CN103794527B - Electrostatic chuck heating means - Google Patents
Electrostatic chuck heating means Download PDFInfo
- Publication number
- CN103794527B CN103794527B CN201210422960.8A CN201210422960A CN103794527B CN 103794527 B CN103794527 B CN 103794527B CN 201210422960 A CN201210422960 A CN 201210422960A CN 103794527 B CN103794527 B CN 103794527B
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- temperature
- electrostatic chuck
- gas
- cooling liquid
- heated
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Abstract
The present invention relates to a kind of electrostatic chuck heating means and system.Electrostatic chuck is used for carrying wafer, it includes insulating barrier setting up and down and pedestal, insulating barrier is provided with a heater, for by wafer is heated in the heating of electrostatic chuck, pedestal is provided with at least one cooling liquid flowing channel, for injecting the temperature of fluid regulation electrostatic chuck, the method comprises the steps:, with heater, from the first temperature, electrostatic chuck is heated to the second temperature；Injecting the first gas to cooling liquid flowing channel, the first gas cooled liquid stream road exothermic conversion is first fluid, so that electrostatic chuck is heated to the 3rd temperature from the second temperature.The present invention, while making electrostatic chuck be rapidly heated, is effectively ensured the homogeneity of its each regional temperature, so that each regional temperature of wafer is homogeneous, beneficially the carrying out of plasma etch process, improve wafer makes yield.
Description
Technical field
The present invention relates to semiconducter process, more particularly, it relates to a kind of electrostatic chuck heating
Method and system.
Background technology
In the technical processs such as plasma etching or chemical gaseous phase deposition, frequently with electrostatic chuck
(Electro Static Chuck is called for short ESC) fixes, supports and transmits wafer (Wafer)
Wait workpiece.Electrostatic chuck is arranged in reaction chamber, and it uses the mode of electrostatic attraction, and
Non-mechanical means fixes wafer, can reduce the mechanical loss possible to wafer, and make electrostatic card
Dish completely attaches to wafer, beneficially conduction of heat.
Existing electrostatic chuck generally includes insulating barrier and pedestal, is provided with DC electrode in insulating barrier,
After the energising of this DC electrode, wafer is applied electrostatic attraction；For making electrostatic chuck have sufficiently large liter
Temperature speed, and then improve the uniformity of wafer engraving, insulating barrier can also be laid a heater,
In order to add thermal bimorph by electrostatic chuck；Pedestal is provided with cooling liquid flowing channel, and it injects coolant pair
Electrostatic chuck cools down.
In prior art, while electrostatic chuck is rapidly heated, it is difficult to ensure that each district of electrostatic chuck
The homogeneity of territory temperature, the temperature in each region has obvious difference and even forms cold-zone and heat
District, thus it is also uneven to the heating of wafer, the technique effect that plasma is etched by this
Fruit brings bad impact.
Therefore, while making electrostatic chuck be rapidly heated, it is ensured that the homogeneity of its each regional temperature,
It is the technical issues that need to address of the present invention.
Summary of the invention
It is an object of the invention to provide a kind of electrostatic chuck heating means, it makes electrostatic chuck fast
While speed heats up, it is ensured that the homogeneity of its each regional temperature.
For achieving the above object, technical scheme is as follows:
A kind of electrostatic chuck heating means, electrostatic chuck is used for carrying wafer, and it includes setting up and down
Insulating barrier and pedestal, insulating barrier is provided with a heater, for by the heating to electrostatic chuck
Heat wafer, pedestal is provided with at least one cooling liquid flowing channel, be used for injecting fluid regulation electrostatic card
The temperature of dish, the method comprises the steps: a), with heater by electrostatic chuck from the first temperature
It is heated to the second temperature；B) the first gas, the first cooled liquid of gas, to cooling liquid flowing channel are injected
Runner exothermic conversion is first fluid, so that electrostatic chuck is heated to the 3rd temperature from the second temperature.
Preferably, the second temperature and the difference of the first temperature are much larger than the 3rd temperature and the second temperature
Difference.
The electrostatic chuck heating means that the present invention provides, while making electrostatic chuck be rapidly heated,
The homogeneity of its each regional temperature is effectively ensured, so that each regional temperature of wafer is homogeneous, is conducive to
The carrying out of plasma etch process, improve wafer makes yield.
Another object of the present invention is to provide a kind of electrostatic chuck heating system, it is beneficial to realize quiet
The homogeneity of the electricity each regional temperature of chuck.
For achieving the above object, the another technical scheme of the present invention is as follows:
A kind of electrostatic chuck heating system, including: electrostatic chuck, it includes insulation setting up and down
Layer and pedestal, be provided with a heater for electrostatic chuck is heated to the from the first temperature in insulating barrier
Two temperature, are provided with at least one cooling liquid flowing channel in pedestal；Temperature conditioning unit, for cooling liquid flowing channel
Injecting the first gas, the first gas cooled liquid stream road exothermic conversion is first fluid, with by electrostatic
Chuck is heated to the 3rd temperature from the second temperature；First conduit, connects temperature conditioning unit and cooling liquid stream
Road, the first gas injects cooling liquid flowing channel through the first conduit；And second conduit, the second conduit is even
Connecing cooling liquid flowing channel and temperature conditioning unit, first fluid flows to temperature conditioning unit through the second conduit；Temperature control list
The first fluid flowing to temperature conditioning unit is converted into the first gas by unit.
The invention also discloses a kind of plasma processing apparatus, for therein to be added to being placed on
Workpiece carries out plasma-treating technology, including: reaction chamber, plasma is carried out for wherein
Body processes technique；Electrostatic chuck heating system, electrostatic chuck is positioned in reaction chamber, is used for fixing
Workpiece to be added.
Accompanying drawing explanation
Fig. 1 illustrates the electrostatic chuck heating means schematic flow sheet of first embodiment of the invention；
Fig. 2 illustrates the electrostatic chuck heating means schematic flow sheet of second embodiment of the invention；
Fig. 3 illustrates the electrostatic chuck heating means schematic flow sheet of third embodiment of the invention；
Fig. 4 illustrates the electrostatic chuck heating system structural representation of fourth embodiment of the invention.
Detailed description of the invention
Below in conjunction with the accompanying drawings, the detailed description of the invention of the present invention is described in further detail.
It should be noted that any embodiment of the present invention provide electrostatic chuck heating means and be
System is used to wafer is carried out plasma-treating technology, and this technique is carried out in a reaction chamber,
Electrostatic chuck is located at reaction chamber bottom, is used for carrying wafer.Electrostatic chuck includes setting up and down
Insulating barrier and pedestal, be provided with heater in insulating barrier, heater is by coming the heating of electrostatic chuck
Heating wafer, facilitates wafer to react with the plasma in reaction chamber, thus realizes crystalline substance
The processing and manufacturing of circle；Pedestal is provided with cooling liquid flowing channel, is commonly used for injecting coolant to electrostatic
Chuck cools down.In the present invention, by injecting gas to cooling liquid flowing channel, by gas
The liquefaction of conduction of heat or gas carrys out further heated electrostatic chuck..
As it is shown in figure 1, the electrostatic chuck heating means of first embodiment of the invention comprise the steps:
Electrostatic chuck is heated to the second temperature by step S11, heater.
Specifically, with the heater in electrostatic chuck, electrostatic chuck is heated to second from the first temperature
Temperature.
Step S12, injecting the first gas to cooling liquid flowing channel, the first gas is in cooling liquid flowing channel
Exothermic conversion is first fluid, and from the second temperature, electrostatic chuck is heated to the 3rd temperature.
Specifically, the first gas can liquefy in cooling liquid flowing channel, and distributes heat, these heats
Absorbed by electrostatic chuck, so that electrostatic chuck rises to the 3rd temperature from the second temperature.
Further, the second temperature and the difference of the first temperature are much larger than the 3rd temperature and the second temperature
Difference.
In a concrete technical process, need while making wafer be rapidly heated, keep crystalline substance
The temperature uniformity in each region of circle.According to this embodiment, with heater, electrostatic chuck is taken the photograph from 20
Family name's degree is heated to 80 degrees Celsius, and the i.e. first temperature is 20 degrees Celsius, the second temperature is 80 Celsius
Degree；Injecting the first gas to cooling liquid flowing channel again, the first gas liquefies wherein with by electrostatic chuck
From 80 degrees Centigrade to 90 degree Celsius, the i.e. the 3rd temperature is 90 degrees Celsius.
The electrostatic chuck heating means that this embodiment provides, first add electrostatic chuck with heater
Heat, so that it is rapidly heated thus heats wafer, is raised to second close to the 3rd temperature in temperature
During temperature, stop using heater heated electrostatic chuck；Heat can be distributed subsequently, based on gas liquefaction
Measure this principle, liquefy in cooling liquid flowing channel with the first gas, thus heated electrostatic chuck again,
It is allowed to warm to the 3rd temperature.
It is warming up to the process of the 3rd temperature from the second temperature, is warming up to second relative to from the first temperature
The process of temperature, the most slowly, thus the gradient of variations in temperature is less, favourable while heating up
In the homogeneity reaching each regional temperature of electrostatic chuck upper surface.According to the present invention, wafer is quickly
While intensification, each region of wafer maintains the homogeneity of temperature, thus beneficially at plasma
The carrying out of science and engineering skill, improve wafer makes yield.
According to another detailed description of the invention of the present embodiment, the first gas is the gas that temperature is higher,
It becomes, through cooling liquid flowing channel, the gas that temperature is relatively low, adds further by the way of conduction of heat
Hot electrostatic chuck so that it is rise to the 3rd temperature from the second temperature.
It is appreciated that the first gas is likely to become the gas that temperature is relatively low through cooling liquid flowing channel
The mixing of liquid produced with liquefaction, by the way of conduction of heat or gas liquefaction, by electrostatic chuck
It is heated to the 3rd temperature from the second temperature.
As in figure 2 it is shown, the electrostatic chuck heating means of second embodiment of the invention comprise the steps:
Electrostatic chuck is heated to the second temperature by step S21, heater.
Specifically, with the heater in electrostatic chuck, electrostatic chuck is quickly heated up to from the first temperature
Second temperature.
Step S22, heating unit inject the first gas to cooling liquid flowing channel, the first gas liquefaction with
Heated electrostatic chuck.
Specifically, this principle of heat can be distributed based on gas liquefaction, with a heating unit to cooling
Liquid stream road injects the first gas, by the liquefaction gently heated electrostatic chuck of the first gas.Heating
Unit includes a pump and a heater, and pump is used for injecting the first gas to cooling liquid flowing channel,
Heater is for using in subsequent step S24.
Whether step S23, detection electrostatic chuck are warming up to the 3rd temperature.
Specifically, judge that electrostatic chuck is the most warmed up to the 3rd temperature by a sensing device.
If step S24 electrostatic chuck is warmed up to the 3rd temperature, then stop；Otherwise, heating is single
Unit's heating first liquid is to generate the first gas, and returns to step S22 and continue executing with.
Specifically, the first liquid liquefied in cooling liquid flowing channel by the first gas and produce leads back to add
Hot cell, in order to realize a process recycled.If electrostatic chuck is warmed up to the 3rd temperature,
Then stop being passed through the first gas；Otherwise, the first liquid flowed back to is added by the heater of heating unit
Thermal evaporation, regenerate the first gas, return to step S22 continue through the first gas liquefaction and
Gently heated electrostatic chuck.
According to this embodiment, the second temperature is much larger than the 3rd temperature and second with the difference of the first temperature
The difference of temperature.
Further, the first gas is PFPE gas, and first liquid is liquid perfluoropolyether.
According to another detailed description of the invention according to the present embodiment, the first gas is the gas that temperature is higher
Body, it becomes, through cooling liquid flowing channel, the gas that temperature is relatively low, enters one by the way of conduction of heat
Step heated electrostatic chuck；After the first gas outflow cooling liquid flowing channel that temperature is relatively low, led back to add
Hot cell, it is heated, regenerates the first gas that temperature is higher, to circulate profit by heating unit
Heated electrostatic chuck is carried out so that it is rise to the 3rd temperature from the second temperature with the first gas.
The electrostatic chuck heating means of this embodiment, can realize being rapidly heated of electrostatic chuck, again
The each regional temperature of electrostatic chuck upper surface can be made homogeneous；Additionally, recycle with the first gas, joint
Save raw material and cost, improve capacity usage ratio, more environmentally-friendly.
As it is shown on figure 3, the electrostatic chuck heating means of third embodiment of the invention comprise the steps:
Electrostatic chuck is heated to the second temperature by step S31, heater.
Specifically, with the heater in electrostatic chuck, electrostatic chuck is quickly heated up to from the first temperature
Second temperature.
Step S32, pressure unit inject the first gas to cooling liquid flowing channel, the first gas liquefaction with
Heated electrostatic chuck.
Specifically, this principle of heat can be distributed based on gas liquefaction, with a pressure unit to cooling
Liquid stream road injects the first gas, by the liquefaction gently heated electrostatic chuck of the first gas.Blood pressure lowering
Unit includes a pump and a compressor, and pump, for injecting the first gas to cooling liquid flowing channel, is pressed
Contracting machine is for using in subsequent step S34.
Whether step S33, detection electrostatic chuck are warming up to the 3rd temperature.
Specifically, judge that electrostatic chuck is the most warmed up to the 3rd temperature by a sensing device.
If step S34 electrostatic chuck is warmed up to the 3rd temperature, then stop；Otherwise, blood pressure lowering list
Unit to generate the first gas to first liquid blood pressure lowering, and returns to step S32 and continues executing with.
Specifically, the first liquid liquefied in cooling liquid flowing channel by the first gas and produce leads back to fall
Pressure unit, in order to realize a process recycled.If electrostatic chuck is warmed up to the 3rd temperature,
Then stop being passed through the first gas；Otherwise, the compressor of the pressure unit first liquid blood pressure lowering to flowing back to
It is vaporized, regenerates the first gas, return to step S32 and continue through the liquefaction of the first gas
And gently heated electrostatic chuck.
According to this embodiment, the second temperature is much larger than the 3rd temperature and second with the difference of the first temperature
The difference of temperature.
Further, pressure unit to first liquid blood pressure lowering to regenerate the first gas after, then lead to
Cross a compress cell and the first gas carried out supercharging, on the one hand make it be passed through cooling liquid flowing channel smoothly,
On the other hand the first gas importing pressure higher can improve the heat exchange effect with electrostatic chuck.
Further, the first gas is gaseous fluorine Lyons, and first liquid is liquid freon.
The electrostatic chuck heating means of this embodiment, are realizing while electrostatic chuck is rapidly heated,
Make each regional temperature of electrostatic chuck upper surface homogeneous；Additionally, recycle with the first gas, save
Raw material and cost, improve capacity usage ratio, more environmentally-friendly.
As shown in Figure 4, the electrostatic chuck heating system of fourth embodiment of the invention includes electrostatic chuck
10, temperature conditioning unit 20 and the first conduit 31, electrostatic chuck 10 and temperature conditioning unit 20 are led with first
Pipe 31 connects.Wherein, electrostatic chuck 10 specifically includes insulating barrier 102 setting up and down and pedestal
101, insulating barrier 102 is provided with a heater 1021, for by the heating to electrostatic chuck 10
Heat wafer, pedestal 101 is provided with at least one cooling liquid flowing channel 1011, be commonly used for injecting
Coolant cools down electrostatic chuck 10, but in the present invention for producing with the first gas liquefaction
The further heated electrostatic chuck of heat 10.
Temperature conditioning unit 20 injects the first gas by the first conduit 31 to cooling liquid flowing channel 1011,
First gas liquefies as first liquid wherein, and the heat produced in liquefaction process heats quiet further
Electricity chuck 10.
Further, between temperature conditioning unit 20 and cooling liquid flowing channel 1011 also with the second conduit 32 even
Connecing, the first liquid produced after the first gas liquefaction flows back to temperature conditioning unit 20 by the second conduit 32,
So that realizing recycling of the first gas.
According to a kind of detailed description of the invention of this embodiment, temperature conditioning unit 20 includes a heating unit
With a pump, heating unit heats first liquid is to regenerate the first gas, and pump is for by first
Gas imports in cooling liquid flowing channel 1011.
According to the another kind of detailed description of the invention of this embodiment, temperature conditioning unit 20 includes a blood pressure lowering list
Unit, a compress cell and a pump, this pressure unit to first liquid blood pressure lowering to regenerate first
Gas, compress cell is for handing over the heat improving the first gas and electrostatic chuck the first gas boosting
Changing efficiency, pump is for importing the first gas in cooling liquid flowing channel 1011.
It is appreciated that the first gas can liquefy in cooling liquid flowing channel 1011, with heating further
Electrostatic chuck 10, it is possible to only become, from the gas that temperature is higher, the gas that temperature is relatively low, with by warm
Conducting further heated electrostatic chuck, now, temperature conditioning unit 20 is by relatively low for the temperature that leads back to
One gas becomes the first gas that temperature is higher, again to recycle, all by the way of heating
Fall into the scope of the present invention.
In the technical process of heated electrostatic chuck and then heating wafer, specifically, heater 1021
First electrostatic chuck 10 is heated to the second temperature by the first temperature, then by temperature conditioning unit 20 to cold
But liquid stream road 1011 injects the first gas, and the first gas liquefies wherein or carries out conduction of heat to enter
One step heated electrostatic chuck 10 is to the 3rd temperature.Second temperature is much larger than with the difference of the first temperature
The difference of the 3rd temperature and the second temperature, the such as first temperature is 20 degrees Celsius, the second temperature is
80 degrees Celsius, the 3rd temperature be 90 degrees Celsius.
It is warming up to the process of the 3rd temperature from the second temperature, is warming up to second relative to from the first temperature
The process of temperature, the most slowly, thus the gradient of variations in temperature is less, favourable while heating up
In the homogeneity reaching each regional temperature of electrostatic chuck upper surface.
Further, the length of first conduit the 31, second conduit 32 is less than 15 meters, so that warm
Control unit 20 is close to the reaction chamber residing for electrostatic chuck 10.This set is easy to reduce first
Thermal loss in gas transmission, it is to avoid the first gas is liquid before being introduced into cooling liquid flowing channel 1011
Change.
Further, being gas due to transmit in the first conduit 31, therefore temperature conditioning unit 20 sets
Some pumps can use small-power, small size, consequently facilitating arrange.
Further, first conduit the 31, second conduit 32 is made up of insulant, including but not
It is limited to Polyetherimide plastics, politef or aluminium oxide, to avoid plasma-treating technology
Middle RF Power leakage.
Further, the cross section of cooling liquid flowing channel 1011 is more than 60mm2, for example, 72mm2、
144mm2, cooling liquid flowing channel 1011 that cross section is bigger electrostatic chuck 10 of being more convenient for fully absorbs
One gas liquefaction and the heat that produces, improve the intensification efficiency of electrostatic chuck 10 and keep each district
The homogeneity of territory temperature.
Fifth embodiment of the invention provides a kind of plasma processing apparatus, for being placed on wherein
Wafer wait that workpiece carries out plasma-treating technology, including reaction chamber and electrostatic chuck
Heating system, electrostatic chuck heating system can provide, including one in invention the 4th embodiment
Electrostatic chuck and a temperature conditioning unit, electrostatic chuck is located in reaction chamber, is used for fixing workpiece to be added,
It is provided with a heater, makes electrostatic chuck be rapidly heated；Temperature conditioning unit is for electrostatic chuck
Cooling liquid flowing channel provides the first gas, with the first gas liquefaction or carry out conduction of heat the most gently
Heated electrostatic chuck.Gas ions processes technique and carries out in reaction chamber, and wafer is adsorbed to be fixed on
On electrostatic chuck, it is arranged at together in reaction chamber.
The plasma processing apparatus provided according to the above embodiment of the present invention, makes electrostatic chuck fast
While speed heats up, the homogeneity of its each regional temperature is effectively ensured, so that wafer each region temperature
Spending homogeneous, beneficially the carrying out of plasma-treating technology, improve wafer makes yield.
The above-described the preferred embodiments of the present invention that are only, described embodiment also is not used to limit this
The scope of patent protection of invention, the description of the most every utilization present invention and accompanying drawing content are made
Equivalent structure changes, and in like manner should be included in protection scope of the present invention.
Claims (4)
1. electrostatic chuck heating means, described electrostatic chuck is used for carrying wafer, and it includes
Insulating barrier setting up and down and pedestal, be provided with a heater in described insulating barrier, for by institute
State the heating of electrostatic chuck to heat described wafer, described pedestal is provided with at least one cooling liquid stream
Road, for injecting the temperature of electrostatic chuck described in fluid regulation, the method comprises the steps:
A), with described heater, described electrostatic chuck is heated to the second temperature from the first temperature；
B), to described cooling liquid flowing channel injecting the first gas, described first gas is through described coolant
Runner exothermic conversion is first fluid, so that described electrostatic chuck is heated to from described second temperature
Three temperature；
Wherein, described step b) specifically includes step:
B1), described first gas is injected by a heating unit to described cooling liquid flowing channel, described
First gas is through described cooling liquid flowing channel release heat and is converted into described first fluid, to heat
State electrostatic chuck；
B2), described heating unit heats flows to the described first fluid of described heating unit to generate
Described first gas, and circulate be passed through described cooling liquid flowing channel；
B3), repeat described step b1), b2), until described electrostatic chuck is warming up to described
3rd temperature.
2. the method for claim 1, it is characterised in that described second temperature is with described
The difference of the first temperature is much larger than the difference of described 3rd temperature with described second temperature.
3. method as claimed in claim 1 or 2, it is characterised in that described first fluid bag
Including relatively low described first gas of temperature and first liquid, described first liquid is by described first gas
Body fluid and generate.
4. method as claimed in claim 3, it is characterised in that described first gas is gaseous state
Freon or PFPE gas, described first liquid is liquid freon or liquid perfluoropolyether.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210422960.8A CN103794527B (en) | 2012-10-30 | 2012-10-30 | Electrostatic chuck heating means |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210422960.8A CN103794527B (en) | 2012-10-30 | 2012-10-30 | Electrostatic chuck heating means |
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| Publication Number | Publication Date |
|---|---|
| CN103794527A CN103794527A (en) | 2014-05-14 |
| CN103794527B true CN103794527B (en) | 2016-08-24 |
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| CN201210422960.8A Active CN103794527B (en) | 2012-10-30 | 2012-10-30 | Electrostatic chuck heating means |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106922071B (en) * | 2015-12-25 | 2019-10-01 | 中微半导体设备(上海)股份有限公司 | A kind of spray head heating-cooling device and method for plasma reaction device |
| CN108062124B (en) * | 2016-11-08 | 2020-04-07 | 中微半导体设备(上海)股份有限公司 | Temperature control wafer mounting table and temperature control method thereof |
| CN113053715B (en) * | 2019-12-27 | 2023-03-31 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly, plasma processing device and working method thereof |
| CN113130279B (en) * | 2019-12-30 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly, plasma processing device and working method thereof |
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| CN103794527A (en) | 2014-05-14 |
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