CN113067571A - Silicon carbide MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit with improved turn-off characteristic and control method - Google Patents
Silicon carbide MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit with improved turn-off characteristic and control method Download PDFInfo
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 151
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000012053 enzymatic serum creatinine assay Methods 0.000 description 1
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- H03K17/16—Modifications for eliminating interference voltages or currents
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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Abstract
The invention provides a silicon carbide MOSFET drive circuit with improved turn-off characteristics and a control method. A drive circuit, comprising: the PWM driving module is used for sending a driving signal to the silicon carbide MOSFET based on the received PWM signal, and further comprises: a voltage change rate control module and/or a current change rate control module; according to the invention, by adding the voltage change rate control module, the voltage change rate can be improved through the voltage change rate control module in the non-overshoot period of the power-off process of the silicon carbide MOSFET, the change speed of the drain-source voltage is accelerated, and the change time of the drain-source voltage is shortened, so that the power-off speed is improved, and the power-off loss is reduced; through the current change rate module, the current change rate can be improved through the current change rate control module in the non-overshoot segment of the power-off process of the silicon carbide MOSFET, the change speed of the drain current is accelerated, and the change time of the drain current is shortened, so that the turn-off speed is increased, and the turn-off loss is reduced.
Description
Technical Field
The present invention relates to a silicon carbide MOSFET driving circuit, and more particularly, to a silicon carbide MOSFET driving circuit and a control method for improving turn-off characteristics.
Background
Compared with the traditional silicon-based power device, the silicon carbide power device has the advantages of high switching speed, low loss, high temperature resistance level and the like, and has wide application prospects in the fields of electric automobiles, aerospace, wind power generation and the like.
In power electronics, parasitic inductance and parasitic capacitance exist in the loop and in the silicon carbide MOSFET device itself due to wiring, packaging, etc. The silicon carbide MOSFET has a fast switching speed, and under the condition that a circuit has parasitic inductance and parasitic capacitance, the very high voltage change rate and current change rate of the silicon carbide MOSFET easily cause the problems of voltage overshoot, current overshoot and oscillation.
For a conventional driving circuit, to reduce the turn-off voltage overshoot, the driving resistance needs to be increased, and the turn-off loss is increased. Reducing the drive resistance reduces turn-off losses and increases turn-off voltage overshoot. Turn-off losses and turn-off voltage overshoot are mutually constrained. The conventional driving circuit cannot realize low turn-off loss and lower turn-off voltage overshoot at the same time, and needs to be improved.
The active driving circuit can realize better switching characteristics than the traditional driving circuit by changing driving parameters in the switching process, and reduce the overshoot of the turn-off voltage while reducing the turn-off loss. Currently, the common active driving circuits mainly include: a variable driving resistance driving circuit, a variable driving voltage driving circuit, a variable driving current driving circuit, and the like. However, the above active driving circuit has the following drawbacks:
(1) the variable driving resistance driving circuit realizes the adjustment of the switching speed mainly by changing the resistance value of the driving resistance in the switching process, thereby reducing the overshoot while realizing low loss. The change of the resistance value of the driving resistor is mainly realized by an integrated array or discrete elements, and the device is complex.
(2) The variable driving voltage driving circuit adjusts the switching speed by changing the driving voltage in the switching process, so that low loss and low overshoot are realized, but the driving voltage adjusting device is complex, and if the driving voltage adjusting device fails, a silicon carbide MOSFET (metal oxide semiconductor field effect transistor) is out of control, and a new unreliable factor is introduced.
(3) The variable driving current driving circuit adjusts the switching speed by changing the driving current in the switching process, thereby reducing the overshoot while realizing high switching speed and low loss. The realization of the variable driving current driving circuit needs a current amplifying device, and the compatibility with the traditional voltage source type driving circuit is poor.
Disclosure of Invention
In order to solve at least one of the above technical problems, the present invention provides a silicon carbide MOSFET driving circuit and a control method for improving turn-off characteristics.
The technical scheme of the invention is realized as follows:
in a first aspect, embodiments of the present invention provide a silicon carbide MOSFET driver circuit with improved turn-off characteristics, comprising:
the PWM driving module is used for sending a driving signal to the silicon carbide MOSFET based on the received PWM signal so as to control the on-off of the silicon carbide MOSFET; further comprising:
the voltage change rate control module comprises a voltage change rate control circuit, and the on-off state of the voltage change rate control circuit is changed based on the change of the drain-source voltage of the silicon carbide MOSFET so as to change the drain-source voltage change rate of the silicon carbide MOSFET; and/or
And the current change rate control module comprises a current change rate control circuit, and the on-off state of the current change rate control circuit is changed based on the change of the drain current of the silicon carbide MOSFET so as to change the drain current change rate of the silicon carbide MOSFET.
In a preferred embodiment, the changing the on-off state of the voltage change rate control circuit based on the change of the drain-source voltage of the silicon carbide MOSFET to change the drain-source voltage change rate of the silicon carbide MOSFET includes:
when the drain-source voltage rises to a first set value, the voltage change rate control circuit is switched on to increase the drain-source voltage change rate of the silicon carbide MOSFET;
and when the drain-source voltage rises to a second set value, the voltage change rate control circuit is switched off so as to reduce the drain-source voltage change rate of the silicon carbide MOSFET.
As a preferred embodiment, changing the on-off state of the current change rate control circuit based on a change in the drain current of the silicon carbide MOSFET to change the drain current change rate of the silicon carbide MOSFET includes:
when the drain current drops to a third set value, the current change rate control circuit is switched on to increase the drain current change rate;
when the drain current drops to a fourth set value, the current change rate control circuit is switched off to reduce the drain current change rate.
As a preferred embodiment, the voltage change rate control module further includes a drain-source voltage detection circuit, two input terminals of the drain-source voltage detection circuit are respectively connected to the drain and the source of the silicon carbide MOSFET, an output terminal of the drain-source voltage detection circuit is connected to an input terminal of the voltage change rate control circuit, and an output terminal of the voltage change rate control circuit is connected to the gate of the silicon carbide MOSFET.
As a preferred implementation, the current change rate control module further includes a drain current detection circuit, an input terminal of the drain current detection circuit is connected to a drain of the silicon carbide MOSFET, an output terminal of the drain current detection circuit is connected to an input terminal of the current change rate control circuit, and an output terminal of the current change rate control circuit is connected to a gate of the silicon carbide MOSFET.
In a preferred embodiment, the voltage change rate control circuit includes: the first voltage comparison module, the first auxiliary MOSFET and the first RC parallel circuit;
the input end of the first voltage comparison module is connected with the output end of the drain-source voltage detection circuit, and the two output ends of the first voltage comparison module are respectively connected with the grid and the source of the first auxiliary MOSFET;
the first RC parallel circuit comprises a first resistor and a first capacitor which are connected in parallel; one end of the first RC parallel circuit is grounded, and the other end of the first RC parallel circuit is connected with the source electrode of the first auxiliary MOSFET;
the drain electrode of the first auxiliary MOSFET is connected with the grid electrode of the silicon carbide MOSFET.
In a preferred embodiment, the current change rate control circuit includes:
the second voltage comparison module, the second auxiliary MOSFET and the second RC parallel circuit; the input end of the second voltage comparison module is connected with the output end of the drain current detection circuit, and the two output ends of the second voltage comparison module are respectively connected with the grid electrode and the source electrode of the second auxiliary MOSFET;
the second RC parallel circuit comprises a second resistor and a second capacitor which are connected in parallel; one section of the second RC parallel circuit is grounded, and the other end of the second RC parallel circuit is connected with the source electrode of the second auxiliary MOSFET;
and the drain electrode of the second auxiliary MOSFET is connected with the grid electrode of the silicon carbide MOSFET.
As a preferred embodiment, the first voltage comparison module includes: the first grid electrode driving circuit comprises a first voltage comparator, a second voltage comparator, a first AND gate and a first grid electrode driving circuit;
the inverting input end of the first voltage comparator is connected with the non-inverting input end of the second voltage comparator to serve as the input end of the first voltage comparison module, and the non-inverting input end of the first voltage comparator is connected with the output end of the drain-source voltage detection circuit;
the non-inverting input end of the first voltage comparator is connected with a first reference voltage, and the inverting input end of the second voltage comparator is connected with a second reference voltage;
the output end of the first voltage comparator is connected with the first input end of the first AND gate; the output end of the second voltage comparator is connected with the second input end of the first AND gate;
the output end of the first AND gate is connected with the input end of the first gate drive circuit; two output ends of the first gate driving circuit are used as two output ends of the first voltage comparison module and are respectively connected to the gate and the source of the first auxiliary MOSFET.
As a preferred embodiment, the second voltage comparison module includes: the first grid driving circuit comprises a first voltage comparator, a second voltage comparator, a first AND gate and a second grid driving circuit;
the reverse phase input end of the third voltage comparator is connected with the non-phase input end of the fourth voltage comparator to serve as the input end of the second voltage comparison module, and the non-phase input end of the third voltage comparator is connected with the output end of the drain current detection circuit;
the non-inverting input end of the third voltage comparator is connected with a third reference voltage, and the inverting input end of the fourth voltage comparator is connected with a fourth reference voltage;
the output end of the third voltage comparator is connected with the first input end of the second AND gate, and the output end of the fourth voltage comparator is connected with the second input end of the second AND gate;
the output end of the second and gate is connected with the input end of the second gate driving circuit, and the two output ends of the second gate driving circuit are used as the two output ends of the second voltage comparison module and are respectively connected to the gate and the source of the second auxiliary MOSFET.
As a preferred embodiment, the drain-source voltage detection circuit includes: a third resistor, a fourth resistor and a first operational amplifier;
one end of the third resistor is used as one input end of the drain-source voltage detection circuit and connected with the drain electrode of the silicon carbide MOSFET, and the other end of the third resistor is connected with one end of the fourth resistor and the non-inverting input end of the first operational amplifier;
the other end of the fourth resistor is used as the other input end of the drain-source voltage detection circuit and is connected with the source electrode of the silicon carbide MOSFET;
and the inverting input end of the first operational amplifier is connected with the output end of the first operational amplifier to be used as the output end of the drain-source voltage detection circuit.
In a preferred embodiment, the drain current detection circuit includes: the current detection resistor comprises a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor and a second operational amplifier;
one end of the current detection resistor is connected with the silicon carbide MOSFET source electrode and one end of the fifth resistor; the other end of the current detection resistor is connected with one end of the seventh resistor;
the other end of the fifth resistor is connected with one end of the sixth resistor and the non-inverting input end of the second operational amplifier, and the other end of the sixth resistor is grounded;
the other end of the seventh resistor is connected with one end of the eighth resistor and the inverting input end of the second operational amplifier, and the other end of the eighth resistor is connected with the output end of the second operational amplifier to serve as the output end of the drain current detection circuit.
In a second aspect, an embodiment of the present invention provides a control method for a silicon carbide MOSFET driving circuit, including:
based on the received PWM signal, sending a driving signal to the silicon carbide MOSFET so as to control the on-off of the silicon carbide MOSFET; further comprising:
changing the on-off state of the voltage change rate control circuit based on the change of the drain-source voltage of the silicon carbide MOSFET so as to change the drain-source voltage change rate of the silicon carbide MOSFET; and/or
And changing the on-off state of the current change rate control circuit based on the change of the drain current of the silicon carbide MOSFET so as to change the drain current change rate of the silicon carbide MOSFET.
In a preferred embodiment, the changing the on-off state of the voltage change rate control circuit based on the change of the drain-source voltage of the silicon carbide MOSFET to change the drain-source voltage change rate of the silicon carbide MOSFET includes:
when the drain-source voltage rises to a first set value, the voltage change rate control circuit is switched on to increase the drain-source voltage change rate of the silicon carbide MOSFET;
and when the drain-source voltage rises to a second set value, the voltage change rate control circuit is switched off so as to reduce the drain-source voltage change rate of the silicon carbide MOSFET.
In a preferred embodiment, the changing the on/off state of the current change rate control circuit based on the change in the drain current of the silicon carbide MOSFET to change the drain current change rate of the silicon carbide MOSFET includes:
when the drain current drops to a third set value, the current change rate control circuit is switched on to increase the drain current change rate;
when the drain current drops to a fourth set value, the current change rate control circuit is switched off to reduce the drain current change rate.
Compared with the prior art, the invention has at least the following advantages:
according to the embodiment of the invention, by adding the voltage change rate control module, the voltage change rate can be improved through the voltage change rate control module in the non-overshoot segment of the power-off process of the silicon carbide MOSFET, the change speed of the drain-source voltage is accelerated, and the change time of the drain-source voltage is shortened, so that the turn-off speed is improved, and the turn-off loss is reduced;
through the current change rate module, the current change rate can be improved through the current change rate control module in the non-overshoot segment of the power-off process of the silicon carbide MOSFET, the change speed of the drain current is accelerated, and the change time of the drain current is shortened, so that the turn-off speed is increased, and the turn-off loss is reduced.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the invention and together with the description serve to explain the principles of the invention.
FIG. 1 is a schematic block diagram of the driving circuit of the present invention;
FIG. 2 is a block diagram schematically illustrating the structure of the driving circuit according to the present invention;
FIG. 3 is a schematic diagram of the circuit structure and connection relationship of the driving circuit according to the present invention;
FIG. 4 is a schematic diagram of a first voltage comparison module according to the present invention;
FIG. 5 is a schematic diagram illustrating a second voltage comparison module according to the present invention.
FIG. 6 is a schematic voltage-current waveform diagram of the silicon carbide MOSFET driver circuit of the present invention during various periods of turn-off;
FIG. 7 is a comparison of the drain-source voltage waveforms of the driving circuit of the present invention and the conventional driving circuit driving the turn-off process of the SiC MOSFET;
FIG. 8 is a comparison of the drain current waveforms during the turn-off of the SiC MOSFET driven by the driving circuit of the present invention and the conventional driving circuit;
fig. 9 is a comparison of gate current during turn-off of the sic MOSFET driven by the driving circuit of the present invention and a conventional driving circuit.
FIG. 10 is a schematic flow diagram of the method of the present invention;
in the figure: a PWM driving module 1; a voltage change rate control module 2; a current change rate control module 3; a PWM drive circuit 11; a voltage change rate control circuit 21; a drain-source voltage detection circuit 22; a current change rate control circuit 31; the drain current detection circuit 32.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are for purposes of illustration only and are not to be construed as limitations of the invention. It should be noted that, for convenience of description, only the portions related to the present invention are shown in the drawings.
In addition, the embodiments of the present invention and the features of the embodiments may be combined with each other without conflict. The present invention will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
It should be noted that, the step numbers in the text are only for convenience of explanation of the specific embodiments, and do not serve to limit the execution sequence of the steps. The method provided by the embodiment can be executed by a related server, and the following description takes an electronic device such as a server or a computer as an example of an execution subject.
Example one
Referring to fig. 1 and2, an embodiment of the present invention provides a silicon carbide MOSFET driving circuit with improved turn-off characteristics, including:
the PWM driving module 1 is used for sending a driving signal to the silicon carbide MOSFET M0 based on the received PWM signal so as to control the on-off of the silicon carbide MOSFET M0; further comprising:
the voltage change rate control module 2 comprises a voltage change rate control circuit 21, and the on-off state of the voltage change rate control circuit 21 is changed based on the change of the drain-source voltage of the silicon carbide MOSFET M0 so as to change the drain-source voltage change rate of the silicon carbide MOSFET M0; and/or
The current change rate control module 3 comprises a current change rate control circuit 31, and the on-off state of the current change rate control circuit 31 is changed based on the change of the drain current of the silicon carbide MOSFET M0 so as to change the drain current change rate of the silicon carbide MOSFET M0.
According to the embodiment of the invention, on the basis of the existing drive circuit, by adding the voltage change rate control module 2, the voltage change rate can be improved through the voltage change rate control module 2 in the non-overshoot segment of the power-off process of the silicon carbide MOSFET M0, the change speed of the drain-source voltage is accelerated, and the change time of the drain-source voltage is shortened, so that the turn-off speed is improved, and the turn-off loss is reduced;
by adding the current change rate module, the current change rate can be improved through the current change rate control module 3 in the non-overshoot period of the power-off process of the silicon carbide MOSFET M0, the change speed of the drain current is accelerated, and the change time of the drain current is shortened, so that the power-off speed is improved, and the power-off loss is reduced.
Therefore, in the overshoot period of the power-off process of the silicon carbide MOSFET M0, the voltage change rate control module 2 and the current change rate control module 3 can be cut off, the traditional drive circuit is adopted to reduce the over-charge of the turn-off voltage, and the efficiency and the reliability of the silicon carbide MOSFET M0 are improved.
Referring to fig. 1 and2, PWM driving is a preferred embodiment of the present embodimentThe module 1 comprises a PWM drive circuit 11 and a drive resistor RgThe input end of the PWM driving circuit 11 is connected to the controller for receiving a PWM signal (PWM signal), and the output end of the PWM driving circuit 11 is connected to the driving resistor RgIs connected to drive a resistor RgAnd the other end of the same is connected with the grid electrode of the silicon carbide MOSFET M0 as the output end of the PWM driving module 1. The PWM drive circuit 11 may be formed of an existing drive circuit.
As an optional implementation manner of this embodiment, changing the on-off state of the voltage change rate control circuit 21 based on the change of the drain-source voltage of the silicon carbide MOSFET M0 to change the drain-source voltage change rate of the silicon carbide MOSFET M0 includes:
when the drain-source voltage rises to a first set value, the voltage change rate control circuit 21 turns on to increase the drain-source voltage change rate of the silicon carbide MOSFET M0; the rising speed of the drain-source electrode voltage is increased, and the rising time of the drain-source electrode voltage is shortened, so that the turn-off loss is reduced;
when the drain-source voltage rises to a second set point, the voltage rate of change control circuit 21 is turned off to reduce the rate of change of the drain-source voltage of the silicon carbide MOSFET M0, causing the turn-off speed to decrease, thereby reducing voltage overshoot.
Referring to fig. 1 to 5, as a preferred implementation manner of this embodiment, the voltage change rate control module 2 further includes a drain-source voltage detection circuit 22, two input terminals of the drain-source voltage detection circuit 22 are respectively connected to the drain and the source of the silicon carbide MOSFET M0, an output terminal of the drain-source voltage detection circuit 22 is connected to an input terminal of the voltage change rate control circuit 21, and an output terminal of the voltage change rate control circuit 21 is connected to the gate of the silicon carbide MOSFET M0.
The voltage change rate control circuit 21 includes: a first voltage comparison module, a first auxiliary MOSFET M1 and a first RC parallel circuit;
the input end of the first voltage comparison module is connected with the output end of the drain-source voltage detection circuit 22, and the two output ends of the first voltage comparison module are respectively connected to the gate and the source of the first auxiliary MOSFET M1;
the first RC parallel circuit comprises a first resistor R1 and a first capacitor C1 which are connected in parallel; one end of the first RC parallel circuit is grounded, and the other end of the first RC parallel circuit is connected with the source electrode of the first auxiliary MOSFET M1;
the drain of the first auxiliary MOSFET is connected to the gate of the silicon carbide MOSFET M0.
The first voltage comparison module includes: a first voltage comparator CP1, a second voltage comparator CP2, a first AND gate AND1, AND a first gate driving circuit GD 1;
the inverting input end of the first voltage comparator CP1 and the non-inverting input end of the second voltage comparator CP2 are connected to serve as the input end of the first voltage comparison module, and are connected to the output end of the drain-source voltage detection circuit 22;
the non-inverting input terminal of the first voltage comparator CP1 is connected to a first reference voltage Vref1An inverting input terminal of the second voltage comparator CP2 is connected with a second reference voltage Vref2Connecting;
an output end of the first voltage comparator CP1 is connected to a first input end of the first AND gate AND 1; the output end of the second voltage comparator CP2 is connected to the second input end of the first AND gate AND 1;
the output end of the first AND gate AND1 is connected to the input end of the first gate driving circuit GD 1; two output terminals of the first gate driving circuit GD1 are used as two output terminals of the first voltage comparing module, and are respectively connected to the gate and the source of the first auxiliary MOSFET M1.
Referring to fig. 1 to 5, in the embodiment of the present invention, the bus voltage is VDCIn an embodiment of the present invention, the first set value is k1*VDC(ii) a The second set value is k2*VDC(ii) a When the drain-source voltage V between the drain-source electrodes of the silicon carbide MOSFET M0dsRises to a first set value k1*VDCAt this time, the first voltage comparison module outputs a high level signal, the first auxiliary MOSFET M1 is turned on, and a part of the gate current charges the first capacitor C1 via the first auxiliary MOSFET M1A first resistor R1 connected with the capacitor C1 in parallel is shunted, the grid current is increased, the change rate of the drain-source voltage is increased, the rising speed of the drain-source voltage is accelerated, and the turn-off loss is reduced; when drain-source voltage VdsRises to a second set value k2*VDCAt this time, the first voltage comparison module outputs a low level signal, the first auxiliary MOSFET M1 is turned off, the gate current is reduced, and the turn-off speed is reduced, thereby reducing the voltage overshoot.
Referring to fig. 1 to 5, as an alternative implementation of this embodiment, changing the on-off state of the current change rate control circuit 31 based on the change of the drain current of the silicon carbide MOSFET M0 to change the drain current change rate of the silicon carbide MOSFET M0 includes:
when the drain current drops to a third set value, the current change rate control circuit 31 is turned on to increase the drain current change rate, accelerate the drain current drop speed, and shorten the drain current drop time, thereby reducing the turn-off loss;
when the drain current decreases to a fourth setting value, the current change rate control circuit 31 is turned off to reduce the drain current change rate, reduce the drain current decrease speed, and reduce the off current oscillation.
As a preferred implementation manner of this embodiment, the current change rate control module 3 further includes a drain current detection circuit 32, an input terminal of the drain current detection circuit 32 is connected to the drain of the silicon carbide MOSFET M0, an output terminal of the drain current detection circuit 32 is connected to an input terminal of the current change rate control circuit 31, and an output terminal of the current change rate control circuit 31 is connected to the gate of the silicon carbide MOSFET M0.
The current change rate control circuit 31 includes:
the second voltage comparison module, the second auxiliary MOSFET M2 and the second RC parallel circuit; the input end of the second voltage comparison module is connected to the output end of the drain current detection circuit 32, and two output ends of the second voltage comparison module are respectively connected to the gate and the source of the second auxiliary MOSFET M2; the second RC parallel circuit comprises a second resistor R2 and a second capacitor C2 which are connected in parallel; one section of the second RC parallel circuit is grounded, and the other end of the second RC parallel circuit is connected with the source electrode of the second auxiliary MOSFET M2; the drain of the second auxiliary MOSFET M2 is connected to the gate of the silicon carbide MOSFET M0.
The second voltage comparison module includes: a third voltage comparator CP3, a fourth voltage comparator CP4, a second AND gate AND2, AND a second gate driving circuit GD 2;
an inverting input terminal of the third voltage comparator CP3 and a non-inverting input terminal of the fourth voltage comparator CP4 are connected as an input terminal of the second voltage comparison module, and are connected to an output terminal of the drain current detection circuit 32;
the non-inverting input terminal of the third voltage comparator CP3 is connected to a third reference voltage Vref3An inverting input terminal of the fourth voltage comparator CP4 is connected to a fourth reference voltage Vref4Connecting;
an output end of the third voltage comparator CP3 is connected to a first input end of the second AND gate AND2, AND an output end of the fourth voltage comparator CP4 is connected to a second input end of the second AND gate AND 2;
an output end of the second AND gate AND2 is connected to an input end of the second gate driving circuit GD2, AND two output ends of the second gate driving circuit GD2 are used as two output ends of the second voltage comparing module AND are respectively connected to a gate AND a source of the second auxiliary MOSFET M2.
Referring to fig. 1 to 5, in the embodiment of the present invention, the load current is IL(ii) a The third setting value is k3*IL(ii) a The fourth setting value is k4*IL；
When the drain current IdDown to a third set value k3*ILWhen the second auxiliary MOSFET M2 is turned on, part of the gate current IgCharging the second capacitor C2, shunting the gate current I via a second resistor R2 in parallel with the second capacitor C2gThe drain current reduction speed is increased, and the turn-off loss is reduced; when the drain current IdDown to the set value k4*ILWhen the second auxiliary MOSFET M2 is turned off, the gate currentAnd reducing the reduction speed of the drain current and reducing the oscillation of the turn-off current.
Referring to fig. 1 to 4, as a preferred embodiment of the present embodiment, the drain-source voltage detection circuit 22 includes: a third resistor R3, a fourth resistor R4 and a first operational amplifier U1;
one end of the third resistor R3 is connected to the drain of the silicon carbide MOSFET M0 as an input end of the drain-source voltage detection circuit 22, and the other end of the third resistor R3 is connected to one end of the fourth resistor R4 and the non-inverting input end of the first operational amplifier U1;
the other end of the fourth resistor R4 is used as the other input end of the drain-source voltage detection circuit 22 and is connected with the source of the silicon carbide MOSFET M0;
the inverting input terminal of the first operational amplifier U1 is connected to its output terminal as the output terminal of the drain-source voltage detection circuit 22.
Referring to fig. 1 to 5, as a preferred embodiment, the drain current detection circuit 32 includes: current detecting resistor RshuntA fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8 and a second operational amplifier U2;
the current detecting resistor RshuntIs connected to the source of the silicon carbide MOSFET M0 and to one end of the fifth resistor R5; the current detecting resistor RshuntThe other end of the resistor is connected with one end of the seventh resistor R7;
the other end of the fifth resistor R5 is connected with one end of the sixth resistor R6 and the non-inverting input end of the second operational amplifier U2, and the other end of the sixth resistor R6 is grounded;
the other end of the seventh resistor R7 is connected to one end of the eighth resistor R8 and the inverting input terminal of the second operational amplifier U2, and the other end of the eighth resistor R8 is connected to the output terminal of the second operational amplifier U2 as the output terminal of the drain current detection circuit 32.
Referring to fig. 1 to 5, as an alternative embodiment of the present embodiment, the first arithmetic unit U1 may be a THS4211D high-speed operational amplifier havingThe gain bandwidth product of 1GHz is obtained, and the advantages of high bandwidth, low distortion and the like are achieved. Current detecting resistor RshuntThe sampling resistor with high precision, small parasitic inductance and low temperature drift can be adopted. The second operational amplifier U2 may employ an ultra low noise high bandwidth voltage feedback amplifier.
In this example, k1,k2The value of (A) needs to be satisfied
10k1<k2<1, wherein Vds(on)Is the turn-on voltage drop of the silicon carbide MOSFET M0; k is a radical of3,k4The value of (a) needs to satisfy 0<k4<k3<1；
Vref1＝(R4/(R3+R4))*k1*VDC；
Vref2＝(R4/(R3+R4))*k2*VDC；
Vref3＝(R8/R7)*Rshunt*IL*k3；
Vref4＝(R8/R7)*Rshunt*IL*k4。
Referring to fig. 1 to 6, based on the above solution of the present embodiment, the shutdown process of silicon carbide can be divided into 8 stages, and the operation principle of each stage is described as follows:
(1)t1-t2stage (2): off delay phase, t1At that time, the output voltage of the PWM drive circuit 11 is changed from the high level VCCGate-source voltage V of transition to 0, silicon carbide MOSFET M0gsGradually decreases.
(2)t2-t3Stage (2): a first stage of a rising section of a drain-source voltage, a drain-source voltage VdsGradually rising, gate-source voltage VgsMaintained at the Miller plateau voltage VMiLLerInvariable, t3Time of day, drain-source voltage VdsRises to a set value k1*VDC。
(3)t3-t4Stage (2): second stage of rising segment of drain-source voltage, t3Time of day, drain-source voltage VdsRise toSet value k1*VDCPartial gate current I of the first auxiliary MOSFET M1, silicon carbide MOSFET M0gCharging capacitor C1 with charging current IC1The gate current I is shunted via a resistor R1 connected in parallel with a capacitor C1gIncrease, increase voltage change rate, accelerate voltage rise speed, reduce turn-off loss, t4Time of day, drain-source voltage VdsRises to a set value k2*VDCThe first auxiliary MOSFET M1 is turned off and the gate current IgAnd decreases.
(4)t4-t5Stage (2): third stage of rising segment of drain-source voltage, t4Time of day, drain-source voltage VdsRises to a set value k2*VDCFirst auxiliary MOSFET M1, gate current IgReduced, after which the silicon carbide MOSFET M0 continues to turn off at a slower rate, t5Time drain-source voltage VdsUp to bus voltage VDCDue to the parasitic inductance, voltage spikes in the drain-source voltage occur.
(5)t5-t6Stage (2): first stage of the falling section of the drain current, drain current IdFrom the load current ILStarting to gradually decrease, the gate-source voltage VgsGradually decrease, t6Time of day, drain current IdDown to the set value k3*IL。
(6)t6-t7Stage (2): a second phase of the drain current falling segment. Drain current IdGradually decreasing, gate-source voltage VgsGradually decreasing; t is t6Time of day, drain current IdDown to the set value k3*ILWith the second auxiliary MOSFET M2 turned on, the partial gate current I of the silicon carbide MOSFET M0gCharging capacitor C2 with charging current IC2The gate current I is shunted via a resistor R2 connected in parallel with a capacitor C2gAnd increasing, accelerating the current reduction speed and reducing the turn-off loss. t is t7Time of day, drain current IdDown to the set value k4*ILThe second auxiliary MOSFET M2 turns off, the gate current decreases, the current drop speed decreases, and the off current oscillation decreases.
(7)t7-t8Stage (2): a third stage of the drain current falling stage. t is t7At this time, the second auxiliary MOSFET M2 turns off and the gate current decreases. Drain current IdContinues to fall, t8Time of day, drain current IdAnd drops to 0.
(8)t8-t9Stage (2): a gate-source voltage falling phase. The gate-source voltage of silicon carbide MOSFET M0 continues to drop at this stage. t is t9At that time, the gate-source voltage of silicon carbide MOSFET M0 continues to drop to the turn-off negative voltage-VEE。
In summary, the embodiment of the present invention controls the gate current of the silicon carbide MOSFET M0 by turning on and off the voltage change rate control circuit 21 and the current change rate control circuit 31, so as to control the turn-off speed, and reduce the voltage overshoot while achieving a high turn-off speed and a low turn-off loss. The embodiment of the invention adopts the conventional resistance type driving in the overshoot section (peak section) of the silicon carbide MOSFET M0, the turn-off speed is lower, and the turn-off voltage overshoot is not increased. Through experiments, the driving resistor R is driven at 300V, 30A and 20 ohmsgUnder the condition, in the ltsspice software, taking a silicon carbide MOSFET M0 of C3M0021120K of CREE company as an example, a conventional driving circuit and the proposed driving circuit are simulated, and the off-voltage current waveforms of the two are shown in fig. 7, 8 and 9. The turn-off voltage overshoot of the conventional drive circuit is 2.7V and the turn-off loss is 278.771 uJ. The turn-off voltage overshoot of the driving circuit proposed by the embodiment of the present invention is 2.67V, and the turn-off loss is only 130.704 uJ. Under the same condition, compared with the traditional drive circuit, the turn-off voltage overshoot of the silicon carbide MOSFET M0 under the drive of the drive circuit provided by the invention is reduced by 1.1%, and the turn-off loss is reduced by 53.1%.
The silicon carbide MOSFET driving circuit can remarkably improve the turn-off speed of the silicon carbide MOSFET M0, reduce the turn-off loss of the silicon carbide MOSFET M0, reduce the overshoot of the drain-source voltage in the turn-off process and improve the efficiency and reliability of the silicon carbide MOSFET M0.
Example two:
referring to fig. 1, 2, 3, and 10, the present embodiment provides a control method of a silicon carbide MOSFET driving circuit, including:
based on the received PWM signal, sending a driving signal to a silicon carbide MOSFET M0 to control the on-off of the silicon carbide MOSFET M0; further comprising:
changing the on-off state of the voltage change rate control circuit 21 based on a change in the drain-source voltage of the silicon carbide MOSFET M0 to change the drain-source voltage change rate of the silicon carbide MOSFET M0; and/or
On the basis of a change in the drain current of the silicon carbide MOSFET M0, the on-off state of the current change rate control circuit 31 is changed to change the drain current change rate of the silicon carbide MOSFET M0.
In a preferred embodiment, the changing the on-off state of the voltage change rate control circuit 21 based on the change of the drain-source voltage of the silicon carbide MOSFET M0 to change the drain-source voltage change rate of the silicon carbide MOSFET M0 includes:
when the drain-source voltage rises to a first set value, the voltage change rate control circuit 21 turns on to increase the drain-source voltage change rate of the silicon carbide MOSFET M0;
when the drain-source voltage rises to a second set value, the voltage rate of change control circuit 21 is turned off to decrease the rate of change of the drain-source voltage of the silicon carbide MOSFET M0.
In a preferred embodiment, the changing the on/off state of the current change rate control circuit 31 based on the change in the drain current of the silicon carbide MOSFET M0 to change the drain current change rate of the silicon carbide MOSFET M0 includes:
when the drain current drops to a third set value, the current change rate control circuit 31 is turned on to increase the drain current change rate;
when the drain current decreases to a fourth set value, the current change rate control circuit 31 is turned off to decrease the drain current change rate.
The principle and function of the present embodiment are substantially the same as those of the first embodiment, and the description of the present embodiment will not be repeated.
The present invention is exemplified by a silicon carbide MOSFET, but the application of the principle is not limited to the silicon carbide MOSFET, and the present invention can be applied to other power semiconductor devices.
It should be understood that portions of the present invention may be implemented in hardware, software, firmware, or a combination thereof. In the above embodiments, the various steps or methods may be implemented in software or firmware stored in memory and executed by a suitable instruction execution system. All or part of the steps of the method of the above embodiments may be implemented by hardware that is configured to be instructed to perform the relevant steps by a program, which may be stored in a computer-readable storage medium, and which, when executed, includes one or a combination of the steps of the method embodiments.
Any process or method descriptions in flow charts or otherwise described herein may be understood as representing modules, segments, or portions of code which include one or more executable instructions for implementing specific logical functions or steps in the process. And the scope of the preferred embodiments of the present invention includes additional implementations in which functions may be executed out of order from that shown or discussed, including substantially concurrently or in reverse order, depending on the functionality involved.
The logic and/or steps represented in the flowcharts or otherwise described herein, e.g., as a sequential list of executable instructions that may be thought of as being useful for implementing logical functions, may be embodied in any computer-readable medium for use by or in connection with an instruction execution system, apparatus, or device, such as a computer-based system, processor-containing system, or other system that can fetch the instructions from the instruction execution system, apparatus, or device and execute the instructions.
The terms "first", "second" … … "N" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first", "second" … … "nth" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the description of the present invention, it should be noted that the terms "connected" and "connected" are to be interpreted broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected, unless explicitly stated or limited otherwise; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
It will be understood by those skilled in the art that the foregoing embodiments are merely for clarity of description and are not intended to limit the scope of the invention. It will be apparent to those skilled in the art that other variations or modifications may be made on the above invention and still be within the scope of the invention.
Claims (10)
1. A silicon carbide MOSFET driver circuit having improved turn-off characteristics, comprising:
the PWM driving module is used for sending a driving signal to the silicon carbide MOSFET based on the received PWM signal so as to control the on-off of the silicon carbide MOSFET; further comprising:
the voltage change rate control module comprises a voltage change rate control circuit, and the on-off state of the voltage change rate control circuit is changed based on the change of the drain-source voltage of the silicon carbide MOSFET so as to change the drain-source voltage change rate of the silicon carbide MOSFET; and/or
And the current change rate control module comprises a current change rate control circuit, and the on-off state of the current change rate control circuit is changed based on the change of the drain current of the silicon carbide MOSFET so as to change the drain current change rate of the silicon carbide MOSFET.
2. The silicon carbide MOSFET driver circuit of claim 1, wherein changing the on-off state of the voltage change rate control circuit to change the rate of change of the drain-source voltage of the silicon carbide MOSFET based on the change in the drain-source voltage of the silicon carbide MOSFET comprises:
when the drain-source voltage rises to a first set value, the voltage change rate control circuit is switched on to increase the drain-source voltage change rate of the silicon carbide MOSFET;
and when the drain-source voltage rises to a second set value, the voltage change rate control circuit is switched off so as to reduce the drain-source voltage change rate of the silicon carbide MOSFET.
3. The silicon carbide MOSFET driver circuit of claim 1, wherein changing the on-off state of the current rate of change control circuit to change the rate of change of the drain current of the silicon carbide MOSFET based on a change in the drain current of the silicon carbide MOSFET comprises:
when the drain current drops to a third set value, the current change rate control circuit is switched on to increase the drain current change rate;
when the drain current drops to a fourth set value, the current change rate control circuit is switched off to reduce the drain current change rate.
4. The silicon carbide MOSFET driver circuit of claim 1, wherein the voltage change rate control module further comprises a drain-source voltage detector circuit having two inputs connected to the drain and the source of the silicon carbide MOSFET, respectively, an output connected to the input of the voltage change rate control circuit, and an output connected to the gate of the silicon carbide MOSFET.
5. The silicon carbide MOSFET driver circuit of claim 1, wherein the current rate of change control module further comprises a drain current sense circuit having an input coupled to the drain of the silicon carbide MOSFET and an output coupled to an input of the current rate of change control circuit, and an output coupled to the gate of the silicon carbide MOSFET.
6. The silicon carbide MOSFET driver circuit of claim 1, wherein the voltage rate of change control circuit comprises: the first voltage comparison module, the first auxiliary MOSFET and the first RC parallel circuit;
the input end of the first voltage comparison module is connected with the output end of the drain-source voltage detection circuit, and the two output ends of the first voltage comparison module are respectively connected with the grid and the source of the first auxiliary MOSFET;
the first RC parallel circuit comprises a first resistor and a first capacitor which are connected in parallel; one end of the first RC parallel circuit is grounded, and the other end of the first RC parallel circuit is connected with the source electrode of the first auxiliary MOSFET;
the drain electrode of the first auxiliary MOSFET is connected with the grid electrode of the silicon carbide MOSFET.
7. The silicon carbide MOSFET driver circuit of claim 1, wherein the current rate of change control circuit comprises:
the second voltage comparison module, the second auxiliary MOSFET and the second RC parallel circuit; the input end of the second voltage comparison module is connected with the output end of the drain current detection circuit, and the two output ends of the second voltage comparison module are respectively connected with the grid electrode and the source electrode of the second auxiliary MOSFET;
the second RC parallel circuit comprises a second resistor and a second capacitor which are connected in parallel; one section of the second RC parallel circuit is grounded, and the other end of the second RC parallel circuit is connected with the source electrode of the second auxiliary MOSFET;
and the drain electrode of the second auxiliary MOSFET is connected with the grid electrode of the silicon carbide MOSFET.
8. A method of controlling a silicon carbide MOSFET driver circuit, comprising:
based on the received PWM signal, sending a driving signal to the silicon carbide MOSFET so as to control the on-off of the silicon carbide MOSFET; further comprising:
changing the on-off state of the voltage change rate control circuit based on the change of the drain-source voltage of the silicon carbide MOSFET so as to change the drain-source voltage change rate of the silicon carbide MOSFET; and/or
And changing the on-off state of the current change rate control circuit based on the change of the drain current of the silicon carbide MOSFET so as to change the drain current change rate of the silicon carbide MOSFET.
9. The method of claim 8, wherein changing the on-off state of the voltage change rate control circuit to change the rate of change of the drain-source voltage of the silicon carbide MOSFET based on a change in the drain-source voltage of the silicon carbide MOSFET comprises:
when the drain-source voltage rises to a first set value, the voltage change rate control circuit is switched on to increase the drain-source voltage change rate of the silicon carbide MOSFET;
and when the drain-source voltage rises to a second set value, the voltage change rate control circuit is switched off so as to reduce the drain-source voltage change rate of the silicon carbide MOSFET.
10. The method of claim 8, wherein changing the on-off state of the current rate of change control circuit based on a change in the drain current of the silicon carbide MOSFET to change the rate of change of the drain current of the silicon carbide MOSFET comprises:
when the drain current drops to a third set value, the current change rate control circuit is switched on to increase the drain current change rate;
when the drain current drops to a fourth set value, the current change rate control circuit is switched off to reduce the drain current change rate.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114978137A (en) * | 2022-05-05 | 2022-08-30 | 北京市科通电子继电器总厂有限公司 | Drive control circuit, system and integrated circuit of power switch device |
| CN115664398A (en) * | 2022-11-18 | 2023-01-31 | 瀚昕微电子(无锡)有限公司 | Overcurrent protection system and method of silicon carbide driver, driver and driving system |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110133790A1 (en) * | 2009-12-07 | 2011-06-09 | Denso Corporation | Device for driving switching elements |
| CN103795385A (en) * | 2014-02-24 | 2014-05-14 | 南京航空航天大学 | Power tube drive method and circuit, and direct-current solid power controller |
| CN108847835A (en) * | 2018-06-27 | 2018-11-20 | 深圳市汇北川电子技术有限公司 | A kind of power device Drive Protecting Circuit and its control method |
| CN110112893A (en) * | 2019-05-24 | 2019-08-09 | 华中科技大学 | A kind of driving circuit of manufacturing silicon carbide semiconductor field-effect tube |
| CN110190838A (en) * | 2018-12-05 | 2019-08-30 | 徐州中矿大传动与自动化有限公司 | A kind of SiC MOSFET short-circuit protection circuit and method based on short circuit current inhibition |
| CN110401331A (en) * | 2019-07-30 | 2019-11-01 | 湖南大学 | A kind of SiC power device initiative driving circuit of electric vehicle motor controller |
| CN110838787A (en) * | 2019-11-15 | 2020-02-25 | 湖南大学 | SiC MOSFET active driving circuit for improving driving performance |
| CN111211762A (en) * | 2020-02-19 | 2020-05-29 | 湖南大学 | SiC MOSFET drive circuit with high turn-on performance |
| CN111327302A (en) * | 2020-02-17 | 2020-06-23 | 南京工程学院 | SiC MOSFET active drive circuit |
-
2021
- 2021-03-15 CN CN202110276852.3A patent/CN113067571A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110133790A1 (en) * | 2009-12-07 | 2011-06-09 | Denso Corporation | Device for driving switching elements |
| CN103795385A (en) * | 2014-02-24 | 2014-05-14 | 南京航空航天大学 | Power tube drive method and circuit, and direct-current solid power controller |
| CN108847835A (en) * | 2018-06-27 | 2018-11-20 | 深圳市汇北川电子技术有限公司 | A kind of power device Drive Protecting Circuit and its control method |
| CN110190838A (en) * | 2018-12-05 | 2019-08-30 | 徐州中矿大传动与自动化有限公司 | A kind of SiC MOSFET short-circuit protection circuit and method based on short circuit current inhibition |
| CN110112893A (en) * | 2019-05-24 | 2019-08-09 | 华中科技大学 | A kind of driving circuit of manufacturing silicon carbide semiconductor field-effect tube |
| CN110401331A (en) * | 2019-07-30 | 2019-11-01 | 湖南大学 | A kind of SiC power device initiative driving circuit of electric vehicle motor controller |
| CN110838787A (en) * | 2019-11-15 | 2020-02-25 | 湖南大学 | SiC MOSFET active driving circuit for improving driving performance |
| CN111327302A (en) * | 2020-02-17 | 2020-06-23 | 南京工程学院 | SiC MOSFET active drive circuit |
| CN111211762A (en) * | 2020-02-19 | 2020-05-29 | 湖南大学 | SiC MOSFET drive circuit with high turn-on performance |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114978137A (en) * | 2022-05-05 | 2022-08-30 | 北京市科通电子继电器总厂有限公司 | Drive control circuit, system and integrated circuit of power switch device |
| CN115664398A (en) * | 2022-11-18 | 2023-01-31 | 瀚昕微电子(无锡)有限公司 | Overcurrent protection system and method of silicon carbide driver, driver and driving system |
| CN115664398B (en) * | 2022-11-18 | 2023-04-07 | 瀚昕微电子(无锡)有限公司 | Overcurrent protection system and method of silicon carbide driver, driver and driving system |
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