiment of the present invention;
FIG. 5 is a schematic diagram illustrating a connection relationship between a plurality of thermocouples according to an embodiment of the present invention;
FIG. 6 is a schematic cross-sectional view of a first structure of a thermopile infrared sensor according to an embodiment of the present invention;
FIG. 7 is a schematic cross-sectional view of a second structure of a thermopile infrared sensor according to an embodiment of the present invention;
FIG. 8 is a schematic cross-sectional view of a third structure of a thermopile infrared sensor provided in accordance with an embodiment of the present invention;
fig. 9 is a schematic cross-sectional view of a fourth structure of a thermopile infrared sensor according to an embodiment of the present invention.
Reference numerals:
1 is a first thermopile chip part, 11 is a thermopile assembly, 111 is a cold end,
112 is a hot end, 113 is a thermocouple, 1131 is a first thermocouple segment,
1132, a second thermocouple segment, 12, a thermopile electrode, 121, a negative electrode portion,
122 is a positive electrode part, 13 is a substrate, 131 is an air cavity,
132 is a first region, 133 is a second region, 14 is an infrared absorbing layer,
2 is a second thermopile chip part,
3 is a reflection layer, and the reflection layer,
4 is a supporting structure, and the supporting structure is,
5 is a first infrared transmission cover body,
the reference numeral 7 denotes a first cavity which,
the number 8 is the number of the second cavity,
9 is an infrared anti-reflection layer, 9,
10 is a packaging shell, 101 is an infrared light-transmitting window, and 102 is an infrared filter.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed. In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise. The meaning of "a number" is one or more unless specifically limited otherwise.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
The seebeck effect refers to a thermoelectric phenomenon in which a voltage difference between two substances is caused due to a difference in temperature between two different conductors or semiconductors. The thermopile chip is a chip for measuring the temperature of an object to be measured based on the seebeck effect.
Specifically, when the thermopile chip is in the working process, and when the distance between the thermopile chip and the object to be detected meets the requirement of detection distance, the infrared energy radiated by the object to be detected can be utilized by the infrared absorption layer of the thermopile chip and is converted into heat energy. And the thermoelectric core sheet has the hot end of the thermoelectric stack assembly located on the infrared absorbing layer. And after the hot end absorbs the heat energy converted by the infrared absorption layer, a temperature difference exists between the hot end and the cold end of the thermoelectric stack assembly. According to the Seebeck effect, when a temperature difference exists between the hot end and the cold end of the thermopile assembly, a temperature difference electromotive force can be generated between the hot end and the cold end of the thermopile assembly, so that a temperature signal can be converted into a thermoelectromotive force signal. The thermoelectromotive force signal output by the thermopile chip can be converted into the temperature of the object to be measured through instruments such as an electric instrument and the like, so that the temperature of the object to be measured is measured.
However, after the existing thermopile chip is subjected to environmental temperature thermal shock (that is, the thermopile chip generates a large amount of heat exchanges in a short time, and the temperature changes violently), the temperature of the thermopile chip is affected by the external temperature thermal shock to change rapidly, so that thermal unbalance occurs between the hot end and the cold end of the thermopile component in the thermopile chip, output jump occurs in the output voltage of the thermopile chip, accuracy of a thermoelectromotive force signal output by the thermopile chip is reduced, and finally, the detection temperature of an object to be detected converted based on the thermoelectromotive force signal is inconsistent with the actual temperature. That is, the measurement accuracy of the thermopile chip is low.
In order to solve the technical problem, the embodiment of the invention provides a thermopile chip, a thermopile infrared sensor and a temperature measuring gun. In the thermopile chip provided by the embodiment of the invention, the first thermopile chip part and the second thermopile chip part are connected in series. The second thermopile chip part is capable of canceling a thermal shock signal generated by the first thermopile chip part when the thermopile chip is in an operating state. And, a reflective layer is provided on the second thermopile chip part, which may serve to reflect infrared rays radiated to the second thermopile chip part. That is to say, no matter the thermopile chip is in normal temperature measurement state or is in abnormal state after receiving the thermal shock in the course of the work, the signal of its output is only for the thermoelectromotive force signal that is used for the representation await measuring object temperature to make the thermopile chip can resist the thermal shock, under the condition of the thermoelectromotive force signal accuracy of improving the thermopile chip output, improve its temperature measurement precision.
As shown in fig. 1 to 3, an embodiment of the present invention provides a thermopile chip including: a first thermopile chip part 1, a second thermopile chip part 2, and a reflective layer 3. The second thermopile chip part 2 is connected in series to the first thermopile chip part 1. The second thermopile chip part 2 serves to cancel a thermal shock signal generated from the first thermopile chip part 1 when the thermopile chip is in an operating state. The reflective layer 3 is provided on the second thermopile chip part 2. The reflective layer 3 serves to reflect infrared rays radiated to the second thermopile chip part 2.
Specifically, the material of the reflective layer may be any material capable of reflecting infrared rays, as long as the material can be applied to the thermopile chip provided by the embodiment of the present invention. For example: the reflective layer may be made of metal material such as gold and aluminum. At this time, the reflective layer is a metal reflective layer. It is understood that the metal material has a high reflectivity to infrared rays. Based on this, as shown in fig. 1 to 3, when the reflective layer 3 is a metal reflective layer, the reflective layer 3 can ensure that the infrared rays radiated to the second thermopile chip part 2 can be totally reflected, so that the second thermopile chip part 2 can only generate thermal shock signals when the thermopile chip is in a working state, and the normal temperature measurement signals generated by the first thermopile chip part 1 cannot be influenced, thereby further improving the temperature measurement accuracy of the thermopile chip.
In addition, the thickness of the above-mentioned reflection layer and the specific setting position of the reflection layer on the second thermopile chip part may be set according to actual requirements as long as infrared rays radiated to the second thermopile chip part can be reflected.
The first and second thermopile chip parts may be integrally or separately provided. As shown in fig. 1 to 3, when the first thermopile chip part 1 and the second thermopile chip part 2 are integrally provided, in manufacturing some structures (for example, the infrared absorption layer 14) in the first thermopile chip part 1, the manufacturing of the corresponding structures in the second thermopile chip part 2 may be completed, so that the manufacturing efficiency of the thermopile chip may be improved.
In an actual application process, as shown in fig. 1 to 3, when the thermopile chip according to the embodiment of the present invention is used to measure a temperature of an object to be measured, since the reflective layer 3 capable of reflecting infrared rays is disposed on the second thermopile chip portion 2, the first thermopile chip portion 1 can detect infrared energy radiated by the object to be measured and output a thermal electromotive force signal for representing the temperature of the object to be measured. And the second thermopile chip part 2 can not detect the infrared energy radiated by the object to be measured, so even if the second thermopile chip part 2 is connected with the first thermopile chip part 1 in series, the second thermopile chip part 2 can not influence the normal temperature measuring process. And, because of the thermopile chip is receiving the thermal shock after, no matter be first thermopile chip portion 1, still second thermopile chip portion 2, the influence that the temperature of the two all can receive the thermal shock takes place the rapid change, except that first thermopile chip portion 1 can export the thermoelectromotive force signal of normal temperature measurement this moment promptly, first thermopile chip portion 1 and second thermopile chip portion 2 still all can produce the thermal shock signal. Meanwhile, because the second thermopile chip part 2 is connected with the first thermopile chip part 1 in series, a thermal shock signal generated by the second thermopile chip part can offset the thermal shock signal generated by the first thermopile chip part 1 when the thermopile chip is in a working state, so that the signal output by the thermopile chip in working is a thermal electromotive force signal used for representing the temperature of an object to be measured.
It can be seen from the above that, in the working process of the thermopile chip provided in the embodiment of the present invention, no matter the thermopile chip is in a normal temperature measurement state or in an abnormal state after being subjected to thermal shock, the output signal is only a thermoelectromotive force signal for representing the temperature of the object to be measured, so that the thermopile chip can resist the thermal shock, and the temperature measurement accuracy can be improved under the condition of improving the accuracy of the thermoelectromotive force signal output by the thermopile chip.
In one example, as shown in fig. 1, the above-described reflective layer 3 may be coated on the second thermopile chip part 2. It should be understood that the above-mentioned covering of the reflective layer 3 on the second thermopile chip part 2 means that the reflective layer 3 is directly formed on the surface of the second thermopile chip part 2. At this moment, the reflecting layer 3 directly contacts with the second thermopile chip part 2, and the reflecting layer 3 can reflect at least the infrared rays radiated to the second thermopile chip part 2 from the top and the side part, thereby ensuring that the second thermopile chip part 2 cannot detect the infrared rays radiated by the object to be detected when the thermopile chip is in a working state, preventing the detection signal output by the second thermopile chip part 2 from influencing the normal temperature measurement signal generated by the first thermopile chip part 1, and further improving the temperature measurement precision of the thermopile chip.
In another example, as shown in fig. 2, the above-described thermopile chip may further include at least two support structures 4 disposed at intervals on the second thermopile chip part 2. The reflective layer 3 is suspended over the second thermopile chip part 2 by at least two support structures 4.
Specifically, the number and specification of the supporting structures and the distribution positions of the supporting structures on the second thermopile chip part may be set according to the specification parameters and actual requirements of the reflective layer. For example: when the reflective layer 3 is a rectangular reflective layer, the thermopile chip may comprise only two support structures 4 arranged spaced apart on the second thermopile chip part 2, as shown in fig. 2. Also, the cross-sectional shapes of the two support structures 4 may be rectangular parallelepipeds or the like. Another example is: when the reflection layer is a circular reflection layer, the thermopile chip may include at least three support structures disposed at intervals and annularly distributed on the second thermopile chip part. And, the cross-sectional shapes of the at least three support structures may all be arcs of equal radian.
In addition, the material of the support structure may be set according to actual requirements, as long as the support structure can be applied to the thermopile chip provided by the embodiment of the invention. For example: the material of the support structure may be a semiconductor material such as silicon. The material may be a metal material having an infrared ray reflecting function such as gold or aluminum. It can be understood that, when bearing structure's material was for having the metal material of reflection infrared ray function, bearing structure can reflect the infrared ray of radiating to second thermopile chip portion from the side of second thermopile chip portion, ensures that second thermopile chip portion can only produce thermal shock signal when the thermopile chip is in operating condition, and can not lead to the fact the influence to the normal temperature measurement signal that first thermopile chip portion produced, further improves the temperature measurement precision of thermopile chip.
In practical applications, in the case where the reflective layer is a film layer suspended on the second thermopile chip portion by the supporting structure, a sacrificial layer may be formed in advance in the hollowed-out region before the reflective layer is formed. Therefore, after the reflecting layer is formed, the reflecting layer suspended on the second thermopile chip part can be obtained by selectively removing the sacrificial layer. The thickness of the sacrificial layer (i.e., the height of the hollow area) may be set according to actual requirements, and is not specifically limited herein. The material of sacrificial layer all has certain sculpture selectivity with the material of bearing structure, reflection stratum and second thermopile chip portion to ensure that the in-process of sacrificial layer is got rid of in the selectivity, can not cause the damage to other structures, improve the yield of thermopile chip.
In yet another example, as shown in fig. 3, the above-described thermopile chip may further include a first infrared-transmissive cover 5 disposed on the first thermopile chip part 1, and a second infrared-transmissive cover 6 disposed on the second thermopile chip part 2. Wherein, the inner side surface of the first infrared transmission cover body 5 and the upper surface of the first thermopile chip part 1 enclose a first cavity 7. The inner side surface of the second infrared transmission cover body 6 and the upper surface of the second thermopile chip part 2 enclose a second cavity 8. The reflective layer 3 is arranged on top of the second infrared-transmissive cover 6.
Specifically, the shape and size of the first infrared transmission cover and the second infrared transmission cover may be set according to the cross-sectional shape and size of the first thermopile chip part and the second thermopile chip part, respectively, and a practical application scenario. For example: as shown in fig. 3, when the first and second thermopile chip parts 1 and 2 have a rectangular cross section, the first and second infrared transmission covers 5 and 6 may have a shape of a hollow cube, a hollow cuboid, a hollow cylinder, or the like with one side opened. The first infrared transmitting cover 5 and the second infrared transmitting cover 6 may be made of materials that can transmit infrared rays, such as silicon, glass materials, or ceramic materials.
In addition, the first infrared transmission cover body and the second infrared transmission cover body may be connected to the first thermopile chip part and the second thermopile chip part, respectively, by means of bonding, screws, or the like. When the first infrared transmission cover body and the second infrared transmission cover body are made of silicon, the first infrared transmission cover body and the second infrared transmission cover body can be further connected with the first thermopile chip part and the second thermopile chip part respectively in a bonding mode. At this time, stronger connecting force is provided between the first infrared transmission cover body and the first thermopile chip part and between the second infrared transmission cover body and the second thermopile chip part, so that the structural stability of the thermopile chip can be improved.
Moreover, the first infrared transmission cover body and the second infrared transmission cover body can be arranged in a split mode or in an integrated mode. Specifically, the arrangement of the first infrared transmission cover and the second infrared transmission cover may be set according to the arrangement of the first thermopile chip part and the second thermopile chip part. For example: when the first thermopile chip part and the second thermopile chip part are arranged separately and the distance between the first thermopile chip part and the second thermopile chip part is far away, the first infrared transmission cover body and the second infrared transmission cover body can be arranged separately. Another example is: as shown in fig. 3, when the first and second thermopile chip parts 2 are separately disposed and closely spaced, or when the first and second thermopile chip parts 2 are integrally disposed, the first and second infrared transmission covers 5 and 6 may be integrally disposed, so that when some structures (e.g., the first cavity 7) in the first thermopile chip part are fabricated, fabrication of the corresponding structures (e.g., the second cavity 8) in the second thermopile chip part 2 may be completed, and thus, the fabrication efficiency of the thermopile chip may be improved. The sizes of the first cavity 7 and the second cavity 8 can be set according to actual requirements, and are not particularly limited herein.
Illustratively, as shown in fig. 3, the thermopile chip further includes an infrared antireflection layer 9. The infrared reflection reducing layer 9 is arranged on the top of the first infrared transmission cover body 5. It will be appreciated that the infrared anti-reflection layer 9 may increase the transmittance in the infrared band and may also filter out unwanted bands (e.g., visible light). Therefore, the infrared reflection reducing layer 9 arranged on the top of the first infrared transmission cover body 5 can enable more infrared rays radiated by the object to be measured to penetrate through the top of the first infrared transmission cover body 5 and be transmitted to the first thermopile chip part 1, so that the signal response generated by the first thermopile chip part 1 can be enhanced, and the sensitivity of the first thermopile chip part 1 is improved. Specifically, the thickness of the infrared antireflection layer 9 may be set according to actual requirements. The infrared anti-reflection layer 9 can be made of diamond, zinc sulfide, magnesium fluoride and the like.
In one example, as shown in fig. 1-3, the above-described thermopile chip may include one or more first thermopile chip parts 1. Wherein, when the number of the first thermopile chip parts 1 is plural, the plural first thermopile chip parts 1 are connected in parallel. It is to be understood that in case of a thermopile chip comprising a plurality of parallel first thermopile chip parts 1, the plurality of first thermopile chip parts 1 are connected in parallel and then in series with the second thermopile chip part 2.
It is worth noting that compared with the thermopile chip only comprising one first thermopile chip part, when the thermopile chip comprises a plurality of parallel first thermopile chip parts, the temperature of the thermopile chip, which cannot normally detect the object to be detected due to the damage of one first thermopile chip part, can be prevented, and the working stability of the thermopile chip is improved.
In one example, as shown in fig. 1-3, the above-described thermopile chip may include one or more second thermopile chip parts 2. Wherein, when the number of the second thermopile chip parts 2 is plural, the plural second thermopile chip parts 2 are connected in parallel. It is to be understood that in case the thermopile chip comprises a plurality of parallel second thermopile chip parts 2, the first thermopile chip part 1 is in series with the plurality of parallel second thermopile chip parts 2.
It is worth noting that only includes a second thermopile chip portion with the thermopile chip and compares, when the thermopile chip includes a plurality of parallelly connected second thermopile chip portions, can receive the thermal shock back at the thermopile chip, prevent to lead to because of wherein certain second thermopile chip portion damages, the thermal shock signal that first thermopile chip portion produced can't normally be offset to second thermopile chip portion, improve the operational reliability of thermopile chip and the degree of accuracy of temperature measurement, further promote the ability that the thermopile chip resisted the thermal shock.
In one example, as shown in fig. 1-4, the first and second thermopile chip parts 1 and 2 described above each include a thermopile assembly 11, and a thermopile electrode 12 in series with the thermopile assembly 11. The thermopile element 11 included in the first thermopile chip part 1 is arranged symmetrically to the thermopile element 11 included in the second thermopile chip part 2. The negative electrode portion 121 of the thermopile electrode 12 included in the first thermopile chip portion 1 is electrically connected to the negative electrode portion 121 of the thermopile electrode 12 included in the second thermopile chip portion 2.
It should be understood that, as shown in fig. 4, when the thermopile assembly 11 included in the first thermopile chip part 1 and the thermopile assembly 11 included in the second thermopile chip part 2 are symmetrically arranged, they have good symmetry, which is beneficial for generating thermal shock signals with the same size after the two thermopile assemblies 11 are subjected to thermal shock. Meanwhile, under the condition that the negative electrode part 121 of the thermopile electrode 12 included in the first thermopile chip part 1 is electrically connected with the negative electrode part 121 of the thermopile electrode 12 included in the second thermopile chip part 2, the thermal shock signal generated by the thermopile component 11 included in the first thermopile chip part 1 can completely cancel the thermal shock signal generated by the thermopile component 11 included in the second thermopile chip part 2, and the effect of the thermopile chip on resisting the thermal shock of the environment temperature is further improved.
Specifically, the symmetrical arrangement of the thermopile assembly included in the first thermopile chip part and the thermopile assembly included in the second thermopile chip part mainly includes: the sizes, the compositions and the distribution modes of all structures of the thermopile assembly included in the first thermopile chip part and all structures of the thermopile assembly included in the second thermopile chip part are consistent, and the connection positions of the two structures are symmetrically arranged. For example: as shown in fig. 4 and 5, in the case where the thermopile assembly 11 included in each of the first and second thermopile chip parts 1 and 2 includes a plurality of thermocouples 113, the number, size, and distribution of the plurality of thermocouples 113 included in the first thermopile chip part 1 are the same as those of the plurality of thermocouples 113 included in the second thermopile chip part 2, respectively. The connection positions of the plurality of thermocouples 113 included in the first thermopile chip unit 1 are provided symmetrically to the connection positions of the plurality of thermocouples 113 included in the second thermopile chip unit 2.
Further, as shown in fig. 1 to 4, the positive electrode portion 122 of the thermopile electrode 12 included in the first thermopile chip portion 1 may be a positive electrode of the thermopile chip. The positive electrode portion 122 of the thermopile electrode 12 included in the second thermopile chip portion 2 may be a negative electrode of the thermopile chip.
Illustratively, as shown in fig. 1 to 4, each of the first and second thermopile chip parts 1 and 2 further includes: a substrate 13 and an infrared absorbing layer 14. An air cavity 131 is formed in the substrate 13 and penetrates through the substrate 13. An infrared absorbing layer 14 covers the air cavity 131. The infrared absorption layer 14 included in the first thermopile chip part 1 is provided symmetrically to the infrared absorption layer 14 included in the second thermopile chip part 2. The thermopile assembly 11 has a cold end 111, and a hot end 112 connected to the cold end 111. The cold end 111 is located on the substrate 13. Hot end 112 is located on infrared absorbing layer 14. The thermopile electrode 12 is located on a substrate 13.
It should be understood that, as shown in fig. 4, when the infrared absorption layer 14 included in the first thermopile chip part 1 and the infrared absorption layer 14 included in the second thermopile chip part 2 are symmetrically disposed, it is advantageous that the thermal energy converted by the infrared absorption layers 14 included in the first thermopile chip part 1 and the second thermopile chip part 2 is equal after the thermal shock is applied to the two layers. Based on this, the hot end 112 of the thermopile assembly 11 included in the first thermopile chip part 1 and the second thermopile chip part 2 can detect equal heat, thereby facilitating the two thermopile assemblies 11 to generate thermal shock signals with the same size after being subjected to thermal shock.
Specifically, as shown in fig. 1 to 3, the base 13 may be a semiconductor substrate such as a silicon substrate or a silicon-on-insulator substrate. The size of the air cavity 131 formed in the substrate 13 may be set according to the size of the infrared absorption layer 14. For example: the radial dimension of the air cavity 131 may be equal to or slightly less than the radial dimension of the infrared absorbing layer 14. The infrared absorption layer 14 converts infrared energy radiated by an object to be measured into heat energy and transfers the heat energy to the hot end 112 of the thermopile assembly 11, so that a temperature difference exists between the hot end 112 and the cold end 111 of the thermopile assembly 11, and a thermoelectromotive force is generated. Based on this, the air cavity 131 is formed in the portion of the substrate 13 below the infrared absorption layer 14, so that the influence of the heat converted by the infrared absorption layer 14 on the cold end 111 of the thermopile assembly 11 can be reduced, and the accuracy of temperature measurement of the thermopile chip can be improved.
For the infrared absorption layer, the material of the infrared absorption layer may be black carbon, silicon dioxide, silicon nitride, or the like. The infrared absorbing layer may have a single-layer structure or a multilayer structure. When the infrared absorbing layer has a single-layer structure, the infrared absorbing layer may be a silicon oxide layer, a silicon nitride layer, or the like. When the infrared absorbing layer has a multilayer structure, the infrared absorbing layer may be a laminate composed of a silicon oxide layer/a silicon nitride layer/a silicon oxide layer, or the like.
For example, as shown in fig. 1 to 3, when the first and second thermopile chip parts 1 and 2 are integrally provided, the first and second thermopile chip parts 1 and 2 may share the same substrate 13 and the same infrared absorption layer 14. The substrate 13 has a first region 132 and a second region 133 disposed at intervals. The first region 132 and the second region 133 are respectively opened with an air cavity 131. The infrared absorbing layer 14 covers the air cavity 131 in the first region 132 and the second region 133. In this case, when some structures (e.g., the air cavity 131 and the infrared absorption layer 14) in the first thermopile chip part 1 are manufactured, the manufacture of the corresponding structures in the second thermopile chip part 2 may also be completed, so that the manufacturing efficiency of the thermopile chip may be improved. The distribution positions of the first region 132 and the second region 133 on the substrate 13 can be set according to the corresponding parameters of the first thermopile chip part 1 and the second thermopile chip part 2 formed based on the two regions, which is not limited herein.
In one example, as shown in fig. 4 and 5, the thermopile assembly 11 may include a plurality of thermocouples 113 connected in series. Wherein each thermocouple 113 includes a first thermocouple segment 1131, and a second thermocouple segment 1132 electrically connected to the first thermocouple segment 1131. The first and second thermocouple segments 1131 and 1132 are symmetrically disposed. It should be appreciated that when the first thermocouple segment 1131 and the second thermocouple segment 1132 are symmetrically disposed, the structure of the thermocouple 113 is more regular, which is beneficial to disposing more thermocouples 113 on the substrate and the infrared absorption layer under the condition that the cross-sectional areas of the substrate and the infrared absorption layer are limited, so as to improve the temperature measurement range of the thermopile chip.
Specifically, the number of thermocouples included in the thermopile assembly, and the specifications and materials of the first thermocouple segment and the second thermocouple segment may be set according to actual requirements. For example: as shown in fig. 5, the first thermocouple segment 1131 and the second thermocouple segment 1132 may be elongated structures. The first and second thermocouple segments 1131 and 1132 may be fabricated from polysilicon doped with N-type or P-type impurities, respectively. In addition, taking the first ends of the first thermocouple segment 1131 and the second thermocouple segment 1132 as a hot junction part and the second ends as a cold junction part as an example, the plurality of thermocouples 113 may be connected in series such that the first end of the first thermocouple segment 1131 included in the same thermocouple 113 is electrically connected to the first end of the second thermocouple segment 1132. Also, the second ends of the first and second thermocouple segments 1131 and 1132 included in the thermocouple 113 are electrically connected to the second ends of the first and second thermocouple segments 1131 and 1132 included in the two thermocouples 113 connected to the thermocouple 113, respectively.
In one example, as shown in fig. 4 and 5, the thermopile assembly 11 may include at least two thermocouple groups distributed in a central symmetry. Each group of thermocouples includes at least three thermocouples 113.
Specifically, the number of groups of thermocouple groups included in the thermopile assembly may be set according to actual requirements. For example: the thermopile assembly may include only two sets of thermocouple groups. Another example is: the thermopile assembly may include four sets of thermocouples. In addition, the number of thermocouples included in each thermocouple group and the specification of different thermocouples in each group can be set according to the number of thermocouple groups and actual requirements.
For example, as shown in fig. 4 and 5, the length of the thermocouples 113 included in each group of thermocouple groups may gradually decrease along the center-to-both side direction of each group of thermocouple groups.
Specifically, as shown in fig. 4 and 5, the length of the thermocouples 113 included in each thermocouple group may be gradually decreased according to the formation of the infrared absorption layer 14 and the number of the thermocouple groups, so that the at least two thermocouple groups included in the thermopile assembly 11 can make full use of the heat energy generated on the infrared absorption layer 14. In addition, the reduction degree of the length of the thermocouples 113 included in different thermocouple groups may be the same or different.
For example: when the infrared absorption layer has a square cross-section and the thermopile assembly includes four thermocouple groups, the length of the thermocouples included in each thermocouple group may be linearly decreased. And the length of each group of thermocouples is reduced to the same extent.
Another example is: when the infrared absorption layer has a rectangular cross section and the thermopile assembly includes four thermocouple groups, the degree of reduction in length of each thermocouple group may be different.
For another example: when the cross section of the infrared absorption layer is circular, the length of one end where the hot junction part of each group of thermocouples is located is reduced in a linear mode, and the length of one end where the cold junction part is located is reduced in a fan mode.
Illustratively, the length of the different thermocouples included in each thermocouple group may also be the same. Based on this, when the thermopile assembly includes two groups of thermocouples, the hot junction portions of the plurality of thermocouples included in the two groups of thermocouples can be distributed on the infrared absorption layer in order, and the heat energy converted by the infrared absorption layer is fully utilized.
As shown in fig. 6 to 9, an embodiment of the present invention further provides a thermopile infrared sensor. This thermopile infrared sensor includes: the package body 10 and the thermopile chip provided by the above embodiments. Wherein, the package housing 10 is provided with an infrared light-transmitting window 101. The thermopile chip described above is disposed within the package case 10.
Specifically, the shape and size of the package housing can be set according to actual requirements. For example: the packaging shell can be in the shape of a hollow cylinder and the like. The packaging shell can be made of high-thermal-conductivity materials such as copper, aluminum and gold, so that infrared energy radiated by an object to be tested can be transmitted to the first thermopile chip part, the temperature of the object to be tested can be measured by the first thermopile chip part, and the sensitivity of the thermopile infrared sensor is improved. As shown in fig. 6 to 9, the position, specification, and number of the infrared transmission windows 101 formed in the package case 10 affect whether or not each region inside the package case 10 can transmit infrared energy radiated from the object to be measured, and further affect the distribution position and the number of the first thermopile chip parts 1 in the package case 10. Based on this, can set up infrared light-transmitting window 101 according to above-mentioned influence factor and actual demand to ensure that every first thermopile chip portion 1 that the thermopile chip includes all can carry out temperature measurement to the determinand, improve the temperature measurement precision. For example: when the number of the first thermopile chip parts 1 is one, only one infrared light-transmitting window 101 may be formed on the package case 10. Another example is: when the number of first thermopile chip parts is a plurality of, can be provided with the infrared light transmission window that the number is the same with first thermopile chip part number on the encapsulation casing, and radial dimension and the radial dimension assorted of single first thermopile chip part. The packaging shell can be provided with only one infrared light-transmitting window, and the radial dimension of the infrared light-transmitting window is larger than or equal to the total radial dimension of the plurality of first thermopile chip parts.
It should be noted that, as shown in fig. 6 and 8, the second thermopile chip part 2 may be located in an area not covered with the infrared light-transmitting window 101 regardless of the number of the infrared light-transmitting windows 101. Alternatively, as shown in fig. 7 and 9, the second thermopile chip part 2 may be located in an area covered by the infrared light-transmitting window 101. It can be understood that, when the second thermopile chip part 2 is not located in the area covered by the infrared light-transmitting window 101, besides the reflective layer, the package housing 10 can also block part of infrared rays radiated to the second thermopile chip part 2 by the object to be measured, so as to ensure that the second thermopile chip part 2 can only generate thermal shock signals when the thermopile chip is in a working state, and the normal temperature measurement signals generated by the first thermopile chip part 1 cannot be affected, thereby further improving the temperature measurement accuracy of the thermopile chip.
In one example, as shown in fig. 6 to 9, the thermopile infrared sensor may further include an infrared filter 102 covering the infrared light-transmitting window 101.
Specifically, as shown in fig. 1 to 9, the infrared filter 102 may be disposed inside the package housing 10, or may be disposed outside the package housing 10. Because the filter is an optical device used to select a desired wavelength band of radiation, it has a selective transmission to the spectrum. The infrared filter 102 can only transmit infrared rays, so that light in other wave bands can be prevented from being radiated to the infrared absorption layer 14 through the infrared transparent window 101, heat detected by the hot end 112 of the thermopile assembly 11 is only infrared energy radiated by an object to be detected, and temperature measurement accuracy of the thermopile infrared sensor can be further improved.
The embodiment of the invention also provides a temperature measuring gun which comprises the thermopile chip or the thermopile infrared sensor provided by the embodiment. Wherein, the temperature measuring gun can be an ear type temperature measuring gun, a forehead temperature measuring gun and the like.
Compared with the prior art, the temperature measuring gun provided by the embodiment of the invention has the same beneficial effects as the thermoelectric core piece provided by the embodiment, and the detailed description is omitted here.
In the above description, the technical details of patterning, etching, and the like of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, those skilled in the art can also design a method which is not exactly the same as the method described above. In addition, although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination.
The embodiments of the present disclosure have been described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the present disclosure, and such alternatives and modifications are intended to be within the scope of the present disclosure.
Claims (10)
1. A thermopile chip, comprising: a first thermopile chip section;
a second thermopile chip part in series with the first thermopile chip part; the second thermopile chip part is used for counteracting a thermal shock signal generated by the first thermopile chip part when the thermopile chip is in a working state;
and a reflective layer disposed on the second thermopile chip portion; the reflective layer is used for reflecting infrared rays radiated to the second thermopile chip part.
2. The thermopile chip of claim 1, wherein the reflective layer overlies the second thermopile chip portion; or the like, or, alternatively,
the thermopile chip further comprises at least two support structures disposed at intervals on the second thermopile chip portion; the reflecting layer is suspended on the second thermopile chip part through the at least two supporting structures.
3. The thermopile chip of claim 1, further comprising a first infrared-transmissive cover disposed on the first thermopile chip portion, and a second infrared-transmissive cover disposed on the second thermopile chip portion; wherein the content of the first and second substances,
a first cavity is defined by the inner side surface of the first infrared transmission cover body and the upper surface of the first thermopile chip part; a second cavity is defined by the inner side surface of the second infrared transmission cover body and the upper surface of the second thermopile chip part;
the reflecting layer is arranged on the top of the second infrared transmission cover body.
4. The thermopile chip of claim 3, wherein the first infrared-transmissive cover and the second infrared-transmissive cover are integrally provided; and/or the presence of a gas in the gas,
the thermopile chip further comprises an infrared anti-reflection layer; the infrared anti-reflection layer is arranged at the top of the first infrared transmission cover body.
5. The thermopile chip of claim 1, wherein the reflective layer is a metallic reflective layer; and/or the presence of a gas in the gas,
the thermopile infrared sensor comprises one or more first thermopile chip parts; wherein when the number of the first thermopile chip parts is plural, the plural first thermopile chip parts are connected in parallel; and/or the presence of a gas in the gas,
the thermopile infrared sensor comprises one or more second thermopile chip parts; wherein when the number of the second thermopile chip parts is plural, the plural second thermopile chip parts are connected in parallel.
6. The thermopile chip of any one of claims 1-5, wherein the first and second thermopile chip segments each comprise a thermopile assembly, and a thermopile electrode in series with the thermopile assembly;
the thermopile assembly included in the first thermopile chip part and the thermopile assembly included in the second thermopile chip part are symmetrically arranged; the negative electrode portion of the thermopile electrode included in the first thermopile chip portion is electrically connected to the negative electrode portion of the thermopile electrode included in the second thermopile chip portion.
7. The thermopile chip of claim 6, wherein the first and second thermopile chip parts each further comprise: a substrate and an infrared absorbing layer; an air cavity penetrating through the substrate is formed in the substrate; the infrared absorption layer covers the air cavity; the infrared absorption layer included in the first thermopile chip part and the infrared absorption layer included in the second thermopile chip part are symmetrically arranged;
the thermopile assembly is provided with a cold end and a hot end connected with the cold end; the cold end is positioned on the base; the hot end is positioned on the infrared absorption layer;
the thermopile electrode is located on the substrate.
8. The thermopile chip of claim 7, wherein the first and second thermopile chip portions are integrally provided;
the first thermopile chip part and the second thermopile chip part share the same substrate and the same infrared absorption layer;
the substrate is provided with a first area and a second area which are arranged at intervals; the first area and the second area are respectively provided with the air cavities; the infrared absorbing layer covers the air cavity in the first area and the second area.
9. A thermopile infrared sensor, comprising: a package housing, and a thermopile chip of any one of claims 1-8; wherein the content of the first and second substances,
an infrared light-transmitting window is formed in the packaging shell; the thermopile chip is disposed within the package housing.
10. A temperature measuring gun, characterized in that it comprises a thermopile chip according to any one of claims 1-8 or a thermopile infrared sensor according to claim 9.
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| CN202110604685.0A CN113252187A (en) | 2021-05-31 | 2021-05-31 | Thermopile chip, thermopile infrared sensor and temperature measurement gun |
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| CN202110604685.0A CN113252187A (en) | 2021-05-31 | 2021-05-31 | Thermopile chip, thermopile infrared sensor and temperature measurement gun |
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