CN108199149A - A kind of double-T shaped left-handed material of single side - Google Patents

A kind of double-T shaped left-handed material of single side Download PDF

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Publication number
CN108199149A
CN108199149A CN201711489376.3A CN201711489376A CN108199149A CN 108199149 A CN108199149 A CN 108199149A CN 201711489376 A CN201711489376 A CN 201711489376A CN 108199149 A CN108199149 A CN 108199149A
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CN
China
Prior art keywords
double
shaped
medium substrate
along
handed material
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Pending
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CN201711489376.3A
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Chinese (zh)
Inventor
金杰
何政蕊
杨竟松
李钰滢
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Tianjin University
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Tianjin University
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Priority to CN201711489376.3A priority Critical patent/CN108199149A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices

Abstract

The invention discloses a kind of double-T shaped left-handed material of single side, including the cellular construction being made of medium substrate, medium substrate is made of dielectric constant of 3~3.8, loss tangent value of 0.0004 Rogers planks, the height of the medium substrate is 3~3.7mm, width is 1.3~2.0mm, thickness 0.5mm;The side of the medium substrate is coated with the copper facing of double-T shaped structure, and the horizontal line length in T-type structure is 1~1.7mm;Vertical line length is 2~2.8mm, the cellular construction expands extension along 3 D stereo direction and has been interconnected to form double-T shaped array of structures respectively, the direction of double-T shaped array of structures along the X-axis is set as preferable magnetic boundary condition PHC, perfact conductor boundary condition PEC is set as along Z-direction, electromagnetic wave is along Y direction, it is incident to double-T shaped inside configuration from left to right, setting energisation mode is encouraged for wave impedance.The left-handed material have the characteristics that broadband, low-loss, junior unit, it is simple in structure, be easy to make.

Description

A kind of double-T shaped left-handed material of single side
Technical field
The present invention relates to Meta Materials fields, and in particular to a kind of double-T shaped left-handed material of single side.
Background technology
Veselago proposes the concept of left-handed material in nineteen sixty-eight, and points out its dielectric constant and magnetic conductivity in certain electricity It is simultaneously negative in magnetic wave frequency range, and many unusual with negative refraction, perfect lens effect, inverse Doppler effects etc. Electromagnetic property.Just because of these special electromagnetic properties, just so that left-handed material is in optical imagery, antenna system, microwave The fields such as device and electromagnetism stealth have extensive and important application.However this theoretical ability after 30 years is by Smith It is realized for the first time by the form of plain conductor and split ring resonator combination.Henceforth, the research of left-handed material, which has been gone on, flies Speed develops to obtain fast traffic lane.
In the time of nearly more than ten years, left-handed material has obtained significant progress, various different designs types constantly by It proposes.Generally, these structures can be divided into two types according to the incident direction of electromagnetic wave:One kind is parallel incident Jie of electromagnetic wave Matter substrate form, such as " huge " character form structure, omega structure;Another kind is the parallel incident medium substrate form of electromagnetic wave, such as I-shaped, grid-shaped structure etc..But vertical incidence structure has the shortcomings that apparent relative to parallel incidence, such as is easy to cause Screen effect (screening effects), absorption loss (absorption loss) are larger etc..And these shortcomings are all real With that environment avoids as possible in parallel incidence structure, and single side and two kinds two-sided can be divided by structure type.Two-sided structure Due to all to carry out structure etching in the both sides of medium substrate, the difficulty of making is increased, while loss is also universal bigger than normal, also not It is the first choice of utility structure.So the left-handed material structure of the parallel incidence of single side at this stage is the Main way of research.At present Through there are a variety of single-sided structures, if the cross metal wire of Nasrin is to the left-handed material of structure, the magnetic resonators of Chen Chunhui with Left-handed material that coplanar short plain conductor is combined etc..And these structures in the prevalence of complicated, narrow bandwidth, loss greatly with And volume it is big a series of problems, such as, seriously limit the application and development of left-handed material.Therefore produce broadband, low-loss, The Novel single-face left-handed material of junior unit is imperative.
Invention content
The purpose of the invention is to overcome deficiency of the prior art, provide a kind of with broadband, low-loss, small list The double-T shaped left-handed material of Novel single-face that is first, simple in structure, being easy to making.
The purpose of the present invention is what is be achieved through the following technical solutions:
A kind of double-T shaped left-handed material of single side, including the cellular construction being made of medium substrate, medium substrate is by dielectric constant It is made of 3~3.8, loss tangent value of 0.0004 Rogers planks, the height of the medium substrate is 3~3.7mm, width For 1.3~2.0mm, thickness 0.5mm;The side of the medium substrate is coated with the copper facing of double-T shaped structure, the horizontal stroke in T-type structure Line length is 1~1.7mm;Vertical line length is 2~2.8mm, and the cellular construction expands extension phase respectively along 3 D stereo direction It connects and is formed with double-T shaped array of structures, the direction of double-T shaped array of structures along the X-axis is set as preferable magnetic boundary condition PHC is set as perfact conductor boundary condition PEC along Z-direction, and electromagnetic wave is incident to double-T shaped knot from left to right along Y direction Inside structure, setting energisation mode is encouraged for wave impedance.
Further, the material for being similar to air between cellular construction by dielectric constant is connected with each other.It is described copper-plated Width is 0.10~0.15mm, thickness 0.035mm.
Compared with prior art, advantageous effect caused by technical scheme of the present invention is:
By simulation analysis obtain left-handed material of the present invention in 9.99GHz~17.10GHz frequency ranges effective dielectric constant, Equivalent permeability, refractive index real part are negative simultaneously, and absolute bandwidth money reaches 7.11GHz, and relative bandwidth reaches 52.49%, unit Electric size is only 0.07, and down to 0.09dB, embody that the present invention protects is a kind of broadband, low-loss, small list for unit loss The outstanding left-handed material of member.
Description of the drawings
Fig. 1 is left-handed material cellular construction of the present invention and dimensional structure schematic diagram.
Fig. 2 is cellular construction figure of the left-handed material for emulation.
Fig. 3 (a) and Fig. 3 (b) is respectively the amplitude simulation result of S parameter and phase simulation result.
Fig. 4 (a), (b), (c) be respectively effective dielectric constant, magnetic conductivity, refractive index electromagnetic parameter analogous diagram.
Fig. 5 is effective electromagnetic parameter comparison diagram.
Specific embodiment
The invention will be further described below in conjunction with the accompanying drawings.
As depicted in figs. 1 and 2, the double-T shaped left-handed material of a kind of single side, including the cellular construction being made of medium substrate, sheet Medium substrate is made by common Rogers RO4350 materials in embodiment, relative dielectric constant 3.48, and loss tangent value is 0.0004, medium substrate length b=3.36mm, width a=1.70mm, thickness 0.50mm, the side of medium substrate are coated with double T The copper facing of type structure, the horizontal line length l1=1.40mm in T-shaped plated copper structure, vertical line length l2=2.42mm, other dimensionings Very little parameter is as follows:S=0.26mm, the width of all copper-plated metal lines is 0.12mm, and plating copper thickness is 0.035mm.
The cellular construction of left-handed material is expanded according to 1x4x1 to three directions of 3-D walls and floor in the present embodiment, is formed Array as shown in Fig. 2, its simulation architecture unit size is 0.535mm*6.05mm*3.36mm, passes through dielectric between cellular construction The material that constant is similar to air is connected with each other, such as foam, two-sided sponge;Perimeter strip is carried out to the simulation unit structure in Fig. 2 The setting of part and energisation mode:Preferable magnetic boundary condition PHC is set as along the direction of X-axis, fore-and-aft clearance is set as 1.524mm, Perfact conductor boundary condition PEC is set as along Z-direction, between the upper and lower away from 3.36mm is set as, electromagnetic wave is along Y direction, from a left side It is incident on double-T shaped inside configuration to the right, setting energisation mode is encouraged for wave impedance, and the spacing of left and right is 6.75mm.The solid is tied Structure is one-dimensional left-handed configuration, in the y-axis direction with left hand characteristic.
Shown in the S parameter amplitude curve and phase curve such as Fig. 3 (a) that are obtained by HFSS softwares and Fig. 3 (b), during emulation Low-limit frequency is set as 8.00GHz, and highest frequency is set as 18.00GHz, frequency interval 0.01GHz.It can from Fig. 3 (a) Go out, S11 and S21 resonance points are located at 9.89GHz and 16.99GHz, and return loss can be seen that for -58.95dB. from Fig. 3 (b) Mutation takes place in the phase of S21 at 9.98GHz, indicates the beginning of double negative regions, and the amplitude of S21 is big in passband In -0.36dB, illustrate that the transmission loss of average each cellular construction is less than 0.09dB.
Smith proposes S parameter method within 2005, it can accurately and rapidly be extracted by the phase and amplitude of S parameter The out effective electromagnetic parameter of left-handed material has been commonly utilized in left-handed material field now.By one section of MATLAB code, Effective electromagnetic parameter can be extracted from S parameter:Effective dielectric constant, equivalent permeability, refractive index.By finding out three's reality Portion is simultaneously negative ghz area, to determine the range of left hand frequency range.
As shown in Fig. 4 (a) to Fig. 5, effective dielectric constant, magnetic conductivity, refractive index in 9.99GHz~17.10GHz simultaneously It is negative, common frequency band is the left hand frequency range of double-T shaped structure.
1 effective electromagnetic parameter of table is with frequency variation tendency
Effective electromagnetic parameter Frequency/GHz
ε<0 9.99-17.24
μ<0 9.99-17.10
n<0 9.99-17.11
As shown in table 1, it can be seen that the left-handed material in 9.99GHz~17.10GHz frequency ranges effective dielectric constant, etc. Effect magnetic conductivity, refractive index real part are negative simultaneously, and absolute bandwidth money reaches 7.11GHz, and relative bandwidth reaches 52.49%, unit electricity Size is only 0.07, unit loss down to 0.09dB, embody the double-T shaped structure of Novel single-face be a kind of broadband, it is low-loss, small The outstanding left-handed material of unit.
The present invention is not limited to embodiments described above.The description of specific embodiment is intended to describe and be said above Bright technical scheme of the present invention, above-mentioned specific embodiment is only schematical, is not restricted.This is not being departed from In the case of invention objective and scope of the claimed protection, those of ordinary skill in the art may be used also under the enlightenment of the present invention The specific transformation of many forms is made, within these are all belonged to the scope of protection of the present invention.

Claims (3)

1. a kind of double-T shaped left-handed material of single side, which is characterized in that including the cellular construction being made of medium substrate, medium substrate Be made of dielectric constant of 3~3.8, loss tangent value of 0.0004 Rogers planks, the height of the medium substrate for 3~ 3.7mm, width are 1.3~2.0mm, thickness 0.5mm;The side of the medium substrate is coated with the copper facing of double-T shaped structure, T-shaped Horizontal line length in structure is 1~1.7mm;Vertical line length is 2~2.8mm, and the cellular construction is distinguished along 3 D stereo direction Expansion extension has been interconnected to form double-T shaped array of structures, and the direction of double-T shaped array of structures along the X-axis is set as preferable magnetic Boundary condition PHC is set as perfact conductor boundary condition PEC along Z-direction, and electromagnetic wave is incident to from left to right along Y direction Double-T shaped inside configuration, setting energisation mode are encouraged for wave impedance.
2. the double-T shaped left-handed material of a kind of single side according to claim 1, which is characterized in that pass through dielectric between cellular construction The material that constant is similar to air is connected with each other.
3. the double-T shaped left-handed material of a kind of single side according to claim 1, which is characterized in that the copper-plated width is 0.10 ~0.15mm, thickness 0.035mm.
CN201711489376.3A 2017-12-30 2017-12-30 A kind of double-T shaped left-handed material of single side Pending CN108199149A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108598713A (en) * 2018-04-02 2018-09-28 杭州电子科技大学 A kind of single side left-handed material based on T shape metal strips and blocky left-handed material
CN113241531A (en) * 2021-04-28 2021-08-10 大连理工大学 Tunable array integrated broadband terahertz wave-absorbing resonator based on vanadium dioxide

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US20120212375A1 (en) * 2011-02-22 2012-08-23 Depree Iv William Frederick Quantum broadband antenna
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CN104241866A (en) * 2014-07-10 2014-12-24 杭州电子科技大学 Broadband low-consumption junior unit left-handed material based on double crosses
CN106450795A (en) * 2016-10-21 2017-02-22 西北工业大学 Wave-absorbing structure of double-frequency polarized insensitive monolayer metamaterial

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US20120212375A1 (en) * 2011-02-22 2012-08-23 Depree Iv William Frederick Quantum broadband antenna
CN103296409A (en) * 2012-02-29 2013-09-11 深圳光启创新技术有限公司 Broadband metamaterial antenna housing and antenna system
CN104241866A (en) * 2014-07-10 2014-12-24 杭州电子科技大学 Broadband low-consumption junior unit left-handed material based on double crosses
CN106450795A (en) * 2016-10-21 2017-02-22 西北工业大学 Wave-absorbing structure of double-frequency polarized insensitive monolayer metamaterial

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STEFAN LINDEN ETC.: "Photonic Metamaterials: Magnetism at Optical Frequencies", 《IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS》 *
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108598713A (en) * 2018-04-02 2018-09-28 杭州电子科技大学 A kind of single side left-handed material based on T shape metal strips and blocky left-handed material
CN113241531A (en) * 2021-04-28 2021-08-10 大连理工大学 Tunable array integrated broadband terahertz wave-absorbing resonator based on vanadium dioxide
CN113241531B (en) * 2021-04-28 2022-04-12 大连理工大学 Tunable array integrated broadband terahertz wave-absorbing resonator based on vanadium dioxide

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