CN113215554A - 基于氢离子刻蚀反应辅助激光刻蚀的金刚石微加工方法 - Google Patents
基于氢离子刻蚀反应辅助激光刻蚀的金刚石微加工方法 Download PDFInfo
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Abstract
一种基于氢离子刻蚀反应辅助激光刻蚀的金刚石微加工方法,包括:对金刚石试样表面进行预处理,去除表面杂质;将激光光束聚焦在预处理后的金刚石试样表面,进行激光辐照处理,将金刚石试样表层金刚石成分诱变为石墨化成分;对经过激光辐照处理的金刚石试样进行氢离子刻蚀反应,将金刚石试样表面经过激光辐照诱变产生的石墨化成分选择性去除,实现对金刚石试样的微加工。本发明通过采用激光对金刚石试件表面进行石墨化诱变,随后采用氢离子刻蚀选择性去除金刚石试件表面激光诱变的石墨化成分,避免了常规激光刻蚀过程中金刚石表面出现杂质残留和破碎崩边等损伤,显著提升了金刚石微加工的质量和精度。
Description
技术领域
本发明涉及一种金刚石微加工方法。特别是涉及一种基于氢离子刻蚀反应辅助激光刻蚀的金刚石微加工方法。
背景技术
太赫兹电磁波以其优秀的宽带性和瞬态性,在无线通信过程中能够实现极高的数据传输速率和稳定性,因而成为未来6G通讯研发的关键技术。随着国内外针对太赫兹科学技术研究的不断深入,相关太赫兹器件的开发对材料提出了更高的要求。CVD金刚石材料以其良好的导热性能、低介电常数、低微波损耗、优秀的机械性能以及相对低廉的制备成本等,在太赫兹器件领域具有广阔的应用前景。太赫兹器件(如太赫兹MEMS滤波器和大功率太赫兹源等)内部涉及大量的高深宽比微光栅结构。因此,高精度高质量的金刚石微加工技术,成为实现金刚石在太赫兹器件领域应用的关键技术。
由于CVD金刚石本身极高的硬度和化学稳定性,常规微细制造工艺难以直接应用。目前针对金刚石材料的高深宽比微细加工,应用较多的是一些干法刻蚀技术,如RIE、DRIE、ICP等,并取得了一定的进展。然而,上述工艺的热效应较为严重,极容易污染和损伤金刚石表面,并且常常涉及掩模的应用,导致其工艺复杂,成本较高。激光刻蚀是近年来迅速发展的一种微细加工方法。该方法具有较高的加工精度和效率,并且热效应小,无需掩模,工艺简单,成本较低,对环境无污染,在高深宽比微细加工方向显示出极大的潜力。然而,对于高深宽比CVD金刚石微细结构加工,超快激光刻蚀尚存在一些不足。超快激光加工金刚石材料时焦斑附近的高温常常会造成微细结构边缘金刚石材料相变形成无定形碳和石墨相,同时高温气化去除的碳相会在金刚石材料表面重凝形成非晶碳相,因而降低金刚石表面质量;此外,焦斑附近材料瞬间被去除将导致周围材料应力状态的急剧变化,从而引发微细结构边缘应力集中,出现裂纹和崩碎,造成金刚石微细结构表面质量下降。如何另辟蹊径,克服现有技术不足,开发面向CVD金刚石的新型微细加工技术,制备高深宽比微光栅结构,是当前亟待解决的一大难题。
发明内容
本发明所要解决的技术问题是,提供一种能够显著提升金刚石微加工的质量和精度的基于氢离子刻蚀反应辅助激光刻蚀的金刚石微加工方法。
本发明所采用的技术方案是:一种基于氢离子刻蚀反应辅助激光刻蚀的金刚石微加工方法,包括如下步骤:
1)对金刚石试样表面进行预处理,去除表面杂质;
2)将激光光束聚焦在预处理后的金刚石试样表面,进行激光辐照处理,将金刚石试样表层金刚石成分诱变为石墨化成分;
3)对经过激光辐照处理的金刚石试样进行氢离子刻蚀反应,将金刚石试样表面经过激光辐照诱变产生的石墨化成分选择性去除,实现对金刚石试样的微加工。
步骤1)中所述的金刚石为单晶金刚石或多晶微米金刚石。
步骤1)中所述的金刚石试样表面粗糙度Ra小于等于10nm。
步骤1)中所述的预处理,是将金刚石试样浸入无水乙醇中超声清洗5min,然后烘干。
步骤2)所述的进行激光辐照处理,所采用的激光能量密度为0.51~1.02J/cm2,脉冲宽度为200fs,重复频率为50MHz,光斑直径为10μm。
步骤2)中诱变为石墨化成分的厚度为0.3~0.7μm,激光光斑的石墨化诱变直径为1~2μm。
步骤3)所述的对经过激光辐照处理的金刚石试样进行氢离子刻蚀反应,反应温度为25~70℃,反应过程中去除深度为0.3~0.7μm、宽度为1~2μm的石墨化成分。
步骤3)中所述完成微加工的金刚石试样表面无破碎崩边及石墨化残留杂质。
本发明的基于氢离子刻蚀反应辅助激光刻蚀的金刚石微加工方法,通过采用激光对金刚石试件表面进行石墨化诱变,随后采用氢离子刻蚀选择性去除金刚石试件表面激光诱变的石墨化成分,避免了常规激光刻蚀过程中金刚石表面出现杂质残留和破碎崩边等损伤,显著提升了金刚石微加工的质量和精度。本发明对促进金刚石材料在太赫兹器件领域的应用具有重要意义。
附图说明
图1是本发明基于氢离子刻蚀反应辅助激光刻蚀的金刚石微加工方法过程的示意图。
具体实施方式
下面结合实施例和附图对本发明的基于氢离子刻蚀反应辅助激光刻蚀的金刚石微加工方法做出详细说明。以下实施例将有助于本领域的技术人员进一步理解本发明,但不以任何形式限制本发明。应当指出的是,对本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进。这些都属于本发明的保护范围。
本发明的基于氢离子刻蚀反应辅助激光刻蚀的金刚石微加工方法,如图1所示,包括如下步骤:
1)对金刚石试样表面进行预处理,去除表面杂质;其中,
所述的金刚石为单晶金刚石或多晶微米金刚石;所述的金刚石试样表面粗糙度Ra小于等于10nm;所述的预处理,是将金刚石试样浸入无水乙醇中超声清洗5min,然后烘干。
2)将激光光束聚焦在预处理后的金刚石试样表面,进行激光辐照处理,将金刚石试样表层金刚石成分诱变为石墨化成分;其中,
所述的进行激光辐照处理,所采用的激光能量密度为0.51~1.02J/cm2,脉冲宽度为200fs,重复频率为50MHz,光斑直径为10μm;所述诱变为石墨化成分的厚度为0.3~0.7μm,激光光斑的石墨化诱变直径为1~2μm。
3)对经过激光辐照处理的金刚石试样进行氢离子刻蚀反应,将金刚石试样表面经过激光辐照诱变产生的石墨化成分选择性去除,实现对金刚石试样的微加工;其中,
所述的对经过激光辐照处理的金刚石试样进行氢离子刻蚀反应,反应温度为25~70℃,反应过程中去除深度为0.3~0.7μm、宽度为1~2μm的石墨化成分。
所述完成微加工的金刚石试样表面无破碎崩边及石墨化残留杂质。
下面给出具体实例。
实例1:
以表面粗糙度为10nm的单晶金刚石试件为对象,进行氢离子刻蚀反应辅助激光刻蚀微加工。首先对单晶金刚石试件进行预处理,将其浸入无水乙醇中超声清洗5min,然后烘干,去除表面杂质。
采用脉冲宽度为200fs、激光能量密度为1.02J/cm2、重复频率为50MHz、光斑直径为10μm的激光,将激光光束聚焦于单晶金刚石试件表面,进行激光辐照处理。激光辐照将单晶金刚石表层金刚石成分又变为石墨化成分,石墨化成分厚度为0.3μm,激光光斑的石墨化诱变直径为1μm。
将上述经过激光辐照处理的单晶金刚石试件置于化学气相沉积反应设备之中,进行氢离子刻蚀反应,其反应温度为70℃,去除单晶金刚石试件表面激光辐照诱变产生的深度为0.3μm、宽度为1μm的石墨化成分。
完成上述微加工过程的单晶金刚石试样表面无破碎崩边及石墨化残留杂质。
实例2:
以表面粗糙度10nm的多晶微米金刚石试件为对象,进行氢离子刻蚀反应辅助激光刻蚀微加工。首先对多晶微米金刚石试件进行预处理,将其浸入浸入无水乙醇中超声清洗5min,然后烘干,去除表面杂质。
采用脉冲宽度为200fs、激光能量密度为0.51J/cm2、重复频率为50MHz、光斑直径为10μm的激光,将激光光束聚焦于多晶微米金刚石试件表面,进行激光辐描处理。激光辐照将多晶微米金刚石表层金刚石成分又变为石墨化成分,石墨化成分厚度为0.7μm,激光光斑的石墨化诱变直径为2μm。
将上述经过激光辐照处理的单晶金刚石试件置于化学气相沉积反应设备之中,进行氢离子刻蚀反应,其反应温度为25℃,去除多晶微米金刚石试件表面激光辐照诱变产生的深度为0.7μm、宽度为2μm的石墨化成分。
完成上述微加工过程的多晶微米金刚石试样表面无破碎崩边及石墨化残留杂质。
实例3:
以表面粗糙度为8nm的单晶金刚石试件为对象,进行氢离子刻蚀反应辅助激光刻蚀微加工。首先对单晶金刚石试件进行预处理,将其浸入无水乙醇中超声清洗5min,然后烘干,去除表面杂质。
采用脉冲宽度为200fs、激光能量密度为0.8J/cm2、重复频率为50MHz、光斑直径为10μm的激光,将激光光束聚焦于单晶金刚石试件表面,进行激光辐照处理。激光辐照将单晶金刚石表层金刚石成分又变为石墨化成分,石墨化成分厚度为0.5μm,激光光斑的石墨化诱变直径为1.5μm。
将上述经过激光辐照处理的单晶金刚石试件置于化学气相沉积反应设备之中,进行氢离子刻蚀反应,其反应温度为50℃,去除单晶金刚石试件表面激光辐照诱变产生的深度为0.5μm、宽度为1.5μm的石墨化成分。
完成上述微加工过程的单晶金刚石试样表面无破碎崩边及石墨化残留杂质。
实例4:
以表面粗糙度8.5nm的多晶微米金刚石试件为对象,进行氢离子刻蚀反应辅助激光刻蚀微加工。首先对多晶微米金刚石试件进行预处理,将其浸入浸入无水乙醇中超声清洗5min,然后烘干,去除表面杂质。
采用脉冲宽度为200fs、激光能量密度为0.71J/cm2、重复频率为50MHz、光斑直径为10μm的激光,将激光光束聚焦于多晶微米金刚石试件表面,进行激光辐描处理。激光辐照将多晶微米金刚石表层金刚石成分又变为石墨化成分,石墨化成分厚度为0.6μm,激光光斑的石墨化诱变直径为1.8μm。
将上述经过激光辐照处理的单晶金刚石试件置于化学气相沉积反应设备之中,进行氢离子刻蚀反应,其反应温度为40℃,去除多晶微米金刚石试件表面激光辐照诱变产生的深度为0.6μm、宽度为1.8μm的石墨化成分。
完成上述微加工过程的多晶微米金刚石试样表面无破碎崩边及石墨化残留杂质。
Claims (8)
1.一种基于氢离子刻蚀反应辅助激光刻蚀的金刚石微加工方法,其特征在于,包括如下步骤:
1)对金刚石试样表面进行预处理,去除表面杂质;
2)将激光光束聚焦在预处理后的金刚石试样表面,进行激光辐照处理,将金刚石试样表层金刚石成分诱变为石墨化成分;
3)对经过激光辐照处理的金刚石试样进行氢离子刻蚀反应,将金刚石试样表面经过激光辐照诱变产生的石墨化成分选择性去除,实现对金刚石试样的微加工。
2.根据权利要求1所述的基于氢离子刻蚀反应辅助激光刻蚀的金刚石微加工方法,其特征在于,步骤1)中所述的金刚石为单晶金刚石或多晶微米金刚石。
3.根据权利要求1所述的基于氢离子刻蚀反应辅助激光刻蚀的金刚石微加工方法,其特征在于,步骤1)中所述的金刚石试样表面粗糙度Ra小于等于10nm。
4.根据权利要求1所述的基于氢离子刻蚀反应辅助激光刻蚀的金刚石微加工方法,其特征在于,步骤1)中所述的预处理,是将金刚石试样浸入无水乙醇中超声清洗5min,然后烘干。
5.根据权利要求1所述的基于氢离子刻蚀反应辅助激光刻蚀的金刚石微加工方法,其特征在于,步骤2)所述的进行激光辐照处理,所采用的激光能量密度为0.51~1.02J/cm2,脉冲宽度为200fs,重复频率为50MHz,光斑直径为10μm。
6.根据权利要求1所述的基于氢离子刻蚀反应辅助激光刻蚀的金刚石微加工方法,其特征在于,步骤2)中诱变为石墨化成分的厚度为0.3~0.7μm,激光光斑的石墨化诱变直径为1~2μm。
7.根据权利要求1所述的基于氢离子刻蚀反应辅助激光刻蚀的金刚石微加工方法,其特征在于,步骤3)所述的对经过激光辐照处理的金刚石试样进行氢离子刻蚀反应,反应温度为25~70℃,反应过程中去除深度为0.3~0.7μm、宽度为1~2μm的石墨化成分。
8.根据权利要求1所述的基于氢离子刻蚀反应辅助激光刻蚀的金刚石微加工方法,其特征在于,步骤3)中所述完成微加工的金刚石试样表面无破碎崩边及石墨化残留杂质。
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