CN113046719B - Method for determining optimal proportion of metal atoms in two-dimensional material growth alloy catalyst - Google Patents
Method for determining optimal proportion of metal atoms in two-dimensional material growth alloy catalyst Download PDFInfo
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- CN113046719B CN113046719B CN202110282908.6A CN202110282908A CN113046719B CN 113046719 B CN113046719 B CN 113046719B CN 202110282908 A CN202110282908 A CN 202110282908A CN 113046719 B CN113046719 B CN 113046719B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
Abstract
The invention discloses a method for determining the optimal proportion of metal atoms in a two-dimensional material growth alloy catalyst. The method provided by the invention can form a layer of alloy catalyst layer with gradually changed metal atom proportion on the insulating substrate, the alloy catalyst layer is used as a growth substrate of the two-dimensional material, and then the optimal proportion of the metal atoms in the two-dimensional material growth alloy catalyst is rapidly determined according to the metal atom proportion at the position with the optimal growth quality of the two-dimensional material on the alloy catalyst layer.
Description
Technical Field
The invention belongs to the technical field of two-dimensional material growth, and particularly relates to a method capable of quickly determining the optimal proportion of metal atoms in a two-dimensional material growth alloy catalyst.
Background
Copper and nickel are common metals for growing two-dimensional materials (such as graphene) by a Chemical Vapor Deposition (CVD) method, and because copper has weak catalytic activity on the growth of graphene, the growth speed of graphene is slow, and on the other hand, nickel has too strong catalytic activity on the growth of graphene, and multi-layer graphene is easy to grow. In order to efficiently obtain single-layer graphene, researchers grow graphene using a copper-nickel alloy as a catalyst. In order to find the optimal copper-nickel ratio, copper and nickel with preset thicknesses (preset atomic ratio) are usually deposited on the surface of an insulating substrate in sequence, then copper-nickel alloy is obtained through annealing, then graphene is grown, and the catalytic effect of the alloy is observed; if the effect is not good, depositing copper and nickel again with another thickness (another atomic ratio), and repeating the experimental steps until the copper-nickel atomic ratio with the best catalytic effect is found.
The efficiency of finding the optimal alloy atomic ratio by the method is low, only one data can be obtained in one experiment, and the optimal component ratio needs many experiments, so that the method is time-consuming and labor-consuming.
Therefore, in view of the above technical problems, it is necessary to provide a method capable of rapidly determining the optimal ratio of metal atoms in a two-dimensional material growth alloy catalyst.
Disclosure of Invention
The invention aims to provide a method capable of quickly determining the optimal proportion of metal atoms in a two-dimensional material growth alloy catalyst so as to solve the problems in the prior art.
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
a method for determining the optimal proportion of metal atoms in a two-dimensional material growth alloy catalyst comprises the following steps:
step 1: forming a first metal catalyst layer with gradually increasing thickness along a preset direction on one surface of an insulating substrate;
step 2: forming a second metal catalyst layer having a thickness gradually decreasing in the predetermined direction on the surface of the first metal catalyst layer;
and step 3: annealing treatment, fusing the first metal catalyst layer and the second metal catalyst layer to form an alloy catalyst layer, and gradually increasing the ratio of the first metal atoms to the second metal atoms in the alloy catalyst layer along the preset direction;
and 4, step 4: growing a two-dimensional material on the surface of the alloy catalyst layer by adopting a chemical vapor deposition method;
and 5: and determining the position with the best growth quality of the two-dimensional material on the alloy catalyst layer, and determining the best proportion of the metal atoms in the two-dimensional material growth alloy catalyst according to the ratio of the first metal atoms to the second metal atoms in the alloy catalyst layer at the position.
Further, the first metal and the second metal have different catalytic activities for the growth of the two-dimensional material.
Further, the first metal is copper, and the second metal is nickel.
Further, the two-dimensional material comprises one of graphene, dimolybdenum carbide and tungsten carbide.
Further, the first metal catalyst layer and/or the second metal catalyst layer are/is formed by deposition in a magnetron sputtering mode.
Further, the insulating substrate is a silicon oxide wafer.
Further, in the step 5, the position on the alloy catalyst layer where the graphene growth quality is best is determined by combining a raman imaging technology and a scanning electron microscope.
The invention has the beneficial effects that:
according to the method provided by the invention, a layer of alloy catalyst layer with gradually changed metal atomic ratio can be formed on the insulating substrate, the alloy catalyst layer is used as a growth substrate of the two-dimensional material, and then the optimal ratio of the metal atoms in the alloy catalyst for the growth of the two-dimensional material is rapidly determined according to the metal atomic ratio at the position with the optimal growth quality of the two-dimensional material on the alloy catalyst layer.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments described in the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic view of forming a first metal catalyst layer in one embodiment of the present application;
fig. 2 is a schematic view of forming a second metal catalyst layer in one embodiment of the present application.
Description of reference numerals: 1-an insulating substrate; 2-a first metal catalyst layer; 3-a second metal catalyst layer; 4-sputter gun.
Detailed Description
In order to more fully understand the technical contents of the present invention, the technical solutions of the present invention will be further described and illustrated by the following specific examples.
In the following description, "%" and "part" representing amounts are based on weight unless otherwise specified. Unless otherwise indicated, all numbers expressing feature sizes, quantities, and physical characteristics used in the specification and claims are to be understood as being modified in all instances by the term "about". Accordingly, unless indicated to the contrary, the numerical parameters set forth in the foregoing specification and attached claims are approximations that can be suitably varied by those skilled in the art in seeking to obtain the desired properties utilizing the teachings disclosed herein.
It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus; the term "preferred" refers to a preferred alternative, but is not limited to only the selected alternative.
Referring to fig. 1 and 2, the present invention provides a method for determining an optimal ratio of metal atoms in a two-dimensional material growth alloy catalyst, which comprises the following steps:
step 1: forming a first metal catalyst layer 2 of which the thickness gradually increases along a predetermined direction on one surface of an insulating substrate 1;
and 2, step: forming a second metal catalyst layer 3 having a thickness gradually decreasing in the predetermined direction on the surface of the first metal catalyst layer 2;
and step 3: annealing treatment for fusing the first metal catalyst layer 2 and the second metal catalyst layer 3 to form an alloy catalyst layer and gradually increasing the ratio of the first metal atoms to the second metal atoms in the alloy catalyst layer in the predetermined direction;
and 4, step 4: growing a two-dimensional material on the surface of the alloy catalyst layer by adopting a chemical vapor deposition method;
and 5: and determining the position with the best growth quality of the two-dimensional material on the alloy catalyst layer, and determining the best proportion of the metal atoms in the two-dimensional material growth alloy catalyst according to the ratio of the first metal atoms to the second metal atoms in the alloy catalyst layer at the position.
Wherein the first metal and the second metal have different catalytic activities on the growth of the two-dimensional material, the first metal is preferably copper, and the second metal is preferably nickel. The insulating substrate 1 is preferably a silicon oxide wafer. The two-dimensional material may be one of graphene, dimolybdenum carbide, tungsten carbide, and hexagonal boron nitride, and is preferably graphene.
In step 1, the first metal catalyst layer 2 is deposited by means of magnetron sputtering. The specific operation mode is as follows:
referring to fig. 1, a target made of a first metal is mounted on a sputtering gun 4 of a magnetron sputtering apparatus, so that the sputtering gun 4 forms an included angle of 30-70 ° with the upper surface of an insulating substrate 1, and sputtered first metal atoms can be linearly deposited on the upper surface of the insulating substrate 1, so that the first metal atoms deposited on the surface of the insulating substrate 1 close to the sputtering gun 4 are more and the first metal atoms deposited on the surface of the insulating substrate 1 far from the sputtering gun 4 are less, thereby forming a first metal catalyst layer 2 with a gradually increasing thickness along a predetermined direction on the surface of the insulating substrate 1 by one-time sputtering.
In step 2, the second metal catalyst layer 3 is also deposited by means of magnetron sputtering. The specific operation mode is as follows:
referring to fig. 2, a target made of a second metal is installed on a sputtering gun 4 of a magnetron sputtering apparatus, an included angle between the sputtering gun 4 and the upper surface of the insulating substrate 1 is kept unchanged, then the insulating substrate 1 deposited with the first metal catalyst layer 2 is rotated by 180 °, and the magnetron sputtering apparatus is started, so that a second metal catalyst layer 3 whose thickness is gradually reduced along the predetermined direction is formed on the surface of the first metal catalyst layer 2.
In step 3, the annealing temperature may be determined according to a phase diagram of the alloy, and after annealing, an alloy catalyst layer with gradually changed proportions of the first metal atoms and the second metal atoms may be formed.
In step 4, if the chemical vapor deposition method is used to grow graphene, the carbon source may be methane, ethylene, benzene, polymethyl methacrylate, or the like.
In step 5, the position on the alloy catalyst layer where the two-dimensional material has the best growth quality can be determined by combining a raman imaging technology and a scanning electron microscope, and then the best proportion of the metal atoms in the alloy catalyst for the two-dimensional material growth can be determined according to the ratio of the first metal atoms to the second metal atoms in the alloy catalyst layer at the position.
The method provided by the invention can form an alloy catalyst layer with gradually changed metal atom ratio on the insulating substrate 1, the alloy catalyst layer is used as a growth substrate of the two-dimensional material, and then the optimal ratio of the metal atoms in the two-dimensional material growth alloy catalyst is rapidly determined according to the metal atom ratio at the position with the optimal growth quality of the two-dimensional material on the alloy catalyst layer.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
Furthermore, it should be understood that although the specification has been described in terms of embodiments, not every embodiment includes every single embodiment, and such description is for clarity purposes only, and it will be appreciated by those skilled in the art that the specification as a whole can be combined as appropriate to form other embodiments as will be apparent to those skilled in the art.
Claims (6)
1. A method for determining the optimal proportion of metal atoms in a two-dimensional material growth alloy catalyst is characterized by comprising the following steps:
step 1: forming a first metal catalyst layer with gradually increasing thickness along a preset direction on one surface of an insulating substrate;
step 2: forming a second metal catalyst layer having a thickness gradually decreasing in the predetermined direction on a surface of the first metal catalyst layer;
and step 3: annealing treatment, fusing the first metal catalyst layer and the second metal catalyst layer to form an alloy catalyst layer, and gradually increasing the ratio of the first metal atoms to the second metal atoms in the alloy catalyst layer along the preset direction;
and 4, step 4: growing a two-dimensional material on the surface of the alloy catalyst layer by adopting a chemical vapor deposition method;
and 5: determining the position with the best growth quality of the two-dimensional material on the alloy catalyst layer, and determining the best proportion of metal atoms in the two-dimensional material growth alloy catalyst according to the ratio of the first metal atoms to the second metal atoms in the alloy catalyst layer at the position;
wherein the first metal and the second metal have different catalytic activities for growth of the two-dimensional material.
2. The method of determining the optimal proportioning of metal atoms in a two-dimensional material growth alloy catalyst of claim 1 wherein the first metal is copper and the second metal is nickel.
3. The method for determining the optimal ratio of metal atoms in a two-dimensional material growth alloy catalyst according to claim 1, wherein the two-dimensional material comprises one of graphene, dimolybdenum carbide and tungsten carbide.
4. The method for determining the optimal ratio of metal atoms in a two-dimensional material growth alloy catalyst according to claim 1, wherein the first metal catalyst layer and/or the second metal catalyst layer is deposited by magnetron sputtering.
5. The method for determining the optimal proportioning of metal atoms in a two dimensional material growth alloy catalyst of claim 1 wherein the insulating substrate is a silicon oxide wafer.
6. The method for determining the optimal proportion of metal atoms in the two-dimensional material growth alloy catalyst according to claim 1, wherein the position on the alloy catalyst layer where the growth quality of the two-dimensional material is optimal is determined in step 5 by combining a Raman imaging technology and a scanning electron microscope.
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| JPH11193495A (en) * | 1997-11-04 | 1999-07-21 | Daido Steel Co Ltd | Antibacterial metallic sheet and its production |
| CN1229279C (en) * | 2002-12-05 | 2005-11-30 | 清华大学 | Array structure of nm-class carbon tubes and its preparing process |
| CN1286715C (en) * | 2002-12-21 | 2006-11-29 | 清华大学 | Carbon nanometer tube array structure and growing method thereof |
| CN1244491C (en) * | 2003-03-25 | 2006-03-08 | 清华大学 | Carbon nano tube array structure and its preparing method |
| CN100467367C (en) * | 2004-08-11 | 2009-03-11 | 清华大学 | Carbon nanometer tube array structure and its preparation method |
| CN100436310C (en) * | 2005-07-13 | 2008-11-26 | 清华大学 | Production of carbon nano-tube array |
| CN100436311C (en) * | 2005-07-22 | 2008-11-26 | 清华大学 | Method for making carbon nano tube array |
| CN101092234B (en) * | 2006-06-21 | 2011-03-23 | 鸿富锦精密工业（深圳）有限公司 | Apparatus and method for developing film of Nano carbon tube |
| KR101636442B1 (en) * | 2009-11-10 | 2016-07-21 | 삼성전자주식회사 | Method of fabricating graphene using alloy catalyst |
| KR102093441B1 (en) * | 2013-03-11 | 2020-03-25 | 삼성전자주식회사 | A method for preparing grapheme |
| CN104532206A (en) * | 2014-12-12 | 2015-04-22 | 中国科学院重庆绿色智能技术研究院 | Preparation method of graphene doped film growing on insulating substrate in in-situ growth mode |
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