CN112979335B - 氮化铝多孔隙原料的制备方法 - Google Patents
氮化铝多孔隙原料的制备方法 Download PDFInfo
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- CN112979335B CN112979335B CN202110170597.4A CN202110170597A CN112979335B CN 112979335 B CN112979335 B CN 112979335B CN 202110170597 A CN202110170597 A CN 202110170597A CN 112979335 B CN112979335 B CN 112979335B
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 57
- 239000002994 raw material Substances 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000000843 powder Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 31
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 15
- 238000004321 preservation Methods 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 238000001816 cooling Methods 0.000 claims abstract description 8
- 238000005553 drilling Methods 0.000 claims abstract description 4
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 12
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- 230000006698 induction Effects 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims description 3
- 238000009966 trimming Methods 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 15
- 239000000919 ceramic Substances 0.000 abstract description 10
- 239000011148 porous material Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B38/00—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
- C04B38/0003—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof containing continuous channels, e.g. of the "dead-end" type or obtained by pushing bars in the green ceramic product
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- C—CHEMISTRY; METALLURGY
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- C04B2235/602—Making the green bodies or pre-forms by moulding
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- C04B2235/612—Machining
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6562—Heating rate
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6567—Treatment time
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6581—Total pressure below 1 atmosphere, e.g. vacuum
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
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CN202110170597.4A CN112979335B (zh) | 2021-02-08 | 2021-02-08 | 氮化铝多孔隙原料的制备方法 |
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CN202110170597.4A CN112979335B (zh) | 2021-02-08 | 2021-02-08 | 氮化铝多孔隙原料的制备方法 |
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CN112979335A CN112979335A (zh) | 2021-06-18 |
CN112979335B true CN112979335B (zh) | 2022-07-01 |
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Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4652411A (en) * | 1984-05-23 | 1987-03-24 | The United States Of America As Represented By The United States Department Of Energy | Method of preparing thin porous sheets of ceramic material |
JPH09139443A (ja) * | 1995-09-19 | 1997-05-27 | Internatl Business Mach Corp <Ibm> | キャビティを有するセラミック積層製品の形成方法およびそのための装置 |
JP2000072551A (ja) * | 1998-06-15 | 2000-03-07 | Nkk Corp | 窒化アルミニウム耐火物、溶融金属輸送管、およびハニカム構造蓄熱媒体 |
CN1597624A (zh) * | 2003-08-08 | 2005-03-23 | 株式会社堤土乐 | 多孔质烧结铺路材料及其制造方法 |
JP2006117449A (ja) * | 2004-10-20 | 2006-05-11 | Sumitomo Electric Ind Ltd | 窒化アルミニウム焼結体 |
AU2007316209A1 (en) * | 2006-10-29 | 2008-05-08 | Messier-Bugatti-Dowty | Method of densifying porous articles |
CN101454487A (zh) * | 2006-03-30 | 2009-06-10 | 晶体公司 | 氮化铝块状晶体的可控掺杂方法 |
CN103643295A (zh) * | 2013-12-04 | 2014-03-19 | 北京华进创威电子有限公司 | 一种气相法生长氮化铝晶体用原料的制备方法 |
CN106565258A (zh) * | 2016-10-08 | 2017-04-19 | 江苏省陶瓷研究所有限公司 | 一种高孔隙率多孔陶瓷管的缠绕制备方法 |
CN107162600A (zh) * | 2017-07-14 | 2017-09-15 | 河北利福光电技术有限公司 | 一种用于陶瓷基板的高纯度氮化铝粉末材料及其制备方法 |
CN108147821A (zh) * | 2017-12-21 | 2018-06-12 | 北京华进创威电子有限公司 | 一种高纯多孔氮化铝雏晶料源制备方法 |
CN109721344A (zh) * | 2019-01-29 | 2019-05-07 | 东莞信柏结构陶瓷股份有限公司 | 多孔陶瓷材料、多孔陶瓷及其制备方法 |
CN111663185A (zh) * | 2020-06-22 | 2020-09-15 | 哈尔滨化兴软控科技有限公司 | 一种用于制备pvt法氮化铝单晶生长用粉料的装置及方法 |
CN112210833A (zh) * | 2020-10-13 | 2021-01-12 | 哈尔滨化兴软控科技有限公司 | 一种提高氮化铝长晶原料纯度的装置及方法 |
CN112321286A (zh) * | 2020-11-04 | 2021-02-05 | 深圳市博迪科技开发有限公司 | 一种多层多孔陶瓷材料及其制备方法 |
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2021
- 2021-02-08 CN CN202110170597.4A patent/CN112979335B/zh active Active
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4652411A (en) * | 1984-05-23 | 1987-03-24 | The United States Of America As Represented By The United States Department Of Energy | Method of preparing thin porous sheets of ceramic material |
JPH09139443A (ja) * | 1995-09-19 | 1997-05-27 | Internatl Business Mach Corp <Ibm> | キャビティを有するセラミック積層製品の形成方法およびそのための装置 |
JP2000072551A (ja) * | 1998-06-15 | 2000-03-07 | Nkk Corp | 窒化アルミニウム耐火物、溶融金属輸送管、およびハニカム構造蓄熱媒体 |
CN1597624A (zh) * | 2003-08-08 | 2005-03-23 | 株式会社堤土乐 | 多孔质烧结铺路材料及其制造方法 |
JP2006117449A (ja) * | 2004-10-20 | 2006-05-11 | Sumitomo Electric Ind Ltd | 窒化アルミニウム焼結体 |
CN101454487A (zh) * | 2006-03-30 | 2009-06-10 | 晶体公司 | 氮化铝块状晶体的可控掺杂方法 |
AU2007316209A1 (en) * | 2006-10-29 | 2008-05-08 | Messier-Bugatti-Dowty | Method of densifying porous articles |
CN103643295A (zh) * | 2013-12-04 | 2014-03-19 | 北京华进创威电子有限公司 | 一种气相法生长氮化铝晶体用原料的制备方法 |
CN106565258A (zh) * | 2016-10-08 | 2017-04-19 | 江苏省陶瓷研究所有限公司 | 一种高孔隙率多孔陶瓷管的缠绕制备方法 |
CN107162600A (zh) * | 2017-07-14 | 2017-09-15 | 河北利福光电技术有限公司 | 一种用于陶瓷基板的高纯度氮化铝粉末材料及其制备方法 |
CN108147821A (zh) * | 2017-12-21 | 2018-06-12 | 北京华进创威电子有限公司 | 一种高纯多孔氮化铝雏晶料源制备方法 |
CN109721344A (zh) * | 2019-01-29 | 2019-05-07 | 东莞信柏结构陶瓷股份有限公司 | 多孔陶瓷材料、多孔陶瓷及其制备方法 |
CN111663185A (zh) * | 2020-06-22 | 2020-09-15 | 哈尔滨化兴软控科技有限公司 | 一种用于制备pvt法氮化铝单晶生长用粉料的装置及方法 |
CN112210833A (zh) * | 2020-10-13 | 2021-01-12 | 哈尔滨化兴软控科技有限公司 | 一种提高氮化铝长晶原料纯度的装置及方法 |
CN112321286A (zh) * | 2020-11-04 | 2021-02-05 | 深圳市博迪科技开发有限公司 | 一种多层多孔陶瓷材料及其制备方法 |
Non-Patent Citations (6)
Title |
---|
"Porous AlN ceramic substrates by reaction sintering";F.Y.C. Boey等;《Journal of Materials Processing Technology》;20031231;第413-419页 * |
"低温条件下单晶氮化铝纳米线生长机理的研究";吕惠民等;《物理学报》;20070531;第2808-2812页 * |
"多层共烧氮化铝陶瓷金属化工艺研究";夏庆水等;《电子与封装》;20091130;第34-36页 * |
"定向多孔陶瓷孔隙的形成及控制";李利娟等;《万方知识平台》;20101222;第1-48页 * |
"氮化硅基多孔陶瓷的孔隙结构控制";陈斐等;《稀有金属材料与工程》;20110630;第567-570页 * |
"氮化铝粉末的制备研究";姜珩;《中国优秀硕士学位论文全文数据库 (工程科技Ⅰ辑)》;20130131;B020-342 * |
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Effective date of registration: 20231110 Address after: Building 3 and Building 4, No. 3088 Zhigu Fifth Street, Songbei District, Harbin City, Heilongjiang Province, 150000 Patentee after: Harbin Keyou Semiconductor Industry Equipment and Technology Research Institute Co.,Ltd. Address before: Room 302-2, building 16 (No. 1616, Chuangxin Road), Harbin Institute of technology coastal creative technology port and Internet of things technology R & D center, high tech Industrial Development Zone, Harbin, Heilongjiang Province Patentee before: Harbin Huaxing Soft Control Technology Co.,Ltd. |
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