CN113113464B - 一种半导体器件及其制造方法 - Google Patents
一种半导体器件及其制造方法 Download PDFInfo
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- CN113113464B CN113113464B CN202010035212.9A CN202010035212A CN113113464B CN 113113464 B CN113113464 B CN 113113464B CN 202010035212 A CN202010035212 A CN 202010035212A CN 113113464 B CN113113464 B CN 113113464B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 266
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 claims description 24
- 238000005468 ion implantation Methods 0.000 claims description 18
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 230000005669 field effect Effects 0.000 abstract description 25
- 230000005684 electric field Effects 0.000 description 13
- 230000008569 process Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (12)
Priority Applications (1)
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CN202010035212.9A CN113113464B (zh) | 2020-01-13 | 2020-01-13 | 一种半导体器件及其制造方法 |
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CN202010035212.9A CN113113464B (zh) | 2020-01-13 | 2020-01-13 | 一种半导体器件及其制造方法 |
Publications (2)
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CN113113464A CN113113464A (zh) | 2021-07-13 |
CN113113464B true CN113113464B (zh) | 2023-03-10 |
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CN202010035212.9A Active CN113113464B (zh) | 2020-01-13 | 2020-01-13 | 一种半导体器件及其制造方法 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102184964A (zh) * | 2011-05-12 | 2011-09-14 | 西安电子科技大学 | N沟道积累型SiC IEMOSFET器件及制备方法 |
CN104282766A (zh) * | 2014-11-06 | 2015-01-14 | 株洲南车时代电气股份有限公司 | 一种新型碳化硅mosfet及其制造方法 |
JP2017098371A (ja) * | 2015-11-20 | 2017-06-01 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
CN109616523A (zh) * | 2018-11-27 | 2019-04-12 | 中国科学院微电子研究所 | 一种4H-SiC MOSFET功率器件及其制造方法 |
WO2019225567A1 (ja) * | 2018-05-23 | 2019-11-28 | 三菱電機株式会社 | 炭化珪素半導体装置および電力変換装置 |
WO2019242036A1 (zh) * | 2018-06-22 | 2019-12-26 | 中国电子科技集团公司第五十五研究所 | 一种碳化硅金属氧化物半导体场效应晶体管及其制造方法 |
-
2020
- 2020-01-13 CN CN202010035212.9A patent/CN113113464B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102184964A (zh) * | 2011-05-12 | 2011-09-14 | 西安电子科技大学 | N沟道积累型SiC IEMOSFET器件及制备方法 |
CN104282766A (zh) * | 2014-11-06 | 2015-01-14 | 株洲南车时代电气股份有限公司 | 一种新型碳化硅mosfet及其制造方法 |
JP2017098371A (ja) * | 2015-11-20 | 2017-06-01 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
WO2019225567A1 (ja) * | 2018-05-23 | 2019-11-28 | 三菱電機株式会社 | 炭化珪素半導体装置および電力変換装置 |
WO2019242036A1 (zh) * | 2018-06-22 | 2019-12-26 | 中国电子科技集团公司第五十五研究所 | 一种碳化硅金属氧化物半导体场效应晶体管及其制造方法 |
CN109616523A (zh) * | 2018-11-27 | 2019-04-12 | 中国科学院微电子研究所 | 一种4H-SiC MOSFET功率器件及其制造方法 |
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Address after: 200441 room b1703, floor 17, building 1, No. 2816, Yixian Road, Baoshan District, Shanghai Applicant after: Qingchun semiconductor (Shanghai) Co.,Ltd. Address before: 200441 room b1703, floor 17, building 1, No. 2816, Yixian Road, Baoshan District, Shanghai Applicant before: Sizhen Zhicheng semiconductor technology (Shanghai) Co.,Ltd. |
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Address after: Building 42#, No. 136 Yuhai East Road, Hangzhou Bay New District, Ningbo City, Zhejiang Province 315336 Applicant after: Pure Semiconductor (Ningbo) Co.,Ltd. Address before: 200441 room b1703, floor 17, building 1, No. 2816, Yixian Road, Baoshan District, Shanghai Applicant before: Qingchun semiconductor (Shanghai) Co.,Ltd. |
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