CN112838776B - Neutral point clamping type three-level busbar and topological structure based on XHP packaging device - Google Patents

Abstract

The invention provides a neutral point clamped three-level bus bar based on an XHP packaging device, which comprises: the first bus bar is of a symmetrical structure, and the mounting holes on the first bus bar are symmetrically distributed by taking the center line of the first bus bar as an axis and are used for connecting a first semiconductor module, a second semiconductor module and a supporting capacitor, wherein the first semiconductor module comprises a first clamping diode and a first outer tube, and the second semiconductor module comprises a second clamping diode and a second outer tube; the second busbar is of a triangular plane symmetrical structure, and the mounting holes are symmetrically distributed by taking the center line of the second busbar as an axis and are used for connecting a third semiconductor module with the first semiconductor module and the second semiconductor module, wherein the third semiconductor module comprises a first inner pipe and a second inner pipe. The invention adopts a double-bus structure, so that the current path is shortened as much as possible in the element, the bus structures are symmetrical, and magnetic fields generated when current flows on the bus can be mutually offset to achieve the purpose of reducing the impurity inductance.

Description

Neutral point clamping type three-level busbar and topological structure based on XHP packaging device

Technical Field

The invention relates to the field of converters, in particular to a neutral point clamped three-level busbar based on an XHP (XHP) packaging device and a topological structure.

Background

With the increasing demand of power class of converters, the withstand voltage and the current capability of semiconductor devices are also tested increasingly, wherein the insufficient current capability can be solved by connecting the devices in parallel, and the withstand voltage capability generally depends on the characteristics of the devices, until a three-level structure appears, so that the low-voltage class devices can be applied to the high-voltage field.

I type three level can realize using the semiconductor device of low-voltage grade in the high-pressure field because its structural feature, can guarantee simultaneously that output voltage change rate is less again, the sine is higher, the harmonic content is lower, consequently, three level structure has had extensive application in the converter field, but the semiconductor device of present three level structure mostly used Primepack, Econodeal encapsulation is as converter element, female arranging is mostly row as an organic whole, be not suitable for other packaging structure, and all include the absorption return circuit on the converter usually, make the overall structure of module more complicated.

Therefore, the invention provides a neutral point clamping type three-level bus bar based on an XHP packaging device and a topological structure.

Disclosure of Invention

In order to solve the above problems, the present invention provides a midpoint clamping type three-level bus bar based on an XHP package device, the bus bar comprising:

the first bus bar is of a symmetrical structure, and mounting holes in the first bus bar are symmetrically distributed by taking the center line of the first bus bar as an axis and are used for connecting a first semiconductor module, a second semiconductor module and a support capacitor, wherein the first semiconductor module comprises a first clamping diode and a first outer tube, and the second semiconductor module comprises a second clamping diode and a second outer tube;

the second is female arranges, and it is article font plane symmetrical structure, and mounting hole on it all uses the female central line that arranges of second is axisymmetric distribution for connect the third semiconductor module with first semiconductor module the third semiconductor module with the second semiconductor module, wherein, the third semiconductor module contains first inner tube and second inner tube.

According to one embodiment of the invention, the first busbar comprises a support capacitor mounting hole and a first part outer tube mounting hole, and the plane of the support capacitor mounting hole is perpendicular to the plane of the first part outer tube mounting hole.

According to an embodiment of the present invention, the supporting capacitor mounting holes include a first mounting hole, a second mounting hole, a third mounting hole and a fourth mounting hole for connecting the supporting capacitor.

According to an embodiment of the present invention, the first partial outer tube mounting holes include fifth to twelfth mounting holes, wherein the fifth to eighth mounting holes are used for connecting the first clamping diode and the first outer tube in the first semiconductor module, and the ninth to twelfth mounting holes are used for connecting the second clamping diode and the second outer tube in the second semiconductor module.

According to an embodiment of the present invention, the second busbar includes a second portion outer pipe mounting hole and an inner pipe mounting hole.

According to an embodiment of the present invention, the second partial outer tube mounting holes include thirteenth to eighteenth mounting holes, wherein the thirteenth to fifteenth mounting holes are used for connecting a junction of the first outer tube and the first clamping diode in the first semiconductor module, and the sixteenth to eighteenth mounting holes are used for connecting a junction of the second clamping diode and the second outer tube in the second semiconductor module.

According to an embodiment of the present invention, the inner pipe mounting hole includes a nineteenth mounting hole to the twenty-second mounting hole for connecting the third semiconductor module.

According to an embodiment of the present invention, the first busbar and the second busbar are both laminated busbars.

According to another aspect of the present invention, there is also provided an XHP package device-based midpoint clamping type three-level topology, including:

a heat sink having a heat-dissipating structure,

a semiconductor module fixed to the heat sink, including a first semiconductor module, a second semiconductor module, and a third semiconductor module;

an adapter board including a first adapter board used in correspondence with the first semiconductor module, a second adapter board used in correspondence with the second semiconductor module, and a third adapter board used in correspondence with the third semiconductor module;

a drive board fixed to a fixing plate above the semiconductor module, positioned on the adapter interface side, and including a first drive board used in correspondence with the first semiconductor module, a second drive board used in correspondence with the second semiconductor module, and a third drive board used in correspondence with the third semiconductor module;

The pulse plate is fixed on the fixing plate above the semiconductor module and positioned on the interface side of the driving plate, and the first driving plate, the second driving plate and the third driving plate are all driven by one pulse plate;

a busbar as claimed in any preceding claim.

According to one embodiment of the present invention, the semiconductor module employs an XHP-packaged device.

The XHP packaging device-based midpoint clamping type three-level bus bar and the topological structure adopt a double-bus bar structure, so that a current path is shortened as much as possible in an element, the bus bar structures are symmetrical, magnetic fields generated when current flows on the bus bar can be mutually offset to achieve the purpose of reducing the impurity sense, and meanwhile, an absorption loop is not required to be added, the bus bar is a copper bar, the structure is simple, the cost is low, and the installation and the maintenance are convenient; the invention has strong adaptability, realizes the three-level function, has low overvoltage, is convenient for parallel expansion, and can expand the busbar according to the requirement.

Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.

Drawings

The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:

FIG. 1 shows a topology of a midpoint clamping type three-level circuit;

FIG. 2 shows two three-level circuit configurations;

fig. 3 is a diagram illustrating a structure of a midpoint clamping type three-level bus bar of an XHP-based package device according to an embodiment of the present invention;

FIG. 4 is a diagram illustrating the effect of bus bar installation according to an embodiment of the present invention;

FIG. 5 shows a schematic diagram of a commutation circuit according to one embodiment of the invention; and

fig. 6 is a diagram illustrating a midpoint clamping type three-level topology of an XHP package-based device according to an embodiment of the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in further detail below with reference to the accompanying drawings.

The three-level structure has advantages such as increasing the operating voltage of the converter and reducing harmonics, but also has disadvantages such as higher overvoltage when the inner tube is turned off and more complicated control signal than the two levels. The problem of turn-off overvoltage can be reduced by the busbar design and the absorption loop.

In the prior art, compared with a traditional extension type connecting circuit, an integrated row is designed for a multi-parallel power module based on XHP packaging, so that the loop area of each loop is smaller, and the noise is reduced.

In addition, in the prior art, the busbar of the three-level busbar and the converter equipment is characterized in that the busbar is an integrated busbar, the first layer comprises a positive busbar and a negative busbar, and the alternating current output busbar and the second layer comprise a first connecting busbar and a second connecting busbar; the third layer includes a midpoint bus bar. The bus bar is characterized in that the bus bar is an integrated bar and is divided into a first bus bar layer and a second bus bar layer, wherein the first bus bar layer is a midpoint bus bar, the second bus bar layer comprises a positive bus bar, a negative bus bar, an inter-module connecting bar and an input-output bus bar, and the middle of the inter-module connecting bar and the middle of the input-output bus bar are insulated and isolated from each other.

The bus bars in the above two technical schemes are all of an integral structure, and are not suitable for XHP packaging of the semiconductor device with the main terminal and the auxiliary terminal basically located on the same horizontal plane, so that the wire outgoing difficulty of the device adapter plate is caused, and the signals of the adapter plate are weak current signals, and the bus bars are too close to each other to be easily interfered.

FIG. 1 shows a topology of a midpoint clamping type three-level circuit. As shown in fig. 1, C1 and C2 are support capacitors, and C1 and C2 are the same in size; dd1 and Dd2 are clamping diodes, S1 and S4 are outer tubes, and S2 and S3 are inner tubes.

As can be seen from fig. 1, when a semiconductor device is used as a base element, the three-level circuit shown in fig. 1 has 2 configurations (see fig. 2).

The first three-level circuit structure (left side diagram in fig. 2) is that the outer tube and the clamping diode are replaced by one semiconductor device, and the two inner tubes are replaced by one semiconductor device; the second three-level circuit structure (the right diagram in fig. 2) is to replace a pair of inner and outer transistors with a semiconductor device, and replace two clamping diodes with a semiconductor device, and these two different ideas will lead to the difference of circuit miscellaneous feelings, and the following discussion is made about the commutation loop formed by the two circuits:

firstly, when the output voltage and the output current are in the same direction, only the outer tube and the clamping diode (S1 and Dd1) participate in commutation, namely P → M1 → C, Loop1 for short; when the output voltage and current are reversed, S1, S2, S3 and Dd2 participate in commutation, i.e., P → M1 → AC → M2 → C, Loop2 for short.

Obviously, the longer the commutation Loop is, the larger the stray inductance is, so for Loop1, the path of the structure formed by using the first three levels is obviously shorter than that of the second structure, when the first structure is used, the Loop1 completes commutation in a single element completely, current flows in opposite directions, magnetic fields are mutually offset, and the stray inductance can be reduced to the maximum extent; in the Loop2, the bus bar needs to be designed in consideration of the current flow, so that the distance of the current flowing in opposite directions is as long as possible to reduce the stray inductance to the maximum extent.

Therefore, the bus bar structure proposed in the present application is based on the first three-level circuit structure (left diagram in fig. 2).

Fig. 3 is a diagram illustrating a structure of a midpoint clamping type three-level bus bar of an XHP-package-based device according to an embodiment of the present invention.

As shown in fig. 3, the first bus bar has a symmetrical structure, and the mounting holes thereon are all distributed symmetrically with the center line of the first bus bar as an axis, so as to ensure the same stray inductances on both sides, the first bus bar is connected to the first semiconductor module, the second semiconductor module and the support capacitor (as shown in the mounting effect diagram of fig. 4), wherein the first semiconductor module includes a first clamping diode Dd1 and a first outer tube S1, and the second semiconductor module includes a second clamping diode Dd2 and a second outer tube S4.

Further, the first busbar includes a support capacitor mounting hole 301 and a first partial outer tube mounting hole 302, and a plane where the support capacitor mounting hole is located is perpendicular to a plane where the first partial outer tube mounting hole is located. In one embodiment, the first busbar is a vertical structure, and the angle and the position of the plane where the support capacitor mounting hole is located and the plane where the first part outer tube mounting hole is located can be adjusted according to the relative position of the actual module capacitor and the element.

Specifically, the support capacitor mounting holes 301 include a first mounting hole, a second mounting hole, a third mounting hole, and a fourth mounting hole for connecting the support capacitor.

In addition, the first partial outer tube mounting holes 302 include fifth to twelfth mounting holes 3021 to connect the first clamp diode and the first outer tube in the first semiconductor module, and ninth to twelfth mounting holes 3022 to connect the second clamp diode and the second outer tube in the second semiconductor module.

As shown in fig. 3, the second bus bar has a planar symmetrical structure in a delta shape, and the mounting holes thereon are all distributed with the center line of the second bus bar as an axis, so as to ensure the two sides of the bus bar to have the same noise, the second bus bar is used for connecting the third semiconductor module and the first semiconductor module, and the third semiconductor module and the second semiconductor module (as shown in the mounting effect diagram of fig. 4), wherein the third semiconductor module includes a first inner tube S2 and a second inner tube S3.

Further, the second busbar includes a second partial outer tube mounting hole 303 and an inner tube mounting hole 304.

Specifically, the second partial outer tube mounting holes 303 include thirteenth to eighteenth mounting holes 3031 for connecting the junction of the first outer tube and the first clamping diode in the first semiconductor module, and sixteenth to eighteenth mounting holes 3032 for connecting the junction of the second clamping diode and the second outer tube in the second semiconductor module.

In addition, the inner pipe mounting holes 304 include nineteenth to twenty second mounting holes for connecting a third semiconductor module.

In one embodiment, the first busbar and the second busbar are laminated busbars.

In one embodiment, a certain height is reserved at the connecting position of the busbar and the device, so that the problem that the insulation distance between the auxiliary terminal and the busbar is not enough is solved.

As shown in fig. 3, the three-level bus bar of the midpoint clamping type based on the XHP package device may be applied to the XHP packaged semiconductor device, and the adopted double bus bar structure may shorten the current path inside the element as much as possible; in addition, as the bus bars are in a symmetrical structure, magnetic fields generated when current flows on the bus bars can be mutually offset so as to achieve the purpose of reducing the impurity inductance; in addition, an absorption loop does not need to be added, and the busbar is a copper bar, so that the structure is simple, the cost is low, and the installation and maintenance are convenient; moreover, the adaptability is strong, and overvoltage is low while the three-level function is realized; in addition, the parallel connection expansion is convenient, and the busbar can be expanded according to the style when needed; and, support the adjustment that electric capacity mounting hole can carry out different angles and position according to the model difference of supporting electric capacity, can adapt to multiple structure.

Fig. 5 shows a schematic diagram of a commutation circuit according to one embodiment of the invention. The present invention takes into consideration the problem of the current flow direction, and reduces the noise by making the current flow in the opposite direction in the element as much as possible. As shown in fig. 5, the Loop1 commutating path may realize commutation inside the semiconductor module, and the Loop2 commutating path may flow current in opposite directions, so that the paths are almost the same and some paths are inside the semiconductor module, thereby reducing the sense of discomfort to the maximum. Therefore, the overvoltage can be obviously reduced on the premise of not increasing an absorption loop.

Fig. 6 is a diagram illustrating a midpoint clamping type three-level topology of an XHP package-based device according to an embodiment of the present invention. As shown in fig. 6, the three-view of the topology includes the heat sink, the adapter board, the driving board, the pulse board, and the bus bar shown in fig. 3.

The semiconductor module is fixed on the radiator and comprises a first semiconductor module, a second semiconductor module and a third semiconductor module.

The adapter board includes a first adapter board used in correspondence with the first semiconductor module, a second adapter board used in correspondence with the second semiconductor module, and a third adapter board used in correspondence with the third semiconductor module.

The drive board is fixed to a fixing plate above the semiconductor module, is positioned on the adapter interface side, and includes a first drive board used in correspondence with the first semiconductor module, a second drive board used in correspondence with the second semiconductor module, and a third drive board used in correspondence with the third semiconductor module.

Specifically, the number of the driving plates may be changed according to actual conditions, and the present invention does not limit this. For example: FIG. 6 shows 2 drive plates to accommodate two-way driving; when single-pass driving is performed, 3 driving boards are required.

The pulse plate is fixed on the fixing plate above the semiconductor module and located on the side of the driving plate interface, and the first driving plate, the second driving plate and the third driving plate are all driven by the pulse plate.

Specifically, the semiconductor module employs XHP-packaged devices.

In conclusion, the neutral point clamping type three-level busbar and the topological structure based on the XHP packaging device provided by the invention adopt the double-busbar structure, so that a current path is shortened as much as possible in an element, the busbar structures are symmetrical, and magnetic fields generated when current flows on the busbar can be mutually offset to achieve the purpose of reducing the impurity inductance; the invention has strong adaptability, realizes the three-level function, has low overvoltage, is convenient for parallel expansion, and can expand the busbar according to the requirement.

It is to be understood that the disclosed embodiments of the invention are not limited to the particular structures, process steps, or materials disclosed herein but are extended to equivalents thereof as would be understood by those ordinarily skilled in the relevant arts. It is also to be understood that the terminology used herein is for the purpose of describing particular embodiments only, and is not intended to be limiting.

Reference in the specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. Thus, the appearances of the phrase "one embodiment" or "an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment.

Although the embodiments of the present invention have been described above, the above description is only for the convenience of understanding the present invention, and is not intended to limit the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (7)

1. A Neutral Point Clamped (NPC) type three-level bus bar based on an XHP package device, the bus bar comprising:

the first bus bar is of a symmetrical structure, mounting holes in the first bus bar are symmetrically distributed by taking the center line of the first bus bar as an axis and are used for connecting a first semiconductor module, a second semiconductor module and a supporting capacitor, wherein the first semiconductor module comprises a first clamping diode and a first outer tube, the second semiconductor module comprises a second clamping diode and a second outer tube, the first bus bar comprises mounting holes of the supporting capacitor and mounting holes of a first part of outer tubes, and the angle and the position of the plane of the mounting holes of the supporting capacitor and the plane of the mounting holes of the first part of outer tubes can be adjusted according to the relative position of the actual module capacitor and an element;

a second busbar which is in a delta-shaped plane symmetric structure, wherein mounting holes are symmetrically distributed by taking a central line of the second busbar as an axis and are used for connecting a third semiconductor module with the first semiconductor module and the third semiconductor module with the second semiconductor module, the third semiconductor module comprises a first inner tube and a second inner tube, the second busbar comprises a second part outer tube mounting hole and an inner tube mounting hole, the second part outer tube mounting hole comprises a thirteenth mounting hole to an eighteenth mounting hole, the thirteenth mounting hole to the fifteenth mounting hole are used for connecting a joint of the first outer tube and the first clamping diode in the first semiconductor module, and the sixteenth mounting hole to the eighteenth mounting hole are used for connecting a joint of the second clamping diode and the second outer tube in the second semiconductor module, the inner pipe mounting hole includes a nineteenth mounting hole to a twenty second mounting hole for connecting the third semiconductor module.

2. The busbar of claim 1, wherein the support capacitor mounting holes are in a plane perpendicular to a plane in which the first portion outer tube mounting holes are located.

3. The busbar according to claim 2, wherein the support capacitor mounting holes comprise a first mounting hole, a second mounting hole, a third mounting hole and a fourth mounting hole for connecting the support capacitor.

4. The busbar according to claim 2, wherein the first partial outer tube mounting holes include fifth to twelfth mounting holes, wherein the fifth to eighth mounting holes are used for connecting the first clamping diode and the first outer tube in the first semiconductor module, and the ninth to twelfth mounting holes are used for connecting the second clamping diode and the second outer tube in the second semiconductor module.

5. The busbar according to any of claims 1 to 4, wherein the first busbar and the second busbar are laminated busbars.

6. A XHP-package device-based midpoint clamping type three-level topology, comprising:

A heat sink having a heat-dissipating structure,

a semiconductor module fixed to the heat sink, including a first semiconductor module, a second semiconductor module, and a third semiconductor module;

an adapter board including a first adapter board used in correspondence with the first semiconductor module, a second adapter board used in correspondence with the second semiconductor module, and a third adapter board used in correspondence with the third semiconductor module;

a drive board fixed to a fixing plate above the semiconductor module, positioned on the adapter board interface side, and including a first drive board used in correspondence with the first semiconductor module, a second drive board used in correspondence with the second semiconductor module, and a third drive board used in correspondence with the third semiconductor module;

the pulse plate is fixed on the fixing plate above the semiconductor module and positioned on the interface side of the driving plate, and the first driving plate, the second driving plate and the third driving plate are all driven by one pulse plate;

the busbar of any of claims 1-5.

7. The topology of claim 6, wherein the semiconductor module employs XHP-packaged devices.

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