CN112916226A - Method and device for generating quantum dots and material prepared by using device - Google Patents
Method and device for generating quantum dots and material prepared by using device Download PDFInfo
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- CN112916226A CN112916226A CN202110095771.3A CN202110095771A CN112916226A CN 112916226 A CN112916226 A CN 112916226A CN 202110095771 A CN202110095771 A CN 202110095771A CN 112916226 A CN112916226 A CN 112916226A
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 78
- 239000000463 material Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000007921 spray Substances 0.000 claims abstract description 36
- 238000006243 chemical reaction Methods 0.000 claims abstract description 35
- 230000005684 electric field Effects 0.000 claims abstract description 24
- 239000007788 liquid Substances 0.000 claims description 50
- 238000005507 spraying Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000007590 electrostatic spraying Methods 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
- B05B5/08—Plant for applying liquids or other fluent materials to objects
- B05B5/087—Arrangements of electrodes, e.g. of charging, shielding, collecting electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
- B05B5/08—Plant for applying liquids or other fluent materials to objects
- B05B5/12—Plant for applying liquids or other fluent materials to objects specially adapted for coating the interior of hollow bodies
Abstract
The invention provides a method and a device for generating quantum dots and a material prepared by using the device, wherein the device comprises a reaction chamber, a first electrode, a second electrode and an electrostatic sprayer, and the method for generating the quantum dots is provided by using the device: a first electrode for growing quantum dots is arranged at the lower end in the reaction chamber; the electrostatic sprayer sprays electrostatic spray dissolved with quantum dot materials to the reaction chamber; arranging a second electrode at the upper end in the reaction chamber, applying voltage between the second electrode and the first electrode to form a controllable electric field, so that the quantum dot material in the electrostatic spray is settled towards the first electrode under the action of the electric field force of the controllable electric field, and growing quantum dots on the first electrode; the quantum dot material is prepared by using the device and the method.
Description
Technical Field
The invention relates to the field of quantum dot material preparation, in particular to a method and a device for generating quantum dots and a material prepared by using the device.
Background
At present, when a quantum dot material is prepared, the position of a quantum dot in most devices is uncontrollable randomly. The template method and the photoetching device can control the preparation of the quantum dots in position, but the preparation of the template is uncontrollable, and the influence of photoetching on the quantum effect of the quantum dots is large. The preparation of the quantum dot array with controllable position is the content that nano material researchers are exploring, the preparation of a small number of quantum dots and quantum wires with required shapes is still difficult, and the accurate positioning growth is a well-known problem.
Patent CN201120526391.2 discloses a "device for controllably generating quantum dots", in which quantum dots in a solution are used, the solution quantum dots in a container are pressurized to make the synthesized quantum dots charged, and then the quantum dots are controlled by a control electrode.
However, the prior art still has the following problems: the device disclosed in patent CN201120526391.2 adopts the solution to store the quantum dots to prepare controllable quantum dots and quantum wires, and when the device is powered on, because the solution is directly connected with two electrodes, the quantum dots in the solution are easy to fail to be pressurized, which can affect the efficiency of quantum dot production and increase the cost.
Therefore, it is necessary to provide a technical solution to the problem of affecting the efficiency of producing quantum dots in the prior art.
Disclosure of Invention
In order to solve the technical problem, the invention provides a device for controllably generating quantum dots, which adopts the following specific technical scheme:
an apparatus for generating quantum dots, the apparatus comprising:
the device comprises a reaction chamber, wherein a first electrode for growing quantum dots is arranged at the lower end in the reaction chamber;
an electrostatic atomizer charged with a sol containing a quantum dot material,
the electrostatic sprayer sprays the sol to the reaction chamber to form electrostatic spray;
and the second electrode is arranged at the upper end in the reaction chamber, and controllable voltage is applied between the second electrode and the first electrode to form an electric field, so that charged droplets containing quantum dot materials in the electrostatic spray are settled towards the position of the first electrode under the action of the electric field force of the electric field, and quantum dots grow on the first electrode.
Preferably, the first electrode is one of a conductor and a semiconductor material, and the first electrode is subjected to surface etching to form a protrusion.
Preferably, the device further comprises a temperature control system, wherein the temperature control system comprises a temperature controller and an electric heater; wherein the electric heater is disposed under the first electrode; the electric heater is electrically connected with the temperature controller outside the reaction cavity.
Preferably, the electrostatic atomizer includes a liquid spraying section having a nozzle for ejecting a liquid, and a voltage applying unit for applying a voltage between the liquid spraying section and a different-pole section functioning as a different pole with respect to the liquid spraying section to generate an electrostatic force for detaching the liquid from a tip of the nozzle in a charged state.
Preferably, the temperature controller may control a temperature of the electric heater, and the electric heater heats the first electrode to volatilize the liquid attached to the surface of the first electrode.
Preferably, the device for generating quantum dots further comprises a magnetic field generating device, the magnetic field generating device is arranged around the reaction chamber, and the falling point of the charged droplets in the electrostatic spray on the first electrode can be controlled by adjusting the magnetic field generated by the magnetic field generating device.
A method of generating quantum dots, the method comprising:
adding sol containing quantum dot materials into an electrostatic sprayer;
performing surface etching on the first electrode to form a plurality of bulges on the surface of the first electrode, and adjusting the voltage between the first electrode and the second electrode to form a controllable electric field;
adjusting the spray rate of the electrostatic sprayer to keep the concentration of the electrostatic spray in the reaction chamber stable;
and the charged liquid drops containing the quantum dot materials in the electrostatic spraying settle to the position of the first electrode under the action of the electric field force of the electric field, and the quantum dots grow on the first electrode.
Preferably, the method further comprises: and adjusting the magnetic field generated by the magnetic field generating device to control the landing point of the charged liquid drops in the electrostatic spray on the first electrode.
Preferably, the method further comprises: and heating the first electrode to volatilize the liquid attached to the surface of the first electrode, and performing heat treatment on the first electrode after the liquid is volatilized, so that the attachment degree of the quantum dots is improved.
A quantum dot material prepared using the method, apparatus as described above.
The quantum dot material is prepared by using the method and the device provided by the invention, so that the device is prevented from being broken down due to overlarge applied voltage.
Drawings
FIG. 1 is a schematic diagram of an apparatus for producing quantum dots;
FIG. 2 is a schematic view of a liquid spray section;
FIG. 3 is a schematic view of a temperature control system.
Detailed Description
The technical solution in the embodiments of the present invention is clearly and completely described below with reference to the drawings in the embodiments of the present invention. It should be apparent that the described embodiments are only a few embodiments of the present invention, and not all embodiments. All other embodiments obtained by a person skilled in the art without making creative efforts based on the embodiments of the present invention belong to the protection scope of the present invention.
The following describes embodiments of the present invention in further detail.
Fig. 1 shows a device for generating quantum dots, which includes: reaction chamber 1, electrostatic atomizer 2, first electrode 3, second electrode 4.
As an exemplary embodiment, the reaction chamber 1 may be a reaction chamber having a cavity therein and a liquid discharge port 6 at the lower part, and preferably, the inner wall of the reaction chamber 1 should be arranged with an insulating material to prevent the device provided by the present invention from generating electric leakage and causing damage during operation.
A first electrode 3 used for growing quantum dots is arranged at the lower end in the reaction chamber 1, the first electrode 3 is one of a conductor and a semiconductor material, and the surface of the first electrode 3 is etched to form a protrusion;
an electrostatic sprayer 2, wherein the electrostatic sprayer 2 sprays electrostatic spray dissolved with quantum dot materials to the reaction chamber;
and the second electrode 4 is arranged at the upper end of the reaction chamber 1, a voltage is applied between the second electrode 4 and the first electrode 3 to form a controllable electric field, so that the quantum dot material in the electrostatic spray is settled towards the position of the first electrode 3 under the action of the electric field force of the controllable electric field, and the quantum dot grows on the first electrode 3.
Due to the principle of the point discharge, the electric field in the vicinity of the convex portion is larger than that in the vicinity of the non-convex portion on the surface of the first electrode 3, and the electrostatically charged droplets sprayed by the electrostatic atomizer 2 are deposited toward the convex portion. Therefore, the growth position of the quantum dots can be controlled by adjusting the surface etching of the first electrode 3.
As an exemplary embodiment, the device provided by the present invention further comprises a temperature control system 5, the temperature control system 5 may comprise a temperature controller 501 and an electric heater 502, wherein the electric heater 502 is disposed below the first electrode 3; the electric heater 502 is electrically connected to the temperature controller outside the reaction chamber 1.
The temperature controller 501 may control the temperature of the electric heater 502, and the electric heater 502 heats the first electrode 3 to volatilize the liquid attached to the surface of the first electrode 3.
As an exemplary embodiment, the electrostatic atomizer 2 shown in fig. 1 includes a liquid spray part 20 and a voltage applying unit 25, the liquid spray part 20 has a nozzle 22 for spraying a liquid, and the voltage applying unit 25 applies a voltage between the liquid spray part 20 and a different electrode part functioning as a different electrode with respect to the liquid spray part 20, specifically, the voltage applying unit 25 may apply a voltage between the liquid spray part 20 and the first electrode 3 such that the first electrode 3 is different in polarity from the liquid spray part 20 and the second electrode 4 is the same in polarity with respect to the liquid spray part 20, and generate an electrostatic force for detaching the liquid from the tip of the nozzle in a charged state.
It is desirable that the nozzle 22 of the electrostatic atomizer 2 should be disposed at the upper end portion of the reaction chamber 1 so that the electrostatic spray sprayed toward the reaction chamber 1 is between the first electrode 3 and the second electrode 4.
Fig. 2 is a sectional view of the liquid spraying section 20. As shown in fig. 2, the liquid spray unit 20 includes a main body 21, a nozzle 22, and a stem 23. The main body 21 is made of an insulating material, and a liquid flow path 21b is formed inside the main body. The liquid channel 21b has a liquid supply port 21a for supplying liquid. The nozzle 22 has a through hole provided at the tip of the body 21 so as to communicate with the liquid channel 21b of the body 21. The stem 23 is made of a conductive material and is disposed in the liquid channel 21b of the body 21 and the through hole of the nozzle 22.
The body 21 is provided with a hole 21c communicating with the liquid flow path 21b to take out the stem 23 to the rear end side. A seal member 24 is provided in this hole portion 21c so as to seal the gap between it and the stem 23 so that liquid does not leak. In the present embodiment, an O-ring is used as the sealing member 24, but the present invention is not limited to the O-ring, and any member capable of sealing may be used.
Further, a knob portion 23a formed of an insulating material is provided at the rear end of the stem 23 located on the rear end side of the body portion 21, and an electric wiring connection portion 23b formed of a conductive material is provided. The harness connection portion 23b is provided so as to penetrate through substantially the center of the knob portion 23 a.
As shown in fig. 2, the harness from the voltage application unit 25 is connected to the harness connection portion 23 b. As shown in fig. 2, the stem 23 and the wire connection portion 23b are electrically connected by disposing the wire connection portion 23b in contact with the stem 23.
In one embodiment, the liquid spraying section 20, the first electrode 3, and the second electrode 4 may share the voltage applying unit 25, that is, one end of the voltage applying unit 25 is electrically connected to the first electrode 3, and the other end of the voltage applying unit 25 is electrically connected to the liquid spraying section 20 and the second electrode 4.
As an embodiment, the device for generating quantum dots may further include a magnetic field generating device disposed around the reaction chamber 1, and the magnetic field generated by the magnetic field generating device is adjusted to further control the landing point of the charged droplets in the electrostatic spray on the first electrode 3 under the influence of the lorentz force.
The embodiment of the invention provides a method for generating quantum dots, which comprises the following steps:
and etching the surface of the first electrode 3 to form a plurality of bulges on the surface of the first electrode 3, and arranging the etched first electrode 3 at a position close to the lower end in the reaction chamber 1 for growing quantum dots.
A second electrode 4 is arranged in the reaction chamber 1 and close to the upper end, a certain distance is formed between the first electrode 3 and the second electrode 4, and a voltage is applied between the second electrode 4 and the first electrode 3 to form a controllable electric field;
adding sol containing quantum dot materials into an electrostatic sprayer 2, applying a voltage different from that of a first electrode to the electrostatic sprayer 2, spraying electrostatic spray with the quantum dot materials dissolved into the reaction chamber 1 by the electrostatic sprayer 2, and adjusting the spraying rate of the electrostatic sprayer to keep the concentration of the electrostatic spray in the reaction chamber stable;
the electrostatic spray sprayed by the electrostatic sprayer 2 has charges different from those of the first electrode 3, and therefore, the quantum dot material in the electrostatic spray is settled toward the first electrode 3 under the action of the electric field force of the controllable electric field, and the quantum dot grows on the first electrode 3.
Since the first electrode 3 is subjected to surface etching in advance, the surface of the first electrode has a plurality of micro protrusions, and according to the principle of protrusion discharge, the electric field near the protrusions is much larger than the electric field near the non-protrusions on the surface of the first electrode 3, and therefore, the droplets sprayed by the electrostatic sprayer 2 are deposited on the protrusions.
The growth position of the quantum dots can be controlled by adjusting the surface etching of the first electrode 3.
As an exemplary embodiment, the method may further include: magnetic field generating means is arranged around the reaction chamber 1, and the action of adjusting the magnetic field generated by the magnetic field generating means may include adjusting the magnitude and direction of the magnetic field, and controlling the landing point of the charged droplets in the electrostatic spray on the first electrode 3 under the influence of the lorentz force.
After the quantum dots are generated, the voltage between the electrostatic sprayer 2 and the first electrode 3 and the second electrode 4 is closed, the liquid discharge port 6 is opened to discharge the redundant solution in the reaction chamber, when the liquid level reaches the position near the upper surface of the first electrode 3, the liquid discharge port 6 is closed, the electric heater 502 is controlled by the temperature controller 501 to heat the first electrode 3, so that the residual liquid attached to the surface of the first electrode 3 is volatilized, and the heating temperature is 30-50 ℃.
And after the liquid is volatilized, the first electrode 3 is subjected to heat treatment, so that the adhesion degree of the quantum dots is improved.
Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.
Claims (10)
1. An apparatus for generating quantum dots, the apparatus comprising:
the device comprises a reaction chamber, wherein a first electrode for growing quantum dots is arranged at the lower end in the reaction chamber;
the electrostatic sprayer is filled with sol containing quantum dot materials, and sprays the sol to the reaction chamber to form electrostatic spray;
and the second electrode is arranged at the upper end in the reaction chamber, and controllable voltage is applied between the second electrode and the first electrode to form an electric field, so that charged droplets containing quantum dot materials in the electrostatic spray are settled towards the position of the first electrode under the action of the electric field force of the electric field, and quantum dots grow on the first electrode.
2. The device for generating quantum dots according to claim 1, wherein: the first electrode is one of a conductor and a semiconductor material, and the surface of the first electrode is etched to form a protrusion.
3. The device for generating quantum dots according to claim 1, wherein: the device also comprises a temperature control system, wherein the temperature control system comprises a temperature controller and an electric heater; wherein the electric heater is disposed under the first electrode; the electric heater is electrically connected with the temperature controller outside the reaction cavity.
4. The device for generating quantum dots according to claim 1, wherein: the electrostatic atomizer includes a liquid spraying section having a nozzle for spraying a liquid, and a voltage applying unit for applying a voltage between the liquid spraying section and a different-pole section functioning as a different pole with respect to the liquid spraying section to generate an electrostatic force for separating the liquid from a tip of the nozzle in a charged state.
5. A device for generating quantum dots according to claim 3, wherein: the temperature controller may control a temperature of the electric heater, and the electric heater heats the first electrode to volatilize the liquid attached to the surface of the first electrode.
6. The device for generating quantum dots according to claim 1, wherein: the device for generating the quantum dots further comprises a magnetic field generating device, the magnetic field generating device is arranged around the reaction chamber, and the falling point of the charged liquid drops in the electrostatic spray on the first electrode can be controlled by adjusting the magnetic field generated by the magnetic field generating device.
7. A method of producing quantum dots using the quantum dot producing apparatus of any of claims 1-6, the method comprising:
adding sol containing quantum dot materials into an electrostatic sprayer;
performing surface etching on the first electrode to form a plurality of bulges on the surface of the first electrode, and adjusting the voltage between the first electrode and the second electrode to form a controllable electric field;
adjusting the spray rate of the electrostatic sprayer to keep the concentration of the electrostatic spray in the reaction chamber stable;
and the charged liquid drops containing the quantum dot materials in the electrostatic spraying settle to the position of the first electrode under the action of the electric field force of the electric field, and the quantum dots grow on the first electrode.
8. The method of generating quantum dots of claim 7, further comprising: and adjusting the magnetic field generated by the magnetic field generating device to control the landing point of the charged liquid drops in the electrostatic spray on the first electrode.
9. The method of generating quantum dots of claim 7, further comprising: and heating the first electrode to volatilize the liquid attached to the surface of the first electrode, and performing heat treatment on the first electrode after the liquid is volatilized, so that the attachment degree of the quantum dots is improved.
10. A quantum dot material prepared according to any of claims 1-9.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110095771.3A CN112916226A (en) | 2021-01-25 | 2021-01-25 | Method and device for generating quantum dots and material prepared by using device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110095771.3A CN112916226A (en) | 2021-01-25 | 2021-01-25 | Method and device for generating quantum dots and material prepared by using device |
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| CN112916226A true CN112916226A (en) | 2021-06-08 |
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| CN202110095771.3A Pending CN112916226A (en) | 2021-01-25 | 2021-01-25 | Method and device for generating quantum dots and material prepared by using device |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012503216A (en) * | 2008-09-23 | 2012-02-02 | カルメド・ソシエタ・ア・レスポンサビリタ・リミタータ | Method for fabricating a photonic crystal device with a plasmon waveguide |
| CN102431964A (en) * | 2011-12-15 | 2012-05-02 | 北京石油化工学院 | Method for controllable generation of quantum dots or quantum wires |
| CN107478639A (en) * | 2015-04-15 | 2017-12-15 | 江苏理工学院 | Surface enhanced raman scattering substrate |
| CN108348935A (en) * | 2015-11-09 | 2018-07-31 | 阿耐思特岩田株式会社 | Electrostatic atomizer and electrostatic spraying method |
| CN109551374A (en) * | 2019-01-27 | 2019-04-02 | 浙江工业大学 | The controllable abrasive Flow Machining method of electrostatic based on charge tip building-up effect |
| CN110097827A (en) * | 2019-04-10 | 2019-08-06 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
-
2021
- 2021-01-25 CN CN202110095771.3A patent/CN112916226A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012503216A (en) * | 2008-09-23 | 2012-02-02 | カルメド・ソシエタ・ア・レスポンサビリタ・リミタータ | Method for fabricating a photonic crystal device with a plasmon waveguide |
| CN102431964A (en) * | 2011-12-15 | 2012-05-02 | 北京石油化工学院 | Method for controllable generation of quantum dots or quantum wires |
| CN107478639A (en) * | 2015-04-15 | 2017-12-15 | 江苏理工学院 | Surface enhanced raman scattering substrate |
| CN108348935A (en) * | 2015-11-09 | 2018-07-31 | 阿耐思特岩田株式会社 | Electrostatic atomizer and electrostatic spraying method |
| CN109551374A (en) * | 2019-01-27 | 2019-04-02 | 浙江工业大学 | The controllable abrasive Flow Machining method of electrostatic based on charge tip building-up effect |
| CN110097827A (en) * | 2019-04-10 | 2019-08-06 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
Non-Patent Citations (1)
| Title |
|---|
| 苏妤等: "静电喷雾制备量子点", 《材料导报》 * |
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Application publication date: 20210608 |