CN108231436B - Preparation method of micro capacitor - Google Patents
Preparation method of micro capacitor Download PDFInfo
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- CN108231436B CN108231436B CN201711495041.2A CN201711495041A CN108231436B CN 108231436 B CN108231436 B CN 108231436B CN 201711495041 A CN201711495041 A CN 201711495041A CN 108231436 B CN108231436 B CN 108231436B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
- H01G13/003—Apparatus or processes for encapsulating capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
- H01G13/006—Apparatus or processes for applying terminals
Abstract
The invention relates to a micro-capacitor preparation method, which comprises the following steps: (1) designing a micro-capacitor structure and a corresponding barrier film pattern, and guiding the barrier film pattern into a computer of a micro-processing platform; (2) manufacturing a sample to be etched, placing the sample at a position to be etched of a micro-processing platform, and carrying out negative photoetching; (3) cleaning the processed sample for one time to remove the uncured photoresist; (4) packaging the sample after primary cleaning, and performing primary film coating; (5) cleaning the sample subjected to primary film coating for the second time to remove the hardened photoresist film-blocking pattern, so as to obtain a micro-capacitance pattern; (6) and manufacturing a lead on the micro-capacitance pattern obtained in the above step. Compared with the existing preparation method of the micro capacitor, the invention does not need to prepare a specific mask, has simple manufacture, short manufacture period and low manufacture cost, and adopts femtosecond laser two-photon 3D direct writing of the barrier film pattern, so that the size of the micro capacitor is flexible and variable.
Description
Technical Field
The invention relates to the technical field of micro-nano processing, in particular to a micro-capacitor preparation method.
Background
In recent years, micro capacitors have been widely used in the fields of microelectronic device processing and development, and the line width size thereof is mainly in two levels of micron and nanometer. For example, chinese patent No. ZL200310112933.1 (No. CN1635820A) discloses a micro-capacitive microphone system and a method for manufacturing the same; the Chinese patent with patent number ZL201210466254.3 (the publication number is CN103822680A) discloses a micro-capacitance water meter.
In the prior art, the micro capacitor is generally prepared by adopting a mask and a film coating method through a specific mask, but the mask is high in manufacturing cost and troublesome in preparation process, and meanwhile, the diversification of the micro capacitor structure is also limited due to the problem of the mask.
Disclosure of Invention
The first technical problem to be solved by the present invention is to provide a simple and low-cost method for preparing a micro capacitor in view of the prior art.
The second technical problem to be solved by the invention is to provide a method for preparing a micro capacitor with flexible and variable micro capacitor size aiming at the prior art.
The technical scheme adopted by the invention for solving the technical problems is as follows: the preparation method of the micro capacitor is characterized by comprising the following steps:
(1) designing a micro-capacitor structure and a barrier film pattern, and guiding the barrier film pattern into a computer of a micro-processing platform;
(2) manufacturing a sample to be etched, placing the sample at a position to be etched of a micro-processing platform, and carrying out negative photoetching;
(3) cleaning the processed sample for one time to remove the uncured photoresist;
(4) packaging the sample after primary cleaning, and performing primary film coating;
(5) cleaning the sample subjected to primary film coating for the second time to remove the hardened photoresist film-blocking pattern, so as to obtain a micro-capacitance pattern;
(6) and manufacturing a lead on the micro-capacitance pattern obtained in the above step.
Preferably, the micro-capacitor structure is an interdigital micro-capacitor structure. The interdigital micro-capacitor structure has the advantage of good positive and negative charge conduction performance, and can increase the capacitance value under the condition of not reducing the electrode interval.
Preferably, the micro-machining platform is a femtosecond laser two-photon micro-machining platform. The femtosecond laser two-photon micromachining is to induce the material to locally generate two-photon absorption by femtosecond laser, to initiate the processes of photoreduction, photopolymerization, photodissociation and the like, to selectively generate the process in a certain range by using a three-dimensional control system, and then to obtain a three-dimensional structure by some subsequent processing processes.
Preferably, the barrier film pattern is a three-dimensional pattern. Thus, the barrier film pattern can be more easily fixed on the glass slide and is not easily deformed.
Preferably, in the step (2), the sample is prepared as follows: and (3) sticking an adhesive tape with frosted characteristics on the middle part of the glass slide, then dripping photoresist, and finally covering a cover glass. The method specifically comprises the following steps: attaching two adhesive tapes with frosted characteristics to the middle part of the glass slide (the distance of about 34 glass slide widths), wherein the interval between the two adhesive tapes is 1-1.5cm, dripping a proper amount of ultraviolet photoresist at the blank between the two adhesive tapes, slightly covering the ultraviolet photoresist with a cover glass to ensure that the photoresist is uniformly spread along with the cover glass and bubbles are avoided as much as possible, thereby obtaining the required sample to be engraved
Preferably, in the step (4), a magnetron sputtering method is adopted for primary coating.
Preferably, the thickness of the primary plating film is 50 nm.
Preferably, in the step (6), a secondary coating connection stitch method is adopted to manufacture a lead on the micro-capacitance pattern, wherein the secondary coating adopts a magnetron sputtering method. The method specifically comprises the following steps: and adhering the pin to one end of the microelectrode on the glass slide by using the AB glue, ensuring that one side of the pin faces upwards and is not covered by the AB glue, so that the upward side of the pin can be connected with the AB glue after secondary film coating, and the AB glue is in a slope shape and is connected with one end of the microelectrode, and finally achieving the purpose of connecting the pin and the micro-capacitor polar plate. The lead wires made by this method can be contacted more firmly and have smaller resistance.
Compared with the prior art, the invention has the advantages that: the method combines the femtosecond laser two-photon 3D direct writing and magnetron sputtering coating to manufacture the micro capacitor, compared with the existing preparation method of the micro capacitor, the method does not need to prepare a specific mask, has simple manufacture, short manufacture period and low manufacture cost, and adopts the femtosecond laser two-photon 3D direct writing of the film blocking pattern to ensure that the size of the micro capacitor is flexible and variable.
Drawings
FIG. 1 is a schematic diagram of a micro capacitor design structure according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a design of a mask pattern on the drawing software according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a design model of a mask pattern according to an embodiment of the present invention;
FIG. 4 is a schematic illustration of sample preparation prior to photolithography in an embodiment of the present invention;
FIG. 5 is a schematic illustration of sample preparation after photolithography in an embodiment of the present invention;
FIG. 6 is a schematic diagram of a sample after a mask package according to an embodiment of the present invention;
FIG. 7 is a schematic view of a sample after one washing in an example of the present invention;
fig. 8 is a schematic diagram of a finished product of the micro capacitor in the embodiment of the invention.
Detailed Description
The invention is described in further detail below with reference to the accompanying examples.
The main manufacturing process of the micro capacitor in this embodiment is as follows: the design of the micro-capacitor structure, the manufacture of a film blocking pattern, the manufacture of the micro-capacitor by primary film coating, the encapsulation of the lead of the micro-capacitor to form a micro-capacitor sample and the secondary film coating connecting pin. The micro capacitor manufactured in this example has a length of 5000 μm and a width of 20 μm.
The main experimental equipment and materials used in this example: the device comprises a femtosecond laser two-photon micromachining platform, laser light source equipment, an optical microscope, a lifting table, a horizontal support, an aperture diaphragm, a reflector, a light receiving screen, a glass slide, a cover glass, epoxy resin glue, a wire and the like.
The method comprises the following specific steps:
(1) first, by theoretical analysis, according to the formula
An interdigitated micro-capacitor structure is presented (as shown in figure 1). The structure has better performance of conducting positive and negative charges, and is equivalent to increase the capacitance value under the condition of not reducing the electrode interval. By designing the film blocking pattern (as shown in fig. 2 and 3) with the drawing software (the drawing software used in the present invention is the software carried by the laser two-photon micromachining platform), it can be seen that the film blocking pattern is designed into a solid pattern in this embodiment, so that the film blocking pattern can be fixed on the glass slide more easily and is not easy to deform during the manufacturing process. And guiding the designed barrier film pattern into a computer for controlling the micro-processing platform.
(2) Then, a sample to be etched is manufactured, and the steps are as follows: preparing glass slide, cover glass, ultraviolet photoresist and frosted special materialThe adhesive tape of (1). First in the middle part of the slide (approximately)
The distance of the width of the glass slide) is pasted with two adhesive tapes with frosted characteristics, the distance between the two adhesive tapes is 1-1.5cm, a proper amount of ultraviolet photoresist is dripped in the blank between the two adhesive tapes, the cover glass is lightly covered on the ultraviolet photoresist, so that the photoresist is uniformly spread along with the cover glass, bubbles are avoided as much as possible (as shown in figure 4), and a required sample to be engraved is obtained. And placing the prepared sample at a position to be photoetched of the micro-processing platform, and processing and etching by using a photoetching method.
(3) The finished microcapacitor pattern was then washed in absolute ethanol once to leave the un-polymerized uv photoresist from the slide substrate with the flow of absolute ethanol and to firmly adhere the polymerized hardened uv photoresist to the slide substrate, thus leaving the patterned microcapacitor sample after washing (see fig. 5).
(4) Followed by encapsulation (as shown in fig. 6). The method adopted by the packaging in the embodiment is a mask method, which specifically comprises the following steps: and covering the processed mask plate on the glass slide sample after the primary cleaning, and supporting the glass slide and the mask plate by using a special plastic adhesive tape to prevent the mask plate from contacting with a film blocking pattern made of photoresist in the mask process.
(5) And performing primary coating on the packaged sample, wherein the primary coating is magnetron sputtering coating, the thickness of the coating is controllable, and the coating thickness is 50 nm.
(6) The mask plate on the coated sample is removed (as shown in fig. 7), and a second cleaning is performed with NMP photoresist removing liquid to remove the hardened photoresist and the silver film covering the hardened photoresist, and finally, the micro-capacitive pattern is obtained.
(7) And carrying out lead wire manufacturing on the obtained micro-capacitor sample. The embodiment adopts a secondary coating connection stitch method, which comprises the following specific steps: and adhering the pin to one end of the microelectrode on the glass slide by using the AB glue, ensuring that one side of the pin faces upwards and is not covered by the AB glue, so that the upward side of the pin can be connected with the AB glue after secondary film coating, and the AB glue is connected with one end of the microelectrode in a slope shape to finally achieve the purpose of connecting the pin and the micro-capacitor electrode plate (as shown in figure 8).
The invention adopts a method of combining femtosecond laser two-photon 3D direct writing and magnetron sputtering coating to manufacture the micro capacitor. Compared with the traditional micro-capacitance processing method, the laser processing has the advantages of high processing precision, small influence on processing materials, high processing speed, relatively small pollution and noise and the like. The femtosecond laser has very high light intensity on a focus after being focused, so that when the femtosecond laser interacts with a material, the material can generate a remarkable nonlinear optical effect. Two-photon absorption refers to a process in which a molecule of a material absorbs two photons simultaneously and transits from a ground state to an excited state under excitation of strong light. The femtosecond laser two-photon micromachining is to induce the material to locally generate two-photon absorption by femtosecond laser, to initiate the processes of photoreduction, photopolymerization, photodissociation and the like, to selectively generate the process in a certain range by using a three-dimensional control system, and then to obtain a three-dimensional structure by some subsequent processing processes.
When the interdigital micro-capacitor structure is used for manufacturing patterns with overlarge periodicity and overlong integral structure due to the reasons of the instability of laser power caused by the uneven flatness of a glass carrying substrate and the change of the surrounding environment, the laser focus always deviates from the substrate, so that the manufactured patterns are often deformed and even drift. Therefore, the invention adopts a segmented 3D direct writing method, and the film blocking pattern is designed into a mountain-shaped three-dimensional pattern, so that the film blocking pattern can be more easily fixed on the glass slide and is not easy to deform during manufacturing. The invention also provides a method for manufacturing the lead by secondary coating, and the lead manufactured by the method can be in firmer contact and has smaller resistance.
Claims (1)
1. The preparation method of the micro capacitor is characterized by comprising the following steps:
(1) designing a micro-capacitor structure and a corresponding barrier film pattern, and simultaneously guiding the barrier film pattern into a computer of a micro-processing platform, wherein the micro-capacitor structure is an interdigital micro-capacitor structure, and the barrier film pattern is a three-dimensional pattern;
(2) manufacturing a sample to be carved, placing the sample at a position to be photoetched of a micro-processing platform, and carrying out negative photoetching, wherein the micro-processing platform is a femtosecond laser two-photon micro-processing platform;
(3) cleaning the processed sample for one time to remove the uncured photoresist;
(4) packaging the sample after primary cleaning, and performing primary coating by adopting a magnetron sputtering method, wherein the thickness of the primary coating is 50 nm;
(5) cleaning the sample subjected to primary film coating for the second time to remove the hardened photoresist film-blocking pattern, so as to obtain a micro-capacitance pattern;
(6) manufacturing a lead on the obtained micro-capacitance pattern;
in the step (2), the sample is prepared as follows: pasting an adhesive tape with frosted characteristics on the middle part of the glass slide, then dripping photoresist, finally covering a cover glass,
and (6) manufacturing a lead on the micro-capacitance pattern by adopting a secondary coating connection stitch method, wherein the secondary coating adopts a magnetron sputtering method.
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| CN201711495041.2A CN108231436B (en) | 2017-12-31 | 2017-12-31 | Preparation method of micro capacitor |
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| CN201711495041.2A CN108231436B (en) | 2017-12-31 | 2017-12-31 | Preparation method of micro capacitor |
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| CN108231436B true CN108231436B (en) | 2020-02-07 |
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| CN109920659B (en) * | 2019-03-19 | 2020-12-01 | 北京理工大学 | Method for high-precision machining of micro super capacitor based on electronic dynamic regulation and control |
Citations (6)
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|---|---|---|---|---|
| CN102751434A (en) * | 2012-06-11 | 2012-10-24 | 湖北大学 | Method for preparing electromechanical transduction element based on potassium-sodium niobate lead-free piezoelectric nanofibers |
| CN103903862A (en) * | 2012-12-27 | 2014-07-02 | 北京大学 | Transparent flexible electrochemical device based on planar comb-shaped electrode structure, and preparation method thereof |
| CN104766724A (en) * | 2015-03-06 | 2015-07-08 | 武汉理工大学 | Microfabrication process for micro capacitor based on cobaltosic oxide nano structure |
| CN105097295A (en) * | 2015-07-23 | 2015-11-25 | 武汉理工大学 | High-performance miniature supercapacitor and fabrication method thereof |
| CN106158411A (en) * | 2016-08-17 | 2016-11-23 | 武汉理工大学 | A kind of high-performance symmetrical expression metal-oxide base micro super capacitor and preparation method thereof |
| CN106252076A (en) * | 2016-08-31 | 2016-12-21 | 北京埃德万斯离子束技术研究所股份有限公司 | High-end miniature thin-film capacitor and preparation method |
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- 2017-12-31 CN CN201711495041.2A patent/CN108231436B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751434A (en) * | 2012-06-11 | 2012-10-24 | 湖北大学 | Method for preparing electromechanical transduction element based on potassium-sodium niobate lead-free piezoelectric nanofibers |
| CN103903862A (en) * | 2012-12-27 | 2014-07-02 | 北京大学 | Transparent flexible electrochemical device based on planar comb-shaped electrode structure, and preparation method thereof |
| CN104766724A (en) * | 2015-03-06 | 2015-07-08 | 武汉理工大学 | Microfabrication process for micro capacitor based on cobaltosic oxide nano structure |
| CN105097295A (en) * | 2015-07-23 | 2015-11-25 | 武汉理工大学 | High-performance miniature supercapacitor and fabrication method thereof |
| CN106158411A (en) * | 2016-08-17 | 2016-11-23 | 武汉理工大学 | A kind of high-performance symmetrical expression metal-oxide base micro super capacitor and preparation method thereof |
| CN106252076A (en) * | 2016-08-31 | 2016-12-21 | 北京埃德万斯离子束技术研究所股份有限公司 | High-end miniature thin-film capacitor and preparation method |
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