CN112886259B - Adjustable reflective linear polarization controller and method - Google Patents
Adjustable reflective linear polarization controller and method Download PDFInfo
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- CN112886259B CN112886259B CN202110036825.9A CN202110036825A CN112886259B CN 112886259 B CN112886259 B CN 112886259B CN 202110036825 A CN202110036825 A CN 202110036825A CN 112886259 B CN112886259 B CN 112886259B
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- 230000010287 polarization Effects 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 57
- 229910052751 metal Inorganic materials 0.000 claims abstract description 57
- 239000004642 Polyimide Substances 0.000 claims abstract description 18
- 229920001721 polyimide Polymers 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 32
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 20
- 239000010931 gold Substances 0.000 claims description 20
- 229910052737 gold Inorganic materials 0.000 claims description 20
- 238000005286 illumination Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 28
- 238000006243 chemical reaction Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000010953 base metal Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses an adjustable reflection type linear polarization controller and a method. The terahertz wave detector comprises a terahertz wave input end and N multiplied by N unit structures, wherein N is a natural number; the N multiplied by N unit structures are periodically arranged on a plane vertical to the input direction of the terahertz wave, and each unit structure comprises a top layer metal structure, a polyimide dielectric layer and a substrate metal plate; wherein, top layer metallic structure is located polyimide dielectric layer top, top layer metallic structure form by two open ring, two open-ended square ring, rectangle metalwork and the combination of rectangle unit, the opening direction of two open ring and two open-ended square ring is located vice diagonal, connects two open ring and two open-ended square ring through the rectangle metalwork that is located on the main diagonal, the opening part of two open-ended square ring of rectangle unit embedding is located the center of metallic structure layer, one deck metal sheet is plated to the below of polyimide dielectric layer. The adjustable reflection type linear polarization controller has the advantages of simple and compact structure, convenience in manufacturing and adjustment, and can meet the application requirements of terahertz wave systems.
Description
Technical Field
The invention relates to the technical field of terahertz wave application, in particular to an adjustable reflection type linear polarization controller and a method.
Background
The terahertz wave is an electromagnetic wave with the frequency of 0.1-10 THz and the wavelength of 3000-30 μm, and is superposed with the millimeter wave in a long wave band and superposed with the infrared ray in a short wave band, and the terahertz wave occupies a special position in an electromagnetic wave spectrum. Therefore, the terahertz technology has wide application prospects in the fields of high-speed communication, imaging and the like. A terahertz wave linear polarization controller, which is one of important devices for terahertz wave control, has attracted extensive attention of researchers at home and abroad. In recent years, various terahertz filters, terahertz switches, terahertz modulators, and the like have been developed and reported. However, in general, once the structural size parameters of the terahertz devices are optimized, the performance of the terahertz devices is fixed and cannot be regulated, and the application and development of the terahertz technology are severely limited, so that the design of an adjustable reflective linear polarization controller has great significance. The invention provides an adjustable reflection type linear polarization controller, which changes the illumination intensity of applied pump light by designing a microstructure and utilizing photosensitive silicon to realize the function of adjusting terahertz wave polarization. The device has the advantages of simple structure, excellent performance and flexible control.
Disclosure of Invention
The invention provides an adjustable reflection type linear polarization controller for overcoming the defects of the prior art.
In order to achieve the purpose, the technical scheme of the invention is as follows:
an adjustable reflection type linear polarization controller comprises an NxN unit structures, wherein N is a natural number; the NxN unit structures are periodically arranged on a plane vertical to the input direction of the terahertz wave; each unit structure comprises a top layer metal structure, a polyimide dielectric layer and a substrate metal plate, and the top surface of each unit structure is used as a terahertz wave input end; the top layer metal structure is located on the square upper surface of the polyimide medium layer and is formed by combining a double-opening circular ring, a double-opening square ring, a rectangular metal piece and rectangular units, the double-opening circular ring is a circular ring with two openings, the double-opening square ring is a square ring with two openings, the openings of the double-opening circular ring and the openings of the double-opening square ring are located on an auxiliary diagonal line of the square upper surface, the double-opening circular ring and the double-opening square ring are connected through the two rectangular metal pieces located on a main diagonal line of the square upper surface, the two rectangular units are respectively embedded into the two openings of the double-opening square ring, and the whole top layer metal structure is in mirror symmetry along the main diagonal line and the auxiliary diagonal line; a layer of metal plate is plated below the polyimide dielectric layer.
The specific parameters of each part in the scheme can adopt the following preferable modes:
preferably, the front view of each unit structure is square, and the side length of the square is 90-110 μm.
Preferably, the length and width of the polyimide layer are both 90-110 μm, and the thickness is 35-40 μm.
Preferably, the substrate metal plate is made of gold, the length and the width of the substrate metal plate are both 90-110 micrometers, and the thickness of the substrate metal plate is 0.1-0.5 micrometer.
Preferably, the top layer metal structure is made of gold, the length and the width of the top layer metal structure are both 90-110 micrometers, and the thickness of the top layer metal structure is 0.1-0.5 micrometer.
Preferably, the inner radius of the double-opening circular ring is 40-46 mu m, the width of the circular ring is 3-7 mu m, and the material is gold; each opening on the double-opening circular ring has a length of 6-10 μm and a width of 4-6 μm.
Preferably, the length of the outer edge of the square double-opening square ring is 28-32 mu m, the width of the square ring is 3-7 mu m, and the square ring is made of gold; each opening on the rectangular double-opening square ring has a length of 6-10 μm and a width of 4-6 μm.
Preferably, each rectangular metal piece is 26-30 microns long, 3-7 microns wide and made of gold.
Preferably, each rectangular unit is 6-10 μm in length and 4-6 μm in width, and the material is photosensitive silicon.
The invention also provides an adjustable reflection type linear polarization control method using the adjustable reflection type linear polarization controller in any scheme, which comprises the following specific steps: when terahertz waves are input from a terahertz wave input end, the terahertz waves are reflected by the N multiplied by N unit structures, and by utilizing the variable conductivity characteristic of the photosensitive silicon made of the tunable material, the conductivity of the photosensitive silicon is changed by applying pump light with different illumination intensities to the rectangular unit, so that the polarization state is changed; by selecting the illumination intensity of the pump light, photosensitive silicon with different conductivities is obtained, so that the adjustability of the reflective linear polarization controller is realized.
The adjustable reflection type linear polarization controller has the advantages of simple and compact structure, convenience in manufacturing and adjustment, and can meet the application requirements of terahertz wave systems.
Drawings
Fig. 1 is a two-dimensional plan view and a three-dimensional structural unit diagram of an adjustable reflective linear polarization controller.
Fig. 2 is a top metal structure diagram of the tunable reflective linear polarization controller.
FIG. 3 is a graph of polarization conversion PCR of photosensitive silicon at different conductivities for a tunable reflective linear polarization controller.
Fig. 4 is a graph of the surface current distribution diagram of the top metal structure, the substrate metal plate and the magnetic field energy of the top metal structure at a resonance frequency f of 0.665THz when the conductivity of the photosensitive silicon is 0S/m.
FIG. 5 shows the tunable reflective linear polarization controller at the photosensitive silicon conductivities of 0S/m, 800S/m, 3000S/m and 2 × 105Plot of polarization conversion ratio PCR at S/m.
Detailed Description
In one embodiment of the present invention, as shown in fig. 1-2, an adjustable reflective linear polarization controller is provided, which includes nxn unit structures 3, where N is a natural number. The N × N unit structures 3 are periodically arranged on a plane perpendicular to the terahertz wave input direction, forming a continuous plane. Each unit structure 3 comprises a top layer metal structure 2, a polyimide dielectric layer 4 and a substrate metal plate 5 which are sequentially stacked from top to bottom, and the top surface of each unit structure 3 serves as a terahertz wave input end 1. Wherein each unit structure 3 has the following specific structure: the top layer metal structure 2 is located on the square upper surface of the polyimide dielectric layer 4, and the top layer metal structure 2 is formed by combining a double-opening circular ring 7, a double-opening square ring 9, two rectangular metal pieces 8 and two rectangular units 10. The double-opening circular ring 7 is a circular ring with two openings, the double-opening square ring 9 is a square ring with two openings, and the ring bodies of the double-opening circular ring and the double-opening square ring have certain width. For convenience of description, in the square upper surface of the polyimide dielectric layer 4 shown in fig. 2, a diagonal line from top left to bottom right is defined as a main diagonal line, and a diagonal line from bottom left to top right is defined as a sub diagonal line. The openings of the double-opening circular ring 7 and the double-opening square ring 9 are positioned on the secondary diagonal line of the upper surface of the square. The double-opening circular ring 7 and the double-opening square ring 9 are connected through two rectangular metal pieces 8 positioned on the main diagonal line of the upper surface of the square, and the two rectangular metal pieces 8 are respectively positioned on two sides of the double-opening square ring 9. Two rectangular units 10 are respectively embedded in and just fill the two openings of the double-opening square ring 9. The entire top layer metal structure 2 is in mirror symmetry along both the aforementioned major and minor diagonals. In addition, a metal plate 5 is plated below the polyimide dielectric layer 4.
The specific materials and parameters of each component in the adjustable reflective linear polarization controller are as follows: the front view of each unit structure 3 is square, that is, the shape of the unit structure is square under the viewing angle along the input direction of the terahertz wave, and the side length of the square is 90-110 μm. The length and width of the polyimide layer 4 are both 90-110 μm, and the thickness is 35-40 μm. The substrate metal plate 5 is made of gold, the length and the width of the substrate metal plate are both 90-110 mu m, and the thickness of the substrate metal plate is 0.1-0.5 mu m. The top layer metal structure 2 is made of gold, the length and the width of the top layer metal structure are both 90-110 mu m, and the thickness of the top layer metal structure is 0.1-0.5 mu m. The inner radius of the double-opening circular ring 7 is 40-46 mu m, the width of the circular ring is 3-7 mu m, and the material is gold; each opening on the double-opening ring 7 is 6-10 μm in length and 4-6 μm in width. The length of the outer edge of the rectangular double-opening square ring 9 is 28-32 mu m, the width of the square ring is 3-7 mu m, and the square ring is made of gold; each opening on the rectangular double-opening square ring 9 has a length of 6-10 μm and a width of 4-6 μm. The rectangular metal piece 8 is 26-30 μm long and 3-7 μm wide and is made of gold. Each rectangular unit 10 has a length of 6-10 μm and a width of 4-6 μm, and is made of photosensitive silicon.
Based on the adjustable reflection type linear polarization controller, an adjustable reflection type linear polarization control method can be further provided, and the specific method comprises the following steps: when terahertz waves are input from the terahertz wave input end 1, the terahertz waves are reflected by the N multiplied by N unit structures 3, and by utilizing the variable conductivity characteristic of the photosensitive silicon made of the tunable material, the conductivity of the photosensitive silicon is changed by applying pump light with different illumination intensities to the rectangular unit 10, so that the polarization state is changed; by selecting the illumination intensity of the pump light, photosensitive silicon with different conductivities is obtained, so that the adjustability of the reflective linear polarization controller is realized.
Of course, the specific illumination intensity of the pump light needs to be selected according to the device characteristics to be finally achieved, and is not limited.
The following describes a specific technical effect of the adjustable reflective linear polarization controller by embodiments.
Example 1
In this embodiment, the structure and the shapes of the components of the adjustable reflective linear polarization controller are as described above, and therefore are not described in detail. However, the specific parameters of each component are as follows:
each unit structure 3 has a square front view with a side of 100 μm. The polyimide layer 4 has a length and width of 100 μm and a thickness of 35 μm. The base metal plate 5 is made of gold, 100 μm in length and width, and 0.4 μm in thickness. The top metal structure 2 is made of gold, and has a length and width of 100 μm and a thickness of 0.4 μm. The inner radius of the double-opening circular ring 7 is 43 mu m, the width of the circular ring is 5 mu m, and the material is gold; each opening of the double-opening ring 7 has a length of 8 μm and a width of 5 μm. The outer side length of the rectangular double-opening square ring 9 is 30 micrometers, the width of the square ring is 5 micrometers, and the square ring is made of gold; each opening on the rectangular double-opening square ring 9 had a length of 8 μm and a width of 5 μm. The rectangular metal piece 8 was 28 μm in length and 5 μm in width and was made of gold. Each rectangular cell 10 is 8 μm long and 5 μm wide and the material is photosensitive silicon.
Due to the existence of the linear polarization controller substrate metal plate, the terahertz waves cannot be transmitted. When the terahertz wave input end is input, the terahertz wave is reflected by the N multiplied by N unit structure, and the variable conductivity characteristic of the photosensitive silicon of the tunable material is utilized. By applying pump light of different illumination intensities to the rectangular cells of photosensitive silicon, the conductivity of the photosensitive silicon changes, thereby causing a change in polarization state. Photosensitive silicon with different conductivities is obtained by selecting the specific illumination intensity of the pump light, so that the adjustability of the reflective linear polarization controller is realized.
In order to verify the adjustable linear polarization function, the invention designs an adjustable reflection type terahertz wave linear polarization controller, and the performance index can be calculated through CST STUDIO SUITE 2019 software. FIG. 3 is a graph of polarization conversion PCR of photosensitive silicon at different conductivities for a tunable reflective linear polarization controller. In the absence of pump light, thisWhen the conductivity sigma of photosensitive silicon in the top layer metal structure is 0S/m, the conversion rate curve has four resonance peaks, and resonance frequency points are respectively 0.665THz, 0.82THz, 1.02THz and 1.5 THz; under the condition of irradiation of pumping light, the conductivity of the photosensitive silicon changes, and the conductivity of the photosensitive silicon becomes larger along with the increase of the illumination intensity, so that the polarization conversion rate PCR curve of the linear polarization controller also changes. Fig. 4 is a graph of the surface current distribution of the top metal structure, the substrate metal plate, and the magnetic field energy of the top metal structure at a frequency point where the surface current of the top metal structure is concentrated on a circular ring and the current flow direction thereof is opposite to the current flow direction of the substrate metal plate, when the conductivity σ of the photoconductive silicon is 0S/m, and the current ring is formed by the polyimide dielectric layer in the middle to generate magnetic resonance, and the energy distribution of the magnetic field energy graph corresponds to the surface current distribution. FIG. 5 shows the tunable reflective linear polarization controller at the photosensitive silicon conductivities of 0S/m, 600S/m, 3000S/m and 2 × 105Plot of polarization conversion ratio PCR at S/m. It is clear from fig. 5 (a), (b), (c), (d) that the conductivity of the photosensitive silicon becomes large, the collapse of the polarization conversion ratio PCR curve is flattened, and the second resonance peak is collapsed until 3 resonance peaks are formed. When the electrical conductivity of the photosensitive silicon is 0S/m and 300S/m, the polarization conversion rate PCR of the linear polarization controller is more than 85% in the frequency range of 0.58 THz-0.85 THz and 0.93 THz-1.48 THz; when the electrical conductivity of the photosensitive silicon is 3000S/m, the polarization conversion rate is more than 80% in the frequency band of 0.6 THz-1.59 THz; when the conductivity of the photosensitive silicon is 2 × 105S/m, and the polarization conversion rate is more than 74% in the frequency band of 0.56 THz-1.6 THz. Therefore, the adjustable function of the linear polarization controller is realized by changing the illumination intensity of the pump light so as to change the conductivity of the photosensitive silicon.
Claims (10)
1. An adjustable reflection type linear polarization controller is characterized by comprising N multiplied by N unit structures (3), wherein N is a natural number; the NxN unit structures (3) are periodically arranged on a plane vertical to the input direction of the terahertz wave; each unit structure (3) comprises a top layer metal structure (2), a polyimide dielectric layer (4) and a substrate metal plate (5), and the top surface of each unit structure (3) is used as a terahertz wave input end (1); wherein the top layer metal structure (2) is positioned on the square upper surface of the polyimide dielectric layer (4), the top layer metal structure (2) consists of a double-opening circular ring (7) and a double-opening square ring (9), the square structure comprises a rectangular metal piece (8) and rectangular units (10), wherein a double-opening ring (7) is a ring with two openings, a double-opening square ring (9) is a square ring with two openings, the openings of the double-opening ring (7) and the double-opening square ring (9) are both positioned on an auxiliary diagonal line of the upper surface of the square, the double-opening ring (7) and the double-opening square ring (9) are connected through the two rectangular metal pieces (8) positioned on a main diagonal line of the upper surface of the square, the two rectangular units (10) are respectively embedded into two openings of the double-opening square ring (9), and the whole top layer metal structure (2) is in mirror symmetry along the main diagonal line and the auxiliary diagonal line; a layer of metal plate (5) is plated below the polyimide dielectric layer (4);
the rectangular unit (10) is made of photosensitive silicon.
2. An adjustable reflective linear polarization controller according to claim 1, wherein each unit structure (3) has a square front view, and the side length of the square is 90 to 110 μm.
3. The adjustable reflective linear polarization controller of claim 1, wherein the polyimide dielectric layer (4) has a length and width of 90 to 110 μm and a thickness of 35 to 40 μm.
4. The tunable reflective linear polarization controller of claim 1, wherein the substrate metal plate (5) is made of gold, has a length and width of 90 to 110 μm, and has a thickness of 0.1 to 0.5 μm.
5. The tunable reflective linear polarization controller of claim 1, wherein the top metal structure (2) is made of gold, has a length and width of 90 to 110 μm, and has a thickness of 0.1 to 0.5 μm.
6. The tunable reflective linear polarization controller of claim 1, wherein the inner radius of the double-opening ring (7) is 40-46 μm, the width of the ring is 3-7 μm, and the material is gold; each opening on the double-opening ring (7) is 6-10 μm in length and 4-6 μm in width.
7. The tunable reflective linear polarization controller of claim 1, wherein the outer edge of the double-open square ring (9) has a length of 28 to 32 μm, the width of the square ring is 3 to 7 μm, and the material is gold; each opening on the double-opening square ring (9) is 6-10 μm in length and 4-6 μm in width.
8. The tunable reflective linear polarization controller of claim 1, wherein each of the rectangular metal members (8) has a length of 26 to 30 μm and a width of 3 to 7 μm, and is made of gold.
9. The tunable reflective linear polarization controller of claim 1, wherein each of the rectangular units (10) has a length of 6 to 10 μm and a width of 4 to 6 μm.
10. An adjustable reflective linear polarization control method using the adjustable reflective linear polarization controller according to claim 1, wherein when a terahertz wave is input from the terahertz wave input terminal (1), the terahertz wave is reflected by the N × N unit structures (3), and by using the variable conductivity characteristic of photosensitive silicon which is a tunable material, the conductivity of the photosensitive silicon is changed by applying pump light of different illumination intensities to the rectangular units (10), thereby causing a change in the polarization state; by selecting the illumination intensity of the pump light, photosensitive silicon with different conductivities is obtained, so that the adjustability of the reflective linear polarization controller is realized.
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| CN113764961B (en) * | 2021-08-26 | 2022-11-25 | 中国计量大学 | Small hemispherical structure terahertz dual-function device and method thereof |
| CN113922074A (en) * | 2021-10-08 | 2022-01-11 | 中国计量大学 | Terahertz controller with variable functions |
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