CN113119327B - Directional multi-line cutting method capable of improving <111> crystal orientation crystal bar cutting warp value - Google Patents

Directional multi-line cutting method capable of improving <111> crystal orientation crystal bar cutting warp value Download PDF

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CN113119327B
CN113119327B CN202110446789.3A CN202110446789A CN113119327B CN 113119327 B CN113119327 B CN 113119327B CN 202110446789 A CN202110446789 A CN 202110446789A CN 113119327 B CN113119327 B CN 113119327B
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赵延祥
历莉
刘波
程博
王忠保
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Ningxia Zhongxin Wafer Semiconductor Technology Co ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
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    • B28—WORKING CEMENT, CLAY, OR STONE
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    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
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    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
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Abstract

The invention provides a method for improving<111>Orientation of crystal orientation crystal bar cutting warp valueA multi-line cutting method belongs to the technical field of monocrystalline silicon slicing. In that<111>In the crystal direction at a predetermined rotation angle theta 0 Cutting is performed at the predetermined rotation angle theta 0 Is 0 DEG + -5 DEG, 60 DEG + -5 DEG or-60 DEG + -5 deg. The method can obviously reduce the warp value of the silicon wafer, obviously reduce the warp value fluctuation among batches, and is favorable for improving the surface orientation precision of the silicon wafer.

Description

Directional multi-wire cutting method capable of improving <111> crystal orientation crystal bar cutting warp value
Technical Field
The invention belongs to the technical field of monocrystalline silicon slicing, and particularly relates to a directional multi-wire cutting method capable of improving a <111> crystal orientation crystal bar cutting warp value.
Background
The multi-wire cutting has the characteristics of high efficiency, low cost and capability of well adapting to the increasing diameter of the silicon single crystal rod, is widely applied to the processing of silicon wafers, and becomes the most important means in the processing of the silicon wafers. In the slicing process, important parameters such as warp, TTV, BOW, local flatness and the like of the silicon wafer need to be controlled, the slice warp value obtained by the traditional multi-line cutting mode is large, and the slice warp value fluctuation among batches is large.
A multi-wire cutting mode with a fixed crystal orientation is beneficial to improving a warp value of a monocrystalline silicon slice, for example, a Chinese patent with a patent number of 201711037057.9 discloses a fixed crystal orientation multi-wire cutting process for <111> type monocrystalline silicon, wherein six crystal orientation positions of <111> type monocrystalline silicon in the radial direction of [1-10], [ -110], [01-1], [0-11], [10-1], [ -110] are determined by an X-ray orientation instrument, then in a rod bonding process, a single crystal rod is rotated to enable any one crystal orientation to be vertical to a rod bonding support for bonding, and during cutting, a cutting wire can cut along the crystal orientation direction. By the method, the warp value of the monocrystalline silicon slice can be reduced by about 4-8 mu m.
However, during the process of single crystal pulling, crystal orientation deviation exists, so that a blade can cut into the silicon wafer from any rotation angle during multi-line cutting, although the warp value of the silicon wafer is reduced to a certain extent, the warp value is unstable, the warp value fluctuation of multiple batches of silicon wafers is large, the surface orientation precision of the silicon wafers cannot be effectively guaranteed, and the silicon wafer yield is reduced due to the general industrial requirement that the surface orientation deviation is easily greater than 0.29 degrees.
Disclosure of Invention
In view of the above, the invention provides a directional multi-line cutting method capable of improving a <111> crystal orientation crystal bar cutting warp value, so as to solve the technical problems that in the prior art, when a monocrystalline silicon slice is cut in from any rotation angle, the silicon slice warp value fluctuates greatly among batches, and the plane orientation precision cannot be guaranteed.
The technical scheme adopted by the invention for solving the technical problems is as follows:
can improve<111>A directional multi-wire cutting method for a warp value of crystal orientation crystal bar cutting, which comprises the following steps of<111>In the crystal direction at a predetermined rotation angle theta 0 Cutting is performed at the predetermined rotation angle theta 0 Is 0 DEG + -5 DEG, 60 DEG + -5 DEG or-60 DEG + -5 deg.
Preferably, the directional multi-wire cutting method capable of improving the <111> crystal orientation crystal bar cutting warp value comprises the following steps:
a. selecting a reference surface;
b. acquiring the crystal orientation deviation degree of the <111> crystal orientation;
c. calculating the measured rotation angle theta of the crystal bar according to the crystal orientation deviation degree 1 And measuring the swing angle beta 1 ；
d. From the measured rotation angle theta 1 And a predetermined rotation angle theta 0 Calculating a supplementary swing angle delta beta;
e. according to determination of the swing angle beta 1 Calculating the actual swing angle beta from the compensated swing angle delta beta 0 ；
f. According to a predetermined rotation angle theta 0 From the actual pivot angle beta 0 The ingot is rotated, followed by fixing, and slicing is completed.
Preferably, in step e, the "is based on determining the swing angle β 1 Calculating the actual swing angle beta with the supplementary swing angle delta beta 0 "comprises the following steps:
e1. from the measured rotation angle theta 1 And a predetermined rotation angle theta 0 Determining the rotation direction;
e2. calculating the actual swing angle beta 0 ：
If the direction of rotation is clockwise, then β 0 ＝β 1 +Δβ；
If the direction of rotation is counterclockwise, then β 0 ＝β 1 -Δβ。
Preferably, in step e1, the "is based on the measured rotation angle θ 1 And a predetermined rotation angle theta 0 Determining the direction of rotation "comprises the steps of:
separately calculating the measured rotation angles theta 1 To a predetermined angle of rotation theta to be selected 01 、θ 02 、θ 03 Difference Δ θ of 01 、Δθ 02 、Δθ 03 ；
Compare | Δ θ 01 |、|Δθ 02 |、|Δθ 03 At | Δ θ | 01 |、|Δθ 02 |、|Δθ 03 The preset rotation angle to be selected corresponding to the minimum value in | is used as the preset rotation angle theta 0 (ii) a Wherein, theta 01 、θ 02 、θ 03 Respectively 0 ° ± 5 °, 60 ° ± 5 ° or-60 ° ± 5 °;
from the measured rotation angle theta 1 And a selected predetermined angle of rotation theta 0 And determining the rotation direction.
Preferably, in step f, "according to a predetermined rotation angle θ 0 From the actual pivot angle beta 0 Rotating the ingot and then fixing comprises the following steps:
f1. according to a predetermined rotation angle theta 0 From the actual pivot angle beta 0 Rotating the crystal bar, and then fixing;
f2. judging whether the orientation of the wafer surface is qualified or not; if the wafer surface orientation is qualified, carrying out curing slicing; and if the wafer surface orientation is unqualified, degumming the crystal bar, repeating the steps a-f, and fixing the crystal bar again.
According to the technical scheme, the directional multi-wire cutting method capable of improving the warp value of the <111> crystal orientation crystal bar cutting has the advantages that: when the <111> crystal orientation crystal bar is directionally cut, the directional cutting is carried out at a preset rotation angle of 0 +/-5 degrees, 60 +/-5 degrees or-60 +/-5 degrees, the cutting mode can obviously reduce the warp value of the silicon wafer, obviously reduce the warp value fluctuation among batches, and is beneficial to improving the surface orientation precision of the silicon wafer, and the surface orientation precision of the silicon wafer can be kept about 0.1 degrees.
Drawings
FIG. 1 is a graph showing the warp value distribution of wafers from the same batch after improvement.
FIG. 2 is a line graph showing the warp value fluctuation box of lots of silicon wafers after improvement.
FIG. 3 is a comparison of warp value fluctuation boxed graphs of multi-batch silicon wafers before and after improvement.
Detailed Description
The technical scheme and the technical effect of the invention are further elaborated in the following by combining the drawings of the invention.
In one embodiment, a method of improving<111>A directional multi-wire cutting method for a warp value of crystal orientation crystal bar cutting, which comprises the following steps of<111>In the crystal direction at a predetermined rotation angle theta 0 Cutting is performed at the predetermined rotation angle theta 0 Is 0 DEG + -5 DEG, 60 DEG + -5 DEG or-60 DEG + -5 deg. The predetermined rotation angle theta 0 For the rotation angle with respect to the reference plane, the reference plane is generally the notch plane of the single crystal silicon ingot.
Specifically, the directional multi-wire cutting method capable of improving the cutting warp value of the <111> crystal orientation crystal bar comprises the following steps of:
a. and selecting a reference surface. Generally, the notch plane of a monocrystalline silicon ingot is taken as a reference plane.
b. The degree of crystal orientation deviation of the <111> crystal orientation is obtained. And acquiring the crystal orientation deviation degree of the monocrystalline silicon crystal rod, namely the deviation angle of the <111> crystal orientation of the monocrystalline silicon crystal rod and the axis of the monocrystalline silicon crystal rod by using the X-ray orientation instrument.
c. Calculating the measured rotation angle theta of the crystal bar according to the crystal orientation deviation degree 1 And measuring the swing angle beta 1 . From the degree of deviation of the crystal orientation, the measurement rotation angle theta of the relative crystal orientation deviation can be calculated 1 And determining the pivot angle beta 1 The calculation process is conventional and will not be described herein.
Due to measurement of the rotation angle theta 1 To a predetermined angle of rotation theta 0 With a certain deviation, if necessary at a predetermined angle of rotation theta 0 When the following cutting is performed, the swing angle beta needs to be measured 1 Making an adjustment to the cutting direction<110>The direction of crystal orientation is vertical. In particular to the measurement of the swing angle beta 1 The adjustment process of (2) is as follows:
d. from the measured rotation angle theta 1 And a predetermined rotation angle theta 0 And calculating a supplementary swing angle delta beta.
Specifically, the method comprises the following steps:
e1. from the measured rotation angle theta 1 And a predetermined rotation angle theta 0 And determining the rotation direction.
e2. Calculating the actual swing angle beta 0 : if the direction of rotation is clockwise, then β 0 ＝β 1 + Δ β; if the direction of rotation is counterclockwise, then β 0 ＝β 1 -Δβ。
In particular, the "is based on a measured rotation angle θ 1 And a predetermined rotation angle theta 0 Determining the direction of rotation "comprises the steps of:
respectively calculating the measured rotation angles theta 1 To a predetermined angle of rotation theta to be selected 01 、θ 02 、θ 03 Difference of (a) delta theta 01 、Δθ 02 、Δθ 03 (ii) a Wherein, theta 01 、θ 02 、θ 03 Respectively 0 degrees +/-5 degrees, 60 degrees +/-5 degrees or-60 degrees +/-5 degrees.
Comparison of | Δ θ 01 |、|Δθ 02 |、|Δθ 03 At | Δ θ | 01 |、|Δθ 02 |、|Δθ 03 The preset rotation angle to be selected corresponding to the minimum value in | is used as the preset rotation angle theta 0 (ii) a From the measured rotation angle theta 1 And a selected predetermined angle of rotation theta 0 And determining the rotation direction.
f. According to a predetermined angle of rotation theta 0 Angle of oscillation beta to the real 0 The ingot is rotated, followed by fixing, and slicing is completed.
In one embodiment, measured according to an X-ray orientation<111>The measured rotation angle theta is calculated from the degree of deviation of the crystal orientation 1 Is 15 degrees and the swing angle is-1.821 degrees. From the measured rotation angle theta 1 It can be seen that the rotation angle is rotated in the direction of 0 ° ± 5 °, the adjustment range is small, and the adjustment error is small. Thus, the rotation angle theta is predetermined 0 Is selected to be 5 ° (theoretically, at a predetermined rotation angle θ) 0 The rotation angle theta is optimally selected at 0 degrees, and in practical operation, the predetermined rotation angle theta can be limited by practical factors 0 Selected as 5 °). At this time, the supplementary pivot angle Δ β = -0.011 °.
When the rotation angle is clockwise rotation in the process of rotating from 15 degrees to 5 degrees, then beta is 0 ＝β 1 +Δβ＝-1.821°+(-0.011)＝-1.832°。
When the ingot was bonded, the ingot was bonded at a rotation angle of 5 ℃ and a swing angle of-1.832 ℃.
Referring to fig. 1, fig. 1 shows the warp value distribution of silicon wafers obtained by slicing a single crystal silicon ingot by the method of the above example, and it can be seen from fig. 1 that the warp values of silicon wafers of the same batch are concentrated around 5 μm and the maximum value is not more than 10 μm, which significantly reduces the warp value of silicon wafers of the same batch.
Referring to table 1 and fig. 2, 10 sets of monocrystalline silicon ingots were then processed to complete wire slicing under the same process conditions, according to the method of the present embodiment, and the specific data are shown in table 1.
TABLE 1 comparison of rotation angle and swing angle before and after adjustment of group 10 of single crystal silicon ingots
Figure BDA0003037242140000061
The warp value distribution of silicon wafers obtained after 10 groups of monocrystalline silicon crystal bars are cut is counted, as shown in fig. 2, the average warp value among batches is 5-9 microns, and the average value is about 6 microns. It can be seen that by the process of the present invention, the warp value distribution between batches is significantly reduced.
Referring to fig. 3 together, by comparing the method provided by the chinese invention patent No. 201711037057.9, through statistical comparison of multiple batches, the method provided by the present invention not only significantly reduces the average warp value of silicon wafers, controls the warp value of the silicon wafers to be between 5 μm and 9 μm, but also significantly reduces the warp value distribution, and improves the yield of the silicon wafers.
Meanwhile, by adopting the traditional process method, the problem of uncontrollable silicon wafer surface azimuth precision is necessarily faced while the warp value of the silicon wafer is reduced. When the method provided by the invention is used for cutting the polycrystalline silicon crystal bar in a multi-line manner, the warp value of the silicon wafer can be reduced, the surface orientation precision of the silicon wafer can be controlled within 0.1 degree, and the qualified rate of the silicon wafer is further improved.
In one embodiment, in step f, "according to a predetermined rotation angle θ 0 From the actual pivot angle beta 0 Rotating the ingot, followed by fixing "comprises the steps of:
f1. according to a predetermined rotation angle theta 0 From the actual pivot angle beta 0 Rotating the crystal bar, and then fixing;
f2. judging whether the orientation of the wafer surface is qualified or not; if the wafer surface orientation is qualified, carrying out curing slicing; and if the wafer surface orientation is unqualified, degumming the crystal bar, repeating the steps a-f, and fixing the crystal bar again.
And detecting the crystal orientation of the crystal bar after the completion of the following, judging whether the following is accurate, and if the following is not accurate, then carrying out the following again to ensure the qualified rate of the silicon wafer.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.

Claims (2)

1. Can improve<111>The directional multiline cutting method of the warp value of the crystal orientation crystal bar is characterized in that<111>In the crystal direction at a predetermined rotation angle theta 0 Cutting is performed at the predetermined rotation angle theta 0 Is 0 DEG + -5 DEG, 60 DEG + -5 DEG or-60 DEG + -5 DEG;
the method comprises the following steps:
a. selecting a reference plane, the predetermined rotation angle theta 0 The rotation angle is relative to a reference surface, and the reference surface is a notch surface of the monocrystalline silicon crystal rod;
b. acquiring the crystal orientation deviation degree of the <111> crystal orientation, namely the deviation angle of the <111> crystal orientation of the monocrystalline silicon crystal bar and the axis of the monocrystalline silicon crystal bar;
c. calculating the measured rotation angle theta of the crystal bar according to the crystal orientation deviation degree 1 And measuring the swing angle beta 1 ；
d. From the measured rotation angle theta 1 And a predetermined rotation angle theta 0 Calculating a supplementary swing angle delta beta;
e. according to determination of the swing angle beta 1 Calculating the actual swing angle beta with the supplementary swing angle delta beta 0 ；
f. According to a predetermined angle of rotation theta 0 From the actual pivot angle beta 0 Rotating the crystal bar, fixing and slicing; in step e, the process proceeds according to the determined swing angle beta 1 Calculating the actual swing angle beta from the compensated swing angle delta beta 0 "comprises the following steps:
e1. from the measured rotation angle theta 1 And a predetermined rotation angle theta 0 Determining the rotation direction;
e2. calculating the actual swing angle beta 0 ：
If the direction of rotation is clockwise, then β 0 ＝β 1 +Δβ；
If the direction of rotation is counterclockwise, then β 0 ＝β 1 -Δβ；
In step e1, the "measurement of the rotation angle θ 1 And a predetermined rotation angle theta 0 Determining the direction of rotation "comprises the steps of:
respectively calculating the measured rotation angles theta 1 With a predetermined angle of rotation theta to be selected 01 、θ 02 、θ 03 Difference Δ θ of 01 、Δθ 02 、Δθ 03 (ii) a Comparison of Delta theta 01 、Δθ 02 、Δθ 03 At Δ θ 01 、Δθ 02 、Δθ 03 The predetermined rotation angle to be selected corresponding to the minimum value in (a) is set as the predetermined rotation angle θ 0 (ii) a Wherein, theta 01 、θ 02 、θ 03 Respectively is 0 degree +/-5 degrees, 60 degrees +/-5 degrees or-60 degrees +/-5 degrees; according to the measuring rotationAngle of rotation theta 1 And a selected predetermined angle of rotation theta 0 And determining the rotation direction.
2. Can be improved as claimed in claim 1<111>The directional multi-wire cutting method for the warp value of the crystal orientation crystal bar is characterized in that in the step f, according to a preset rotation angle theta 0 From the actual pivot angle beta 0 Rotating the ingot and then fixing comprises the following steps:
f1. according to a predetermined angle of rotation theta 0 Angle of oscillation beta to the real 0 Rotating the crystal bar, and then fixing;
f2. judging whether the orientation of the wafer surface is qualified or not; if the wafer surface orientation is qualified, carrying out curing slicing; and if the wafer surface orientation is unqualified, degumming the crystal bar, repeating the steps a-f, and fixing the crystal bar again.
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DE19825050C2 (en) * 1998-06-04 2002-06-13 Wacker Siltronic Halbleitermat Method for arranging and orienting single crystals for cutting off wafers on a wire saw having a wire frame
DE19825051A1 (en) * 1998-06-04 1999-12-09 Wacker Siltronic Halbleitermat Method and device for producing a cylindrical single crystal and method for separating semiconductor wafers
CN102152410A (en) * 2010-12-23 2011-08-17 万向硅峰电子股份有限公司 Cutting method for adjusting crystal orientation excursion by rotating single crystal rod
CN107599196A (en) * 2017-10-30 2018-01-19 中国电子科技集团公司第四十六研究所 It is a kind of<111>Type monocrystalline silicon determines crystal orientation multi-line cutting process
CN110065171B (en) * 2019-04-25 2021-12-24 西安奕斯伟材料科技有限公司 Cutting device and crystal bar cutting method
CN111361030B (en) * 2020-04-24 2021-11-23 西安奕斯伟材料科技有限公司 Multi-wire cutting device and multi-wire cutting method

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