CN109605137A - A kind of unpowered rotation of silicon wafer is without wax polishing template and its polishing method - Google Patents
A kind of unpowered rotation of silicon wafer is without wax polishing template and its polishing method Download PDFInfo
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- CN109605137A CN109605137A CN201811609045.3A CN201811609045A CN109605137A CN 109605137 A CN109605137 A CN 109605137A CN 201811609045 A CN201811609045 A CN 201811609045A CN 109605137 A CN109605137 A CN 109605137A
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- Prior art keywords
- rotation
- silicon wafer
- template
- absorption layer
- film perforation
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention relates to a kind of unpowered rotations of silicon wafer without wax polishing template and its polishing method, it is characterized by comprising templates (1) and setting to set film perforation (2) at least one of template (1) surface, it is described to set the absorption layer (3) being provided in film perforation (2) for adsorbing silicon wafer, it the absorption layer (3) and sets and is provided at least one layer of rotation lubricating pad (4) between film perforation (2), rotation lubricating pad (4) two sides pass through lubricating fluid and absorption layer (3) respectively and to set the interior bottom absorption sliding of film perforation (2) Nian Jie.The present invention provides a kind of long service life, the unpowered rotations of silicon wafer high in machining efficiency and low production cost without wax polishing template and its polishing method.
Description
Technical field
The present invention relates to a kind of unpowered rotations of silicon wafer without wax polishing template and its polishing method.
Background technique
In the process of semiconductor material, silicon wafer, sapphire and GaAs are as common semiconductor device, integrated electricity
The basic material on road, it is often necessary to it is processed by shot blasting, and the quality of polishing technology will directly influence silicon wafer, sapphire
With the quality of gallium arsenide surface, the performance of semiconductor devices, there are mainly two types of traditional polishing technologies: having wax polishing and throws without wax
Light, wax technology are that silicon wafer, sapphire either GaAs are adhesively fixed on the plate of ceramic disk, rubbing head band when polishing
Dynamic ceramic disk rotates on polishing cloth, and polishing purpose is realized under mechanical pressure and the use of polishing liquid, and practice discovery is this to have
With the rapid development of electronic technology, and large scale integrated circuit wax polishing polishes precision low defect there are wax contamination
Integration degree is higher and higher, and requirement of the people to semiconductor devices is also further stringent, therefore the advantage without wax polishing gradually obtains
To embody, existing Wax-free polishing process uses integrated template, orders dedicated template according to the silicon wafer specification to be processed, will
Silicon wafer, which is directly introduced to setting in film perforation for template, to be polished, and set film perforation for what the silicon wafer of different size must be adapted to same size
Size just can be carried out polishing, once silicon wafer thickness is different from piece hole depth is set, silicon wafer is just very likely to during processing
Fragmentation is caused even to overturn from setting to skid off in film perforation, the silicon wafer of different-diameter different-thickness cannot be compatible with polishing, to template
Quantity, specification requirement is relatively more, must there is the quantity in stock of enough load plates and template, high production cost；Existing template service life ratio
Shorter, generally after 300mins high pressure polishing time, the absorption layer in hole loses adsorption function, to cause to process
Silicon chip surface TTV (silicon wafer thickness deviation) afterwards is poor, needs regular inspection to replace, is replaced with while time-consuming and laborious
This is relatively high.
Summary of the invention
In view of the deficiencies of the prior art, the present invention intends to provide a kind of long service life, high in machining efficiency
And the low unpowered rotation of silicon wafer of production cost is without wax polishing template and its polishing method.
The technical scheme of the present invention is realized as follows: a kind of unpowered rotation of silicon wafer is without wax polishing template, feature exists
In: it is set film perforation (2) including template (1) and setting at least one of template (1) surface, described to set setting in film perforation (2) useful
In the absorption layer (3) of absorption silicon wafer, the absorption layer (3) and sets and be provided at least one layer of rotation lubricating pad between film perforation (2)
(4), rotation lubricating pad (4) two sides pass through lubricating fluid and absorption layer (3) respectively and set the interior bottom absorption sliding of film perforation (2) and glue
It connects.
It is preferred that are as follows: the thickness of the rotation lubricating pad (4) is arranged between 75um to 200um.
It is preferred that are as follows: the rotation lubricating pad (4) with a thickness of 75um, 100um, 125um, 150um or 200um.
It is preferred that are as follows: the depth for setting film perforation (2) be 1200um, the absorption layer (3) with a thickness of 580um.
It is preferred that are as follows: the material of the rotation lubricating pad (4) is carbon fiber.
It is preferred that are as follows: the lubricating fluid is water.
It is preferred that are as follows: it is several that set film perforation (2) circumferential equally spaced from each other from being arranged at intervals on template (1) surface along template (1).
The present invention discloses a kind of throwing of the unpowered rotation of silicon wafer without wax polishing template of efficient polishing effect in place
Light method, steps are as follows:
1), rotation lubricating pad (4) is chosen: determining the thickness specification of silicon wafer, chooses the rotation lubricating pad of corresponding thickness
(4), after lubricating fluid being added in setting film perforation (2), rotation lubricating pad (4) is pasted and is set in film perforation (2)；
2), silicon wafer is fixed: after lubricating fluid is added on the surface of rotation lubricating pad (4), absorption layer (3) being pasted rotation profit
Skidding (4) surface, silicon wafer are placed on absorption layer (3)；
3), operation polishing: template (1) is fixed on polishing machine, and starts revolution rotation under the driving of polishing machine, right
The position that film perforation (2) is set in silicon wafer exposing is polished；
4), rotation polishes: during the polishing process, silicon wafer is made silicon wafer that stickup be driven to connect by under lateral rotary action power
On rotation lubricating pad (4) rotation occurs for the absorption layer (3) connect, meanwhile, rotation lubricating pad (4) is rotated in absorption layer (3) and is driven
Under, rotation occurs for the opposite interior bottom of film perforation (2)；
5), maintenance replacement: the template that stops operating (1) removes the silicon wafer on absorption layer (3), and successively takes out and set film perforation (2)
In absorption layer (3) and rotation lubricating pad (4), rejoin lubricating fluid to after setting in film perforation (2), new rotation lubricated
Pad (4), which pastes, to be set in film perforation (2), and lubricating fluid is added to the surface of rotation lubricating pad (4), new absorption layer (3) is pasted
Rotation lubricating pad (4) surface, silicon wafer are placed on new absorption layer (3)；
6) it, polishes rewinding: after silicon wafer completes polishing, successively removing silicon wafer, absorption layer (3) and rotation lubricating pad (4).
By using above-mentioned technical proposal, in absorption layer (3) and set between film perforation (2) interior bottom provided with rotation lubricating pad
(4), the thickness of rotation lubricating pad (4) is adjustable from 75um to 200um, and the quantity in stock of template (1) is greatly saved, same diameter
Silicon wafer only needs a set of corresponding template that can reduce production cost；Template in compared with the existing technology, the present invention is significantly
The service life for extending absorption layer (3), through test high pressure polishing time be promoted to about in 500mins；Rotation lubricating pad (4)
Using the material of carbon fiber, can make to process with the rotation of opposite film perforation (2) lesser resistance after lubricating fluid is wet
Silicon chip surface TTV is significantly improved, and improves the silicon wafer quality of production, is not needed regular replacement absorption layer (3), is improved
Whole polishing efficiency；It replaces absorption layer (3) and rotation lubricating pad (4) is easy to operate, further improve the efficiency of production.This
Invention provide a kind of long service life, the unpowered rotation of silicon wafer high in machining efficiency and low production cost without wax polishing template and
Its polishing method.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention without any creative labor, may be used also for those of ordinary skill in the art
To obtain other drawings based on these drawings.
Fig. 1 is specific embodiment of the invention structural schematic diagram.
Fig. 2 is A-A directional profile structural schematic diagram in Fig. 1.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
As Figure 1-Figure 2, the invention discloses a kind of unpowered rotations of silicon wafer without wax polishing template, of the invention specific
In embodiment, including template 1 and at least one of 1 surface of template be set set film perforation 2, it is described set to be provided in film perforation 2 be used for
It adsorbs the absorption layer 3 of silicon wafer, the absorption layer 3 and sets and be provided at least one layer of rotation lubricating pad 4, the rotation between film perforation 2
4 two sides of lubricating pad pass through lubricating fluid and absorption layer 3 respectively and to set bottom absorption sliding in film perforation 2 Nian Jie.
By using above-mentioned technical proposal, the template of integral type in the prior art is changed to be arranged in setting film perforation 2 useful
It in the absorption layer 3 of absorption silicon wafer, absorption layer 3 and sets and is provided at least one layer of rotation lubricating pad 4 between film perforation 2, increase rotation
After lubricating pad 4, during silicon wafer is polished, by rotation lubricating pad 4 in setting film perforation 2 rotation and relative adsorption pad 3
Rotation occurs, so that reduce the horizontal force that absorption layer 3 is subject to reduces to extend the service life of absorption layer 3
The number for replacing maintenance, improves production efficiency, while improving the TTV of silicon chip surface after polishing, improves production and processing silicon
The quality of piece, the present invention provides a kind of long service life, the unpowered rotation of silicon wafer high in machining efficiency and low production cost without
Wax polishing template.
In the specific embodiment of the invention, the thickness of the rotation lubricating pad 4 is arranged between 75um to 200um.
It is by using above-mentioned technical proposal, the thickness setting of rotation lubricating pad 4 is adjustable between 75um to 200um, this
Sample can greatly save the quantity in stock of template 1, and when silicon wafer polishing of same diameter only needs a set of corresponding template, convenient
Adjusting different-thickness silicon wafer adaptation is set film perforation 2 and is polished.
In the specific embodiment of the invention, the rotation lubricating pad 4 with a thickness of 75um, 100um, 125um, 150um or
200um。
In the specific embodiment of the invention, the depth for setting film perforation 2 be 1200um, the absorption layer 3 with a thickness of
580um。
By using above-mentioned technical proposal, the hole depth for setting film perforation 2 is 1200um, and general rotation lubricating pad 4 is plus absorption
Pad 3, along with the overall thickness of silicon wafer is 1300 to 1350um, the thickness of absorption layer 3 is fixed as 580um, such as the silicon for needing to process
The rotation lubricating pad 4 of 200um then can be used with a thickness of 525um in piece；The silicon wafer thickness for such as needing to process is 625um, then can be used
Protection pad 4 is moistened in the rotation of 100um, mixes absorption layer 3, and so on.Two rotation lubricating pads 4 can also be used, such as the silicon wafer of processing
With a thickness of 450um, two rotation lubricating pads 4 of 75um can be added to be superimposed with 200um, mix absorption layer 3 for silicon wafer polishing.
In the specific embodiment of the invention, the material of the rotation lubricating pad 4 is carbon fiber.
By using above-mentioned technical proposal, carbon fiber is set by the material of rotation lubricating pad 4, while wear resistance is high,
It can be with the rotation in setting film perforation 2 of lesser resistance, thus the silicon chip surface TTV for coming out polishing after lubricating fluid soaks
It is obviously improved, improves the quality of polishing.
In the specific embodiment of the invention, the lubricating fluid is water.
By using above-mentioned technical proposal, water is set by lubricating fluid, one side production cost is low, on the other hand can mention
The absorption set between adsorption and rotation lubricating pad 4 and absorption layer 3 in film perforation 2 is adsorbed onto for rotation lubricating pad 4 to make
Firmly, make rotation lubricating pad 4 can be with the rotation in setting film perforation 2 of lesser resistance after soaking.
In the specific embodiment of the invention, several to set film perforation 2 circumferential equally spaced from each other from being arranged at intervals on template 1 along template 1
Surface.
By using above-mentioned technical proposal, to set film perforation 2 circumferential equally spaced from each other from being arranged at intervals on template along template 1 by several
1 surface, one side uniform polish silicon wafer make silicon wafer uniform stressed guarantee quality of finish, on the other hand improve the throwing of whole silicon wafer
Light efficiency.
According to statistics, the silicon wafer that silicon wafer is polished using template of the invention, the TTV data of silicon chip surface
Distribution are as follows: it be 50%, TTV < 5-10um is 20% that TTV < 3um, which is 30%, TTV < 3-5um,；Use template pair in the prior art
The silicon wafer that silicon wafer is polished, the TTV data distribution of silicon chip surface are as follows: TTV < 3um is that 70%, TTV < 3-5um is 20%,
TTV5-7um is 10%.
From the above, it can be seen that template of the invention substantially improves the TTV of silicon chip surface after polishing, the matter of polished silicon slice is improved
Amount.
The present invention discloses a kind of throwing of the unpowered rotation of silicon wafer without wax polishing template of efficient polishing effect in place
Light method, steps are as follows:
1), rotation lubricating pad 4 is chosen: it determines the thickness specification of silicon wafer, chooses the rotation lubricating pad 4 of corresponding thickness,
It sets after lubricating fluid is added in film perforation 2, rotation lubricating pad 4 is pasted and is set in film perforation 2；
2), silicon wafer is fixed: after lubricating fluid is added on the surface of rotation lubricating pad 4, absorption layer 3 being pasted rotation lubricating pad
4 surfaces, silicon wafer are placed on absorption layer 3；
3), operation polishing: template 1 is fixed on polishing machine, and starts revolution rotation under the driving of polishing machine, to silicon
The position that film perforation 2 is set in piece exposing is polished；
4), rotation polishes: during the polishing process, silicon wafer is made silicon wafer that stickup be driven to connect by under lateral rotary action power
Rotation occurs in rotation lubricating pad 4 for the absorption layer 3 connect, meanwhile, rotation lubricating pad 4 is in the case where the rotation of absorption layer 3 drives, relatively
It sets bottom in film perforation 2 and rotation occurs；
5), maintenance replacement: the template that stops operating 1 removes the silicon wafer on absorption layer 3, and successively takes out and set in film perforation 2
Absorption layer 3 and rotation lubricating pad 4 rejoin lubricating fluid to after setting in film perforation 2, new rotation lubricating pad 4 are pasted and is set
In film perforation 2, lubricating fluid is added to the surface of rotation lubricating pad 4, new absorption layer 3 is pasted into 4 surface of rotation lubricating pad, silicon wafer
It is placed on new absorption layer 3；
6) it, polishes rewinding: after silicon wafer completes polishing, successively removing silicon wafer, absorption layer 3 and rotation lubricating pad 4.
By using above-mentioned technical proposal, in absorption layer 3 and sets and be provided with rotation lubricating pad 4 in film perforation 2 between bottom, from
The thickness for turning lubricating pad 4 is adjustable from 75um to 200um, and the quantity in stock of template 1 is greatly saved, and the silicon wafer of same diameter only needs
A set of corresponding template can reduce production cost；Template in compared with the existing technology, the present invention greatly extend suction
The service life of attached pad 3 is tested high pressure polishing time and is promoted to about in 500mins；Rotation lubricating pad 4 uses the material of carbon fiber
Material can be such that the silicon chip surface TTV processed has aobvious after lubricating fluid is wet with the rotation of the lesser resistance of opposite film perforation 2
The improvement of work improves the silicon wafer quality of production, does not need regular replacement absorption layer 3, improves whole polishing efficiency；More
It changes absorption layer 3 and rotation lubricating pad 4 is easy to operate, further improve the efficiency of production.The longevity is used the present invention provides a kind of
The unpowered rotation of silicon wafer long, high in machining efficiency and low production cost is ordered without wax polishing template and its polishing method.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Within mind and principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (8)
1. a kind of unpowered rotation of silicon wafer is without wax polishing template, it is characterised in that: including template (1) and be arranged in template (1) table
At least one of face is set film perforation (2), described to set the absorption layer (3) being provided in film perforation (2) for adsorbing silicon wafer, the absorption layer
(3) it and sets and is provided at least one layer of rotation lubricating pad (4) between film perforation (2), rotation lubricating pad (4) two sides pass through profit respectively
Synovia and absorption layer (3) and to set the interior bottom absorption sliding of film perforation (2) Nian Jie.
2. the unpowered rotation of a kind of silicon wafer according to claim 1 is without wax polishing template, it is characterised in that: the rotation profit
The thickness of skidding (4) is arranged between 75um to 200um.
3. the unpowered rotation of a kind of silicon wafer according to claim 2 is without wax polishing template, it is characterised in that: the rotation profit
Skidding (4) with a thickness of 75um, 100um, 125um, 150um or 200um.
4. the unpowered rotation of a kind of silicon wafer according to claim 2 or 3 is without wax polishing template, it is characterised in that: described to set
The depth of film perforation (2) be 1200um, the absorption layer (3) with a thickness of 580um.
5. the unpowered rotation of a kind of silicon wafer according to claim 1 or 2 or 3 is without wax polishing template, it is characterised in that: described
The material of rotation lubricating pad (4) is carbon fiber.
6. the unpowered rotation of a kind of silicon wafer according to claim 1 is without wax polishing template, it is characterised in that: the lubricating fluid
For water.
7. the unpowered rotation of a kind of silicon wafer according to claim 1 is without wax polishing template, it is characterised in that: several to set film perforation
(2) circumferential equally spaced from each other from being arranged at intervals on template (1) surface along template (1).
8. a kind of fit polishing method of the unpowered rotation of above-mentioned silicon wafer without wax polishing template, it is characterised in that: steps are as follows:
1), rotation lubricating pad (4) is chosen: it determines the thickness specification of silicon wafer, chooses the rotation lubricating pad (4) of corresponding thickness,
It sets after lubricating fluid is added in film perforation (2), rotation lubricating pad (4) is pasted and is set in film perforation (2)；
2), silicon wafer is fixed: after lubricating fluid is added on the surface of rotation lubricating pad (4), absorption layer (3) being pasted rotation lubricating pad
(4) surface, silicon wafer are placed on absorption layer (3)；
3), operation polishing: template (1) is fixed on polishing machine, and starts revolution rotation under the driving of polishing machine, to silicon wafer
The position that film perforation (2) is set in exposing is polished；
4), rotation polishes: during the polishing process, silicon wafer is made silicon wafer that stickup be driven to connect by under lateral rotary action power
On rotation lubricating pad (4) rotation occurs for absorption layer (3), meanwhile, rotation lubricating pad (4) is in the case where absorption layer (3) rotation drives, phase
Rotation occurs for the opposed interior bottom of film perforation (2)；
5), maintenance replacement: the template that stops operating (1) removes the silicon wafer on absorption layer (3), and successively takes out and set in film perforation (2)
Absorption layer (3) and rotation lubricating pad (4) rejoin lubricating fluid to after setting in film perforation (2), by new rotation lubricating pad (4)
It pastes and sets in film perforation (2), lubricating fluid is added to the surface of rotation lubricating pad (4), new absorption layer (3) is pasted into rotation profit
Skidding (4) surface, silicon wafer are placed on new absorption layer (3)；
6) it, polishes rewinding: after silicon wafer completes polishing, successively removing silicon wafer, absorption layer (3) and rotation lubricating pad (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811609045.3A CN109605137A (en) | 2018-12-27 | 2018-12-27 | A kind of unpowered rotation of silicon wafer is without wax polishing template and its polishing method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811609045.3A CN109605137A (en) | 2018-12-27 | 2018-12-27 | A kind of unpowered rotation of silicon wafer is without wax polishing template and its polishing method |
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| CN109605137A true CN109605137A (en) | 2019-04-12 |
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| CN201811609045.3A Pending CN109605137A (en) | 2018-12-27 | 2018-12-27 | A kind of unpowered rotation of silicon wafer is without wax polishing template and its polishing method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112873074A (en) * | 2021-03-10 | 2021-06-01 | 安徽禾臣新材料有限公司 | Wax-free pad for polishing and production method thereof |
| CN113211306A (en) * | 2021-05-28 | 2021-08-06 | 福建晶安光电有限公司 | Ceramic carrier disc for polishing semiconductor wafer |
| CN114800254A (en) * | 2022-03-21 | 2022-07-29 | 安徽禾臣新材料有限公司 | Wax-free pad for polishing and preparation method thereof |
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| CN209239654U (en) * | 2018-12-27 | 2019-08-13 | 衢州晶哲电子材料有限公司 | A kind of unpowered rotation of silicon wafer is without wax polishing template |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112873074A (en) * | 2021-03-10 | 2021-06-01 | 安徽禾臣新材料有限公司 | Wax-free pad for polishing and production method thereof |
| CN113211306A (en) * | 2021-05-28 | 2021-08-06 | 福建晶安光电有限公司 | Ceramic carrier disc for polishing semiconductor wafer |
| CN114800254A (en) * | 2022-03-21 | 2022-07-29 | 安徽禾臣新材料有限公司 | Wax-free pad for polishing and preparation method thereof |
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