CN112993097B - Preparation method of light emitting diode epitaxial wafer - Google Patents

Preparation method of light emitting diode epitaxial wafer Download PDF

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CN112993097B
CN112993097B CN202110084111.5A CN202110084111A CN112993097B CN 112993097 B CN112993097 B CN 112993097B CN 202110084111 A CN202110084111 A CN 202110084111A CN 112993097 B CN112993097 B CN 112993097B
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layer
aggan
insertion layer
quantum well
emitting diode
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CN112993097A (en
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曹阳
王群
梅劲
陆香花
吕蒙普
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HC Semitek Suzhou Co Ltd
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HC Semitek Suzhou Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

The disclosure provides a preparation method of an epitaxial wafer of a light-emitting diode, belonging to the field of manufacturing of light-emitting diodes. The first AgGaN insertion layer is inserted between the n-type GaN layer and the multi-quantum well layer, AgGa metal compounds in the first AgGaN insertion layer can effectively capture electrons, and on the premise that the first AgGaN insertion layer is kept thin, the electrons are effectively blocked and the overall cost is reasonably controlled. The second AgGaN insertion layer positioned on the multiple quantum well layer can further limit electrons in the multiple quantum well layer, the situation that holes are consumed when current in the multiple quantum well layer overflows into the p-type GaN layer is reduced, the holes have more time to enter the multiple quantum well layer, meanwhile, the situation that the holes are consumed meaninglessly by the overflowed electrons is avoided, the number of the holes entering the multiple quantum well layer is greatly increased, and the light emitting efficiency of the light emitting diode is effectively improved.

Description

Preparation method of light emitting diode epitaxial wafer
Technical Field
The disclosure relates to the field of light emitting diode manufacturing, in particular to a method for preparing a light emitting diode epitaxial wafer.
Background
A light emitting diode is a semiconductor electronic component that can emit light. As a novel high-efficiency, environment-friendly and green solid-state illumination light source, the solid-state illumination light source is rapidly and widely applied, such as traffic signal lamps, automobile interior and exterior lamps, urban landscape illumination, mobile phone backlight sources and the like, and the aim of improving the light emitting efficiency of a chip is continuously pursued by light emitting diodes.
The light emitting diode epitaxial wafer is a basic structure for preparing the light emitting diode, the light emitting diode epitaxial wafer at least comprises a substrate, and an n-type GaN layer, a multi-quantum well layer and a p-type GaN layer which are sequentially stacked on the substrate, and electrons provided by the n-type GaN layer and holes provided by the p-type GaN layer are compounded in the multi-quantum well layer to emit light. However, the migration speed of electrons in the n-type GaN layer is much higher than that of holes in the p-type GaN layer, so that the electrons are easy to migrate too fast, and directly migrate into the p-type GaN layer to be non-radiatively compounded with the holes. Resulting in a decrease in the number of holes entering the multiple quantum well layer, reducing the light emitting efficiency of the light emitting diode.
Disclosure of Invention
The embodiment of the disclosure provides a preparation method of a light emitting diode epitaxial wafer, which can increase the number of holes entering a multiple quantum well layer so as to improve the light emitting efficiency of the light emitting diode epitaxial wafer. The technical scheme is as follows:
the embodiment of the disclosure provides a preparation method of a light emitting diode epitaxial wafer, wherein the light emitting diode epitaxial wafer comprises a substrate, and an n-type GaN layer, a first AgGaN insertion layer, a multi-quantum well layer, a second AgGaN insertion layer and a p-type GaN layer which are sequentially stacked on the substrate.
Optionally, the thickness of the first AgGaN insertion layer is 20-50 nm.
Optionally, the ratio of the thickness of the second AgGaN insertion layer to the thickness of the first AgGaN insertion layer is 1:1 to 1: 2.
Optionally, the thickness of the second AgGaN insertion layer is 20-50 nm.
The embodiment of the disclosure provides a preparation method of a light-emitting diode epitaxial wafer, which comprises the following steps:
providing a substrate;
growing an n-type GaN layer on the substrate;
growing a first AgGaN insertion layer on the n-type GaN layer;
growing a multi-quantum well layer on the first AgGaN insertion layer;
growing a second AgGaN insertion layer on the multi-quantum well layer;
and growing a p-type GaN layer on the second AgGaN insertion layer.
Optionally, the growth conditions of the first AgGaN insertion layer are the same as the growth conditions of the second AgGaN insertion layer.
Optionally, the growing a second AgGaN insertion layer on the multi-quantum well layer includes:
depositing a second Ag film on the multi-quantum well layer;
and introducing a Ga source and ammonia gas into the reaction cavity, and reacting the Ga source, the ammonia gas and the second Ag film until the second AgGaN insertion layer is formed.
Optionally, the second Ag film is grown to a thickness of 20-50 a.
Optionally, a Ga source with the flow rate of 100-200 sccm and ammonia gas with the flow rate of 50-100L are introduced into the reaction cavity, and the Ga source, the ammonia gas and the second Ag film react until the second AgGaN insertion layer is formed.
Optionally, the growth temperature of the second Ag film is 100-300 ℃, and the growth pressure of the second Ag film is 1-5 Pa.
The technical scheme provided by the embodiment of the disclosure has the following beneficial effects:
the first AgGaN insertion layer is inserted between the n-type GaN layer and the multi-quantum well layer, and the AgGa metal compound in the first AgGaN insertion layer can effectively capture electrons and reduce the number of electrons which can enter the first AgGaN insertion layer from the first AgGaN insertion layer. And the first AgGaN insertion layer can realize stable growth on the gallium nitride material, and can effectively block electrons and reasonably control the overall cost on the premise of keeping the first AgGaN insertion layer thin. The second AgGaN insertion layer positioned on the multiple quantum well layer can further limit electrons in the multiple quantum well layer, the situation that holes are consumed when current in the multiple quantum well layer overflows into the p-type GaN layer is reduced, the holes have more time to enter the multiple quantum well layer, meanwhile, the situation that the holes are consumed meaninglessly by the overflowed electrons is avoided, the number of the holes entering the multiple quantum well layer is greatly increased, and the light emitting efficiency of the light emitting diode is effectively improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an epitaxial wafer of a light emitting diode according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of another light emitting diode epitaxial wafer according to an embodiment of the present disclosure;
fig. 3 is a flowchart of a method for manufacturing an epitaxial wafer of a light emitting diode according to an embodiment of the present disclosure;
fig. 4 is a flowchart of another method for manufacturing an epitaxial wafer of a light emitting diode according to an embodiment of the present disclosure;
fig. 5 is a state diagram of a first Ag film provided by an embodiment of the present disclosure.
Detailed Description
To make the objects, technical solutions and advantages of the present disclosure more apparent, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a light emitting diode epitaxial wafer according to an embodiment of the present disclosure, and as can be seen from fig. 1, the embodiment of the present disclosure provides a method for manufacturing a light emitting diode epitaxial wafer, where the light emitting diode epitaxial wafer includes a substrate 1, and an n-type GaN layer 2, a first AgGaN insertion layer 3, a multiple quantum well layer 4, and a p-type GaN layer 6 sequentially stacked on the substrate 1.
The first AgGaN insertion layer 3 is inserted between the n-type GaN layer 2 and the multi-quantum well layer 4, and AgGa metal compounds in the first AgGaN insertion layer 3 can effectively capture electrons, so that the number of electrons entering the first AgGaN insertion layer 3 from the first AgGaN insertion layer 3 is reduced. And the first AgGaN insertion layer 3 can realize stable growth on a gallium nitride material, and can effectively block electrons and reasonably control the overall cost on the premise of keeping the first AgGaN insertion layer 3 thin. The second AgGaN insertion layer 5 positioned on the multiple quantum well layer 4 can further limit electrons in the multiple quantum well layer 4, the situation that current in the multiple quantum well layer 4 overflows to the p-type GaN layer 6 to consume holes is reduced, the holes have more time to enter the multiple quantum well layer 4, meanwhile, the holes are prevented from being consumed meaninglessly by the overflowing electrons, the number of the holes entering the multiple quantum well layer 4 is greatly increased, and the light emitting efficiency of the light emitting diode is effectively improved.
It should be noted that, since the migration velocity of electrons is much greater than that of holes, even in the case where the first AgGaN insertion layer 3 blocks and captures electrons, the number of electrons entering the mqw layer 4 is greater than that of holes, and the case where the number of electrons in the mqw layer 4 is less than that of holes does not occur.
Illustratively, the thickness of the first AgGaN insertion layer 3 is 20-50 nm.
When the thickness of the first AgGaN insertion layer 3 is within the above range, the first AgGaN insertion layer 3 has a sufficient thickness to capture and block electrons, and the first AgGaN insertion layer 3 itself has a good quality, and a good transition from the n-type GaN layer 2 to the multi-quantum well layer 4 can be achieved.
Optionally, the ratio of the thickness of the second AgGaN insertion layer 5 to the thickness of the first AgGaN insertion layer 3 is 1:1 to 1: 2.
When the ratio of the thickness of the first AgGaN insertion layer 3 to the thickness of the second AgGaN insertion layer 5 is within the above range, the first AgGaN insertion layer 3 can capture electrons, the second AgGaN insertion layer 5 can well block the electrons, the thickness of the first AgGaN insertion layer 3 and the thickness of the second AgGaN insertion layer 5 are reasonable, the growth quality of the first AgGaN insertion layer 3 and the second AgGaN insertion layer 5 can be guaranteed while the electrons are effectively blocked, the crystal quality of the multi-quantum well layer 4 directly grown on the first AgGaN insertion layer 3 is good, and the light emitting efficiency of the finally obtained light emitting diode is improved.
Optionally, the thickness of the second AgGaN insertion layer 5 is 20-50 nm.
When the thickness of the second AgGaN insertion layer 5 is within the above range, the second AgGaN insertion layer 5 has a sufficient thickness to capture and block electrons, and the second AgGaN insertion layer 5 itself has a good quality, and can realize a good transition from the n-type GaN layer 2 to the multi-quantum well layer 4.
Fig. 2 is a schematic structural diagram of another light emitting diode epitaxial wafer according to an embodiment of the present disclosure, and as can be seen from fig. 2, in another implementation manner provided by the present disclosure, the light emitting diode epitaxial wafer may include a substrate 1, and a buffer layer 7, an undoped GaN layer 8, an n-type GaN layer 2, a first AgGaN insertion layer 3, a multi-quantum well layer 4, a second AgGaN insertion layer 5, an electron blocking layer 9, a p-type GaN layer 6, and a p-type contact layer 10 grown on the substrate 1.
It should be noted that the structures of the first AgGaN insertion layer 3 and the second AgGaN insertion layer 5 shown in fig. 2 are the same as the structures of the first AgGaN insertion layer 3 and the second AgGaN insertion layer 5 shown in fig. 1, respectively, and therefore, the description thereof is omitted.
Alternatively, the substrate 1 may be a sapphire substrate. Easy to manufacture and obtain.
In other implementations provided by the present disclosure, the substrate 1 may also be one of gallium nitride, sapphire, SiC, Si, AlN, SiO2, or diamond, to which the present disclosure is not limited.
Illustratively, the buffer layer 7 is a GaN nucleation layer. The crystal quality of the epitaxial film grown on the buffer layer 7 can be ensured.
Alternatively, the thickness of the buffer layer 7 may be 10 to 30 nm. The lattice mismatch between the n-type GaN layer and the substrate 1 can be reduced, and the growth quality of the epitaxial layer is ensured.
Illustratively, the thickness of the undoped GaN layer 8 may be 1 to 5 μm. The quality of the obtained light emitting diode epitaxial wafer is good.
Alternatively, the n-type GaN layer 2 may be an n-type GaN layer, the doping element of the n-type GaN layer may be Si, and the doping concentration of the Si element may be 1 × 10 18 ～1×10 19 cm -3 . The overall quality of the n-type GaN layer is better.
Illustratively, the n-type GaN layer may have a thickness of 1 to 5 μm. The obtained n-type GaN layer has good overall quality.
In one implementation provided by the present disclosure, the n-type GaN layer may have a thickness of 2 μm. The present disclosure is not so limited.
Illustratively, the multiple quantum well layer 4 includes InGaN well layers 41 and GaN barrier layers 42 alternately stacked. The normal light emitting of the light emitting diode epitaxial wafer is convenient to realize.
Optionally, the thickness of the InGaN well layer 41 is 2-3 nm, and the thickness of the GaN barrier layer 42 is 9-20 nm. The quality of the MQW layer can be ensured.
Alternatively,the electron blocking layer 9 may be Mg-doped Al y Ga 1-y N layers, wherein y ranges from 0.15 to 0.25. The effect of blocking electrons is better.
Illustratively, the thickness of the electron blocking layer 9 may be 30 to 50 nm.
On the premise of arranging the second AgGaN insertion layer 5, the thickness of the electron blocking layer 9 is set in the range, the thickness of the electron blocking layer is greatly reduced compared with that of the traditional electron blocking layer, the electron blocking effect is good, and the preparation cost required by the light-emitting diode epitaxial wafer is low.
Alternatively, the p-type GaN layer 6 can be a p-type GaN layer, the p-type GaN layer can be doped with Mg, and the thickness of the p-type GaN layer can be 50-80 nm. The obtained p-type GaN layer has good overall quality.
Illustratively, the thickness of the p-type contact layer 10 may be 15 nm.
It should be noted that, in the epitaxial wafer structure shown in fig. 2, compared with the epitaxial wafer structure shown in fig. 1, a buffer layer 7 for relieving lattice mismatch and a non-doped GaN layer 8 are added between the substrate 1 and the n-type GaN layer 2, and an electron blocking layer 9 for blocking electrons from overflowing from the multiple quantum well layer 4 into the p-type GaN layer is added between the second AgGaN insertion layer 5 and the p-type GaN layer. A p-type contact layer 10 is also grown on the p-type GaN layer. The obtained epitaxial wafer has better quality and luminous efficiency.
Fig. 3 is a flowchart of a method for manufacturing an led epitaxial wafer according to an embodiment of the present disclosure, and as shown in fig. 3, the method for manufacturing an led epitaxial wafer may include:
s101: a substrate is provided.
S102: an n-type GaN layer is grown on the substrate.
S103: and growing a first AgGaN insertion layer on the n-type GaN layer.
S104: and growing a multi-quantum well layer on the first AgGaN insertion layer.
S105: and growing a second AgGaN insertion layer on the multi-quantum well layer.
S106: and growing a p-type GaN layer on the second AgGaN insertion layer.
The technical effects corresponding to the method for manufacturing the light emitting diode epitaxial wafer shown in fig. 3 can refer to the technical effects corresponding to the structure of the light emitting diode epitaxial wafer shown in fig. 1, and therefore, the details are not repeated herein. The light emitting diode epitaxial wafer prepared in fig. 3 can also be seen in fig. 1.
Fig. 4 is a flowchart of a method for manufacturing an led epitaxial wafer according to an embodiment of the present disclosure, and as shown in fig. 4, the method for manufacturing an led epitaxial wafer may include:
s201: a substrate is provided.
Alternatively, the substrate may be a sapphire substrate.
Step S201 may include: and carrying out high-temperature heat treatment on the substrate for 10-15 minutes in a hydrogen atmosphere at the temperature of 1000-1200 ℃ in the reaction chamber. Most of the impurities present on the surface of the substrate can be removed.
In one implementation provided by the present disclosure, the processing time of the substrate may be 8 min.
S202: a buffer layer is grown on a substrate.
Optionally, the buffer layer includes a GaN nucleation layer, and the growth temperature of the GaN nucleation layer is 400-600 ℃, and the growth pressure is 400-600 Torr. The GaN nucleating layer can be ensured to have better growth quality.
Exemplarily, step S202 further includes: and annealing the GaN buffer layer for 5-10 minutes at the temperature of 1000-1200 ℃. The stress of the GaN buffer layer can be effectively released, and the growth quality of the GaN nucleating layer is improved.
S203: and growing an undoped GaN layer on the buffer layer.
Optionally, the growth temperature of the non-doped GaN layer is 1000-1100 ℃, and the growth pressure is 100-500 Torr. The non-doped GaN layer can be ensured to have better growth quality.
S204: and growing an n-type GaN layer on the undoped GaN layer.
Optionally, the doping element in the n-type GaN layer is Si doped. Easy preparation and acquisition.
Optionally, the growth temperature of the n-type GaN layer is 1000-1200 ℃, and the pressure is 100-500 torr. The obtained n-type GaN layer has better quality, and the crystal quality of the finally obtained light-emitting diode can be improved.
Illustratively, the n-type GaN layer is grown to a thickness of between 1 and 5 microns. The crystal quality of the finally obtained light emitting diode can be improved.
Illustratively, in the n-type GaN layer, the doping concentration of Si is 10 18 cm -3 ～10 19 cm -3 In the meantime.
S205: and growing a first AgGaN insertion layer on the n-type GaN layer.
Step S205 may include: depositing a first Ag film on the n-type GaN layer; and introducing a Ga source and ammonia gas into the reaction cavity, and reacting the Ga source, the ammonia gas and the first Ag film until a first AgGaN insertion layer is formed.
The first Ag film is firstly deposited on the n-type GaN layer, the layered first Ag film can effectively capture electrons, the first Ag film reacts with a Ga source which is introduced subsequently and ammonia gas, and AgGaN reactants are generated mainly by the reaction of one side of the first Ag film far away from the substrate, so that transition and connection with a subsequent gallium nitride material are realized while the blocking effect of electrons is ensured.
Illustratively, the first Ag film may be obtained by evaporation or magnetron sputtering. The first Ag film with better surface quality can be obtained.
Illustratively, when the first Ag film is obtained by magnetron sputtering, the power for sputtering the first Ag film can be 10-50W. The first Ag film with good quality and compact internal structure can be obtained, and the quality of the finally obtained first AgGaN insertion layer can be ensured.
Optionally, the first Ag film is grown to a thickness of 20-50 nm.
When the growth thickness of the first Ag film is within the range, the effect of capturing electrons by the first Ag film can be better, and the preparation cost of the light-emitting diode epitaxial wafer cannot be excessively increased. And the growth quality of the finally obtained first AgGaN insertion layer is ensured.
For ease of understanding, fig. 5 may be provided herein, and fig. 5 is a schematic view of a state of the first Ag film provided in the embodiment of the present disclosure, which is shown with reference to fig. 5, when a first Ag film 100 is grown on the n-type GaN layer 2.
Optionally, the growth temperature of the first Ag film is 100-300 ℃, and the growth pressure of the first Ag film is 1-5 Pa.
When the growth temperature and the growth pressure of the first Ag film are within the above ranges, the first Ag film with better quality and more reasonable density can be obtained, and the first Ag film can be ensured to perform good reaction with a Ga source and ammonia gas which are introduced subsequently.
Illustratively, under the condition that the temperature of the reaction cavity is 800-900 ℃, a Ga source and ammonia gas are introduced into the reaction cavity, and the Ga source, the ammonia gas and the first Ag film react until a first AgGaN insertion layer is formed.
Under the temperature condition, the Ga source and ammonia gas introduced into the reaction cavity can perform good reaction with the first Ag film to generate a first AgGaN insertion layer with better quality.
Illustratively, under the condition that the pressure in the reaction cavity is 200-500 torr, introducing a Ga source and ammonia gas into the reaction cavity, and reacting the Ga source, the ammonia gas and the first Ag film until a first AgGaN insertion layer is formed.
Under the temperature condition, the Ga source and ammonia gas introduced into the reaction cavity can perform good reaction with the first Ag film to generate a first AgGaN insertion layer with better quality.
Optionally, a Ga source with a flow rate of 100-200 sccm and ammonia gas with a flow rate of 50-100L are introduced into the reaction cavity, and the Ga source, the ammonia gas and the first Ag film react until a first AgGaN insertion layer is formed.
The Ga source flow and the ammonia gas flow which are led into the reaction cavity are respectively in the ranges, so that the first AgGaN insertion layer with better quality can be obtained, and good transition from the n-type GaN layer to the multi-quantum well layer is realized.
S206: and growing a multi-quantum well layer on the first AgGaN insertion layer.
Alternatively, the multiple quantum well layer may be a GaN/InGaN multiple quantum well layer including a plurality of alternately stacked GaN barrier layers and InGaN well layers.
Illustratively, the growth temperature of the GaN barrier layer ranges from 850 ℃ to 959 ℃, and the pressure ranges from 100Torr to 500 Torr; the growth temperature of the InGaN well layer is 720-829 ℃, and the growth pressure is between 100Torr and 200 Torr. The GaN/InGaN multi-quantum well layer with better quality can be obtained.
Optionally, the thickness of the GaN barrier layer is between 8nm and 20 nm. The obtained GaN/InGaN multi-quantum well layer has good quality and reasonable cost.
S207: and growing a second AgGaN insertion layer on the multi-quantum well layer.
Optionally, the growth conditions of the first AgGaN insertion layer are the same as the growth conditions of the second AgGaN insertion layer.
The growth conditions of the first AgGaN insertion layer are the same as those of the second AgGaN insertion layer, so that the growth control of the second AgGaN insertion layer can be facilitated, and the cost required by the preparation of the light-emitting diode epitaxial wafer can be reduced on the basis of ensuring the growth quality of the first AgGaN insertion layer and the second AgGaN insertion layer.
It should be noted that the growth conditions of the first AgGaN insertion layer and the growth conditions of the second AgGaN insertion layer both include growth temperature, growth pressure, growth time, and flow rate introduced into the reaction chamber.
In other implementations provided by the present disclosure, the growth conditions of the first AgGaN insertion layer and the growth conditions of the second AgGaN insertion layer may also be different, which is not limited by the present disclosure.
As described further below, the step S207 may include: depositing a second Ag film on the multi-quantum well layer; and introducing a Ga source and ammonia gas into the reaction cavity, and reacting the Ga source, the ammonia gas and the second Ag film until a second AgGaN insertion layer is formed.
And depositing a layer of second Ag film on the multi-quantum well layer, wherein the layered second Ag film can effectively capture electrons, the second Ag film reacts with a subsequently introduced Ga source and ammonia gas, and AgGaN reactant is mainly generated on one side of the second Ag film far away from the substrate in a reaction manner, so that transition and connection with a subsequent gallium nitride material are realized while the blocking effect of the electrons is ensured.
Illustratively, the second Ag film may be obtained by evaporation or magnetron sputtering. The second Ag film with better surface quality can be obtained.
Illustratively, when the second Ag film is obtained by magnetron sputtering, the power for sputtering the second Ag film can be 10-50W. The second Ag film with good quality and compact internal structure can be obtained, and the quality of the finally obtained second AgGaN insertion layer can be ensured.
Optionally, the second Ag film is grown to a thickness of 20-50 nm.
When the growth thickness of the second Ag film is in the range, the second Ag film can be ensured to have a good electron capturing effect, and the preparation cost of the light-emitting diode epitaxial wafer cannot be excessively increased. And the growth quality of the finally obtained second AgGaN insertion layer is ensured.
Optionally, the growth temperature of the second Ag film is 100-300 ℃, and the growth pressure of the second Ag film is 1-5 Pa.
When the growth temperature and the growth pressure of the second Ag film are within the above ranges, the second Ag film with better quality and more reasonable density can be obtained, and the second Ag film can be ensured to have good reaction with the subsequently introduced Ga source and ammonia gas. The structure of the second Ag film may refer to the structure of the first Ag film shown in fig. 5.
Illustratively, under the condition that the temperature of the reaction cavity is 800-900 ℃, a Ga source and ammonia gas are introduced into the reaction cavity, and the Ga source, the ammonia gas and the second Ag film react until a second AgGaN insertion layer is formed.
Under the condition of the temperature, the Ga source and the ammonia gas introduced into the reaction cavity can perform good reaction with the second Ag film to generate a second AgGaN insertion layer with better quality.
Illustratively, under the condition that the pressure in the reaction cavity is 200-500 torr, introducing a Ga source and ammonia gas into the reaction cavity, and reacting the Ga source, the ammonia gas and the second Ag film until a second AgGaN insertion layer is formed.
Under the condition of the temperature, the Ga source and the ammonia gas introduced into the reaction cavity can perform good reaction with the second Ag film to generate a second AgGaN insertion layer with better quality.
Optionally, a Ga source with the flow rate of 100-200 sccm and ammonia gas with the flow rate of 50-100L are introduced into the reaction cavity, and the Ga source, the ammonia gas and the second Ag film react until a second AgGaN insertion layer is formed.
The flow of the Ga source and the flow of ammonia gas introduced into the reaction cavity are respectively in the above ranges, so that the second AgGaN insertion layer with better quality can be obtained, and good transition from the n-type GaN layer to the multi-quantum well layer is realized.
S208: and growing an electron blocking layer on the second AgGaN insertion layer.
Alternatively, the electron blocking layer may be p-type Al y Ga 1-y N layer (0.2)<y<0.5)。
Alternatively, p-type Al y Ga 1-y The growth temperature of the N layer is 900-1050 ℃, and the pressure is 50-200 torr. The obtained p-type Al y Ga 1-y The quality of the N layer is better, and the crystal quality of the finally obtained light-emitting diode can be improved.
S209: and growing a p-type GaN layer on the electron blocking layer.
Optionally, the growth temperature of the p-type GaN layer is 850-1050 ℃, and the pressure is 100-200 torr. The obtained p-type GaN layer has better quality, and the crystal quality of the finally obtained light-emitting diode can be improved.
Illustratively, the p-type GaN layer is grown to a thickness between 100 and 300 nanometers. The crystal quality of the finally obtained light emitting diode can be improved.
S210: and growing a p-type contact layer on the p-type GaN layer to obtain the light emitting diode epitaxial wafer.
Alternatively, the p-type contact layer may be made of p-type GaN material.
Optionally, the growth temperature of the p-type contact layer is 850-1050 ℃, and the pressure is 100-600 torr. The quality of the obtained p-type contact layer is better.
Illustratively, the p-type contact layer is grown to a thickness of between 10 and 300 nanometers. The crystal quality of the finally obtained light emitting diode can be improved.
S211: and annealing the light emitting diode epitaxial wafer.
Exemplarily, the step S211 includes: annealing the light-emitting diode epitaxial wafer for 5 to 15 minutes at the temperature of 650 to 850 ℃; and reducing the temperature of the epitaxy of the light emitting diode to room temperature to finish the epitaxial growth. The stress in the light-emitting diode epitaxial wafer can be released, and the quality of the light-emitting diode epitaxial wafer is improved.
It should be noted that, in the embodiments of the present disclosure, the method is adoptedVeecoK 465i or C4 or RB MOCVD (Metal Organic Chemical Vapor Deposition) equipment realizes the growth method of the LED. By using high purity H 2 (Hydrogen) or high purity N 2 (Nitrogen) or high purity H 2 And high purity N 2 The mixed gas of (2) is used as a carrier gas, high-purity NH 3 As ammonia gas, trimethyl gallium (TMGa) and triethyl gallium (TEGa) as gallium sources, trimethyl indium (TMIn) as indium sources, silane (SiH4) as an N-type dopant, trimethyl aluminum (TMAl) as an aluminum source, and magnesium dicylocene (CP) 2 Mg) as a P-type dopant.
Although the present disclosure has been described with reference to specific embodiments, it will be understood by those skilled in the art that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure.

Claims (6)

1. A light emitting diode epitaxial wafer is characterized by comprising a substrate, and an n-type GaN layer, a first AgGaN insertion layer, a multi-quantum well layer, a second AgGaN insertion layer, an electronic barrier layer and a p-type GaN layer which are sequentially stacked on the substrate, wherein the thickness of the first AgGaN insertion layer is 20-50 nm, the ratio of the thickness of the second AgGaN insertion layer to the thickness of the first AgGaN insertion layer is 1: 1-1: 2, the thickness of the second AgGaN insertion layer is 20-50 nm,
the electron barrier layer is Mg-doped Al y Ga 1-y The range of y is 0.15-0.25, and the thickness of the electron blocking layer is 30-50 nm;
and the second AgGaN insertion layer is formed by depositing a second Ag film on the multi-quantum well layer, introducing a Ga source and ammonia gas into the reaction cavity, and reacting the Ga source, the ammonia gas and the second Ag film until the second AgGaN insertion layer is formed.
2. A preparation method of a light emitting diode epitaxial wafer is characterized by comprising the following steps:
providing a substrate;
growing an n-type GaN layer on the substrate;
growing a first AgGaN insertion layer on the n-type GaN layer;
growing a multi-quantum well layer on the first AgGaN insertion layer;
growing a second AgGaN insertion layer on the multi-quantum well layer, depositing a second Ag film on the multi-quantum well layer, introducing a Ga source and ammonia gas into a reaction cavity, reacting the Ga source, the ammonia gas and the second Ag film until a second AgGaN insertion layer is formed, wherein the thickness of the first AgGaN insertion layer is 20-50 nm, the ratio of the thickness of the second AgGaN insertion layer to the thickness of the first AgGaN insertion layer is 1: 1-1: 2, and the thickness of the second AgGaN insertion layer is 20-50 nm;
growing an electron blocking layer on the second AgGaN insertion layer, wherein the electron blocking layer is Mg-doped Al y Ga 1-y The range of y is 0.15-0.25, and the thickness of the electron blocking layer is 30-50 nm;
and growing a p-type GaN layer on the electron barrier layer.
3. The method for preparing the light-emitting diode epitaxial wafer as claimed in claim 2, wherein the growth conditions of the first AgGaN insertion layer are the same as those of the second AgGaN insertion layer.
4. The method for preparing the light-emitting diode epitaxial wafer according to claim 2, wherein the second Ag film is grown to a thickness of 20-50 mm.
5. The method for preparing the light-emitting diode epitaxial wafer as claimed in claim 2, wherein a Ga source with a flow rate of 100-200 sccm and ammonia gas with a flow rate of 50-100L are introduced into the reaction chamber, and the Ga source, the ammonia gas and the second Ag film react until the second AgGaN insertion layer is formed.
6. The method for preparing the light-emitting diode epitaxial wafer according to any one of claims 2 to 5, wherein the growth temperature of the second Ag film is 100to 300 ℃, and the growth pressure of the second Ag film is 1 to 5 Pa.
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