CN112903149A - Pressure sensor and manufacturing method thereof - Google Patents
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- CN112903149A CN112903149A CN202110089542.0A CN202110089542A CN112903149A CN 112903149 A CN112903149 A CN 112903149A CN 202110089542 A CN202110089542 A CN 202110089542A CN 112903149 A CN112903149 A CN 112903149A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 128
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 85
- 239000002184 metal Substances 0.000 claims description 10
- 238000001259 photo etching Methods 0.000 claims description 7
- 238000005468 ion implantation Methods 0.000 claims description 6
- 230000035945 sensitivity Effects 0.000 abstract description 11
- 238000010586 diagram Methods 0.000 description 29
- 239000010408 film Substances 0.000 description 28
- 239000000463 material Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 14
- 229920005591 polysilicon Polymers 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
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Abstract
The embodiment of the invention provides a pressure sensor and a manufacturing method thereof, wherein the pressure sensor comprises: a substrate and a single crystal silicon piezoresistive element; the substrate comprises a first substrate layer, a second substrate layer and a third substrate layer which are arranged in a stacked mode, and the single-crystal silicon piezoresistive elements are arranged in the third substrate layer. The pressure sensor and the manufacturing method thereof provided by the embodiment of the invention can still ensure that the pressure sensor has higher sensitivity in a high-temperature environment.
Description
Technical Field
The invention relates to the field of sensors, in particular to a pressure sensor and a manufacturing method thereof.
Background
A Micro-Electro-mechanical System (MEMS for short) refers to a Micro device or System that integrates a Micro structure, a Micro sensor, a Micro actuator, a signal processing circuit, a control circuit, an interface, a communication circuit, and a power supply, which can be manufactured in batch; MEMS has the advantages of small volume, light weight, low power consumption, good durability, low price, stable performance and the like, and is widely applied to various fields.
In the traditional preparation process of the diffused silicon piezoresistive pressure sensor, a PN junction is generally adopted to isolate a strain bridge from a strain film, but the leakage current of the PN junction can be sharply increased along with the temperature rise, so that the PN junction can generate larger leakage current when the prepared pressure sensor works in a high-temperature environment, the higher temperature can cause the structural performance of a device to be unstable, and even can cause the failure of a product, and the working temperature of the pressure sensor based on the PN junction isolation at present is lower than 150 ℃.
In order to solve the problems of leakage and performance failure of the pressure sensor under severe conditions such as high temperature and the like, the polycrystalline silicon pressure sensor is produced at the same time, the polycrystalline silicon pressure sensor is generated in the seventies of the twentieth century, and the working temperature of the sensor is obviously improved because the piezoresistor and the substrate silicon wafer are isolated by adopting the insulating layer and the PN junction isolation of the diffused silicon pressure sensor is cancelled. However, the existing polysilicon pressure sensor has a disadvantage in practical application that high sensitivity and low temperature coefficient cannot be obtained simultaneously, which is related to the piezoresistive property of the polysilicon film. The sensitivity of the polysilicon pressure sensor is in direct proportion to the strain coefficient of the polysilicon, and the strain coefficient and the temperature coefficient of the polysilicon are reduced along with the increase of the doping concentration, so that the sensitivity of the polysilicon pressure sensor is reduced when the polysilicon pressure sensor works in an environment with the temperature higher than 150 ℃.
Disclosure of Invention
The pressure sensor and the manufacturing method thereof provided by the embodiment of the invention can still ensure that the pressure sensor has higher sensitivity in a high-temperature environment.
In a first aspect, an embodiment of the present invention provides a pressure sensor, where the pressure sensor includes: a substrate and a single crystal silicon piezoresistive element;
the substrate comprises a first substrate layer, a second substrate layer and a third substrate layer which are arranged in a stacked mode, and the single-crystal silicon piezoresistive elements are arranged in the third substrate layer.
Optionally, the thickness of the single crystal silicon piezoresistive element is equal to the thickness of the third substrate layer.
Optionally, the thickness range of the third substrate layer is 0.2-5 μm.
Optionally, the pressure sensor further includes a first insulating layer, the first insulating layer and the third substrate layer are disposed on the same layer, and the first insulating layer is disposed between the single-crystal silicon piezoresistive element and the third substrate layer.
Optionally, the pressure sensor further includes a second insulating layer, where the second insulating layer is disposed on a side of the third substrate layer away from the second substrate layer; the second insulating layer covers at least the single-crystal silicon piezoresistive element.
Optionally, the pressure sensor further comprises an epitaxial film layer;
the epitaxial film layer is arranged on one side, far away from the second substrate layer, of the second insulating layer;
the epitaxial film layer covers the second insulating layer.
Optionally, the single-crystal silicon piezoresistive element comprises a piezoresistive sensing part and the piezoresistive connecting part;
the piezoresistive sensing part is adjacent to the piezoresistive connecting part;
the piezoresistive sensing part and the piezoresistive connecting part are both arranged on one side, far away from the first substrate layer, of the second substrate layer.
Optionally, the pressure sensor further comprises a metal electrode; the metal electrode penetrates through the epitaxial film layer and the second insulating layer and is connected with the piezoresistive connecting part.
In a second aspect, an embodiment of the present invention further provides a method for manufacturing a pressure sensor, where the method for manufacturing a pressure sensor includes:
providing a substrate, wherein the substrate comprises a first substrate layer, a second substrate layer and a third substrate layer which are arranged in a stacked mode;
a single crystal silicon piezoresistive element is formed within the third substrate layer.
Optionally, forming a single-crystal silicon piezoresistive element within the third substrate layer comprises: and carrying out first photoetching, first developing and first ion implantation on the third substrate layer to form a piezoresistive connecting part of the monocrystalline silicon piezoresistive element, and carrying out second photoetching, second developing and second ion implantation on the third substrate layer to form a piezoresistive sensing part of the monocrystalline silicon piezoresistive element.
According to the pressure sensor provided by the embodiment of the invention, the monocrystalline silicon piezoresistive element is arranged in the third substrate layer, and the third substrate layer is made of monocrystalline silicon, so that the monocrystalline silicon piezoresistive element can be directly manufactured by using the third substrate layer, and the process steps are simplified. The pressure sensor provided by the embodiment of the invention can still ensure higher sensitivity of the pressure sensor in a high-temperature environment.
Drawings
Fig. 1 is a schematic structural diagram of a pressure sensor according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of another pressure sensor provided in an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of another pressure sensor according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a pressure sensor according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a pressure sensor according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a pressure sensor according to an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of another pressure sensor provided in an embodiment of the present invention;
fig. 8 is a schematic flow chart illustrating a method for manufacturing a pressure sensor according to an embodiment of the present invention;
FIG. 9 is a schematic structural diagram of a substrate according to an embodiment of the present invention;
FIG. 10 is a schematic flow chart illustrating a method for fabricating a pressure sensor according to another embodiment of the present invention;
fig. 11 is a schematic structural diagram of a pressure sensor according to an embodiment of the present invention;
fig. 12 is a schematic structural diagram of a pressure sensor according to an embodiment of the present invention;
FIG. 13 is a schematic flow chart illustrating a method for fabricating a pressure sensor according to another embodiment of the present invention;
fig. 14 is a schematic structural diagram of a pressure sensor according to an embodiment of the present invention;
fig. 15 is a schematic structural diagram of a pressure sensor according to an embodiment of the present invention;
fig. 16 is a schematic structural diagram of a pressure sensor according to an embodiment of the present invention;
fig. 17 is a schematic structural diagram of a pressure sensor according to an embodiment of the present invention;
fig. 18 is a schematic structural diagram of a pressure sensor according to an embodiment of the present invention;
fig. 19 is a schematic structural diagram of a pressure sensor according to an embodiment of the present invention.
Detailed Description
The embodiments of the present invention will be described in further detail with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of and not restrictive on the broad invention. It should be further noted that, for convenience of description, only some structures, not all structures, relating to the embodiments of the present invention are shown in the drawings.
Fig. 1 is a schematic structural diagram of a pressure sensor according to an embodiment of the present invention, and referring to fig. 1, the pressure sensor according to the embodiment of the present invention includes: a substrate 110 and a single crystal silicon piezoresistive element 120; substrate 110 includes first substrate layer 111, second substrate layer 112, and third substrate layer 113 arranged in a stack, with single crystal silicon piezoresistive element 120 disposed within third substrate layer 113.
Specifically, the substrate 110 may be a Silicon On Insulator (SOI) substrate, the materials of the first substrate layer 111 and the third substrate layer 113 in the substrate 110 are monocrystalline Silicon, the material of the second substrate layer 112 is Silicon dioxide, and the monocrystalline Silicon piezoresistive elements 120 are disposed in the third substrate layer 113, so as to reduce the volume of the pressure sensor. The monocrystalline silicon piezoresistive elements 120 comprise monocrystalline silicon materials, so that the monocrystalline silicon piezoresistive elements 120 can be directly manufactured by using the third substrate layer 113 without growing new monocrystalline silicon to manufacture the monocrystalline silicon piezoresistive elements 120, and the monocrystalline silicon piezoresistive elements 120 are arranged in the third substrate layer 113, so that the manufacturing process of the pressure sensor can be simplified, and the manufacturing efficiency of the pressure sensor can be improved. The monocrystalline silicon piezoresistive element 120 is made of monocrystalline silicon material, so that the sensitivity of the pressure sensor can be improved, and the monocrystalline silicon has high temperature resistance, so that the pressure sensor can still have high sensitivity even if the pressure sensor works in a high-temperature environment. The third substrate layers 113 are disposed on both the left and right sides of the single crystal silicon piezoresistive element 120, and the third substrate layers 113 serve as a support to prevent the single crystal silicon piezoresistive element 120 from being damaged by the pressure of the left and right sides. Further, first substrate layer 111 includes a through-hole region 130, through-hole region 130 is a cavity of the pressure sensor, and cross-sectional shape of through-hole region 130 is circular or polygonal. The high temperature in the embodiment of the present invention means a temperature of 150 c or more.
According to the pressure sensor provided by the embodiment of the invention, the monocrystalline silicon piezoresistive element is arranged in the third substrate layer, and the third substrate layer is made of monocrystalline silicon, so that the monocrystalline silicon piezoresistive element can be directly manufactured by using the third substrate layer, and the process steps are simplified. The pressure sensor provided by the embodiment of the invention can still ensure higher sensitivity of the pressure sensor in a high-temperature environment.
Optionally, with continued reference to FIG. 1, the thickness of the single crystal silicon piezoresistive element 120 is equal to the thickness of the third substrate layer 113.
Specifically, the material of the third substrate layer 113 is monocrystalline silicon, and the monocrystalline silicon piezoresistive element 120 can be directly fabricated on the basis of the third substrate layer 113 without growing new monocrystalline silicon to increase the thickness of the monocrystalline silicon piezoresistive element 120, so that the monocrystalline silicon piezoresistive element 120 and the third substrate layer 113 are kept equal in thickness, the monocrystalline silicon does not need to be grown again to increase the thickness of the monocrystalline silicon piezoresistive element 120, and the third substrate layer 113 does not need to be etched to make the thickness of the monocrystalline silicon piezoresistive element 120 smaller than the thickness of the third substrate layer 113, thereby simplifying the fabrication process of the pressure sensor.
Optionally, the thickness range of the third substrate layer is 0.2-5 μm.
Specifically, since the thickness of the third substrate layer is equal to the thickness of the single-crystal silicon piezoresistive element, the thickness of the single-crystal silicon piezoresistive element is also in the range of 0.2 to 5 μm, and the thickness of the single-crystal silicon piezoresistive element is relatively thin, so that the sensitivity of the pressure sensor can be further improved.
Optionally, fig. 2 is a schematic structural diagram of another pressure sensor provided in an embodiment of the present invention, and referring to fig. 2, the pressure sensor further includes a first insulating layer 140, where the first insulating layer 140 is disposed on the same layer as the third substrate layer 113, and the first insulating layer 140 is disposed between the single-crystal silicon piezoresistive element 120 and the third substrate layer 113.
Specifically, the material of third substrate layer 113 is monocrystalline silicon, so that third substrate layer 113 has the capability of transmitting signals, monocrystalline silicon piezoresistive element 120 is used for sensing the change of the external pressure and transmitting the detected pressure signals, in order to prevent the pressure signals from being transmitted to third substrate layer 113, first insulating layer 140 is disposed between monocrystalline silicon piezoresistive element 120 and third substrate layer 113, the material of first insulating layer 140 has insulating property, for example, the material of first insulating layer 140 may be silicon dioxide, and the material of first insulating layer 140 may be the same as the material of second substrate layer 112.
Optionally, fig. 3 is a schematic structural diagram of another pressure sensor provided in an embodiment of the present invention, and referring to fig. 3, the pressure sensor further includes a second insulating layer 150, where the second insulating layer 150 is disposed on a side of the third substrate layer 113 away from the second substrate layer 112; the second insulating layer 150 covers at least the single-crystal silicon piezoresistive elements 120.
Specifically, the second insulating layer 150 in FIG. 3 covers only the single crystal silicon piezoresistive elements 120. The second insulating layer 150 is used to isolate the single-crystal silicon piezoresistive elements 120 and prevent leakage current from the single-crystal silicon piezoresistive elements 120 during operation. The second insulating layer 150 is made of silicon dioxide, which has high temperature resistance and can increase the operating temperature range of the pressure sensor. Fig. 4 is a schematic structural diagram of a pressure sensor provided by an embodiment of the present invention, and referring to fig. 4, a second insulating layer 150 in fig. 4 covers a single-crystal silicon piezoresistive element 120, a first insulating layer 140 and a third substrate layer 113.
Optionally, fig. 5 is a schematic structural diagram of a pressure sensor according to an embodiment of the present invention, and referring to fig. 5, the pressure sensor further includes an epitaxial film 160; the epitaxial film layer 160 is disposed on a side of the second insulating layer 150 away from the second substrate layer 112; the epitaxial film layer 160 covers the second insulating layer 150.
Specifically, the epitaxial layer 160 is used to support the single-crystal silicon piezoresistive element 120, and the material of the epitaxial layer 160 may be fully polysilicon or partially polysilicon and partially single-crystal silicon, which is determined according to the position of the second insulating layer 150. Illustratively, with continued reference to FIG. 5, when second insulating layer 150 covers third substrate layer 113, first insulating layer 140, and single-crystal silicon piezoresistive element 120, epitaxial film layer 160 completely covers second insulating layer 150, and epitaxial film layer 160 is composed entirely of polysilicon. Referring to fig. 6, when the second insulating layer 150 covers only the single-crystal silicon piezoresistive element 120, an epitaxial film layer 160 covers the third substrate layer 113, the first insulating film layer 140 and the second insulating film layer 150, the material of the epitaxial film layer 160 covering the third substrate layer 113 is single-crystal silicon, and the material of the epitaxial film layer 160 covering the first insulating layer 140 and the second insulating layer 150 is polysilicon. The material of the third substrate layer 113 is monocrystalline silicon, and therefore, the material of the epitaxial film layer 160 covering the third substrate layer 113 is set to monocrystalline silicon to facilitate the growth of the epitaxial film layer 160.
Alternatively, fig. 7 is a schematic structural diagram of another pressure sensor provided in the embodiment of the present invention, and referring to fig. 7, a single-crystal silicon piezoresistive element includes a piezoresistive sensing portion 121 and a piezoresistive connecting portion 122; the piezoresistive sensing portion 121 is adjacent to the piezoresistive connecting portion 122; the piezoresistive sensing elements 121 and the piezoresistive connecting elements 122 are disposed on a side of the second substrate layer 112 away from the first substrate layer 111.
Specifically, the piezoresistive sensing part 121 is configured to detect a pressure change from the outside and transmit a detected pressure signal to the piezoresistive connecting part 122, and the piezoresistive connecting part 122 is configured to transmit the pressure signal. The perpendicular projection of the piezoresistive sensing portion 121 is located in the through hole region 130, that is, the through hole region 130 enables the piezoresistive sensing portion 121 to be suspended, and when the external pressure changes, the piezoresistive sensing portion 121 can sense the pressure change sensitively.
Optionally, with continued reference to fig. 7, the pressure sensor further includes a metal electrode 170; the metal electrode 170 is connected to the piezoresistive connection portions 122 through the epitaxial film layer 160 and the second insulating layer 150.
Specifically, the piezoresistive sensing portion 121 is configured to sense a change of an external pressure, convert the change of the external pressure into a pressure signal, and transmit the pressure signal to the pressure connection portion 122, the metal electrode 170 is connected to the piezoresistive connection portion 122, the metal electrode 170 is configured to transmit the pressure signal received by the piezoresistive connection portion 122, and the metal electrode 170 is further configured to supply power to the single-crystal silicon piezoresistive element.
Fig. 8 is a schematic flowchart of a method for manufacturing a pressure sensor according to an embodiment of the present invention, and referring to fig. 8, the method for manufacturing a pressure sensor includes the following steps:
210. providing a substrate, wherein the substrate comprises a first substrate layer, a second substrate layer and a third substrate layer which are arranged in a stacked mode;
specifically, fig. 9 is a schematic structural diagram of a substrate according to an embodiment of the present invention, and referring to fig. 9, a material of third substrate layer 113 is monocrystalline silicon, and a monocrystalline silicon piezoresistive element is formed on third substrate layer 113.
220. A single crystal silicon piezoresistive element is formed within the third substrate layer.
According to the manufacturing method of the pressure sensor provided by the embodiment of the invention, the monocrystalline silicon piezoresistive element is arranged in the third substrate layer, and the third substrate layer is made of monocrystalline silicon, so that the manufacturing of the monocrystalline silicon piezoresistive element can be directly carried out by using the third substrate layer, and the process steps are simplified. The manufacturing method of the pressure sensor provided by the embodiment of the invention can still ensure that the pressure sensor has higher sensitivity in a high-temperature environment.
Optionally, fig. 10 is a schematic flow chart of a manufacturing method of another pressure sensor according to an embodiment of the present invention, where forming a single-crystal silicon piezoresistive element in a third substrate layer includes:
221. carrying out first photoetching, first developing and first ion implantation in the third substrate layer to form a piezoresistive connecting part of the monocrystalline silicon piezoresistive element;
specifically, after step 221, the schematic structural diagram of the pressure sensor is shown in fig. 11.
222. And carrying out second photoetching, second developing and second ion implantation on the third substrate layer to form a piezoresistive sensing part of the monocrystalline silicon piezoresistive element.
Specifically, after step 222, a schematic structural diagram of the pressure sensor is shown in fig. 12. The ions injected by the first ion injection and the second ion injection are both boron ions, and the concentration of the ions injected by the first ion injection is greater than that of the ions injected by the second ion injection, so that the resistance of the piezoresistive connecting part is greater than that of the piezoresistive sensing part.
Fig. 13 is a schematic flow chart illustrating a method for fabricating a pressure sensor according to another embodiment of the present invention, and referring to fig. 13, after forming a single-crystal silicon piezoresistive element in a third substrate layer, the method further includes the following steps:
230. carrying out third photoetching, third developing and silicon etching on the third substrate layer to form a first groove;
specifically, after step 230, the schematic structure of the pressure sensor is shown in fig. 14.
240. And growing a first insulating film layer in the groove.
Specifically, after step 240, a schematic structural diagram of the pressure sensor is shown in fig. 15.
250. Growing a second insulating film layer on the monocrystalline silicon piezoresistive element, the first insulating film layer and one side of the third substrate layer, which is far away from the second substrate layer;
specifically, after step 250, the schematic structure of the pressure sensor is shown in fig. 16.
260. Growing an epitaxial film on one side of the second insulating film layer far away from the second substrate layer;
specifically, the epitaxial thin film is made of polysilicon, and after step 260, the structural schematic diagram of the pressure sensor is shown in fig. 17.
270. Etching through the epitaxial film layer and the second insulating film layer to form a second groove;
specifically, after step 270, a schematic structural diagram of the pressure sensor is shown in fig. 18.
280. Arranging a metal electrode in the second groove;
specifically, after step 280, the schematic structure of the pressure sensor is shown in fig. 19.
290. A via region is etched through the first substrate.
Specifically, after step 290, a schematic structural diagram of the pressure sensor is shown in fig. 7.
In the embodiments of the present invention, a method for manufacturing a pressure sensor is described by taking an example in which a first insulating film layer, a single-crystal silicon piezoresistive element, and a third substrate layer are covered by a second insulating film layer.
The manufacturing method of the pressure sensor provided by the embodiment of the invention and the pressure sensor provided by any embodiment of the invention belong to the same inventive concept, and have corresponding beneficial effects.
It should be noted that the foregoing is only a preferred embodiment of the present invention and the technical principles applied. Those skilled in the art will appreciate that the embodiments of the present invention are not limited to the specific embodiments described herein, and that various obvious changes, adaptations, and substitutions are possible, without departing from the scope of the embodiments of the present invention. Therefore, although the embodiments of the present invention have been described in more detail through the above embodiments, the embodiments of the present invention are not limited to the above embodiments, and many other equivalent embodiments may be included without departing from the concept of the embodiments of the present invention, and the scope of the embodiments of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A pressure sensor, comprising: a substrate and a single crystal silicon piezoresistive element;
the substrate comprises a first substrate layer, a second substrate layer and a third substrate layer which are arranged in a stacked mode, and the single-crystal silicon piezoresistive elements are arranged in the third substrate layer.
2. The pressure sensor of claim 1, wherein the thickness of the single crystal silicon piezoresistive element is equal to the thickness of the third substrate layer.
3. The pressure sensor of claim 2, wherein the thickness of the third substrate layer is in the range of 0.2-5 μm.
4. The pressure sensor of any of claims 1-3, further comprising a first insulating layer disposed in a same layer as the third substrate layer, the first insulating layer disposed between the single-crystal silicon piezoresistive element and the third substrate layer.
5. The pressure sensor of claim 4, further comprising a second insulating layer disposed on a side of the third substrate layer distal from the second substrate layer; the second insulating layer covers at least the single-crystal silicon piezoresistive element.
6. The pressure sensor of claim 5, further comprising an epitaxial film layer;
the epitaxial film layer is arranged on one side, far away from the second substrate layer, of the second insulating layer;
the epitaxial film layer covers the second insulating layer.
7. The pressure sensor of claim 6, wherein the single crystal silicon piezoresistive element comprises a piezoresistive sensing portion and the piezoresistive connecting portion;
the piezoresistive sensing part is adjacent to the piezoresistive connecting part;
the piezoresistive sensing part and the piezoresistive connecting part are both arranged on one side, far away from the first substrate layer, of the second substrate layer.
8. The pressure sensor of claim 7, further comprising a metal electrode;
the metal electrode penetrates through the epitaxial film layer and the second insulating layer and is connected with the piezoresistive connecting part.
9. A method of making a pressure sensor, comprising:
providing a substrate, wherein the substrate comprises a first substrate layer, a second substrate layer and a third substrate layer which are arranged in a stacked mode;
a single crystal silicon piezoresistive element is formed within the third substrate layer.
10. The method of fabricating of claim 9, wherein forming a single crystal silicon piezoresistive element in the third substrate layer comprises:
and carrying out first photoetching, first developing and first ion implantation on the third substrate layer to form a piezoresistive connecting part of the monocrystalline silicon piezoresistive element, and carrying out second photoetching, second developing and second ion implantation on the third substrate layer to form a piezoresistive sensing part of the monocrystalline silicon piezoresistive element.
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