CN112873074B - Production method of wax-free pad for polishing - Google Patents
Production method of wax-free pad for polishing Download PDFInfo
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- CN112873074B CN112873074B CN202110259829.3A CN202110259829A CN112873074B CN 112873074 B CN112873074 B CN 112873074B CN 202110259829 A CN202110259829 A CN 202110259829A CN 112873074 B CN112873074 B CN 112873074B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/009—Tools not otherwise provided for
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Abstract
The invention discloses a production method of a wax-free pad for polishing, which comprises a base chassis, wafer placing holes, a clamping pad and a wax-free adsorption pad, wherein the surface of the base chassis is provided with at least one wafer placing hole, the wafer placing hole is internally provided with the wax-free adsorption pad for adsorbing a wafer, and at least one layer of clamping pad is arranged between the wax-free adsorption pad and the inner bottom of the wafer placing hole. And the production method of the wax-free pad comprises the following steps: forming a base chassis; and B, step B: processing a wafer placing hole; and C: preparing and molding a clamping pad and a wax-free adsorption pad; step D: and assembling without a wax pad. The composite resin is produced by reacting the epoxy resin with the polyurethane prepolymer, and the composite resin is used as the adhesive layer, so that the adhesive layer has the characteristics of the epoxy resin and the polyurethane resin, is high in viscosity and elasticity, can be well bonded with the carbon fiber layer and the adsorption layer, and avoids layering of a wax-free adsorption pad.
Description
Technical Field
The invention belongs to the technical field of flour processing, and particularly relates to a production method of a wax-free pad for polishing.
Background
In the processing process of semiconductor materials, silicon wafers, sapphires and gallium arsenide are used as basic materials of common semiconductor devices and integrated circuits and are often required to be polished, and the quality of the polishing technology directly influences the surface quality of the silicon wafers, the sapphires and the gallium arsenide and the performance of the semiconductor devices. The conventional polishing techniques are mainly of two types: wax polishing and wax-free polishing. The wax-containing technology is characterized in that a silicon wafer, sapphire or gallium arsenide is bonded and fixed on a flat plate of a ceramic disc, a polishing head drives the ceramic disc to rotate on polishing cloth during polishing, and the polishing purpose is achieved under the action of mechanical pressure and polishing liquid. With the rapid development of electronic technology and the increasing integration degree of large-scale integrated circuits, the requirements of semiconductor devices are becoming more and more strict, and thus the advantages of wax-free polishing are gradually reflected.
The existing wax-free polishing process adopts an integrated template, a special template is ordered according to the specification of a silicon wafer to be processed, the silicon wafer is directly placed into a wafer placing hole of the template to be polished, the silicon wafer with different specifications can be polished only by adapting to the size of the wafer placing hole with the same specification, once the thickness of the silicon wafer is different from the depth of the wafer placing hole, the silicon wafer is very likely to slide out of the wafer placing hole in the processing process to cause wafer breakage and even turnover, the silicon wafers with different diameters and different thicknesses can not be compatible with polishing processing, the number and specification requirements on the templates are more, enough storage amounts of a loading disc and the template are required, and the production cost is high; and the problems of breakage, melting or polishing deviation of the wax-free pad in the polishing process of the wafer are caused due to poor tensile resistance, frictional force performance and heat bearing capacity of the base part of the existing wax-free pad, so that the polishing qualified rate of the wafer product is low, and the normal production level cannot be reached.
Disclosure of Invention
The invention provides a production method of a wax-free pad for polishing, which aims to solve the problems that the requirement on the number of templates is high in the existing wax-free polishing technology, the stretching resistance, the friction force performance and the heat bearing capacity of a base material are improved, and the polishing qualification rate and the production rate of a wax-free pad wafer are improved.
The purpose of the invention can be solved by the following technical scheme:
the utility model provides a polishing is with no wax pad, places the hole, the card is joined in marriage pad and no wax adsorption pad including base chassis, wafer, the base chassis be equipped with at least one wafer on the surface and place the hole, the wafer is placed the downthehole no wax adsorption pad that adsorbs the wafer that is equipped with, no wax adsorption pad and wafer are placed and are equipped with the one deck card at least between the interior bottom in hole and join in marriage the pad, and the adaptation in hole is placed with the wafer to the wafer of the not unidimensional wafer of being convenient for, improves the template utilization ratio, reduces template quantity, reduction in production cost, the card is joined in marriage the both sides of pad and is placed the interior bottom slip bonding in hole through lubricated liquid and no wax adsorption pad, wafer respectively, is convenient for the card join in marriage taking out, the assembly of pad and no wax adsorption pad.
Further, the base chassis comprises the following raw materials in parts by weight: 40-60 parts of iron powder, 10-30 parts of silicon nitride powder, 10-20 parts of niobium carbide powder and 1-3 parts of binder.
Furthermore, the wafer placing hole is circular and has a depth of 600-1000 μm, the clamping pad is circular and has a thickness of 100-300 μm, and the wax-free adsorption pad is circular and has a thickness of 100-200 μm.
A method of producing a wax-free pad for polishing, comprising the steps of:
step A: forming a base chassis: mixing iron powder, silicon nitride powder and niobium carbide powder, and then placing the mixture into a ball mill for ball milling, wherein the ball material ratio is 10:1, ball milling rotation speed is 300-400r/min, ball milling time is 5h, ball milling process is suspended once every 20min, the suspension time is 2-5min, and particle agglomeration caused by overheating is prevented; grinding the ball-milled mixed powder on an agate mortar for 10-20min, and then transferring the powder into a vacuum drying oven to dry for 3h at 100 ℃ to obtain dried mixed powder; adding a binder into the dried mixed powder, uniformly mixing, transferring the obtained mixed powder into a forming die, sintering and forming, cooling the blank disc of the formed gasket chassis at normal temperature, and cooling the blank disc to the normal temperature;
and B: and (3) processing a wafer placing hole: mounting the cooled blank disc on a lathe, and processing a wafer placing hole with a corresponding size to obtain a base chassis with the wafer placing hole;
step C: preparing and forming a clamping pad and a wax-free adsorption pad: respectively placing the sheets of the clamping pad and the wax-free adsorption pad in a mould to be processed into the clamping pad and the wax-free adsorption pad;
step D: assembling the wax-free pad: and C, assembling the base chassis with the wafer placing hole obtained in the step B, the clamping pad obtained in the step C and the wax-free adsorption pad through lubricating liquid to obtain the wax-free pad for polishing.
Further, in the step A, the sintering forming temperature is 1000-1100 ℃, the vacuum degree is lower than 80Pa, the pressure maintaining pressure is 40MPa, the pressure maintaining time is 5min, and the binder is polyvinyl alcohol.
Further, the clamping and matching pad is processed by carbon fiber.
Furthermore, the wax-free adsorption pad is formed by hot-pressing and bonding a carbon fiber layer, an adhesive layer and an adsorption layer, the carbon fiber layer is in contact with the clamping pad, and the adsorption layer is in contact with the wafer.
Furthermore, the adsorption layer is a polyurethane foam layer and has good elasticity and damping performance; the viscose layer is made of epoxy/polyurethane composite resin, can be well bonded with the carbon fiber layer and the adsorption layer, and avoids layering of the wax-free adsorption pad.
Further, the preparation method of the adhesive layer comprises the following steps:
step S1: adding polybutylene succinate into a three-neck flask provided with a thermometer and a vacuum tube, carrying out vacuum dehydration for 1h at 110 ℃ for standby, adding isophorone diisocyanate and dehydrated polybutylene succinate into the three-neck flask provided with the thermometer under the protection of nitrogen, heating to 85 ℃, and carrying out heat preservation reaction for 3h to obtain a polyurethane prepolymer;
step S2: and (2) adding the dehydrated epoxy resin into a three-neck flask provided with a thermometer and a vacuum tube, heating to 40 ℃, then adding the polyurethane prepolymer obtained in the step (S1), adding dibutyltin dilaurate, heating to 75 ℃ and reacting for 4 hours to obtain an adhesive layer.
Further, in the step S1, the adding mass of isophorone diisocyanate and dehydrated polybutylene succinate is 5-15:60-85.
Further, the epoxy resin dehydrated in the step S2, the polyurethane prepolymer obtained in the step S1 and dibutyltin dilaurate are added in a mass ratio of 20-50:70-90:0.5-1.2.
The invention has the beneficial effects that:
1. the wax-free adsorption pad is formed by hot-pressing and bonding the carbon fiber layer, the adhesive layer and the adsorption layer, the carbon fiber layer is in contact with the clamping pad, the adsorption layer is in contact with the wafer, and the epoxy resin and the polyurethane prepolymer are reacted to produce the composite resin.
2. The base chassis is formed by sintering iron powder, silicon nitride powder, niobium carbide powder and a binder, has better tensile resistance, friction force performance and heat bearing capacity, reduces the problem that a wax-free pad is broken, melted or polished and deviated in the polishing process of a wafer, improves the polishing qualification rate of the wafer, and is low in production cost by taking iron as a base material.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1:
the utility model provides a polishing is with no wax pad, places hole, card including base chassis, wafer and joins in marriage pad and no wax adsorption pad, the hole is placed to five wafers on the surface on base chassis, the wafer is placed the downthehole no wax adsorption pad that adsorbs the wafer that is equipped with, no wax adsorption pad and wafer are placed and are equipped with two-layer card between the interior bottom in hole and join in marriage the pad, the card is joined in marriage the both sides of pad and is placed the interior bottom slip bonding in hole through lubricating fluid and no wax adsorption pad, wafer respectively, and the card of being convenient for joins in marriage pad and no wax adsorption pad take out, assemble.
The base comprises a base chassis and a base cover, wherein the base chassis comprises the following raw materials in parts by weight: 40 parts of iron powder, 10 parts of silicon nitride powder, 10 parts of niobium carbide powder and 1 part of binder.
The wafer placing hole is circular and 600 microns deep, the clamping pad is circular and 100 microns thick, and the wax-free adsorption pad is circular and 100 microns thick.
The production method of the wax-free pad for polishing comprises the following steps:
step A: forming a base chassis: mixing iron powder, silicon nitride powder and niobium carbide powder, and then placing the mixture into a ball mill for ball milling, wherein the ball-material ratio is 10:1, ball milling rotation speed is 300r/min, ball milling time is 5h, ball milling process is suspended once every 20min, the suspension time is 2min, and particle agglomeration caused by overheating is prevented; grinding the ball-milled mixed powder on an agate mortar for 10min, and then transferring the powder into a vacuum drying oven to dry for 3h at 100 ℃ to obtain dried mixed powder; adding a binder into the dried mixed powder, uniformly mixing, transferring the obtained mixed powder into a forming die, carrying out sintering forming, cooling the blank disc of the formed gasket base disc at normal temperature, and cooling to normal temperature, wherein the sintering forming temperature is 1000 ℃, the vacuum degree is lower than 80Pa, the pressure maintaining pressure is 40MPa, the pressure maintaining time is 5min, and the binder is polyvinyl alcohol;
and B: and (3) processing a wafer placing hole: mounting the cooled blank disc on a lathe, and processing a wafer placing hole with a corresponding size to obtain a base chassis with the wafer placing hole;
and C: preparing and forming a clamping pad and a wax-free adsorption pad: respectively placing the sheets of the clamping pad and the wax-free adsorption pad in a mould to be processed into the clamping pad and the wax-free adsorption pad;
step D: assembling a wax-free pad: and C, assembling the base chassis with the wafer placing hole obtained in the step B, the clamping pad obtained in the step C and the wax-free adsorption pad through lubricating liquid to obtain the wax-free pad for polishing.
Wherein, the clamping and matching pad is processed by carbon fiber; the wax-free adsorption pad is formed by hot-pressing and bonding a carbon fiber layer, an adhesive layer and an adsorption layer, wherein the carbon fiber layer is in contact with the clamping pad, and the adsorption layer is in contact with the wafer; the adsorption layer is a polyurethane foam layer and has good elasticity and damping performance; the viscose layer is made of epoxy/polyurethane composite resin, can be well bonded with the carbon fiber layer and the adsorption layer, and avoids layering of the wax-free adsorption pad.
The preparation method of the adhesive layer comprises the following steps:
step S1: adding polybutylene succinate into a three-neck flask with a thermometer and a vacuum tube, dehydrating the polybutylene succinate for 1h at 110 ℃ under vacuum for standby, adding isophorone diisocyanate and dehydrated polybutylene succinate into the three-neck flask with the thermometer under the protection of nitrogen, heating to 85 ℃, and reacting for 3h under heat preservation to obtain a polyurethane prepolymer, wherein the adding mass of the isophorone diisocyanate and the dehydrated polybutylene succinate is 5:60, adding a solvent to the mixture;
step S2: adding dehydrated epoxy resin into a three-neck flask provided with a thermometer and a vacuum tube, heating to 40 ℃, then adding the polyurethane prepolymer obtained in the step S1, adding dibutyltin dilaurate, heating to 75 ℃ to react for 4 hours, and obtaining an adhesive layer, wherein the mass ratio of the dehydrated epoxy resin to the polyurethane prepolymer obtained in the step S1 is 20:70:0.5.
example 2:
the utility model provides a polishing is with no wax pad, places hole, card including base chassis, wafer and joins in marriage pad and no wax adsorption pad, the base chassis be equipped with seven wafers on the surface and place the hole, the wafer is placed the downthehole no wax adsorption pad that is equipped with the absorption wafer, no wax adsorption pad and wafer are placed and are equipped with the one deck card between the interior bottom in hole and join in marriage the pad, the card is joined in marriage the both sides of pad and is passed through lubricating liquid and no wax adsorption pad, wafer respectively and place the interior bottom slip bonding in hole, is convenient for card join in marriage taking out, the assembly of pad and no wax adsorption pad.
The base comprises a base chassis and a base cover, wherein the base chassis comprises the following raw materials in parts by weight: 50 parts of iron powder, 20 parts of silicon nitride powder, 15 parts of niobium carbide powder and 2 parts of binder.
The wafer placing hole is circular and 800 microns deep, the clamping pad is circular and 150 microns thick, and the wax-free adsorption pad is circular and 150 microns thick.
The production method of the wax-free pad for polishing comprises the following steps:
step A: forming a base chassis: mixing iron powder, silicon nitride powder and niobium carbide powder, and then placing the mixture into a ball mill for ball milling, wherein the ball-material ratio is 10:1, ball milling rotation speed is 300r/min, ball milling time is 5h, ball milling process is suspended once every 20min, the suspension time is 2min, and particle agglomeration caused by overheating is prevented; grinding the ball-milled mixed powder on an agate mortar for 10min, and then transferring the powder into a vacuum drying oven to dry for 3h at 100 ℃ to obtain dried mixed powder; adding a binder into the dried mixed powder, uniformly mixing, transferring the obtained mixed powder into a forming die, carrying out sintering forming, cooling the blank disc of the formed gasket base disc at normal temperature, and cooling to normal temperature, wherein in the step A, the sintering forming temperature is 1000 ℃, the vacuum degree is lower than 80Pa, the pressure maintaining pressure is 40MPa, the pressure maintaining time is 5min, and the binder is polyvinyl alcohol;
and B: and (3) processing a wafer placing hole: mounting the cooled blank disc on a lathe, and processing a wafer placing hole with a corresponding size to obtain a base chassis with the wafer placing hole;
and C: preparing and forming a clamping pad and a wax-free adsorption pad: respectively placing the sheets of the clamping pad and the wax-free adsorption pad in a mould to be processed into the clamping pad and the wax-free adsorption pad;
step D: assembling a wax-free pad: and C, assembling the base chassis with the wafer placing hole obtained in the step B, the clamping pad obtained in the step C and the wax-free adsorption pad through lubricating liquid to obtain the wax-free pad for polishing.
Wherein, the clamping and matching pad is processed by carbon fiber; the wax-free adsorption pad is formed by hot-pressing and bonding a carbon fiber layer, an adhesive layer and an adsorption layer, wherein the carbon fiber layer is in contact with the clamping pad, and the adsorption layer is in contact with the wafer; the adsorption layer is a polyurethane foam layer and has good elasticity and damping performance; the viscose layer is made of epoxy/polyurethane composite resin, can be well bonded with the carbon fiber layer and the adsorption layer, and avoids layering of the wax-free adsorption pad.
The preparation method of the adhesive layer comprises the following steps:
step S1: adding polybutylene succinate into a three-neck flask with a thermometer and a vacuum tube, dehydrating the polybutylene succinate for 1h at 110 ℃ under vacuum for standby, adding isophorone diisocyanate and dehydrated polybutylene succinate into the three-neck flask with the thermometer under the protection of nitrogen, heating to 85 ℃, and reacting for 3h under heat preservation to obtain a polyurethane prepolymer, wherein the adding mass of the isophorone diisocyanate and the dehydrated polybutylene succinate is 10:70;
step S2: adding dehydrated epoxy resin into a three-neck flask provided with a thermometer and a vacuum tube, heating to 40 ℃, then adding the polyurethane prepolymer obtained in the step S1, adding dibutyltin dilaurate, heating to 75 ℃ to react for 4 hours, and obtaining an adhesive layer, wherein the mass ratio of the dehydrated epoxy resin to the polyurethane prepolymer obtained in the step S1 is 30:80:0.8.
example 3:
the utility model provides a polishing is with no wax pad, places hole, card including base chassis, wafer and joins in marriage pad and no wax adsorption pad, the hole is placed to five wafers on the surface on base chassis, the wafer is placed the downthehole no wax adsorption pad that is equipped with the absorption wafer, no wax adsorption pad and wafer are placed and are equipped with the three-layer card between the interior bottom in hole and join in marriage the pad, the card is joined in marriage the both sides of pad and is passed through lubricating liquid and no wax adsorption pad, wafer respectively and place the interior bottom slip bonding in hole, is convenient for card join in marriage taking out, the assembly of pad and no wax adsorption pad.
The base comprises a base chassis and a base cover, wherein the base chassis comprises the following raw materials in parts by weight: 60 parts of iron powder, 30 parts of silicon nitride powder, 20 parts of niobium carbide powder and 3 parts of binder.
The wafer placing hole is circular and has a depth of 1000 microns, the clamping pad is circular and has a thickness of 300 microns, and the wax-free adsorption pad is circular and has a thickness of 200 microns.
The production method of the wax-free pad for polishing comprises the following steps:
step A: forming a base chassis: mixing iron powder, silicon nitride powder and niobium carbide powder, and then placing the mixture into a ball mill for ball milling, wherein the ball-material ratio is 10:1, ball milling rotation speed is 300r/min, ball milling time is 5h, ball milling process is suspended once every 20min, the suspension time is 2min, and particle agglomeration caused by overheating is prevented; grinding the ball-milled mixed powder on an agate mortar for 10min, and then transferring the powder into a vacuum drying oven to dry for 3h at 100 ℃ to obtain dried mixed powder; adding a binder into the dried mixed powder, uniformly mixing, transferring the obtained mixed powder into a forming die, sintering and forming, and cooling the blank disc of the formed gasket chassis to normal temperature, wherein in the step A, the sintering and forming temperature is 1000 ℃, the vacuum degree is lower than 80Pa, the pressure maintaining pressure is 40MPa, the pressure maintaining time is 5min, and the binder is polyvinyl alcohol;
and B: and (3) processing a wafer placing hole: mounting the cooled blank disc on a lathe, and processing a wafer placing hole with a corresponding size to obtain a base chassis with the wafer placing hole;
and C: preparing and forming a clamping pad and a wax-free adsorption pad: respectively placing the sheets of the clamping pad and the wax-free adsorption pad in a mould to be processed into the clamping pad and the wax-free adsorption pad;
step D: assembling a wax-free pad: and C, assembling the base chassis with the wafer placing hole obtained in the step B, the clamping pad obtained in the step C and the wax-free adsorption pad through lubricating liquid to obtain the wax-free pad for polishing.
Wherein, the clamping and matching pad is processed by carbon fiber; the wax-free adsorption pad is formed by hot-pressing and bonding a carbon fiber layer, an adhesive layer and an adsorption layer, wherein the carbon fiber layer is in contact with the clamping pad, and the adsorption layer is in contact with the wafer; the adsorption layer is a polyurethane foam layer and has good elasticity and damping performance; the viscose layer is made of epoxy/polyurethane composite resin, can be well bonded with the carbon fiber layer and the adsorption layer, and avoids layering of the wax-free adsorption pad.
The preparation method of the adhesive layer comprises the following steps:
step S1: adding polybutylene succinate in a three-neck flask with a thermometer and a vacuum tube, performing vacuum dehydration for 1h at 110 ℃ for standby, adding isophorone diisocyanate and dehydrated polybutylene succinate into the three-neck flask with the thermometer under the protection of nitrogen, heating to 85 ℃, and performing heat preservation reaction for 3h to obtain a polyurethane prepolymer, wherein the adding mass of the isophorone diisocyanate and the dehydrated polybutylene succinate is 15:85;
step S2: adding dehydrated epoxy resin into a three-neck flask provided with a thermometer and a vacuum tube, heating to 40 ℃, then adding the polyurethane prepolymer obtained in the step S1, adding dibutyltin dilaurate, heating to 75 ℃ to react for 4 hours, and obtaining an adhesive layer, wherein the mass ratio of the dehydrated epoxy resin to the polyurethane prepolymer obtained in the step S1 is 50:90:1.2.
comparative example 1:
the utility model provides a polishing is with no wax pad, places hole, card including base chassis, wafer and joins in marriage pad and no wax adsorption pad, the hole is placed to five wafers on the surface on base chassis, the wafer is placed the downthehole no wax adsorption pad that adsorbs the wafer that is equipped with, no wax adsorption pad and wafer are placed and are equipped with two-layer card between the interior bottom in hole and join in marriage the pad, the card is joined in marriage the both sides of pad and is placed the interior bottom slip bonding in hole through lubricating fluid and no wax adsorption pad, wafer respectively, and the card of being convenient for joins in marriage pad and no wax adsorption pad take out, assemble.
The base comprises a base chassis and a base cover, wherein the base chassis comprises the following raw materials in parts by weight: 40 parts of iron powder, 10 parts of niobium carbide powder and 1 part of binder.
The wafer placing hole is circular and 600 μm deep, the clamping pad is circular and 100 μm thick, and the wax-free adsorption pad is circular and 100 μm thick.
The production method of the wax-free pad for polishing comprises the following steps:
step A: forming a base chassis: mixing iron powder and niobium carbide powder, and then placing the mixture into a ball mill for ball milling, wherein the ball-material ratio is 10:1, ball milling rotation speed is 300r/min, ball milling time is 5h, ball milling process is suspended once every 20min, the suspension time is 2min, and particle agglomeration caused by overheating is prevented; grinding the ball-milled mixed powder on an agate mortar for 10min, and then transferring the powder into a vacuum drying oven to dry for 3h at 100 ℃ to obtain dried mixed powder; adding a binder into the dried mixed powder, uniformly mixing, transferring the obtained mixed powder into a forming die, carrying out sintering forming, cooling the blank disc of the formed gasket base disc at normal temperature, and cooling to normal temperature, wherein the sintering forming temperature is 1000 ℃, the vacuum degree is lower than 80Pa, the pressure maintaining pressure is 40MPa, the pressure maintaining time is 5min, and the binder is polyvinyl alcohol;
and B: and (3) processing a wafer placing hole: mounting the cooled blank disc on a lathe, and processing a wafer placing hole with a corresponding size to obtain a base chassis with the wafer placing hole;
and C: preparing and forming a clamping pad and a wax-free adsorption pad: respectively placing the sheets of the clamping pad and the wax-free adsorption pad in a mould to be processed into the clamping pad and the wax-free adsorption pad;
step D: assembling a wax-free pad: and C, assembling the base chassis with the wafer placing hole obtained in the step B, the clamping pad obtained in the step C and the wax-free adsorption pad through lubricating liquid to obtain the wax-free pad for polishing.
Wherein, the clamping and matching pad is processed by carbon fiber; the wax-free adsorption pad is formed by hot-pressing and bonding a carbon fiber layer, an adhesive layer and an adsorption layer, wherein the carbon fiber layer is in contact with the clamping pad, and the adsorption layer is in contact with the wafer; the adsorption layer is a polyurethane foam layer and has good elasticity and damping performance; the viscose layer is made of epoxy/polyurethane composite resin, can be well bonded with the carbon fiber layer and the adsorption layer, and avoids layering of the wax-free adsorption pad.
The preparation method of the adhesive layer comprises the following steps:
step S1: adding polybutylene succinate into a three-neck flask with a thermometer and a vacuum tube, dehydrating the polybutylene succinate for 1h at 110 ℃ under vacuum for standby, adding isophorone diisocyanate and dehydrated polybutylene succinate into the three-neck flask with the thermometer under the protection of nitrogen, heating to 85 ℃, and reacting for 3h under heat preservation to obtain a polyurethane prepolymer, wherein the adding mass of the isophorone diisocyanate and the dehydrated polybutylene succinate is 5:60, adding a solvent to the mixture;
step S2: adding dehydrated epoxy resin into a three-neck flask provided with a thermometer and a vacuum tube, heating to 40 ℃, then adding the polyurethane prepolymer obtained in the step S1, adding dibutyltin dilaurate, heating to 75 ℃ to react for 4 hours, and obtaining an adhesive layer, wherein the mass ratio of the dehydrated epoxy resin to the polyurethane prepolymer obtained in the step S1 is 20:70:0.5.
comparative example 2:
the utility model provides a polishing is with no wax pad, places hole, card including base chassis, wafer and joins in marriage pad and no wax adsorption pad, the base chassis be equipped with seven wafers on the surface and place the hole, the wafer is placed the downthehole no wax adsorption pad that is equipped with the absorption wafer, no wax adsorption pad and wafer are placed and are equipped with the one deck card between the interior bottom in hole and join in marriage the pad, the card is joined in marriage the both sides of pad and is passed through lubricating liquid and no wax adsorption pad, wafer respectively and place the interior bottom slip bonding in hole, is convenient for card join in marriage taking out, the assembly of pad and no wax adsorption pad.
The base comprises a base chassis and a base cover, wherein the base chassis comprises the following raw materials in parts by weight: 50 parts of iron powder, 20 parts of silicon nitride powder, 15 parts of niobium carbide powder and 2 parts of binder.
The wafer placing hole is circular and 800 microns deep, the clamping pad is circular and 150 microns thick, and the wax-free adsorption pad is circular and 150 microns thick.
The production method of the wax-free pad for polishing comprises the following steps:
step A: forming a base chassis: mixing iron powder and silicon nitride powder, and then placing the mixture into a ball mill for ball milling, wherein the ball material ratio is 10:1, ball milling rotation speed is 300r/min, ball milling time is 5h, ball milling process is suspended once every 20min, the suspension time is 2min, and particle agglomeration caused by overheating is prevented; grinding the ball-milled mixed powder on an agate mortar for 10min, and then transferring the powder into a vacuum drying oven to dry for 3h at 100 ℃ to obtain dried mixed powder; adding a binder into the dried mixed powder, uniformly mixing, transferring the obtained mixed powder into a forming die, carrying out sintering forming, cooling the blank disc of the formed gasket base disc at normal temperature, and cooling to normal temperature, wherein in the step A, the sintering forming temperature is 1000 ℃, the vacuum degree is lower than 80Pa, the pressure maintaining pressure is 40MPa, the pressure maintaining time is 5min, and the binder is polyvinyl alcohol;
and B: and (3) processing a wafer placing hole: mounting the cooled blank disc on a lathe, and processing a wafer placing hole with a corresponding size to obtain a base chassis with the wafer placing hole;
and C: preparing and forming a clamping pad and a wax-free adsorption pad: respectively placing the sheets of the clamping pad and the wax-free adsorption pad in a mould to be processed into the clamping pad and the wax-free adsorption pad;
step D: assembling a wax-free pad: and C, assembling the base chassis with the wafer placing hole obtained in the step B, the clamping pad obtained in the step C and the wax-free adsorption pad through lubricating liquid to obtain the wax-free pad for polishing.
Wherein, the clamping and matching pad is processed by carbon fiber; the wax-free adsorption pad is formed by hot-pressing and bonding a carbon fiber layer, an adhesive layer and an adsorption layer, wherein the carbon fiber layer is in contact with the clamping pad, and the adsorption layer is in contact with the wafer; the adsorption layer is a polyurethane foam layer and has good elasticity and damping performance; the viscose layer is made of epoxy/polyurethane composite resin, can be well bonded with the carbon fiber layer and the adsorption layer, and avoids layering of the wax-free adsorption pad.
The preparation method of the adhesive layer comprises the following steps:
step S1: adding polybutylene succinate into a three-neck flask with a thermometer and a vacuum tube, dehydrating the polybutylene succinate for 1h at 110 ℃ under vacuum for standby, adding isophorone diisocyanate and dehydrated polybutylene succinate into the three-neck flask with the thermometer under the protection of nitrogen, heating to 85 ℃, and reacting for 3h under heat preservation to obtain a polyurethane prepolymer, wherein the adding mass of the isophorone diisocyanate and the dehydrated polybutylene succinate is 10:70;
step S2: adding dehydrated epoxy resin into a three-neck flask provided with a thermometer and a vacuum tube, heating to 40 ℃, then adding the polyurethane prepolymer obtained in the step S1, adding dibutyltin dilaurate, heating to 75 ℃ to react for 4 hours, and obtaining an adhesive layer, wherein the mass ratio of the dehydrated epoxy resin to the polyurethane prepolymer obtained in the step S1 is 30:80:0.8.
comparative example 3:
the utility model provides a polishing is with no wax pad, places hole, card including base chassis, wafer and joins in marriage pad and no wax adsorption pad, the hole is placed to five wafers on the surface on base chassis, the wafer is placed the downthehole no wax adsorption pad that is equipped with the absorption wafer, no wax adsorption pad and wafer are placed and are equipped with the three-layer card between the interior bottom in hole and join in marriage the pad, the card is joined in marriage the both sides of pad and is passed through lubricating liquid and no wax adsorption pad, wafer respectively and place the interior bottom slip bonding in hole, is convenient for card join in marriage taking out, the assembly of pad and no wax adsorption pad.
The base comprises a base chassis and a base cover, wherein the base chassis comprises the following raw materials in parts by weight: 60 parts of iron powder, 30 parts of silicon nitride powder, 20 parts of niobium carbide powder and 3 parts of binder.
The wafer placing hole is circular and has a depth of 1000 microns, the clamping pad is circular and has a thickness of 300 microns, and the wax-free adsorption pad is circular and has a thickness of 200 microns.
The production method of the wax-free pad for polishing comprises the following steps:
step A: forming a base chassis: mixing iron powder, silicon nitride powder and niobium carbide powder, and then placing the mixture into a ball mill for ball milling, wherein the ball-material ratio is 10:1, ball milling rotation speed is 300r/min, ball milling time is 5h, ball milling process is suspended once every 20min, the suspension time is 2min, and particle agglomeration caused by overheating is prevented; grinding the ball-milled mixed powder on an agate mortar for 10min, and then transferring the powder into a vacuum drying oven to dry for 3h at 100 ℃ to obtain dried mixed powder; adding a binder into the dried mixed powder, uniformly mixing, transferring the obtained mixed powder into a forming die, sintering and forming, and cooling the blank disc of the formed gasket chassis to normal temperature, wherein in the step A, the sintering and forming temperature is 1000 ℃, the vacuum degree is lower than 80Pa, the pressure maintaining pressure is 40MPa, the pressure maintaining time is 5min, and the binder is polyvinyl alcohol;
and B: and (3) processing a wafer placing hole: mounting the cooled blank disc on a lathe, and processing a wafer placing hole with a corresponding size to obtain a base chassis with the wafer placing hole;
step C: preparing and forming a clamping pad and a wax-free adsorption pad: respectively placing the sheets of the clamping pad and the wax-free adsorption pad in a mould to be processed into the clamping pad and the wax-free adsorption pad;
step D: assembling a wax-free pad: and C, assembling the base chassis with the wafer placing hole obtained in the step B, the clamping pad obtained in the step C and the wax-free adsorption pad through lubricating liquid to obtain the wax-free pad for polishing.
Wherein, the clamping and matching pad is processed by carbon fiber; the wax-free adsorption pad is formed by hot-pressing and bonding a carbon fiber layer, an adhesive layer and an adsorption layer, wherein the carbon fiber layer is in contact with the clamping pad, and the adsorption layer is in contact with the wafer; the adsorption layer is a polyurethane foam layer and has good elasticity and damping performance; the adhesive layer is made of epoxy resin.
The base chassis obtained in examples 1 to 3 and comparative examples 1 to 2 were subjected to tests of abrasion resistance, tensile resistance, and maximum operating temperature, wherein the abrasion resistance was tested according to the QB/T2726-2005, using a CS-10 grinding wheel, a test condition load of 1000g, a test rotation number of 1000 revolutions, and rated: level 1: it is clear that; and 2, stage: the comparison is obvious; and 3, stage: can be distinguished; and 4, stage 4: difficult to distinguish; and 5, stage: cannot be distinguished; the tensile resistance adopts a GB/T10120-2013 metal material tensile stress relaxation test method, a pressure detection device is applied, under the normal temperature condition, the test condition adopts 1MPa, the occurrence condition of cracks is checked, and the grade is evaluated as follows: level 1: it is clear that; and 2, stage: the comparison is obvious; and 3, level: can be distinguished; 4, level: difficult to distinguish; and 5, stage: the results are shown below.
| Example 1 | Example 2 | Example 3 | Comparative example 1 | Comparative example 2 | |
| Wear resistance | 4 | 5 | 5 | 3 | 3 |
| Tensile property | 5 | 5 | 5 | 3 | 3 |
| Maximum operating temperature | 801℃ | 823℃ | 818℃ | 750℃ | 745℃ |
As can be seen from the above table data, the abrasion resistance, tensile resistance and maximum operating temperature of the base chassis obtained in examples 1-3 are superior to those of comparative examples 1-2.
The adsorption pads without wax pads obtained in example 3 and comparative example 3 were subjected to carbon fiber layer and adsorption layer interlayer 90OThe peel force test measured data for example 3 to be 25N and for comparative example 3 to be 18N, it can be seen that the absorbent pad without the wax pad obtained in example 3 was more compact than the absorbent pad without the wax pad obtained in comparative example 3.
In the description herein, references to the description of "one embodiment," "an example," "a specific example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing is merely exemplary and illustrative of the principles of the present invention and various modifications, additions and substitutions of the specific embodiments described herein may be made by those skilled in the art without departing from the principles of the present invention or exceeding the scope of the claims set forth herein.
Claims (6)
1. A method of producing a wax-free pad for polishing, comprising the steps of:
step A: forming a base chassis: mixing iron powder, silicon nitride powder and niobium carbide powder, and then placing the mixture into a ball mill for ball milling, wherein the ball-material ratio is 10:1, ball milling at the rotating speed of 300-400r/min for 5h, wherein the ball milling process is suspended once every 20min for 2-5min; grinding the ball-milled mixed powder for 10-20min, and then transferring the powder into a vacuum drying oven to dry for 3h at 100 ℃ to obtain dried mixed powder; adding a binder into the dried mixed powder, uniformly mixing, transferring into a forming die, sintering and forming, cooling the blank disc of the formed gasket chassis at normal temperature, and cooling to normal temperature; the base plate comprises the following raw materials in parts by weight: 40-60 parts of iron powder, 10-30 parts of silicon nitride powder, 10-20 parts of niobium carbide powder and 1-3 parts of binder
And B: and (3) processing a wafer placing hole: mounting the cooled blank disc on a lathe, and processing a wafer placing hole with a corresponding size to obtain a base chassis with the wafer placing hole; the surface of the base chassis is provided with at least one wafer placing hole;
and C: preparing and forming a clamping pad and a wax-free adsorption pad: respectively placing the sheets of the clamping pad and the wax-free adsorption pad in a mould to be processed into the clamping pad and the wax-free adsorption pad;
step D: assembling a wax-free pad: assembling the base chassis with the wafer placing hole obtained in the step B and the clamping pad and the wax-free adsorption pad obtained in the step C through lubricating liquid to obtain a wax-free pad for polishing;
a wax-free adsorption pad for adsorbing the wafer is arranged in the wafer placing hole, and at least one layer of clamping and matching pad is arranged between the wax-free adsorption pad and the inner bottom of the wafer placing hole; the wafer placing hole is circular and has a depth of 600-1000 μm, the clamping pad is circular and has a thickness of 100-300 μm, and the wax-free adsorption pad is circular and has a thickness of 100-200 μm.
2. The method for producing a wax-free pad for polishing as claimed in claim 1, wherein the sintering temperature in the step A is 1000 to 1100 ℃, the degree of vacuum is less than 80Pa, the pressure is 40MPa, and the pressure holding time is 5min.
3. The method for producing a wax-free pad for polishing as claimed in claim 1, wherein the chuck pad is processed from carbon fiber; the wax-free adsorption pad is formed by hot-pressing and bonding a carbon fiber layer, an adhesive layer and an adsorption layer, the carbon fiber layer is in contact with the clamping pad, and the adsorption layer is in contact with the wafer.
4. The method for producing a wax-free pad for polishing as claimed in claim 3, wherein the adsorption layer is a polyurethane foam layer and the adhesive layer is made of an epoxy/polyurethane composite resin.
5. The method for producing a wax-free pad for polishing as claimed in claim 4, wherein the adhesive layer is formed by the steps of:
step S1: dehydrating polybutylene succinate, uniformly mixing isophorone diisocyanate and the dehydrated polybutylene succinate under the protection of nitrogen, heating to 85 ℃, and carrying out heat preservation reaction for 3 hours to obtain a polyurethane prepolymer;
step S2: and (3) adding the dehydrated epoxy resin into a reaction container, heating to 40 ℃, adding the polyurethane prepolymer obtained in the step (S1), adding dibutyltin dilaurate, heating to 75 ℃, and reacting for 4 hours to obtain an adhesive layer.
6. The method for producing a wax-free pad for polishing as set forth in claim 5, wherein the amount of isophorone diisocyanate and dehydrated polybutylene succinate added in step S1 is 5 to 15:60-85 parts; in the step S2, the epoxy resin after dehydration, the polyurethane prepolymer obtained in the step S1 and dibutyltin dilaurate are added in a mass ratio of 20-50:70-90:0.5-1.2.
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| US4233077A (en) * | 1977-04-29 | 1980-11-11 | Ppg Industries, Inc. | Preparing extrudable refractory hard metal-wax blends |
| US5006493A (en) * | 1986-03-31 | 1991-04-09 | The Dow Chemical Company | Novel ceramic binder comprising poly(ethyloxazoline) |
| JP4211382B2 (en) * | 2002-12-19 | 2009-01-21 | 住友電気工業株式会社 | Waxless polishing method and suction pad for waxless polishing |
| US20050178666A1 (en) * | 2004-01-13 | 2005-08-18 | Applied Materials, Inc. | Methods for fabrication of a polishing article |
| CN202507187U (en) * | 2012-03-31 | 2012-10-31 | 天津西美科技有限公司 | Single-inlaying layer wax-free grinding and polishing pattern plate |
| CN102581750B (en) * | 2012-03-31 | 2015-04-29 | 天津西美科技有限公司 | Wax-free grinding and polishing template with double inlaying layers |
| CN104311131B (en) * | 2014-10-22 | 2016-02-24 | 山东理工大学 | A kind of silicon nitride, silicon carbide are in conjunction with the preparation method of niobium carbide foamed ceramics |
| KR102607586B1 (en) * | 2018-11-05 | 2023-11-30 | 삼성디스플레이 주식회사 | Substrate supportiong device and method of polishing substrate using the same |
| CN109605137A (en) * | 2018-12-27 | 2019-04-12 | 衢州晶哲电子材料有限公司 | A kind of unpowered rotation of silicon wafer is without wax polishing template and its polishing method |
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