CN113237578A - Multi-dimensional force/moment measuring method based on full-shear effect quartz wafer - Google Patents
Multi-dimensional force/moment measuring method based on full-shear effect quartz wafer Download PDFInfo
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- 230000000694 effects Effects 0.000 title claims abstract description 77
- 239000010453 quartz Substances 0.000 title claims abstract description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000005259 measurement Methods 0.000 claims abstract description 19
- 230000035945 sensitivity Effects 0.000 claims abstract description 18
- 238000012360 testing method Methods 0.000 claims abstract description 18
- 238000005520 cutting process Methods 0.000 claims abstract description 6
- 235000012431 wafers Nutrition 0.000 claims description 80
- 239000013078 crystal Substances 0.000 claims description 32
- 238000010008 shearing Methods 0.000 claims description 13
- 230000003068 static effect Effects 0.000 claims description 5
- 238000007906 compression Methods 0.000 abstract description 7
- 230000007613 environmental effect Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000000691 measurement method Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004092 self-diagnosis Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
- G01L1/162—Measuring force or stress, in general using properties of piezoelectric devices using piezoelectric resonators
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Abstract
The invention provides a multidimensional force/moment measuring method based on a full shear effect quartz wafer, which adopts a central body, arranges the shear effect wafer on the side surface or the lower surface of the central body according to different rules according to the test requirements of different occasions, and the direction of the maximum sensitivity of the shear effect wafer is consistent with the direction of the measured force, thereby realizing the function of testing multidimensional force; and meanwhile, establishing a mechanical distribution model for multi-dimensional force testing in different arrangement modes, and obtaining the magnitude and direction of the tested multi-dimensional force and the action point of the force through inverse calculation of a mechanical formula. The method abandons the original combined measurement mode of the tension-compression effect and the shear effect wafer, and eliminates the measurement error caused by the self characteristics of the tension-compression effect wafer in principle. The test precision is improved, the output error caused by the most sensitive cutting heat in environmental factors is greatly eliminated, the anti-interference requirement is met, and the force testability under extreme conditions of high temperature and large temperature change is improved.
Description
Technical Field
The invention belongs to the technical field of piezoelectric testing, and relates to a multidimensional force/torque measuring method based on a full shear effect quartz wafer.
Background
In modern machinery, a force measurement technology has been penetrated through the design, manufacture, assembly and other processes of modern equipment, and is widely applied to the fields of medical treatment, transportation, aerospace and the like. The force measurement technology is particularly important for monitoring, feedback and control of the process, and is a key link for realizing intelligent technologies such as equipment self-perception, self-diagnosis and self-adjustment. The accurate measurement of the force directly affects whether the function of the equipment is realized, and therefore, the proposal of a high-precision force measurement method needs to be solved urgently.
The research on force measurement at home and abroad mainly includes strain type, piezoelectric type and the like in principle. The strain type has the characteristics of high sensitivity, high precision and the like, and has good static characteristics, but most of acting force in modern equipment is dynamic force, the change is fast, the frequency is high, and the dynamic characteristics of the strain type are poor. The piezoelectric type dynamometer has high rigidity, good linearity and good temperature stability, has higher natural frequency under certain additional mass, and is suitable for measuring high-frequency dynamic force.
In these existing and already put into use piezoelectric force measuring instruments, two commonly used shear types are mainly used among all shear types of quartz wafers — a tension-compression effect wafer having a tension-compression effect and a shear effect wafer having a shear effect. The piezoelectric sensor is generally designed by arranging two or more groups of the above two types of cut wafers to measure multidimensional force. The three-dimensional force sensor is typically a three-dimensional piezoelectric force sensor, three groups of the two types of cut wafers are adopted to measure three-dimensional force, and the sensors are arranged to measure more dimensional force.
However, due to the anisotropic characteristic of the quartz crystal, the pull-press effect wafer is inferior to the shear effect wafer except for some structures or occasions with specific requirements, for example, the sensitivity direction sensitivity is lower than that of the shear effect wafer, the interference force generating the lateral effect is more than that of the shear effect wafer, and the main influence direction of the cutting heat in the cutting environment factors on the force gauge is the pull-press effect wafer measurement direction, so the measurement method of the pull-press effect wafer limits the improvement of the force gauge performance, and a new force measurement method is urgently needed to be provided to improve the force measurement accuracy in principle.
Disclosure of Invention
The invention discloses a novel method for measuring multidimensional force/moment by only adopting a shear effect wafer, aiming at overcoming the defect of measuring a tension-compression effect wafer in the prior art. The method adopts a cuboid-shaped central body and only adopts shear effect wafers for arrangement. Because the shear effect wafer can only measure the surface shear force of the wafer, the shear effect wafer is arranged in the center of the four side surfaces or the lower surface of the central body, the force in each direction is obtained by a specific wafer, the maximum sensitivity direction of all the wafers is consistent with the direction of the measured force, and the multi-dimensional force/moment test function is realized by transmitting the static friction force. When external force acts on the upper surface of the central body, the external force is transmitted to each wafer through static friction force, electric charges are generated on the electrode surfaces of the wafers through the shearing piezoelectric effect of the wafers, the electric charges are acquired by the electrode plates and are transmitted to the charge amplifier through the charge signal wires to be amplified and converted into voltage signals, and the voltage signals are acquired by the acquisition card and displayed through software.
The technical scheme of the invention is as follows:
a multidimensional force/moment measuring method based on a full shear effect quartz wafer comprises a central body A and a shear effect quartz wafer; the multidimensional force/moment measuring method based on the full shear effect quartz wafer is characterized in that only the shear effect quartz wafer with the shear effect is adopted for measurement in a cutting force test, the shear effect quartz wafer is arranged in the center of the side surface and the bottom surface of a cuboid-shaped central body A, the force in each direction is obtained by the shear effect quartz wafer, the direction of the maximum sensitivity of each wafer is consistent with the direction of the measured force during arrangement, and the external force is transmitted through static friction force, so that the multidimensional force/moment measurement is realized;
the central body A comprises a side surface, an upper bottom surface and a lower bottom surface, wherein the side surface is vertical to the upper bottom surface and the lower bottom surface, the lower bottom surface is superposed with a coordinate plane XOY, the size of each mounting surface is larger than that of a shearing effect quartz wafer, the central body A is arranged in a rectangular coordinate system with coordinate axes X, Y, Z, one side surface is superposed with a vertical working plane YOZ, and the central body is corresponding to the coordinate axes.
Arrangement of the shear effect quartz wafers: namely, two or three surfaces of the central body A are provided with the shearing effect quartz wafers; or a change in the number of shear effect quartz wafers in a crystal group disposed at each position on the surface of the central body a; or each face is provided with a position change of the shearing effect quartz wafer; or a plurality of crystal group placing positions are arranged on one surface.
The invention has the beneficial effects that: according to the method, according to the test requirements of different occasions, only the shearing effect quartz wafers are arranged, the original combined measurement mode of the pulling and pressing effect wafers and the shearing effect wafers is abandoned, the measurement error caused by the characteristics of the pulling and pressing effect wafers is eliminated in principle, the inter-directional interference of the dynamometer is reduced, the test precision is improved, the output error caused by the most sensitive cutting heat in environmental factors is greatly eliminated, the anti-interference requirement is met, and the force testability under the extreme conditions of high temperature and large temperature change is improved.
Drawings
Figure 1 shows, in a schematic way, example 1 of the process according to the invention.
Figure 2 shows, in a schematic way, example 2 of the method according to the invention.
Figure 3 shows, in a schematic way, example 3 of the method according to the invention.
In the figure: a is a central body; the first, the second, the third and the fourth are four side surfaces of the central body; sixthly, the upper surface and the lower surface of the central body are formed; 1-1, 1-2, 1-3, 1-4 are the shear effect quartz boules of example 1 under this method; 2-1, 2-2, 2-3, 2-4, 2-5, 2-6, 2-7, 2-8 are the shear effect quartz crystal groups of example 2 under the method; 3-1, 3-2, 3-3, 3-4, 3-5, 3-6, 3-7, 3-8, 3-9, 3-10, 3-11, 3-12 are shear effect quartz crystal lots of example 3 under the method, and each lot contains a number of wafers. The arrows in the figure point to the direction of maximum sensitivity for each shear effect crystalline group.
Detailed Description
The following detailed description of the embodiments of the invention refers to the accompanying drawings and claims.
The method uses only shear effect wafers for multi-dimensional force/torque measurements. First, a rectangular parallelepiped central body structure is designed, and wafer placement positions are provided at the centers of the side surfaces and the lower surface of the central body. Based on the measurement characteristics of the shear effect wafer, the shear effect wafer is arranged on the side surface or the lower surface of the central body, a specific wafer is used for acquiring the force in each direction, and the direction of the maximum sensitivity of each wafer is consistent with the direction of the measured force. The method can design different wafer arrangement modes according to different measured force dimensions, and one or more wafers are arranged on the side surface or the bottom surface according to different dimensions and test requirements for measurement.
Example 1, as shown in fig. 1, this way is intended to measure a spatial three-dimensional force, where a is a central body, which is an indispensable part of the method, and all arranged shear effect quartz crystal groups need to be attached to the central body, which is a rectangular parallelepiped structure, and in the figure, first, second, third, and fourth are four side surfaces of the central body; sixthly, the upper surface and the lower surface of the central body are arranged in a rectangular coordinate system with a coordinate axis X, Y, Z, the lower surface is coincided with the horizontal working surface XOY, the side surface is coincided with the vertical working surface YOZ, and the central body is corresponding to the coordinate axis.
The side surfaces and the bottom surface of the central body are respectively arranged with the shearing effect crystal groups, the number of y0 effect wafers in each crystal group is a plurality, and the measuring sensitivity can be improved by increasing the number of quartz wafers. The force in the Z direction is measured through crystal groups 1-1 and 1-2 on the side surfaces II and III, the maximum sensitivity direction of quartz wafers of the two crystal groups is vertically downward and is consistent with the direction of the force to be measured, and similarly, the crystal groups 1-1 and 1-2 can also be arranged at the side surfaces I and III, or in order to improve the sensitivity of the dynamometer in the Z direction and the overall stability and frequency response of the dynamometer, the shearing effect crystal groups can be uniformly arranged on the four side surfaces I, II, III and IV to measure the force in the Z direction; the lateral force in the X direction is measured through a shearing effect crystal group 1-3 arranged on the bottom surface of the central body, and the maximum sensitivity direction of a wafer in the crystal group points to the X direction; the lateral force in the Y direction is measured through the shear effect crystal groups 1 to 4 arranged on the bottom surface, and the maximum sensitivity direction of the wafer in the crystal group points to the Y direction. When external force acts on the upper surface of the central body, the solving formula of the three-direction force of the arrangement mode is shown as the formula (1).
Fx＝F1-3
Fy＝F1-4 (1)
Fz＝F1-1+F1-2
Wherein, Fx,Fy,FzExternal force in three directions; f1-1,F1-2,F1-3,F1-4The output force value of the quartz crystal group at each position.
Example 2 in this way, as shown in fig. 2, no quartz wafer is placed on the lower surface of the central body a, and the lateral force is measured by the shear effect crystalline groups 2-5, 2-6, 2-7, 2-8 placed on the sides (r), (g) and (g) of the central body a. As shown in the figure, the force in the X direction is obtained through the side face (25) and the side face (2-7) of the central body A and the crystal groups (2-6) and the crystal groups (2-8) on the side face (2) and the side face (3) of the central body A, the force in the Y direction is obtained through the side face (2-6) and the crystal groups (2-8) on the side face (3) of the central body A, the direction of the maximum sensitivity of the wafers in the crystal groups is consistent with the direction of the force to be measured, the number of the wafers can be increased according to the requirement, and the effect of increasing the sensitivity is achieved; in order to ensure symmetry, the force in the Z direction is measured through crystal groups 2-1, 2-2, 2-3 and 2-4 arranged on four side surfaces of a central body A, the direction of the maximum sensitivity of the wafers in the crystal groups is vertically downward and is superposed with the force in the Z direction, and the number of the wafers in each crystal group is increased according to requirements.
The arrangement mode can measure not only three-way force, but also three-way torque, and the mechanical solving model of the three-way force and the three-way torque in the arrangement mode is shown as a formula (2).
Wherein, Fx,Fy,Fz,Mx,My,MzForce and torque in three directions in the method; f2-1,F2-2,F2-3,F2-4,F2-5,F2-6,F2-7,F2-8The output force value of the crystal group for each position.
Example 3 as shown in fig. 3, this method is an improvement of the second method, in order to ensure that the torque can be accurately measured in the horizontal direction, and the torque does not affect the measurement results of other crystal groups, therefore, a set of shear effect quartz crystal groups 3-9, 3-10, 3-11, 3-12 are respectively added on four sides (i), (ii), (iii), and (iv) of the central body a, the maximum sensitivity directions of the quartz wafers in the four quartz crystal groups are clockwise arranged and are consistent with the horizontal torque direction, and the arrangement of the other crystal groups is the same as that of the second method.
The solution for three-directional force and three-directional moment in this manner can be obtained as shown in equation (3).
Wherein, Fx,Fy,Fz,Mx,My,MzForce and torque in three directions in the method; f3-1,F3-2,F3-3,F3-4,F3-5,F3-6,F3-7,F3-8,F3-9,F3-10,F3-11,F3-12The output force value of the crystal group for each position.
The method is provided, aiming at the problems of interference caused by the existence of the tension-compression effect piezoelectric quartz wafer in the test process and the influence of heat in the test environment on the test, abandons the method of using the tension-compression effect wafer and the shear effect wafer in combination in the traditional piezoelectric test method, and provides a new method for measuring force by only adopting the shear effect wafer. Force measurement under different occasions and requirements is realized by arranging the quartz wafers with the shearing effect at the periphery of the central body. The method reduces the lateral interference and the environmental influence in the testing process in principle, particularly the influence of an environmental heat source on the testing structure in the testing process, and improves the testing precision.
Although the invention has been described in detail with reference to the preferred embodiments, it is not intended to be limited to the specific arrangements shown. In understanding the present invention, variations may be made by those skilled in the art without departing from the scope of the present invention. Therefore, those skilled in the art can also use a central body or a pentagonal prism of a triangular prism shape and a more polygonal prism for the arrangement of the shear effect wafers, and can also set a plurality of wafer arrangement positions on one face, not only at the center of each face. Additions to the technology and substitutions that are equivalent to those in the art are intended to be within the scope of the invention.
Claims (2)
1. A multidimensional force/moment measuring method based on a full shear effect quartz wafer comprises a central body A and a shear effect quartz wafer; the method is characterized in that: the multidimensional force/moment measuring method based on the full shear effect quartz wafer is characterized in that only the shear effect quartz wafer with the shear effect is adopted for measurement in a cutting force test, the shear effect quartz wafer is arranged in the center of the side surface and the bottom surface of a cuboid-shaped central body A, the force in each direction is obtained by the shear effect quartz wafer, the direction of the maximum sensitivity of each wafer is consistent with the direction of the measured force during arrangement, and the external force is transmitted through static friction force, so that the multidimensional force/moment measurement is realized;
the central body A comprises a side surface, an upper bottom surface and a lower bottom surface, wherein the side surface is vertical to the upper bottom surface and the lower bottom surface, the lower bottom surface is superposed with a coordinate plane XOY, the size of each mounting surface is larger than that of a shearing effect quartz wafer, the central body A is arranged in a rectangular coordinate system with coordinate axes X, Y, Z, one side surface is superposed with a vertical working plane YOZ, and the central body is corresponding to the coordinate axes.
2. The method for measuring the multi-dimensional force/moment based on the full shear effect quartz wafer as claimed in claim 1, wherein the shear effect quartz wafer is arranged in a manner that: namely, two or three surfaces of the central body A are provided with the shearing effect quartz wafers; or a change in the number of shear effect quartz wafers in a crystal group disposed at each position on the surface of the central body a; or each face is provided with a position change of the shearing effect quartz wafer; or a plurality of crystal group placing positions are arranged on one surface.
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Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1553160A (en) * | 2003-05-28 | 2004-12-08 | 大连理工大学 | Piezoelectric quartzplate-type torque sensor and producing process thereof |
| US20070028692A1 (en) * | 2005-08-05 | 2007-02-08 | Honeywell International Inc. | Acoustic wave sensor packaging for reduced hysteresis and creep |
| CN101149301A (en) * | 2007-11-01 | 2008-03-26 | 大连理工大学 | Large value piezoelectric quartz multi-component force sensor |
| US20090272182A1 (en) * | 2008-05-05 | 2009-11-05 | Kistler Holding Ag | Load cell |
| US20100018318A1 (en) * | 2008-07-22 | 2010-01-28 | Epson Toyocom Corporation | Pressure sensor |
| CN102564656A (en) * | 2012-02-20 | 2012-07-11 | 大连理工大学 | Piezoelectric quartz crystal group for measuring multi-dimensional force, and manufacturing method for piezoelectric quartz crystal group |
| CN106441665A (en) * | 2016-09-26 | 2017-02-22 | 郑州航空工业管理学院 | Piezoelectric-quartz-wafer's-bending-effect-based bending moment measurement method and sensor |
| CN106441675A (en) * | 2016-11-08 | 2017-02-22 | 烟台职业学院 | Non-load-sharing piezoelectric thrust test device |
| CN206300744U (en) * | 2016-09-26 | 2017-07-04 | 郑州航空工业管理学院 | Moment of flexure measurement sensor based on piezoelectric quartz crystal plate curvature effect |
| CN108020355A (en) * | 2017-11-24 | 2018-05-11 | 济南大学 | Small size wide range integrated form piezoelectric six-dimensional force sensor and its measuring method |
| CN108151925A (en) * | 2018-01-17 | 2018-06-12 | 华侨大学 | Concrete plane dynamic stress sensor based on piezoelectric material |
| CN109282922A (en) * | 2018-11-15 | 2019-01-29 | 大连理工大学 | A kind of piezoelectricity drilling dynamometer based on sensor cross Unequal distance arrangement |
| CN110036267A (en) * | 2016-11-30 | 2019-07-19 | 基斯特勒控股公司 | Measurement simultaneously is either be dynamically also possible to the measurement sensor of static power |
| CN110186597A (en) * | 2019-05-14 | 2019-08-30 | 大连理工大学 | A kind of dynamometer structure of side arrangement piezoelectric transducer |
-
2021
- 2021-05-08 CN CN202110498028.2A patent/CN113237578B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1553160A (en) * | 2003-05-28 | 2004-12-08 | 大连理工大学 | Piezoelectric quartzplate-type torque sensor and producing process thereof |
| US20070028692A1 (en) * | 2005-08-05 | 2007-02-08 | Honeywell International Inc. | Acoustic wave sensor packaging for reduced hysteresis and creep |
| CN101149301A (en) * | 2007-11-01 | 2008-03-26 | 大连理工大学 | Large value piezoelectric quartz multi-component force sensor |
| US20090272182A1 (en) * | 2008-05-05 | 2009-11-05 | Kistler Holding Ag | Load cell |
| US20100018318A1 (en) * | 2008-07-22 | 2010-01-28 | Epson Toyocom Corporation | Pressure sensor |
| CN102564656A (en) * | 2012-02-20 | 2012-07-11 | 大连理工大学 | Piezoelectric quartz crystal group for measuring multi-dimensional force, and manufacturing method for piezoelectric quartz crystal group |
| CN106441665A (en) * | 2016-09-26 | 2017-02-22 | 郑州航空工业管理学院 | Piezoelectric-quartz-wafer's-bending-effect-based bending moment measurement method and sensor |
| CN206300744U (en) * | 2016-09-26 | 2017-07-04 | 郑州航空工业管理学院 | Moment of flexure measurement sensor based on piezoelectric quartz crystal plate curvature effect |
| CN106441675A (en) * | 2016-11-08 | 2017-02-22 | 烟台职业学院 | Non-load-sharing piezoelectric thrust test device |
| CN110036267A (en) * | 2016-11-30 | 2019-07-19 | 基斯特勒控股公司 | Measurement simultaneously is either be dynamically also possible to the measurement sensor of static power |
| CN108020355A (en) * | 2017-11-24 | 2018-05-11 | 济南大学 | Small size wide range integrated form piezoelectric six-dimensional force sensor and its measuring method |
| CN108151925A (en) * | 2018-01-17 | 2018-06-12 | 华侨大学 | Concrete plane dynamic stress sensor based on piezoelectric material |
| CN109282922A (en) * | 2018-11-15 | 2019-01-29 | 大连理工大学 | A kind of piezoelectricity drilling dynamometer based on sensor cross Unequal distance arrangement |
| CN110186597A (en) * | 2019-05-14 | 2019-08-30 | 大连理工大学 | A kind of dynamometer structure of side arrangement piezoelectric transducer |
Non-Patent Citations (1)
| Title |
|---|
| 谢立强: "《基于剪应力检测的新型石英微陀螺关键技术研究》", 《中国博士学位论文全文数据库(电子期刊)》 * |
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