CN112951728B - Evaporation structure, radiator, semiconductor device and preparation method - Google Patents
Evaporation structure, radiator, semiconductor device and preparation method Download PDFInfo
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- CN112951728B CN112951728B CN202110517273.3A CN202110517273A CN112951728B CN 112951728 B CN112951728 B CN 112951728B CN 202110517273 A CN202110517273 A CN 202110517273A CN 112951728 B CN112951728 B CN 112951728B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
- H01L23/4275—Cooling by change of state, e.g. use of heat pipes by melting or evaporation of solids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
Abstract
The embodiment of the invention provides an evaporation structure, a radiator, a semiconductor device and a preparation method, wherein the preparation method of the evaporation structure comprises the following steps: providing a substrate, and forming a bottom plate, a side plate connected with the bottom plate and a plurality of reflux pieces arranged on the bottom plate at intervals on the substrate, wherein the side plate is provided with a liquid filling port and surrounds the periphery of the bottom plate so as to form a cavity with an opening on the substrate; forming a capillary structure layer on the inner surface of the bottom plate, the inner surface of the side plate and the surface of the reflux piece; providing a base top, arranging a protective piece on a welding area of the base top, and forming a capillary structure layer on one side of the base top, which is provided with the protective piece, so as to form a top plate; separating the protector from the top plate to expose the welding area; the welding area of the top plate corresponds to the side plate and the reflux piece, and the top plate, the side plate and the reflux piece are welded and fixed through the welding area, so that the opening is sealed to enable the bottom plate, the top plate and the side plate to be matched to form an evaporation cavity; and injecting an evaporating liquid through the liquid filling port, and sealing the liquid filling port to form an evaporation structure.
Description
Technical Field
The invention relates to the technical field of evaporation structure preparation, in particular to an evaporation structure, a radiator, a semiconductor device and a preparation method.
Background
At present, a chip is a core for an electronic device to perform operations, and is also one of main heating elements of the electronic device. In a conventional chip, a semiconductor element such as a wafer is packaged in a metal shell, and the heat generated by the semiconductor element is conducted away by using the metal shell, so that the heat dissipation of the chip is realized.
That is, the wafer of present chip inside passes through the solder ball to be fixed to the base plate on, and the heat that the wafer during operation wafer produced is through the solder ball heat dissipation to the base plate of below on, on the metal casing at top through the heat conduction material heat dissipation of wafer top simultaneously. For most metal-packaged chips, the main heat dissipation path of the die is to transfer heat to the metal shell through the heat conduction material above the die, and then the metal shell is transferred to other heat dissipation devices such as a heat sink through the heat conduction material. Because the metal shell is connected with the radiator, the heat dissipation path which takes away the heat transferred by the metal shell by the radiator bears most of the heat dissipation amount, and the heat resistance on the heat dissipation path directly influences the temperature of the internal wafer.
However, the conventional chip has poor heat dissipation effect only by the heat dissipation method of metal shell, so how to provide an evaporation structure capable of effectively conducting heat conduction and heat dissipation for semiconductor devices such as chips is a popular subject of research by those skilled in the art.
Disclosure of Invention
Embodiments of the present invention mainly aim to provide an evaporation structure, a heat sink, a semiconductor device and a manufacturing method thereof, and aim to provide an evaporation structure capable of effectively conducting heat conduction and heat dissipation for semiconductor devices such as chips.
In a first aspect, an embodiment of the present invention provides a method for manufacturing an evaporation structure, including:
providing a substrate, and forming a bottom plate, a side plate connected with the bottom plate and a plurality of reflux pieces arranged on the bottom plate at intervals on the substrate, wherein the side plate is provided with a liquid filling port and surrounds the periphery of the bottom plate so as to form a cavity with an opening on the substrate;
forming a capillary structure layer on the inner surface of the bottom plate, the inner surface of the side plate and the surface of the reflux piece;
providing a base top, arranging a protective piece on a welding area of the base top, and forming a capillary structure layer on one side of the base top, which is provided with the protective piece, so as to form a top plate;
separating the protector from the top plate to expose the welding area;
the welding area of the top plate corresponds to the side plate and the reflux piece, and the top plate, the side plate and the reflux piece are welded and fixed through the welding area, so that the opening is sealed to enable the bottom plate, the top plate and the side plate to be matched to form an evaporation cavity;
and injecting an evaporating liquid through the liquid filling port, and sealing the liquid filling port to form an evaporation structure.
In a second aspect, an embodiment of the present invention further provides an evaporation structure adapted to a heat dissipation structure for dissipating heat of a semiconductor device, the evaporation structure including:
a bottom plate connected with the semiconductor element through a support, a top plate arranged at an interval with the bottom plate and connected with the heat dissipation structure, and a side plate connecting the bottom plate and the top plate;
the bottom plate, the top plate and the side plates are matched to form an evaporation cavity, and a plurality of reflux pieces for connecting the bottom plate and the top plate are arranged between the bottom plate and the top plate; wherein, the evaporation structure is made by the preparation method.
In a third aspect, an embodiment of the present invention further provides a heat sink for dissipating heat of a semiconductor device, where the semiconductor device is fixed to a substrate, the heat sink including:
in the evaporation structure, the evaporation structure is connected with one side of the semiconductor element, which is far away from the substrate, and an evaporation cavity for filling evaporation liquid is formed in the evaporation structure;
the support piece is annularly arranged on the peripheral side of the semiconductor element and is arranged at an interval with the semiconductor element, and the support piece is connected with the substrate and the evaporation structure; and
and the heat dissipation structure is connected with one side of the evaporation structure, which is far away from the semiconductor element.
In a fourth aspect, an embodiment of the present invention further provides a semiconductor device, including:
a substrate for providing a load bearing support;
a semiconductor element fixed to the substrate and electrically connected to an external device through the substrate;
in the evaporation structure, the evaporation structure is connected with one side of the semiconductor element, which is far away from the substrate;
the support piece is annularly arranged on the peripheral side of the semiconductor element and is arranged at an interval with the semiconductor element, and the support piece is connected with the substrate and the evaporation structure; and
and the heat dissipation structure is connected with one side of the evaporation structure, which is far away from the semiconductor element.
In a fifth aspect, an embodiment of the present invention further provides a method for manufacturing a semiconductor device, including:
preparing an evaporation structure;
soldering the semiconductor element to one side of the substrate;
connecting a support member to the substrate, wherein the support member is annularly arranged on the peripheral side of the semiconductor element and is arranged at an interval with the semiconductor element; one side of the evaporation structure is attached to the semiconductor element and fixedly connected with the supporting piece and the evaporation structure;
connecting the heat dissipation structure with one side of the evaporation structure, which is far away from the semiconductor element;
wherein, the preparation evaporation structure specifically is:
providing a substrate, and forming a bottom plate, a side plate connected with the bottom plate and a plurality of reflux pieces arranged on the bottom plate at intervals on the substrate, wherein the side plate is provided with a liquid filling port and surrounds the periphery of the bottom plate so as to form a cavity with an opening on the substrate;
forming a capillary structure layer on the inner surface of the bottom plate, the inner surface of the side plate and the surface of the reflux piece;
providing a base top, arranging a protective piece on a welding area of the base top, and forming a capillary structure layer on one side of the base top, which is provided with the protective piece, so as to form a top plate;
separating the protector from the top plate to expose the welding area;
the welding area of the top plate corresponds to the side plate and the reflux piece, and the top plate, the side plate and the reflux piece are welded and fixed through the welding area, so that the opening is sealed to enable the bottom plate, the top plate and the side plate to be matched to form an evaporation cavity;
and injecting an evaporating liquid through the liquid filling port, and sealing the liquid filling port to form an evaporation structure.
The invention provides an evaporation structure, a radiator, a semiconductor device and a preparation method, wherein the evaporation structure is provided with an evaporation cavity filled with evaporation liquid, and is connected with a semiconductor element, so that heat generated by the semiconductor element can be transferred to the evaporation structure to the maximum extent, and the evaporation liquid in the evaporation structure absorbs heat and is evaporated to be converted into gaseous liquid. The vaporized evaporation liquid is contacted with one side matched with the evaporation structure and the heat dissipation structure, part of heat is transferred to the heat dissipation structure and taken away, the evaporation liquid is cooled and liquefied again and is converted into the evaporation liquid, the evaporation liquid flows back to one side of the evaporation structure close to the semiconductor element, the heat generated by the semiconductor element is diffused to the outside through the heat dissipation structure by utilizing the physical state change of the evaporation liquid in the evaporation structure, the effective cooling of the semiconductor element can be realized, and the semiconductor element has stronger high-temperature resistance.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic perspective view of a semiconductor device according to an embodiment of the present invention;
fig. 2 is an exploded view of a semiconductor device according to an embodiment of the present invention;
FIG. 3 is an exploded view of an evaporation structure of a semiconductor device;
fig. 4 is a schematic cross-sectional structure diagram of a semiconductor device provided by an embodiment of the present invention;
fig. 5 is a schematic cross-sectional structure diagram of a modified structure of a semiconductor device according to an embodiment of the present invention;
FIG. 6 is a flow chart of a method for fabricating an evaporation structure according to an embodiment of the present invention;
FIG. 7A is a schematic structural diagram of a base of an evaporation structure according to an embodiment of the present invention, illustrating a state change during a manufacturing process;
FIG. 7B is a schematic diagram of a completed base of an evaporation structure provided in an embodiment of the present invention;
FIG. 8 is a schematic view of a state change structure of a top plate of an evaporation structure provided in an embodiment of the present invention during a manufacturing process;
FIG. 9 is a schematic structural diagram corresponding to a state change in a process for preparing an evaporation structure according to an embodiment of the present invention;
fig. 10 is a flowchart of a method of manufacturing a semiconductor device according to an embodiment of the present invention;
fig. 11 is a schematic structural block diagram of an electronic device according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The flow diagrams depicted in the figures are merely illustrative and do not necessarily include all of the elements and operations/steps, nor do they necessarily have to be performed in the order depicted. For example, some operations/steps may be decomposed, combined or partially combined, so that the actual execution sequence may be changed according to the actual situation.
It is to be understood that the terminology used in the embodiments of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in the examples of the present invention and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
In the following, some embodiments of the present application will be described in detail with reference to the drawings, and features in the following examples and examples may be combined with each other without conflict.
Referring to fig. 1 and fig. 2, an embodiment of the invention provides a semiconductor device 10, where the semiconductor device 10 includes a substrate 20, a semiconductor element 30, and a heat sink 70, where the substrate 20 is used to provide a bearing support for the semiconductor element 30, and the semiconductor element 30 is fixed on the substrate 20 and electrically connected to an external electronic element or electronic device through the substrate 20. The heat sink 70 is fixed to the substrate 20 and connected to the semiconductor element 30 to remove a portion of heat generated by the semiconductor element 30, so as to achieve the effect of dissipating heat of the semiconductor element 30, wherein the semiconductor element 30 may be a chip or a wafer, which is not limited herein.
Specifically, the heat sink 70 includes the evaporation structure 40, the support 50, and the heat dissipation structure 60. The evaporation structure 40 is connected to a side of the semiconductor element 30 away from the substrate 20, and the evaporation structure 40 is formed with an evaporation cavity 401 for filling an evaporation liquid. The evaporation liquid in the evaporation cavity 401 absorbs heat generated by the semiconductor element 30 through liquid-gas state change, and guides the heat absorbed by the heat dissipation structure 60 out of the semiconductor device 10, and meanwhile, the liquid state is recovered, so that effective heat dissipation of the semiconductor element 30 can be continuously realized. The semiconductor element 30 and the evaporation structure 40 may be connected by providing a heat conductive material 80 between the semiconductor element 30 and the evaporation structure 40, and connecting the semiconductor element 30 and the evaporation structure 40 by the heat conductive material 80, as shown in fig. 4, where the evaporation liquid includes, but is not limited to, at least one of water, ethanol, and acetone.
The supporting member 50 is circumferentially disposed on the periphery of the semiconductor element 30 and spaced apart from the semiconductor element 30, and the supporting member 50 connects the substrate 20 and the evaporation structure 40 to form a ring-shaped support for the evaporation structure 40. The connection between the support 50 and the evaporation structure 40 includes, but is not limited to, ultrasonic fusion, welding, gluing, and clamping, and the connection between the support 50 and the substrate 20 includes, but is not limited to, gluing and clamping.
The heat dissipation structure 60 is connected to a side of the evaporation structure 40 away from the semiconductor device 30, and is used to increase a contact area between the evaporation structure 40 and air, so as to dissipate heat for the evaporation structure 40, so as to re-liquefy the gaseous evaporation liquid in the evaporation structure 40.
In this embodiment, the semiconductor element 30 is disposed on the substrate 20, and the substrate 20 and the evaporation structure 40 are supported and connected by the support 50, so that heat generated by the semiconductor element 30 can be maximally transferred to the evaporation structure 40 while providing support for the evaporation structure 40, and further the evaporation liquid in the evaporation structure 40 absorbs heat to be vaporized and is converted into gaseous liquid. The vaporized evaporation liquid is contacted with the evaporation structure 40 and the heat dissipation structure 60 at one side, partial heat is transferred to the heat dissipation structure 60 and taken away, the evaporation liquid is cooled again and converted into the evaporation liquid, the evaporation liquid flows back to one side of the evaporation structure 40 close to the semiconductor element 30, the heat generated by the semiconductor element 30 is diffused to the outside through the heat dissipation structure 60 by utilizing the physical state change of the evaporation liquid in the evaporation structure 40, the effective cooling of the semiconductor element 30 can be realized, and further the semiconductor device 10 has a stronger heat dissipation effect and can adapt to a higher temperature environment.
Referring to fig. 2, in some embodiments, an external contact 201 is disposed on a side of the substrate 20 away from the semiconductor element 30, and the semiconductor element 30 is fixed to an opposite side of the substrate 20 by soldering and electrically connected to the external contact 201, so as to be adapted to an external electronic element or electronic device through the external contact 201, thereby electrically connecting the semiconductor element 30 and the external electronic element or electronic device.
As shown in fig. 2, in some embodiments, the support 50 may be rectangular or annular and connected between the base plate 20 and the evaporation structure 40 to form a multi-point support for the evaporation structure 40.
Specifically, the support 50 includes a first support portion 501, a second support portion 502 disposed at an interval from the first support portion 501, a third support portion 503 connecting the first support portion 501 and the second support portion 502, and a fourth support portion 504 disposed at an interval from the third support portion 503 and connected to the first support portion 501 and the second support portion 502; the first supporting portion 501, the second supporting portion 502, the third supporting portion 503 and the fourth supporting portion 504 are connected to the evaporation structure 40 to realize annular support of the evaporation structure 40, and a closed accommodating cavity is formed between the substrate 20 and the evaporation structure 40 to accommodate the semiconductor device 30. The semiconductor element 30 is accommodated in the closed accommodating cavity, so that the semiconductor element 30 can be in a relatively closed environment, contamination of the semiconductor element 30 by external impurities is reduced, and meanwhile, heat generated by the semiconductor element 30 can be transferred to the heat dissipation structure from the evaporation structure 40 to the maximum extent.
It is understood that the first supporting portion 501, the second supporting portion 502, the third supporting portion 503 and the fourth supporting portion 504 may be integrally formed, or may be connected to each other by welding, ultrasonic fusion, or adhesive, which is not limited herein.
As shown in fig. 3 and 4, in some embodiments, the evaporation structure 40 is provided with a liquid filling port 406 which is communicated with the formed evaporation cavity 401, a preset amount of the evaporation liquid is filled into the evaporation cavity 401 through the liquid filling port 406, and after the evaporation liquid is filled, the liquid filling port 406 is sealed. The liquid filling port 406 may be sealed by a sealing member, or the liquid filling port 406 may be sealed by electric welding, cold welding, or ultrasonic welding.
Specifically, the evaporation structure 40 includes a bottom plate 402 connected to the semiconductor element 30 and the support 50, a top plate 404 disposed at a distance from the bottom plate 402 and connected to the heat dissipation structure 60, and a side plate 403 connecting the bottom plate 402 and the top plate 404. The bottom plate 402, the top plate 404, and the side plates 403 cooperate to form the evaporation chamber 401, and a plurality of return members 405 connecting the bottom plate 402 and the top plate 404 are provided between the bottom plate 402 and the top plate 404. It is understood that the number of the reflow elements 405 may be one or more, and when there are a plurality of reflow elements 405, they are arranged in an array.
The bottom plate 402, the side plate 403 and the top plate 404 of the evaporation structure 40 are integrally formed to be connected to each other, or the bottom plate 402 and the side plate 403 are integrally formed, and the side plate 403 and the top plate 404 are connected to each other by welding or bonding, or the side plate 403 and the top plate 404 are integrally formed, and the side plate 403 and the bottom plate 402 are connected to each other by welding or bonding, or the bottom plate 402 and the side plate 403 are connected to each other by welding or bonding, and the side plate 403 and the top plate 404 are also connected to each other by welding or bonding, which is not limited herein.
The reflow element 405 is integrally formed with the bottom plate 402 and connected to the top plate 404 by soldering, or the reflow element 405 is integrally formed with the top plate 404 and connected to the bottom plate 402 by soldering, and the reflow element 405 may have a column structure or a polygon structure, which is not limited herein.
The liquid filling port 406 may be provided to at least one of the bottom plate 402, the side plate 403, or the top plate 404 of the evaporation structure 40. In this embodiment, the liquid filling port 406 is provided in the side plate 403, so that the evaporation liquid can be replenished or replaced through the liquid filling port 406 provided in the side plate after the semiconductor device 10 is assembled.
The pressure resistance of the evaporation cavity 401 formed by the evaporation structure 40 can be effectively enhanced by arranging the backflow piece 405, the evaporation cavity 401 is prevented from being flattened, and meanwhile, the liquid condensed on the top plate 404 of the evaporation structure 40 can be effectively accelerated to flow back to the bottom of the evaporation cavity 401 by arranging the backflow piece 405.
Referring to fig. 5, in some embodiments, a capillary structure layer 407 is disposed on a portion of the inner surface of the evaporation structure 40, and the capillary structure layer 407 may be any one of a sintered metal powder layer, a metal mesh layer, a heat conductive fiber layer, a nanofiber layer, or a combination thereof.
Specifically, the capillary structure layer 407 is disposed on at least a surface of the reflow member 405. Alternatively, the capillary structure layer 407 is disposed at least on the inner surface of the top plate 404 and the inner surface of the side plate 403, or the capillary structure layer 407 is disposed at least on the inner surface of the top plate 404, the inner surface of the side plate 403, and the surface of the reflow material 405.
In the present embodiment, the capillary structure layer 407 is formed on both the inner surface of the evaporation cavity 401 and the surface of the reflow material 405, and the capillary structure layer 407 is provided in the evaporation cavity 401 of the evaporation structure 40, so that the capillary structure layer 407 has a pore structure, and the pore structure generates a strong capillary force, and thus all the evaporation liquid injected into the evaporation cavity 401 is adsorbed in the pore structure. When the semiconductor device 10 starts to operate, the semiconductor element 30 starts to generate heat and heat the evaporation liquid in the pore structure of the evaporation cavity 401 corresponding to the upper side of the semiconductor element 30, so that the temperature of the evaporation liquid starts to rise. When the temperature rises to exceed the evaporation temperature of the evaporation liquid, the evaporation liquid changes from a liquid state to a vapor state, and the evaporation liquid in the vapor state can fill the whole evaporation cavity 401 because the evaporation liquid in the vapor state is not limited by the structure. When the evaporation liquid in the pore structure of the evaporation cavity 401 above the semiconductor element 30 is reduced, due to capillary action, the evaporation liquid in the pore structure of the evaporation cavity 401 outside the semiconductor element 30 is drawn into the area of the evaporation cavity 401 corresponding to the semiconductor element 30, and the newly supplemented evaporation liquid continuously absorbs the heat generated by the semiconductor element 30, and the temperature is continuously raised and evaporated. When the steam hits the top of the evaporation cavity 401, part of the heat is taken away by the heat dissipation structure 60 so that the temperature of the steam is rapidly reduced, and when the temperature is reduced below the condensation temperature of the evaporation liquid, the steam is condensed into a liquid state. The liquid evaporation liquid is drawn back to the bottom of the evaporation cavity 401 through the capillary structure layer 407 on the surface of the reflow element 405, and the heat of the semiconductor element 30 is continuously and efficiently transferred to the heat dissipation structure 60 by the circulation, so as to be dissipated to the air through the heat dissipation structure 60.
In some embodiments, the heat dissipation structure 60 includes a connection board 601 connected to the evaporation structure 40, and a plurality of fins 602 spaced apart from each other on a side of the connection board 601 away from the evaporation structure 40. The connecting plate 601 and the heat sink 602 may be integrally formed, or may be connected to each other by welding or clamping.
In some embodiments, the area of the connection plate 601 of the heat dissipation structure 60 is larger than the area of the top plate 404 of the evaporation structure 40, so that the heat dissipation structure 60 can be sufficiently attached to the evaporation structure 40, and a better heat dissipation effect is achieved for the evaporation structure 40.
Referring to fig. 6, the embodiment of the invention further provides a manufacturing method for manufacturing the evaporation structure 40, which includes steps S11 to S16.
Step S11: providing a substrate, and forming a bottom plate, a side plate connected with the bottom plate, and a plurality of reflux pieces arranged on the bottom plate at intervals on the substrate, wherein a liquid filling port is formed on the side plate, and the side plate is arranged around the bottom plate so as to form a cavity with an opening on the substrate.
As shown in fig. 7A and 7B, a substrate M is provided, and the substrate M is a metal matrix, wherein the metal may be copper, iron, aluminum, or an alloy, and the like, which is not limited herein.
Through a metal etching process, a base of the evaporation structure 40 is formed on the substrate M, and the base includes a bottom plate 402, a side plate 403 connected to the bottom plate 402, and a plurality of reflowing elements 405 arranged at intervals on the bottom plate 402, wherein the side plate 403 is formed with a liquid filling opening 406, and the side plate 403 surrounds the bottom plate 402, so that the substrate forms a chamber with an opening. The liquid fill port 406 on the side plate 403 may be formed during a metal etching process.
It is understood that the bottom plate 402, the side plate 403, and the reflow member 405 formed on the substrate M may be integrally formed by heat pressing.
Step S12: and forming a capillary structure layer on the inner surface of the bottom plate, the inner surface of the side plate and the surface of the backflow piece.
In some embodiments, a layer of metal powder is spread on the inner surface of the bottom plate 402, the inner surface of the side plate 403, and the surface of the reflow member 405, and the capillary structure layer 407a is formed by sintering the metal powder on the inner surface of the bottom plate 402, the inner surface of the side plate 403, and the surface of the reflow member 405, wherein the metal powder includes, but is not limited to, copper powder and iron powder.
In some embodiments, a metal mesh, a heat conductive fiber layer, or a nanofiber layer is soldered to the inner surface of the bottom plate 402, the inner surface of the side plate 403, and the surface of the reflow member 405 to form the capillary structure layer 407 a.
Step S13: providing a base top, arranging a protective piece on a welding area of the base top, and forming a capillary structure layer on one side of the base top, where the protective piece is arranged, to form a top plate, where the welding area is arranged corresponding to the reflow piece and the side plate.
As shown in fig. 8, a base top N is provided, and the base top N includes lands corresponding to the reflow element 405 and the side plate 403, that is, the lands include first lands corresponding to the reflow element 405 and second lands corresponding to the side plate 403. A first protector N1 is provided on a first land of a substrate N, and a second protector N2 is provided on a second land, and the corresponding lands are protected by the first protector N1 and the second protector N2 to prevent the corresponding lands from being contaminated.
After the first protector N1 is disposed on the first bonding pad and the second protector N2 is disposed on the second bonding pad, the capillary structure layer 407b is formed on the side of the substrate top N where the protector is disposed, so that the capillary structure layer 407b is formed in the region of the substrate top N where the protector is not disposed, and the substrate top N is made into the top plate 404.
In some embodiments, the capillary structure layer 407b may be formed on the side of the superstrate N where the protector is disposed by laying a layer of metal powder on the side of the superstrate N where the protector is disposed and forming the capillary structure layer 407b on the superstrate N by sintering, thereby forming the superstrate N into the top plate 404.
In some embodiments, the capillary structure layer 407b may be formed on the side of the base top N where the protector is disposed by welding a metal mesh, a heat conductive fiber layer, or a nanofiber layer to form the capillary structure layer 407b, so as to form the top plate 404.
Step S14: separating the protector from the top plate to expose the welding area.
The first protector N1 and the second protector N2 are separated from the top plate 404 so that the welding area on the top plate 404 is exposed.
Step S15: and enabling a welding area of the top plate to correspond to the side plate and the reflux piece, and fixedly welding the top plate, the side plate and the reflux piece through the welding area so as to cover the opening and enable the bottom plate, the top plate and the side plate to be matched to form an evaporation cavity.
Referring to fig. 9, the top plate 404 is illustratively positioned such that the first lands of the top plate 404 correspond to the reflow elements 405 and the second lands correspond to the side plates 403. The top plate 404, the side plate 403 and the reflow material 405 are soldered and fixed by a solder region to cover the opening of the chamber, so that the bottom plate 402, the top plate 404 and the side plate 403 cooperate to form an evaporation chamber.
Step S16: and injecting evaporating liquid through the liquid filling port, and sealing the liquid filling port to form the evaporation structure.
In some embodiments, injecting an evaporation liquid through the liquid filling port and sealing the liquid filling port specifically includes:
vacuumizing the evaporation cavity through the liquid filling port;
and injecting the evaporating liquid into the vacuum evaporation cavity through the liquid filling port, and closing the liquid filling port to form the evaporation structure. As shown in fig. 9, the evaporation cavity 401 is evacuated through the liquid filling port 406, and the evaporation liquid is filled into the evaporation cavity 401 in a vacuum state through the liquid filling port 406, and then the liquid filling port 406 is sealed to store the evaporation liquid in the evaporation cavity 401, so as to form the evaporation structure 40.
In some embodiments, the order of step S11, step S12, and step S13 may be changed, specifically, step S13 is performed first, and then step S11 and step S12 are performed.
Referring to fig. 10, an embodiment of the present application further provides a method for manufacturing a semiconductor device, where the method includes steps 21 to 25.
Step S21: an evaporation structure was prepared.
In some embodiments, the specific steps of preparing the evaporation structure are the same as steps S11-S16 in fig. 6, that is, preparing the evaporation structure includes:
providing a substrate, and forming a bottom plate, a side plate connected with the bottom plate and a plurality of reflux pieces arranged on the bottom plate at intervals on the substrate, wherein a liquid filling port is formed on the side plate, and the side plate is arranged around the periphery of the bottom plate so as to form a cavity with an opening on the substrate;
forming a capillary structure layer on the inner surface of the bottom plate, the inner surface of the side plate and the surface of the backflow piece;
providing a base top, arranging a protective piece on a welding area of the base top, and forming a capillary structure layer on one side of the base top, where the protective piece is arranged, so as to form a top plate, wherein the welding area is arranged corresponding to the reflow piece and the side plate;
separating the protector from the top plate to expose the welding area;
the welding area of the top plate corresponds to the side plate and the reflux piece, and the top plate, the side plate and the reflux piece are welded and fixed through the welding area so as to cover the opening and enable the bottom plate, the top plate and the side plate to be matched to form an evaporation cavity;
and injecting evaporating liquid through the liquid filling port, and sealing the liquid filling port to form the evaporation structure.
For a detailed description of the steps for preparing the evaporation structure, please refer to the related description of steps S11-S16 in fig. 6, which is not repeated herein.
Step S22: and soldering the semiconductor element on one side of the substrate.
The semiconductor element 30 is fixed to one side of the substrate 20 to be electrically connected to an external electronic element or electronic device through the substrate 20. Specifically, an external contact point 201 may be disposed on one side of the substrate 20 away from the semiconductor element 30, and the semiconductor element 30 is fixed to the opposite side of the substrate 20 by soldering and electrically connected to the external contact point 201, so as to be adapted to an external electronic element or electronic device through the external contact point 201, thereby electrically connecting the semiconductor element 30 and the external electronic element or electronic device, as shown in fig. 5.
Step S23: and connecting a support member with the substrate, wherein the support member is annularly arranged on the peripheral side of the semiconductor element and is arranged at an interval with the semiconductor element.
The support members 50 are respectively connected and fixed to the substrate 20 and the evaporation structure 40, wherein the support members 50 are annularly arranged on the peripheral side of the semiconductor element 30 and are spaced apart from the semiconductor element 30. The support 50 may be fixed to the substrate 20 and the evaporation structure 40 by welding or by an adhesive, which is not limited herein.
Step S24: and attaching one side of the evaporation structure to the semiconductor element, and fixedly connecting the support piece and the evaporation structure.
A layer of heat conductive adhesive 80 is applied on the semiconductor element 30, and then the evaporation structure 40 is attached to the semiconductor element 30 through the heat conductive adhesive 80, and the supporting member 50 and the evaporation structure 40 are fixedly connected. The support 50 and the evaporation structure 40 may be fixedly connected by welding or by an adhesive, which is not limited herein.
Step S25: and connecting the heat dissipation structure with the other side of the evaporation structure.
The heat dissipation structure 60 is connected to the side of the evaporation structure 40 away from the semiconductor element 30, wherein the fixed connection may be a connection by soldering or an adhesive, which is not limited herein.
Referring to fig. 11, the present invention further provides an electronic apparatus 100, where the electronic apparatus 100 includes a semiconductor device 10 and a memory 90, and the semiconductor device 10 and the memory 90 are connected by a bus, such as an I2C (Inter-integrated Circuit) bus. The electronic device 100 includes, but is not limited to, a mobile phone, a tablet computer, a notebook computer, a desktop computer, a personal digital assistant, a wearable device, and the like.
It should be understood that the term "and/or" as used in this specification and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items. It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or system. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or system that comprises the element.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The above-mentioned serial numbers of the embodiments of the present invention are merely for description and do not represent the merits of the embodiments. While the invention has been described with reference to specific embodiments, the invention is not limited thereto, and various equivalent modifications and substitutions can be easily made by those skilled in the art without departing from the scope of the invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A method of making an evaporation structure, the method comprising:
providing a substrate, and forming a bottom plate, a side plate connected with the bottom plate and a plurality of reflux pieces arranged on the bottom plate at intervals on the substrate, wherein a liquid filling port is formed on the side plate, and the side plate is arranged around the periphery of the bottom plate so as to form a cavity with an opening on the substrate;
forming a capillary structure layer on the inner surface of the bottom plate, the inner surface of the side plate and the surface of the backflow piece;
providing a base top, arranging a protective piece on a welding area of the base top, laying metal powder on one side of the base top, which is provided with the protective piece, and forming a capillary structure layer through sintering to form a top plate;
separating the protector from the top plate to expose the welding area;
the welding area of the top plate corresponds to the side plate and the reflux piece, and the top plate, the side plate and the reflux piece are welded and fixed through the welding area so as to cover the opening and enable the bottom plate, the top plate and the side plate to be matched to form an evaporation cavity;
and injecting evaporating liquid through the liquid filling port, and sealing the liquid filling port to form the evaporation structure.
2. The method as claimed in claim 1, wherein forming a capillary structure layer on a side of the substrate on which the protector is disposed to form a top plate comprises:
and paving metal powder on one side of the base top, which is provided with the protective piece, and sintering and fixing the metal powder on the base top to form a top plate with a capillary structure layer.
3. The production method according to any one of claims 1 to 2, wherein the injecting an evaporative liquid through the liquid-filling port and sealing the liquid-filling port comprises:
vacuumizing the evaporation cavity through the liquid filling port;
and injecting the evaporating liquid into the vacuum evaporation cavity through the liquid filling port, and closing the liquid filling port to form the evaporation structure.
4. The method of any one of claims 1-2, wherein the evaporative liquid comprises at least one of water, propanol, or ethanol.
5. An evaporation structure adapted to dissipate heat from a semiconductor element in conjunction with a heat dissipation structure, the evaporation structure comprising:
the heat dissipation structure comprises a bottom plate connected with the semiconductor element through a support piece, a top plate arranged at an interval with the bottom plate and connected with the heat dissipation structure, and a side plate connecting the bottom plate and the top plate;
the bottom plate, the top plate and the side plates are matched to form the evaporation cavity, and a plurality of reflux pieces for connecting the bottom plate and the top plate are arranged between the bottom plate and the top plate;
wherein the evaporation structure is manufactured by the manufacturing method of any one of claims 1 to 4.
6. A heat sink for dissipating heat from a semiconductor component, the semiconductor component being secured to a substrate, the heat sink comprising:
the evaporation structure of claim 5, wherein the evaporation structure is connected with the side of the semiconductor element away from the substrate, and the evaporation structure is formed with an evaporation cavity for filling an evaporation liquid;
the support piece is annularly arranged on the peripheral side of the semiconductor element and is arranged at an interval with the semiconductor element, and the support piece is connected with the substrate and the evaporation structure; and
and the heat dissipation structure is connected with one side of the evaporation structure, which is far away from the semiconductor element.
7. The heat sink of claim 6, wherein a thermally conductive adhesive is disposed between the semiconductor element and the evaporation structure, the semiconductor element and the bottom plate of the evaporation structure being connected by the thermally conductive adhesive.
8. A semiconductor device, characterized in that the semiconductor device comprises:
a substrate for providing a load bearing support;
a semiconductor element fixed to the substrate and electrically connected to an external device through the substrate;
the evaporation structure of claim 5, said evaporation structure being connected to a side of said semiconductor element remote from said substrate;
the support piece is annularly arranged on the peripheral side of the semiconductor element and is arranged at an interval with the semiconductor element, and the support piece is connected with the substrate and the evaporation structure; and
and the heat dissipation structure is connected with one side of the evaporation structure, which is far away from the semiconductor element.
9. The semiconductor device according to claim 8, wherein a heat conductive adhesive is provided between the semiconductor element and the evaporation structure, and the semiconductor element and the bottom plate of the evaporation structure are connected by the heat conductive adhesive.
10. A method of manufacturing a semiconductor device, the method comprising:
preparing an evaporation structure;
soldering the semiconductor element to one side of the substrate;
connecting a support member to the substrate, wherein the support member is annularly arranged on the peripheral side of the semiconductor element and is arranged at an interval with the semiconductor element;
attaching one side of the evaporation structure to a semiconductor element, and fixedly connecting the support piece and the evaporation structure;
connecting a heat dissipation structure with one side of the evaporation structure, which is far away from the semiconductor element;
wherein, preparing the evaporation structure specifically comprises:
providing a substrate, and forming a bottom plate, a side plate connected with the bottom plate and a plurality of reflux pieces arranged on the bottom plate at intervals on the substrate, wherein a liquid filling port is formed on the side plate, and the side plate is arranged around the periphery of the bottom plate so as to form a cavity with an opening on the substrate;
forming a capillary structure layer on the inner surface of the bottom plate, the inner surface of the side plate and the surface of the backflow piece;
providing a base top, arranging a protective piece on a welding area of the base top, laying metal powder on one side of the base top, which is provided with the protective piece, and forming a capillary structure layer through sintering to form a top plate;
separating the protector from the top plate to expose the welding area;
the welding area of the top plate corresponds to the side plate and the reflux piece, and the top plate, the side plate and the reflux piece are welded and fixed through the welding area so as to cover the opening and enable the bottom plate, the top plate and the side plate to be matched to form an evaporation cavity;
and injecting evaporating liquid through the liquid filling port, and sealing the liquid filling port to form the evaporation structure.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN202110517273.3A CN112951728B (en) | 2021-05-12 | 2021-05-12 | Evaporation structure, radiator, semiconductor device and preparation method |
| PCT/CN2022/085123 WO2022237388A1 (en) | 2021-05-12 | 2022-04-02 | Evaporation structure, heat sink, semiconductor device, and preparation method |
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| CN202110517273.3A CN112951728B (en) | 2021-05-12 | 2021-05-12 | Evaporation structure, radiator, semiconductor device and preparation method |
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| JPH09293808A (en) * | 1996-04-25 | 1997-11-11 | Fujitsu Ltd | Semiconductor device |
| CN1195196C (en) * | 2002-01-10 | 2005-03-30 | 杨洪武 | Integzated type heat pipe and heat exchange method |
| TWI284190B (en) * | 2004-11-11 | 2007-07-21 | Taiwan Microloops Corp | Bendable heat spreader with metallic screens based micro-structure and method for fabricating same |
| CN101232794B (en) * | 2007-01-24 | 2011-11-30 | 富准精密工业(深圳)有限公司 | Soaking plate and heat radiating device |
| US20090025910A1 (en) * | 2007-07-27 | 2009-01-29 | Paul Hoffman | Vapor chamber structure with improved wick and method for manufacturing the same |
| CN101927426A (en) * | 2009-06-24 | 2010-12-29 | 富准精密工业(深圳)有限公司 | Uniform-temperature panel and manufacturing method thereof |
| CN101995182A (en) * | 2009-08-11 | 2011-03-30 | 和硕联合科技股份有限公司 | Uniform temperature plate and manufacturing method thereof |
| JP2011096994A (en) * | 2009-09-29 | 2011-05-12 | Kyocera Corp | Cooler, wiring board and light emitting body |
| CN103398613B (en) * | 2013-07-22 | 2016-01-20 | 施金城 | Soaking plate and manufacture method thereof |
| CN204301376U (en) * | 2014-11-14 | 2015-04-29 | 广东五星太阳能股份有限公司 | A kind of capillary jet flow sound noise reducing mechanism and use the heat pump assembly of this mechanism |
| US10561041B2 (en) * | 2017-10-18 | 2020-02-11 | Pimems, Inc. | Titanium thermal module |
| CN111863746B (en) * | 2019-04-25 | 2023-10-13 | 华为技术有限公司 | Heat abstractor, circuit board and electronic equipment |
| CN111725144A (en) * | 2020-05-22 | 2020-09-29 | 上海交通大学 | High-temperature electronic packaging substrate material device based on gas-liquid phase change and preparation method thereof |
| CN112951728B (en) * | 2021-05-12 | 2022-02-15 | 中兴通讯股份有限公司 | Evaporation structure, radiator, semiconductor device and preparation method |
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| WO2022237388A1 (en) | 2022-11-17 |
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