CN111863802A - 一种垂直集成单元二极管芯片 - Google Patents
一种垂直集成单元二极管芯片 Download PDFInfo
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- CN111863802A CN111863802A CN201910333792.7A CN201910333792A CN111863802A CN 111863802 A CN111863802 A CN 111863802A CN 201910333792 A CN201910333792 A CN 201910333792A CN 111863802 A CN111863802 A CN 111863802A
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- diode
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- 238000009792 diffusion process Methods 0.000 claims abstract description 21
- 238000009826 distribution Methods 0.000 claims description 20
- 230000000737 periodic effect Effects 0.000 claims description 12
- 238000009828 non-uniform distribution Methods 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 description 10
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Led Devices (AREA)
Abstract
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Claims (22)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910333792.7A CN111863802A (zh) | 2019-04-24 | 2019-04-24 | 一种垂直集成单元二极管芯片 |
Applications Claiming Priority (1)
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CN201910333792.7A CN111863802A (zh) | 2019-04-24 | 2019-04-24 | 一种垂直集成单元二极管芯片 |
Publications (1)
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CN111863802A true CN111863802A (zh) | 2020-10-30 |
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Family Applications (1)
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CN201910333792.7A Pending CN111863802A (zh) | 2019-04-24 | 2019-04-24 | 一种垂直集成单元二极管芯片 |
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Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06244506A (ja) * | 1993-02-19 | 1994-09-02 | Sony Corp | 半導体表示装置及びその製造方法 |
TW565953B (en) * | 2001-08-30 | 2003-12-11 | Osram Opto Semiconductors Gmbh | Electro-luminescent body |
CN101661988A (zh) * | 2009-09-17 | 2010-03-03 | 上海蓝光科技有限公司 | 发光二极管芯片及其制造方法 |
CN101681971A (zh) * | 2007-06-20 | 2010-03-24 | 奥普特冈有限公司 | 发光二极管 |
CN102709432A (zh) * | 2012-05-10 | 2012-10-03 | 施科特光电材料(昆山)有限公司 | 适用于大功率GaN基LED芯片的网络状电极 |
CN103035745A (zh) * | 2012-12-31 | 2013-04-10 | 杭州士兰集成电路有限公司 | 采用刻槽工艺形成的恒流二极管及其制造方法 |
CN108281457A (zh) * | 2018-01-30 | 2018-07-13 | 澳洋集团有限公司 | Led矩阵显示阵列及其制作方法 |
CN108475712A (zh) * | 2015-12-01 | 2018-08-31 | 夏普株式会社 | 图像形成元件 |
CN109065533A (zh) * | 2018-08-07 | 2018-12-21 | 深圳市南硕明泰科技有限公司 | 一种半导体器件及其制造方法 |
CN109564930A (zh) * | 2016-05-13 | 2019-04-02 | 原子能与替代能源委员会 | 用于生产包括多个氮化镓二极管的光电设备的方法 |
-
2019
- 2019-04-24 CN CN201910333792.7A patent/CN111863802A/zh active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06244506A (ja) * | 1993-02-19 | 1994-09-02 | Sony Corp | 半導体表示装置及びその製造方法 |
TW565953B (en) * | 2001-08-30 | 2003-12-11 | Osram Opto Semiconductors Gmbh | Electro-luminescent body |
CN101681971A (zh) * | 2007-06-20 | 2010-03-24 | 奥普特冈有限公司 | 发光二极管 |
CN101661988A (zh) * | 2009-09-17 | 2010-03-03 | 上海蓝光科技有限公司 | 发光二极管芯片及其制造方法 |
CN102709432A (zh) * | 2012-05-10 | 2012-10-03 | 施科特光电材料(昆山)有限公司 | 适用于大功率GaN基LED芯片的网络状电极 |
CN103035745A (zh) * | 2012-12-31 | 2013-04-10 | 杭州士兰集成电路有限公司 | 采用刻槽工艺形成的恒流二极管及其制造方法 |
CN108475712A (zh) * | 2015-12-01 | 2018-08-31 | 夏普株式会社 | 图像形成元件 |
CN109564930A (zh) * | 2016-05-13 | 2019-04-02 | 原子能与替代能源委员会 | 用于生产包括多个氮化镓二极管的光电设备的方法 |
CN108281457A (zh) * | 2018-01-30 | 2018-07-13 | 澳洋集团有限公司 | Led矩阵显示阵列及其制作方法 |
CN109065533A (zh) * | 2018-08-07 | 2018-12-21 | 深圳市南硕明泰科技有限公司 | 一种半导体器件及其制造方法 |
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Effective date of registration: 20230412 Address after: No. 1088, Xueyuan Avenue, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Applicant after: Southern University of Science and Technology Address before: 518000 building 11, Jinxiu Dadi, 121 hudipai, Guanhu street, Longhua District, Shenzhen City, Guangdong Province Applicant before: SHENZHEN THIRD GENERATION SEMICONDUCTOR Research Institute |
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Effective date of registration: 20230712 Address after: Building 1, Building 409, No. 1310 Kukeng Sightseeing Road, Kukeng Community, Guanlan Street, Longhua District, Shenzhen City, Guangdong Province, 518109 Applicant after: Naweilang Technology (Shenzhen) Co.,Ltd. Address before: No. 1088, Xueyuan Avenue, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Applicant before: Southern University of Science and Technology |