CN113054915A - Temperature compensation bias circuit applied to radio frequency power amplifier - Google Patents
Temperature compensation bias circuit applied to radio frequency power amplifier Download PDFInfo
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- CN113054915A CN113054915A CN202110401561.2A CN202110401561A CN113054915A CN 113054915 A CN113054915 A CN 113054915A CN 202110401561 A CN202110401561 A CN 202110401561A CN 113054915 A CN113054915 A CN 113054915A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
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Abstract
The invention discloses a temperature compensation bias circuit applied to a radio frequency power amplifier, which provides base bias for a power tube in a mode of a first triode and a second triode double driving tube, the first driving tube is in a common-emission working configuration, and direct current negative feedback is carried out to the second driving tube to achieve a temperature compensation effect, so that a ballast resistor biased to the power tube is independent of a temperature compensation negative feedback loop, the influence of the ballast resistor on the bias temperature compensation effect is weakened, the power amplifier is better used for adjusting the linearity of the power amplifier, and the technical problems that the ballast resistor of an active bias circuit of the existing radio frequency power amplifier influences a bias point in a radio frequency working state and influences the temperature compensation effect and the linearity of a power amplifier of the radio frequency amplifier circuit are solved.
Description
Technical Field
The invention relates to the technical field of radio frequency circuits, in particular to a temperature compensation bias circuit applied to a radio frequency power amplifier.
Background
A Power Amplifier (PA) in the communication field is one of the key units in a wireless communication link, and is used to amplify a modulated electrical signal carrying modulation information to a certain Power level, and to excite a rear-end antenna to generate a corresponding electromagnetic wave signal, thereby implementing wireless signal transmission.
In a high-frequency Monolithic Microwave Integrated Circuit (MMIC) for a mobile phone, a Heterojunction Bipolar Transistor (HBT) process is mostly adopted for manufacturing, and because the HBT process has the advantages of single power supply, easy matching, good linearity, high power density and the like, for the current mainstream GaAs HBT process, gallium arsenide has very low thermal conductivity and can be continuously reduced along with the rise of temperature, when a power amplifier works in a large-signal state, considerable power dissipation and more heat accumulation are generated, namely, the self-heating effect. Since the base-emitter junction of a transistor can be equivalently regarded as a PN junction, the electrons in the emitter region are thermally excited due to the rise of temperature, and the total number of drifting electrons is gradually increased along with the rise of temperature. Temperature affects the parameters of the transistor, and the change of the parameters of the transistor causes the static operating point of the transistor to change along with the change of the temperature, so that the solution of the temperature drift of the transistor is always a key problem of the transistor circuit design.
The circuit architecture of the active bias network scheme of the existing radio frequency power amplifier is shown in fig. 1, the bias current of QRF is provided by a current mirror composed of Q1 and Q2, the QRF tube quiescent current required by Q can be obtained by adjusting a current limiting resistor R1, and the Q1 and the Q3 which connect a base electrode and a collector electrode together to be used as a diode can play a role in temperature compensation in cooperation with a ballast resistor R2. In practical application, to concentrate the positions of Q1, Q2, Q3 and radio frequency tube QRF on the layout, under the condition of close temperature, when the temperature rises, the current I of QRF and Q2BEThe voltage will increase, and at the same time, under the influence of the temperature rise, the conduction currents of Q1 and Q3 will also increase under the current mirror structure, the voltage drop across R1 will also increase according to ohm's law, the voltage at the vcom node will decrease, and the I will be further reducedBEThe temperature drift is reduced, and therefore, the effect of suppressing the temperature drift is obtained. However, this solution has the following problems: to achieve optimal temperature compensation, Q1-Q3 and QRF must all operate in the same state and have a consistent temperature environment, and the parameters of the 4 devices should be perfectly matched, which obviously cannot be achieved in practical applications, and only centralized layout can be ensured so that the temperatures of the devices, particularly Q3, and the power die are as consistent as possible to maximally suppress temperature drift.In the method of reducing the vcom point by the current mirror structure, because the transistor parameters are fixed, the compensation of the current mirror connection structure to the QRF temperature is fixed and limited, and the ballast resistor R2 is adjusted to play a role in adjusting the temperature compensation to a certain extent, but the bias point in the radio frequency operating state is also affected by R2, which is reflected in the change of the gain curve and the change of the linearity performance of the power amplifier when a large radio frequency signal is input, and the specific relationship is shown in fig. 2. Therefore, a technical problem to be solved by those skilled in the art is to design a bias circuit so as to reduce the influence of the ballast resistor on the bias point in the radio frequency operating state and to optimize the temperature compensation effect and linearity of the power amplifier of the radio frequency amplifier circuit.
Disclosure of Invention
The invention provides a temperature compensation bias circuit applied to a radio frequency power amplifier, which is used for solving the technical problems that the ballast resistor of the active bias circuit of the existing radio frequency power amplifier influences the bias point under the radio frequency working state and influences the temperature compensation effect and the linearity of the power amplifier of the radio frequency power amplifier.
In view of the above, the present invention provides a temperature compensation bias circuit applied to a radio frequency power amplifier, including: the circuit comprises a first resistor, a second resistor, a first driving tube, a second driving tube, a first triode, a second triode, a third resistor, a power tube, a coupling capacitor and an inductor;
one end of the first resistor is connected with the base electrode of the first driving tube, and the other end of the first resistor is connected with a reference voltage source;
one end of the second resistor and the first resistor share a reference voltage source, and the other end of the second resistor is connected with a collector electrode of the first driving tube;
the collector of the first driving tube is connected with the base of the second driving tube, and the emitter of the first driving tube is connected with the emitter of the second driving tube;
the collector of the second driving tube is connected with a positive voltage source, the emitter is connected with one end of a third resistor, one end of the third resistor is connected with the base of a power tube, the base of the power tube is connected with a coupling capacitor, and the collector is connected with an inductor connected with the positive voltage source;
the base electrode of the second driving tube is also connected with a first triode and a second triode which are connected in series, and the emitting electrode of the second triode is grounded.
Optionally, the method further comprises: a first filter capacitor and a second filter capacitor;
one end of the first filter capacitor and the first resistor are connected to the base electrode of the first driving tube together, and the other end of the first filter capacitor is grounded;
one end of the second filter capacitor is connected with the base electrode of the second driving tube, and the other end of the second filter capacitor is grounded with the first filter capacitor.
Optionally, the capacitance values of the first filter capacitor and the second filter capacitor are adjustable.
Optionally, the inductance is a choke coil.
According to the technical scheme, the embodiment of the invention has the following advantages:
the invention provides a temperature compensation bias circuit applied to a radio frequency power amplifier, which comprises a first resistor, a second resistor, a first driving tube, a second driving tube, a first triode, a second triode, a third resistor, a power tube, a coupling capacitor and an inductor, wherein the first resistor, the second resistor, the first triode, the second triode, the third resistor, the power tube, the coupling capacitor and the inductor are connected in series; one end of the first resistor is connected with the base electrode of the first driving tube, and the other end of the first resistor is connected with a reference voltage source; one end of the second resistor and the first resistor share a reference voltage source, and the other end of the second resistor is connected with a collector electrode of the first driving tube; the collector of the first driving tube is connected with the base of the second driving tube, and the emitter of the first driving tube is connected with the emitter of the second driving tube; the collector of the second driving tube is connected with a positive voltage source, the emitter is connected with one end of a third resistor, one end of the third resistor is connected with the base of a power tube, the base of the power tube is connected with a coupling capacitor, and the collector is connected with an inductor connected with the positive voltage source; the base electrode of the second driving tube is also connected with a first triode and a second triode which are connected in series, and the emitting electrode of the second triode is grounded. The base bias is provided for the power tube in a mode of a first triode and a second triode double driving tube, the first driving tube is in a common-emission working configuration, direct current negative feedback is carried out to the second driving tube to achieve a temperature compensation effect, a ballast resistor biased to the power tube is independent of a temperature compensation negative feedback loop, the influence of the ballast resistor on the bias temperature compensation effect is weakened, the power amplifier is better used for adjusting the linearity of the power amplifier, and the technical problems that the ballast resistor of an active bias circuit of the existing radio frequency power amplifier influences the bias point under the radio frequency working state and influences the temperature compensation effect and the linearity of a power amplifier of the radio frequency amplifier circuit are solved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments described in the present invention, and it is obvious for those skilled in the art to obtain other drawings according to these drawings.
Fig. 1 is a circuit architecture of a mainstream scheme of an active bias network of a conventional radio frequency power amplifier;
FIG. 2 is a graph of the effect of the ballast resistor on the bias point of the circuit of FIG. 1;
fig. 3 is a circuit diagram of a temperature compensated bias circuit applied to an rf power amplifier according to an embodiment of the present invention;
fig. 4 is another circuit structure diagram of the temperature compensation bias circuit applied to the rf power amplifier according to the embodiment of the present invention;
FIG. 5 is a graph comparing the bias temperature compensation effect of the prior art circuit and the circuit of the present invention;
FIG. 6 shows V of the power transistor with or without the first filter capacitor and the second filter capacitorBE0Compare the figures.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
For easy understanding, referring to fig. 2 and 4, the present invention provides an embodiment of a temperature compensation bias circuit applied to a radio frequency power amplifier, including: the driving circuit comprises a first resistor R1, a second resistor R2, a first driving tube Q1, a second driving tube Q2, a first triode Q4, a second triode Q5, a third resistor R3, a power tube Q3, a coupling capacitor C0 and an inductor L;
one end of the first resistor R1 is connected with the base electrode of the first driving tube Q1, and the other end is connected with a reference voltage source Vref;
one end of the second resistor R2 and the first resistor R1 share the reference voltage source Vref, and the other end is connected with the collector of the first driving tube Q1;
the collector of the first driving tube Q1 is connected with the base of the second driving tube Q2, and the emitter is connected with the emitter of the second driving tube Q2;
the collector of the second driving tube Q2 is connected with a positive voltage source Vcc, the emitter is connected with one end of a third resistor R3, one end of the third resistor R3 is connected with the base of a power tube Q3, the base of the power tube Q3 is connected with a coupling capacitor C0, and the collector is connected with an inductor L connected with the positive voltage source Vcc;
the base electrode of the second driving tube Q2 is also connected with a first triode Q4 and a second triode Q5 which are connected in series, and the emitting electrode of the second triode Q5 is grounded.
The inductor L may be selected as a choke coil to isolate the rf signal from Vcc and pass only dc current. The coupling capacitor C0 couples the input RF signal to the DC bias and the base of the input RF power tube Q3. The base bias current of the power tube Q3 is provided by a first driving tube Q1 and a second driving tube Q2, i.e. IB3＝IE1+IE2The current passes through a third resistor R3 on the path, the third resistor R3 is a ballast resistor, and the first resistor R1 is a base current-limiting resistor of the first driving tube Q1, so that the static operating point of the Q1 is adjusted. The collector resistance of the first driving transistor Q1, i.e., the second resistor R2, the first transistor Q4, and the second transistor Q5 determine the static operating point of the second driving transistor Q2. The first triode and the second triode are used for providing bias for the second driving tube Q2 without dividing voltage with the resistor and the second resistor R2, so that the second driving tube Q2 can be ensured to be in a conducting state, and the adjustable range of the second resistor R2 is higher.
For temperature compensation of the quiescent operating point, the base current I of the power transistor Q3 increases as the temperature increasesB3One of the drive transistors that provides the base current increases: first of allCurrent I of drive tube Q1E1Also, for the first drive tube Q1: i isE1＝IC1+IB1Due to IB1Is much less than IC1Therefore I isC1Will also increase. And the collector potential V of the first driving tube Q1C1＝Vref-IC1*R1I.e. IC1Increase of VC1Will decrease so as the temperature increases, VC1That is, the voltage of the second driving tube Q2 is decreased, so as to decrease the emitter current I of the second driving tube Q2 when the temperature is increasedE2Therefore, the base bias current I of the power tube Q3B3Will be reduced and the temperature rise I is inhibitedB3The temperature compensation function is realized. By adjusting the value of the second resistor R2, the temperature compensation effect of the offset can be further adjusted. Comparing the bias temperature compensation effect of the existing bias scheme and the bias temperature compensation effect of the scheme of the present invention, the simulation result pair using the ADS simulation is shown in fig. 5, and it can be obtained from fig. 5 that the power tube Q3 operates at the same normal temperature static operating current ICCBy way of comparison, the scheme of the invention is at-35 ℃ to 85 ℃ ICCThe fluctuations were between 88mA and 99mA, significantly better than the temperature drift curve of the prior biasing scheme (thin line in fig. 5). Therefore, the invention achieves the purposes that the temperature compensation of the bias circuit can be specifically adjusted according to the static working current of the power tube, and the function of the ballast resistor is independent of the temperature compensation, so that the ballast resistor is additionally used for adjusting the gain curve of the radio frequency power amplifier, thereby achieving the purpose of adjusting the bias and optimizing the temperature compensation effect and the linearity of the power amplifier.
The embodiment of the invention provides a temperature compensation bias circuit applied to a radio frequency power amplifier, wherein a first driving tube Q1 and a second driving tube Q2 are used as double driving tubes to provide base bias for a power tube Q3, the first driving tube is in a common-emitter working configuration, direct current negative feedback is carried out on the second driving tube to achieve a temperature compensation effect, a ballast resistor R3 biased to the power tube Q3 is independent of a temperature compensation negative feedback loop, the influence of the ballast resistor R3 on the bias temperature compensation effect is weakened, the power amplifier is better used for adjusting the linearity of the power amplifier, and the technical problems that the ballast resistor of an active bias circuit of the existing radio frequency power amplifier influences a bias point under the radio frequency working state and influences the temperature compensation effect and the linearity of a power amplifier of the radio frequency power amplifier circuit are solved.
In one embodiment, the temperature compensation bias circuit applied to the rf power amplifier provided by the present invention may further include: a first filter capacitor C1 and a second filter capacitor C2 for optimizing radio frequency characteristics of the bias;
one end of a first filter capacitor C1 and a first resistor R1 are connected to the base electrode of the first driving tube Q1 together, and the other end of the first filter capacitor C1 is grounded;
one end of the second filter capacitor C2 is connected to the base of the second driving transistor Q2, and the other end is connected to the common ground of the first filter capacitor C1.
The third resistor R3 can adjust the base current of the power transistor Q3 of the power amplifier under the input of the large radio frequency power, and can adjust the magnitude of the bias direct current component under the radio frequency signal, so as to play a role in adjusting the gain curve of the radio frequency power amplifier, and the effect is similar to that of fig. 2. The third resistor R3 can play a role in adjusting the radio frequency gain of the power tube Q3 without participating in the temperature compensation loop, and the temperature compensation performance of the scheme is hardly influenced. When the input radio frequency power is too high, the swing amplitude exceeds a static bias point, the conduction angle is reduced, so that the power amplifier gain is reduced under the condition of large signal input, and the gain compression occurs. The addition of the first filter capacitor C1 and the second filter capacitor C2 enables more radio frequency components leaked to bias, and V is obtained by reducing the voltage drop of the base electrode potentials of the first driving tube Q1 and the second driving tube Q2 in a stable radio frequency stateBE0The quiescent bias point of the lower power transistor Q3 at which the signal input is increased will be increased, delaying gain compression. V of power tube Q3 under the condition of radio frequency input without first filter capacitor C1 and second filter capacitor C2BE0As shown in fig. 6. Meanwhile, by adjusting the size ratio of the first filter capacitor C1 to the second filter capacitor C2, the flatness of the whole gain curve along with the increase of the input power can be further adjusted, and the linearity level of the power amplifier is optimized.
In summary, the temperature compensation bias circuit applied to the rf power amplifier provided by the present invention has the following advantages:
the method adopts a double-driving tube mode to replace the original current mirror single-driving tube to provide a base electrode biasing structure for the power tube, the first driving tube is in a common-emission working configuration, and direct current negative feedback is carried out to the second driving tube to achieve the temperature compensation effect;
the ballast resistor biased to the power tube is independent of the temperature compensation feedback loop, so that the influence of the ballast resistor on the bias temperature compensation effect is weakened, and the ballast resistor is better used for adjusting the linearity of the power amplifier;
the base electrode of the dual-drive tube is connected with the filter capacitor to the ground, so that the gain compression of the power amplifier under the condition of large signal input is improved.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (4)
1. A temperature compensated bias circuit for use in a radio frequency power amplifier, comprising: the circuit comprises a first resistor, a second resistor, a first driving tube, a second driving tube, a first triode, a second triode, a third resistor, a power tube, a coupling capacitor and an inductor;
one end of the first resistor is connected with the base electrode of the first driving tube, and the other end of the first resistor is connected with a reference voltage source;
one end of the second resistor and the first resistor share a reference voltage source, and the other end of the second resistor is connected with a collector electrode of the first driving tube;
the collector of the first driving tube is connected with the base of the second driving tube, and the emitter of the first driving tube is connected with the emitter of the second driving tube;
the collector of the second driving tube is connected with a positive voltage source, the emitter is connected with one end of a third resistor, one end of the third resistor is connected with the base of a power tube, the base of the power tube is connected with a coupling capacitor, and the collector is connected with an inductor connected with the positive voltage source;
the base electrode of the second driving tube is also connected with a first triode and a second triode which are connected in series, and the emitting electrode of the second triode is grounded.
2. The temperature-compensated bias circuit for use in a radio frequency power amplifier of claim 1, further comprising: a first filter capacitor and a second filter capacitor;
one end of the first filter capacitor and the first resistor are connected to the base electrode of the first driving tube together, and the other end of the first filter capacitor is grounded;
one end of the second filter capacitor is connected with the base electrode of the second driving tube, and the other end of the second filter capacitor is grounded with the first filter capacitor.
3. The temperature-compensated bias circuit applied to an rf power amplifier of claim 2, wherein the capacitance of the first filter capacitor and the capacitance of the second filter capacitor are adjustable.
4. The temperature-compensated bias circuit for use in a radio frequency power amplifier of claim 1, wherein the inductor is a choke coil.
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| CN113489461A (en) * | 2021-07-28 | 2021-10-08 | 电子科技大学 | Radio frequency predistortion linearizer and radio frequency power amplifier |
| CN114142818A (en) * | 2021-10-14 | 2022-03-04 | 深圳飞骧科技股份有限公司 | Radio frequency power amplifier applied to 5G-Sub6G frequency band communication system |
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