CN113097337A - Two-dimensional Te nanosheet flexible transparent near-infrared photoelectric detector and preparation method thereof - Google Patents
Two-dimensional Te nanosheet flexible transparent near-infrared photoelectric detector and preparation method thereof Download PDFInfo
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- CN113097337A CN113097337A CN202110353075.8A CN202110353075A CN113097337A CN 113097337 A CN113097337 A CN 113097337A CN 202110353075 A CN202110353075 A CN 202110353075A CN 113097337 A CN113097337 A CN 113097337A
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- 239000002135 nanosheet Substances 0.000 title claims abstract description 77
- 238000002360 preparation method Methods 0.000 title abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 229910009819 Ti3C2 Inorganic materials 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 239000002055 nanoplate Substances 0.000 claims description 9
- -1 polyethylene terephthalate Polymers 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 7
- 239000002244 precipitate Substances 0.000 claims description 7
- 239000012265 solid product Substances 0.000 claims description 7
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 claims description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 5
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 5
- 238000001291 vacuum drying Methods 0.000 claims description 5
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 4
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 4
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 238000003760 magnetic stirring Methods 0.000 claims description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- VOADVZVYWFSHSM-UHFFFAOYSA-L sodium tellurite Chemical compound [Na+].[Na+].[O-][Te]([O-])=O VOADVZVYWFSHSM-UHFFFAOYSA-L 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- 238000012360 testing method Methods 0.000 abstract description 18
- 239000011149 active material Substances 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 4
- 238000005452 bending Methods 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 11
- 230000004044 response Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001027 hydrothermal synthesis Methods 0.000 description 2
- 230000004298 light response Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004273 TeO3 Inorganic materials 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012456 homogeneous solution Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006855 networking Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000004832 voltammetry Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H01L31/02—Details
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- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
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- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
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- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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Abstract
The invention provides a flexible transparent near-infrared photoelectric detector of a two-dimensional Te nano-sheet and a preparation method thereof, wherein the flexible transparent near-infrared photoelectric detector of the two-dimensional Te nano-sheet comprises: the device comprises a flexible substrate, a transparent electrode and two-dimensional Te nanosheets; a transparent electrode disposed on the flexible substrate, wherein the transparent electrode is made of MXene-Ti3C2Tx(ii) a Two-dimensional Te nano-sheets are overlapped on the anode and the cathode of the transparent electrode and communicated with the transparent electrodeA positive electrode and a negative electrode. The electrode is made of two-dimensional materials, and can be in better contact with two-dimensional active materials, so that the device has lower dark current, and the current changes more stably along with time in the whole test process.
Description
Technical Field
The disclosure relates to the field of flexible electronic devices, in particular to a two-dimensional Te nanosheet flexible transparent near-infrared photoelectric detector and a preparation method thereof.
Background
With the progress of science and technology and the development of times, people have higher and higher requirements on conventional electronic devices, and flexible electronic devices become hot spots of attention in order to adapt to the requirements of people and expand the application range of the electronic devices. Nowadays, informatization and networking have become the subjects of global development, the optical communication technology is taken as the basis of photoelectrons and microelectronics, and has the advantages of high confidentiality, strong environmental adaptability and the like, and the photoelectric detector is one of the most basic devices for realizing optical communication and has wide application prospects in a plurality of fields such as military, civil use and the like.
Among numerous photodetectors, the flexible transparent near-infrared photodetector has important significance in other fields except optical communication, such as image recognition, artificial intelligence and the like, due to the characteristics of high response speed and high response rate. In addition, the inherent transparency allows the photodetector to be used in more new fields, such as being mounted on the windshield of a vehicle, enabling autonomous driving without the need for redundant components, making the windshield a display panel, making windows of intelligent and multifunctional design, and the like.
At present, a preparation method of a transparent electrode of a photoelectric detector and selection of semiconductor materials have certain problems, so that a flexible transparent near-infrared photoelectric detector with a highly transparent electrode structure and difficult agglomeration of active materials is needed to be developed, the application range of the flexible transparent near-infrared photoelectric detector is further expanded, and the actual needs of people are met.
Disclosure of Invention
Technical problem to be solved
The present disclosure provides a two-dimensional Te nanosheet flexible transparent near-infrared photodetector and a manufacturing method thereof, so as to solve the technical problems presented above.
(II) technical scheme
According to one aspect of the present disclosure, there is provided a two-dimensional Te nanosheet flexible transparent near-infrared photodetector, comprising:
a flexible substrate;
a transparent electrode located over the flexible substrate; the transparent electrode is made of MXene-Ti3C2Tx；
The two-dimensional Te nano-sheets are overlapped on the anode and the cathode of the transparent electrode, and are communicated with the anode and the cathode of the transparent electrode.
In some embodiments of the present disclosure, the transparent electrodes are interdigitated electrodes having a channel width of 5-30 μm.
In some embodiments of the present disclosure, the two-dimensional Te nanoplate has a lateral dimension of 20-30 μm and a longitudinal dimension of 100-150 μm; the flexible substrate has a size of 3 × 3cm to 5 × 5 cm.
In some embodiments of the present disclosure, the transparent electrode has a transparency of 60% or more.
In some embodiments of the present disclosure, the flexible substrate material is polyethylene terephthalate.
In some embodiments of the present disclosure, the transparent electrode has a thickness of 50nm to 100 nm.
In some embodiments of the present disclosure, the two-dimensional Te nanosheet flexible transparent near infrared photodetector has a wavelength band in the range of 900nm to 1350 nm.
According to an aspect of the present disclosure, there is also provided a method for preparing a two-dimensional Te nanosheet flexible transparent near-infrared photodetector, including:
ultrasonically cleaning the flexible substrate for 5-20min by using acetone and ethanol in sequence;
coating photoresist on the cleaned flexible substrate, and developing through the photoresist to obtain the flexible substrate with the etched electrode pattern;
will have MXene-Ti3C2TxTransferring the solution of the material to a flexible substrate with an etched electrode pattern, drying, and stripping in acetone solution to obtain flexible transparent MXene-Ti3C2TxAn electrode;
preparing a two-dimensional Te nano sheet;
transferring the two-dimensional Te nanoplates to the flexible transparent MXene-Ti3C2TxOn the electrode, after vacuum drying, the two-dimensional Te nano-sheet is lapped on the transparent MXene-Ti3C2TxThe positive electrode and the negative electrode of the electrode are provided, and the two-dimensional Te nano-sheet is communicated with the transparent MXene-Ti3C2TxPositive and negative electrodes of the electrode.
In some embodiments of the present disclosure, the preparing the two-dimensional Te nanoplates comprises:
adding sodium tellurite and polyvinylpyrrolidone into deionized water under the condition of magnetic stirring to form a uniform solution;
slowly adding ammonia water and hydrazine hydrate into the uniform solution in sequence, and slightly shaking to fully mix the ammonia water and the hydrazine hydrate until the mixture is transparent to obtain a transparent solution;
pouring the transparent solution into a stainless steel high-pressure autoclave with a polytetrafluoroethylene lining, carrying out vacuum reaction at 170-200 ℃ for 30-40 hours, and naturally cooling the high-pressure autoclave to room temperature;
centrifuging at 3000-;
and then washing the rest impurity ions in the solid product precipitate by using deionized water until the solid product precipitate becomes silver gray and bright flakes appear, thus obtaining the two-dimensional Te nano-sheet.
In some embodiments of the present disclosure, the drying process employed in preparing the flexible transparent electrode is drying by a vacuum drying oven.
(III) advantageous effects
According to the technical scheme, the two-dimensional Te nanosheet flexible transparent near-infrared photoelectric detector and the preparation method disclosed by the invention have at least one or one part of the following beneficial effects:
(1) the two-dimensional layered Te nanosheet structure is adopted, so that the surface of the electrode is smoother, the electrode can be in closer contact with an active material with near-infrared light response, the dark current is lower, and the change of the current along with the time is more stable in the test process.
(2) The present disclosure employs a flexible substrate that can remain relatively stable after thousands of bending cycles, with good mechanical properties.
(3) The two-dimensional Te nano-sheet in the disclosure has the characteristics of narrow band gap and capability of forming a heterostructure, so that the two-dimensional Te nano-sheet has excellent optical response to near-infrared laser.
(4) The two-dimensional Te nanosheet is used as a two-dimensional material, and has the advantages of high carrier mobility, good mechanical strength, wider spectral response and the like because carrier migration and heat diffusion are limited in a two-dimensional plane.
Drawings
Fig. 1 is a schematic diagram of a two-dimensional Te nanosheet flexible transparent near-infrared photodetector according to an embodiment of the present disclosure.
Fig. 2 is a flowchart of a method for manufacturing a two-dimensional Te nanosheet flexible transparent near-infrared photodetector according to an embodiment of the present disclosure.
Fig. 3(a) is a SEM topography test chart of the two-dimensional Te nanosheet surface.
Fig. 3(b) is a two-dimensional Te nanosheet XRD test pattern.
Fig. 4(a) is an I-V contrast curve of the two-dimensional Te nanosheet flexible transparent near infrared photodetector and the gold electrode two-dimensional Te nanosheet flexible near infrared photodetector according to the embodiment of the present disclosure.
Fig. 4(b) is an I-T contrast curve of the two-dimensional Te nanosheet flexible transparent near infrared photodetector and the gold electrode two-dimensional Te nanosheet flexible near infrared photodetector according to the embodiment of the present disclosure.
Fig. 5 is an I-T test curve of the flexible transparent near-infrared photodetector with two-dimensional Te nanosheets according to the embodiment of the present disclosure, under irradiation of laser with a wavelength of 915nm and different optical power densities.
Fig. 6(a) is an I-T test curve after bending the two-dimensional Te nanosheet flexible transparent near-infrared photodetector of an embodiment of the present disclosure by 0 °, 30 °, 60 °, 90 °, 120 ° and 150 ° under a bias of 0.1V.
Fig. 6(b) is a test curve of changes of photocurrent and dark current of the two-dimensional Te nanosheet flexible transparent near-infrared photodetector after 5000 bending cycles of the test according to the embodiment of the present disclosure.
[ description of main reference numerals in the drawings ] of the embodiments of the present disclosure
1-a flexible substrate;
2-a transparent electrode;
3-two-dimensional Te nano-sheet.
Detailed Description
The defects of easy agglomeration of active materials, poor mechanical performance of devices, low light transmittance, large dark current and the like of the traditional rigid gold electrode 0/ID near infrared photoelectric detector are overcome. The invention provides a flexible transparent near-infrared photoelectric detector of a two-dimensional Te nano-sheet and a preparation method thereof, wherein the flexible transparent near-infrared photoelectric detector of the two-dimensional Te nano-sheet comprises: the device comprises a flexible substrate, a transparent electrode and two-dimensional Te nanosheets; a transparent electrode disposed on the flexible substrate, wherein the transparent electrode is made of MXene-Ti3C2Tx(ii) a And the two-dimensional Te nanosheets are erected on the anode and the cathode of the transparent electrode and communicated with the anode and the cathode of the transparent electrode. Transparent MXene-Ti3C2TxThe electrode is made of two-dimensional materials, and can be in better contact with the two-dimensional active materials, so that the device has lower dark current, and the current changes more stably along with time in the whole test process.
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
Certain embodiments of the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the disclosure are shown. Indeed, various embodiments of the disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements.
In a first exemplary embodiment of the present disclosure, a two-dimensional Te nanoplate flexible transparent near-infrared photodetector is provided. FIG. 1 shows a two-dimensional Te nanosheet flexible transparent near-infrared photodetector according to an embodiment of the present disclosureSchematic representation. As shown in fig. 1, the two-dimensional Te nanosheet flexible transparent near-infrared photodetector of the present disclosure includes: the device comprises a flexible substrate, a transparent electrode and two-dimensional Te nano-sheets. The applicable waveband range of the two-dimensional Te nanosheet flexible transparent near infrared photoelectric detector is 900-1350 nm. In the embodiment, the transparent electrode is positioned on the flexible substrate, and the two-dimensional Te nanosheets are erected on the anode and the cathode of the transparent electrode and communicated with the anode and the cathode of the transparent electrode. Wherein the transparent electrode is made of MXene-Ti3C2Tx. The lateral dimensions of the transparent electrode are greater than 20 μm and generally not greater than 30 μm. The longitudinal dimension of the transparent electrode is greater than 100 μm, typically not greater than 150 μm.
In one embodiment of the present disclosure, the transparent electrodes are interdigital electrodes having a channel width of 5-30 μm. Other electrode configurations known to those skilled in the art may be substituted and are not specifically limited herein.
In one embodiment of the present disclosure, the transparency of the transparent electrode is 60% or more. According to the concentration of the used materials and different preparation methods, electrodes with different transparencies can be obtained, but most of the electrodes have the transparency of more than 60 percent, so that the preparation of control panels on automobile glass and the manufacture of multifunctional windows are possible.
In one embodiment of the present disclosure, the flexible substrate material is polyethylene terephthalate, and after thousands of bending cycle tests, the device can still keep relatively stable and has good mechanical properties.
In the first exemplary embodiment of the disclosure, a preparation method of the two-dimensional Te nanosheet flexible transparent near-infrared photodetector is further provided, and a novel two-dimensional material MXene-Ti with good transmittance and metal conductivity similar to a graphene structure is specifically selected3C2TxAs a transparent electrode material for photodetectors. And selecting narrow-band-gap two-dimensional Te nano-sheets with good optical and electronic properties as active materials, and performing micro-processing (spin coating, photoetching, developing, stripping and the like) on polyethylene terephthalate by using a semiconductor micro-processing technologyA transparent two-dimensional electrode structure is prepared on an ester (PET) flexible substrate, and a two-dimensional flaky Te material which is synthesized by a hydrothermal method and has near infrared light response is combined with the two-dimensional flaky Te material to prepare a two-dimensional and two-dimensional flexible near infrared photoelectric detector.
Specifically, operations S1-S5 are included, as shown in FIG. 2.
Operation S1: cutting a piece of flexible substrate with the size of 3 × 3cm and made of polyethylene terephthalate (PET), and ultrasonically cleaning the flexible substrate for 10min by using acetone and ethanol in sequence.
Operation S2: and coating photoresist on the washed flexible substrate, and carrying out photoetching development to obtain the flexible substrate with the etched electrode pattern.
Operation S3: two-dimensional MXene-Ti with high conductivity3C2TxTransferring the solution of the material to a flexible substrate with etched electrode patterns, drying, and stripping in acetone solution to prepare flexible transparent MXene-Ti3C2TxAnd an electrode.
Operation S4: two-dimensional Te nano-sheets sensitive to near infrared light are grown by a hydrothermal method.
Operation S5: transferring it to flexible transparent MXene-Ti3C2TxOn the electrode, after vacuum drying, the Te nano-sheet is ensured to be lapped on the transparent MXene-Ti3C2TxAcross the electrodes and successfully conduct them.
As shown in fig. 3a and fig. 3b, it can be known from the characterization of Te that the two-dimensional Te nanosheet flexible transparent near-infrared photodetector required by the present disclosure can be successfully prepared by using the preparation method shown in fig. 2. The preparation method of the two-dimensional Te nanosheet in operation S4 specifically comprises the following steps: operation S41-operation S45
Operation S41: adding sodium tellurite (Na)2TeO3) With polyvinylpyrrolidone (PVP) added to deionized water with magnetic stirring to form a homogeneous solution.
Operation S42: and slowly adding ammonia water and hydrazine hydrate into the uniform solution in sequence, and slightly shaking to fully mix the ammonia water and the hydrazine hydrate until the mixture is transparent to obtain a transparent solution.
Operation S43: the obtained transparent solution was poured into a stainless steel autoclave lined with polytetrafluoroethylene, and after vacuum reaction at 200 ℃ for 30 hours, the autoclave was naturally cooled to room temperature.
Operation S44: after centrifugation at 5000 rpm for 5 minutes, a solid product precipitate was obtained.
Operation S45: and then washing the rest impurity ions in the solid product precipitate by using deionized water until the solid product precipitate becomes silver gray and bright flakes appear, thus obtaining the two-dimensional Te nano-sheet.
And performing photoelectric test comparison of the two-dimensional Te nanosheet flexible transparent near infrared photoelectric detector and the gold electrode two-dimensional Te nanosheet flexible near infrared photoelectric detector.
FIG. 4(a) shows a comparison graph of voltammetry curves of two Te nanosheet photodetectors with different electrode structures under dark current and 915nm infrared light irradiation, wherein the optical power density of the infrared laser is 57.3mW/cm2. As can be seen, under similar test environments, the transparent MXene-Ti base material is based on3C2TxThe two-dimensional Te nanosheet flexible transparent near infrared photoelectric detector of the electrode can generate larger photocurrent, and has lower and more stable dark current of the device with the size of fA level.
FIG. 4(b) is an I-T diagram of the variation degree of the photocurrent relative to the respective dark current of the Te nanosheet photodetectors with two different electrode structures under the same infrared light condition, based on the transparent MXene-Ti3C2TxThe photocurrent change degree of the two-dimensional Te nanosheet flexible transparent near infrared photoelectric detector of the electrode is about 13 times that of the gold-electrode two-dimensional Te nanosheet flexible near infrared photoelectric detector, so that the electrode has better photoresponse.
The following is based on transparent MXene-Ti3C2TxTwo-dimensional Te nanosheet flexible transparent near-infrared photoelectric detector of electrode at different optical power densities (20.7 mW/cm)2，57.3mW/cm2) Photoelectric test under laser irradiation.
As shown in FIG. 5, different optical power densities have less effect on photocurrent and greater effect on dark currentThe stronger the intensity, the more stable the dark current, the increased optical power density, and the periodic optical response on-off ratio of the device can be greatly improved. In the 10 given dynamic cycle tests, the photocurrent change is stable, which shows that the transparent MXene-Ti-based material prepared by the invention3C2TxThe two-dimensional Te nanosheet flexible transparent near-infrared photoelectric detector of the electrode has good cycling stability and repeatability.
In order to investigate the reliability of the flexible electronic device, bending tests are performed on the device at different angles, and the reliability of the device is judged by observing whether the current change of the device is stable under different bending conditions. As can be seen from FIG. 6(a), the film is based on transparent MXene-Ti after bending at six different angles3C2TxThe photocurrent and dark current of the two-dimensional Te nanosheet flexible transparent near-infrared photoelectric detector of the electrode still keep stable and almost have no difference, which proves that the prepared photoelectric detector has excellent electrical stability and mechanical stability. In addition, the prepared flexible photodetector was subjected to a bending cycle test, and if the device was bent from 0 ° to 60 ° and then restored to 0 ° as one bending cycle, the device was bent 5,000 times, and the average values of the photocurrent and the dark current of the device after each bending cycle were recorded, as shown in fig. 6 (b). After the two-dimensional Te nanosheet flexible transparent near-infrared photoelectric detector is subjected to bending cycle test for 5,000 times, the photocurrent and the dark current of the two-dimensional Te nanosheet flexible transparent near-infrared photoelectric detector are almost not obviously changed and normally fluctuate only within a very small range. This result indicates that the film is based on transparent MXene-Ti3C2TxThe two-dimensional Te nanosheet flexible transparent near infrared photoelectric detector of the electrode has bending property and excellent folding resistance on the basis of not damaging the electronic performance of the two-dimensional Te nanosheet flexible transparent near infrared photoelectric detector.
So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Further, the above definitions of the various elements and methods are not limited to the various specific structures, shapes or arrangements of parts mentioned in the examples, which may be easily modified or substituted by those of ordinary skill in the art.
From the above description, those skilled in the art should have clear understanding of the two-dimensional Te nanosheet flexible transparent near-infrared photodetector and the preparation method disclosed herein.
In summary, the present disclosure provides a flexible transparent near-infrared photoelectric detector of two-dimensional Te nanosheets and a method for preparing the same, wherein the transparent MXene-Ti is obtained by3C2TxThe electrode is made of two-dimensional materials, and can be in better contact with the two-dimensional active materials, so that the device has lower dark current, and the current changes more stably along with time in the whole test process.
It should also be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure.
And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Unless otherwise indicated, the numerical parameters set forth in the specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the present disclosure. In particular, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about". Generally, the expression is meant to encompass variations of ± 10% in some embodiments, 5% in some embodiments, 1% in some embodiments, 0.5% in some embodiments by the specified amount.
Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (10)
1. A two-dimensional Te nanosheet flexible transparent near infrared photoelectric detector comprises:
a flexible substrate;
a transparent electrode located over the flexible substrate; the transparent electrode is made of MXene-Ti3C2Tx；
The two-dimensional Te nano-sheets are overlapped on the anode and the cathode of the transparent electrode, and are communicated with the anode and the cathode of the transparent electrode.
2. The two-dimensional Te nanosheet flexible transparent near-infrared photodetector of claim 1, wherein the transparent electrode is an interdigitated electrode having a channel width of 5-30 μ ι η.
3. The flexible transparent near-infrared photodetector of two-dimensional Te nanosheets as claimed in claim 1, wherein the two-dimensional Te nanosheets have a transverse dimension of 20-30 μm and a longitudinal dimension of 100-150 μm; the flexible substrate has a size of 3 × 3cm to 5 × 5 cm.
4. The two-dimensional Te nanoplate flexible transparent near-infrared photodetector of claim 1, wherein the transparency of the transparent electrode is 60% or greater.
5. The two-dimensional Te nanosheet flexible transparent near-infrared photodetector of claim 1, wherein the flexible substrate material is polyethylene terephthalate.
6. The two-dimensional Te nanoplate flexible transparent near-infrared photodetector of claim 1, wherein the thickness of the transparent electrode is 50-100 nm.
7. The two-dimensional Te nanosheet flexible transparent near-infrared photodetector of claim 1, wherein the two-dimensional Te nanosheet flexible transparent near-infrared photodetector has a wavelength band in a range of 900nm to 1350 nm.
8. A method of making a two-dimensional Te nanoplate flexible transparent near-infrared photodetector as claimed in any one of claims 1 to 7, comprising:
ultrasonically cleaning the flexible substrate for 5-20min by using acetone and ethanol in sequence;
coating photoresist on the cleaned flexible substrate, and developing through the photoresist to obtain the flexible substrate with the etched electrode pattern;
will have MXene-Ti3C2TxTransferring the solution of the material to a flexible substrate with an etched electrode pattern, drying, and stripping in acetone solution to obtain flexible transparent MXene-Ti3C2TxElectrode for electrochemical cell；
Preparing a two-dimensional Te nano sheet;
transferring the two-dimensional Te nanoplates to the flexible transparent MXene-Ti3C2TxOn the electrode, after vacuum drying, the two-dimensional Te nano-sheet is lapped on the transparent MXene-Ti3C2TxThe positive electrode and the negative electrode of the electrode are provided, and the two-dimensional Te nano-sheet is communicated with the transparent MXene-Ti3C2TxPositive and negative electrodes of the electrode.
9. The method of preparing as claimed in claim 8, wherein said preparing two-dimensional Te nanoplates comprises:
adding sodium tellurite and polyvinylpyrrolidone into deionized water under the condition of magnetic stirring to form a uniform solution;
slowly adding ammonia water and hydrazine hydrate into the uniform solution in sequence, and slightly shaking to fully mix the ammonia water and the hydrazine hydrate until the mixture is transparent to obtain a transparent solution;
pouring the transparent solution into a stainless steel high-pressure autoclave with a polytetrafluoroethylene lining, carrying out vacuum reaction at 170-200 ℃ for 30-40 hours, and naturally cooling the high-pressure autoclave to room temperature;
centrifuging at 3000-;
and then washing the rest impurity ions in the solid product precipitate by using deionized water until the solid product precipitate becomes silver gray and bright flakes appear, thus obtaining the two-dimensional Te nano-sheet.
10. The production method according to claim 8, wherein the drying treatment used in the production of the flexible transparent electrode is drying by a vacuum drying oven.
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