CN113013033B - Ion beam etching method of metal thick film and application thereof - Google Patents
Ion beam etching method of metal thick film and application thereof Download PDFInfo
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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Abstract
The invention discloses an ion beam etching method of a metal thick film, which combines a thick film sample with a photoetching process and an ion beam etching method, partially etches and embrittles the metal thick film, then mechanically strips an etched area and an unetched area of the metal thick film to obtain the metal thick film with a specific desired pattern, does not change or damage the internal structure and performance of the film, and lays a technical foundation for the application of the metal thick film on a chip, an integrated circuit and an actuator. Wherein the film component for etching comprises all pure metals and alloys, the thickness of the thick film is 1-50 μm, and the photoresist comprises photoresist of all types. The etched place can be mechanically stripped from the place which is not etched and attached with the photoresist, so that metal film samples with various patterns can be obtained.
Description
Technical Field
The invention belongs to the fields of chip and integrated circuit manufacturing, electronic packaging, actuators and material science.
Background
The development of modern industrial technologies has increased the demand for high power chips and integrated circuits. In particular, 5G high frequency integrated circuits place higher demands on the power of chips and chip actuators. High power integrated circuits and chips require electrode materials that carry large currents and voltages. The metal thick film is an electrode material capable of bearing high power. In a chip and an integrated circuit, electrode materials have different patterns and need to be prepared by a process of plating first and then etching. However, existing etching techniques are only applicable to thin films. The invention tries to design a new method for etching the metal thick film based on the existing ion beam etching technology.
At present, the etching technology is an important micro-processing technology in the semiconductor technology, and comprises inductive coupling plasma etching, reactive ion etching and argon ion etching.
The principle of the inductively coupled plasma etching is that reaction gas is introduced and decomposed by using inductively coupled plasma glow discharge, the generated plasma with strong chemical activity moves to the surface of a sample under the acceleration action of an electric field, and the surface of the sample is subjected to chemical reaction to generateBecomes volatile gas and has certain physical etching effect. Mainly used for etching Si-based materials, si, siO 2 ，SiN x Low temperature deep Si etch, etc.
In reactive ion etching, a plasma generated by a gas discharge contains a large number of chemically active gas ions, which interact with the surface of the material to cause chemical reactions of surface atoms to form volatizable products. These volatile products are removed with the vacuum pumping system. The material is etched layer by layer to a specified depth as the "reaction-stripping-venting" cycles of the material surface. Besides the surface chemical reaction, the bombardment of the surface of the material by the ions with energy can also cause the sputtering of surface atoms, thereby generating certain etching action. Therefore, reactive ion etching includes a combination of both physical and chemical etching, mainly for Si, siO 2 ，SiN x Etching and removing the photoresist.
The argon ion etching is to ionize argon atoms into argon ions by utilizing a glow discharge principle, and the argon ions physically bombard the surface of a sample through the acceleration of an anode electric field so as to achieve the etching effect. Ar gas is filled into an ion source discharge chamber and ionized to form plasma, ions are led out in a beam shape by a grid and accelerated, an ion beam with certain energy enters a working chamber and is emitted to the surface of a solid to bombard atoms on the surface of the solid, so that material atoms are sputtered to achieve the aim of etching, and the method belongs to pure physical etching and is mainly used for etching complex systems of various metals, oxides and the like.
The inductively coupled plasma etching and the reactive ion etching both use chemical auxiliary materials, so that the etching rate is greatly improved, but the method is only suitable for Si-based materials and is not generally suitable for etching metal and alloy materials, meanwhile, the argon ion etching technology is a pure physical etching method, the resolution is high and can reach 10nm, the ion purity is high, the directionality is good, the energy distribution is uniform, any material can be etched, including Si-based materials, metal and alloy materials, but the etching speed is slow, the etching speed is about 10nm/min, and the etching speed is related to the etching material. The etching time of the alloy thick film with the thickness of more than 10 mu m is about more than 15 hours. The ion beam etching equipment can not work for the long time and needs to be cooled. The photoresist is denatured during the cooling process, and etching equipment cannot etch after being cooled. Moreover, since many alloy materials have complex compositions, no suitable etching gas or solution can be found, and ion beam etching technology must be adopted for etching. Therefore, an ion beam etching technology capable of accelerating the etching speed is urgently needed for etching the metal thick film material.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provides an ion beam etching method of a metal thick film and application thereof, and the ion beam etching modification and mechanical stripping method solves the problems in the prior art. The technology has the advantages of high efficiency, strong universality and good industrial application prospect. The etching of the metal thick film is performed without changing or damaging the internal structure and performance of the film. The invention provides an effective, practical and simple method for preparing various pattern metal thick films, and lays a technical foundation for the application of the metal thick films in high-power integrated circuit chips and actuators.
In order to achieve the purpose of the invention, the invention adopts the following technical scheme:
an ion beam etching method for thick metal film includes such steps as partially etching the thick metal film to become brittle, mechanically stripping the etched region of the thick metal film to obtain needed pattern on the un-etched region, and etching the thick metal film without etching it completely.
Preferably, the ion beam etching method of the metal thick film comprises the following steps:
1) According to the thickness of the metal thick film, the etching rate of the photoresist and the metal thick film and a formula
Calculating the thickness of the photoresist to be coated, wherein delta and H G 、H h 、V G And V h The ratio of the etching depth to the thickness of the metal thick film, the thickness of the photoresist, the thickness of the metal thick film,Depositing a thick film on the surface of the substrate at the etching speed of the photoresist and the etching speed of the metal thick film, and then uniformly coating the photoresist with the thickness of 0.01-50 mu m on the surface of the thick film;
2) Using a mask plate, obtaining photoresist with a required pattern after ultraviolet exposure, exposing an etching area, and dividing the whole thick film into the photoresist area and the etching area;
3) Placing the thick film into an ion beam etching machine, and extracting air at a pressure not higher than 5 × 10 -4 Pa, then introducing argon into the ion source, maintaining at 10 -2 The working air pressure of Pa level, use argon ion beam to etch the whole thick film, make photoresist area and corrasion area will be all etched; before the photoresist is completely etched, etching the metal thick film, wherein the thickness part needing to be removed by etching the thick film is not less than 10% of the thickness of the thick film;
4) And dissolving and removing the residual photoresist on the surface of the thick film by using an acetone solution, and then mechanically stripping the thick film from the substrate and transferring the thick film to other substrates so as to obtain the thick film with the required pattern.
Preferably, in the step 1), according to the formula
And calculating the thickness of the photoresist to be coated.
Preferably, in said step 3), it is maintained at 10 -2 The working pressure for etching at the Pa grade is 1-5 multiplied by 10 -2 Pa。
Preferably, the material of the metal thick film is an elemental metal or an alloy. Preferably, the elementary metal is aluminum, copper, iron, nickel, gold, silver or tungsten; the preferred alloy is iron alloy, aluminum alloy, magnesium alloy, amorphous alloy or high-entropy alloy; the photoresist is preferably a Reye RZJ-304 or AZ 4620 type photoresist; preferably, the thicknesses of the photoresist used for the metal thick films with different thicknesses are different;
preferably, the thick film has a thickness of 1-50 μm.
Preferably, the specific etching depth of the thick film is determined according to the characteristics of the metal thick film.
Preferably, for a thick film of elemental metal or alloy material, the portion of the thick film that needs to be etched away is not less than 50% of the thickness of the thick film.
Preferably, the mechanical lift-off process is a direct tear-off process or other substrate transfer process.
The invention relates to an application of an ion beam etching method of a metal thick film, which is applied to a pattern preparation process of a metal film of an integrated circuit chip or an actuator.
Compared with the prior art, the invention has the following obvious substantive characteristics and remarkable advantages:
1. the ion beam etching method of the metal thick film combines the photoetching process and the ion beam etching method with a thick film sample, the metal film is not required to be completely etched after etching, and the etched place can be mechanically stripped from the place which is not etched and attached with photoresist, so that the metal film samples with various patterns can be obtained, the etching time can be reduced, the thick film is not required to be completely etched, the etching of the thick film is realized, and the etching efficiency is increased;
2. the invention can prepare film samples of various patterns by changing the patterns on the mask plate without changing the performance of the film samples, and lays a foundation for the application of the metal thick film on a chip and an integrated circuit;
3. the method is simple and easy to implement, low in cost and suitable for popularization and application.
Drawings
FIG. 1 is a schematic view of the ion beam etching method for a thick metal film according to the present invention, wherein the first step is coating a photoresist, the second step is ultraviolet exposure, the third step is ion beam etching, and the fourth step is mechanical stripping.
FIG. 2 is a photograph of a 4-inch 10 μm thick CrMnFeCoNi high-entropy alloy film prepared by the sputtering method in example III.
FIG. 3 is a real object diagram of a 4-inch thick film obtained in an etched area after exposure, wherein a) is a real object photograph of a 4-inch 10 μm thick CrMnFeCoNi high-entropy alloy film obtained in an etched area after exposure in the third embodiment, and the photoresist is AZ 4620 photoresist 15 μm thick; b) A physical photograph of a 4 inch 10 μm thick pure aluminum film of the etched area was obtained for the four exposures of example, where the photoresist was a 5 μm thick rubin RZJ-304 photoresist.
FIG. 4 is a sample drawing of a stretched sample etched from a CrMnFeCoNi high-entropy alloy film with a thickness of 10 μm in the third example, wherein a) is an optical photograph of the stretched sample of the CrMnFeCoNi high-entropy alloy thick film, b) and c) are SEM photographs of the surface of the stretched sample of the CrMnFeCoNi high-entropy alloy thick film, and d) is a side SEM photograph of the stretched sample of the CrMnFeCoNi high-entropy alloy thick film.
FIG. 5 is a comparison graph of physical images before and after mechanical stripping of a part of a thick film etched, wherein a) is a comparison graph of physical images before and after mechanical stripping of a CrMnFeCoNi high-entropy alloy thick film with a thickness of 10 μm in example III, and b) is a comparison graph of physical images before and after mechanical stripping of a pure aluminum thick film with a thickness of 10 μm in example IV.
FIG. 6 is a tensile curve of a tensile sample etched from a 10 μm thick CrMnFeCoNi high-entropy alloy film in example III, and the result shows that the breaking strength is 1050MPa and the elongation is 0.9%, indicating that the various patterns of metal thick films etched by the above method have no change in performance.
FIG. 7 is a drawing sample obtained by etching a 10 μm thick pure aluminum film in the fourth example, wherein a) is an optical photograph of a pure aluminum thick film drawing sample, and b) is a surface SEM photograph of the pure aluminum thick film drawing sample.
FIG. 8 is a physical diagram of an etched area obtained after exposure of a 12 μm thick high manganese steel film and a mechanically peeled tensile sample in the fifth example.
Detailed Description
The above-described embodiments are further illustrated below with reference to specific examples, in which preferred embodiments of the invention are detailed below:
the first embodiment is as follows:
in this embodiment, an ion beam etching method for a metal thick film is to partially etch the metal thick film to make it brittle, and then mechanically strip the etched region of the metal thick film to obtain a specific pattern on the un-etched region to obtain a metal thick film with a desired pattern, and the thick film is etched without completely etching through the thick film.
According to the method, the metal thick film is partially etched and embrittled, then the etched area and the non-etched area of the metal thick film are mechanically stripped to obtain the metal thick film with a specific desired pattern, the internal structure and the performance of the film are not changed or damaged, and a foundation is laid for the application of the metal thick film on a chip and an integrated circuit. The etched place can be mechanically stripped from the place which is not etched and attached with the photoresist, so that metal film samples with various patterns can be obtained.
Example two
This embodiment is substantially the same as the above embodiment, with the features that:
in this embodiment, the ion beam etching method for the metal thick film includes the following steps:
1) According to the thickness of the metal thick film, the etching rate of the photoresist and the metal thick film and a formula
Calculating the thickness of the photoresist to be coated, wherein delta and H G 、H h 、V G And V h Respectively the ratio of the etching depth and the thickness of the metal thick film, the thickness of the photoresist, the thickness of the metal thick film, the etching speed of the photoresist and the etching speed of the metal thick film, depositing the thick film on the surface of the substrate, and then uniformly coating the photoresist with the thickness of 0.01-50 mu m on the surface of the thick film;
2) Using a mask plate, obtaining photoresist with a required pattern after ultraviolet exposure, exposing an etching area, and dividing the whole thick film into the photoresist area and the etching area;
3) Placing the thick film into an ion beam etching machine, and extracting air at a pressure of not higher than 5 × 10 -4 Pa, then introducing argon into the ion source, maintaining at 10 -2 The working air pressure of Pa grade is 1-5 multiplied by 10 -2 Pa, etching the whole thick film by using an argon ion beam to ensure that the photoresist area and the etching area are etched; before the photoresist is completely etched, the metal thick film is etched, and the thickness part needing to be removed by etching the thick film is not less than 10% of the thickness of the thick film;
4) And dissolving and removing the residual photoresist on the surface of the thick film by using an acetone solution, and then mechanically stripping the thick film from the substrate and transferring the thick film to other substrates so as to obtain the thick film with the required pattern.
The ion beam etching method for the metal thick film is a method combining a photoetching process and ion beam etching with a thick film sample, the metal film is not required to be completely etched after etching, and the etched place can be mechanically stripped from the place which is not etched and attached with photoresist, so that metal film samples with various patterns can be obtained, the etching time can be reduced, the thick film is not required to be completely etched, the thick film is etched, and the etching efficiency is increased; in the embodiment, film samples of various patterns can be prepared by changing the patterns on the mask plate, and the performance of the film samples is not changed, so that a foundation is laid for the application of the metal thick film on a chip and an integrated circuit; the method is simple and easy to implement, low in cost and suitable for popularization and application.
EXAMPLE III
This embodiment is substantially the same as the above embodiment, with the particularity that:
in this example, a 10 μm thick tensile-like pattern CrMnFeCoNi high entropy alloy film was prepared, comprising the steps of:
1) Cleaning the surface of a CrMnFeCoNi high-entropy alloy film with the thickness of 10 mu m, then uniformly throwing a layer of AZ 4620 type photoresist with the thickness of 15 mu m, setting the rotation speed of a spin coater to be 3500rpm and the spin coating time to be 90s, putting the photoresist into an oven, and carrying out pre-baking treatment, setting the temperature to be 100 ℃ and the time to be 40s so as to increase the adhesive capacity of the photoresist and a metal thick film;
2) Exposing the CrMnFeCoNi high-entropy alloy thick film coated with the photoresist by using a mask prepared in advance, dissolving the photosensitive positive photoresist to expose an etching area, and at the moment, dividing the whole 4-inch thick film into the etching area and the photoresist area attached with the 15-micron thick photoresist; as shown in a diagram of fig. 3, the mask used is a tensile sample pattern mask, a tensile pattern area above the obtained thick film is covered by photoresist, a non-tensile sample pattern area is an etching area, and the next step of argon ion etching is prepared;
3) Placing the sample prepared in the third step into an ion beam etching machine, etching for 8 hours, simultaneously etching the photoresist in the photoresist area and the metal film in the etching area, etching 11 microns by using the photoresist, etching 6 microns by using the metal film, and enabling the thickness of the etched metal film to account for sixty percent of the total thickness;
4) And soaking the thick film in an acetone solution for 10 minutes to remove the residual photoresist on the surface, then mechanically stripping the thick film with the stretching pattern, directly tearing the stretching pattern thick film by using a pair of tweezers, and directly tearing the whole stretching pattern area by using the tweezers or hands. Meanwhile, the method can also be used for coating ergo glue on the stretching pattern position by using a substrate transfer method, adhering the stretching pattern position on the other silicon wafer, standing for a period of time, separating the two silicon wafers, transferring the whole stretching pattern thick film to the other silicon wafer, and dissolving the ergo glue by using acetone solution to obtain the whole stretching pattern thick film. The obtained stretched sample was shown in fig. 4, in which a is a sample showing a length of 12mm for the entire sample, widths of both sides are 1.5mm, and a width of the middle stretched end is 0.1mm, and in which b and c are scanned images enlarged 40 times and 1000 times, respectively, and in which no cracks or holes were found at the edges, in conjunction with the side scanned image of the 10 μm thick metal film of fig. d. As shown in FIG. 5, a graph a is a comparison graph of a sample before and after mechanical stripping of a CrMnFeCoNi high-entropy alloy thick film with the thickness of 10 microns, and it is obvious that the thick film in an etching area is not completely etched, which shows that by adopting the etching method, sixty percent of the thickness is etched, and the surface of a sample directly mechanically stripped still keeps nano-scale smoothness.
Example four
This embodiment is substantially the same as the above embodiment, with the particularity that:
a10 μm thick film of drawn pattern pure aluminum was prepared, comprising the steps of:
1) Cleaning the surface of a pure aluminum film with the thickness of 10 microns, uniformly throwing a layer of Rehong RZJ-304 type photoresist with the thickness of 5 microns, placing the photoresist into an oven at the rotating speed of 4700rpm of a spin coater for 50s for prebaking treatment, setting the temperature at 90 ℃ and the time at 100s to increase the adhesive capacity of the photoresist and the metal thick film;
2) Exposing the pure aluminum film coated with the photoresist by using a mask plate prepared in advance, dissolving the photosensitive positive photoresist, so as to expose an etching area, and at the moment, dividing the whole 4-inch thick film into the etching area and the photoresist area attached with the photoresist with the thickness of 5 mu m; as shown in the b diagram of fig. 3, the used mask is a drawing pattern mask, a drawing pattern area above the obtained thick film is covered by photoresist, a non-drawing pattern area is an etching area, and argon ion etching in the next step is prepared;
3) Placing the sample prepared in the third step into an ion beam etching machine, etching for 5 hours, simultaneously etching the photoresist in the photoresist area and the metal film in the etching area, etching the photoresist for 4.5 mu m, etching the metal film for 5 mu m, and etching the metal film with the thickness accounting for fifty percent of the total thickness;
4) And soaking the thick film in an acetone solution for 10 minutes to remove residual photoresist on the surface, then mechanically stripping the thick film with the stretching pattern, directly tearing the thick film with the stretching pattern by using a pair of tweezers, and directly tearing the whole stretching pattern area by using the tweezers or hands. Meanwhile, an ergo glue is coated on the stretching pattern position by using a substrate transfer method, the stretching pattern position is adhered to another silicon wafer, after the silicon wafer is kept stand for a period of time, the two silicon wafers are separated, the whole stretching pattern thick film can be transferred to another silicon wafer, and the ergo glue is dissolved by using an acetone solution, so that the whole stretching pattern thick film can be obtained. The obtained drawing sample is shown in fig. 7, wherein a is a sample drawing, it can be seen that 5 pure aluminum thick film samples which are uniformly arranged have the same size, the samples are slightly bent due to internal stress, and b is a scanned image which is 30 times that of the pure aluminum drawing sample, it can be observed that no cracks and holes appear at the edge, as shown in fig. 5, b is a comparison drawing of the front and rear drawings of the pure aluminum thick film which is 10 μm thick and is mechanically stripped, it is obvious that the thick film in the etching area is not completely etched, half of the thickness is etched, and the surface of the sample which is directly and mechanically stripped still keeps nano-level smoothness.
EXAMPLE five
This embodiment is substantially the same as the above embodiment, with the features that:
the preparation method of the drawing pattern high manganese steel thick film with the thickness of 12 mu m comprises the following steps:
1) Cleaning the surface of a high manganese steel thick film with the thickness of 12 microns, uniformly throwing a layer of AZ 4620 type photoresist with the thickness of 15 microns, putting the photoresist into an oven at the rotation speed of 3500rpm of a spin coater for spin coating for 90s, and carrying out pre-baking treatment at the temperature of 100 ℃ for 40s to increase the adhesive capacity of the photoresist and the metal thick film;
2) Exposing the high manganese steel thick film coated with the photoresist by utilizing a mask prepared in advance, dissolving the photosensitive positive photoresist, and exposing an etching area, wherein the whole 4-inch thick film is divided into the etching area and the photoresist area attached with the photoresist with the thickness of 15 mu m; the used mask is a stretching pattern mask, a unit chip of a sample to be etched is arranged above the stretching pattern mask, the obtained stretching pattern area above the thick film is covered by photoresist, the non-stretching pattern area is an etching area, and the next step of argon ion etching is prepared;
3) Placing the sample prepared in the third step into an ion beam etching machine, etching for 10 hours, simultaneously etching the photoresist in the photoresist area and the metal film in the etching area, etching the photoresist for 14 mu m, etching the metal film for 8 mu m, and etching the metal film with the thickness accounting for sixty percent of the total thickness;
4) And soaking the thick film in an acetone solution for 10 minutes to remove residual photoresist on the surface, then mechanically stripping the thick film with the stretching pattern, and directly tearing off the whole stretching pattern area by using tweezers or hands. Meanwhile, an underlying transfer method can be used for coating ergo glue on the stretching pattern position, the ergo glue is adhered to another silicon wafer, after the silicon wafers are kept stand for a period of time, the two silicon wafers are separated, the whole stretching pattern thick film can be transferred to another silicon wafer, and the ergo glue is dissolved by using an acetone solution, so that the whole stretching pattern thick film can be obtained. The drawing of the obtained stretched sample is shown in fig. 8, the lower sample is a 12-micron-thick high-manganese steel film of the stretched sample pattern, and the thick film can be directly and mechanically stripped off by etching sixty-six percent of the thickness by adopting the etching method.
Example six
This embodiment is substantially the same as the above embodiment, with the particularity that:
the method for preparing the square pattern nickel-copper alloy thick film precision resistor with the thickness of 15 mu m comprises the following steps:
1) Cleaning the surface of a nickel-copper alloy film with the thickness of 15 micrometers, uniformly throwing a layer of AZ 4620 type photoresist with the thickness of 15 micrometers, placing the photoresist into an oven for pre-baking treatment at the rotation speed of 3500rpm and the photoresist homogenizing time of 90s, and setting the temperature at 100 ℃ and the time at 50s to improve the adhesive capacity of the photoresist and the metal thick film;
2) Exposing the nickel-copper alloy thick film coated with the photoresist by using a mask plate prepared in advance, dissolving the photosensitive positive photoresist, and exposing an etching area, wherein the whole 4-inch thick film is divided into the etching area and the photoresist area attached with the 15-micron thick photoresist; the mask used is a square pattern mask, and argon ion etching in the next step is prepared;
3) Placing the sample prepared in the third step into an ion beam etching machine, etching for 10 hours, simultaneously etching the photoresist in the photoresist area and the metal film in the etching area, etching the photoresist for 14 mu m, etching the metal film for 8 mu m, and enabling the thickness of the etched metal film to account for fifty-three percent of the total thickness;
4) At this time, the photoresist remained on the surface of the resistor can be removed by soaking the resistor in an acetone solution for 10 minutes, and then the resistor with the square pattern can be mechanically stripped off, and the whole area with the square pattern can be directly torn off by using a pair of tweezers or hands. Meanwhile, an underlying transfer method can be used for coating ergo glue on the square pattern position, the ergo glue is adhered to another silicon wafer, after the silicon wafers are kept stand for a period of time, the two silicon wafers are separated, the whole square pattern thick film can be transferred to another silicon wafer, and the ergo glue is dissolved by using acetone solution, so that the whole square pattern resistor can be obtained. By adopting the etching method, the thick film can be directly and mechanically stripped after being etched by fifty-three percent of thickness.
EXAMPLE seven
This embodiment is substantially the same as the above embodiment, with the features that:
the preparation method of the interdigital pattern tungsten copper alloy thick film capacitor electrode with the thickness of 5 mu m comprises the following steps:
1) Cleaning the surface of a tungsten copper film with the thickness of 5 microns, uniformly throwing a layer of Ruihong RZJ-304 type photoresist with the thickness of 5 microns, placing the photoresist into an oven for prebaking treatment at the rotation speed of 4000rpm of a spin coater for 90s at the temperature of 90 ℃ to increase the adhesion capacity of the photoresist and a metal thick film;
2) Exposing the tungsten copper thick film coated with the photoresist by using a mask prepared in advance, dissolving the photosensitive positive photoresist, and exposing an etching area, wherein the whole 4-inch thick film is divided into the etching area and the photoresist area attached with the photoresist with the thickness of 5 mu m; the mask used is an interdigital pattern mask, and argon ion etching in the next step is prepared;
3) Placing the sample prepared in the third step into an ion beam etching machine, etching for 4 hours, simultaneously etching the photoresist in the photoresist area and the metal film in the etching area, etching the photoresist for 3.6 mu m, etching the metal film for 4 mu m, and enabling the thickness of the etched metal film to account for eighty percent of the total thickness;
4) And soaking the thick film in an acetone solution for 10 minutes to remove residual photoresist on the surface, then mechanically stripping the thick film of the interdigital pattern capacitor electrode, and directly tearing off the whole interdigital pattern region by using tweezers or hands. Meanwhile, an interdigital pattern part can be coated with ergo glue by using a substrate transfer method, the ergo glue is stuck on another silicon chip, after the silicon chips are kept stand for a period of time, the two silicon chips are separated, the thick film of the whole interdigital pattern can be transferred to another silicon chip, and the ergo glue is dissolved by using acetone solution, so that the whole interdigital pattern capacitor electrode can be obtained. By adopting the etching method, eighty percent of the thickness is etched, and the thick film can be directly and mechanically stripped.
Example eight
This embodiment is substantially the same as the above embodiment, with the particularity that:
the method for preparing the pure copper thick film interconnection line with the strip pattern and the thickness of 20 mu m comprises the following steps:
1) Cleaning the surface of a pure copper film with the thickness of 20 micrometers, uniformly throwing a layer of AZ 4620 type photoresist with the thickness of 15 micrometers, placing the photoresist into an oven for pre-baking treatment at the temperature of 90 ℃ for 100 seconds at the rotating speed of 4500rpm of a spin coater, wherein the spin time is 60 seconds, so as to increase the adhesive capacity of the photoresist and the metal thick film;
2) Exposing the pure copper thick film coated with the photoresist by using a mask plate prepared in advance, dissolving the photosensitive positive photoresist, and exposing an etching area, wherein the whole 4-inch thick film is divided into the etching area and the photoresist area attached with the 15-micron thick photoresist; the mask used is a strip-shaped pattern mask, and argon ion etching in the next step is prepared;
3) Placing the sample prepared in the third step into an ion beam etching machine, etching for 10 hours, simultaneously etching the photoresist in the photoresist area and the metal film in the etching area, etching the photoresist for 14 micrometers, etching the metal film for 8 micrometers, and etching the metal film with the thickness accounting for forty percent of the total thickness;
4) And soaking the thick film in an acetone solution for 10 minutes to remove residual photoresist on the surface, then mechanically stripping the thick film of the bar-shaped pattern interconnection line, and directly tearing off the whole bar-shaped pattern area by using tweezers or hands. Meanwhile, an ergo glue is coated on the strip-shaped pattern position by using a substrate transfer method, the ergo glue is adhered to another glass sheet, after the silicon sheet and the glass sheet are kept stand for a period of time, the silicon sheet and the glass sheet are separated, the whole thick film of the strip-shaped pattern can be transferred to another glass sheet, and the ergo glue is dissolved by using an acetone solution, so that the interconnection line of the strip-shaped pattern can be obtained. By adopting the etching method, the thick film can be directly mechanically stripped after etching the forty percent of thickness.
The above examples take a CrMnFeCoNi high-entropy alloy thick film as an example, FIG. 2 shows a 4-inch CrMnFeCoNi high-entropy alloy thick film with a uniform thickness of 10 μm, and a in FIG. 3 is an entire thick film with an exposed etching region.
And detecting whether the sample mechanically stripped off after the metal thick film is etched has a smooth boundary or not by using a high-definition camera and a Scanning Electron Microscope (SEM). As shown in fig. 4, a is the overall appearance of the thick film stretching pattern sample prepared by high-definition camera shooting, b and c are respectively the scanning appearances of 40 times and 1000 times of magnification, and d is the scanning appearance of side shooting, and it can be seen that the boundary of the crmnffeni high-entropy alloy thick film stretching sample is very smooth, and no cracks or holes exist. Among these, methods for mechanically peeling off thick films include direct-peel and other substrate transfer methods.
As shown in FIG. 5, a diagram a is a comparison diagram of a front object diagram and a rear object diagram of mechanical stripping of a CrMnFeCoNi high-entropy alloy thick film with the thickness of 10 mu m, and obviously shows that the thick film in an etching area is not completely etched.
A stretching machine is used for stretching a CrMnFeCoNi high-entropy alloy thick film stretching sample, and the result shows that the breaking strength is 1050MPa and the elongation is 0.9 percent, which indicates that the performance of various pattern metal thick films prepared by etching by the method is not changed. The invention provides an ion beam etching technology for a metal thick film, which combines a photoetching technology and an ion beam etching method with a thick film sample, wherein after etching, a metal film does not need to be completely etched, and an etched place can be mechanically stripped from a place which is not etched and attached with photoresist, so that metal film samples with various patterns can be obtained.
The ion beam etching method for the metal thick film in the embodiment is a method combining a photoetching process and ion beam etching with a thick film sample, the metal thick film is partially etched and embrittled, then an etched area and an unetched area of the metal thick film are mechanically stripped to obtain the metal thick film with a specific desired pattern, the internal structure and the performance of the film are not changed or damaged, and a technical basis is laid for the application of the metal thick film on a chip, an integrated circuit and an actuator. Wherein the film component for etching comprises all pure metals and alloys, the thickness of the thick film is 1-50 μm, and the photoresist comprises all types of photoresist. The etched place can be mechanically stripped from the place which is not etched and attached with the photoresist, so that metal film samples with various patterns can be obtained.
The embodiments of the present invention have been described with reference to the accompanying drawings, but the present invention is not limited to the embodiments, and various changes and modifications can be made according to the purpose of the invention, and any changes, modifications, substitutions, combinations or simplifications made according to the spirit and principle of the technical solution of the present invention shall be equivalent substitutions, as long as the purpose of the present invention is met, and the present invention shall fall within the protection scope of the present invention without departing from the technical principle and inventive concept of the present invention.
Claims (9)
1. An ion beam etching method for a metal thick film is characterized in that the metal thick film is partially etched and becomes brittle, then an etched area of the metal thick film is mechanically stripped, a specific needed pattern is obtained in an un-etched area, the metal thick film with a needed pattern is obtained, and etching of the thick film is achieved without completely etching through the thick film.
2. The method of claim 1, comprising the steps of:
1) According to the thickness of the metal thick film, the etching rate of the photoresist and the metal thick film and a formula
Calculating the thickness of the photoresist to be coated, wherein delta and H G 、H h 、V G And V h Respectively the ratio of the etching depth and the thickness of the metal thick film, the thickness of the photoresist, the thickness of the metal thick film, the etching speed of the photoresist and the etching speed of the metal thick film, depositing the thick film on the surface of the substrate, and then uniformly coating the photoresist with the thickness of 0.01-50 mu m on the surface of the thick film;
2) Using a mask plate, obtaining photoresist with a required pattern after ultraviolet exposure, exposing an etching area, and dividing the whole thick film into the photoresist area and the etching area;
3) Placing the thick film into an ion beam etching machine, and extracting air at a pressure not higher than 5 × 10 -4 Pa, then introducing argon into the ion source, and keeping the pressure at 10 -2 The working pressure of Pa level, use argon ion beam to etch the whole thick film, make photoresist area and etching area all etched; before the photoresist is completely etched, the metal thick film is etched, and the thickness part needing to be removed by etching the thick film is not less than 10% of the thickness of the thick film;
4) And dissolving and removing the residual photoresist on the surface of the thick film by using an acetone solution, then mechanically stripping the thick film from the substrate, and transferring the thick film to other substrates, thereby obtaining the thick film with the required pattern.
3. The ion beam etching method of the metal thick film according to claim 2, characterized in that: in the step 1), according to the formula
And calculating the thickness of the photoresist to be coated.
4. The ion beam etching method of the metal thick film according to claim 2, characterized in that: in said step 3), is maintained at 10 -2 The working pressure for etching at Pa level is 1-5 × 10 -2 Pa。
5. The ion beam etching method of a metal thick film according to claim 1 or 2, characterized in that: the metal thick film is made of simple substance metal or alloy.
6. The ion beam etching method of a metal thick film according to claim 1 or 2, characterized in that: the thickness of the thick film is 1-50 μm.
7. The ion beam etching method of a metal thick film according to claim 1 or 2, wherein: the specific etching depth of the thick film is determined according to the characteristics of the metal thick film.
8. The ion beam etching method of a metal thick film according to claim 1 or 2, wherein: for a thick film of elemental metal or alloy material, the portion of the thick film that needs to be etched to remove is no less than 50% of the thickness of the thick film.
9. Use of a method of ion beam etching of a metal thick film as claimed in claim 1 or 2, wherein: a pattern preparation process for a metal film applied to an integrated circuit chip or an actuator.
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| CN106169416A (en) * | 2016-08-29 | 2016-11-30 | 复旦大学 | A kind of manufacture method of extreme ultraviolet mask |
| CN108284661A (en) * | 2018-01-31 | 2018-07-17 | 武汉华星光电半导体显示技术有限公司 | The peel-off device and its stripping means of polaroid |
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| CA2246084A1 (en) * | 1998-08-28 | 2000-02-28 | Todd William Simpson | Method of patterning semiconductor materials and other brittle materials |
| US7461445B2 (en) * | 2005-01-31 | 2008-12-09 | Hitachi Global Storage Technologies Netherlands, Bv | Method of manufacturing a magnetic head with a deposited shield |
| CN102184882A (en) * | 2011-04-07 | 2011-09-14 | 中国科学院微电子研究所 | Method for forming composite functional material structure |
| CN102347219A (en) * | 2011-09-23 | 2012-02-08 | 中国科学院微电子研究所 | Method for forming composite functional material structure |
| CN103236468B (en) * | 2013-04-16 | 2016-04-27 | 中国电子科技集团公司第十一研究所 | A kind of lithographic method for the low damage high uniformity of mercury cadmium telluride |
| CN111627811A (en) * | 2020-06-10 | 2020-09-04 | 电子科技大学 | Lithium tantalate micro-patterning method based on reactive ion etching |
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| CN106169416A (en) * | 2016-08-29 | 2016-11-30 | 复旦大学 | A kind of manufacture method of extreme ultraviolet mask |
| CN108284661A (en) * | 2018-01-31 | 2018-07-17 | 武汉华星光电半导体显示技术有限公司 | The peel-off device and its stripping means of polaroid |
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