CN113241531B - Tunable array integrated broadband terahertz wave-absorbing resonator based on vanadium dioxide - Google Patents
Tunable array integrated broadband terahertz wave-absorbing resonator based on vanadium dioxide Download PDFInfo
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Abstract
The invention relates to a vanadium dioxide-based tunable array integrated broadband terahertz wave-absorbing resonator which comprises a metal reflecting layer at the bottom, a middle dielectric layer, a vanadium dioxide phase change layer, a graphene adjustable conductivity layer, a top conductive electrode and a metal resonant cavity which is arranged in a periodic array from bottom to top. The metal resonant cavity enables the whole metamaterial wave-absorbing structure to generate electromagnetic resonance at a place with specific frequency by designing specific geometric parameters and structures, the wave-absorbing structure with higher modulation depth is designed by utilizing the thermotropic phase change property of vanadium dioxide and enabling optical and electrical parameters to have great changes in a semiconductor phase state and a metal phase state, the Fermi level of the wave-absorbing structure is changed by external voltage based on the adjustable conductivity property of graphene, the dielectric parameters of the wave-absorbing structure are changed, and the absorbed wavelength range is changed. The tuning characteristics of the two materials are combined, so that the broadband absorber can be actively tuned through heat/electricity, and the designed structure is compatible with the process and easy to realize.
Description
Technical Field
The invention belongs to the field of absorption of electromagnetic waves, and particularly relates to a vanadium dioxide-based tunable array integrated broadband terahertz wave-absorbing resonator.
Background
Terahertz (THz) waves are electromagnetic waves with a band frequency in the range of 0.1 to 10THz (with a wavelength of 30 to 3000 μm), coincide with millimeter waves in a long band and coincide with infrared light in a short band, and are a very important but rarely-explored partial electromagnetic spectrum. The terahertz wave has good penetrating power to a dielectric material and can be used as a means for detecting a concealed object; the typical pulse width of the terahertz pulse is in the picosecond magnitude, a terahertz time-domain spectrum with high signal-to-noise ratio can be obtained, and spectral analysis is easy to be carried out on various materials; terahertz systems are widely applied in the fields of property research of semiconductor materials and high-temperature superconducting materials, imaging examination of chemical and biological, broadband communication, microwave orientation and the like. With the wide application of terahertz waves, people pay more attention to the problem of pollution in the electromagnetic field. Therefore, the design of an electromagnetic wave-absorbing structure mainly based on various composite materials also becomes an important research direction, wave-absorbing treatment is carried out by constructing a periodic super-surface structure and utilizing impedance effect, plasmon reaction, effective medium approximation theory and the like by combining the composite characteristics of the materials, and in the metamaterial wave-absorbing structure, the effective dielectric constant and the magnetic conductivity of the periodic unit structure are independently regulated and controlled by regulating the shape and the size of the periodic unit structure so as to realize impedance matching with a free space, thereby increasing the absorption rate. When electromagnetic waves are incident to the metal structure on the upper layer of the metamaterial structure, due to specific geometric parameters and geometric structures of the metamaterial structure, electromagnetic resonance can occur at specific frequency in the whole resonance wave-absorbing structure, so that an impedance matching effect is formed, and the absorption rate of the electromagnetic waves is increased.
In the existing resonant cavity wave-absorbing structure, a plurality of resonators with different resonant frequencies are often placed in the top-layer super-surface, and a plurality of absorption peaks are combined into broadband absorption by adjusting geometrical parameters. Landy et al (N.Ilandy, S.Sajuyigbe, J.J.Mock.A Perfect mechanical Absorber [ J ]. Physical Review Letters,2008,100,207402) propose a new structure consisting of a metal resonator, a dielectric layer and a metal thin film, realizing high absorption of electromagnetic waves of a certain waveband. A single-layer THz broadband wave absorber based on vanadium dioxide regulation and control (patent number CN201921357423.3) provides a two-way arrow-shaped vanadium dioxide resonance unit with an open rectangular ring at the top, and a vanadium dioxide phase change material is used for realizing tuning of a wave absorber in a THz wave band. A broadband adjustable wave absorber (patent No. CN202010331974.3) with vanadium dioxide metamaterial loaded on a dielectric layer provides a basic unit formed by circular resonance rings with different sizes of a metal layer, the dielectric layer and vanadium dioxide, and the wave absorbing performance of the absorber in a THZ wave band is adjusted by controlling the temperature. The switching properties of the wave-absorbing structure are regulated and controlled by controlling the phase change properties of the vanadium dioxide, but due to the structural design, the preparation process is complex, the phase change temperature of the vanadium dioxide is high, the regulation and control are not easy, only the absorption rate in a narrow band can be regulated, and the tuning mode is single.
Disclosure of Invention
The invention mainly solves the problems that: the terahertz wave absorber capable of actively regulating and controlling the absorption rate of the terahertz wave band through temperature or voltage is designed, the high absorption rate of electromagnetic waves in the wave band within a certain range is achieved through designing a metamaterial perfect absorber structure, and the absorption and reflection functions of the terahertz waves are achieved. Meanwhile, the electromagnetic performance of the designed perfect absorber of the metamaterial is changed by controlling the temperature or regulating the electric conductivity by voltage, and meanwhile, the periodic structure based on the metal ring resonator is designed and integrated into the micro-nano structure, so that the metamaterial array can realize the high absorption rate of the terahertz waveband in a wide frequency range.
The technical scheme of the invention is as follows:
a tunable array integrated broadband terahertz wave-absorbing resonator based on vanadium dioxide is of a multilayer structure and comprises a metal reflecting layer at the bottom, a middle dielectric layer, a vanadium dioxide phase change layer, a graphene adjustable conductivity layer, a top conductive electrode and a metal resonant cavity which is arranged in a periodic array from bottom to top.
The thickness of the metal reflecting layer is larger than the transmission depth of terahertz, and the metal reflecting layer is made of Au or Ag.
The middle dielectric layer has the same shape and structure as the metal reflecting layer and is made of Al2O3Or SiO2And sputtering on the surface of the metal reflecting layer by a magnetic sputtering mode.
The vanadium dioxide phase change layer is consistent with the metal reflection layer in shape and structure, a heat source patch is added in the vanadium dioxide layer and is connected with an external electric heating source, the temperature change of the vanadium dioxide phase change layer is controlled through the heat source patch, and the phase change of the vanadium dioxide phase change layer is controlled through changing the temperature, so that the change of the conductivity is caused.
The vanadium dioxide phase change layer is subjected to ion doping of tungsten element by adopting a magnetron sputtering deposition, pulse laser deposition or sol-gel mode, so that the phase change temperature is further reduced.
The shape and structure of the graphene adjustable conductivity layer are consistent with those of the metal reflecting layer; the conductive electrode is arranged on the upper surface of the graphene adjustable conductivity layer to add bias voltage, and the Fermi level of the graphene is changed through external bias voltage, so that the conductivity of the graphene is adjusted; the conductive electrode is made of Ag or Al.
The metal resonant cavities which are arranged in the periodic array are a plurality of Al resonant patch layers and are symmetrically arranged on the upper surface of the graphene adjustable conductivity layer; every Al resonance paster layer is square frame structure, arrange three I type resonance post in the frame, the resonance post is placed along square center symmetry placed in the middle, wherein I type resonance post has large-scalely and small-size two kinds, large-scale I type resonance post corresponds 2 times of size for small-size I type resonance post, small-size I type resonance post is located the square center placed in the middle, two large-scale I type resonance post symmetric arrangement are in the both sides of small-size I type resonance post, the position of large-scale I type resonance post is 1.5 times the horizontal size of small-size I type resonance post relatively to small-size I type resonance post center.
The invention has the beneficial effects that:
1. the size and structural parameters of the terahertz metamaterial absorption resonator are effectively designed, the periodic array resonant cavity structure of the top metal is designed, when electromagnetic waves are vertically emitted into the wave absorbing structure from the upper side, electromagnetic resonance occurs between the resonant cavity of the top metamaterial and materials of other layers due to the difference of dielectric coefficients and refractive index parameters, reflection and loss occur inside the electromagnetic waves, and finally the high absorption rate of the terahertz wave band electromagnetic waves can enable the absorption rate of the whole wave absorbing device structure in a 4-5THZ wave band to reach about 80%, so that the terahertz wave band is less in wave absorbing device penetration, and the terahertz wave band periodic array resonant cavity structure has wide development prospects in the terahertz wave absorbing field.
2. Through the temperature control vanadium dioxide, the phase change effect of the vanadium dioxide layer is adjusted, and the transition process from the insulation state to the metal state is caused, so that the conductivity can be further adjusted, the wave absorbing performance of the terahertz wave absorber is adjusted, and the effective switching state of the terahertz wave absorber is changed.
3. The Fermi level of graphene is changed by adding bias voltage on the graphene layer, and the conductivity change of the graphene layer is further changed, so that the influence of the whole wave absorber on the electromagnetic wave absorption rate is adjusted, and the active tuning of the absorption of electromagnetic waves can be realized.
Drawings
FIG. 1 is a schematic diagram of the overall structure of a terahertz wave-absorbing resonator according to the invention;
FIG. 2 is a front view of the terahertz wave-absorbing resonator of the invention;
FIG. 3 is a top view of the terahertz wave-absorbing resonator structure of the invention;
FIG. 4 is an enlarged view of a top resonance structure of the terahertz wave-absorbing resonator of the invention;
FIG. 5 is a schematic diagram of the wave-absorbing rate of the terahertz wave-absorbing resonator of the invention under the condition that vanadium dioxide and graphene have different conductivities.
In the figure: 1, a metal resonant cavity; 2 a conductive electrode; 3, a graphene adjustable conductivity layer; 4VO2A phase change layer; 5, an intermediate medium layer; 6 a metal reflective layer.
Detailed Description
The following further describes a specific embodiment of the present invention with reference to the drawings and technical solutions.
As shown in figures 1 and 2, the vanadium dioxide-based tunable array integrated broadband terahertz wave-absorbing resonator is of a multilayer structure, and comprises a metal reflecting layer 6 (mainly playing a reflecting role), an intermediate medium layer 5 and a VO (vanadium oxide) from bottom to top, wherein the metal reflecting layer 6 is arranged at the bottom of the multilayer structure2The phase change layer 4, the graphene adjustable conductivity layer 3 and the metal resonant cavity 1 arranged in a periodic array on the top layer.
According to the invention, the broadband absorption of the whole wave-absorbing structure is regulated and controlled by designing the top metal resonant cavity, and regulating the change of the conductivity when the vanadium dioxide is changed from an insulating state to a metal state when the vanadium dioxide is changed into a phase, and regulating the change of the conductivity of the graphene through voltage regulation. The electromagnetic waves reflected by the upper surface of the wave-absorbing structure and the bottom reflecting layer interfere with each other, the metamaterial and the free space realize impedance matching by adjusting the thickness and the structure of the metamaterial, the equivalent dielectric constant and the equivalent magnetic conductivity are equal, and finally the metamaterial absorber meets the condition at a certain frequency so as to realize perfect absorption. Terahertz waves vertically enter the absorption resonator from the upper side, enter the absorber, oscillate and reflect back and forth inside, are absorbed by loss, and finally penetrate through a very small terahertz waveband, so that high absorption rate is achieved.
The metal reflecting layer 6 at the bottom is usually made of metal with good conductivity, and the thickness of the metal layer at the bottom needs to be larger than the transmission depth of terahertz, so that terahertz waves are prevented from being transmitted on the surface of the metal layer, an electromagnetic wave reflecting effect is achieved, and the internal back-and-forth reflection loss of the electromagnetic wave absorber is achieved. Therefore, the underlying metal is often selected from gold, silver, etc., and has a conductivity of about 4.09 × 107S/m, the bottom metal reflecting layer is of a square structure, the side length is 50-70um, and the thickness is 4-6 um.
The intermediate dielectric layer 5 is usually made of Al2O3Or SiO2A material such that the terahertz wave is reflected back and forth therein and is lost. The shape and structure of the metal layer are consistent with those of the bottom metal layer, the side length is 50-70um, and the thickness is 1.5-1.9 um.
Then one layer above is VO2The phase change layer 4 has the same shape and structure as the bottom metal reflecting layer 1, the side length is 50-70um, the thickness is 2.5-3.1um, and the phase change layer is in VO2The phase change layer 4 is added with a heat source patch to control the temperature change, the phase change is controlled by changing the temperature, so that the conductivity is changed, and the vanadium dioxide is made of a semiconductor insulating medium (the conductivity is 10 omega) along with the gradual rise of the temperature-1cm-1) Conversion to the metallic state (conductivity 3000. omega-1cm-1) The conductivity gradually increased. When the vanadium dioxide is in an insulating state, the conductivity is extremely low, and the absorption efficiency is also extremely low. Generally, the phase transition temperature of the pure vanadium dioxide film is higher, namely68 ℃, so that the phase transition temperature can be reduced by adopting an ion doping mode, the wave absorption of the device can be better controlled, the service life of the wave absorption device can be effectively ensured, the ion doping of tungsten elements can be carried out by adopting effective modes such as magnetron sputtering or pulsed laser deposition, sol-gel and the like, the phase transition temperature can be effectively reduced to 40 ℃, the phase transition can be effectively regulated, the conductivity can be further effectively changed, and the electromagnetic absorption rate of the whole wave absorption structure is influenced.
The upper layer is a graphene adjustable conductivity layer 3, the shape and structure of the graphene adjustable conductivity layer are consistent with those of the bottom metal reflecting layer 6, the side length is 50-70um, and the thickness is 0.5-1 um. The conductive electrode 2 is arranged on the graphene adjustable conductivity layer 3, bias voltage is added, the conductive electrode 2 is made of Ag or Al, the graphene has very good electrical characteristics, the Fermi level of the graphene can be changed through external bias voltage, so that the conductivity of the graphene is adjusted, the Lorentz force is changed through electrical modulation, the modulation rate is high, and the Fermi level of the graphene is changed within the range of 0.1-0.95 ev. The electric conductivity of the graphene is influenced by temperature to a small extent, so that the electric conductivity of the graphene is regulated and controlled by voltage, and the phase change of the vanadium dioxide is regulated and controlled by a heat source, so that the absorption rate of the terahertz electromagnetic waves of the integral resonance wave-absorbing structure is respectively modulated.
The top layer is a periodic array metal resonant cavity 1, and the material is selected as a metal Al resonant patch layer. The resonant patch layer enables the whole metamaterial wave-absorbing structure to generate electromagnetic resonance at a place with specific frequency by designing specific geometric parameters and geometric structures, as shown in fig. 3 and 4, each unit structure is a square with the side length and the whole thickness of 1-2 um. The square has the outer length a of 6-8um, the wall thickness b of 0.5-1um, the inner part of the square has the same shape, but I-shaped resonance columns with different sizes and different sizes are symmetrically arranged along the center of the square, the length c of 1.5-2um, the h of 0.5-1um, the d of 3-3.5um, the e of 0.5-1um, the f of 1.5-2um and the g of 0.25-0.5 um. The specific structural parameters are shown in fig. 4, a resonant cavity structure is formed by the symmetrical structure with different sizes and the external square metal ring, a super-surface material is formed by the periodic array, the graphene tuning conductivity layer 3, the vanadium dioxide phase change layer 4, the intermediate dielectric layer 5 and the metal reflection layer 6 are arranged below the super-surface material, and finally a perfect absorber of a terahertz wave band is formed in a compounding manner. But the thickness and the structure of the metamaterial need to be adjusted to obtain the optimized performance, so that the metamaterial and the free space realize impedance matching, and the equivalent dielectric constant and the equivalent magnetic permeability are equal. The Fermi level and the conductivity of the graphene are effectively changed by actively adjusting the voltage applied to the graphene, on the other hand, the temperature of a heat source is actively adjusted, the transition process of the vanadium dioxide from an insulating state to a metal state is promoted by effectively adjusting and controlling the phase change of the vanadium dioxide, the reflection and loss processes of the electromagnetic wave of the whole wave-absorbing structure in the interior are effectively adjusted and controlled, and finally the metamaterial absorber is enabled to carry out high absorption rate in a terahertz wave band in a certain range so as to realize perfect absorption.
Example 1
Au (mainly playing a role of reflection) of the bottom metal layer is of a square structure from bottom to top, the side length is 50um, the thickness is 5um, and the middle dielectric layer is made of Al2O3The layer, for square structure, the length of side size is 50um, and thickness is 1.9um, and the one deck upwards again is vanadium dioxide phase change layer, and the length of side size is 50um, and thickness is 2.5um, is the adjustable conductivity layer of graphite alkene at the one deck upwards, and for square structure, the length of side size is 50um, and thickness is 1um, and the super surface layer of top layer periodic array is the Al layer, and every unit structure is the square, and whole thickness is 1 um. The outside length of square is 6um, wall thickness 1.5um, inside is the shape the same, but the I type resonance post of variation in size that the size is different, the resonance post is placed along square center symmetry placed in the middle, wherein I type resonance post has two kinds, big I type resonance post is 2 times of little I type resonance post corresponding size, little I type resonance post is located the square center placed in the middle, and big I type resonance post is for small-size I type resonance post symmetric distribution, its position is 1.5 times the transverse dimension of I type resonance post relatively in small-size I type resonance post center. c length of 2um, h of 1um, d of 3.5um, e of 1um, f of2um, g is 0.5 um. At the moment, the temperature of the heat source is increased, and the vanadium dioxide is promoted to be in a metal state after phase change (the conductivity is 3000 omega)-1cm-1) The power supply bias voltage is improved, the Fermi level of the graphene is 0.95ev, the terahertz wave absorbing resonator is in an open state at the moment, impedance matching between the metamaterial and the free space is achieved, the absorption rate is highest, the absorption rate in a 4-5THZ wave band reaches more than 80%, the vanadium dioxide is low in temperature and in an insulating state, the conductivity is low, the absorption rate is low, the transmittance is high, and therefore the terahertz wave absorbing device has good characteristics on electromagnetic wave absorption in the terahertz wave band.
Example 2
Au (mainly playing a role of reflection) of the bottom metal layer is of a square structure from bottom to top, the side length size is 60um, the thickness is 4um, and the middle dielectric layer or the loss dielectric layer is made of SiO2The layer, for square structure, the length of side size is 60um, and thickness is 1.5um, and the one deck that makes progress again is vanadium dioxide phase change layer, and the length of side size is 60um, and thickness is 2.5um, is the adjustable conductivity layer of graphite alkene at the one deck that makes progress, and for square structure, the length of side size is 60um thickness and is 0.5um, and the super surface course of top layer periodic array is the Al layer, and every unit structure is the square, and whole thickness is 1 um. The outside length of square is 7um, 1um of wall thickness, inside is the shape the same, but the I type resonance post that the size is different, the resonance post is placed along square center symmetry between two parties, wherein I type resonance post has two kinds, big I type resonance post is 2 times of little I type resonance post corresponding dimension, little I type resonance post is located the square center between two parties, and big I type resonance post is for small-size I type resonance post symmetric distribution, the relative small-size I type resonance post center of its position is 1.5 times the transverse dimension of I type resonance post. c length of 1.5um, h of 0.5um, d of 3um, e of 0.5um, f of 1.5um, g of 0.25 um. At the moment, the temperature of a heat source is reduced, vanadium dioxide is lifted to be in an insulating state before phase change, power bias is not applied, the Fermi level of graphene is low, the absorption rate in the 4-5THZ wave band is low, and the vanadium dioxide almost penetrates through the wave absorber. In summary, the invention designs the size and structural parameters of the terahertz metamaterial absorption resonator by effective design, and sets the parametersThe method comprises the steps of measuring a periodic array resonant cavity structure of top-layer metal, adjusting the thickness and the structure of a metamaterial to obtain optimized performance, adjusting vanadium dioxide phase change through temperature control, applying bias voltage to adjust graphene conductivity, finally enabling the metamaterial and a free space to achieve impedance matching, enabling equivalent dielectric constant and equivalent magnetic conductivity to be equal, enabling electromagnetic waves to be reflected and lost inside the metamaterial, enabling the high absorption rate of the terahertz wave band electromagnetic waves to be high, enabling active tuning of terahertz wave band absorption to be achieved, and having good development prospect.
Claims (1)
1. The tunable array integrated broadband terahertz wave-absorbing resonator based on vanadium dioxide is characterized in that the tunable array integrated broadband terahertz wave-absorbing resonator based on vanadium dioxide is of a multilayer structure and comprises a metal reflecting layer at the bottom, a middle dielectric layer, a vanadium dioxide phase change layer, a graphene adjustable conductivity layer, a top conductive electrode and metal resonant cavities arranged in a periodic array from bottom to top;
the thickness of the metal reflecting layer is larger than the transmission depth of terahertz, and the metal reflecting layer is made of Au or Ag;
the middle dielectric layer has the same shape and structure as the metal reflecting layer and is made of Al2O3Or SiO2Sputtering on the surface of the metal reflecting layer in a magnetic sputtering mode;
the vanadium dioxide phase change layer is consistent with the metal reflection layer in shape and structure, a heat source patch is added in the vanadium dioxide layer and is connected with an external electric heating source, the temperature change of the vanadium dioxide phase change layer is controlled through the heat source patch, and the phase change of the vanadium dioxide phase change layer is controlled through changing the temperature, so that the change of the conductivity is caused;
the vanadium dioxide phase change layer is subjected to ion doping of tungsten element by adopting a magnetron sputtering deposition, pulse laser deposition or sol-gel mode, so that the phase change temperature is further reduced;
the shape and structure of the graphene adjustable conductivity layer are consistent with those of the metal reflecting layer; the conductive electrode is arranged on the upper surface of the graphene adjustable conductivity layer to add bias voltage, and the Fermi level of the graphene is changed through external bias voltage, so that the conductivity of the graphene is adjusted; the conductive electrode is made of Ag or Al;
the metal resonant cavities which are arranged in the periodic array are a plurality of Al resonant patch layers and are symmetrically arranged on the upper surface of the graphene adjustable conductivity layer; every Al resonance paster layer is square frame structure, arrange three I type resonance post in the frame, the resonance post is placed along square center symmetry placed in the middle, wherein I type resonance post has large-scalely and small-size two kinds, large-scale I type resonance post corresponds 2 times of size for small-size I type resonance post, small-size I type resonance post is located the square center placed in the middle, two large-scale I type resonance post symmetric arrangement are in the both sides of small-size I type resonance post, the position of large-scale I type resonance post is 1.5 times the horizontal size of small-size I type resonance post relatively to small-size I type resonance post center.
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