CN113150885B - 一种含氟清洗液组合物 - Google Patents
一种含氟清洗液组合物 Download PDFInfo
- Publication number
- CN113150885B CN113150885B CN202110459926.7A CN202110459926A CN113150885B CN 113150885 B CN113150885 B CN 113150885B CN 202110459926 A CN202110459926 A CN 202110459926A CN 113150885 B CN113150885 B CN 113150885B
- Authority
- CN
- China
- Prior art keywords
- fluorine
- percent
- containing cleaning
- benzotriazole
- cleaning liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 63
- 239000000203 mixture Substances 0.000 title claims abstract description 59
- 229910052731 fluorine Inorganic materials 0.000 title claims abstract description 54
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 239000011737 fluorine Substances 0.000 title claims abstract description 53
- 239000007788 liquid Substances 0.000 title claims abstract description 40
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229920000642 polymer Polymers 0.000 claims abstract description 35
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 claims abstract description 26
- 235000018417 cysteine Nutrition 0.000 claims abstract description 26
- 108010024636 Glutathione Proteins 0.000 claims abstract description 25
- RWSXRVCMGQZWBV-WDSKDSINSA-N glutathione Chemical compound OC(=O)[C@@H](N)CCC(=O)N[C@@H](CS)C(=O)NCC(O)=O RWSXRVCMGQZWBV-WDSKDSINSA-N 0.000 claims abstract description 25
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 34
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 29
- 239000008367 deionised water Substances 0.000 claims description 25
- 229910021641 deionized water Inorganic materials 0.000 claims description 25
- LDZYRENCLPUXAX-UHFFFAOYSA-N 2-methyl-1h-benzimidazole Chemical compound C1=CC=C2NC(C)=NC2=C1 LDZYRENCLPUXAX-UHFFFAOYSA-N 0.000 claims description 24
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 17
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 17
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 16
- VBIXEXWLHSRNKB-UHFFFAOYSA-N ammonium oxalate Chemical compound [NH4+].[NH4+].[O-]C(=O)C([O-])=O VBIXEXWLHSRNKB-UHFFFAOYSA-N 0.000 claims description 16
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 16
- 239000012964 benzotriazole Substances 0.000 claims description 16
- -1 ammonium carboxylate Chemical class 0.000 abstract description 19
- 239000007800 oxidant agent Substances 0.000 abstract description 17
- 239000002738 chelating agent Substances 0.000 abstract description 11
- 230000007797 corrosion Effects 0.000 abstract description 11
- 238000005260 corrosion Methods 0.000 abstract description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract description 10
- 239000003112 inhibitor Substances 0.000 abstract description 10
- 230000001590 oxidative effect Effects 0.000 abstract description 7
- 238000004377 microelectronic Methods 0.000 abstract description 5
- 239000003513 alkali Substances 0.000 abstract description 3
- 239000003795 chemical substances by application Substances 0.000 abstract description 3
- 230000000052 comparative effect Effects 0.000 description 21
- 239000000463 material Substances 0.000 description 17
- 239000000243 solution Substances 0.000 description 16
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 14
- 229960001484 edetic acid Drugs 0.000 description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 10
- GDDNTTHUKVNJRA-UHFFFAOYSA-N 3-bromo-3,3-difluoroprop-1-ene Chemical compound FC(F)(Br)C=C GDDNTTHUKVNJRA-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 150000007530 organic bases Chemical class 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- FCKYPQBAHLOOJQ-UHFFFAOYSA-N Cyclohexane-1,2-diaminetetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)C1CCCCC1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 5
- 229960001231 choline Drugs 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 4
- 238000004380 ashing Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 4
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 4
- 239000001393 triammonium citrate Substances 0.000 description 4
- 235000011046 triammonium citrate Nutrition 0.000 description 4
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 229940078916 carbamide peroxide Drugs 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 3
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 3
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 description 2
- OSVXSBDYLRYLIG-UHFFFAOYSA-N chlorine dioxide Inorganic materials O=Cl=O OSVXSBDYLRYLIG-UHFFFAOYSA-N 0.000 description 2
- 229910001914 chlorine tetroxide Inorganic materials 0.000 description 2
- PZZHMLOHNYWKIK-UHFFFAOYSA-N eddha Chemical compound C=1C=CC=C(O)C=1C(C(=O)O)NCCNC(C(O)=O)C1=CC=CC=C1O PZZHMLOHNYWKIK-UHFFFAOYSA-N 0.000 description 2
- 229950007919 egtazic acid Drugs 0.000 description 2
- DEFVIWRASFVYLL-UHFFFAOYSA-N ethylene glycol bis(2-aminoethyl)tetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)CCOCCOCCN(CC(O)=O)CC(O)=O DEFVIWRASFVYLL-UHFFFAOYSA-N 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 125000005207 tetraalkylammonium group Chemical group 0.000 description 2
- LESFYQKBUCDEQP-UHFFFAOYSA-N tetraazanium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound N.N.N.N.OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O LESFYQKBUCDEQP-UHFFFAOYSA-N 0.000 description 2
- DFQPZDGUFQJANM-UHFFFAOYSA-M tetrabutylphosphanium;hydroxide Chemical compound [OH-].CCCC[P+](CCCC)(CCCC)CCCC DFQPZDGUFQJANM-UHFFFAOYSA-M 0.000 description 2
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 2
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 2
- KYVBNYUBXIEUFW-UHFFFAOYSA-N 1,1,3,3-tetramethylguanidine Chemical compound CN(C)C(=N)N(C)C KYVBNYUBXIEUFW-UHFFFAOYSA-N 0.000 description 1
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 1
- FYIHPNCKLYPALH-UHFFFAOYSA-N 2-[2-(2-aminophenoxy)ethenoxy]aniline Chemical compound NC1=CC=CC=C1OC=COC1=CC=CC=C1N FYIHPNCKLYPALH-UHFFFAOYSA-N 0.000 description 1
- RILZRCJGXSFXNE-UHFFFAOYSA-N 2-[4-(trifluoromethoxy)phenyl]ethanol Chemical compound OCCC1=CC=C(OC(F)(F)F)C=C1 RILZRCJGXSFXNE-UHFFFAOYSA-N 0.000 description 1
- KWIPUXXIFQQMKN-UHFFFAOYSA-N 2-azaniumyl-3-(4-cyanophenyl)propanoate Chemical compound OC(=O)C(N)CC1=CC=C(C#N)C=C1 KWIPUXXIFQQMKN-UHFFFAOYSA-N 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- GDGIVSREGUOIJZ-UHFFFAOYSA-N 5-amino-3h-1,3,4-thiadiazole-2-thione Chemical compound NC1=NN=C(S)S1 GDGIVSREGUOIJZ-UHFFFAOYSA-N 0.000 description 1
- BDDLHHRCDSJVKV-UHFFFAOYSA-N 7028-40-2 Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O BDDLHHRCDSJVKV-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 description 1
- 239000005695 Ammonium acetate Substances 0.000 description 1
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 1
- 239000004251 Ammonium lactate Substances 0.000 description 1
- 239000004475 Arginine Substances 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- 108010053070 Glutathione Disulfide Proteins 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 description 1
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 1
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 1
- LFTLOKWAGJYHHR-UHFFFAOYSA-N N-methylmorpholine N-oxide Chemical compound CN1(=O)CCOCC1 LFTLOKWAGJYHHR-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- WDLRUFUQRNWCPK-UHFFFAOYSA-N Tetraxetan Chemical compound OC(=O)CN1CCN(CC(O)=O)CCN(CC(O)=O)CCN(CC(O)=O)CC1 WDLRUFUQRNWCPK-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910001515 alkali metal fluoride Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- CBTVGIZVANVGBH-UHFFFAOYSA-N aminomethyl propanol Chemical compound CC(C)(N)CO CBTVGIZVANVGBH-UHFFFAOYSA-N 0.000 description 1
- 229940043376 ammonium acetate Drugs 0.000 description 1
- 235000019257 ammonium acetate Nutrition 0.000 description 1
- 229940090948 ammonium benzoate Drugs 0.000 description 1
- BVCZEBOGSOYJJT-UHFFFAOYSA-N ammonium carbamate Chemical compound [NH4+].NC([O-])=O BVCZEBOGSOYJJT-UHFFFAOYSA-N 0.000 description 1
- 239000001099 ammonium carbonate Substances 0.000 description 1
- 235000012501 ammonium carbonate Nutrition 0.000 description 1
- KHPLPBHMTCTCHA-UHFFFAOYSA-N ammonium chlorate Chemical compound N.OCl(=O)=O KHPLPBHMTCTCHA-UHFFFAOYSA-N 0.000 description 1
- VZTDIZULWFCMLS-UHFFFAOYSA-N ammonium formate Chemical compound [NH4+].[O-]C=O VZTDIZULWFCMLS-UHFFFAOYSA-N 0.000 description 1
- 229940059265 ammonium lactate Drugs 0.000 description 1
- 235000019286 ammonium lactate Nutrition 0.000 description 1
- 235000019395 ammonium persulphate Nutrition 0.000 description 1
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 description 1
- 125000000637 arginyl group Chemical group N[C@@H](CCCNC(N)=N)C(=O)* 0.000 description 1
- NHJPVZLSLOHJDM-UHFFFAOYSA-N azane;butanedioic acid Chemical compound [NH4+].[NH4+].[O-]C(=O)CCC([O-])=O NHJPVZLSLOHJDM-UHFFFAOYSA-N 0.000 description 1
- ZRDJERPXCFOFCP-UHFFFAOYSA-N azane;iodic acid Chemical compound [NH4+].[O-]I(=O)=O ZRDJERPXCFOFCP-UHFFFAOYSA-N 0.000 description 1
- RZOBLYBZQXQGFY-HSHFZTNMSA-N azanium;(2r)-2-hydroxypropanoate Chemical compound [NH4+].C[C@@H](O)C([O-])=O RZOBLYBZQXQGFY-HSHFZTNMSA-N 0.000 description 1
- NGPGDYLVALNKEG-UHFFFAOYSA-N azanium;azane;2,3,4-trihydroxy-4-oxobutanoate Chemical compound [NH4+].[NH4+].[O-]C(=O)C(O)C(O)C([O-])=O NGPGDYLVALNKEG-UHFFFAOYSA-N 0.000 description 1
- YUUVAZCKXDQEIS-UHFFFAOYSA-N azanium;chlorite Chemical compound [NH4+].[O-]Cl=O YUUVAZCKXDQEIS-UHFFFAOYSA-N 0.000 description 1
- URGYLQKORWLZAQ-UHFFFAOYSA-N azanium;periodate Chemical compound [NH4+].[O-]I(=O)(=O)=O URGYLQKORWLZAQ-UHFFFAOYSA-N 0.000 description 1
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-N carbonic acid monoamide Natural products NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- TVWHTOUAJSGEKT-UHFFFAOYSA-N chlorine trioxide Chemical compound [O]Cl(=O)=O TVWHTOUAJSGEKT-UHFFFAOYSA-N 0.000 description 1
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- KYQODXQIAJFKPH-UHFFFAOYSA-N diazanium;2-[2-[bis(carboxymethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [NH4+].[NH4+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O KYQODXQIAJFKPH-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- YPZRWBKMTBYPTK-BJDJZHNGSA-N glutathione disulfide Chemical compound OC(=O)[C@@H](N)CCC(=O)N[C@H](C(=O)NCC(O)=O)CSSC[C@@H](C(=O)NCC(O)=O)NC(=O)CC[C@H](N)C(O)=O YPZRWBKMTBYPTK-BJDJZHNGSA-N 0.000 description 1
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 229940102253 isopropanolamine Drugs 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- YPZRWBKMTBYPTK-UHFFFAOYSA-N oxidized gamma-L-glutamyl-L-cysteinylglycine Natural products OC(=O)C(N)CCC(=O)NC(C(=O)NCC(O)=O)CSSCC(C(=O)NCC(O)=O)NC(=O)CCC(N)C(O)=O YPZRWBKMTBYPTK-UHFFFAOYSA-N 0.000 description 1
- AENSXLNDMRQIEX-UHFFFAOYSA-L oxido sulfate;tetrabutylazanium Chemical compound [O-]OS([O-])(=O)=O.CCCC[N+](CCCC)(CCCC)CCCC.CCCC[N+](CCCC)(CCCC)CCCC AENSXLNDMRQIEX-UHFFFAOYSA-L 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 150000003509 tertiary alcohols Chemical class 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- LUVHDTDFZLTVFM-UHFFFAOYSA-M tetramethylazanium;chlorate Chemical compound [O-]Cl(=O)=O.C[N+](C)(C)C LUVHDTDFZLTVFM-UHFFFAOYSA-M 0.000 description 1
- FDXKBUSUNHRUIZ-UHFFFAOYSA-M tetramethylazanium;chlorite Chemical compound [O-]Cl=O.C[N+](C)(C)C FDXKBUSUNHRUIZ-UHFFFAOYSA-M 0.000 description 1
- ZRVXFJFFJZFRLQ-UHFFFAOYSA-M tetramethylazanium;iodate Chemical compound [O-]I(=O)=O.C[N+](C)(C)C ZRVXFJFFJZFRLQ-UHFFFAOYSA-M 0.000 description 1
- ZCWKIFAQRXNZCH-UHFFFAOYSA-M tetramethylazanium;perchlorate Chemical compound C[N+](C)(C)C.[O-]Cl(=O)(=O)=O ZCWKIFAQRXNZCH-UHFFFAOYSA-M 0.000 description 1
- HLQAWDQQEJSALG-UHFFFAOYSA-M tetramethylazanium;periodate Chemical compound C[N+](C)(C)C.[O-]I(=O)(=O)=O HLQAWDQQEJSALG-UHFFFAOYSA-M 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XKWFRVVFRZYIFP-UHFFFAOYSA-N triazanium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxymethyl)amino]acetate Chemical compound N.N.N.OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O XKWFRVVFRZYIFP-UHFFFAOYSA-N 0.000 description 1
- IJGSGCGKAAXRSC-UHFFFAOYSA-M tris(2-hydroxyethyl)-methylazanium;hydroxide Chemical compound [OH-].OCC[N+](C)(CCO)CCO IJGSGCGKAAXRSC-UHFFFAOYSA-M 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/722—Ethers of polyoxyalkylene glycols having mixed oxyalkylene groups; Polyalkoxylated fatty alcohols or polyalkoxylated alkylaryl alcohols with mixed oxyalkylele groups
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/042—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2082—Polycarboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/28—Heterocyclic compounds containing nitrogen in the ring
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/32—Amides; Substituted amides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/33—Amino carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3942—Inorganic per-compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3945—Organic per-compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
本发明公开了一种含氟清洗液组合物。该含氟清洗液组合物包括下述质量分数的组分:10%‑30%的氧化剂、0.001‑0.01%的还原型谷胱甘肽、0.001%‑0.25%的半胱氨酸、1%‑5%的氟化物、1%‑5%的有机碱、0.01%‑2%的螯合剂、0.01%‑2%的缓蚀剂、0.5%‑3%的羧酸铵、0.01%‑1%的EO‑PO聚合物L31、0.01%‑2%的钝化剂和水,水补足余量;各组分质量分数之和为100%。本发明的含氟清洗液组合物可选择性地除去微电子器件上的硬遮罩,具有良好的应用前景。
Description
技术领域
本发明涉及一种含氟清洗液组合物,并且更具体地涉及使用清洗液组合物用于从包含低介电常数介电材料、TEOS、铜、钴和其它低介电常数介电材料的此类芯片或晶圆上选择性移除含有TiN、TaN、TiNxOy、或Ti的硬遮罩、和Ti的合金的硬遮罩、以及其它残留物的组合物。
背景技术
在芯片制造技术中,铜互联等离子刻蚀后残余物清洗液以含氟清洗液组合物为主。随着技术节点的不断前进,越来越多的材料被引入,如钴、钛、钨、氮化钛等金属材料,以及低k介质材料等,进而对传统的含氟清洗液组合物与多种材料的兼容性形成挑战。
等离子干蚀刻常用于在铜(Cu)/低介电常数双镶嵌制造工艺中制造垂直侧壁沟槽和各向异性互连通路。随着技术节点发展至45nm及更小(比如28-14nm),半导体设备尺寸的缩小使得达到通路与沟槽的精准轮廓控制更具挑战性。集成电路制造公司正在研究利用各种硬遮罩来改善对低介电常数材料的蚀刻选择性,从而获得更佳的轮廓控制。硬遮罩材料(例如Ti、TiN、氧氮化硅或其类似物)在发挥蚀刻保护作用后需移除,在移除硬遮罩材料的清洗工艺中,需对其他金属及介电材料进行保护,因此对传统的含氟清洗液组合物与多种材料的兼容性形成挑战。
开发兼容性强的选择性移除硬遮罩的清洗液成为本领域亟待解决的一个问题。
发明内容
本发明所要解决的技术问题是克服现有的含氟清洗液组合物选择性移除硬遮罩较差的缺陷,而提供一种含氟清洗液组合物。相对于微电子器件的层间介电材料和金属互联材料,本发明的含氟清洗液组合物对硬遮罩具有优秀的选择性且对等离子刻蚀后残余物和灰化后残余物清洗效果佳。
本发明通过以下技术方案解决上述技术问题的。
本发明提供了一种含氟清洗液组合物,其包含下述质量分数的组分:10%-30%的氧化剂、0.001-0.01%的还原型谷胱甘肽、0.001%-0.25%的半胱氨酸、1%-5%的氟化物、1%-5%的有机碱、0.01%-2%的螯合剂、0.01%-2%的缓蚀剂、0.5%-3%的羧酸铵、0.01%-1%的EO-PO聚合物L31、0.01%-2%的钝化剂和水,水补足余量;各组分质量分数之和为100%。
各组分的质量分数为各组分中的质量占所述的含氟清洗液组合物中所有组分总质量的质量百分比。
所述的含氟清洗液组合物优选不含有含胺类物质氧化剂稳定剂。所述的含胺类物质氧化剂稳定剂可以为胺类化合物(例如伯胺、仲胺、叔胺或者含有这些胺的醇类化合物)、醇胺类化合物(例如三乙醇胺、N-甲基乙醇胺、N,N-二甲基二甘醇胺)或胺-N-氧化合物(例如N-甲基吗啉氧化物)。
所述的含氟清洗液组合物中,所述的氧化剂的质量分数可以为10-15%,还可以为15-30%。
所述的含氟清洗液组合物中,所述的氧化剂可以为本领域常规的氧化剂,优选为过氧化氢(H2O2)、过氧化苯甲酰、过氧单硫酸四丁铵、臭氧、氯化铁、高锰酸盐、过硼酸盐、高氯酸盐、过硫酸盐、过氧二硫酸铵、过乙酸、过氧化脲、硝酸(HNO3)、亚氯酸铵(NH4ClO2)、氯酸铵(NH4ClO3)、碘酸铵(NH4IO3)、过硼酸铵(NH4BO3)、高氯酸铵(NH4ClO4)、高碘酸铵(NH4IO3)、过硫酸铵((NH4)2S2O8)、亚氯酸四甲铵((N(CH3)4)ClO2)、氯酸四甲铵((N(CH3)4)ClO3)、碘酸四甲铵((N(CH3)4)IO3)、过硼酸四甲铵((N(CH3)4)BO3)、高氯酸四甲铵((N(CH3)4)ClO4)、高碘酸四甲铵((N(CH3)4)IO4)、过硫酸四甲铵((N(CH3)4)S2O8)、过氧尿素((CO(NH2)2)H2O2)和过氧乙酸(CH3(CO)OOH)中的一种或多种;更优选为过氧化氢、过氧化脲和过氧乙酸中的一种或多种;最优选为过氧乙酸。
所述的含氟清洗液组合物中,所述的还原型谷胱甘肽的质量分数可以为0.005%-0.01%。
所述的含氟清洗液组合物中,所述的半胱氨酸的质量分数可以为0.15-0.25%。
所述的含氟清洗液组合物中,所述的氟化物的质量分数可以为1%-2.5%,还可以为2.5-5%。
所述的含氟清洗液组合物中,所述的氟化物可以为本领域常规的氟化物,优选为氟化氢、氟化铵、氟化钾、碱金属氟化物、四烷基氟化铵、氟硼酸、四氟硼酸铵、碱金属四氟硼酸盐、四氟硼酸四烷基铵和四氟硼酸三甲基氧鎓中的一种或多种,更优选为氟化氢。
所述的含氟清洗液组合物中,所述的有机碱的质量分数可以为1.0-2.5%,还可以为2.5%-5%。
所述的含氟清洗液组合物中,所述的有机碱可以为本领域常规的有机碱,优选为四甲基氢氧化铵、四丙基氢氧化铵、四丁基氢氧化铵、四乙基氢氧化铵(TEAH)、苄基三甲基氢氧化铵(BTAH)、胆碱、(2-羟基乙基)三甲基氢氧化铵、三(2-羟乙基)甲基氢氧化铵、单乙醇胺(MEA)、二甘醇胺(DGA)、三乙醇胺(TEA)、异丁醇胺、异丙醇胺、四丁基氢氧化鏻(TBPH)、四甲基胍中的一种或多种;更优选为四甲基氢氧化铵、四丙基氢氧化铵、四丁基氢氧化铵、四乙基氢氧化铵和胆碱中的一种或多种,最优选四甲基氢氧化铵和/或胆碱。
所述的含氟清洗液组合物中,所述的螯合剂的质量分数可以为0.01-1%,还可以为1-2%。
所述的含氟清洗液组合物中,所述的螯合剂可以为本领域常规的螯合剂,优选为1,2-环己二胺-N,N,N',N'-四乙酸(CDTA)、乙二胺四乙酸、次氮基三乙酸、二亚乙基三胺五乙酸、1,4,7,10-四氮杂环十二烷-1,4,7,10-四乙酸、乙二醇四乙酸(EGTA)、1,2-双(邻氨基苯氧基)乙烷-N,N,N',N'-四乙酸、N-{2-[双(羧甲基)氨基]乙基}-N-(2-羟乙基)甘氨酸(HEDTA)、乙二胺-N,N'-双(2-羟基苯乙酸)(EDDHA)、二氧杂八亚甲基二氮基四乙酸(DOCTA)、和三亚乙基四胺六乙酸(TTHA)中的一种或多种,更优选1,2-环己二胺-N,N,N',N'-四乙酸和/或乙二胺四乙酸。
所述的含氟清洗液组合物中,所述的缓蚀剂的质量分数可以为0.01-0.5%,还可以为0.5-2%。
所述的含氟清洗液组合物中,所述的缓蚀剂可以是本领域常规的缓蚀剂,优选为苯并***(BTA)、甲苯***、5-苯基-苯并***、5-硝基-苯并***、3-氨基-5-巯基-1,2,4-***、1-氨基-1,2,4-***、羟苯并***、2-(5-氨基-戊基)-苯并***、1-氨基-1,2,3-***、1-氨基-5-甲基-1,2,3-***、3-氨基-1,2,4-***、3-巯基-1,2,4-***、3-异丙基-1,2,4-***、5-苯硫醇-苯并***、卤代-苯并***(卤素=F、Cl、Br或I)、萘并***、2-巯基苯并咪唑(MBI)、2-巯基苯并噻唑、4-甲基-2-苯基咪唑、2-巯基噻唑啉、5-氨基四唑、5-氨基四唑一水合物、5-氨基-1,3,4-噻二唑-2-硫醇、2,4-二氨基-6-甲基-1,3,5-三嗪、噻唑、三嗪、甲基四唑、1,3-二甲基-2-咪唑啉酮、1,5-五亚甲基四唑、1-苯基-5-巯基四唑、二氨基甲基三嗪、咪唑啉硫酮、巯基苯并咪唑、4-甲基-4H-1,2,4-***-3-硫醇、5-氨基-1,3,4-噻二唑-2-硫醇和苯并噻唑中的一种或多种,更优选苯并***和/或甲苯***;最优选苯并***。
所述的含氟清洗液组合物中,所述的羧酸铵的质量分数可以为0.5-1%,还可以为1-3%。
所述的含氟清洗液组合物中,所述的羧酸铵可以为本领域常规的羧酸铵,优选草酸铵、乳酸铵、酒石酸铵、柠檬酸三铵、乙酸铵、氨基甲酸铵、碳酸铵、苯甲酸铵、乙二胺四乙酸铵、乙二胺四乙酸二铵、乙二胺四乙酸三铵、乙二胺四乙酸四铵、琥珀酸铵、甲酸铵和1-H-吡唑-3-甲酸铵中的一种或多种,更优选草酸铵和/或柠檬酸三铵。
所述的含氟清洗液组合物中,所述的EO-PO聚合物L31的质量分数可以为0.01-0.05%,还可以为0.05-1.0%。
所述的含氟清洗液组合物中,所述的钝化剂可为1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑)。
所述的含氟清洗液组合物中,所述的钝化剂的质量分数可以为0.01-0.7%,还可以为0.7-2%。
所述的含氟清洗液组合物中,所述水优选为去离子水。
在某一优选技术方案中,所述的含氟清洗液组合物,其包括下述质量分数的组分:10-30%的氧化剂、0.05-0.01%的还原型谷胱甘肽、0.15-0.25%的半胱氨酸、1-5%的氟化氢、1-5%的有机碱、0.01-2%的螯合剂、0.01-2%的缓蚀剂、0.5-3%的羧酸铵、0.01-1%的EO-PO聚合物L31、0.01-2%的1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑)和水,水补足余量;
所述的氧化剂为过氧化氢、过氧化脲和过氧乙酸中一种或多种;
所述的有机碱为四甲基氢氧化铵和/或胆碱;
所述的螯合剂为1,2-环己二胺-N,N,N',N'-四乙酸和/或乙二胺四乙酸;
所述的缓蚀剂为苯并***和/或甲苯***;
所述的羧酸铵为草酸铵和/或柠檬酸三铵。
在某一优选技术方案中,所述的含氟清洗液组合物,其包括下述质量分数的组分:10-20%的过氧乙酸、0.001-0.01%的还原型谷胱甘肽、0.02-0.25%的半胱氨酸、1.5-3.5%的氟化氢、1.5-3.5%的四甲基氢氧化铵、0.5-1.5%的乙二胺四乙酸、0.1-1%的苯并***、0.5-1.5%的草酸铵、0.01-0.1%的EO-PO聚合物L31、0.1-1%的1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑)和水,水补足余量。
在某一优选技术方案中,所述的含氟清洗液组合物,其包括下述质量分数的组分任一组合:
组合1:15%的过氧化氢、0.005%的还原型谷胱甘肽、0.25%的半胱氨酸、2.5%的氟化氢、2.5%的四甲基氢氧化铵、1.0%的乙二胺四乙酸、0.5%的苯并***、1.0%的草酸铵、0.05%的EO-PO聚合物L31、0.7%的1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑)和去离子水,去离子水补足余量;
组合2:10%的过氧化氢、0.01%的还原型谷胱甘肽、0.15%的半胱氨酸、1.0%的氟化氢、1.0%的四甲基氢氧化铵、0.01%的乙二胺四乙酸、0.01%的苯并***、0.5%的草酸铵、0.01%的EO-PO聚合物L31、0.01%的1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑)和去离子水,去离子水补足余量;
组合3:30%的过氧化氢、0.01%的还原型谷胱甘肽、0.25%的半胱氨酸、5.0%的氟化氢、5.0%的四甲基氢氧化铵、2.0%的乙二胺四乙酸、2.0%的苯并***、3.0%的草酸铵、1.0%的EO-PO聚合物L31、2.0%的1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑)和水,去离子水补足余量;
组合4:15%的过氧化氢、0.005%的还原型谷胱甘肽、0.25%半的胱氨酸、2.5%的氟化氢、2.5%的四甲基氢氧化铵、1.0%的乙二胺四乙酸、0.5%的苯并***、1.0%的草酸铵、0.05%的EO-PO聚合物L31、0.7%的1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑)和去离子水,去离子水补足余量;
组合5:30%的过氧化氢、0.01%的还原型谷胱甘肽、0.15%的半胱氨酸、2.5%的氟化氢、5.0%的四甲基氢氧化铵、2.0%的乙二胺四乙酸、2.0%的苯并***、3.0%的草酸铵、1.0%的EO-PO聚合物L31、2.0%的1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑)和去离子水,去离子水补足余量;
组合6:15%的过氧化脲、0.005%的还原型谷胱甘肽、0.25%的半胱氨酸、2.5%的氟化氢、2.5%的四甲基氢氧化铵、1.0%的乙二胺四乙酸、0.5%的苯并***、1.0%的草酸铵、0.05%的EO-PO聚合物L31、0.7%的1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑)和去离子水,去离子水补足余量;
组合7:15%的过氧乙酸、0.005%的还原型谷胱甘肽、0.25%的半胱氨酸、2.5%的氟化氢、2.5%的四甲基氢氧化铵、1.0%的乙二胺四乙酸、0.5%的苯并***、1.0%的草酸铵、0.05%的EO-PO聚合物L31、0.7%的1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑)和去离子水,去离子水补足余量;
组合8:15%的过氧化氢、0.005%的还原型谷胱甘肽、0.25%的半胱氨酸、2.5%的氟化氢、2.5%的胆碱、1.0%的乙二胺四乙酸、0.5%的苯并***、1.0%的草酸铵、0.05%的EO-PO聚合物L31、0.7%的1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑)和去离子水,去离子水补足余量;
组合9:15%的过氧化氢、0.005%的还原型谷胱甘肽、0.25%的半胱氨酸、2.5%的氟化氢、2.5%的四甲基氢氧化铵、1.0%的1,2-环己二胺-N,N,N',N'-四乙酸、0.5%的苯并***、1.0%的草酸铵、0.05%的EO-PO聚合物L31、0.7%的1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑)和去离子水,去离子水补足余量;
组合10:15%的过氧化氢、0.005%的还原型谷胱甘肽、0.25%的半胱氨酸、2.5%的氟化氢、2.5%的四甲基氢氧化铵、1.0%的乙二胺四乙酸、0.5%的甲苯***、1.0%的草酸铵、0.05%的EO-PO聚合物L31、0.7%的1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑)和去离子水,去离子水补足余量;
组合11:15%的过氧化氢、0.005%的还原型谷胱甘肽、0.25%的半胱氨酸、2.5%的氟化氢、2.5%的四甲基氢氧化铵、1.0%的乙二胺四乙酸、0.5%的苯并***、1.0%的柠檬酸三铵、0.05%的EO-PO聚合物L31、0.7%的1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑)和去离子水,去离子水补足余量。
所述的含氟清洗液组合物,其由下述质量分数的组分组成:上述的氧化剂、上述的还原型谷胱甘肽、上述的半胱氨酸、上述的氟化物、上述的有机碱、上述的螯合剂、上述的缓蚀剂、上述的羧酸铵、上述的EO-PO聚合物L31、上述的1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑)和上述的水。
上述的氧化剂、上述的还原型谷胱甘肽、上述的半胱氨酸、上述的氟化物、上述的有机碱、上述的螯合剂、上述的缓蚀剂、上述的羧酸铵、上述的EO-PO聚合物L31、上述的1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑)和上述的水均包括组分的种类和含量。本发明的各组分可采用分装的形式,在使用时临时混合即可;优选将上述的氧化剂单独分装为组分A,所述的氧化剂以外的组分混合包装为组分B,在使用时将AB混合即可。
本发明还提供了一种试剂盒,所述的试剂盒包含在一个或多个容器,所述的容器内含有形成含氟清洗液组合物的各个组分混合的一组份、各组分独立的多组份或将各组分分成若干组的多组份;
所述的组分为所述的氧化剂、所述的还原型谷胱甘肽、所述的半胱氨酸、所述的氟化物、所述的有机碱、所述的螯合剂、所述的缓蚀剂、所述的羧酸铵、所述的EO-PO聚合物L31、所述的1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑)和所述的水。
优选,所述的氧化剂单独置于其中一个容器中。
本发明还提供了一种上述的含氟清洗液组合物的制备方法,其包括如下步骤,将上述的组分混合,得到所述的含氟清洗液组合物。
其中,所述的混合的方式优选将所述的组分中的固体组分加入到液体组分中,搅拌均匀,即可。
其中,所述的混合的温度可为室温。
本发明还提供了一种上述的含氟清洗液组合物在清洗微电子器件上的等离子体蚀刻后残余物、灰化后残余物和硬遮罩材料中一种或多种的应用。
所述的微电子器件优选硅晶片。
所述的硬遮罩材料优选为含Ti材料、含TiN材料、含TaN材料、含TiNxOy材料或者Ti合金。
所述的应用中,优选采用将所述的微电子器件浸渍在所述的含氟清洗液组合物中。所述的浸渍的时间可以为5-30min。所述的浸渍的温度可以为45-60℃。
在不违背本领域常识的基础上,上述各优选条件,可任意组合,即得本发明各较佳实例。
本发明中1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑)为自制,其按照专利CN106188103B中的实施例2制得;其它试剂和原料均市售可得,其中EO-PO聚合物L81、EO-PO聚合物L42、EO-PO聚合物L62和EO-PO聚合物L31均购买自南通锦莱化工有限公司。
本发明的积极进步效果在于:本发明的含氟清洗液组合物具有高度地选择性移除TiN、TaN、TiNxOy、Ti硬遮罩和Ti合金的硬遮罩,且对等离子刻蚀后残余物和灰化后残余物清洗效果佳。
具体实施方式
下面通过实施例的方式进一步说明本发明,但并不因此将本发明限制在所述的实施例范围之中。下列实施例中未注明具体条件的实验方法,按照常规方法和条件,或按照商品说明书选择。
下述实施例中,未限定具体操作温度的,均是指在室温条件下进行。室温是指10-30℃。
将本发明的含氟清洗液组合物的组分:氧化剂、还原型谷胱甘肽、半胱氨酸、氟化物、有机碱、螯合剂、缓蚀剂、羧酸铵、EO-PO聚合物L31、1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑)和去离子水的种类和含量分别列于表1和表2中。
本发明的含氟清洗液组合物按照表1和2中的组分和含量,将固体组分加入到液体组分中,并搅拌均匀,得到含氟清洗液组合物。
表1
表2
对比例1-15的含氟清洗液组合物按照下述的组分和含量,将固体组分加入到液体组分中,并搅拌均匀,得到含氟清洗液组合物。
以下对比例1-15是基于实施例1进行的组分的种类或含量的筛选。
对比例1
将实施例1中组分还原型谷胱甘肽替换为氧化型谷胱甘肽,其它不变。
对比例2
去除实施例1中组分还原型谷胱甘肽,其它不变。
对比例3
去除实施例1中组分半胱氨酸,其它不变。
对比例4
将实施例1中组分半胱氨酸替换为精氨酸,其它不变。
对比例5
将实施例1中组分半胱氨酸替换为组氨酸,其它不变。
对比例6
去除实施例1中组分EO-PO聚合物L31,其它不变。
对比例7
去除实施例1中组分1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑),其它不变。
对比例8
去除实施例1中组分羧酸铵,其它不变。
对比例9
将除实施例1中组分EO-PO聚合物L31替换为EO-PO聚合物L42,其它不变。
对比例10
将除实施例1中组分EO-PO聚合物L31替换为EO-PO聚合物L62,其它不变。
对比例11
将实施例1中组分EO-PO聚合物L31替换为EO-PO聚合物L81,其它不变。
对比例12
去除实施例1中组分缓蚀剂,其它不变。
对比例13
将实施例1中氧化剂的含量替换为9%,其它不变。
对比例14
将实施例1中还原型谷胱甘肽的含量替换为0.02%,其它不变。
对比例15
将实施例1中半胱氨酸的含量替换为0.40%,其它不变。
对比例16
将实施例1中EO-PO聚合物L31的含量替换为0.0005%,其它不变。
对比例17
将实施例1中1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑)的含量替换为0.0005%,其他不变。
对比例18
将实施例1中EO-PO聚合物L31的含量替换为1.1%,其它不变。
对比例19
将实施例1中1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑)的含量替换为2.1%,其他不变。
效果实施例
1、刻蚀速率
表3
表4
备注:表中的“TiN”为PVD(Physical Vapor Deposition)物理气相沉积TiN。
表3中,本发明的含氟清洗液组合物对硅晶片上的AlNxOy、氮化铝、W、铜、TEOS、BD2、SiCN以及钴的刻蚀速率极低,均小于几乎不腐蚀器件上互联材料;而不在本申请范围内的含氟清洗液组合物对上述的材料刻蚀速率最高可达约
表4中,本发明的含氟清洗液组合物对硅晶片上到的Ti、TiN、TaN和TiNxOy的刻蚀速率极高,均大于能快速地去除硬罩掩膜;而不在本申请范围内的含氟清洗液组合物对上述的材料刻蚀速率极低,最高才最低的仅有
结合表3和4,本发明的含氟清洗液组合物对硅晶片上的Ti、TiN、TaN和TiNxOy具有较高的刻蚀选择性,相对于表3中的器件上互联材料,以TiN/Cu为例,其选择比至少在242:1以上。
2、清洗效果
清洗效果分四个等级:A-观察不到残留物;B-观察到极少量残留物;C-观察到少量残留物;D-观察到有明显较多残留物。
腐蚀效果分四个等级:A-相容性佳,无底切;B-有极轻微底切;C-有少量底切;D-底切较为明显和严重。
表5
可见,本发明的含氟清洗液组合物对等离子刻蚀后残余物和灰化后残余物的图案化晶片清洗效果佳且与金属线兼容性佳。
Claims (2)
1.一种含氟清洗液组合物,其由下述质量分数的组分组成:15%的过氧化氢、0.005%的还原型谷胱甘肽、0.25%的半胱氨酸、2.5%的氟化氢、2.5%的四甲基氢氧化铵、1.0%的乙二胺四乙酸、0.5%的苯并***、1.0%的草酸铵、0.05%的EO-PO聚合物L31、0.7%的1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑)和去离子水,去离子水补足余量。
2.一种试剂盒,其特征在于,所述的试剂盒包含一个或多个容器,所述的容器内含有形成含如权利要求1所述的氟清洗液组合物的各个组分混合的一组分、各组分独立的多组份或将各组分分成若干组的多组份;
所述的组分为15%的过氧化氢、0.005%的还原型谷胱甘肽、0.25%的半胱氨酸、2.5%的氟化氢、2.5%的四甲基氢氧化铵、1.0%的乙二胺四乙酸、0.5%的苯并***、1.0%的草酸铵、0.05%的EO-PO聚合物L31、0.7%的1-(苯并三氮唑-1-甲基)-1-(2-甲基苯并咪唑)和去离子水,去离子水补足余量。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110459926.7A CN113150885B (zh) | 2021-04-27 | 2021-04-27 | 一种含氟清洗液组合物 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110459926.7A CN113150885B (zh) | 2021-04-27 | 2021-04-27 | 一种含氟清洗液组合物 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113150885A CN113150885A (zh) | 2021-07-23 |
CN113150885B true CN113150885B (zh) | 2022-11-01 |
Family
ID=76871432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110459926.7A Active CN113150885B (zh) | 2021-04-27 | 2021-04-27 | 一种含氟清洗液组合物 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113150885B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115558557B (zh) * | 2022-11-03 | 2024-05-24 | 上海新阳半导体材料股份有限公司 | 一种清洗液组合物的制备方法 |
CN115710536B (zh) * | 2022-11-11 | 2024-03-08 | 上海新阳半导体材料股份有限公司 | 一种清洗液的制备方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6242351B1 (en) * | 1999-12-27 | 2001-06-05 | General Electric Company | Diamond slurry for chemical-mechanical planarization of semiconductor wafers |
JP2002048795A (ja) * | 2000-07-31 | 2002-02-15 | Mitsubishi Chemicals Corp | オリゴペプチド残基を結合してなる半導体超微粒子 |
TWI479549B (zh) * | 2009-12-16 | 2015-04-01 | United Microelectronics Corp | 去除蝕刻殘留物之方法 |
JP6088295B2 (ja) * | 2013-03-07 | 2017-03-01 | ローム・アンド・ハース電子材料株式会社 | スズ合金めっき液 |
KR102008882B1 (ko) * | 2013-08-02 | 2019-08-09 | 동우 화인켐 주식회사 | 웨이퍼 다이싱용 세정제 조성물 |
JP6555273B2 (ja) * | 2014-11-13 | 2019-08-07 | 三菱瓦斯化学株式会社 | タングステンを含む材料のダメージを抑制した半導体素子の洗浄液、およびこれを用いた半導体素子の洗浄方法 |
CN106753836A (zh) * | 2015-11-19 | 2017-05-31 | 赖婷婷 | 一种晶圆背面清洗液 |
CN106188103B (zh) * | 2016-07-14 | 2017-10-13 | 河南中医学院 | 一种含多个配位点的氮杂环过渡金属铜配合物、制备方法及应用 |
US11017995B2 (en) * | 2018-07-26 | 2021-05-25 | Versum Materials Us, Llc | Composition for TiN hard mask removal and etch residue cleaning |
CN108822141B (zh) * | 2018-07-27 | 2020-10-02 | 河南中医药大学 | 一种含苯并三氮唑环的氮杂环过渡金属铜配合物及其制备方法和应用 |
JP2020188090A (ja) * | 2019-05-13 | 2020-11-19 | Jsr株式会社 | コバルトを含む基板を処理するための半導体洗浄用または化学機械研磨用組成物 |
-
2021
- 2021-04-27 CN CN202110459926.7A patent/CN113150885B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN113150885A (zh) | 2021-07-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN113186044B (zh) | 一种含氟清洗液组合物的制备方法 | |
CN113150884B (zh) | 一种含氟清洗液组合物的制备方法 | |
CN113186043B (zh) | 一种含氟清洗液组合物及其应用 | |
CN105612599B (zh) | 用于选择性移除硬遮罩的移除组合物 | |
US9416338B2 (en) | Composition for and method of suppressing titanium nitride corrosion | |
TWI651396B (zh) | 選擇性蝕刻氮化鈦之組成物及方法 | |
CN113150885B (zh) | 一种含氟清洗液组合物 | |
JP2015512971A (ja) | 組成物を使用したcmp後除去及び使用方法 | |
CN107121901A (zh) | 一种富水基清洗液组合物 | |
CN113430072A (zh) | 移除硬遮罩的钴兼容性半水基清洗液、其制备方法及应用 | |
US8481472B2 (en) | Aqueous acidic formulations for copper oxide etch residue removal and prevention of copper electrodeposition | |
CN113161234B (zh) | 一种含氟清洗液组合物的应用 | |
CN113430063B (zh) | 用于选择性移除硬遮罩的清洗液、其制备方法及应用 | |
CN115558557B (zh) | 一种清洗液组合物的制备方法 | |
CN115725369B (zh) | 一种清洗液组合物的应用 | |
CN115678693B (zh) | 一种清洗液组合物及试剂盒 | |
CN117625316A (zh) | 一种含氟清洗液组合物的制备方法 | |
CN117625315A (zh) | 一种含氟清洗液组合物及其应用 | |
CN113430060B (zh) | 用于移除硬遮罩的钨相容性清洗液、其制备方法及应用 | |
CN113430066B (zh) | 用于选择性移除硬遮罩的清洗组合物、其制备方法及应用 | |
TW201730326A (zh) | 具有優異基材相容性及卓越浴穩定性之經酸性半水性氟化物活化的抗反射塗層清潔劑 | |
CN113528255A (zh) | 一种化学清洗液及其使用方法 | |
CN115895792A (zh) | 一种清洗液及试剂盒 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |