CN113074840B - Active pressure sensor and preparation method thereof - Google Patents
Active pressure sensor and preparation method thereof Download PDFInfo
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- CN113074840B CN113074840B CN202110343341.9A CN202110343341A CN113074840B CN 113074840 B CN113074840 B CN 113074840B CN 202110343341 A CN202110343341 A CN 202110343341A CN 113074840 B CN113074840 B CN 113074840B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/005—Measuring force or stress, in general by electrical means and not provided for in G01L1/06 - G01L1/22
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/04—Friction generators
Abstract
The invention discloses an active pressure sensor and a preparation method thereof. The active pressure sensor includes a first metal electrode layer; a second metal electrode layer disposed opposite to the first metal electrode layer; a flexible organic dielectric layer between the first metal electrode layer and the second metal electrode layer; the flexible organic dielectric layer is provided with a plurality of groove structures on one side facing the second metal electrode layer. When the surface of one side, away from the second metal electrode layer, of the first metal electrode layer is under pressure, the flexible organic dielectric layer deforms, the groove bottom and/or the side wall of the groove structure is in contact friction with the second metal electrode to generate charges, and therefore a potential difference is generated between the first metal electrode layer and the second metal electrode layer, and the design of the pressure sensor without power supply of an external circuit is achieved.
Description
Technical Field
The embodiment of the invention relates to a sensor technology, in particular to an active pressure sensor and a preparation method thereof.
Background
With the continuous development of human production and life, people pay more and more attention to their health. With the aging trend of population, social welfare and health care bring heavy burden to the social and economic system. The real-time monitoring can provide physiological signals of human health conditions, such as pulse, heart rate, respiratory rate, plantar pressure and the like, and has important significance for preventing, diagnosing and treating diseases. Therefore, there is an urgent need to develop cost-effective health monitoring techniques.
The foot is the second heart of the human body, and the pressure and the distribution between the sole and the supporting surface during walking can reflect the structure, the function, the motion control and the like of the lower limbs and even the whole body of the human body. Conventional plantar pressure monitoring systems or pressure monitoring systems are limited by power consumption and battery life, and cannot achieve long-term continuous monitoring.
Disclosure of Invention
The invention provides an active pressure sensor and a preparation method thereof, which aim to realize the design of the pressure sensor without external circuit power supply.
In a first aspect, an embodiment of the present invention provides an active pressure sensor, including:
a first metal electrode layer;
a second metal electrode layer disposed opposite to the first metal electrode layer;
a flexible organic dielectric layer between the first metal electrode layer and the second metal electrode layer; the flexible organic dielectric layer is provided with a plurality of groove structures on one side facing the second metal electrode layer;
when the surface of one side, away from the second metal electrode layer, of the first metal electrode layer is under pressure, the flexible organic dielectric layer deforms, the groove bottom and/or the side wall of the groove structure is in contact friction with the second metal electrode to generate charges, and a potential difference is generated between the first metal electrode and the second metal electrode.
Optionally, the groove structure is an arch structure;
the value range of the aperture d of the arch structure is as follows: d is more than or equal to 0.3mm and less than or equal to 0.8mm.
Optionally, the value range of the young's modulus E of the flexible organic dielectric layer is as follows: e is more than or equal to 0.01GPa and less than or equal to 0.1GPa.
Optionally, the flexible organic dielectric layer includes:
a flexible substrate layer;
a flexible porous layer on one side of the flexible substrate layer; the flexible porous layer comprises a plurality of opening structures; the opening structure and the flexible substrate layer form the groove structure.
Optionally, the first metal electrode layer includes a copper foil or an aluminum foil; the value range of the thickness h1 of the first metal electrode layer is as follows: h1 is more than or equal to 10 mu m and less than or equal to 30 mu m;
the second metal electrode layer comprises a copper foil or an aluminum foil; the value range of the thickness h2 of the second metal electrode layer is as follows: h2 is more than or equal to 10 mu m and less than or equal to 30 mu m.
Optionally, the active pressure sensor further includes: a load, a first connecting wire and a second connecting wire;
one end of the load is electrically connected with the first metal electrode layer through the first connecting wire, and the other end of the load is electrically connected with the second metal electrode layer through the second connecting wire.
In a second aspect, an embodiment of the present invention further provides a method for manufacturing an active pressure sensor, where the method is used to manufacture the active pressure sensor according to the first aspect, and the method includes:
providing a mould;
forming the flexible organic dielectric layer in the mold; the flexible organic dielectric layer is provided with a plurality of groove structures on one side facing the second metal electrode layer;
and taking out the flexible organic dielectric layer from the mold, and respectively forming a first metal electrode layer and a second metal electrode layer on two opposite sides of the flexible organic dielectric layer.
Optionally, forming the flexible organic dielectric layer in the mold includes:
placing a first fluid of a liquid high molecular polymer and a curing agent which are mixed according to a first preset proportion into the mould;
curing the first fluid to form a flexible substrate layer;
placing a second fluid of a liquid high molecular polymer and a curing agent mixed in a second preset proportion into one side of the flexible substrate layer in the mold;
placing a rigid solid in the second fluid and solidifying the second fluid;
peeling the rigid solid in the structure after the second fluid is solidified so as to form a flexible porous layer with a plurality of opening structures; the opening structure and the flexible substrate layer form the groove structure.
Optionally, the rigid solid comprises glass beads having a diameter d;
the diameter d of the glass beads has the value range as follows: d is more than or equal to 0.3mm and less than or equal to 0.8mm.
Optionally, removing the flexible organic dielectric layer from the mold, and forming a first metal electrode layer and a second metal electrode layer on two opposite sides of the flexible organic dielectric layer, respectively, includes:
sputtering and depositing a first metal film on the first side of the flexible organic dielectric layer to form a first metal electrode layer;
sputtering and depositing a second metal film on the second side of the organic dielectric layer to form a second metal electrode layer; the first side and the second side are opposite sides of the flexible organic dielectric layer;
or, providing a metal sheet;
cutting or trimming the metal sheet to form the first metal electrode layer and the second metal electrode layer;
and fixing the flexible organic dielectric layer between the first metal electrode layer and the second metal electrode layer.
According to the invention, the flexible organic dielectric layer is arranged between the first metal layer and the second metal layer, and the flexible organic dielectric layer is provided with the plurality of groove structures at one side facing the second metal electrode layer, so that when the surface of one side of the first metal electrode layer, which is far away from the second metal electrode layer, is subjected to pressure, the flexible organic dielectric layer deforms, the groove bottom and/or the side wall of the groove structure is in contact with the second metal electrode layer to generate electric charges through friction, and thus, a potential difference is generated between the first metal electrode layer and the second metal electrode layer, the design of the pressure sensor without external circuit power supply is realized, and the problems that the pressure sensor in the prior art is high in power consumption and cannot be continuously monitored for a long time are solved.
Drawings
Fig. 1 is a schematic structural diagram of an active pressure sensor according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view of an active pressure sensor according to an embodiment of the present invention;
fig. 3-6 are schematic diagrams illustrating operation of an active pressure sensor according to an embodiment of the present invention;
fig. 7 is a graph illustrating experimental results of the magnitude of the open-circuit voltage and the pressure in the active pressure sensor according to an embodiment of the present invention;
FIG. 8 is a graph illustrating the experimental results of the magnitude of the open-circuit voltage and the pressure in the active pressure sensor according to the present invention;
fig. 9 is a flowchart of a method for manufacturing an active pressure sensor according to an embodiment of the present invention;
fig. 10 is a flowchart of a method for manufacturing an active pressure sensor according to another embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not to be construed as limiting the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Fig. 1 is a schematic structural diagram of an active pressure sensor according to an embodiment of the present invention, and fig. 2 is a sectional structural diagram of the active pressure sensor according to the embodiment of the present invention; as shown in fig. 1 and 2, the active pressure sensor includes: a first metal electrode layer 10; a second metal electrode layer 20 disposed opposite to the first metal electrode layer 10; a flexible organic dielectric layer 30 between the first metal electrode layer 10 and the second metal electrode layer 20; the flexible organic dielectric layer 30 is provided with a plurality of groove structures a at a side facing the second metal electrode layer 20.
Fig. 3-6 are schematic diagrams illustrating the operation of an active pressure sensor according to an embodiment of the present invention, in which the active pressure sensor converts mechanical energy into an electrical signal according to the following operation principle: referring to fig. 3, in an initial state, when a side surface B of the first metal electrode layer 10 facing away from the second metal electrode layer 20 is under pressure, the flexible organic dielectric layer 30 deforms, a groove bottom and/or a side wall of the groove structure a contacts and rubs with the second metal electrode layer 20 to generate negative charges on one side of the flexible organic dielectric layer 30, and positive charges on one side of the second metal electrode layer 20; referring to fig. 4, when pressure is released on one side surface B of the first metal electrode layer 10, the groove structure a gradually recovers to its original shape, and due to electrostatic induction, the flexible organic dielectric layer 30 induces a certain positive charge on the first metal electrode layer 10, so that a potential difference is formed between the first metal electrode layer 10 and the second metal electrode layer 20, electrons move from the first metal electrode layer 10 to the second metal electrode layer 20 to balance the potential difference, and a current directed from the second metal electrode layer 20 to the first metal electrode layer 10 is formed; referring to fig. 5, when the pressure is completely released at one side surface of the first metal electrode layer 10, the groove structure a is completely restored, and the flexible organic dielectric layer 30 induces the maximum amount of positive charges on the first metal electrode layer 10; referring to fig. 6, when the surface of the first metal electrode layer 10 on the side away from the second metal electrode layer 20 is stressed again, the groove structure a deforms again, and due to the electrostatic induction, a potential difference is formed between the first metal electrode layer 10 and the second metal electrode layer 20 again, so that electrons are driven to move from the second metal electrode layer 20 to the first metal electrode layer 10, and a current directed from the first metal electrode layer 10 to the second metal electrode layer 20 is formed; referring to fig. 3 again, when the surface of the first metal electrode layer 10 facing away from the second metal electrode layer 20 is subjected to the maximum bearing pressure, the groove bottom and the side wall of the groove structure a contact and rub with the second metal electrode layer 20 again to generate negative charges on the side of the flexible organic dielectric layer 30 and positive charges on the side of the second metal electrode layer 20; therefore, in the reciprocating cycle process of applying acting force, releasing acting force and applying acting force again on the first metal electrode layer 10, electrons reciprocate between the first metal electrode layer 10 and the second metal electrode layer 20 to generate alternating current, the design of no need of external circuit power supply, zero power consumption and active pressure sensors is realized, and the problems that the pressure sensors in the prior art are high in power consumption and cannot continuously monitor for a long time are solved.
It should be noted that fig. 7 is a graph illustrating an experimental result of the magnitude of the open-circuit voltage and the pressure in the active pressure sensor according to the embodiment of the present invention; as shown in fig. 7, in the actual open circuit voltage detection process of the pressure sensor, the open circuit voltage between the first metal electrode layer 10 and the second metal electrode layer 20 measured by the pressure sensor is positively correlated with the magnitude of the pressure, that is, the measured open circuit voltage between the first metal electrode layer 10 and the second metal electrode layer 20 gradually increases with the increase of the external force applied to the first metal electrode layer 10; therefore, the active sensor can reversely represent the magnitude of the applied pressure according to the measured magnitude of the open-circuit voltage; here, a theoretical model is established for explanation:
firstly, in order to simplify the model, as shown in fig. 2-3, it is assumed that the groove structures a of the active pressure sensor are all hemispheres, and each groove structure a is regarded as a unit block, which is N in total; further, it is assumed that when an external force is applied to the side surface B of the first metal electrode layer 10, the first metal electrode layer 10 and the portion between the flexible dielectric layer 30 and the first metal electrode layer 10 are not deformed, and only the groove structure a is deformed; thus, when an external force is applied, the groove structure A generates an inherent elastic force which causes deformation to offset the applied force; when the elastic force and the applied force are equal, the groove structure A reaches balance and does not deform any more; as shown in fig. 2, the open-circuit voltage V between the first metal electrode layer 10 and the second metal electrode layer 20 measured by the pressure sensor is analyzed by simulating the deformation process of the groove structure a by applying a pressure F2 OC The influence of (a); wherein R represents the radius of the groove structure a,
is the deformation angle at equilibrium, theta is expressed in the range 0 to @>
An angle within the range; referring to fig. 2, the arc length corresponding to angle θ is:
R dθ (1)
the area S of the deformation region is:
dS＝2πR cosθ·R dθ (2)
total deformation area A total Comprises the following steps:
transformation from theta to equilibrium transformation angle
The differential recovery elastic force f1 of the groove structure A is as follows:
wherein E is the effective Young's modulus of the groove structure A;
elastic force f formed on the deformation zone elastic Comprises the following steps:
the total elastic force F of the active sensor elastic Comprises the following steps:
from equations (3) and (6), the following relationships can be obtained:
from equation (7), as the applied force increases, the groove structure a is deformed more areas, and then generates a larger elastic force F elastic To balance the applied force; meanwhile, as the applied force is increased, the contact friction between the groove bottom and/or the side wall of the groove structure A and the second metal electrode layer 20 generates negative charges on one side of the flexible organic dielectric layer 30 and positive charges on one side of the second metal electrode layer 20; the positive and negative triboelectric surface charge Q can be expressed as:
wherein σ 0 Represents the surface charge density;
the groove structure a is in contact with and separated from the second metal electrode layer 20, and the potential difference VOC generated between the first metal electrode layer and the second metal electrode layer is:
wherein epsilon 0 Is the dielectric constant of the vacuum, x is the separation distance between the two metal electrode layers, and S is the area of the active sensor.
As can be seen from the above equation (9): due to the elastic force F in the balanced state elastic Equal to the applied force F2, V oc The relationship with the application pressure F2 satisfies:
as shown by equation (10): applying pressures F2 and V oc There is a positive correlation therebetween, that is, as the external pressure increases, the measured open circuit voltage between the first metal electrode layer 10 and the second metal electrode layer 20 increases.
In addition, fig. 8 is a graph of an experimental result of the magnitude of the open-circuit voltage and the pressure in the active pressure sensor according to the embodiment of the present invention; as shown in fig. 8, since the magnitude of the pressure is related to the magnitude of the pressure and the cross-sectional area of the groove structure a, it can be understood that when the cross-sectional area of the groove structure a is constant, the open-circuit voltage between the first metal electrode layer 10 and the second metal electrode layer 20 measured by the pressure sensor is also positively related to the magnitude of the pressure.
Optionally, with continued reference to fig. 1-2, the groove structure a is an arch structure; the value range of the aperture d of the arch structure is as follows: d is more than or equal to 0.3mm and less than or equal to 0.8mm.
The groove structure a in the flexible organic dielectric layer 30 is an arch structure, and the size of the aperture of the arch structure can be selected according to the detection range of different pressures; the arch structure of the pressure sensor in the embodiment has variable aperture, and can be suitable for detection of different pressure ranges. In the actual design of the pressure sensor, if the size of the aperture of the arch structure is too large, the arch structure cannot recover and deform when an external force is applied to the first metal electrode layer 10, so that the detection of the pressure sensor fails; if the aperture size of the arch structure is too small, an external force is applied to the first metal electrode layer 10, and the open-circuit voltage of the pressure sensor cannot be measured; preferably, the aperture d of the arch structure has a value range of: d is more than or equal to 0.3mm and less than or equal to 0.8mm, so that on one hand, the detection of different pressures can be met; on the other hand, the detection sensitivity of the pressure sensor can be regulated and controlled by selecting the arch structures with different aperture sizes. The sensitivity of a pressure sensor is here characterized by the value of the change in voltage per pressure.
Optionally, with continued reference to fig. 1-2, the value range of the young's modulus E of the flexible organic dielectric layer 30 is: e is more than or equal to 0.01GPa and less than or equal to 0.1GPa.
The value range of the young's modulus E of the flexible organic dielectric layer 30 is: e is more than or equal to 0.01GPa and less than or equal to 0.1GPa, so that the overlarge deformation of the flexible organic dielectric layer 30 is met, the large pressure detection range of the pressure sensor is ensured, and the high sensitivity of the pressure sensor is also ensured. By way of example, the material of the flexible organic dielectric layer 30 may include, but is not limited to, one or a combination of polydimethylsiloxane, polycarbosilane, silicone rubber, polytetrafluoroethylene, and polyvinylidene fluoride.
Optionally, with continued reference to fig. 2, the flexible organic dielectric layer 30 includes: a flexible base layer 31; a flexible porous layer 32, the flexible porous layer 32 being located on the flexible base layer 31 side; the flexible porous layer 32 includes a plurality of open structures; the open structure and the flexible substrate layer 31 constitute a groove structure a.
The flexible substrate layer 31 is arranged to ensure that the plurality of opening structures in the flexible porous layer 32 are regular arch structures to form the flexible organic dielectric layer 30 having the groove structures arranged in an array, so as to ensure a larger deformation amount of the flexible organic dielectric layer 30 under the action of external force.
Optionally, with continued reference to fig. 1-2, the first metal electrode layer 10 comprises a copper foil or an aluminum foil; the value range of the thickness h1 of the first metal electrode layer 10 is: h1 is more than or equal to 10 mu m and less than or equal to 30 mu m; the second metal electrode layer 20 includes a copper foil or an aluminum foil; the thickness h2 of the second metal electrode layer 20 has a value range of: h2 is more than or equal to 10 mu m and less than or equal to 30 mu m. The first metal electrode layer 10 and the second metal electrode layer 20 both have appropriate thicknesses, so that the light and thin design of the flexible organic dielectric layer 30 is realized, and the wearable measurement of the active pressure sensor is facilitated.
Optionally, referring to fig. 1-6, the active pressure sensor further comprises a load R, a first connecting wire and a second connecting wire; one end of the load R is electrically connected to the first metal electrode layer 10 through a first connection wire, and the other end of the load R is electrically connected to the second metal electrode layer 20 through a second connection wire. Thus, during the reciprocating cycle of applying force to the first metal electrode layer 10-releasing force-applying force again, a certain current exists between the first metal electrode layer 10 and the second metal electrode layer 20, the current flows through the load R, and energy is released from the load R.
Based on the same inventive concept, an embodiment of the present invention further provides a method for manufacturing an active pressure sensor, fig. 9 is a flowchart of a method for manufacturing an active pressure sensor, as shown in fig. 9, the method for manufacturing an active pressure sensor according to an embodiment of the present invention includes the following steps:
s110, providing a mold;
illustratively, the mold may be made of an acrylic plate, cut by a laser cutter, and fixed using a double-sided tape to form a rectangular parallelepiped module.
S120, forming a flexible organic dielectric layer in the mold;
the flexible organic dielectric layer is provided with a plurality of groove structures on one side facing the second metal electrode layer; specifically, a rigid solid is added into the liquid high molecular polymer and the curing agent, the liquid high molecular polymer is solidified for a preset time by standing, then the rigid solid is taken out, and the flexible organic dielectric layer with a plurality of groove structures is formed on one side facing the second metal electrode layer.
S130, taking out the flexible organic dielectric layer from the mold, and respectively forming a first metal electrode layer and a second metal electrode layer on two opposite sides of the flexible organic dielectric layer.
The first metal electrode layer and the second metal electrode layer are formed on two sides of the flexible organic dielectric layer, so that when acting force is applied to one side of the first metal electrode layer, the flexible organic dielectric layer deforms, the groove bottom and the side wall of the groove structure in the flexible organic dielectric layer are in contact friction with the second metal electrode layer, in the process of releasing acting force and applying acting force again in a reciprocating cycle process, due to electrostatic induction, electromotive force is generated between the first metal electrode layer and the second metal electrode layer, electrons reciprocate between the first metal electrode layer and the second metal electrode layer to generate alternating current, and the design of an active pressure sensor without power supply of an external circuit, zero power consumption and active pressure is realized.
Optionally, on the basis of the foregoing embodiment, a process for manufacturing a flexible organic dielectric layer is further refined, and fig. 10 is a flowchart of a method for manufacturing another active pressure sensor according to an embodiment of the present invention; as shown in fig. 10, the preparation method includes:
s210, providing a mold;
s220, putting a first fluid of the liquid high-molecular polymer and the curing agent which are mixed according to a first preset proportion into a mould;
s230, solidifying the first fluid to form a flexible substrate layer;
wherein, the liquid high molecular polymer can be organic silicon rubber; the curing agent can be a silica gel curing agent; specifically, a first fluid formed by 2ml of organic silicon rubber and 40 mul of silica gel curing agent is placed into a mold and stirred uniformly, so that the organic silicon rubber is uniformly paved at the bottom of the mold and stands for about 2 hours, and a flexible substrate layer with the thickness of 0.5mm is formed after the organic silicon rubber is cured.
S240, placing a second fluid of the liquid high-molecular polymer and the curing agent mixed according to a second preset proportion into one side of the flexible substrate layer in the mold;
wherein, the liquid high molecular polymer can be organic silicon rubber; the curing agent can be a silica gel curing agent; specifically, a second fluid formed by 5ml of organic silicon rubber and 100 mul of silica gel curing agent is placed on the flexible substrate layer, stirred uniformly and kept stand for about 1min until the organic silicon rubber is uniformly spread on the flexible substrate layer.
S250, placing a rigid solid in the second fluid, and solidifying the second fluid;
wherein the rigid solid comprises glass beads having a diameter d; the diameter d of the glass beads has the value range: d is more than or equal to 0.3mm and less than or equal to 0.8mm. Glass beads of different diameters were uniformly spread on the second fluid, the beads were entrapped in the second fluid by gravity, and left for about 2 hours until the second fluid was solidified. Thus, glass beads with different sizes are selected to form different flexible organic dielectric layers in the following process, so that detection of the pressure sensor in different pressure size ranges is realized.
S260, stripping the rigid solid in the structure after the second fluid is solidified so as to form a flexible porous layer with a plurality of opening structures; the opening structure and the flexible substrate layer form a groove structure.
Wherein, when the second fluid is completely solidified, the glass marble is taken down from the solidified second fluid, and a flexible porous layer is formed on the flexible substrate layer; the flexible basal layer can play a role in supporting the flexible porous layer, and a plurality of opening structures in the flexible porous layer are guaranteed to be regular arch-shaped structures so as to form a flexible organic dielectric layer with groove structures arranged in an array mode, and the larger deformation amount of the flexible organic dielectric layer under the action of external force is guaranteed.
S270, taking the flexible organic dielectric layer out of the mold, and sputtering and depositing a first metal film on the first side of the flexible organic dielectric layer to form a first metal electrode layer; sputtering and depositing a second metal film on the second side of the flexible organic dielectric layer to form a second metal electrode layer; the first side and the second side are opposite sides of the flexible organic dielectric layer;
wherein, a first metal electrode layer and a second metal electrode layer which are compact and smooth can be obtained through sputtering deposition; or a first metal electrode layer and a second metal electrode layer are formed by providing a metal sheet and then cutting or cutting the metal sheet; and two wires are respectively led out from the first metal electrode layer and the second metal electrode layer and connected with a load to finish the preparation of the pressure sensor. Therefore, when acting force is applied to one side of the first metal electrode layer in the pressure sensor, the flexible organic dielectric layer deforms, the groove bottom and the side wall of the groove structure in the flexible organic dielectric layer are in contact friction with the second metal electrode, in the reciprocating circulation process of releasing acting force and applying acting force again, due to electrostatic induction, electromotive force is generated between the first metal electrode layer and the second metal electrode layer, electrons reciprocate between the first metal electrode and the second metal electrode to generate alternating current, and the design of an active pressure sensor without external circuit power supply, zero power consumption and active pressure sensor design is realized.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (9)
1. An active pressure sensor, comprising:
a first metal electrode layer;
a second metal electrode layer disposed opposite to the first metal electrode layer;
a flexible organic dielectric layer between the first metal electrode layer and the second metal electrode layer; the flexible organic dielectric layer is provided with a plurality of groove structures on one side facing the second metal electrode layer;
when the surface of one side, away from the second metal electrode layer, of the first metal electrode layer is under pressure, the flexible organic dielectric layer deforms, the groove bottom and/or the side wall of the groove structure is in contact friction with the second metal electrode layer to generate charges, and a potential difference is generated between the first metal electrode layer and the second metal electrode layer;
the groove structure is an arch structure;
the value range of the aperture d of the arch structure is as follows: d is more than or equal to 0.3mm and less than or equal to 0.8mm.
2. The active pressure sensor of claim 1, wherein the flexible organic dielectric layer has a young's modulus E ranging from: e is more than or equal to 0.01GPa and less than or equal to 0.1GPa.
3. The active pressure sensor of claim 1, wherein the flexible organic dielectric layer comprises:
a flexible substrate layer;
a flexible porous layer on one side of the flexible substrate layer; the flexible porous layer comprises a plurality of opening structures; the opening structure and the flexible substrate layer form the groove structure.
4. The active pressure sensor of claim 1, wherein the first metal electrode layer comprises a copper foil or an aluminum foil; the value range of the thickness h1 of the first metal electrode layer is as follows: h1 is more than or equal to 10 mu m and less than or equal to 30 mu m;
the second metal electrode layer comprises a copper foil or an aluminum foil; the value range of the thickness h2 of the second metal electrode layer is as follows: h2 is more than or equal to 10 mu m and less than or equal to 30 mu m.
5. The active pressure sensor of any of claims 1-4, further comprising: a load, a first connecting wire and a second connecting wire;
one end of the load is electrically connected with the first metal electrode layer through the first connecting wire, and the other end of the load is electrically connected with the second metal electrode layer through the second connecting wire.
6. A method for manufacturing an active pressure sensor, the method being used for manufacturing the active pressure sensor as claimed in any one of claims 1 to 5, the method comprising:
providing a mould;
forming the flexible organic dielectric layer in the mold; the flexible organic dielectric layer is provided with a plurality of groove structures on one side facing the second metal electrode layer;
and taking out the flexible organic dielectric layer from the mold, and respectively forming a first metal electrode layer and a second metal electrode layer on two opposite sides of the flexible organic dielectric layer.
7. The method of making an active pressure sensor of claim 6, wherein forming the flexible organic dielectric layer in the mold comprises:
placing a first fluid of a liquid high molecular polymer and a curing agent which are mixed according to a first preset proportion into the mould;
curing the first fluid to form a flexible substrate layer;
placing a second fluid of a liquid high molecular polymer and a curing agent mixed in a second preset proportion into one side of the flexible substrate layer in the mold;
placing a rigid solid in the second fluid and solidifying the second fluid;
peeling the rigid solid in the structure after the second fluid is solidified to form a flexible porous layer with a plurality of opening structures; the opening structure and the flexible substrate layer form the groove structure.
8. The method of making an active pressure sensor of claim 7, wherein the rigid solid comprises glass beads having a diameter d;
the diameter d of the glass beads has the value range as follows: d is more than or equal to 0.3mm and less than or equal to 0.8mm.
9. The method of claim 6, wherein removing the flexible organic dielectric layer from the mold and forming a first metal electrode layer and a second metal electrode layer on opposite sides of the flexible organic dielectric layer respectively comprises:
sputtering and depositing a first metal film on the first side of the flexible organic dielectric layer to form a first metal electrode layer;
sputtering and depositing a second metal film on the second side of the organic dielectric layer to form a second metal electrode layer; the first side and the second side are opposite sides of the flexible organic dielectric layer;
or, providing a metal sheet;
cutting or trimming the metal sheet to form the first metal electrode layer and the second metal electrode layer; fixing the flexible organic dielectric layer between the first metal electrode layer and the second metal electrode layer.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN204214576U (en) * | 2014-11-11 | 2015-03-18 | 纳米新能源（唐山）有限责任公司 | Friction electricity and piezo-electric composite sensor |
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