CN113113203A - 磁性粉末 - Google Patents
磁性粉末 Download PDFInfo
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- CN113113203A CN113113203A CN202010691087.7A CN202010691087A CN113113203A CN 113113203 A CN113113203 A CN 113113203A CN 202010691087 A CN202010691087 A CN 202010691087A CN 113113203 A CN113113203 A CN 113113203A
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- insulating coating
- magnetic powder
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- metal particles
- magnetic metal
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- 239000006247 magnetic powder Substances 0.000 title claims abstract description 51
- 239000002923 metal particle Substances 0.000 claims abstract description 36
- 229910052718 tin Inorganic materials 0.000 claims abstract description 16
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- 239000011248 coating agent Substances 0.000 claims description 87
- 238000000576 coating method Methods 0.000 claims description 87
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 229910008423 Si—B Inorganic materials 0.000 claims description 4
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims description 4
- 239000011135 tin Substances 0.000 abstract description 35
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 4
- 239000011574 phosphorus Substances 0.000 abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 3
- 239000011247 coating layer Substances 0.000 abstract description 3
- 239000001301 oxygen Substances 0.000 abstract description 3
- 239000011521 glass Substances 0.000 description 22
- 238000009413 insulation Methods 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 239000010410 layer Substances 0.000 description 8
- 230000035699 permeability Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 239000011324 bead Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000006121 base glass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
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- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/12—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
- H01F1/33—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials mixtures of metallic and non-metallic particles; metallic particles having oxide skin
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- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/032—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials
- H01F1/04—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys
- H01F1/06—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys in the form of particles, e.g. powder
- H01F1/061—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys in the form of particles, e.g. powder with a protective layer
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Abstract
本公开提供了一种磁性粉末,所述磁性粉末包括:磁性金属颗粒,包含铁(Fe);以及绝缘涂层,设置在所述磁性金属颗粒的表面上,并包含锡(Sn)、磷(P)和氧(O)。
Description
本申请要求于2020年1月9日在韩国知识产权局提交的第10-2020-0003324号韩国专利申请的优先权的权益,该韩国专利申请的公开内容通过引用包含于此。
技术领域
本公开涉及一种磁性粉末以及包括该磁性粉末的线圈组件。
背景技术
在无源元件中,线圈组件可包括线圈部和围绕线圈部的主体,其中,主体可形成为包含磁性粉末颗粒。
在这种情况下,当磁性粉末颗粒包含磁性金属颗粒时,具有饱和磁化值高的优点。然而,为了减小高频带中的涡流损耗,应确保主体中包含的磁性金属颗粒之间的绝缘。
此外,为了确保这种绝缘,可在磁性金属颗粒的表面上形成绝缘涂层。在这种情况下,需要即使在低剪切力的情况下也通过使绝缘涂层形成为薄且均匀的来改善主体的填充率和磁导率。
发明内容
本公开的一方面在于提供一种磁性粉末,该磁性粉末包含包括铁(Fe)的磁性金属颗粒和设置在磁性金属颗粒的表面上并包括锡(Sn)、磷(P)和氧(O)的绝缘涂层。
本公开的一方面在于提供一种磁性粉末,该磁性粉末包含包括铁(Fe)的磁性金属颗粒和设置在磁性金属颗粒的表面上并包括锡(Sn)、磷(P)、锌(Zn)和氧(O)的绝缘涂层。
本公开的另一方面在于提供一种包含这种磁性粉末的线圈组件。
根据本公开的一方面,绝缘涂层形成为薄且均匀的,从而确保主体的填充率和磁导率以及确保绝缘。
附图说明
通过下面结合附图的详细描述,本公开的以上和其他方面、特征和优点将被更清楚地理解,在附图中:
图1是示意性地示出根据本公开的示例1的线圈组件的透视图;
图2是图1的沿线I-I'截取的线圈组件的截面图;
图3是根据示例1的包括在主体中的磁性粉末的一部分的截面图;
图4是根据示例1的变型示例的包括在主体中的磁性粉末的一部分的截面图;
图5A和图5B是常规线圈组件中的磁性粉末的绝缘涂层的低倍扫描电子显微镜(SEM)的图像;
图6A和图6B是根据示例1的磁性粉末的绝缘涂层的低倍扫描电子显微镜(SEM)的图像;以及
图7A和图7B是根据示例1的变型示例的磁性粉末的绝缘涂层的低倍扫描电子显微镜(SEM)的图像。
具体实施方式
在下文中,参照本公开的元件的术语是考虑到各个元件的功能而命名的,因此不应被理解为限制本公开的技术元件。除非上下文另外明确指出,否则如这里所使用的,单数形式也可包括复数形式。此外,如这里所使用的,术语“包括”、“具有”及它们的同义词表示某些特征、数字、步骤、操作、元件、组件或它们的组合,并且不应解释为排除一个或更多个其他特征、数字、步骤、操作、元件、组件或它们的组合的存在或添加的可能性。另外,将理解的是术语“在……上”并不一定意味着任何元件基于重力方向位于上侧,而是意味着任何元件位于目标部分的上方或下方。
在整个说明书中,将理解的是,当将元件或层称为“连接到”或“结合到”另一元件或层时,可将其理解为“直接连接”或“直接结合”到所述另一元件或层,或者可存在中间元件或中间层。将进一步理解的是,术语“包括”、“包含”和/或它们的变型指定元件的存在,但不排除一个或更多个其他元件的存在或添加。
为了便于说明,呈现了在附图中示出的每个组件的尺寸和厚度,并且本公开不必限于此。
在附图中,表述“X方向”可指“第一方向”或“长度方向”,表述“Y方向”可指“第二方向”或“宽度方向”,而表述“Z方向”可指“第三方向”或“厚度方向”。
用于描述参数(诸如包括但不限于“长度”、“宽度”、“厚度”、“直径”、“距离”、“间隙”和/或“尺寸”的元件的一维尺寸、包括但不限于“面积”和/或“尺寸”的元件的二维尺寸、包括但不限于“体积”和/或“尺寸”的元件的三维尺寸)的值以及元件的性能(包括但不限于“粗糙度”、“密度”、“重量”、“重量比”和/或“摩尔比”)可通过本公开中描述的方法和/或工具来获得。然而,本公开不限于此。即使没有在本公开中描述,也可使用本领域普通技术人员所理解的其他方法和/或工具。
在下文中,将参照附图描述根据本公开的示例的线圈组件。相同或相应的组件被赋予相同的附图标记,并且将不进一步说明。
可理解的是,在电子装置中使用了各种电子组件。就此而言,为了消除噪声或出于其他目的,可在电子组件中适当地使用各种线圈组件。
换句话说,在电子装置中的线圈组件可用作功率电感器、高频(HF)电感器、普通磁珠、高频(GHz)磁珠、共模滤波器等。
磁性粉末
示例1
图3是示出根据示例1的主体的磁性粉末的示意图。
基于图3,根据本示例性实施例的磁性粉末120包含磁性金属颗粒121和绝缘涂层122。
磁性金属颗粒121没有特别限制,只要其具有磁性即可。当磁性粉末形成为包含金属的颗粒时,饱和磁通密度高并且即使在高电流下也可防止L(电感)值降低。
例如,磁性金属颗粒121可包含从由铁(Fe)基合金组成的组中选择的至少一种材料。在磁性金属颗粒121利用Fe基合金形成的情况下,磁性金属颗粒可具有高的饱和磁化强度。Fe基合金可以是非晶合金或纳米晶合金。
通过添加除Fe以外的至少一种合金元素而获得的Fe基合金具有金属的特性。合金元素没有特别限制,只要其可增加电阻、改善磁导率并改善在高频带中使用的电阻率(specific resistance)即可。例如,合金元素可包括磷(P)、硼(B)、硅(Si)、碳(C)、铝(Al)、铬(Cr)和钼(Mo)中的至少一种。
尽管不受限制,但是Fe基合金可以是例如Fe-Si-B基非晶合金或Fe-Si-B基纳米晶合金。在Fe基合金利用非晶合金或纳米晶合金形成的情况下,磁性金属颗粒的电阻率可增加,从而使得当将其应用于线圈组件时容易在高频带中使用。
尽管没有限制,但是磁性金属颗粒121的粒径可以是1μm至100μm。下面将描述绝缘涂层122;然而,根据本示例性实施例,即使当磁性金属颗粒121具有1μm至100μm的小粒径时,也可通过将绝缘涂层122形成为薄且均匀的来改善主体100的磁导率。使用本领域技术人员所了解的扫描电子显微镜(SEM)测量磁性金属颗粒121的粒径。当使用扫描电子显微镜(SEM)时,通过将放大倍率设定为1000倍至5000倍来测量磁性金属颗粒121的粒径。
基于图3,包含Sn、P和O的绝缘涂层122设置在磁性金属颗粒121的表面上。
根据本示例性实施例,绝缘涂层122可包含Sn作为添加剂。在本实施例中,P2O5基玻璃作为绝缘涂层122的主成分。在包围磁性金属颗粒121的绝缘涂层122中使用包含Sn作为添加剂的玻璃,可形成薄且均匀的绝缘涂层122。也就是说,在常规线圈组件中,通常使用包含Zn、B、钒(V)或其他元素的玻璃作为形成绝缘涂层122的材料,以确保其绝缘性能。此外,在本示例性实施例中,使用了相对于这种常规玻璃具有较低玻璃化转变温度(Tg)的包含Sn的玻璃,使得即使在施加了相对较小的剪切力时也可形成绝缘涂层122。因此,绝缘涂层122形成为与常规绝缘涂层相比更薄并且更均匀,从而在改善主体100的填充系数和磁导率的同时确保绝缘性能。
根据示例性实施例,绝缘涂层122可包含硅(Si)。在这种情况下,绝缘涂层122包含Si和O以改善与磁性金属颗粒121的结合力。由于包含在绝缘涂层122中的P和Si的组合,为包含P的绝缘涂层122保证进一步的绝缘性能。
作为包含Sn的玻璃的示例,绝缘涂层122可包含SnO-P2O5。在这种情况下,基于磁性粉末120的总重量,磁性粉末可包含约0.2重量%(wt%)的量的绝缘涂层122。例如,基于磁性粉末120的总重量,绝缘涂层122可包含约0.2重量%(wt%)的量的SnO-P2O5。也就是说,绝缘涂层122可形成的较薄。基于绝缘涂层的总重量,在本示例性实施例中的绝缘涂层122可包含15wt%至30wt%的Sn以及10wt%至25wt%的P。当Sn的量小于15wt%时,难以充分获得主体100的填充系数和磁导率。Sn的量超过30wt%使得由于包含Sn的玻璃的多孔结构而难以保持玻璃的形状,从而不能获得足够的绝缘性能。当P的量小于10wt%时,难以使玻璃以期望的水平非晶化(amorphize),而P的量超过25wt%导致难以确保期望的绝缘性能。此外,基于绝缘涂层的总重量,绝缘涂层122可包含3wt%至10wt%的硅。当Si的含量小于3wt%时,不能确保期望的绝缘性能,而Si的含量超过10wt%使得难以使玻璃以期望的水平非晶化。
此外,对于具有其中不包含Sn的绝缘涂层122的常规线圈组件,难以将绝缘涂层形成为均匀的,从而引起不能容易实现组件的特性的问题。图5A和图5B是常规线圈组件的其中不包含Sn的绝缘涂层122的低倍扫描电子显微镜(SEM)的图像,并且图6A和图6B是本公开的实施例的其中包含在15wt%至30wt%的范围内的量的Sn的绝缘涂层122的低倍SEM的图像。基于图5A和图5B,作为使用低倍扫描电子显微镜(SEM)观察的结果,绝缘涂层122的最小厚度为约9.3nm,并且绝缘涂层122的最大厚度为约38nm。此外,在图6A和图6B中描绘的本示例性实施例中的绝缘涂层122的厚度可以是15nm至25nm。基于图6A和图6B,作为使用低倍SEM观察的结果,绝缘涂层122的最小厚度为约16nm,并且绝缘涂层122的最大厚度为约23nm。在这种情况下,绝缘涂层122的厚度偏差可以是约10nm至约20nm。换句话说,在本示例性实施例中,绝缘涂层122通过包含Sn而形成为薄且均匀。在图6A和图6B中所描绘的本示例性实施例中,绝缘涂层的厚度为15nm至25nm。
尽管不受限制,但是可通过喷涂方法、浸渍方法等来形成绝缘涂层122。尽管没有限制,但是当绝缘涂层122利用玻璃形成时,可使用干式涂覆装置来形成绝缘涂层122。例如,干式涂覆装置包括腔、设置在腔中并基于轴进行高速旋转的摩擦部、以及叶片。当将磁性金属颗粒和玻璃颗粒引入腔中时,玻璃粉末由于高速旋转而通过粉末颗粒之间的摩擦热而软化,从而被吸附在磁性金属颗粒的表面上以形成绝缘涂层122。例如,可通过利用由机械摩擦产生的热来软化玻璃粉末,然后在磁性金属颗粒的表面上涂覆软化的绝缘涂层122,从而形成绝缘涂层122。
示例1的变型示例
图4是示出根据示例1的变型示例的包括在主体中的磁性粉末的一部分示意图,图7A和图7B是根据示例1的变型示例的磁性粉末的绝缘涂层的放大图。
基于图4,与根据示例1的线圈组件1000相比,根据本变型示例的线圈组件1000具有不同的绝缘涂层122的成分。因此,描述仅与示例1不同的绝缘涂层122的成分。示例1中的其余组成的描述可应用于本示例性实施例。
在本变型示例中,绝缘涂层还可包含Zn作为附加添加剂。也就是说,与仅包含Sn的情况相比,在本变型示例中可确保提高的绝缘性能,从而降低绝缘电阻。作为包含Sn和Zn的玻璃的示例,绝缘涂层122包含SnO-P2O5和ZnO-P2O5。在这种情况下,基于磁性粉末的总重量,绝缘涂层122可包含约0.1wt%的SnO-P2O5和约0.2wt%的ZnO-P2O5。
基于图4,绝缘涂层122包括围绕磁性金属颗粒121并与磁性金属颗粒121的表面直接接触的第一区域1221和设置在第一区域1221的外表面上的第二区域1222。基于绝缘涂层122的总重量,与第一区域1221相比,第二区域1222可包含更大量的Sn。此外,基于绝缘涂层122的总重量,与第一区域1221相比,第二区域1222可包含更大量的Zn。在先前描述的形成绝缘涂层122的工艺中,在玻璃粉末被软化时可能发生玻璃粉末的重新排列。由于玻璃的多孔结构,包含Sn或Zn的相对大量的玻璃可分布在磁性金属颗粒121的最外区域中。
基于绝缘涂层122的总重量,第二区域1222包含6wt%至18wt%的Sn和20wt%至40wt%的P。当Sn的量小于6wt%时,不能充分确保主体100的填充系数和磁导率,而Sn的量超过18wt%使得由于包含Sn的玻璃的多孔结构而难以保持玻璃的形状并因此难以确保足够的绝缘性能。当P的量小于20wt%时,难以使玻璃以期望的水平非晶化,而P的量超过40wt%导致难以确保期望的绝缘性能。此外,基于绝缘涂层的总重量,绝缘涂层122的第二区域可包含1wt%至5wt%的硅。当Si的量小于1wt%时,不能确保期望的绝缘性能,而Si的量超过5wt%使得难以使玻璃以期望的水平非晶化。
在本示例性实施例的示例1的变型示例中,绝缘涂层122的厚度可以是20nm至61nm。图7A和图7B是本公开的示例1的变型示例的绝缘涂层122的低倍SEM的图像。基于图7A和图7B,作为使用低倍SEM观察的结果,绝缘涂层122的最小厚度为约22nm,并且绝缘涂层122的最大厚度为约60.5nm。换句话说,与常规绝缘涂层相比,在本示例性实施例中,绝缘涂层122通过包含Sn和Zn而形成为薄且均匀的。在示例1的变型实施例中,绝缘涂层122的厚度可以是20nm至61nm。
线圈组件
图1是示意性地示出根据示例1的线圈组件的透视图,图2是图1的沿线I-I'截取的线圈组件的截面图。
基于图1和图2,示出了在电源电路的电源线中使用的电感器作为线圈组件的示例。然而,除了电感器之外,根据本示例性实施例的线圈组件还可适当地用作磁珠、滤波器等。
另外,将把薄膜型电感器描述为电感器的示例,但是不限于此。根据本示例性实施例的线圈组件可适当地用作绕线型电感器。
线圈组件1000可包括主体100、支撑基板200、第一线圈部310和第二线圈部320、第一外电极410和第二外电极420以及绝缘膜500。
主体100可具有近似六面体的形状。尽管没有具体示出,但是主体100可包括在厚度(Z)方向上相对的第一表面和第二表面、在长度(X)方向上相对的第三表面和第四表面以及在宽度(Y)方向上相对的第五表面和第六表面。尽管没有限制,但是主体100在长度方向上的长度可大于在宽度方向上的宽度,从而形成长方体形状。
主体100可形成线圈组件1000的外部,并且可包含根据先前描述的示例性实施例的磁性粉末。磁性粉末120可分散在诸如环氧树脂或聚酰亚胺的聚合物中,以包括在主体100中。
如下所述,主体100包括穿透第一线圈部310和第二线圈部320的芯部110。芯部110可通过填充第一线圈部310和第二线圈部320的通孔的磁性复合片形成,但不限于此。
主体100可包含磁性粉末120和树脂。具体地,主体100可通过堆叠包含树脂和分散在树脂中的磁性粉末120的至少一个磁性复合片来形成。然而,主体100可具有与其中磁性粉末120分散在树脂中的结构不同的结构。例如,主体100可利用诸如铁氧体的磁性材料形成。
为了避免重复描述,省略了与根据上述示例性实施例的磁性粉末的特征相同的特征的描述。
支撑基板200和第一线圈部310和第二线圈部320嵌入主体100中,且第一线圈部310和第二线圈部320在主体100内部彼此间隔开。支撑基板200包括一个表面和与所述一个表面相对的另一表面,并且下面描述的第一线圈部310和第二线圈部320分别设置在支撑基板200的一个表面和另一表面上。
支撑基板200可利用诸如热固性绝缘树脂(诸如环氧树脂)、热塑性绝缘树脂(诸如聚酰亚胺)或感光绝缘树脂的绝缘材料形成,或者可利用其中利用这样的绝缘树脂浸渍诸如玻璃纤维或无机填料的增强材料的绝缘材料形成。例如,支撑基板200可利用诸如半固化片、味之素堆积膜(ABF,Ajinomoto Build-up Film)、FR-4、双马来酰亚胺三嗪(BT)树脂、感光电介质(PID)等的绝缘材料形成,但不限于此。
第一线圈部310和第二线圈部320在支撑基板200的一个表面和另一表面上间隔开,并且表现出线圈组件的特性。作为示例,当线圈组件1000用作功率电感器时,输出电压可保持恒定。
第一线圈部310和第二线圈部320基于芯部110形成多个匝。具体地,第一线圈部310和第二线圈部320包括通过多个匝连接的一个端部和另一端部。作为示例,第一线圈部310的一个端部暴露在主体100的第三表面上以连接到第一外电极410,而第二线圈部320的一个端部暴露在主体100的第四表面上以连接到第二外电极420。
第一线圈部310和第二线圈部320可形成为具有螺旋形状,并且可经由形成在支撑基板200上的过孔电极(未示出)电连接。
第一线圈部310和第二线圈部320以及过孔电极(未示出)可利用诸如铜(Cu)、铝(Al)、银(Ag)、锡(Sn)、金(Au)、镍(Ni)、铅(Pb)、钛(Ti)或它们的合金的导电材料形成,但不限于此。
第一外电极410和第二外电极420设置在主体100的外部并且彼此间隔开,以覆盖第一线圈部310和第二线圈部320中的每个的一个端部。
第一外电极410和第二外电极420可通过使用包含具有优异导电性的金属的膏形成;例如,第一外电极410和第二外电极420可通过使用包含单独的Ni、Cu、Sn或Ag或者包含它们的合金的导电膏形成。此外,可在第一外电极410和第二外电极420中的每个上进一步形成镀层。在这种情况下,镀层可包含从由镍(Ni)、铜(Cu)和锡(Sn)组成的组中选择的至少一种;例如,可顺序地形成镍(Ni)镀层和锡(Sn)镀层。
第一线圈部310和第二线圈部320可被绝缘膜500覆盖。绝缘膜500可通过诸如丝网印刷法、利用光致抗蚀剂(PR)的曝光和显影工艺、喷涂工艺、气相沉积等的已知方法来形成。绝缘膜500可使用聚对二甲苯树脂形成为薄膜。如被绝缘膜500覆盖,第一线圈部310和第二线圈部320可不与包含在主体100中的磁性粉末120直接接触。
如上面所阐述的,根据示例性实施例,通过将绝缘涂层形成为薄且均匀的,可在改善主体的填充系数和磁导率的同时确保绝缘性能。
本公开不限于以上示例性实施例和附图,而是由所附权利要求限制。
尽管上面已经示出和描述了示例性实施例,但是对于本领域技术人员将明显的是,可在不脱离本发明的由所附权利要求限定的范围的情况下进行修改和改变。
Claims (17)
1.一种磁性粉末,包括:
磁性金属颗粒,包含Fe;以及
绝缘涂层,设置在所述磁性金属颗粒的表面上,并包含Sn、P和O。
2.根据权利要求1所述的磁性粉末,其中,所述绝缘涂层包括SnO-P2O5。
3.根据权利要求1所述的磁性粉末,其中,基于所述磁性粉末的总重量,所述磁性粉末包括0.2wt%的量的所述绝缘涂层。
4.根据权利要求1-3中任一项所述的磁性粉末,其中,基于所述绝缘涂层的总重量,所述绝缘涂层包括15wt%至30wt%的Sn和10wt%至25wt%的P。
5.根据权利要求1-3中任一项所述的磁性粉末,其中,基于所述绝缘涂层的总重量,所述绝缘涂层包括3wt%至10wt%的硅。
6.根据权利要求1-3中任一项所述的磁性粉末,其中,所述绝缘涂层的厚度为15nm至25nm。
7.根据权利要求1-3中任一项所述的磁性粉末,其中,所述磁性金属颗粒的粒径为1μm至100μm。
8.根据权利要求1-3中任一项所述的磁性粉末,其中,所述磁性金属颗粒包括Fe-Si-B基非晶合金或Fe-Si-B基纳米晶合金。
9.一种磁性粉末,包括:
磁性金属颗粒,包含Fe;以及
绝缘涂层,设置在所述磁性金属颗粒的表面上,并包含Sn、P、Zn和O。
10.根据权利要求9所述的磁性粉末,其中,所述绝缘涂层包括SnO-P2O5和ZnO-P2O5。
11.根据权利要求9所述的磁性粉末,其中,基于磁性粉末的总重量,所述绝缘涂层包括0.1wt%的SnO-P2O5和0.2wt%的ZnO-P2O5。
12.根据权利要求9-11中任一项所述的磁性粉末,其中,所述绝缘涂层包括:第一区域,包围所述磁性金属颗粒,并与所述磁性金属颗粒的表面直接接触;以及第二区域,设置在所述第一区域的外表面上。
13.根据权利要求12所述的磁性粉末,其中,所述第二区域包括比所述第一区域更大量的Sn。
14.根据权利要求12所述的磁性粉末,其中,所述第二区域包括比所述第一区域更大量的Zn。
15.根据权利要求12所述的磁性粉末,其中,基于所述绝缘涂层的总重量,所述第二区域包括6wt%至18wt%的Sn和20wt%至40wt%的P。
16.根据权利要求12所述的磁性粉末,其中,基于所述绝缘涂层的总重量,所述第二区域包括1wt%至5wt%的硅。
17.根据权利要求9-11中任一项所述的磁性粉末,其中,所述绝缘涂层的厚度为20nm至61nm。
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