CN112886795B - Control circuit, power module and power converter of silicon carbide field effect tube - Google Patents
Control circuit, power module and power converter of silicon carbide field effect tube Download PDFInfo
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- CN112886795B CN112886795B CN202110280155.5A CN202110280155A CN112886795B CN 112886795 B CN112886795 B CN 112886795B CN 202110280155 A CN202110280155 A CN 202110280155A CN 112886795 B CN112886795 B CN 112886795B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
Abstract
The invention provides a control circuit, a power module and a power converter of a silicon carbide field effect tube, wherein the control circuit comprises: the power supply circuit, the driving resistor, the power supply starting circuit, the delay circuit and the third switching tube are sequentially connected, the power supply starting circuit is connected with the delay circuit, the power supply starting circuit and the delay circuit are jointly arranged between the power supply circuit and the third switching tube, and the power supply starting circuit outputs positive and negative voltages to control the third switching tube to be switched on or switched off.
Description
Technical Field
The invention belongs to the technical field of power electronics, and particularly relates to a control circuit of a silicon carbide field effect tube, a power module and a power converter.
Background
The statements in this section merely provide background information related to the present disclosure and may not necessarily constitute prior art.
The wide-bandgap silicon carbide power device has the characteristics of high temperature, high switching speed, low on-resistance and the like, has low switching loss and high switching frequency, and has obvious advantages of realizing high efficiency and high power density of a power electronic converter. The method has a huge application prospect in the field of new energy power generation, so that the research on the high-speed application technology of the silicon carbide power device has great significance.
However, the high switching speed of the silicon carbide power device also causes some problems for its application, and currently, in some documents, a driving manner that multiple control signals are used to control different switching tubes so as to further provide different driving voltages for the gates of the power device is adopted. However, this driving method cannot control the time interval between the driving signals, and the driving difficulty is high, which eventually results in a reduction in the switching speed of the silicon carbide power device, and thus cannot achieve its good performance advantage.
Therefore, the invention designs the driving circuit which has simple structure and control logic and is easy to realize, and can effectively control the signals of each switching tube. Thereby fully exerting and utilizing the excellent performance of the silicon carbide power device.
Disclosure of Invention
In order to solve the problems, the invention provides a control circuit of a silicon carbide field effect transistor, a power module and a power converter, which can give full play to the performance advantages of a SIC MOSFET high-speed switch, improve the driving voltage during turn-off and realize high-speed turn-off under the condition of not increasing the control difficulty.
According to some embodiments, the invention adopts the following technical scheme:
in a first aspect, the invention provides a control circuit of a silicon carbide field effect transistor, a power module and a power converter.
The utility model provides a control circuit of carborundum field effect transistor, includes power supply circuit, driving resistance, power supply starting circuit, delay circuit and third switch pipe, power supply circuit, driving resistance and the SIC MOSFET circuit of treating the control connect gradually, and power supply starting circuit connects delay circuit, and power supply starting circuit and delay circuit set up jointly between power supply circuit and third switch pipe, and the switching on or the shutoff of the positive and negative control third switch pipe of power supply starting circuit output voltage.
In a second aspect the invention provides a power module.
A switch tube of a power conversion circuit of the power module adopts the control circuit of the silicon carbide field effect tube to provide driving voltage.
In a third aspect the invention provides a power converter.
A power converter using the control circuit of the silicon carbide field effect transistor of the first aspect for providing a driving voltage for a switching tube in the converter.
Compared with the prior art, the invention has the beneficial effects that:
the invention adopts a two-level turn-off mode for switching on without increasing the control difficulty, thereby realizing rapid turn-off.
The invention adopts the parallel delay circuit to realize the adjustable switching time between two levels.
The invention has simple design and can reduce the switching loss and the conduction loss.
Advantages of additional aspects of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the invention and together with the description serve to explain the invention and not to limit the invention.
FIG. 1 is a schematic diagram of the circuit configuration of the present invention;
FIG. 2 is a schematic diagram of a half bridge circuit of the present invention;
FIG. 3 is a waveform of the drive resistor current when the invention is off;
FIG. 4 is a timing diagram of waveforms of the switching tubes of the present invention;
FIG. 5 is a timing diagram of SIC MOSFET gate waveforms in accordance with the present invention.
The specific implementation mode is as follows:
the invention is further described with reference to the following figures and examples.
It is to be understood that the following detailed description is exemplary and is intended to provide further explanation of the invention as claimed. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
Example one
The embodiment provides a control circuit of a silicon carbide field effect tube.
A control circuit for a silicon carbide field effect transistor, comprising: the power supply circuit, the driving resistor, the power supply starting circuit, the delay circuit and the third switching tube are sequentially connected, the power supply starting circuit is connected with the delay circuit, the power supply starting circuit and the delay circuit are jointly arranged between the power supply circuit and the third switching tube, and the power supply starting circuit outputs positive and negative voltages to control the third switching tube to be switched on or switched off.
In one or more embodiments, the delay circuit is used for controlling the on-time of the third switching tube.
In some embodiments, the power supply circuit may adopt a circuit configuration as shown in fig. 1, and includes a first power supply branch and a second power supply branch which are connected in parallel, where the first power supply branch includes a first power supply VC1 and a first switch tube Q1 which are sequentially connected in series, and the second power supply branch includes a second power supply VC2 and a second switch tube Q2 which are sequentially connected in series. The negative terminal of the first power source VC1 and the positive terminal of the second power source VC2 are connected to ground, respectively.
Specifically, the first switch tube Q1 and the second switch tube Q2 may respectively adopt N-channel field effect transistors, a drain of the first switch tube Q1 is connected to a positive terminal of the first power source VC1, a source of the first switch tube Q1 is connected to a drain of the second switch tube Q2, and a source of the second switch tube Q2 is connected to a negative terminal of the second power source VC 2.
Preferably, the middle point of the first power supply branch and the second power supply branch is connected with one end of a driving resistor R1, and the other end of the driving resistor R1 is connected with the grid of the SIC MOSFET circuit to be controlled.
Specifically, the source of the first switching tube Q1 and the drain of the second switching tube Q2 are commonly connected to one end of a driving resistor R1, and the other end of the driving resistor R1 is respectively connected to the drain of the third switching tube Q3 and the gate of the SIC MOSFET circuit to be controlled.
The power supply starting circuit comprises a second resistor, a third resistor, a fourth resistor, a fifth resistor, an operational amplifier and an external power supply, wherein the non-inverting input end of the operational amplifier is connected with one end of the third resistor and one end of the fifth resistor respectively, the inverting input end of the operational amplifier is connected with one end of the second resistor and one end of the fourth resistor respectively, the negative power supply end of the operational amplifier is grounded, the positive power supply end of the operational amplifier is connected with the external power supply, and the output end of the operational amplifier is connected with the other end of the fourth resistor and the input end of the delay circuit respectively.
Specifically, the power supply starting circuit comprises a second resistor R2, a third resistor R3, a fourth resistor R4 and a fifth resistor R5, an operational amplifier OP1 and an external power supply VCC, a non-inverting input terminal of the operational amplifier OP1 is connected to one end of a third resistor R3 and one end of a fifth resistor R5 respectively, an inverting input terminal of the operational amplifier OP1 is connected to one end of a second resistor R2 and one end of a fourth resistor R4 respectively, a negative power terminal of the operational amplifier OP1 is connected to ground, a positive power terminal of the operational amplifier OP1 is connected to the external power supply VCC, an output terminal of the operational amplifier OP1 is connected to the other end of the fourth resistor R4 and one end of a sixth resistor R6 respectively, the other end of the second resistor R2 is connected to a source of the first switch tube Q1, a drain of the second switch tube Q2 and one end of the drive resistor R1 respectively, and the other end of the third resistor R3 is connected to the other end of the drive resistor R1, a drain of the third switch tube Q3 and a gate of the SIC MOSFET circuit to be controlled.
Illustratively, the delay circuit comprises a sixth resistor R6 and a capacitor C1 which are connected in series, and the capacitor C1 is grounded. The other end of the sixth resistor R6 is connected to the gate of the third switching tube Q3 and one end of the capacitor C1, the other end of the capacitor C1 is connected to the other end of the fifth resistor R5, the source of the third switching tube Q3 and ground, and the source of the third switching tube Q3 is grounded.
R2, R3, R4, R5, OP1, and VCC form a power supply starting circuit, the voltage at the output end of the operational amplifier is obtained by subtracting the voltage at the front end of the driving resistor R1 from the voltage at the rear end of the driving resistor R1, the current waveform at both ends of the driving resistor R1 at the time of turn-off is as shown in fig. 3, and the voltage at both ends of the driving resistor R1 is proportional to the current at both ends thereof.
Sixth resistor R6 and capacitor C1Forming a delay circuit, wherein the delay time T:
T＝R6C1×ln[Vout×(Vout-Vt)]
wherein, VoutRepresenting the voltage value of the output end of the operational amplifier; vthThe switching-on voltage value of the third switching tube is represented; r6Represents the resistance value of the sixth resistor; c1Representing the capacitance value of the first capacitor.
The voltage at the output terminal of the operational amplifier can control the on and off of the third transistor Q3, so no additional control signal is needed to control the third transistor Q3.
Example two
The present embodiment provides a power module.
A switch tube of a power conversion circuit of the power module adopts a control circuit of a silicon carbide field effect tube to provide driving voltage.
Optionally, the power change circuit may be a full bridge circuit or a half bridge circuit, and the like, to implement rectification or inversion, and the switching tube may be a SIC MOSFET tube.
The present embodiment takes a half-bridge circuit as an example to illustrate the operation principle of the power module of the present embodiment, as shown in fig. 2 to 5.
Taking the upper tube as an example, at the moment when the upper tube S1_ H is turned on, the first switch tube Q1_ H is turned on, and the second switch tube Q2_ H is turned off, in this process, current rapidly flows through the first resistor R1_ H, so that the voltage at both ends of the R1_ H is rapidly raised, and a negative voltage is output to the delay circuit and the gate of the third switch tube Q3_ H through the signal output terminal of the operational amplifier circuit, so that the third switch tube continues to keep the off state, and the voltage from the gate of the upper tube S1_ H to the source is VC1_ H, so that the upper tube is rapidly turned on and kept at VC1_ H.
As shown in fig. 4 and 5, when the upper tube S1_ H is at the turn-off instant, the first switch Q1_ H is turned off, the second switch Q2_ H is turned on, and at this time, the current waveform diagram at the two ends of the first resistor R1_ H is shown in fig. 3, the voltage difference waveform diagram at the two ends of the first resistor R1_ H is also shown in fig. 3, the voltage difference at the two ends of the first resistor R1_ H is rapidly transmitted to the gate of the upper tube S1_ H, and the voltage from the gate to the source of the upper tube S1_ H is VC2_ H, so that the upper tube is rapidly turned off; meanwhile, the voltage difference value at two ends of the first resistor R1_ H outputs positive voltage to the delay circuit through the first operational amplifier circuit, after the delay time T, the voltage is transmitted to the grid electrode of the third switching tube Q3_ H, so that the third switching tube Q3_ H is switched on, at this time, the voltage between the grid electrode and the source electrode of the upper tube S1_ H is 0V, and the voltage between the grid electrode and the source electrode of the upper tube S1_ H is kept at 0V and enters a stable off state.
The invention provides a driving circuit which is applicable to quick turn-off of a silicon carbide power device and is simple and easy to realize. The turn-off speed of the whole driving circuit is improved, the turn-off loss is reduced, the service life of the silicon carbide power device is prolonged, and the advantages of the silicon carbide power device can be fully exerted.
The present embodiment provides a power converter.
The control circuit of the silicon carbide field effect transistor is used for providing driving voltage for a switching tube in the converter.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Although the embodiments of the present invention have been described with reference to the accompanying drawings, it is not intended to limit the scope of the present invention, and it should be understood by those skilled in the art that various modifications and variations can be made without inventive efforts by those skilled in the art based on the technical solution of the present invention.
Claims (6)
1. The control circuit of the silicon carbide field effect tube is characterized by comprising a power supply circuit, a driving resistor, a power supply starting circuit, a time delay circuit and a third switching tube, wherein the power supply circuit, the driving resistor and a SIC MOSFET circuit to be controlled are sequentially connected, the power supply starting circuit is connected with the time delay circuit, the power supply starting circuit and the time delay circuit are jointly arranged between the power supply circuit and the third switching tube, and the positive and negative of the output voltage of the power supply starting circuit control the third switching tube to be switched on or switched off;
the power supply circuit comprises a first power supply branch and a second power supply branch which are connected in parallel, the first power supply branch comprises a first power supply and a first switch tube which are sequentially connected in series, and the second power supply branch comprises a second power supply and a second switch tube which are sequentially connected in series;
the delay circuit comprises a sixth resistor and a capacitor which are sequentially connected in series, and the capacitor is grounded; the middle point between the sixth resistor and the capacitor is connected with the grid electrode of a third switching tube, and the drain electrode of the third switching tube is connected with the grid electrode of the SIC MOSFET circuit to be controlled;
the power supply starting circuit comprises a second resistor R2, a third resistor R3, a fourth resistor R4 and a fifth resistor R5, an operational amplifier OP1 and an external power supply VCC, a non-inverting input terminal of the operational amplifier OP1 is connected to one end of a third resistor R3 and one end of a fifth resistor R5 respectively, an inverting input terminal of the operational amplifier OP1 is connected to one end of a second resistor R2 and one end of a fourth resistor R4 respectively, a negative power terminal of the operational amplifier OP1 is connected to ground, a positive power terminal of the operational amplifier OP1 is connected to the external power supply VCC, an output terminal of the operational amplifier OP1 is connected to the other end of the fourth resistor R4 and one end of a sixth resistor R6 respectively, the other end of the second resistor R2 is connected to a source of the first switch tube Q1, a drain of the second switch tube Q2 and one end of the drive resistor R1 respectively, and the other end of the third resistor R3 is connected to the other end of the drive resistor R1, a drain of the third switch tube Q3 and a gate of the SIC MOSFET circuit to be controlled.
2. The silicon carbide field effect transistor control circuit according to claim 1, wherein the delay circuit is configured to control an on-time of the third switching tube.
3. The silicon carbide field effect transistor control circuit according to claim 1, wherein the negative terminal of the first power supply and the positive terminal of the second power supply are respectively connected to ground.
4. The control circuit of the SiC FET of claim 1, wherein the middle point of the first power supply branch and the second power supply branch is connected to one end of a driving resistor, and the other end of the driving resistor is connected to the gate of the SIC MOSFET circuit to be controlled.
5. A power module, characterized in that a switch tube of a power conversion circuit of the power module adopts the control circuit of the silicon carbide field effect tube of any one of claims 1-4 to provide a driving voltage.
6. A power converter, characterized in that the power converter adopts the control circuit of the silicon carbide field effect transistor as claimed in any one of claims 1-4 for providing a driving voltage for a switching tube in the converter.
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| CN202110280155.5A CN112886795B (en) | 2021-03-16 | 2021-03-16 | Control circuit, power module and power converter of silicon carbide field effect tube |
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| CN202110280155.5A CN112886795B (en) | 2021-03-16 | 2021-03-16 | Control circuit, power module and power converter of silicon carbide field effect tube |
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| CN112886795B true CN112886795B (en) | 2022-06-07 |
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| CN108683327A (en) * | 2018-06-12 | 2018-10-19 | 西北工业大学 | A kind of silicon carbide MOSFET driving circuit |
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| CN101917145B (en) * | 2010-09-09 | 2013-10-23 | 湖南南车时代电动汽车股份有限公司 | Soft start control method and controller |
| JP5777537B2 (en) * | 2012-02-17 | 2015-09-09 | 三菱電機株式会社 | Power device control circuit and power device circuit |
| CN106100297B (en) * | 2016-08-02 | 2018-08-31 | 北京交通大学 | Driving circuit based on silicon carbide MOSFET |
| CN107453739A (en) * | 2017-07-18 | 2017-12-08 | 广东美的制冷设备有限公司 | Drive Protecting Circuit, integrated circuit, IPM modules and the air conditioner of power switch pipe |
| CN109980905A (en) * | 2019-04-15 | 2019-07-05 | 湖南德雅坤创科技有限公司 | Clutter reduction circuit, driving circuit and the bridge converter of sic filed effect pipe |
| CN110535336A (en) * | 2019-09-26 | 2019-12-03 | 重庆市亿飞智联科技有限公司 | Delay switch driving circuit and system |
| CN111211762B (en) * | 2020-02-19 | 2023-07-21 | 湖南大学 | SiC MOSFET driving circuit with high turn-on performance |
| CN111404411B (en) * | 2020-02-26 | 2021-06-15 | 北京交通大学 | Three-level active driving circuit for inhibiting crosstalk |
| CN112910240B (en) * | 2021-01-22 | 2022-03-04 | 山东大学 | Variable grid voltage switching-on control circuit, power module and power converter |
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| CN108683327A (en) * | 2018-06-12 | 2018-10-19 | 西北工业大学 | A kind of silicon carbide MOSFET driving circuit |
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Effective date of registration: 20220809 Address after: Room 201, Scientific Research Building, South Side of North Ring Expressway, North of Mili Road, Huaiyin District, Jinan City, Shandong Province, 250000 Patentee after: Yuanshan (Jinan) Electronic Technology Co.,Ltd. Address before: 250061, No. ten, No. 17923, Lixia District, Ji'nan City, Shandong Province Patentee before: SHANDONG University |