CN113036012A - 一种高出光率集成单元二极管芯片 - Google Patents
一种高出光率集成单元二极管芯片 Download PDFInfo
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- CN113036012A CN113036012A CN201911356240.4A CN201911356240A CN113036012A CN 113036012 A CN113036012 A CN 113036012A CN 201911356240 A CN201911356240 A CN 201911356240A CN 113036012 A CN113036012 A CN 113036012A
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
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- 239000004332 silver Substances 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
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- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
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- 239000010936 titanium Substances 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 description 32
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (21)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201911356240.4A CN113036012B (zh) | 2019-12-25 | 2019-12-25 | 一种高出光率集成单元二极管芯片 |
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CN201911356240.4A CN113036012B (zh) | 2019-12-25 | 2019-12-25 | 一种高出光率集成单元二极管芯片 |
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CN113036012A true CN113036012A (zh) | 2021-06-25 |
CN113036012B CN113036012B (zh) | 2022-09-06 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102185073A (zh) * | 2011-04-01 | 2011-09-14 | 厦门市三安光电科技有限公司 | 一种倒装发光二极管及其制作方法 |
CN204167323U (zh) * | 2013-08-16 | 2015-02-18 | 首尔伟傲世有限公司 | 发光二极管 |
CN207489906U (zh) * | 2018-01-19 | 2018-06-12 | 厦门市三安光电科技有限公司 | 发光二极管 |
US10147849B2 (en) * | 2015-05-05 | 2018-12-04 | Xiangneng Hualei Optoelectronic Co., Ltd | Manufacturing method of flip-chip structure of group III semiconductor light emitting device |
CN109817781A (zh) * | 2019-01-31 | 2019-05-28 | 深圳第三代半导体研究院 | 一种正装集成单元发光二极管 |
-
2019
- 2019-12-25 CN CN201911356240.4A patent/CN113036012B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102185073A (zh) * | 2011-04-01 | 2011-09-14 | 厦门市三安光电科技有限公司 | 一种倒装发光二极管及其制作方法 |
CN204167323U (zh) * | 2013-08-16 | 2015-02-18 | 首尔伟傲世有限公司 | 发光二极管 |
US10147849B2 (en) * | 2015-05-05 | 2018-12-04 | Xiangneng Hualei Optoelectronic Co., Ltd | Manufacturing method of flip-chip structure of group III semiconductor light emitting device |
CN207489906U (zh) * | 2018-01-19 | 2018-06-12 | 厦门市三安光电科技有限公司 | 发光二极管 |
CN109817781A (zh) * | 2019-01-31 | 2019-05-28 | 深圳第三代半导体研究院 | 一种正装集成单元发光二极管 |
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Effective date of registration: 20230418 Address after: No. 1088, Xueyuan Avenue, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Patentee after: Southern University of Science and Technology Address before: Taizhou building, No. 1088, Xueyuan Avenue, Xili University Town, Nanshan District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN THIRD GENERATION SEMICONDUCTOR Research Institute |
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Effective date of registration: 20230713 Address after: Building 1, Building 409, No. 1310 Kukeng Sightseeing Road, Kukeng Community, Guanlan Street, Longhua District, Shenzhen City, Guangdong Province, 518109 Patentee after: Naweilang Technology (Shenzhen) Co.,Ltd. Address before: No. 1088, Xueyuan Avenue, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Patentee before: Southern University of Science and Technology |