CN112864024A - Ceramic circuit board and manufacturing method thereof - Google Patents
Ceramic circuit board and manufacturing method thereof Download PDFInfo
- Publication number
- CN112864024A CN112864024A CN202110026524.8A CN202110026524A CN112864024A CN 112864024 A CN112864024 A CN 112864024A CN 202110026524 A CN202110026524 A CN 202110026524A CN 112864024 A CN112864024 A CN 112864024A
- Authority
- CN
- China
- Prior art keywords
- film layer
- layer
- conductive
- ceramic
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/027—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
Abstract
The application discloses a ceramic circuit board and a manufacturing method thereof, wherein the manufacturing method of the ceramic circuit board comprises the following steps: manufacturing a conductive film layer on the ceramic substrate; and etching the conductive film layer by adopting laser or removing part of the conductive film layer by adopting a CNC (computerized numerical control) processing mode according to a preset circuit pattern to obtain the patterned circuit layer. Through making the conductive film layer on the ceramic substrate, and according to the predetermined circuit pattern, adopt the laser etching technique to directly carry out the sculpture to the conductive film layer, obtain graphical circuit layer, the step such as subsides dry film, exposure, development, electroplating thickening, remove the dry film, remove titanium, copper layer in the manufacture craft of current ceramic circuit board has been saved, the manufacture process of ceramic circuit board has been simplified greatly, avoid simultaneously because of exposing, developing, electroplating thickening, the pollutant discharge problem that processes such as chemical stripping etching brought, have important meaning to improving the quality stability and energy-concerving and environment-protective of ceramic circuit board.
Description
Technical Field
The application relates to the technical field of circuit packaging, in particular to a ceramic circuit board and a manufacturing method thereof.
Background
The ceramic material has the advantages of high reliability, good thermal conductivity, thermal expansion coefficient matched with chip material, high electrical insulation strength and the like, is an ideal heat dissipation material for packaging technology, and the development and trend of the existing ceramic packaging technology continuously develop towards the directions of low thermal resistance, high reliability, long service life, easy processing, small size, low cost and the like. Ceramic packaging occupies a place in the field of power electronic devices all the time due to the characteristics of good heat conduction, high reliability and the like.
The substrate of the initial ceramic package mainly adopts LTCC (Low Temperature co-fired ceramic) and HTCC (High Temperature co-fired ceramic) process technologies, and due to the defect of processing precision, the problem is solved by the invention of a DPC (Direct Plating Copper) process which is a new technology. The DPC ceramic circuit board adopts the technology of combining a film circuit and an electroplating process, the circuit is manufactured on a film metalized ceramic substrate in an image transfer mode, and then the perforation electroplating technology is adopted to form vertical interconnection among high-density double-sided wiring lines, so that the DPC ceramic circuit board has the characteristics of high circuit precision, high surface flatness, high insulation and high heat conduction, and rapidly occupies an important market position in the field of high-power packaging.
The traditional manufacturing process flow of the DPC ceramic circuit board comprises the following typical steps: providing a ceramic substrate, plating thin copper in vacuum, pasting a dry film, exposing and developing, electroplating copper, chemically stripping and etching, performing surface treatment, and forming a ceramic circuit board. Chinese patent No. CN102709439B discloses an LED ceramic support and a method for preparing the same, the method comprising the steps of: (1) punching; (2) ultrasonic cleaning; (3) etching by an ion source; (4) performing magnetron sputtering; (5) chemical copper deposition; (6) pasting a dry film, exposing and developing; (7) electroplating and thickening; (9) removing the dry film; (10) removing titanium and copper layers; (11) and (4) removing tin. The existing DPC ceramic circuit board manufacturing process has the following defects: the production process is long, the working procedures are multiple, the control of the technological process is complex, the product quality is easy to be unstable, and the production cost is increased. In addition, the procedures of exposure, development, electroplating and chemical stripping and etching in the prior art involve pollutant discharge and are easy to pollute the environment.
Therefore, the research on how to simplify the manufacturing process of the ceramic circuit board and reduce pollution has important significance on improving the quality stability of the ceramic circuit board, saving energy and protecting environment.
Disclosure of Invention
The ceramic circuit board and the manufacturing method thereof are provided, and the manufacturing process of the ceramic circuit board is simplified and pollution is reduced by improving the manufacturing method of the ceramic circuit board.
The purpose of the application is realized by adopting the following technical scheme:
a manufacturing method of a ceramic circuit board comprises the following steps:
manufacturing a conductive film layer on the ceramic substrate;
and etching the conductive film layer by adopting laser or removing part of the conductive film layer by adopting a CNC (computerized numerical control) processing mode according to a preset circuit pattern to obtain the patterned circuit layer.
Preferably, the method further comprises the step of pretreating the ceramic substrate before the conductive film layer is manufactured on the ceramic substrate.
Preferably, the manufacturing of the conductive film layer on the ceramic substrate includes: and manufacturing a conductive film layer on the ceramic substrate by adopting a vacuum coating method.
Preferably, the vacuum coating method is magnetron sputtering.
Preferably, the manufacturing of the conductive film layer on the ceramic substrate includes: and manufacturing a first conductive layer on the ceramic substrate by adopting a vacuum coating method, manufacturing a second conductive layer on the first conductive layer by adopting an electroplating method, and forming the conductive film layer by the first conductive layer and the second conductive layer.
Preferably, the first conductive layer includes a titanium conductive layer and/or a first copper conductive layer formed on the ceramic substrate, and the second conductive layer includes a second copper conductive layer.
Preferably, the conductive film layer includes a copper metal film layer, or the conductive film layer includes a titanium metal film layer and a copper metal film layer sequentially formed on the ceramic substrate.
Preferably, the thickness of the titanium metal film layer is 100nm-300nm, and/or the thickness of the copper metal film layer is 500nm-100000 nm.
Preferably, the method further comprises manufacturing a protective film layer on the patterned circuit layer after obtaining the patterned circuit layer.
Preferably, the protective film layer comprises one or both of silver and gold.
Preferably, when the protective film layer comprises silver, the step of forming the protective film layer on the patterned circuit layer comprises: manufacturing a silver film layer on the patterned circuit layer, or sequentially manufacturing a nickel film layer and a silver film layer on the patterned circuit layer;
when the protection film layer includes gold, making the protection film layer on the patterned circuit layer includes: and sequentially manufacturing a nickel film layer and a gold film layer on the graphical circuit layer, or sequentially manufacturing a nickel film layer, a palladium film layer and a gold film layer on the graphical circuit layer.
Preferably, when the protective film layer includes silver, the thickness of the protective film layer is 0.1 μm to 5 μm; when the protective film layer comprises gold, the thickness of the protective film layer is 0.01-0.3 μm.
The ceramic circuit board comprises a ceramic substrate and a graphical circuit layer on the ceramic substrate, wherein the graphical circuit layer is obtained by etching a conductive film layer by adopting laser or removing part of the conductive film layer by adopting a CNC (computerized numerical control) processing mode according to a preset circuit pattern.
Preferably, the conductive film layer includes a titanium metal film layer and a copper metal film layer sequentially formed on the ceramic substrate.
Preferably, a protective film layer is further included disposed on the patterned circuit layer.
Preferably, the protective film layer comprises one or both of silver and gold.
Compared with the prior art, the technical effects of the application at least comprise:
the manufacturing method of the ceramic circuit board comprises the steps of manufacturing a conductive film layer on a ceramic substrate, directly etching the conductive film layer by adopting a laser etching technology according to a preset circuit pattern to obtain a patterned circuit layer, omitting the steps of dry film pasting, exposure, development, electroplating thickening, dry film removal, titanium removal, a copper layer and the like in the manufacturing process of the existing ceramic circuit board, greatly simplifying the manufacturing process of the ceramic circuit board, and simultaneously avoiding the problem of pollutant discharge caused by the processes of exposure, development, electroplating thickening, chemical film removal etching and the like, and has important significance for improving the quality stability and energy conservation and environmental protection of the ceramic circuit board.
Drawings
The present application is further described below with reference to the drawings and examples.
Fig. 1 is a schematic flow chart of a manufacturing method of a ceramic circuit board provided in embodiment 1 of the present application.
Fig. 2 is a schematic cross-sectional view of a ceramic wiring board in an embodiment of the present application on which a conductive film layer is formed.
Fig. 3 is a schematic cross-sectional view of the conductive film layer of fig. 2 after etching or removing a portion of the conductive film layer.
Fig. 4 is a schematic cross-sectional view of fig. 3 after a protective film layer is formed on the conductive film layer.
Fig. 5 is a schematic flow chart of a manufacturing method of the ceramic circuit board provided in embodiment 2 of the present application.
Fig. 6 is a schematic flow chart of a manufacturing method of a ceramic circuit board provided in embodiment 3 of the present application.
Fig. 7 is a schematic flow chart of a manufacturing method of a ceramic circuit board provided in embodiment 4 of the present application.
In the figure: 10. a ceramic substrate; 20. a conductive film layer; 30. and (5) a protective film layer.
Detailed Description
The present application is further described with reference to the accompanying drawings and the detailed description, and it should be noted that, in the present application, the embodiments or technical features described below may be arbitrarily combined to form a new embodiment without conflict.
The words used in this application to describe positions and orientations, such as "up" and "down", are used in the description of the figures, but may be changed as needed and still be within the scope of the present application. The drawings in the present application are only for illustrating the relative positional relationship, and the layer thicknesses in some portions are exaggerated in the drawing for easy understanding, and the layer thicknesses in the drawings do not represent the proportional relationship of the actual layer thicknesses.
Example 1
Fig. 1 is a schematic flow chart of a manufacturing method of a ceramic circuit board provided in embodiment 1 of the present application, and the manufacturing method of the ceramic circuit board of the present embodiment can simplify a manufacturing process of an existing ceramic circuit board.
Referring to fig. 1, a method for manufacturing a ceramic wiring board provided in embodiment 1 of the present application includes steps S101 and S102, and further includes step S100.
Step S100: the ceramic substrate 10 is pretreated.
The main component of the ceramic substrate 10 is alumina (Al)2O3) The mass percentage of the alumina can be more than 95 percent. In some embodiments, the pre-treating of the ceramic substrate 10 includes cleaning the ceramic substrate 10, wherein the cleaning may be performed by ultrasonic cleaning, removing impurities and dirt on the surface of the ceramic substrate 10 by cleaning, and placing the ceramic substrate 10 into an oven for drying after cleaning. The pretreatment of the ceramic substrate 10 may further include performing microetching and roughening, and acid-base treatment on the surface of the ceramic substrate 10, where the microetching and roughening and the acid-base treatment may be performed by using known technologies, and are not described herein again.
Step S101: a conductive film layer 20 is formed on the ceramic substrate 10.
Referring to fig. 2, the conductive film layer 20 may be a film layer formed of one or more of titanium, copper, chromium, tungsten, nickel or an alloy thereof, and in some embodiments, the conductive film layer 20 includes a copper metal film layer, the copper metal film layer is a conductive layer, the thickness of the copper metal film layer may be 500nm to 100000nm, and the thickness of the copper metal film layer may be 1000nm, 5000nm, 10000nm, 30000nm, 50000nm, 70000nm, and 90000nm, as required.
In some embodiments, the conductive film layer 20 includes a copper metal film layer, or the conductive film layer 20 includes a titanium metal film layer and a copper metal film layer sequentially formed on the ceramic substrate 10, the copper metal film layer is a conductive layer, and the titanium metal film layer is used as a primer layer before the copper metal film layer is formed, so that the adhesion between the copper metal film layer and the ceramic substrate 10 can be increased, and the copper metal film layer and the ceramic substrate 10 are combined more firmly. The thickness of the titanium metal film layer can be 100nm-300nm, and the thickness of the titanium metal film layer can be 120nm, 150nm, 180nm, 200nm, 220nm, 250nm and 280nm according to requirements. The thickness of the copper metal film layer can be 500nm-100000nm, and the thickness of the copper metal film layer can be 1000nm, 5000nm, 10000nm, 30000nm, 50000nm, 70000nm and 90000nm according to requirements. Compared with the existing manufacturing process of the ceramic circuit board, the present embodiment can directly form the thick conductive film layer 20 on the ceramic substrate 10.
The method for forming the conductive film layer 20 on the ceramic substrate 10 may adopt a method for forming the conductive film layer 20 known in the circuit board industry, and in some embodiments, the method for forming the conductive film layer 20 on the ceramic substrate 10 includes: the conductive film layer 20 is manufactured on the ceramic substrate 10 by adopting a vacuum coating method, the vacuum coating method is preferably magnetron sputtering, and compared with the conventional method of thickening a metal film layer by an electroplating method, the vacuum coating method of the embodiment can reduce pollutant emission and is more environment-friendly.
In some alternative embodiments, fabricating the conductive film layer 20 on the ceramic substrate 10 includes: a first conductive layer is formed on the ceramic substrate 10 by a vacuum coating method, a second conductive layer is formed on the first conductive layer by an electroplating method, and the first conductive layer and the second conductive layer form a conductive film layer 20. Specifically, a magnetron sputtering method may be used to fabricate a first conductive layer with a relatively small thickness on the ceramic substrate 10, and then an electroplating method is used to fabricate a second conductive layer on the first conductive layer, where the thickness of the second conductive layer may be greater than that of the first conductive layer, the thickness ratio of the first conductive layer to the second conductive layer may be adjusted as required, and a mature electroplating method may be used to conveniently fabricate a second conductive layer with a relatively large thickness, and thicken the first conductive layer, so as to form the conductive film layer 20.
In some embodiments, the first conductive layer comprises a titanium conductive layer and/or a first copper conductive layer formed on the ceramic substrate 10, and the second conductive layer comprises a second copper conductive layer. When the first conductive layer includes a titanium conductive layer and a first copper conductive layer, the titanium conductive layer and the first copper conductive layer are preferably formed in this order on the ceramic substrate 10. The thickness of the first copper conductive layer may be 100nm to 30000nm, for example 200nm, 1000nm, 3000nm, 5000nm, 10000nm, 20000 nm; the thickness of the titanium conductive layer may be 100nm to 300nm, such as 120nm, 150nm, 180nm, 200nm, 220nm, 250nm, 280 nm; the thickness of the second copper conductive layer may be 400nm to 90000nm, for example 600nm, 1000nm, 3000nm, 5000nm, 10000nm, 30000nm, 50000nm, 60000nm, 80000 nm.
Step S102: and etching the conductive film layer 20 by using laser according to a preset circuit pattern to obtain a patterned circuit layer.
Referring to fig. 3, a more accurate circuit pattern can be obtained by directly etching the conductive film layer 20 by using a laser etching technique, the laser etching can be completed according to actual requirements such as composition, thickness, etching depth and the like of the conductive film layer 20, the power of the used laser is, for example, 1mW-2000W, the wavelength is, for example, 200nm-3000nm, and the laser with different powers and wavelengths is specifically selected for etching according to etching requirements.
The method for manufacturing a ceramic circuit board according to this embodiment may further include inspecting the ceramic circuit board to obtain a molded ceramic circuit board.
According to the manufacturing method of the ceramic circuit board, the conductive film layer 20 is manufactured on the ceramic substrate 10, the conductive film layer 20 is directly etched by adopting a laser etching technology according to a preset circuit pattern, and the patterned circuit layer is obtained, so that the steps of dry film pasting, exposure, development, electroplating thickening, dry film removing, titanium removing, copper layer removing and the like in the existing manufacturing process of the ceramic circuit board are omitted, the manufacturing process of the ceramic circuit board is greatly simplified, the problem of pollutant discharge caused by the processes of exposure, development, electroplating thickening, chemical film removing etching and the like is avoided, and the method has important significance for improving the quality stability of the ceramic circuit board and energy conservation and environmental protection.
Example 2
Fig. 5 is a schematic flow chart of a manufacturing method of a ceramic circuit board according to embodiment 2 of the present application, where the manufacturing method of the ceramic circuit board according to this embodiment can simplify a manufacturing process of an existing ceramic circuit board.
Referring to fig. 5, a method for manufacturing a ceramic wiring board provided in embodiment 2 of the present application includes steps S201 to S203, and further includes step S200.
Step S200: the ceramic substrate 10 is pretreated.
The process of pretreating the ceramic substrate 10 in step S200 may be the same as the process of pretreating the ceramic substrate 10 in step S100 in embodiment 1, and is not repeated herein.
Step S201: a conductive film layer 20 is formed on the ceramic substrate 10.
The process of fabricating the conductive film layer 20 on the ceramic substrate 10 in step S201 may be the same as the process of fabricating the conductive film layer 20 on the ceramic substrate 10 in step S101 in embodiment 1, and is not repeated herein.
Step S202: and etching the conductive film layer 20 by using laser according to a preset circuit pattern to obtain a patterned circuit layer.
The process of etching the conductive film layer 20 with the laser to obtain the patterned circuit layer in step S202 may be the same as the process of etching the conductive film layer 20 with the laser to obtain the patterned circuit layer in step S102 in embodiment 1, and details thereof are omitted.
Step S203: a protective film layer 30 is formed on the patterned circuit layer.
Referring to fig. 4, the circuit layer is generally made of a metal material, and is easily oxidized and deteriorated after contacting with air, which results in a decrease in electrical properties and affects the reliability of the ceramic circuit board, in this embodiment, a protective film 30 is formed on the patterned circuit layer, and the protective film 30 includes one or both of silver and gold.
In some embodiments, when the protective film 30 comprises silver, fabricating the protective film 30 on the patterned circuit layer comprises: the silver film layer is formed on the patterned circuit layer, or the nickel film layer and the silver film layer are sequentially formed on the patterned circuit layer, and the protective film layer 30 containing silver may be formed by using a mask and a vacuum coating method, and may specifically adopt a known technique, which is not described herein again. When the protective film layer 30 includes silver, the thickness of the protective film layer 30 is 0.1 μm to 5 μm, preferably 0.2 μm to 1 μm.
In some embodiments, when the protective film 30 comprises gold, fabricating the protective film 30 on the patterned circuit layer comprises: the nickel film layer and the gold film layer are sequentially formed on the patterned circuit layer, or the nickel film layer, the palladium film layer and the gold film layer are sequentially formed on the patterned circuit layer, and the protective film layer 30 containing gold may be formed by a vacuum coating method using a mask, and may specifically adopt a known technology, which is not described herein. When the protective film layer 30 includes gold, the thickness of the protective film layer 30 is 0.01 μm to 0.3 μm, preferably 0.025 μm to 0.1 μm.
The method for manufacturing a ceramic circuit board according to this embodiment may further include inspecting the ceramic circuit board to obtain a molded ceramic circuit board.
According to the manufacturing method of the ceramic circuit board, the conductive film layer 20 is manufactured on the ceramic substrate 10, the conductive film layer 20 is directly etched by adopting a laser etching technology according to a preset circuit pattern to obtain a patterned circuit layer, and the circuit layer is protected by manufacturing the protective film layer 30 on the patterned circuit layer, so that the steps of dry film pasting, exposure, development, electroplating thickening, dry film removing, titanium removing, copper layer removing and the like in the conventional manufacturing process of the ceramic circuit board are omitted, the manufacturing process of the ceramic circuit board is greatly simplified, the problem of pollutant discharge caused by the processes of exposure, development, electroplating thickening, chemical film removing etching and the like is avoided, and the manufacturing method has important significance for improving the quality stability of the ceramic circuit board and energy conservation and environmental protection.
Example 3
Fig. 6 is a schematic flow chart of a manufacturing method of a ceramic circuit board according to embodiment 3 of the present application, where the manufacturing method of the ceramic circuit board according to this embodiment can simplify a manufacturing process of an existing ceramic circuit board.
Referring to fig. 6, a method for manufacturing a ceramic wiring board provided in embodiment 3 of the present application includes steps S301 and S302, and further includes step S300.
Step S300: the ceramic substrate 10 is pretreated.
The main component of the ceramic substrate 10 is alumina (Al)2O3) The mass percentage of the alumina can be more than 95 percent. In some embodiments, the pre-treating of the ceramic substrate 10 includes cleaning the ceramic substrate 10 by ultrasonic cleaning to remove impurities and impurities on the surface of the ceramic substrate 10And (4) dirt, and after cleaning, putting the ceramic substrate 10 into an oven for drying for later use. The pretreatment of the ceramic substrate 10 may further include performing microetching and roughening, and acid-base treatment on the surface of the ceramic substrate 10, where the microetching and roughening and the acid-base treatment may be performed by using known technologies, and are not described herein again.
Step S301: a conductive film layer 20 is formed on the ceramic substrate 10.
Referring to fig. 2, the conductive film layer 20 may be a film layer formed of one or more of titanium, copper, chromium, tungsten, nickel or an alloy thereof, and in some embodiments, the conductive film layer 20 includes a copper metal film layer, the copper metal film layer is a conductive layer, the thickness of the copper metal film layer may be 500nm to 100000nm, and the thickness of the copper metal film layer may be 1000nm, 5000nm, 10000nm, 30000nm, 50000nm, 70000nm, and 90000nm, as required.
In some embodiments, the conductive film layer 20 includes a copper metal film layer, or the conductive film layer 20 includes a titanium metal film layer and a copper metal film layer sequentially formed on the ceramic substrate 10, the copper metal film layer is a conductive layer, and the titanium metal film layer is used as a primer layer before the copper metal film layer is formed, so that the adhesion between the copper metal film layer and the ceramic substrate 10 can be increased, and the copper metal film layer and the ceramic substrate 10 are combined more firmly. The thickness of the titanium metal film layer can be 100nm-300nm, and the thickness of the titanium metal film layer can be 120nm, 150nm, 180nm, 200nm, 220nm, 250nm and 280nm according to requirements. The thickness of the copper metal film layer can be 500nm-100000nm, and the thickness of the copper metal film layer can be 1000nm, 5000nm, 10000nm, 30000nm, 50000nm, 70000nm and 90000nm according to requirements. Compared with the existing manufacturing process of the ceramic circuit board, the present embodiment can directly form the thick conductive film layer 20 on the ceramic substrate 10.
The method for forming the conductive film layer 20 on the ceramic substrate 10 may adopt a method for forming the conductive film layer 20 known in the circuit board industry, and in some embodiments, the method for forming the conductive film layer 20 on the ceramic substrate 10 includes: the conductive film layer 20 is manufactured on the ceramic substrate 10 by adopting a vacuum coating method, the vacuum coating method is preferably magnetron sputtering, and compared with the conventional method of thickening a metal film layer by an electroplating method, the vacuum coating method of the embodiment can reduce pollutant emission and is more environment-friendly.
In some alternative embodiments, fabricating the conductive film layer 20 on the ceramic substrate 10 includes: a first conductive layer is formed on the ceramic substrate 10 by a vacuum coating method, a second conductive layer is formed on the first conductive layer by an electroplating method, and the first conductive layer and the second conductive layer form a conductive film layer 20. Specifically, a magnetron sputtering method may be used to fabricate a first conductive layer with a small thickness on the ceramic substrate 10, and then a plating method is used to fabricate a second conductive layer on the first conductive layer, where the thickness of the second conductive layer may be greater than that of the first conductive layer, and the thickness ratio of the first conductive layer to the second conductive layer may be adjusted as required, and a plating method with a mature process may be used to conveniently fabricate a second conductive layer with a large thickness, and thicken the first conductive layer, so as to form the conductive film layer 20.
In some embodiments, the first conductive layer comprises a titanium conductive layer and/or a first copper conductive layer formed on the ceramic substrate 10, and the second conductive layer comprises a second copper conductive layer. When the first conductive layer includes a titanium conductive layer and a first copper conductive layer, the titanium conductive layer and the first copper conductive layer are preferably formed in this order on the ceramic substrate 10. The thickness of the first copper conductive layer may be 100nm to 30000nm, for example 200nm, 1000nm, 3000nm, 5000nm, 10000nm, 20000 nm; the thickness of the titanium conductive layer may be 100nm to 300nm, such as 120nm, 150nm, 180nm, 200nm, 220nm, 250nm, 280 nm; the thickness of the second copper conductive layer may be 400nm to 90000nm, for example 600nm, 1000nm, 3000nm, 5000nm, 10000nm, 30000nm, 50000nm, 60000nm, 80000 nm.
Step S302: and removing part of the conductive film layer 20 by adopting a CNC (computerized numerical control) processing mode according to a preset circuit pattern to obtain a patterned circuit layer.
Referring to fig. 3, specifically, a numerical control machine tool for CNC machining (computer numerical control precision machining) is programmed and controlled based on a preset circuit pattern, a cutting path and cutting parameters of a tool are set, and a portion of the conductive film layer 20 on the ceramic substrate 10 is removed according to the preset parameters to obtain a patterned circuit layer.
The method for manufacturing a ceramic circuit board according to this embodiment may further include inspecting the ceramic circuit board to obtain a molded ceramic circuit board.
According to the manufacturing method of the ceramic circuit board, the conductive film layer 20 is manufactured on the ceramic substrate 10, and according to the preset circuit pattern, the CNC processing mode is adopted to remove part of the conductive film layer 20 to obtain the patterned circuit layer, so that the steps of dry film pasting, exposure, development, electroplating thickening, dry film removing, titanium removing, copper layer removing and the like in the existing manufacturing process of the ceramic circuit board are omitted, the manufacturing process of the ceramic circuit board is greatly simplified, meanwhile, the problem of pollutant discharge caused by the processes of exposure, development, electroplating thickening, chemical film removing etching and the like is avoided, and the method has important significance for improving the quality stability of the ceramic circuit board and energy conservation and environmental protection.
Example 4
Fig. 7 is a schematic flow chart of a manufacturing method of a ceramic circuit board according to embodiment 4 of the present application, where the manufacturing method of the ceramic circuit board according to this embodiment can simplify a manufacturing process of an existing ceramic circuit board.
Referring to fig. 7, a method for manufacturing a ceramic wiring board provided in embodiment 4 of the present application includes steps S401 to S403, and further includes step S400.
Step S400: the ceramic substrate 10 is pretreated.
The process of pretreating the ceramic substrate 10 in step S400 may be the same as the process of pretreating the ceramic substrate 10 in step S300 in embodiment 3, and is not repeated herein.
Step S401: a conductive film layer 20 is formed on the ceramic substrate 10.
The process of fabricating the conductive film layer 20 on the ceramic substrate 10 in step S401 may be the same as the process of fabricating the conductive film layer 20 on the ceramic substrate 10 in step S301 in embodiment 3, and is not repeated herein.
Step S402: and removing part of the conductive film layer 20 by adopting a CNC (computerized numerical control) processing mode according to a preset circuit pattern to obtain a patterned circuit layer.
The process of removing a portion of the conductive film layer 20 by CNC processing in step S402 to obtain the patterned circuit layer may be the same as the process of removing a portion of the conductive film layer 20 by CNC processing in step S302 in embodiment 3 to obtain the patterned circuit layer, which is not described herein again.
Step S403: a protective film layer 30 is formed on the patterned circuit layer.
Referring to fig. 4, the circuit layer is generally made of a metal material, and is easily oxidized and deteriorated after contacting with air, which results in a decrease in electrical properties and affects the reliability of the ceramic circuit board, in this embodiment, a protective film 30 is formed on the patterned circuit layer, and the protective film 30 includes one or both of silver and gold.
In some embodiments, when the protective film 30 comprises silver, fabricating the protective film 30 on the patterned circuit layer comprises: the silver film layer is formed on the patterned circuit layer, or the nickel film layer and the silver film layer are sequentially formed on the patterned circuit layer, and the protective film layer 30 containing silver may be formed by using a mask and a vacuum coating method, and may specifically adopt a known technique, which is not described herein again. When the protective film layer 30 includes silver, the thickness of the protective film layer 30 is 0.1 μm to 5 μm, preferably 0.2 μm to 1 μm.
In some embodiments, when the protective film 30 comprises gold, fabricating the protective film 30 on the patterned circuit layer comprises: the nickel film layer and the gold film layer are sequentially formed on the patterned circuit layer, or the nickel film layer, the palladium film layer and the gold film layer are sequentially formed on the patterned circuit layer, and the protective film layer 30 containing gold may be formed by a vacuum coating method using a mask, and may specifically adopt a known technology, which is not described herein. When the protective film layer 30 includes gold, the thickness of the protective film layer 30 is 0.01 μm to 0.3 μm, preferably 0.025 μm to 0.1 μm.
The method for manufacturing a ceramic circuit board according to this embodiment may further include inspecting the ceramic circuit board to obtain a molded ceramic circuit board.
According to the manufacturing method of the ceramic circuit board, the conductive film layer 20 is manufactured on the ceramic substrate 10, part of the conductive film layer 20 is removed in a CNC (computer numerical control) processing mode according to a preset circuit pattern to obtain a graphical circuit layer, and the circuit layer is protected by manufacturing the protective film layer 30 on the graphical circuit layer, so that the steps of dry film pasting, exposure, development, electroplating thickening, dry film removing, titanium removing, copper layer removing and the like in the conventional manufacturing process of the ceramic circuit board are omitted, the manufacturing process of the ceramic circuit board is greatly simplified, the problem of pollutant discharge caused by the processes of exposure, development, electroplating thickening, chemical film removing etching and the like is avoided, and the manufacturing method has important significance for improving the quality stability of the ceramic circuit board and saving energy and protecting environment.
Example 5
The embodiment 5 of the application provides a ceramic circuit board, including graphical circuit layer on ceramic substrate 10 and the ceramic substrate 10, graphical circuit layer adopts laser to carry out the sculpture or adopt the CNC mode of processing to get rid of partial electrically conductive rete 20 and obtain according to predetermined circuit figure to electrically conductive rete 20.
Specifically, the conductive film layer 20 may be a film layer formed of one or more of titanium, copper, chromium, tungsten, nickel, or an alloy thereof, and in some embodiments, the conductive film layer 20 includes a copper metal film layer, the copper metal film layer is a conductive layer, the thickness of the copper metal film layer may be 500nm to 100000nm, and the thickness of the copper metal film layer may be 1000nm, 5000nm, 10000nm, 30000nm, 50000nm, 70000nm, and 90000nm, as required.
In some embodiments, the conductive film layer 20 includes a titanium metal film layer and a copper metal film layer sequentially formed on the ceramic substrate 10, the copper metal film layer is a conductive layer, and the titanium metal film layer is used as a primer layer before the copper metal film layer is formed, so that the adhesion between the copper metal film layer and the ceramic substrate 10 can be increased, and the copper metal film layer and the ceramic substrate 10 can be more firmly combined. The thickness of the titanium metal film layer can be 100nm-300nm, and the thickness of the titanium metal film layer can be 120nm, 150nm, 180nm, 200nm, 220nm, 250nm and 280nm according to requirements. The thickness of the copper metal film layer can be 500nm-100000nm, and the thickness of the copper metal film layer can be 1000nm, 5000nm, 10000nm, 30000nm, 50000nm, 70000nm and 90000nm according to requirements.
In some embodiments, the ceramic wiring board further includes a protective film layer 30 disposed on the patterned circuit layer, the protective film layer 30 preferably including one or both of silver and gold. When the protective film layer 30 includes silver, the thickness of the protective film layer 30 may be 0.1 μm to 5 μm, preferably 0.2 μm to 1 μm, and the protective film layer 30 may include a silver film layer or a nickel film layer and a silver film layer sequentially formed on the patterned circuit layer. When the protective film layer 30 includes gold, the thickness of the protective film layer 30 may be 0.01 μm to 0.3 μm, preferably 0.025 μm to 0.1 μm, and the protective film layer 30 may include a nickel film layer and a gold film layer sequentially formed on the patterned circuit layer, or a nickel film layer, a palladium film layer and a gold film layer sequentially formed on the patterned circuit layer.
The embodiment of the application provides a ceramic circuit board, graphical circuit layer is according to predetermined circuit pattern, adopt laser to carry out the sculpture to electrically conductive rete 20 or adopt CNC processing mode to get rid of partial electrically conductive rete 20 and obtain, the subsides dry film in the preparation technology of having saved current ceramic circuit board, the exposure, develop, electroplate the thickening, go the dry film, remove titanium, copper layer etc. step, ceramic circuit board's preparation process has been simplified greatly, simultaneously avoided because of the exposure, develop, electroplate the thickening, the pollutant discharge problem that processes such as chemical stripping etching brought, have important meaning to the quality stability and energy-concerving and environment-protective of improving ceramic circuit board.
The foregoing description and drawings are only for purposes of illustrating the preferred embodiments of the present application and are not intended to limit the present application, which is, therefore, to the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the present application.
Claims (16)
1. The manufacturing method of the ceramic circuit board is characterized by comprising the following steps:
manufacturing a conductive film layer on the ceramic substrate;
and etching the conductive film layer by adopting laser or removing part of the conductive film layer by adopting a CNC (computerized numerical control) processing mode according to a preset circuit pattern to obtain the patterned circuit layer.
2. The method of claim 1, further comprising pretreating the ceramic substrate before forming the conductive film layer on the ceramic substrate.
3. The method of claim 1, wherein the step of forming the conductive film layer on the ceramic substrate comprises: and manufacturing a conductive film layer on the ceramic substrate by adopting a vacuum coating method.
4. The method for manufacturing the ceramic circuit board according to claim 3, wherein the vacuum coating method is magnetron sputtering.
5. The method of claim 1, wherein the step of forming the conductive film layer on the ceramic substrate comprises: and manufacturing a first conductive layer on the ceramic substrate by adopting a vacuum coating method, manufacturing a second conductive layer on the first conductive layer by adopting an electroplating method, and forming the conductive film layer by the first conductive layer and the second conductive layer.
6. The method according to claim 5, wherein the first conductive layer comprises a titanium conductive layer and/or a first copper conductive layer formed on the ceramic substrate, and the second conductive layer comprises a second copper conductive layer.
7. The method of manufacturing a ceramic circuit board according to claim 1, wherein the conductive film layer includes a copper metal film layer, or the conductive film layer includes a titanium metal film layer and a copper metal film layer formed on the ceramic substrate in this order.
8. The method of claim 7, wherein the thickness of the titanium metal film layer is 100nm to 300nm, and/or the thickness of the copper metal film layer is 500nm to 100000 nm.
9. The method of manufacturing a ceramic wiring board according to claim 1, further comprising, after obtaining the patterned circuit layer, manufacturing a protective film layer on the patterned circuit layer.
10. The method of claim 9, wherein the protective film layer comprises one or both of silver and gold.
11. The method of claim 10, wherein when the protective film layer comprises silver, the step of forming the protective film layer on the patterned circuit layer comprises: manufacturing a silver film layer on the patterned circuit layer, or sequentially manufacturing a nickel film layer and a silver film layer on the patterned circuit layer;
when the protection film layer includes gold, making the protection film layer on the patterned circuit layer includes: and sequentially manufacturing a nickel film layer and a gold film layer on the graphical circuit layer, or sequentially manufacturing a nickel film layer, a palladium film layer and a gold film layer on the graphical circuit layer.
12. The method of manufacturing a ceramic wiring board according to claim 10, wherein when the protective film layer includes silver, the thickness of the protective film layer is 0.1 μm to 5 μm; when the protective film layer comprises gold, the thickness of the protective film layer is 0.01-0.3 μm.
13. The ceramic circuit board is characterized by comprising a ceramic substrate and a graphical circuit layer on the ceramic substrate, wherein the graphical circuit layer is obtained by etching a conductive film layer by laser or removing part of the conductive film layer by adopting a CNC (computerized numerical control) processing mode according to a preset circuit pattern.
14. The ceramic wiring board of claim 13, wherein the conductive film layer comprises a titanium metal film layer and a copper metal film layer sequentially formed on the ceramic substrate.
15. The ceramic wiring board of claim 13, further comprising a protective film layer disposed on the patterned circuit layer.
16. The ceramic wiring board of claim 15, wherein the protective film layer comprises one or both of silver and gold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110026524.8A CN112864024A (en) | 2021-01-08 | 2021-01-08 | Ceramic circuit board and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110026524.8A CN112864024A (en) | 2021-01-08 | 2021-01-08 | Ceramic circuit board and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112864024A true CN112864024A (en) | 2021-05-28 |
Family
ID=76001878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110026524.8A Pending CN112864024A (en) | 2021-01-08 | 2021-01-08 | Ceramic circuit board and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112864024A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113825321A (en) * | 2021-09-03 | 2021-12-21 | 深圳市顺华智显技术有限公司 | Circuit board and manufacturing method and application thereof |
| CN113937606A (en) * | 2021-10-14 | 2022-01-14 | 浙江水晶光电科技股份有限公司 | Circuit protection element and preparation method thereof |
| CN115448758A (en) * | 2022-09-16 | 2022-12-09 | 北京七星华创微电子有限责任公司 | LTCC substrate manufacturing method and LTCC substrate |
| TWI795012B (en) * | 2021-10-05 | 2023-03-01 | 艾姆勒科技股份有限公司 | Substrate structure having thick conductive layer and method for etching the same |
| CN115846885A (en) * | 2023-01-31 | 2023-03-28 | 东莞市湃泊科技有限公司 | Method and system for manufacturing graph by laser etching |
| CN117817137A (en) * | 2024-03-05 | 2024-04-05 | 四川富乐华半导体科技有限公司 | Manufacturing method of ceramic copper-clad carrier plate with customizable roughness |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709439A (en) * | 2012-05-08 | 2012-10-03 | 东莞市凯昶德电子科技股份有限公司 | LED (Light emitting diode) ceramic support and manufacturing method thereof |
| KR20140041349A (en) * | 2012-09-27 | 2014-04-04 | 이 아이 듀폰 디 네모아 앤드 캄파니 | Method of etch cutting glass substrate |
| CN106793529A (en) * | 2016-12-07 | 2017-05-31 | 江苏华功第三代半导体产业技术研究院有限公司 | The preparation method and ceramic packaging substrate of a kind of ceramic packaging substrate |
| CN106851994A (en) * | 2017-04-08 | 2017-06-13 | 吉安市满坤科技有限公司 | A kind of preparation method of high heat-conducting ceramic printed circuit board |
| GB201811180D0 (en) * | 2017-07-13 | 2018-08-29 | Dongguan China Advanced Ceramic Tech Co Ltd | Ceramic module for power semiconductor integrated packaging and preparation method thereof |
| CN108615717A (en) * | 2018-07-20 | 2018-10-02 | 井敏 | A kind of metallized ceramic substrate, method for preparing substrate and substrate and chip welding method |
| US20190076947A1 (en) * | 2017-09-13 | 2019-03-14 | Samsung Electronics Co., Ltd. | Dissimilar metal member and manufacturing method thereof |
-
2021
- 2021-01-08 CN CN202110026524.8A patent/CN112864024A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709439A (en) * | 2012-05-08 | 2012-10-03 | 东莞市凯昶德电子科技股份有限公司 | LED (Light emitting diode) ceramic support and manufacturing method thereof |
| KR20140041349A (en) * | 2012-09-27 | 2014-04-04 | 이 아이 듀폰 디 네모아 앤드 캄파니 | Method of etch cutting glass substrate |
| CN106793529A (en) * | 2016-12-07 | 2017-05-31 | 江苏华功第三代半导体产业技术研究院有限公司 | The preparation method and ceramic packaging substrate of a kind of ceramic packaging substrate |
| CN106851994A (en) * | 2017-04-08 | 2017-06-13 | 吉安市满坤科技有限公司 | A kind of preparation method of high heat-conducting ceramic printed circuit board |
| GB201811180D0 (en) * | 2017-07-13 | 2018-08-29 | Dongguan China Advanced Ceramic Tech Co Ltd | Ceramic module for power semiconductor integrated packaging and preparation method thereof |
| US20190076947A1 (en) * | 2017-09-13 | 2019-03-14 | Samsung Electronics Co., Ltd. | Dissimilar metal member and manufacturing method thereof |
| CN108615717A (en) * | 2018-07-20 | 2018-10-02 | 井敏 | A kind of metallized ceramic substrate, method for preparing substrate and substrate and chip welding method |
Non-Patent Citations (1)
| Title |
|---|
| 毕克允等: "《微电子技术（第2版）-信息化武器装备的精灵》", pages: 137 - 138 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113825321A (en) * | 2021-09-03 | 2021-12-21 | 深圳市顺华智显技术有限公司 | Circuit board and manufacturing method and application thereof |
| TWI795012B (en) * | 2021-10-05 | 2023-03-01 | 艾姆勒科技股份有限公司 | Substrate structure having thick conductive layer and method for etching the same |
| CN113937606A (en) * | 2021-10-14 | 2022-01-14 | 浙江水晶光电科技股份有限公司 | Circuit protection element and preparation method thereof |
| CN115448758A (en) * | 2022-09-16 | 2022-12-09 | 北京七星华创微电子有限责任公司 | LTCC substrate manufacturing method and LTCC substrate |
| CN115448758B (en) * | 2022-09-16 | 2023-08-29 | 北京七星华创微电子有限责任公司 | LTCC substrate manufacturing method and LTCC substrate |
| CN115846885A (en) * | 2023-01-31 | 2023-03-28 | 东莞市湃泊科技有限公司 | Method and system for manufacturing graph by laser etching |
| CN117817137A (en) * | 2024-03-05 | 2024-04-05 | 四川富乐华半导体科技有限公司 | Manufacturing method of ceramic copper-clad carrier plate with customizable roughness |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112864024A (en) | Ceramic circuit board and manufacturing method thereof | |
| CN107484356B (en) | Manufacturing method of thick copper sandwich aluminum substrate | |
| EP1435658B1 (en) | Substrates and method for producing the same | |
| US9504165B2 (en) | Method of forming conductive traces on insulated substrate | |
| CN104105353B (en) | A kind of manufacture method of high-precision ceramic circuit board | |
| TW201408153A (en) | Ceramic substrate and method for reducing surface roughness of metal filled via holes thereon | |
| US20110123931A1 (en) | High-precision ceramic substrate preparation process | |
| CN112788857A (en) | Circuit board fine circuit processing method | |
| CN109168265A (en) | A kind of high-frequency microwave plate high density interconnection board manufacturing method | |
| CN109275268A (en) | A kind of PCB back drill production method being less than 0.15mm for medium thickness | |
| CN103747636A (en) | Gold-plated circuit-board lead etch-back method | |
| CN113141712A (en) | Method for manufacturing double-sided aluminum substrate | |
| CN115279053A (en) | Processing method of aluminum nitride circuit board | |
| CN113613399A (en) | Circuit board manufacturing method and circuit board | |
| US20110123930A1 (en) | Ceramic substrate preparation process | |
| CN111988915A (en) | Manufacturing process of PCB resin plug hole | |
| CN102762037B (en) | A kind of ceramic circuit board and manufacture method thereof | |
| CN116477963B (en) | Method for producing ceramic copper-clad substrate with pins by using porous ceramic | |
| CN105208777A (en) | Manufacturing method for circuit board with metallization back drilled hole | |
| CN104125710B (en) | A kind of substrate and its manufacturing method based on anode oxidation technology | |
| CN112533399A (en) | PCB metallization half-hole manufacturing process | |
| RU2806799C1 (en) | Method for manufacturing microwave microstrip boards with metallized holes based on microwave dielectric substrates made of high-frequency ceramic materials with high dielectric constant | |
| CN112218437B (en) | Method for removing electroplating connection line of thin film circuit pattern | |
| CN113394120A (en) | Fan-out type packaging structure based on laser forming and preparation method thereof | |
| CN110324979A (en) | A kind of manufacture craft of the gold-plated printed wiring board of no conducting wire |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |