CN113066745A - Reactive ion etching device and method for continuously preparing large-area nano suede - Google Patents
Reactive ion etching device and method for continuously preparing large-area nano suede Download PDFInfo
- Publication number
- CN113066745A CN113066745A CN202110331324.3A CN202110331324A CN113066745A CN 113066745 A CN113066745 A CN 113066745A CN 202110331324 A CN202110331324 A CN 202110331324A CN 113066745 A CN113066745 A CN 113066745A
- Authority
- CN
- China
- Prior art keywords
- cavity
- silicon wafer
- unloading
- etching
- loading
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 164
- 238000001020 plasma etching Methods 0.000 title claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 103
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 103
- 239000010703 silicon Substances 0.000 claims abstract description 100
- 238000011068 loading method Methods 0.000 claims abstract description 78
- 238000005530 etching Methods 0.000 claims abstract description 74
- 150000002500 ions Chemical class 0.000 claims abstract description 53
- 238000009826 distribution Methods 0.000 claims abstract description 13
- 229910003910 SiCl4 Inorganic materials 0.000 claims abstract description 12
- 230000007246 mechanism Effects 0.000 claims abstract description 12
- 230000005684 electric field Effects 0.000 claims abstract description 9
- 238000004140 cleaning Methods 0.000 claims abstract description 6
- 235000012431 wafers Nutrition 0.000 claims description 92
- 239000007789 gas Substances 0.000 claims description 45
- 230000005540 biological transmission Effects 0.000 claims description 19
- 238000007789 sealing Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 238000005086 pumping Methods 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000002344 surface layer Substances 0.000 claims description 3
- 230000002195 synergetic effect Effects 0.000 abstract description 3
- 238000002310 reflectometry Methods 0.000 description 11
- 239000012495 reaction gas Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 239000002585 base Substances 0.000 description 3
- 239000002086 nanomaterial Substances 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000010924 continuous production Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910021418 black silicon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a reactive ion etching method for continuously preparing a large-area nano suede, which comprises the following steps of S1: cleaning and pretreating a silicon wafer to be subjected to texturing; s2: placing the damaged silicon wafer to a carrier plate of a loading table, and then sequentially passing through a loading cavity and a process buffer cavity to enter a process cavity; s3: opening the vacuum apparatus, SF6、O2And SiCl4Etching gas uniformly enters the process cavity from the linear ion source gas distribution hole; s4: turning on a radio frequency power supply and a magnetic field device, and ionizing etching gas to generate plasma; the high-energy ions vertically shoot to the surface of the sample under the action of an electric field, and are subjected to physical bombardment to complete the etching of the silicon wafer in the process chamber; s5: the silicon wafer sequentially passes through the unloading buffer cavity and the unloading cavity along with the carrier plate from the process cavity, and finally is taken out from the unloading platform. The invention combines a plurality of large-size linear ion sources together to realize large-area uniform etching. The continuous dynamic etching of the silicon wafer can be realized through the synergistic effect of the loading cavity, the unloading cavity and the conveying mechanism, and the RIE capacity is greatly improved.
Description
Technical Field
The invention relates to the technical field of manufacturing of solar nanometer suede, in particular to a reactive ion etching device and a method for continuously preparing large-area nanometer suede.
Background
In the manufacturing process of the crystalline silicon solar cell, in order to reduce the reflectivity of the surface of the silicon wafer and reduce the light loss, texturing processing is often performed on the surface of the silicon wafer, so that a micro-nano-level light trapping structure is formed on the surface of the silicon wafer, which is commonly called as 'texturing'. In the prior art, the RIE texturing process can be used for manufacturing a nanometer-level textured surface (less than 1 um) due to strong anisotropy and high etching selection ratio, so that a textured surface structure with low reflectivity is formed and is used as an important method for texturing the surface of a silicon wafer. However, ions bombard the surface of the silicon wafer under the self-bias effect in the RIE texturing process to cause damage to the surface of the silicon wafer to a certain extent, which causes the actual output efficiency of the solar cell after the RIE texturing to be still low. The magnitude of the self-bias voltage is in direct proportion to the high-frequency radio frequency power, the larger the power is, the higher the ionization rate of the plasma is, the larger the etching rate is, and meanwhile, the larger the damage to the surface of the silicon wafer is, so that the consideration between the etching efficiency and the etching quality is difficult. In addition, the RIE equipment has low capacity, most of processing is still static processing, and large-area and high-efficiency etching cannot be realized.
Chinese patent CN 105133038A discloses a preparation method and application of polysilicon with high-efficiency nano suede structure. The method mainly comprises the steps of (1) etching and texturing by reactive ions; (2) and corroding the surface of the silicon wafer. The reaction gas adopted in the reactive ion etching process is SF6And O2The mixed gas of (1). After reactive ion etching, the reflectivity is reduced to 8.90% from 27.42% of the original silicon wafer, and after damage by alkali liquor treatment, the surface reflectivity is 12.78%.
Chinese patent CN 101478013a discloses a method for preparing silicon wafer textured surface of solar cell by reactive ion etching and a solar cell manufactured by the method. More particularly, to a reactive ion etching gas comprising at least two halogen-containing gases, including in particular Cl, and an oxidizing gas2、CF4、HBr、C2F6、SF6、F2、CHF3And NF3The oxidizing gas comprises O2And O3. The reflectivity of the surface of the silicon wafer obtained by using the reaction gas is 7.8-9.5%.
Chinese patent CN 102534622A discloses a method for forming black silicon by plasma excitation, and provides an automatic conveying device, which comprises a silicon wafer carrier plate, a silicon wafer feeding device and a silicon wafer discharging device.
Chinese patent CN 103972015a discloses a dual-frequency plasma generator under a chain condition, which has a simple structure and can realize continuous production conditions.
Chinese patent CN 104124307a discloses a reactive ion etching process and equipment for a crystalline silicon solar cell, wherein the reactive ion etching equipment comprises a gas system and an electrode plate, and the specific process comprises: putting the textured silicon wafer into etching equipment, and introducing reaction gas and etching gas to etch the silicon wafer; introducing protective gas to react with the side wall of the silicon wafer to form a protective layer, wherein the etching rate of the silicon wafer in the vertical direction of the front textured surface is greater than that of the side wall; wherein the reaction gas is O2The etching gas is SF6The protective gas is C4F8. The depth-to-width ratio of the microstructure is more than or equal to 20 by utilizing the reaction gas and the equipment: 1.
chinese patent CN 102280337A discloses a reactive ion etching device and method, the device comprises a grounded vacuum chamber, the bottom of the vacuum chamber can be provided with 5-8 multi-layer substrate holders, the etching gas supply system comprises Ar and O2，CF4Or Cl2。
Therefore, how to overcome the problems of low productivity and large surface damage caused in the etching process of the existing reactive ion etching technology, further improve the etching productivity and reduce the etching damage, and the provision of the more environment-friendly reactive ion etching device for continuously preparing the large-area nano suede is the technical problem which needs to be solved by technical personnel in the field at present.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: how to overcome the problems of low productivity and large surface damage caused in the etching process of the existing reactive ion etching technology, further improve the etching productivity and reduce the etching damage, and provides a reactive ion etching device for continuously preparing large-area nanometer suede.
In order to achieve the purpose, the invention adopts the technical scheme that: a reactive ion etching device for continuously preparing large-area nanometer suede comprises a loading platform, a loading cavity, a process cavity, an unloading cavity and an unloading platform which are connected in sequence;
the process chamber is used for carrying out reactive ion processing on the silicon wafer to form a nano suede surface, the loading chamber is used for continuously conveying the silicon wafer to the process chamber, the unloading chamber is used for continuously outputting the silicon wafer from the process chamber, the process chamber is communicated with the loading chamber and the unloading chamber, the inlet and the outlet of the process chamber are respectively provided with a sealing gate valve, the bottoms of the loading chamber, the unloading chamber and the process chamber are respectively provided with a vacuum pumping device, the tops of the loading chamber and the unloading chamber are provided with an air inlet device, and the top of the process chamber is provided with an air supply device,
the silicon wafer conveying device is characterized by further comprising a conveying mechanism, wherein the conveying mechanism comprises a plurality of conveying rollers, a base plate and a support plate, the base plate supports the support plate, the conveying rollers are used for driving the support plate to convey along each cavity conveying flow, and the support plate is used for fixing a silicon wafer.
Furthermore, a substrate for transmitting low-frequency energy of the low-frequency radio frequency power supply to the carrier plate is arranged in the process chamber, the substrate comprises an aluminum spring plate, and the substrate is connected to the low-frequency power supply;
the top of the process cavity is provided with a linear ion source, the upper end of the linear ion source is connected with process gas inlet equipment, and the linear ion source is connected with a high-frequency radio frequency power supply and used for distributing etching gas and simultaneously starting to generate plasma.
Furthermore, the linear ion sources are arranged in a plurality of numbers, the linear ion sources are arranged in parallel and combined together, and a synchronizer is installed on the linear ion sources.
Furthermore, the linear ion source is uniformly provided with air distribution holes, and the air distribution holes are arranged along the length direction of the linear ion source.
Furthermore, through grooves are formed in the substrate along the transmission direction at intervals, the through grooves are formed in the edge of the substrate, the transmission roller is arranged in the through grooves, and the transmission of the carrier plate is driven by the rotation of the transmission roller.
Furthermore, a process buffer cavity is arranged between the process cavity and the loading cavity and used for adjusting the conveying speed of the carrier plate entering the process cavity, and an unloading buffer cavity is arranged between the unloading cavity and the process cavity and used for adjusting the conveying speed of the carrier plate outputting the process cavity; the loading cavity, the process cavity and the unloading cavity are communicated, a first baffle is arranged between the loading cavity and the process cavity, and a second baffle is arranged between the process cavity and the unloading cavity.
Furthermore, the carrier plate is placed on the loading platform, a manipulator capable of taking the silicon wafers is arranged on the loading platform, and the silicon wafers are placed on the carrier plate in batches.
A reactive ion etching method for continuously preparing large-area nanometer suede comprises the following specific steps:
s1: cleaning and pretreating the silicon wafer subjected to texturing to obtain a damaged silicon wafer;
s2: placing the damaged silicon wafer on a carrier plate of a loading platform, and enabling the carrier plate to sequentially enter a process cavity through a loading cavity and a process buffer cavity under the driving of a transmission roller;
s3: opening the vacuum-pumping equipment until reaching a preset vacuum value, and introducing SF6、O2And SiCl4Etching gas uniformly enters the process cavity from the linear ion source gas distribution hole, and the pressure of the process cavity is maintained at a preset pressure value;
s4: turning on a radio frequency power supply and a magnetic field device, and generating plasma composed of ions, electrons and free radicals by etching gas under the action of a strong electric field; the F radical reacts chemically with the silicon atom to form a volatile substance SF4Etching the surface layer of the silicon wafer passing through the process cavity at a constant speed, and then forming Si from the etched silicon under the action of oxygenxOyFzThe passivation is accumulated on the surface to form a self-masking film, high-energy ions are vertically shot to the surface of the sample under the environment of an electric field to carry out physical bombardment, and the etching of the silicon wafer in the process chamber is completed;
s5: the silicon wafer sequentially passes through the unloading buffer cavity and the unloading device along with the carrier plate from the process cavity, and finally is taken out from the unloading platform;
s6: and the carrier plate returns to the loading platform along with the carrier plate returning device again, and the steps are repeated to realize continuous etching.
Further, SF in S36And O2Is 1: 2 to 3, SF6And SiCl4Is 1: 0.6 to 0.9.
The silicon wafer according to the present invention may be single crystal silicon or polycrystalline silicon.
The invention has the beneficial effects that: the invention can ensure the rapid and continuous transportation by arranging the conveying mechanism, can realize the continuous and dynamic etching of the silicon wafer by the synergistic action of the loading cavity, the unloading cavity and the conveying mechanism, and greatly improves the RIE capacity.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of a reactive ion etching apparatus for continuously preparing a large-area nano textured surface according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a carrier plate according to an embodiment of the invention;
FIG. 3 is a schematic diagram of a linear ion source according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a reactive ion etching method for continuously preparing a large-area nano textured surface according to an embodiment of the present invention;
FIG. 5 is an SEM image of a nano-textured surface prepared on the basis of polysilicon in example 1 of the present invention;
FIG. 6 is an SEM image of a nano-textured surface prepared on the basis of polysilicon in example 2 of the present invention;
FIG. 7 is an SEM image of a conventional single silicon wafer wet etch;
fig. 8 is an SEM image of a nano-textured surface prepared based on conventional single crystal silicon texturing in example 3 of the present invention.
Reference numerals: 1. a loading table; 2. a loading chamber; 21. an air intake device; 22. Sealing the gate valve; 3. A process buffer chamber; 31. a first baffle plate; 32. a second baffle; 33. a linear ion source; 331. distributing air holes; 36. a magnetic field device; 35. A low frequency radio frequency power supply; 34. a substrate comprising an aluminum dome; 37. a high frequency radio frequency power supply; 38. an air supply device; 39. vacuumizing equipment; 4. a process chamber; 5. unloading the buffer cavity; 6. unloading the chamber; 7. unloading the platform; 8. a carrier plate; 9. a silicon wafer; 10. a conveying mechanism.
Detailed Description
The invention is further described below with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
In the description of the present invention, it should be noted that the orientations or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like are based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; either directly or indirectly through intervening media, or may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art. This embodiment is written in a progressive manner.
The reactive ion etching device for continuously preparing the large-area nano suede shown in the attached figures 1-4 comprises a loading platform 1, a loading cavity 2, a process cavity 4, an unloading cavity 6 and an unloading platform 7 which are connected in sequence; the process chamber 4 is used for carrying out reactive ion processing on the silicon wafer 9 to form a nanometer suede, the loading chamber 2 is used for continuously conveying the silicon wafer 9 to the process chamber 4, the unloading chamber 6 is used for continuously outputting the silicon wafer 9 from the process chamber 4, the process chamber 4 is communicated with the loading chamber 2 and the unloading chamber 6, and the inlet and the outlet of the process chamber 4 are provided with sealing gate valves 22.
An empty carrier plate 8 is placed on the loading platform 1, a manipulator capable of taking the silicon wafers 9 is arranged on the loading platform 1, the silicon wafers 9 are placed on the carrier plate 8 in batches, and naturally, the silicon wafers 9 can also be manually placed on the carrier plate 8.
The silicon wafer conveying device is characterized by further comprising a conveying mechanism 10, wherein the conveying mechanism 10 comprises a plurality of conveying rollers, a substrate and a support plate 8, the substrate provides support for the support plate 8, the support plate 8 is used for fixing the silicon wafer 9, and the conveying rollers are used for driving the support plate 8 to convey along conveying processes of the cavities. The transport mechanism 10 also comprises a return device by means of which the carrier plates 8 are returned from the unloading station 7 to the loading station 1, so that recycling of the carrier plates 8 is achieved.
In order to realize the continuous etching of the silicon wafers 9 from the atmospheric environment to the process chamber 4, the bottom parts of the loading chamber 2, the unloading chamber 6 and the process chamber 4 are all provided with vacuumizing equipment 39, the top parts of the loading chamber 2 and the unloading chamber 6 are provided with air inlet equipment 21, the top part of the process chamber 4 is provided with an air supply device 38, the air inlet equipment 21 is used for filling N2 into the loading chamber 2 and the unloading chamber 6 until the air pressure is consistent with the atmospheric pressure, the vacuumizing equipment 39 is used for vacuumizing the air pressure of the loading chamber 2 and the unloading chamber 6 until the air pressure is consistent with the air pressure of the process chamber 4, and the air supply device 38 is used for supplying etching gas into the process chamber. The loading chamber 2 can provide a vacuum environment and an atmospheric environment, and the silicon wafers 9 can be continuously conveyed from the loading table 1 to the process buffer chamber 3 by continuously switching the two environments. Similarly, the unloading chamber 6 can provide a vacuum environment and an atmospheric environment, and the silicon wafer 9 can be continuously conveyed from the unloading buffer chamber 5 to the unloading station 7 by continuously switching the two environments. The invention can ensure the rapid and continuous transportation by arranging the conveying mechanism 10, and can realize the continuous and dynamic etching of the silicon wafer 9 by the synergistic action of the loading cavity 2, the unloading cavity 6 and the conveying mechanism 10, thereby greatly improving the RIE capacity.
The substrate of each chamber is provided with through grooves at intervals along the transmission direction, the through grooves are arranged at the edge of the substrate, the transmission rollers are arranged in the through grooves, and the rotation of the transmission rollers drives the carrier plate 8 to be conveyed. Specifically, the rotating speed of the transmission rollers of each chamber can be controlled independently, and the rotating speeds of the transmission rollers in the process chamber 4 are consistent, so that the carrier plate 8 of the urban silicon wafer 9 can pass through a plasma source area generated by a linear sample source at a constant speed, the etching uniformity of the silicon wafer 9 is ensured, and the preset texture is obtained. The rotating speeds of the transmission rollers in the process buffer cavity 3 and the unloading buffer cavity 5 can be adjusted according to the conveying condition of the carrier plate 8 in the process cavity 4, if a vacancy exists in the process cavity 4, the rotating speed of the transmission rollers in the process buffer cavity 3 can be properly increased, so that the silicon wafer 9 to be etched enters the process cavity 4 to be etched quickly, and the etching efficiency is improved.
The top of the process chamber 4 is provided with a linear ion source 33, and the upper end of the linear ion source 33 is connected with the process gas inlet device 21 and used for distributing etching gasMeanwhile, the linear ion source 33 is connected with the high-frequency radio-frequency power supply 37 to ionize the etching gas introduced into the process chamber 4 to generate plasma, and in the embodiment, the process vacuumizing device 39 is arranged at the bottom of the process chamber 4 to provide a vacuum environment for the process chamber 4. Wherein, the power of the high frequency RF power supply 37 is 1500W-2000W, and the power of the low frequency RF power supply 35 is 400W-800W. The etching gas is SF6、O2And SiCl4。
In order to realize large-area etching and ensure uniform etching effect, the number of the linear ion sources 33 is set to be a plurality, the linear ion sources 33 are arranged in parallel and combined together, and a synchronizer is installed on the linear ion sources 33 and used for synchronizing the phases of the high-frequency radio-frequency power supplies 37 on the linear ion sources 33. Specifically, the linear ion source 33 is formed by processing an aluminum material with a small strain, in this embodiment, the length of the linear ion source 33 is 2m to 2.1m, and the deformation is less than 0.5 mm.
In order to realize that the etching gas uniformly enters the process chamber 4 in a large area, the linear ion source 33 is uniformly provided with gas distribution holes 331, and the gas distribution holes 331 are arranged along the length direction of the linear ion source 33. The structure that is different from the shower head type structure in the prior art is directly injected into the process cavity 4, so that the gas is uniformly distributed in the process cavity 4, and the etching uniformity is higher. The uniformity of the outflow of the etching gas of the distribution holes can be ensured, the uniformity of the etching amount is controlled within +/-1.5%, and the deviation is controlled within +/-0.5%. In this example, the cloth holes have a diameter of 0.5mm and the hole pitch of 7 mm.
The magnetic field device 36 is fixed at two ends of the linear ion source 33, in this embodiment, the magnetic field device 36 is two permanent magnets fixed at two sides of the linear ion source 33. By introducing the magnetic field into the process chamber 4, electrons can be bound, the ionization rate of etching gas is increased, the self-bias voltage is reduced while the etching rate is improved, and the damage of ion bombardment to the silicon wafer 9 is reduced.
A process buffer cavity 3 is arranged between the process cavity 4 and the loading cavity 2 and is used for adjusting the conveying speed of the carrier plate 8 entering the process cavity 4, and an unloading buffer cavity 5 is arranged between the unloading cavity 6 and the process cavity 4 and is used for adjusting the conveying speed of the carrier plate 8 exiting the process cavity 4.
The loading cavity 2, the process cavity 4 and the unloading cavity 6 are communicated, a first baffle 31 is arranged between the loading cavity 2 and the process cavity 4, a second baffle 32 is arranged between the process cavity 4 and the unloading cavity 6, and the first baffle 31 and the second baffle 32 can prevent plasma from entering the process buffer cavity 3 and the unloading buffer cavity 5.
The conveying direction of the carrier plate 8 sequentially passes through the loading cavity 2, the process buffer cavity 3, the process cavity 4 and the unloading cavity 6, in order to ensure the vacuum requirement and the process environment requirement among the cavities, the cavities are arranged in a sealing mode, a sealing gate valve 22 is arranged among the cavities, and the sealing gate valve 22 is used for sealing a passing opening of the carrier plate 8 among the cavities. In this embodiment, sealing gate valves 22 are provided between the loading stage 1 and the loading chamber 2, between the loading chamber 2 and the process buffer chamber 3, between the unloading buffer chamber 5, and between the unloading chamber 6 and the unloading stage 7, so as to facilitate independent operations in the respective chambers and avoid mutual interference.
The process chamber 4 is also provided with an evaporation device which is connected with an air supply device 38 and is used for the liquid SiCl at normal temperature4Vaporization treatment was performed, and the temperature of the vaporization apparatus was set to 58 ℃.
As shown in fig. 4, the reactive ion etching method for continuously preparing the large-area nano suede comprises the following specific steps: s1: cleaning and pretreating the silicon wafer 9 to be subjected to texturing to obtain the damaged silicon wafer 9; s2: the damaged silicon wafer 9 is placed on a carrier plate 8 of the loading platform 1, and the carrier plate 8 is driven by a transmission roller to sequentially enter a process cavity 4 through a loading cavity 2 and a process buffer cavity 3; s3: opening the vacuum-pumping equipment 39 until the preset vacuum value is 0.1-1 Pa, and introducing SF6、O2And SiCl4Etching gas uniformly enters the process cavity 4 from the air distribution holes 331 of the linear ion source 33, and the air pressure of the process cavity 4 is maintained at 10-30 Pa, S4: turning on the radio frequency power supply and magnetic field device 36, under the action of a strong electric field, the etching gas generates plasma composed of ions, electrons and free radicals; the F radical reacts chemically with the silicon atom to form a volatile substance SF4Etching the surface layer of the silicon wafer 9 passing through the process chamber 4 at a constant speed, and then forming Si from the etched silicon under the action of oxygenxOyFzThe passivation is accumulated on the surface to form a self-masking film, meanwhile, the direction of an electric field near the cathode is vertical to the surface of the cathode, high-energy ions vertically shoot to the surface of the sample under the action of the electric field to carry out physical bombardment, and the etching of the silicon wafer 9 in the process cavity 4 is completed; s5: the silicon wafer 9 sequentially passes through the unloading buffer cavity 5 and the unloading device along with the carrier plate 8 from the process cavity 4, and finally is taken out to the unloading platform 7; s6: and the carrier plate 8 returns to the loading platform 1 along with the carrier plate 8 returning device, and the steps are repeated, so that continuous etching is realized.
It should be noted that, because the direction of the electric field near the cathode is perpendicular to the surface of the cathode, the energetic ions are vertically emitted to the surface of the sample under a certain working pressure, so that the etching rate of the reactive ion etching in the vertical direction is greater than that in the horizontal direction, thereby forming the needle-like or parabolic nanostructure on the surface of the silicon wafer 9. The invention adopts SiCl4Replace the traditional Cl2As etching gas, a nano suede with a parabolic or inverted pyramid structure can be formed, so that the nano structure can be regulated. The production safety is improved, the nano structure obtained by etching is controllable and can be controlled to be 150-400 nm, the reflectivity is reduced to be 3-8%, and the overall photoelectric conversion efficiency of the solar cell is effectively improved. By using SF6The dosage of the nano suede structure directly influences the opening size SF of the nano suede structure6The more SF6The larger the opening of the nano textured structure, thus SF6Plays a major etching role in the etching gas. Adding O to etching gas2Can form an oxide self-mask to block the etching process and prevent the surface from being damaged greatly due to over-etching, SF6And O2Is 1: 2 to 3, SF6And SiCl4Is 1: 0.6 to 0.9. The nanometer textured structure can be controlled to be 150 nm-400 nm, and the nanometer structure well reduces the surface reflectivity of the silicon wafer 9. Wherein, the moving speed of the carrier plate 8 in the process cavity 4 is 0.5 mm/s-5 mm/s.
The continuous production flow comprises the following steps: opening a vacuum pumping device 39 of the process chamber 4, and vacuumizing to 0.1-1 Pa; the gas supply device 38 is opened to introduce SF6、O2And SiCl4Etching the gas, opening the magnetic field device 36 and pressurizing the process chamber 4Opening a sealing gate valve 22 between the loading platform 1 and the loading cavity 2, leading the first batch of silicon wafers 9 to enter the loading cavity 2 along with the carrier plate 8, and closing the sealing gate valve 22 between the loading platform 1 and the loading cavity 2; starting a vacuumizing device 39, and vacuumizing to the pressure value of the process cavity 4; opening a sealing door valve 22 between the loading chamber 2 and the process buffer chamber 3, and allowing the first batch of silicon wafers 9 to enter the process buffer chamber 3 along with the carrier plate 8; closing a sealing gate valve 22 between the loading chamber 2 and the process buffer chamber 3, closing the vacuum equipment, opening the gas inlet equipment 21, and introducing nitrogen to the atmospheric pressure; meanwhile, the first batch of silicon wafers 9 are dynamically etched in the process cavity 4 at a constant speed along with the carrier plate 8, the etching time is about 5-20 min, in the etching process, the second batch or more batches of silicon wafers 9 sequentially enter the process buffer cavity 3 through the loading cavity 2 to carry out continuous etching, the vacuumizing device 39 of the unloading cavity 6 is opened to vacuumize to the pressure of the process cavity 4, and after the first batch of silicon wafers 9 enter the process buffer cavity 3, the sealing gate valve 22 between the process buffer cavity 3 and the unloading cavity 6 is opened; the first batch of silicon wafers 9 enters the unloading cavity 6 from the process buffer cavity 3, and the sealing gate valve 22 between the process buffer cavity 3 and the unloading cavity 6 is closed; opening the air inlet device 21 of the unloading cavity 6, and introducing nitrogen to atmospheric pressure; the sealing gate valve 22 between the unloading chamber 6 and the unloading station 7 is opened, the first batch of silicon wafers 9 to the unloading station 7 are taken away, and the carrier plate 8 returns to the loading station 1 along with the returning means.
Example 1
1. And cleaning and pretreating the silicon wafer subjected to texturing to obtain the damaged silicon wafer.
2. Placing the damaged silicon wafer on a carrier plate of a loading platform, and enabling the carrier plate to sequentially enter a process cavity through a loading cavity and a process buffer cavity under the driving of a transmission roller;
3. opening the vacuum-pumping equipment until the air pressure reaches a preset vacuum value of 1Pa, and introducing SF from the process air inlet equipment6、O2And SiCl4And etching gas with the gas flow rate of 1900sccm, 3000sccm and 1500sccm respectively enters the process chamber from the linear ion source gas distribution holes by opening the magnetic field device, and the pressure of the process chamber is maintained at 24 Pa.
4. And turning on a radio frequency power supply, turning on a magnetic field device, wherein the power of the high frequency power supply is 1950W, the power of the low frequency power supply is 750W, the silicon wafer passes through the process cavity along with the carrier plate at the speed of 10cm/min, and the etching time is 10 minutes.
5. The silicon wafer sequentially passes through the unloading buffer cavity and the unloading cavity along with the carrier plate from the process cavity, and finally is taken out from the unloading platform.
6. And the carrier plate returns to the loading platform along with the carrier plate returning device again, and the steps are repeated to realize continuous etching.
After the reactive ion etching processing of the silicon wafers of the batch is tested, the nanometer suede structure is about 200nm, the reflectivity in the range of 600 nm-900 nm of the wavelength is lower than 4%, and the reflectivity uniformity is smaller than 1.5%.
Example 2
1. Cleaning and pretreating the silicon wafer subjected to texturing to obtain a damaged silicon wafer;
2. the silicon wafer after being damaged is placed on a carrier plate of a loading platform of reactive ion etching equipment, and the reactive ion etching equipment comprises the loading platform, a loading cavity, a process buffer cavity, a process cavity, an unloading buffer cavity, an unloading platform, a base and a conveying system, wherein the process cavity is arranged in the loading platform, and the unloading buffer cavity is arranged in the loading platform. The carrier plate is driven by the transmission roller to sequentially pass through a loading cavity and a process buffer cavity of the reactive ion equipment and enter the process cavity;
3. opening the vacuum-pumping equipment until the preset vacuum value is 0.5Pa, and introducing SF from the process air inlet equipment6、O2And SiCl4Etching gas with the gas flow rate of 1850sccm, 2900sccm and 1650sccm respectively enters the process chamber from the linear ion source gas distribution hole by opening the magnetic field device, and the pressure of the process chamber is maintained at 28 Pa.
4. And (3) turning on a radio frequency power supply, turning on a magnetic field device, wherein the power of the high frequency power supply is 1500W, the power of the low frequency power supply is 650W, the silicon wafer passes through the process cavity along with the carrier plate at the speed of 15cm/min, and the etching time is 15 minutes.
5. The silicon wafer sequentially passes through the unloading buffer cavity and the unloading cavity along with the carrier plate from the process cavity, and finally is taken out from the unloading platform.
6. And the carrier plate returns to the loading platform along with the carrier plate returning device again, and the steps are repeated to realize continuous etching.
After the reactive ion etching processing of the silicon wafers of the batch is tested, the nano suede structure is about 170nm, the reflectivity in the wavelength range of 600 nm-900 nm is lower than 4%, and the reflectivity uniformity is smaller than 1.5%.
Scanning Electron Microscope (SEM) tests were performed, and the results obtained are shown in fig. 5, 6, and 8.
It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (9)
1. A reactive ion etching device for continuously preparing large-area nanometer suede is characterized in that: comprises a loading platform (1), a loading cavity (2), a process cavity (4), an unloading cavity (6) and an unloading platform (7) which are connected in sequence; the process chamber (4) is used for carrying out reactive ion processing on a silicon wafer (9) to form a nano suede, the loading chamber (2) is used for conveying the silicon wafer (9) to the process chamber (4) continuously, the unloading chamber (6) is used for outputting the silicon wafer (9) from the process chamber (4) continuously, the process chamber (4) is communicated with the loading chamber (2) and the unloading chamber (6), the inlet and the outlet of the process chamber (4) are provided with a sealing door valve (22), the bottoms of the loading chamber (2), the unloading chamber (6) and the process chamber (4) are provided with vacuum pumping equipment (39), the tops of the loading chamber (2) and the unloading chamber (6) are provided with air inlet equipment (21), the top of the process chamber (4) is provided with an air feeding device (38), the conveying mechanism (10) is further included, and the conveying mechanism (10) comprises a plurality of conveying rollers, The silicon wafer conveying device comprises a base plate and a support plate (8), wherein the base plate supports the support plate (8), the conveying rollers are used for driving the support plate (8) to convey along conveying flows of all cavities, and the support plate (8) is used for fixing a silicon wafer (9).
2. The reactive ion etching device for continuously preparing large-area nano suede according to claim 1, characterized in that: the process cavity (4) is internally provided with a substrate for transmitting the low-frequency energy of the low-frequency radio frequency power supply (35) to the carrier plate (8), the substrate comprises an aluminum spring plate, and the substrate is connected with the low-frequency power supply; the top of the process cavity (4) is provided with a linear ion source (33), the upper end of the linear ion source (33) is connected with the process gas inlet equipment (21), and the linear ion source (33) is connected with a high-frequency radio-frequency power supply (37) and used for distributing etching gas and simultaneously starting to generate plasma.
3. The reactive ion etching apparatus for continuously preparing large-area nano suede according to claim 2, wherein: the linear ion sources (33) are arranged in a plurality of numbers, the linear ion sources (33) are arranged in parallel and combined together, and synchronizers are installed on the linear ion sources (33).
4. The reactive ion etching apparatus for continuously preparing large-area nano suede according to claim 3, wherein: the linear ion source (33) is uniformly provided with air distribution holes (331), and the air distribution holes (331) are arranged along the length direction of the linear ion source (33).
5. The reactive ion etching device for continuously preparing the large-area nano suede according to any one of claims 2 to 4, wherein: the substrate is provided with through grooves at intervals in the transmission direction, the through grooves are formed in the edge of the substrate, the transmission rollers are arranged in the through grooves, and the transmission rollers rotate to drive the carrier plate (8) to be conveyed.
6. The reactive ion etching device for continuously preparing large-area nano suede according to claim 5, wherein: a process buffer cavity (3) is arranged between the process cavity (4) and the loading cavity (2) and is used for adjusting the conveying speed of the carrier plate (8) entering the process cavity (4), and an unloading buffer cavity (5) is arranged between the unloading cavity (6) and the process cavity (4) and is used for adjusting the conveying speed of the carrier plate (8) outputting the process cavity (4); the loading cavity (2), the process cavity (4) and the unloading cavity (6) are communicated, a first baffle (31) is arranged between the loading cavity (2) and the process cavity (4), and a second baffle (32) is arranged between the process cavity (4) and the unloading cavity (6).
7. The reactive ion etching apparatus for continuously preparing large-area nano suede according to claim 6, wherein: the silicon wafer loading device is characterized in that the support plate (8) is placed on the loading platform (1), a mechanical arm capable of taking the silicon wafers (9) is arranged on the loading platform (1), and the silicon wafers (9) are placed on the support plate (8) in batches.
8. A reactive ion etching method for continuously preparing large-area nanometer suede is characterized by comprising the following specific steps: s1: cleaning and pretreating the silicon wafer (9) to be subjected to texturing to obtain a damaged silicon wafer (9); s2: the silicon wafer (9) after damage removal is placed on a carrier plate (8) of a loading platform (1), and the carrier plate (8) is driven by a transmission roller wheel to enter a process cavity (4) through a loading cavity (2) and a process buffer cavity (3) in sequence; s3: opening the vacuum-pumping equipment until reaching a preset vacuum value, and introducing SF6、O2And SiCl4Etching gas uniformly enters the process chamber (4) from the gas distribution hole (331) of the linear ion source (33) and maintains the pressure of the process chamber (4) at a preset pressure value, S4: turning on a radio frequency power supply and a magnetic field device (36), and generating plasma composed of ions, electrons and free radicals by etching gas under the action of a strong electric field; the F radical reacts chemically with the silicon atom to form a volatile substance SF4Etching the surface layer of the silicon wafer (9) passing through the process cavity (4) at a constant speed, and then forming Si from the etched silicon under the action of oxygenxOyFzThe passivation is accumulated on the surface to form a self-masking film, high-energy ions vertically shoot to the surface of the sample under the environment of an electric field for physical bombardment, and the etching of the silicon wafer (9) in the process cavity (4) is completed; s5: the silicon wafer (9) sequentially passes through the unloading buffer cavity (5) and the unloading device along with the carrier plate (8) from the process cavity (4), and finally is taken out to the unloading platform (7); s6: and the carrier plate (8) returns to the loading platform (1) along with the carrier plate (8) returning device, and the steps are repeated to realize continuous etching.
9. The reactive ion etching method for continuously fabricating large-area nano suede as claimed in claim 8, wherein SF in S36And O2Is 1: 2 to 3, SF6And SiCl4Is 1: 0.6 to 0.9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110331324.3A CN113066745B (en) | 2021-03-26 | 2021-03-26 | Reactive ion etching device and method for continuously preparing large-area nano suede |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110331324.3A CN113066745B (en) | 2021-03-26 | 2021-03-26 | Reactive ion etching device and method for continuously preparing large-area nano suede |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113066745A true CN113066745A (en) | 2021-07-02 |
| CN113066745B CN113066745B (en) | 2022-03-22 |
Family
ID=76564178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110331324.3A Active CN113066745B (en) | 2021-03-26 | 2021-03-26 | Reactive ion etching device and method for continuously preparing large-area nano suede |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113066745B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113684463A (en) * | 2021-08-19 | 2021-11-23 | 北京北方华创真空技术有限公司 | Flat plate continuous PVD equipment and support plate bias voltage leading-in device thereof |
| CN114702246A (en) * | 2022-04-29 | 2022-07-05 | 广东工业大学 | Method and system for processing glass hole based on magnetic field and ultrasonic pulse in cooperation and application |
| TWI819621B (en) * | 2022-05-23 | 2023-10-21 | 友威科技股份有限公司 | Contamination resistant continuous plasma process system |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4889609A (en) * | 1988-09-06 | 1989-12-26 | Ovonic Imaging Systems, Inc. | Continuous dry etching system |
| CN102534622A (en) * | 2012-03-20 | 2012-07-04 | 常州比太科技有限公司 | Method for forming solar dry textured black silicon by plasma excitation |
| CN103972015A (en) * | 2014-05-24 | 2014-08-06 | 常州比太科技有限公司 | Dual-frequency plasma generator under chain-type condition |
| CN204216005U (en) * | 2014-11-27 | 2015-03-18 | 苏州阿特斯阳光电力科技有限公司 | A kind of plasma etch apparatus |
| CN105957925A (en) * | 2016-07-14 | 2016-09-21 | 常州比太科技有限公司 | Chain transmission system |
| CN205863207U (en) * | 2016-07-14 | 2017-01-04 | 常州比太科技有限公司 | A kind of chain type transmission system |
| CN106784169A (en) * | 2017-03-30 | 2017-05-31 | 常州比太科技有限公司 | Dry-wet integrated machine and production line |
| CN206685400U (en) * | 2017-03-30 | 2017-11-28 | 常州比太科技有限公司 | Dry-wet integrated machine and production line |
| CN108063107A (en) * | 2018-01-19 | 2018-05-22 | 常州比太黑硅科技有限公司 | A kind of high yield energy chain type transmission vacuum etching and filming equipment |
| CN109037369A (en) * | 2018-06-25 | 2018-12-18 | 江苏理工学院 | A method of efficiently sunken light flannelette is prepared using reactive ion etching |
| CN109449250A (en) * | 2018-10-22 | 2019-03-08 | 常州比太黑硅科技有限公司 | A kind of safely controllable solar silicon wafers RIE process for etching |
-
2021
- 2021-03-26 CN CN202110331324.3A patent/CN113066745B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4889609A (en) * | 1988-09-06 | 1989-12-26 | Ovonic Imaging Systems, Inc. | Continuous dry etching system |
| CN102534622A (en) * | 2012-03-20 | 2012-07-04 | 常州比太科技有限公司 | Method for forming solar dry textured black silicon by plasma excitation |
| CN103972015A (en) * | 2014-05-24 | 2014-08-06 | 常州比太科技有限公司 | Dual-frequency plasma generator under chain-type condition |
| CN204216005U (en) * | 2014-11-27 | 2015-03-18 | 苏州阿特斯阳光电力科技有限公司 | A kind of plasma etch apparatus |
| CN105957925A (en) * | 2016-07-14 | 2016-09-21 | 常州比太科技有限公司 | Chain transmission system |
| CN205863207U (en) * | 2016-07-14 | 2017-01-04 | 常州比太科技有限公司 | A kind of chain type transmission system |
| CN106784169A (en) * | 2017-03-30 | 2017-05-31 | 常州比太科技有限公司 | Dry-wet integrated machine and production line |
| CN206685400U (en) * | 2017-03-30 | 2017-11-28 | 常州比太科技有限公司 | Dry-wet integrated machine and production line |
| CN108063107A (en) * | 2018-01-19 | 2018-05-22 | 常州比太黑硅科技有限公司 | A kind of high yield energy chain type transmission vacuum etching and filming equipment |
| CN109037369A (en) * | 2018-06-25 | 2018-12-18 | 江苏理工学院 | A method of efficiently sunken light flannelette is prepared using reactive ion etching |
| CN109449250A (en) * | 2018-10-22 | 2019-03-08 | 常州比太黑硅科技有限公司 | A kind of safely controllable solar silicon wafers RIE process for etching |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113684463A (en) * | 2021-08-19 | 2021-11-23 | 北京北方华创真空技术有限公司 | Flat plate continuous PVD equipment and support plate bias voltage leading-in device thereof |
| CN114702246A (en) * | 2022-04-29 | 2022-07-05 | 广东工业大学 | Method and system for processing glass hole based on magnetic field and ultrasonic pulse in cooperation and application |
| TWI819621B (en) * | 2022-05-23 | 2023-10-21 | 友威科技股份有限公司 | Contamination resistant continuous plasma process system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113066745B (en) | 2022-03-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113066745B (en) | Reactive ion etching device and method for continuously preparing large-area nano suede | |
| US11735414B2 (en) | Method of post-deposition treatment for silicon oxide film | |
| US20110124144A1 (en) | Substrate processing system and substrate processing method | |
| JP6103104B2 (en) | Deposition equipment | |
| JP4553891B2 (en) | Semiconductor layer manufacturing method | |
| US8257501B2 (en) | Plasma doping device with gate shutter | |
| US6578515B2 (en) | Film formation apparatus comprising movable gas introduction members | |
| JP2005005280A (en) | Method for passivating semiconductor substrate | |
| JPH08330281A (en) | Vacuum treatment device and removal method of vacuum container inner surface deposit film in the vacuum treatment device | |
| US20120231631A1 (en) | Plasma generating apparatus and plasma etching method using the same | |
| CN113481487A (en) | Solar cell and back surface PECVD method and application thereof | |
| US5304405A (en) | Thin film deposition method and apparatus | |
| KR101373746B1 (en) | Apparatus for Processing Substrate Using Plasma | |
| US8931433B2 (en) | Plasma processing apparatus | |
| JP2012054438A (en) | Surface roughening method of silicon-based substrate, and device | |
| CN213878126U (en) | Thin film deposition system for solar cell | |
| JP3857024B2 (en) | Method for forming microcrystalline silicon thin film | |
| JP2654433B2 (en) | Silicon semiconductor fabrication method | |
| JPH06232429A (en) | Photovoltaic element, and method and equipment for forming same | |
| TWI691614B (en) | Linear pecvd apparatus | |
| CN116536650B (en) | Film growth interface optimization method for film growth optimization | |
| JPS6062113A (en) | Plasma cvd equipment | |
| CN114284377B (en) | Double-sided Si-based AlGaN detector and preparation method thereof | |
| CN116536647A (en) | Film for realizing low-temperature high-quality film growth and deposition method thereof | |
| JP3513503B2 (en) | Surface treatment apparatus, photoelectric conversion element, and method for manufacturing photoelectric conversion element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |