CN113053715A - Lower electrode assembly, plasma processing device and working method thereof - Google Patents
Lower electrode assembly, plasma processing device and working method thereof Download PDFInfo
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- CN113053715A CN113053715A CN201911381446.2A CN201911381446A CN113053715A CN 113053715 A CN113053715 A CN 113053715A CN 201911381446 A CN201911381446 A CN 201911381446A CN 113053715 A CN113053715 A CN 113053715A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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Abstract
A lower electrode assembly, a plasma processing apparatus and a method of operating the same, wherein the lower electrode assembly includes: the cooling device comprises a base, a cooling device and a control device, wherein the base is provided with a preset working temperature and a cooling channel, and the cooling channel comprises a cooling input end and a cooling output end; a cooling gas having a liquefaction temperature lower than the preset working temperature; the cooling device is used for cooling the cooling gas; a first gas delivery conduit for delivering cooling gas to the cooling device; the second gas conveying pipeline is communicated with the cooling input end and used for conveying the cooled cooling gas into the cooling channel, and the cooled cooling gas cools the base to reach a preset working temperature; and the third gas conveying pipeline is communicated with the cooling output end and is used for outputting the cooling gas after the temperature of the base is reduced. Utilize when electrode subassembly cools down the base, be favorable to reducing cooling gas and cause the damage to contact member, improve electrode subassembly's leakproofness down.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a lower electrode assembly, a plasma processing device and a working method of the lower electrode assembly.
Background
The plasma processing apparatus includes: a vacuum reaction chamber; the base is positioned in the vacuum reaction cavity and used for bearing a substrate to be processed. The working principle of the plasma processing device is that reaction gas containing proper etchant source gas is introduced into a vacuum reaction cavity, then radio frequency energy is input into the vacuum reaction cavity to activate the reaction gas so as to excite and maintain plasma, and the plasma is used for processing a substrate to be processed.
Set up cooling channel in the base, be used for carrying the coolant in the cooling channel, the coolant is in transmit the cooling that realizes the base in the cooling channel. However, the conventional plasma processing apparatus reduces the temperature of the susceptor, which is likely to damage the contact member, and thus, the sealing performance of the susceptor is poor.
Disclosure of Invention
The invention aims to provide a lower electrode assembly, a plasma processing device and a working method thereof, which are used for reducing the temperature of a base, reducing the damage of cooling gas to a contact part and improving the sealing property of the lower electrode assembly.
In order to solve the above-mentioned problems, the present invention provides a bottom electrode assembly for a plasma processing apparatus, comprising: a base having a predetermined operating temperature and a cooling channel therein, the cooling channel including a cooling input and a cooling output; a cooling gas having a liquefaction temperature lower than the preset working temperature; the cooling device is used for cooling the cooling gas; a first gas delivery conduit for delivering the cooling gas to a cooling device; the second gas conveying pipeline is communicated with the cooling input end and is used for conveying the cooled cooling gas into the cooling channel, and the cooled cooling gas cools the base to reach the preset working temperature; and the third gas conveying pipeline is communicated with the cooling output end and is used for outputting the cooling gas after the base is cooled.
Optionally, the cooling gas comprises: at least one of nitrogen, helium, methane, or oxygen.
Optionally, the cooling device is a liquid nitrogen device.
Optionally, the method further includes: a first control valve for controlling the flow rate of the cooling gas into the cooling device.
Optionally, the method further includes: and the recovered gas pipeline is communicated with the third gas conveying pipeline and is used for conveying the cooling gas which is output after the base is cooled to the cooling device.
Optionally, the method further includes: the gas output pipeline is communicated with the third gas conveying pipeline and used for outputting the cooling gas after the temperature of the base is reduced; and the second control valve is used for controlling the third gas conveying pipeline to be communicated with the gas output pipeline or the recovered gas pipeline.
Optionally, the number of the cooling devices is 1 or more.
Optionally, a plurality of said cooling devices are arranged in series between the first gas delivery conduit and the second gas delivery conduit.
Optionally, a plurality of the cooling devices are arranged in parallel between the first gas conveying pipeline and the second gas conveying pipeline.
Optionally, a plurality of the cooling devices are arranged between the first gas conveying pipeline and the second gas conveying pipeline in a combination of series connection and parallel connection.
Optionally, the material of the base comprises titanium.
Accordingly, the present invention also provides a plasma processing apparatus comprising: a reaction chamber; the lower electrode assembly is positioned at the bottom in the reaction cavity. Optionally, the plasma processing apparatus includes a capacitively-coupled plasma processing apparatus or an inductively-coupled plasma processing apparatus.
Correspondingly, the invention also provides an operating method of the plasma processing device, which comprises the following steps: providing the plasma processing apparatus; providing cooling gas, conveying the cooling gas to a cooling device through a first gas conveying pipeline, and cooling the cooling gas by using the cooling device; the cooled cooling gas is conveyed to the cooling channel through a second gas conveying pipeline to cool the base; and outputting the cooling gas after cooling the base through a third gas conveying pipeline.
Optionally, the preset working temperature is-110 to 25 ℃.
Optionally, the temperature of the cooling gas before entering the cooling device through the first gas conveying pipeline is as follows: 10-30 ℃; the flow rate of the cooling gas is as follows: 0 ml/min-1000 ml/min.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following beneficial effects:
in the lower electrode assembly provided by the technical scheme of the invention, the cooling gas is conveyed to the cooling device through the first gas conveying pipeline, the cooling is carried out under the action of the cooling device, and the cooled cooling gas is conveyed into the cooling channel through the second gas conveying pipeline. And the cooled cooling gas is cooled in the flowing process of the cooling channel so as to reach the preset working temperature. Because the liquefaction temperature of the cooling gas is lower than the preset working temperature of the base, the cooling gas does not need to be cooled to be in a liquefied state by a cooling device, namely: the cooling gas is still in a gaseous state after being cooled by the cooling device, and the temperature of the cooled cooling gas is not too low, so that the parts in contact with the cooling gas are not easy to be damaged due to too low temperature in the process of conveying the cooled cooling gas in the cooling channel, and the sealing performance of the lower electrode assembly is improved.
Drawings
FIG. 1 is a schematic view of a lower electrode assembly for a plasma processing apparatus according to the present invention;
FIG. 2 is a schematic view of another lower electrode assembly for a plasma processing apparatus according to the present invention;
FIG. 3 is a schematic view of a lower electrode assembly for a plasma processing apparatus according to still another embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a plasma processing apparatus according to the present invention;
FIG. 5 is a flow chart of a method of operating a plasma processing apparatus of the present invention.
Detailed Description
As described in the background art, the conventional base is easily damaged by cooling the lower electrode assembly.
The research finds that: in some semiconductor manufacturing processes, for example: in the deep silicon etching process, a low-temperature condition (minus seventy degrees centigrade or lower) is needed to improve the etching depth-to-width ratio and reduce the roughness of the side wall, and researches show that a good etching effect can be achieved at minus 110 degrees centigrade. The existing base is refrigerated by adopting low-temperature liquid such as circulating liquid nitrogen, and although the low-temperature requirement can be met, the low-temperature liquid has great challenge on the low-temperature tolerance/sealing performance of contact parts.
In view of the above, the present invention provides a lower electrode assembly, a plasma processing apparatus and a method for operating the same, wherein the lower electrode assembly includes: a base having a predetermined operating temperature and a cooling channel therein, the cooling channel including a cooling input and a cooling output; a cooling gas having a liquefaction temperature lower than the preset working temperature; the cooling device is used for cooling the cooling gas; a first gas delivery conduit for delivering the cooling gas to a cooling device; the second gas conveying pipeline is communicated with the cooling input end and is used for conveying the cooled cooling gas into the cooling channel, and the cooled cooling gas cools the base to reach the preset working temperature; and the third gas conveying pipeline is communicated with the cooling output end and is used for outputting the cooling gas after the base is cooled. Utilize when electrode subassembly cools down the base, be favorable to reducing cooling gas and cause the damage to contact member, improve electrode subassembly's leakproofness down.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 1 is a schematic view of a lower electrode assembly for a plasma processing apparatus according to the present invention.
Referring to fig. 1, a susceptor 100 having a predetermined operating temperature and a cooling channel 101 therein, the cooling channel 101 including a cooling input terminal a1 and a cooling output terminal B1; a cooling gas 102 having a liquefaction temperature lower than the preset operating temperature; a cooling device 103 for cooling the cooling gas 102; a first gas delivery duct 104 for delivering said cooling gas 102 to a cooling device 103; the second gas conveying pipeline 105 is communicated with the cooling input end a1 and is used for conveying the cooled cooling gas 102 into the cooling channel 101, and the cooled cooling gas 102 cools the pedestal 100 to reach the preset working temperature; and a third gas delivery duct 106, which is communicated with the cooling output end B1, and is used for outputting the cooling gas 102 after cooling the susceptor 100.
The base 100 is used for bearing a substrate to be processed, the preset working temperature of the base 100 is different in different processes, and in some semiconductor manufacturing processes, such as a deep silicon etching process, a lower preset working temperature is required to improve the etching depth-to-width ratio and reduce the roughness of a side wall.
In this embodiment, the preset operating temperature range is: 110 ℃ to 25 ℃.
In the present embodiment, the cooling gas 102 is nitrogen. In other embodiments, the cooling gas comprises: at least one of helium, methane, or oxygen, or a combination of nitrogen and at least one of helium, methane, or oxygen.
In the present embodiment, the significance of selecting nitrogen as the cooling gas 102 is: on one hand, the nitrogen is low in price, and on the other hand, the nitrogen is inert gas and is safe in the using process.
In this embodiment, the cooling device 103 is a liquid nitrogen device. In other embodiments, the cooling device may be other devices having cooling capabilities. The cooling gas 102 is delivered to the cooling device 103 through a first gas delivery pipe 104, and the cooling device 103 is used for cooling the cooling gas 102.
In this embodiment, the method further includes: a first control valve 107, wherein the first control valve 107 is used for controlling the flow rate of the cooling gas 102. When the preset working temperature of the susceptor is lower, the flow rate of the cooling gas 102 can be reduced, so that the time for the cooling gas 102 to flow through the cooling device 103 is longer, the cooling gas 102 is cooled by the cooling device 103 more sufficiently, and the temperature of the cooling gas 102 flowing out of the cooling device 103 is lower, which is beneficial for enabling the temperature of the susceptor to reach the lower preset working temperature; conversely, when the preset operating temperature of the susceptor is higher, the flow rate of the cooling gas 102 can be increased to make the time for the cooling gas 102 to flow through the cooling device 103 shorter, so that the cooling gas 102 is cooled by the cooling device 103 less sufficiently, and the temperature of the cooling gas 102 flowing out of the cooling device 103 is higher, which is beneficial to make the temperature of the susceptor reach the higher preset operating temperature.
The cooling gas 102 cooled by the cooling device 103 is input to the cooling input end a1 of the cooling channel 101 through the second gas transmission pipeline 105, and the cooling gas 102 cools the susceptor 100 in the process of being transported in the cooling channel 101 so as to reach the preset working temperature.
Since the liquefaction temperature of the cooling gas 102 is lower than the preset working temperature, the cooling gas 102 only needs to be cooled to the preset working temperature when being cooled by the cooling device 103, and the cooling gas 102 is still gas at the preset working temperature, that is: the temperature of the cooling gas 102 is not too low, so that the cooling gas 102 is not easy to damage the cooling gas contact part, and the sealing performance of the lower electrode assembly is improved.
In the present embodiment, the material of the susceptor 100 includes titanium, and titanium is selected as the material of the susceptor 100, so that when the cooling gas 102 cools the susceptor 100, the temperature of the cooling gas 102 is too low, which may cause cracking of the susceptor 100.
The cooled gas 102 exits through the cooled output end B1 and is output through the third gas delivery conduit 106.
In this embodiment, since the cooling gas 102 is nitrogen, which is a harmless gas, the cooling gas 102 output from the cooling output terminal B1 can be directly discharged to the atmosphere.
In other embodiments, further comprising: the recycling gas pipeline is communicated with the third gas conveying pipeline and is used for conveying the cooling gas output after the temperature of the base is reduced to a cooling device; the gas output pipeline is communicated with the third gas conveying pipeline and used for outputting the cooling gas after the temperature of the base is reduced; and the second control valve is used for controlling the third gas conveying pipeline to be communicated with the gas output pipeline or the recovered gas pipeline.
In the present embodiment, the number of the cooling devices 103 is described as 1. In other embodiments, the number of cooling devices is greater than 1.
Fig. 2 is a schematic view of the structure of another lower electrode assembly for a plasma processing apparatus according to the present invention.
In this embodiment, the number of the cooling devices 203 is two, and the two cooling devices 203 are connected in parallel.
In other embodiments, the number of the cooling devices is multiple, and the multiple cooling devices are connected in parallel.
In this embodiment, the cooling gas 202 is branched during the transportation through the first gas transportation pipe 204, wherein a part of the cooling gas 202 is cooled by the cooling device 203a, and another part of the cooling gas 202 is cooled by the cooling device 203b, compared with the case that all the cooling gas 202 is cooled by one cooling device 203, the contact area between the cooling gas 202 and the cooling devices 203a and 203b is larger, and therefore, when the flow rates are equal, the temperature of the cooling gas 202 after passing through the cooling devices 203a and 203b is lower, which is beneficial to improving the cooling efficiency.
Fig. 3 is a schematic view of a lower electrode assembly for a plasma processing apparatus according to still another embodiment of the present invention.
In this embodiment, the number of the cooling devices 303 is two, and the two cooling devices 303 are connected in series. In other embodiments, the number of the cooling devices is more than two, and the more than two cooling devices are connected in series.
In this embodiment, because two cooling devices 303 are connected in series, so that the cooling gas 302 is sequentially cooled by each cooling device 303, so that the temperature of the cooling gas 302 is continuously reduced, and when the flow rate of the cooling gas is equal to the flow rate of the cooling gas in the case of only one cooling device 303, the temperature of the cooling gas conveyed to the cooling channel 301 is lower, therefore, when the preset working temperature is not changed, the preset working temperature can be realized by increasing the flow rate of the cooling gas 302, which is beneficial to improving the cooling efficiency.
In other embodiments, a plurality of the cooling devices are arranged in series and parallel combinations.
FIG. 4 is a schematic structural diagram of a plasma processing apparatus according to the present invention.
Referring to fig. 4, a reaction chamber 400; and a lower electrode assembly 401 disposed at the bottom of the reaction chamber 400.
In this embodiment, the plasma processing apparatus is described as a capacitively-coupled plasma processing apparatus. When the plasma processing apparatus is a capacitively-coupled plasma processing apparatus, the method further comprises: a gas shower head 402 positioned in the reaction chamber 400, wherein the gas shower head 402 is arranged opposite to the lower electrode assembly 401;
in other embodiments, the plasma processing apparatus includes: an inductively coupled plasma processing apparatus, the inductively coupled plasma processing apparatus further comprising: the reactor comprises an insulating window positioned at the top of the reaction chamber and an inductance coil positioned on the insulating window.
Referring to fig. 5, step S1: providing the plasma processing apparatus; step S2: providing cooling gas, conveying the cooling gas to a cooling device through a first gas conveying pipeline, and cooling the cooling gas by using the cooling device; step S3: the cooled cooling gas is conveyed to the cooling channel through a second gas conveying pipeline to cool the base; step S4: and outputting the cooling gas after cooling the base through a third gas conveying pipeline.
In this embodiment, the preset operating temperature is-110 to 25 ℃.
In this embodiment, the temperature of the cooling gas before entering the cooling device through the first gas delivery pipe is: 10-30 ℃; the flow rate of the cooling gas is as follows: 0 ml/min-1000 ml/min.
And the cooling gas is conveyed to a cooling device through a first gas conveying pipeline, the cooling device is cooled under the action of the cooling device, and the cooled cooling gas is conveyed into a cooling channel through a second gas conveying pipeline. And the cooled cooling gas is cooled in the flowing process of the cooling channel so as to reach the preset working temperature. Because the liquefaction temperature of the cooling gas is lower than the preset working temperature of the base, the cooling gas does not need to be cooled to be in a liquefied state by a cooling device, namely: the cooling gas is still in a gaseous state after being cooled by the cooling device, and the temperature of the cooled cooling gas is not too low, so that the parts in contact with the cooling gas are not easy to be damaged due to too low temperature in the process of conveying the cooled cooling gas in the cooling channel, and the sealing performance of the lower electrode assembly is improved.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (16)
1. A lower electrode assembly for a plasma processing apparatus, comprising:
a base having a predetermined operating temperature and a cooling channel therein, the cooling channel including a cooling input and a cooling output;
a cooling gas having a liquefaction temperature lower than the preset working temperature;
the cooling device is used for cooling the cooling gas;
a first gas delivery conduit for delivering the cooling gas to a cooling device;
the second gas conveying pipeline is communicated with the cooling input end and is used for conveying the cooled cooling gas into the cooling channel, and the cooled cooling gas cools the base to reach the preset working temperature;
and the third gas conveying pipeline is communicated with the cooling output end and is used for outputting the cooling gas after the base is cooled.
2. The lower electrode assembly for a plasma processing apparatus as recited in claim 1, wherein said cooling gas comprises: at least one of nitrogen, helium, methane, or oxygen.
3. The bottom electrode assembly for a plasma processing apparatus according to claim 1, wherein the cooling means is a liquid nitrogen device.
4. The lower electrode assembly for a plasma processing apparatus as recited in claim 1, further comprising: a first control valve for controlling the flow rate of the cooling gas into the cooling device.
5. The lower electrode assembly for a plasma processing apparatus as recited in claim 1, further comprising: and the recovered gas pipeline is communicated with the third gas conveying pipeline and is used for conveying the cooling gas which is output after the base is cooled to the cooling device.
6. The lower electrode assembly for a plasma processing apparatus as recited in claim 5, further comprising: the gas output pipeline is communicated with the third gas conveying pipeline and used for outputting the cooling gas after the temperature of the base is reduced; and the second control valve is used for controlling the third gas conveying pipeline to be communicated with the gas output pipeline or the recovered gas pipeline.
7. The bottom electrode assembly for a plasma processing apparatus according to claim 1, wherein the number of the cooling means is 1 or more.
8. The lower electrode assembly for a plasma processing apparatus according to claim 7, wherein a plurality of the cooling devices are disposed in series between the first gas delivery conduit and the second gas delivery conduit.
9. The lower electrode assembly for a plasma processing apparatus according to claim 7, wherein a plurality of the cooling devices are disposed in parallel between the first gas delivery conduit and the second gas delivery conduit.
10. The lower electrode assembly for a plasma processing apparatus according to claim 7, wherein a plurality of the cooling devices are disposed between the first gas delivery conduit and the second gas delivery conduit in combination of series and parallel.
11. The lower electrode assembly for a plasma processing apparatus according to claim 1, wherein a material of the susceptor comprises titanium.
12. A plasma processing apparatus, comprising:
a reaction chamber;
the lower electrode assembly according to any one of claims 1 to 11, located at the bottom of the reaction chamber.
13. The plasma processing apparatus of claim 12 wherein the plasma processing apparatus comprises a capacitively-coupled plasma processing apparatus or an inductively-coupled plasma processing apparatus.
14. A method of operating a plasma processing apparatus, comprising:
providing a plasma processing apparatus according to any one of claim 12 to claim 13;
providing cooling gas, conveying the cooling gas to a cooling device through a first gas conveying pipeline, and cooling the cooling gas by using the cooling device;
the cooled cooling gas is conveyed into the cooling channel through a second gas conveying pipeline, and the cooled cooling gas cools the base in the process of conveying through the cooling channel;
and outputting the cooling gas after cooling the base through a third gas conveying pipeline.
15. The method of claim 14, wherein the predetermined operating temperature is between-110 degrees celsius and 25 degrees celsius.
16. The method of claim 15 wherein the temperature of the cooling gas prior to entering the cooling device through the first gas delivery conduit is: 10-30 ℃; the flow rate of the cooling gas is as follows: 0 ml/min-1000 ml/min.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN201911381446.2A CN113053715B (en) | 2019-12-27 | 2019-12-27 | Lower electrode assembly, plasma processing device and working method thereof |
| TW109140157A TWI829979B (en) | 2019-12-27 | 2020-11-17 | Lower electrode element, plasma processing device and working method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911381446.2A CN113053715B (en) | 2019-12-27 | 2019-12-27 | Lower electrode assembly, plasma processing device and working method thereof |
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| CN113053715A true CN113053715A (en) | 2021-06-29 |
| CN113053715B CN113053715B (en) | 2023-03-31 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114121584A (en) * | 2021-11-22 | 2022-03-01 | 北京北方华创微电子装备有限公司 | Lower electrode assembly, semiconductor processing equipment and lower electrode condensation preventing method |
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI829979B (en) | 2024-01-21 |
| CN113053715B (en) | 2023-03-31 |
| TW202125576A (en) | 2021-07-01 |
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