CN113086939B

CN113086939B - MEMS device, method of fabricating the same, and integrated MEMS using the same

Info

Publication number: CN113086939B
Application number: CN202011535133.0A
Authority: CN
Inventors: 张恒中; 黄芝杰; 蔡智雅; 林靖渊
Original assignee: Industrial Technology Research Institute ITRI
Current assignee: Industrial Technology Research Institute ITRI
Priority date: 2019-12-23
Filing date: 2020-12-23
Publication date: 2024-04-09
Anticipated expiration: 2040-12-23
Also published as: TW202124254A; CN113086937A; CN113086937B; TWI765489B; CN113086939A

Abstract

The invention discloses a micro-electromechanical system device, a manufacturing method thereof and an integrated micro-electromechanical system using the same. The MEMS device also includes a first dielectric layer disposed on the substrate. The MEMS device further comprises at least one metal layer disposed on the first dielectric layer, and at least a portion of the metal layer is electrically connected to the contact. The MEMS device comprises a second dielectric layer disposed on the first dielectric layer and the metal layer and having a recess structure. The MEMS device also includes a structural layer disposed on the second dielectric layer and having an opening. The opening is arranged corresponding to the groove structure, and the cross section area of the bottom of the opening is smaller than that of the top of the groove structure. The MEMS device further comprises a filling layer at least partially disposed in the opening and the groove structure. The second dielectric layer, the structural layer and the filling layer define a cavity.

Description

MEMS device, method of fabricating the same, and integrated MEMS using the same

Technical Field

The present invention relates to a microelectromechanical system (microelectromechanical system, MEMS) device, a method of manufacturing the same, and an integrated microelectromechanical system using the same, and more particularly, to a microelectromechanical system device having good sealing quality, a method of manufacturing the same, and an integrated microelectromechanical system using the same.

Background

Microelectromechanical Systems (MEMS) devices typically include mechanical elements (fixed and/or movable elements) to sense a physical condition, such as force, acceleration, pressure, temperature, or vibration, and electronic elements to process electrical signals. Accordingly, MEMS devices are often used as a sensor and are widely used in applications such as automotive systems, inertial navigation systems, home appliances, protection systems for various devices, and many other industrial, scientific, and engineering systems.

Existing MEMS devices, while generally satisfactory, are not satisfactory in every respect. For example, when the MEMS device is used as a pressure sensor, it may be necessary to provide a hermetically sealed cavity, thus requiring good sealing quality. However, in order to achieve this, problems such as an excessively long manufacturing process time and a complicated manufacturing process may occur in manufacturing the conventional MEMS device.

Disclosure of Invention

In some embodiments of the present invention, by providing a groove structure in the dielectric layer and providing an opening corresponding to the groove structure in the structural layer, the filling layer (i.e. the structure for sealing holes) can be continuously and uniformly filled in the opening and the groove structure, so as to complete sealing holes. The MEMS device and the manufacturing method thereof can effectively prevent the generation of hole sealing joints (sea) and hollow structures, thereby improving the hole sealing quality and the overall stability. In addition, the complex manufacturing process is not needed, so that the manufacturing process time can be effectively shortened, and the cost can be reduced.

Embodiments of the present invention include a microelectromechanical systems device. The MEMS device comprises a substrate having at least one contact. The MEMS device also includes a first dielectric layer disposed on the substrate. The MEMS device further comprises at least one metal layer disposed on the first dielectric layer, and at least a portion of the metal layer is electrically connected to the contact. The MEMS device comprises a second dielectric layer disposed on the first dielectric layer and the metal layer and having a recess structure. The MEMS device also includes a structural layer disposed on the second dielectric layer and having an opening. The opening is arranged corresponding to the groove structure, and the cross section area of the bottom of the opening is smaller than that of the top of the groove structure. The MEMS device further comprises a filling layer disposed in the opening and the groove structure. The second dielectric layer, the structural layer and the filling layer define a cavity.

Embodiments of the present invention include a method of manufacturing a microelectromechanical systems device. The manufacturing method of the MEMS device comprises providing a substrate with at least one contact. The method also includes forming a first dielectric layer on the substrate. The first dielectric layer has at least one via exposing a portion of the top surface of the contact. The method further includes forming at least one metal layer on the first dielectric layer. At least a portion of the metal layer is electrically connected to the contact. The manufacturing method of the MEMS device comprises forming a second dielectric layer on the first dielectric layer and the metal layer. The second dielectric layer has a groove structure. The method also includes forming a sacrificial layer over the second dielectric layer and in the recess structure. The method further includes forming a structural layer on the second dielectric layer and the sacrificial layer. The manufacturing method of the MEMS device comprises removing part of the structural layer to form an opening, and exposing the sacrificial layer in the groove structure. The method of fabricating the MEMS device also includes removing the sacrificial layer to expose the recess structure. The cross-sectional area of the bottom of the opening is smaller than the cross-sectional area of the top of the groove structure. The method further includes forming a filling layer in the opening and the recess structure. At least a portion of the filling layer is formed in the opening and the groove structure, and the second dielectric layer, the structural layer and the filling layer define a cavity.

Embodiments of the present invention include a method of manufacturing a microelectromechanical systems device. The manufacturing method of the MEMS device comprises providing a substrate with at least one contact. The method also includes forming a first dielectric layer on the substrate. The first dielectric layer has at least one via exposing a portion of the top surface of the contact. The method further includes forming at least one first metal layer on the first dielectric layer. At least a portion of the first metal layer is electrically connected to the contact. In addition, the manufacturing method of the MEMS device comprises the steps of forming a second dielectric layer on the first dielectric layer and the first metal layer. The method also includes forming a sacrificial layer over the second dielectric layer. The method further includes forming a structural layer on the second dielectric layer and the sacrificial layer. Furthermore, the manufacturing method of the MEMS device comprises removing part of the structural layer to form a first opening, wherein part of the top surface of the sacrificial layer is exposed by the first opening. The method also includes removing a portion of the sacrificial layer through the first opening to form a second opening, the second opening exposing a portion of the top surface of the second dielectric layer. The method further includes removing a portion of the second dielectric layer through the second opening to form a recess structure. The cross-sectional area of the bottom of the first opening is smaller than the cross-sectional area of the top of the groove structure. In addition, the manufacturing method of the MEMS device comprises the step of removing the sacrificial layer. The method of fabricating the MEMS device also includes forming a fill layer. At least a portion of the filling layer is formed in the second opening and the groove structure, and the second dielectric layer, the structural layer and the filling layer define a cavity.

Embodiments of the present invention include an integrated microelectromechanical system. The integrated MEMS includes a plurality of MEMS devices as described above. The mems devices share the same substrate.

Drawings

Embodiments of the present invention will be described in detail below with reference to the attached drawings. It should be noted that the various features are not drawn to scale and are merely illustrative. In fact, the dimensions of the elements may be exaggerated or reduced to clearly illustrate the technical features of the embodiments of the present invention.

FIGS. 1-8 are schematic cross-sectional views illustrating various stages in the fabrication of a MEMS device according to some embodiments;

FIG. 9 is a schematic cross-sectional view of another embodiment illustrating a groove structure;

FIG. 10 is a schematic cross-sectional view of a groove structure according to another embodiment;

FIG. 11 is a schematic cross-sectional view of a MEMS device according to some embodiments;

FIGS. 12-22 are schematic cross-sectional views illustrating various stages in the fabrication of an integrated MEMS in accordance with some embodiments;

FIG. 23 is a partial top view of an integrated micro-electromechanical system;

FIGS. 24-25 are schematic cross-sectional views of some other embodiments illustrating various stages in the fabrication of an integrated MEMS;

fig. 26-29 are schematic cross-sectional views of some other embodiments illustrating various stages in the fabrication of an integrated mems.

Symbol description

1 Integrated MEMS

100,102,106,108,110 MEMS devices

10 substrate

12 contact point

20 first dielectric layer

20H through hole

30 Metal layer

31 first part

32 second part

40 second dielectric layer

40T top surface

42,42',44,46: groove structure

42E,44E tip

42S,44S,46S side wall

42TA cross-sectional area of roof

50 sacrificial layer

50R sacrificial layer remainder

50T top surface

52,52': openings

60 structural layer

60B bottommost surface of structural layer

60E1,60E2 end portions

60T top surface

62 opening(s)

62BA cross-sectional area of bottom

62TA cross-sectional area of roof

621,622 side wall

64 opening of

70 filling layer

72 opening of

80 cavity

90 metal layer

90-1 first part

90-2 second part

92 third dielectric layer

94 opening of

96 Metal layer

96-1 first part

96-2 second part

D, direction

d1, d2 distance

g, height

Theta angle

Detailed Description

The following disclosure provides many different embodiments, or examples, for implementing different features of the disclosure. The following disclosure describes specific examples of various components and arrangements thereof to simplify the description. Of course, these specific examples are not intended to be limiting. For example, if embodiments of the present invention describe a first feature formed on or over a second feature, embodiments that may include the first feature being in direct contact with the second feature, embodiments that may include additional features formed between the first feature and the second feature, such that the first feature and the second feature may not be in direct contact.

It is to be understood that additional operational steps may be performed before, during, or after the methods, and that in other embodiments of the methods, some of the operational steps may be replaced or omitted.

In addition, spatially relative terms such as "below" …, "" below, "" lower, "" above "…," "upper," "higher," and the like may be used herein to facilitate description of a relationship between one element(s) or feature(s) and another element(s) or feature(s) in the drawings, including different orientations of the device in use or operation and the orientation depicted in the figures. When the device is turned to a different orientation (rotated 90 degrees or other orientations), the spatially relative descriptors used herein interpreted in terms of the turned orientation.

In the specification, the terms "about", "approximately" and "approximately" generally mean within 20%, or within 10%, or within 5%, or within 3%, or within 2%, or within 1%, or within 0.5% of a given value or range. Where a given quantity is about, i.e., where "about", and "approximately" are not specifically recited, the meaning of "about", and "approximately" may be implied.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be appreciated that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present invention and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

The various embodiments disclosed below may repeat use of the same reference numerals and/or indicia. These repetition are for the purpose of simplicity and clarity and does not in itself dictate a particular relationship between the various embodiments and/or configurations discussed.

Fig. 1-8 are cross-sectional schematic diagrams illustrating various stages in the fabrication of a mems device 100, according to some embodiments. It is particularly noted that some of the components may be omitted from fig. 1-8 for clarity of illustration of features of embodiments of the present invention.

Referring to fig. 1, first, a substrate 10 is provided, and the substrate 10 may have at least one contact 12. In some embodiments, the substrate 10 may comprise silicon, but the embodiment of the invention is not limited thereto. For example, in some other embodiments, the substrate 10 may comprise some other elemental semiconductor (e.g., germanium). The substrate 10 may also include a compound semiconductor (e.g., silicon carbide, gallium arsenide, indium arsenide, or indium phosphide). The substrate 10 may also include an alloy semiconductor, such as germanium silicide, silicon germanium carbide (silicon germaniumcarbide), gallium arsenide phosphide (gallium arsenic phosphide), or indium gallium phosphide (gallium indium phosphide).

In some embodiments, the substrate 10 may include a semiconductor-on-insulator (semiconductor on insulator, SOI), such as: silicon on insulator or germanium on insulator. The substrate including the semiconductor-on-insulator may include a base plate, a buried oxide layer disposed on the base plate, and a semiconductor layer disposed on the buried oxide layer. In some embodiments, the substrate 10 may include a single crystal substrate, a multi-layer substrate (multi-layer substrate), other suitable substrates, or a combination thereof, but the present invention is not limited thereto.

In some embodiments, the substrate 10 may comprise a P-type dopant such as boron, aluminum, gallium, indium, thallium, or an N-type dopant such as arsenic, phosphorus, antimony. These dopants may form doped regions in the substrate 10, which may form, for example, a portion of the contact 12, but embodiments of the present invention are not limited thereto. In some embodiments, the substrate 10 may be considered a chip (chip) of the MEMS device 100.

Referring to fig. 1, a first dielectric layer 20 is then formed on a substrate 10. In some embodiments, the material of the first dielectric layer 20 may include an oxide such as silicon oxide, a nitride such as silicon nitride, other suitable materials, or a combination thereof, but the embodiment of the invention is not limited thereto. In some embodiments, the first dielectric layer 20 may be deposited on the substrate 10 by a deposition process, which may include, but is not limited to, metal organic chemical vapor deposition (metal organic chemical vapor phase deposition, MOCVD), atomic layer deposition (atomic layer deposition, ALD), molecular beam epitaxy (molecular beam epitaxy, MBE), liquid phase epitaxy (liquid phase epitaxy, LPE), similar processes, or combinations thereof.

Referring to fig. 2, at least one via hole 20H is formed in the first dielectric layer 20, and the via hole 20H may be disposed corresponding to the contact 12 and expose a portion of the top surface of the contact 12. In some embodiments, a patterning process may be performed on the first dielectric layer 20 to form the via hole 20H. For example, a mask layer (not shown) may be disposed on the first dielectric layer 20, and then an etching process is performed using the mask layer as an etching mask to etch the first dielectric layer 20 into the via hole 20H. In some embodiments, the mask layer may include a photoresist, such as a positive photoresist (positive photoresist) or a negative photoresist (negative photoresist). The mask layer may be a single layer or a multi-layer structure. The formation of the mask layer may include deposition, photolithography, other suitable processes, or combinations thereof, but the embodiment of the invention is not limited thereto.

In some embodiments, the deposition fabrication process includes spin-on coating (spin-on coating), chemical vapor deposition (chemical vapor phase deposition, CVD), atomic layer deposition, similar fabrication processes, or a combination of the foregoing. In some embodiments, the photolithographic fabrication process may include photoresist coating (e.g., spin coating), soft baking (soft baking), mask alignment (mask alignment), exposure (exposure), post-exposure baking (PEB), development (development), cleaning (rinsing), drying (e.g., hard baking), other suitable fabrication processes, or combinations thereof, but the embodiments of the present invention are not limited thereto.

In some embodiments, the etching process may include a dry etching process, a wet etching process, or a combination thereof. For example, the dry etching process may include a reactive ion etching (reactive ion etch, RIE), an inductively-coupled plasma (ICP) etching, a neutron beam etching (neutral beam etch, NBE), an electron cyclotron resonance (electron cyclotron resonance, ECR) etching, a similar etching process, or a combination thereof, but the embodiments are not limited thereto.

Referring to fig. 2, a metal layer 30 is then formed on the first dielectric layer 20, wherein at least a portion of the metal layer 30 is electrically connected to the contact 12. Specifically, as shown in fig. 2, the metal layer 30 includes a first portion 31 and a second portion 32, the first portion 31 is in direct contact with the contact 12 through the via hole 20H of the first dielectric layer 20, and the second portion 32 is separated from the contact 12 by the first dielectric layer 20. That is, the first portion 31 of the metal layer 30 may be electrically connected to the contact 12, and the second portion 32 of the metal layer 30 may be electrically insulated from the contact 12, but the embodiment of the invention is not limited thereto. For example, the first portion 31 of the metal layer 30 may be used to electrically connect the contact 12 with a subsequently formed structure.

In some embodiments, the material of the metal layer 30 may include gold (Au), nickel (Ni), platinum (Pt), palladium (Pd), iridium (Ir), titanium (Ti), chromium (Cr), tungsten (W), aluminum (Al), copper (Cu), other suitable materials, alloys of the foregoing, or combinations of the foregoing, but the embodiment of the invention is not limited thereto. In some embodiments, the metal material may be formed on the first dielectric layer 20 by physical vapor deposition, chemical vapor deposition, atomic layer deposition, evaporation (evapration), sputtering (sputtering), similar manufacturing processes, or a combination thereof, but the embodiment of the invention is not limited thereto. Next, a patterning process is performed on the metal material to form a first portion 31 and a second portion 32 of the metal layer 30 as shown in fig. 2. The patterning process is described in the foregoing examples, and thus will not be described in detail.

Referring to fig. 3, a second dielectric layer 40 is formed on the first dielectric layer 20 and the metal layer 30, and the second dielectric layer 40 has a recess structure 42. Similarly, the material of the second dielectric layer 40 may include an oxide such as silicon oxide, a nitride such as silicon nitride, other suitable materials, or a combination thereof, but the embodiment of the invention is not limited thereto. In some embodiments, the material of the second dielectric layer 40 may be the same as or different from that of the first dielectric layer 20, and may be according to practical requirements. In some embodiments, the second dielectric layer 40 may be deposited on the first dielectric layer 20 and the metal layer 30 through a deposition process, and examples of the deposition process are described above, so that the description thereof is omitted. In addition, a patterning process may be performed on the second dielectric layer 40 to form the recess structure 42. For example, a mask layer (not shown) may be provided on the second dielectric layer 40, followed by an etching process using the mask layer as an etching mask to form the recess structure 42. In some embodiments, the etching process may include a dry etching process, a wet etching process, or a combination thereof.

As shown in fig. 3, in some embodiments, the recess structure 42 of the second dielectric layer 40 may expose a portion of the top surface of the first dielectric layer 20, but the embodiment of the invention is not limited thereto. In some embodiments, the recess structure 42 may also be disposed over the first dielectric layer 20 without exposing the first dielectric layer 20; alternatively, the recess structure 42 may also expose a portion of the top surface of the second portion 32 of the metal layer 30, as may be desired.

In some embodiments, the sidewall 42S of the recess structure 42 may be substantially perpendicular to the top surfaces of the first dielectric layer 20 and the second dielectric layer 40, but the embodiment of the invention is not limited thereto. In the embodiment shown in fig. 3, the groove structure 42 may have a constant cross-sectional area. That is, the cross-sectional area of the groove structure 42 at different depths may be substantially the same as the cross-sectional area 42TA of the top of the groove structure 42, but the embodiment of the invention is not limited thereto.

Referring to fig. 4, a sacrificial layer 50 is formed on the second dielectric layer 40 and in the recess structure 42. Specifically, a sacrificial layer 50 may be formed on the bottom surface of the recess structure 42 and a portion of the sidewall 42S and a portion of the top surface of the second dielectric layer 40. In some embodiments, the material of the sacrificial layer 50 may include silicon oxide, photoresist, polyimide (polyimide), germanium, other suitable materials, or combinations thereof, but the embodiment of the invention is not limited thereto. In some embodiments, the sacrificial layer 50 and the first dielectric layer 20, the metal layer 30, and the second dielectric layer 40 may have a high etching selectivity. Therefore, the first dielectric layer 20, the metal layer 30 and the second dielectric layer 40 are prevented from being damaged in the subsequent process of removing the sacrificial layer 50. In some embodiments, the sacrificial layer 50 may be formed on the second dielectric layer 40 and in the recess structure 42 by a deposition process, and examples of the deposition process are described above, so that the description thereof is omitted.

Referring to fig. 5, a structural layer 60 is formed on the second dielectric layer 40 and the sacrificial layer 50. Specifically, the structural layer 60 may be formed on the top surface of the second dielectric layer 40 and the top surface of the sacrificial layer 50, and fills the remaining space of the recess structure 42. In some embodiments, the material of the structure layer 60 may include polysilicon, epitaxial silicon, silicon germanium, other suitable semiconductor materials, or combinations thereof, but the embodiment of the present invention is not limited thereto. In some embodiments, the structural layer 60 and the sacrificial layer 50 may also have a high etch selectivity. In some embodiments, the structure layer 60 may be formed on the second dielectric layer 40 and the sacrificial layer 50 and in the recess structure 42 by a deposition process, and examples of the deposition process are described above, so that the description thereof will not be repeated. In some embodiments, the structural layer 60 may be considered part of a microelectromechanical substrate.

Referring to fig. 6, a portion of structural layer 60 is removed to form an opening 62. Specifically, opening 62 corresponds to recess structure 42 (i.e., opening 62 is located above recess structure 42), and opening 62 may expose sacrificial layer 50 located in recess structure 42. In some embodiments, a patterning process may be performed on the structural layer 60 to form the opening 62. For example, a mask layer (not shown) may be provided on the structural layer 60, followed by a dry etching process using the mask layer as an etching mask to form the opening 62 in the structural layer 60. The etching gas used in the dry etching process includes, for example, CF ₄ 、O ₂ 、SF ₆ 、C ₄ F ₈ 、Ar、Cl ₂ 、BCl ₃ Other suitable etching gases, or combinations thereof, but embodiments of the invention are not limited thereto.

Referring to fig. 7, the sacrificial layer 50 is removed. Specifically, the sacrificial layer 50 located in the recess structure 42 and between the second dielectric layer 40 and the structural layer 60 is removed to expose the recess structure 42. For example, a wet etch fabrication process may be performed on the sacrificial layer 50 to remove the sacrificial layer 50. The etching liquid used in the wet etching process includes, for example, sulfuric acid (H) ₂ SO ₄ ) Phosphoric acid (H) ₃ PO ₄ ) Hydrofluoric acid (HF), hydrogen peroxide (H) ₂ O ₂ ) Ammonia (NH) ₄ OH), etc., but the embodiment of the invention is not limited thereto. Since the sacrificial layer 50 has a high etching selectivity to the first dielectric layer 20, the metal layer 30, the second dielectric layer 40 and the structural layer 60, the first dielectric layer 20, the metal layer 30, the second dielectric layer 40 and the structural layer 60 can be prevented from being damaged during the process of removing the sacrificial layer 50. In some embodiments, portions of the sacrificial layer 50 may also be retained. For example, as shown in fig. 7, the remaining sacrificial layer 50 may be regarded as a sacrificial layer remaining portion 50R, and the sacrificial layer remaining portion 50R is located between the second dielectric layer 40 and the structural layer 60, but the embodiment of the invention is not limited thereto. In some cases In other embodiments, the sacrificial layer 50 may be completely removed.

As shown in fig. 7, in some embodiments, a cross-sectional area 62BA of the bottom of the opening 62 is smaller than a cross-sectional area of the top 42TA of the recess structure 42. Since the sacrificial layer 50 occupies a portion of the space between the second dielectric layer 40 and the structural layer 60 in the above steps, the sidewall 621 of the opening 62 and the bottommost portion of the sidewall 622 are not located on the same plane after the sacrificial layer 50 is removed. Here, the bottom-most surface 60B of the structural layer 60 is extended, and the sidewall 621 of the opening 62 is extended, and the cross-sectional area of the bottom-most portion of the space formed by the two extended surfaces and the sidewall 622 of the opening 62 together may be defined as the cross-sectional area 62BA of the bottom portion of the opening 62 (as shown in fig. 7).

As shown in fig. 7, in some embodiments, the cross-sectional area 62BA of the bottom of the opening 62 is smaller than the cross-sectional area 62TA of the top of the opening 62. Specifically, the cross-sectional area of the opening 62 is not constant at different depths, and may be continuously variable. For example, as shown in fig. 7, in the cross section of this stage, the sidewall 621 and the sidewall 622 of the opening 62 may be two inclined planes, but the embodiment of the invention is not limited thereto.

Referring to FIG. 8, a fill layer 70 is formed to form a MEMS device 100 in accordance with an embodiment of the present invention. Specifically, at least a portion of the filling layer 70 may be formed in the opening 62 and the recess structure 42, that is, the space where the opening 62 and the recess structure 42 are located may be continuously formed and filled, such that the second dielectric layer 40, the structural layer 60 and the filling layer 70 may define a cavity 80. In other words, the cavity 80 may partially or completely replace the space previously occupied by the sacrificial layer 50 between the second dielectric layer 40 and the structural layer 60. That is, the cavity 80 is located between the second dielectric layer 40, the structural layer 60, and the filler layer 70. Furthermore, as shown in fig. 8, in some embodiments, the cavity 80 is located between the second dielectric layer 40, the sacrificial layer remaining portion 50R, the structural layer 60, and the filler layer 70, and thus, the height g of the cavity 80 may be substantially equal to the thickness of the sacrificial layer remaining portion 50R.

In some embodiments, the material of the filling layer 70 may include silicon oxide, silicon nitride, photoresist, polyimide, other suitable materials, or combinations thereof, but the embodiment of the invention is not limited thereto. In some embodiments, a filling layer 70 may be formed in the opening 62 and the recess structure 42 by a deposition process, and examples of the deposition process are described above, so that the description thereof is omitted. The filling layer 70 may be referred to herein as a hole sealing structure of the mems device 100. In addition, as shown in fig. 8, a part of the filling layer 70 may be formed on the structural layer 60, but the embodiment of the invention is not limited thereto.

As shown in fig. 8, in some embodiments, the recess structure 42 exposes a portion of the top surface of the first dielectric layer 20, so that the filling layer 70 may directly contact the first dielectric layer 20, but the embodiment of the invention is not limited thereto. In other embodiments, the recess structure 42 may be disposed over the first dielectric layer 20 without exposing the first dielectric layer 20, so the filling layer 70 may directly contact the second dielectric layer 40.

In a mems device that does not generally have a recess structure, during formation (deposition) of the filling layer 70, a plugged seam is easily formed because the portion corresponding to the center of the opening 62 is formed (deposited) at a higher rate than the portion away from the center of the opening 62. In contrast, since the mems device 100 of the embodiment of the present invention includes the recess structure 42 corresponding to the opening 62, the occurrence of the plugged seams can be effectively prevented.

Furthermore, in some embodiments of the present invention, since the cross-sectional area 62BA of the bottom of the opening 62 is smaller than the cross-sectional area 62TA of the top of the opening 62, the filling layer 70 is formed in the opening 62 more uniformly, so as to avoid the hollow structure being formed by closing before the filling layer 70 has not filled the groove structure 42 and the opening 62.

Therefore, in the mems device 100 according to the embodiment of the invention, the recess structure 42 is disposed in the second dielectric layer 40 and the opening 62 corresponding to the recess structure 42 is disposed in the structural layer 60, so that the filling layer 70 (i.e. the structure for sealing holes) continuously and uniformly fills the opening 62 and the recess structure 42 to complete sealing holes. That is, by the mems device 100 and the method for manufacturing the same according to the embodiments of the present invention, the occurrence of hole sealing seams and hollow structures can be effectively prevented, thereby improving the hole sealing quality and the overall stability of the mems device 100. In addition, the complex manufacturing process is not needed, so that the manufacturing process time can be effectively shortened, and the cost can be reduced.

As shown in fig. 8, in some embodiments, the projection of the opening 62 of the structural layer 60 in the groove structure 42 has an end portion 60E1 (or 60E 2), and the shortest distance D1 (or D2) between the end portion 60E1 (or 60E 2) and the top end 42E of the groove structure 42 in the direction parallel to the top surface of the second dielectric layer 40 (or the bottommost surface 60B of the structural layer 60) is greater than or equal to the thickness of the sacrificial layer 50 (or the remaining portion 50R) of the sacrificial layer (i.e. the height g of the cavity 80), but the embodiment of the present invention is not limited thereto. In the embodiment of the present invention, the shortest distance D1 (or D2) between the end portion 60E1 (or 60E 2) and the top end 42E of the groove structure 42 in the direction D parallel to the top surface of the second dielectric layer 40 (or the bottommost surface 60B of the structural layer 60) is adjusted according to the depth of the groove structure 42, which is not described in detail herein.

In the foregoing embodiment, the sidewall 42S of the recess structure 42 is substantially perpendicular to the top surfaces of the first dielectric layer 20 and the second dielectric layer 40, but the embodiment of the invention is not limited thereto. Fig. 9 is a schematic cross-sectional view of a groove structure 44 according to another embodiment. Meanwhile, other components adjacent to the groove structure 44 are also shown in fig. 9 for the sake of more clearly showing the features of the groove structure 44.

Referring to fig. 9, sidewalls 44S of recess structure 44 are not perpendicular to the top surface of second dielectric layer 40. In some embodiments, the angle θ between the top surface of the second dielectric layer 40 and the sidewall 44S of the recess structure 44 may be between 90 and 150 degrees, but the embodiment of the invention is not limited thereto. When the angle θ between the top surface of the second dielectric layer 40 and the sidewall 44S of the recess structure 44 is 90 degrees, the sidewall 44S of the recess structure 44 is substantially perpendicular to the top surface of the second dielectric layer 40.

Similarly, the projection of the opening 62 of the structural layer 60 in the groove structure 44 has an end portion 60E1 (or 60E 2), and the shortest distance D1 (or D2) between the end portion 60E1 (or 60E 2) and the top end 44E of the groove structure 44 in the direction D parallel to the top surface of the second dielectric layer 40 is greater than or equal to the thickness of the sacrificial layer 50 (or the remaining portion 50R) of the sacrificial layer (i.e., the height g of the cavity 80), which is not repeated herein.

Fig. 10 is a schematic cross-sectional view of a groove structure 46 according to yet another embodiment. Referring to fig. 10, the sidewall 46S of the recess structure 46 may have a curvature. The embodiments of fig. 9 and 10 show different examples of the groove structure according to the embodiments of the present invention, but the groove structure according to the embodiments of the present invention may be formed in other different shapes, depending on the actual requirements.

FIG. 11 is a schematic cross-sectional view of a MEMS device 102, according to some embodiments. The mems device 102 shown in fig. 11 is similar to the mems device 100 shown in fig. 8 in that the recess structure 42 of the mems device 102 exposes a portion of the top surface of the second portion 32 of the metal layer 30, such that the filling layer 70 can directly contact a portion of the metal layer 30 (i.e., the second portion 32 of the metal layer 30), but the embodiment of the invention is not limited thereto.

Fig. 12-22 are cross-sectional views illustrating various stages in the fabrication of the integrated mems 1, according to some embodiments. Fig. 23 is a partial top view of the integrated mems 1. Similarly, some of the components may be omitted from fig. 1-23 for clarity of illustration of features of embodiments of the present invention.

In some embodiments of the present invention, the integrated MEMS 1 may include a plurality of MEMS devices (e.g., MEMS device 106 and MEMS device 108). The mems devices may be similar in structure to mems device 100 shown in fig. 8 or mems device 102 shown in fig. 11 and may be formed by the manufacturing methods shown in fig. 1-8, but the embodiments of the invention are not limited thereto. Fig. 12-22 may present different methods of fabricating mems devices 106 and mems devices 108 than the embodiments shown in fig. 1-8.

Referring to fig. 12, first, a substrate 10 is provided, and the substrate 10 may have a plurality of contacts 12. Next, a first dielectric layer 20 is formed on the substrate 10. Examples of the materials and the forming method of the substrate 10 and the first dielectric layer 20 are as described above, and are not repeated herein.

Referring to fig. 13, a plurality of through holes 20H are formed in the first dielectric layer 20, and the through holes 20H may be disposed corresponding to the contacts 12 and expose a portion of the top surface of the contacts 12. Next, a metal layer 30 is formed on the first dielectric layer 20, wherein at least a portion of the metal layer 30 is electrically connected to the contact 12. Specifically, as shown in fig. 13, the metal layer 30 includes a plurality of first portions 31 and a plurality of second portions 32, the first portions 31 are in direct contact with the contacts 12 through the through holes 20H of the first dielectric layer 20, and the second portions 32 are separated from the contacts 12 by the first dielectric layer 20. That is, the first portion 31 of the metal layer 30 may be electrically connected to the contact 12, and the second portion 32 of the metal layer 30 may be electrically insulated from the contact 12, but the embodiment of the invention is not limited thereto. Examples of the materials and the forming method of the first dielectric layer 20 and the metal layer 30 are as described above, and are not repeated herein.

Referring to fig. 14, a second dielectric layer 40 is formed on the first dielectric layer 20 and the metal layer 30. Next, a sacrificial layer 50 is formed on the second dielectric layer 40. Similarly, the sacrificial layer 50 and the first dielectric layer 20, the metal layer 30, and the second dielectric layer 40 may have a high etching selectivity. Therefore, the first dielectric layer 20, the metal layer 30 and the second dielectric layer 40 are prevented from being damaged in the subsequent process of removing the sacrificial layer 50. Examples of the materials and the forming method of the second dielectric layer 40 and the sacrificial layer 50 are as described above, and are not repeated here.

Referring to fig. 15, a structural layer 60 is formed on the second dielectric layer 40 and the sacrificial layer 50. Similarly, the structural layer 60 and the sacrificial layer 50 may also have a high etching selectivity, and the structural layer 60 may be considered as a portion of the microelectromechanical substrate. Examples of materials and methods of forming the structural layer 60 are described above and are not repeated here.

Referring to fig. 16, a portion of structural layer 60 is removed to form an opening 62. As shown in fig. 16, the opening 62 may expose a portion of the top surface 50T of the sacrificial layer 50. In some embodiments, a patterning process may be performed on the structural layer 60 to remove a portion of the structural layer 60 and form the opening 62. Examples of patterning processes are described above and are not repeated here. In addition, as shown in fig. 16, the openings 64 may be formed simultaneously when the patterning process is performed on the structural layer 60. The opening 64 may expose a portion of the top surface 40T of the second dielectric layer 40, and the opening 64 may separate the mems device 106 from the mems device 108, but the embodiment of the invention is not limited thereto.

Referring to fig. 17, a portion of sacrificial layer 50 is removed through opening 62 to form opening 52, opening 52 exposing a portion of top surface 40T of second dielectric layer 40. For example, a patterning process may be performed on the sacrificial layer 50 to remove a portion of the sacrificial layer 50 and form the opening 52. Examples of patterning processes are described above and are not repeated here.

Referring to fig. 18, a portion of the second dielectric layer 40 is removed through the opening 52 to form a recess structure 42. For example, a patterning process (e.g., including a lateral etching process) may be performed on the second dielectric layer 40 to remove a portion of the second dielectric layer 40 and form the recess structure 42. Examples of patterning processes are described above and are not repeated here.

Referring to fig. 19, the sacrificial layer 50 is removed. For example, a wet etch fabrication process may be performed on the sacrificial layer 50 to remove the sacrificial layer 50. Examples of wet etching processes are described above and are not repeated here. Similarly, since the sacrificial layer 50 has a high etching selectivity to the first dielectric layer 20, the metal layer 30, the second dielectric layer 40 and the structural layer 60, the first dielectric layer 20, the metal layer 30, the second dielectric layer 40 and the structural layer 60 are prevented from being damaged during the process of removing the sacrificial layer 50. In the present embodiment, the sacrificial layer 50 can be completely removed, but the embodiment of the invention is not limited thereto. In some other embodiments, portions of the sacrificial layer 50 may also be retained.

As shown in fig. 19, in some embodiments, a cross-sectional area 62BA of the bottom of the opening 62 is smaller than a cross-sectional area of the top 42TA of the recess structure 42. Further, in some embodiments, the cross-sectional area 62BA of the bottom of the opening 62 is smaller than the cross-sectional area 62TA of the top of the opening 62. Specifically, the cross-sectional area of the opening 62 is not constant at different depths, and may be continuously variable. For example, as shown in fig. 19, in the cross section of this stage, the sidewall 621 and the sidewall 622 of the opening 62 may be two inclined planes, but the embodiment of the invention is not limited thereto.

In the present embodiment, the sidewall 42S of the recess structure 42 is substantially perpendicular to the top surface 40T of the second dielectric layer 40 (and/or the top surface of the first dielectric layer 20), but the embodiment of the invention is not limited thereto. In some other embodiments, the recess structure 42 may also be made similar to the recess structure 44 shown in fig. 9 or the recess structure 46 shown in fig. 10 by adjusting (or controlling) the wet etch fabrication process. The shape and depth of the groove structure 42 can be adjusted according to practical requirements.

Referring to fig. 20, a fill layer 70 is formed. Specifically, at least a portion of the filling layer 70 may be formed in the opening 62 and the recess structure 42, that is, the space where the opening 62 and the recess structure 42 are located may be continuously formed and filled, such that the second dielectric layer 40, the structural layer 60 and the filling layer 70 may define a cavity 80. In other words, the cavity 80 may partially or completely replace the space previously occupied by the sacrificial layer 50 between the second dielectric layer 40 and the structural layer 60. That is, the cavity 80 is located between the second dielectric layer 40, the structural layer 60, and the filler layer 70. Examples of the material and forming method of the filling layer 70 are as described above, and are not repeated here.

The filling layer 70 may be referred to herein as a hole sealing structure between the mems device 106 and the mems device 108. In addition, as shown in fig. 20, a part of the filling layer 70 may be formed on the structural layer 60 and formed on a part of the top surface 40T of the second dielectric layer 40 and the sidewall of the opening 64 exposed by the opening 64, but the embodiment of the invention is not limited thereto.

As shown in fig. 20, in some embodiments, the recess structure 42 may be disposed above the first dielectric layer 20 without exposing the first dielectric layer 20, so that the filling layer 70 may directly contact the second dielectric layer 40, but the embodiment of the invention is not limited thereto.

In a microelectromechanical system (device) that does not generally have a groove structure, during formation (deposition) of the filler layer 70, since the formation (deposition) rate of a portion corresponding to the center of the opening 62 is greater than the formation (deposition) rate of a portion away from the center of the opening 62, a plugged seam is easily formed. In contrast, in the present embodiment, the groove structure 42 is formed through the opening 52, and the opening 52 is formed through the opening 62, so that the groove structure 42 may correspond to the opening 62. Therefore, the groove structure 42 can effectively prevent occurrence of the plugged seams when the filler layer 70 is formed.

At this stage, the MEMS device 106 of the integrated MEMS 1 has been completed. In some embodiments, the MEMS device 106 can be used as a pressure sensor, but the embodiments of the invention are not limited thereto. In the subsequent stages of fig. 21-22, the mems device 108 is addressed.

Referring to fig. 21, in some embodiments, portions of fill layer 70 may be removed to form openings 72, with openings 72 exposing portions of top surface 60T of structural layer 60. For example, as shown in FIG. 21, portions of the fill layer 70 where the MEMS device 108 is intended to be formed may be removed to form the openings 72, but the fill layer 70 where the MEMS device 106 is intended to be formed remains intact.

Next, a metal layer 90 may be formed on the filling layer 70, wherein at least a portion of the metal layer 90 is formed in the opening 72. Specifically, as shown in FIG. 21, the metal layer 90 may include a first portion 90-1 and a second portion 90-2, the first portion 90-1 is in direct contact with the structural layer 60 (i.e., the first portion 90-1 may be disposed in the opening 72), and the second portion 90-2 is in direct contact with the filler layer 70. Examples of the material and forming method of the metal layer 90 may be the same as or similar to those of the metal layer 30, and will not be repeated here.

Referring to fig. 22, in some embodiments, a third dielectric layer 92 may be formed over the filler layer 70 and the metal layer 90. Specifically, as shown in fig. 22, the third dielectric layer 92 may cover the filling layer 70 and the metal layer 90, but the embodiment of the invention is not limited thereto. Examples of the material and forming method of the third dielectric layer 92 may be the same as or similar to those of the first dielectric layer 20 or the second dielectric layer 40, and will not be described herein.

At this stage, the MEMS device 108 of the integrated MEMS 1 has been completed. In some embodiments, the MEMS device 108 may be used as a temperature sensor (temperature sensor), but embodiments of the invention are not limited thereto.

Referring to both fig. 22 and 23, the integrated mems 1 may include mems devices 106 and mems devices 108. The mems device 106 and the mems device 108 may share the same substrate 10. Additionally, MEMS device 106 can function as a pressure sensor and MEMS device 108 can function as a temperature sensor. That is, at least two MEMS devices of different structures or functions may be formed simultaneously in the integrated MEMS 1 according to some embodiments of the present invention. In contrast, in conventional mems devices, the different mems devices need to be individually formed and then integrated with each other through another circuit board. Compared with the traditional micro-electromechanical system, the manufacturing method of the embodiment of the invention can effectively reduce the overall size of the integrated micro-electromechanical system 1 and simplify the manufacturing process steps.

It should be noted that the position and shape of the cavity 80 are not limited to those shown in fig. 23, and may be adjusted according to practical requirements.

Fig. 24-25 are schematic cross-sectional views illustrating various stages in the fabrication of the integrated mems 1 according to some other embodiments. For example, the steps shown in fig. 24 to 25 may replace the steps shown in fig. 17 to 18, but the embodiment of the invention is not limited thereto. In addition, FIGS. 24-25 represent only one MEMS device, which can represent MEMS device 106 or MEMS device 108.

Referring to fig. 24, a portion of sacrificial layer 50 is removed through opening 62 to form opening 52'. Here, the top area of the opening 52' is not equal to the bottom area of the opening 62. In this step, the position and depth of the recess structure to be formed later will be determined, for example, as shown in fig. 24, in this embodiment, the opening 52' may expose a portion of the top surface 20T of the first dielectric layer 20, but the embodiment of the invention is not limited thereto.

Referring to fig. 25, a patterning process (e.g., including a lateral etching process) is performed on the second dielectric layer 40 through the opening 52 'to remove a portion of the second dielectric layer 40 and form the recess structure 42'. Next, the sacrificial layer 50 may be (partially or completely) removed and a fill layer 70 formed, as in the steps of fig. 19 and 20. In the present embodiment, the recess structure 42' may expose a portion of the top surface of the first dielectric layer 20, so the filling layer 70 may directly contact the first dielectric layer 20, but the embodiment of the invention is not limited thereto.

Fig. 26-29 are schematic cross-sectional views illustrating various stages in the fabrication of the integrated mems 1 according to some other embodiments. For example, the steps shown in fig. 26 to 29 may replace the steps shown in fig. 21 to 22, but the embodiment of the invention is not limited thereto. In addition, FIG. 29 shows only one MEMS device 110, and the MEMS device 110 can replace the MEMS device 106 or the MEMS device 108 shown in FIG. 22.

Referring to fig. 26, in some embodiments, portions of fill layer 70 may be removed to form openings 72, with openings 72 exposing portions of top surface 60T of structural layer 60. Next, a metal layer 90 may be formed on the filling layer 70, and the metal layer 90 is formed in the opening 72.

Referring to fig. 27, in some embodiments, a third dielectric layer 92 may be formed over the filler layer 70 and the metal layer 90. Specifically, as shown in fig. 27, the third dielectric layer 92 may cover the filling layer 70 and the metal layer 90, but the embodiment of the invention is not limited thereto.

Referring to fig. 28, in some embodiments, portions of the third dielectric layer 92 may be removed to form openings 94, the openings 94 exposing portions of the top surface 90T of the metal layer 90.

Then, a metal layer 96 may be formed on the third dielectric layer 92, wherein at least a portion of the metal layer 96 is formed in the opening 94. Specifically, as shown in FIG. 28, the metal layer 96 may include a first portion 96-1 and a second portion 96-2, the first portion 96-1 is electrically connected to the metal layer 90 (i.e., the first portion 96-1 may be disposed in the opening 94 and directly contact the metal layer 90), and the second portion 96-2 is electrically insulated from the metal layer 90. Examples of the material and forming method of the metal layer 96 may be the same as or similar to those of the metal layer 30 or the metal layer 90, and will not be repeated here.

Referring to FIG. 29, in some embodiments, a hygroscopic layer 98 may be formed over the second portion 96-2 of the metal layer 96 to form a MEMS device 110. In some embodiments, the material of the absorbent layer 98 may comprise LiCl, se, ge, tiO ₂ 、ZnCr ₂ O ₄ 、MgCr ₂ O ₄ 、Al ₂ O ₃ Epoxy, porous metal oxide film, etc., but the embodiment of the invention is not limited thereto. In some embodiments, the moisture absorption layer 98 may be formed on the second portion 96-2 of the metal layer 96 through a deposition process and a patterning process, but the embodiment of the invention is not limited thereto.

In some embodiments, the mems device 110 may be, for example, a humidity sensor (humidity sensor), but the embodiments of the invention are not limited thereto. In some other embodiments, the MEMS device 110 may be, for example, a gas sensor (gas sensor). For example, the sensing material of the gas sensor may comprise WO ₃ 、SnO ₂ However, the embodiment of the invention is not limited thereto. Mems device 110 may be incorporated into integrated mems 1 shown in fig. 22 in place of or in addition to at least one of mems device 106 and mems device 108 shown in fig. 22. That is, in the embodiments of the present invention, the integrated MEMS 1 can integrate MEMS devices with different sensing functions.

In summary, in some embodiments of the present invention, by providing the groove structure in the second dielectric layer and providing the opening corresponding to the groove structure in the structural layer, the filling layer (i.e. the structure for sealing holes) can be continuously and uniformly filled in the opening and the groove structure to complete the sealing holes. In addition, through the MEMS device and the manufacturing method thereof provided by the embodiment of the invention, the generation of hole sealing joints and hollow structures can be effectively prevented, so that the hole sealing quality is improved and the overall stability is improved. Furthermore, the complex manufacturing process is not needed, so that the manufacturing process time can be effectively shortened and the cost can be reduced.

Furthermore, in accordance with some embodiments of the present invention, at least two MEMS devices of different structures or functions may be formed simultaneously in the integrated MEMS 1. Compared with the traditional micro-electromechanical system, the manufacturing method of the embodiment of the invention can effectively reduce the overall size of the integrated micro-electromechanical system and simplify the manufacturing process steps.

The foregoing outlines features of several embodiments so that those skilled in the art to which the invention pertains may better understand the aspects of the embodiments of the invention. Those skilled in the art will appreciate that they may readily use the conception and the specific embodiment disclosed as a basis for designing or modifying other structures for carrying out the same purposes and/or advantages of the embodiments described herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure. Accordingly, the scope of the invention should be determined from the following claims. In addition, while the present invention has been disclosed in terms of several preferred embodiments, it is not intended to limit the invention.

Reference throughout this specification to features, advantages, or similar language does not imply that all of the features and advantages that may be realized with the present invention should be or are in any single embodiment of the invention. Rather, language referring to the features and advantages is understood to mean that a specific feature, advantage, or characteristic described in connection with an embodiment is included in at least one embodiment of the present invention. Thus, discussion of the features and advantages, and similar language, throughout this specification may, but do not necessarily, refer to the same embodiment.

Furthermore, the described features, advantages, and characteristics of the invention may be combined in any suitable manner in one or more embodiments. One skilled in the relevant art will recognize, in view of the description herein, that the invention may be practiced without one or more of the specific features or advantages of a particular embodiment. In other instances, additional features and advantages may be recognized in certain embodiments that may not be present in all embodiments of the invention.

Claims

1. A method of fabricating a microelectromechanical systems device, comprising:

providing a substrate, wherein the substrate is provided with at least one contact;

forming a first dielectric layer on the substrate, wherein the first dielectric layer has at least one through hole exposing a portion of the top surface of the contact;

Forming at least one first metal layer on the first dielectric layer, wherein at least part of the first metal layer is electrically connected to the contact;

forming a second dielectric layer on the first dielectric layer and the first metal layer;

forming a sacrificial layer on the second dielectric layer;

forming a structural layer on the second dielectric layer and the sacrificial layer;

removing a portion of the structural layer to form a first opening, wherein the first opening exposes a portion of the top surface of the sacrificial layer;

removing a portion of the sacrificial layer through the first opening to form a second opening exposing a portion of a top surface of the second dielectric layer;

removing a portion of the second dielectric layer through the second opening to form a recess structure; wherein the cross-sectional area of the bottom of the first opening is smaller than the cross-sectional area of the top of the groove structure, and the cross-sectional area of the bottom of the first opening is smaller than the cross-sectional area of the top of the first opening;

removing the sacrificial layer; and

and forming a filling layer, wherein at least part of the filling layer is formed in the second opening and the groove structure, and the second dielectric layer, the structural layer and the filling layer define a cavity.

2. The method of manufacturing a microelectromechanical systems device of claim 1, further comprising:

Removing a portion of the filling layer to form a third opening, wherein the third opening exposes a portion of the top surface of the structural layer; and

A second metal layer is formed on the filling layer, wherein at least part of the second metal layer is formed in the third opening.

3. The method of claim 2, wherein the second metal layer comprises a first portion and a second portion, the first portion being in direct contact with the structural layer and the second portion being in direct contact with the fill layer.

4. The method of manufacturing a microelectromechanical systems device of claim 2, further comprising:

a third dielectric layer is formed over the fill layer and the second metal layer.

5. The method of manufacturing a microelectromechanical systems device of claim 4, further comprising:

removing a portion of the third dielectric layer to form a fourth opening exposing a portion of the top surface of the second metal layer; and

A third metal layer is formed on the third dielectric layer, wherein at least a portion of the third metal layer is formed in the fourth opening.

6. The method of claim 5, wherein the third metal layer comprises a first portion and a second portion, the first portion being electrically connected to the second metal layer, the second portion being electrically insulated from the second metal layer.

7. The method of manufacturing a microelectromechanical systems device of claim 6, further comprising:

a hygroscopic layer is formed on the second portion.

8. An integrated microelectromechanical system, comprising:

a plurality of mems devices, wherein each of the mems devices comprises:

a substrate having at least one contact;

a first dielectric layer disposed on the substrate;

at least one first metal layer disposed on the first dielectric layer, and at least part of the first metal layer is electrically connected to the contact;

the second dielectric layer is arranged on the first dielectric layer and the first metal layer and is provided with a groove structure;

the structural layer is arranged on the second dielectric layer and is provided with an opening, wherein the cross section area of the bottom of the opening is smaller than the cross section area of the top of the opening, the opening is arranged corresponding to the groove structure, and the cross section area of the bottom of the opening is smaller than the cross section area of the top of the groove structure; and

a filling layer at least partially disposed in the opening and the groove structure,

wherein the second dielectric layer, the structural layer and the filling layer define a cavity,

wherein the mems devices share the same substrate.

9. The integrated mems of claim 8 wherein one of the mems devices further comprises:

And a second metal layer disposed on a portion of the top surface of the structural layer.

10. The integrated mems of claim 9, wherein the second metal layer comprises a first portion and a second portion, the first portion being in direct contact with the structural layer and the second portion being in direct contact with the fill layer.

11. The integrated mems of claim 9 wherein one of the mems devices further comprises:

and the third dielectric layer is arranged on the filling layer and the second metal layer.

12. The integrated mems of claim 11 wherein one of the mems devices further comprises:

and a third metal layer, wherein at least a portion of the third metal layer is disposed on a portion of a top surface of the second metal layer.

13. The integrated mems of claim 12, wherein the third metal layer comprises a first portion and a second portion, the first portion being electrically connected to the second metal layer, the second portion being electrically isolated from the second metal layer.

14. The integrated microelectromechanical system of claim 13, further comprising:

and the moisture absorption layer is arranged on the second part.

15. The integrated mems of claim 8, wherein the filler layer directly contacts the first dielectric layer or the second dielectric layer.

16. The integrated microelectromechanical system of claim 8, further comprising:

the rest part of the sacrificial layer is arranged between the second dielectric layer and the structural layer,

wherein the cavity is located between the second dielectric layer, the remaining portion of the sacrificial layer, the structural layer and the filler layer.

17. The integrated mems of claim 16, wherein a projection of the opening of the structural layer into the recess structure has an end, a shortest distance of the end to a top of the recess structure in a direction parallel to a top surface of the second dielectric layer being greater than or equal to a thickness of a remaining portion of the sacrificial layer.

18. The integrated mems of claim 8, wherein an angle between a top surface of the second dielectric layer and a sidewall of the recess structure is between 90 and 150 degrees.

19. The integrated mems of claim 8, wherein the sidewalls of the recess structure have an arc.

20. The integrated mems of claim 8, wherein the first metal layer comprises a first portion and a second portion, the first portion being electrically connected to the contact, the second portion being electrically isolated from the contact.

21. The integrated mems of claim 20, wherein the fill layer directly contacts the second portion.

22. The integrated mems of claim 8, wherein a portion of the fill layer is disposed on the structural layer.