CN112805413A - Conductive material, molded article, and electronic component - Google Patents

Conductive material, molded article, and electronic component Download PDF

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Publication number
CN112805413A
CN112805413A CN201980064776.0A CN201980064776A CN112805413A CN 112805413 A CN112805413 A CN 112805413A CN 201980064776 A CN201980064776 A CN 201980064776A CN 112805413 A CN112805413 A CN 112805413A
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China
Prior art keywords
conductive material
plating
resin
plating layer
material according
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CN201980064776.0A
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CN112805413B (en
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佐佐木康则
川村高广
小林良聪
相场玲宏
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JX Nippon Mining and Metals Corp
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JX Nippon Mining and Metals Corp
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/615—Microstructure of the layers, e.g. mixed structure
    • C25D5/617—Crystalline layers
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/08—Ferrous alloys, e.g. steel alloys containing nickel
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34—Pretreatment of metallic surfaces to be electroplated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads

Abstract

The invention provides a conductive material which shows excellent resin adhesion even under severe environment. The conductive material is formed by resin on the surface or sealed by resin, the surface is composed of metal, and the following conditions (1) and (2) are satisfied: (1) the arithmetic average surface roughness height Sa is 0.25-0.4 μm; (2) the arithmetic mean curvature Spc of the peak apex is 3 to 6 ten thousand (1/mm).

Description

Conductive material, molded article, and electronic component
Technical Field
The present invention relates to a conductive material, a molded article, and an electronic component.
Background
In recent years, the desire for improvement in adhesion between metal and resin has increased. For example, in order to protect metal electronic components such as lead frames and bus bar modules from impact, temperature, humidity, and other factors, the surfaces of the electronic components may be subjected to resin molding, resin sealing, mold molding, or the like, which is performed by fixing the electronic components with resin. In such a case, the metal surface of the electronic component needs to be in close contact with the resin with excellent adhesion so that the resin does not peel off during use. In particular, for vehicle mounting, the electronization around an engine room under severe environment has been advanced, and therefore, further improvement of adhesion is required.
As a known technique for improving the adhesion between a metal and a resin, patent documents 1 to 3 propose a technique for roughening a plated surface of a lead frame in a resin-sealed semiconductor device in order to improve the adhesion between the lead frame and a mold resin.
Further, as a recently known technique, patent document 4 proposes a technique in which a specific surface area and an oxide film thickness of a surface layer are focused in order to improve adhesion between a metal and a resin.
Documents of the prior art
Patent document
Patent document 1: japanese laid-open patent publication No. 6-29439
Patent document 2: japanese laid-open patent publication No. 10-27873
Patent document 3: japanese laid-open patent publication No. 2006-93559
Patent document 4: international publication No. 2017/179447
Disclosure of Invention
Problems to be solved by the invention
Conventionally, in a high-temperature and high-humidity test, for example, JEDEC-LEVEL 1 is required, and in recent years, due to the electronization of automobiles, durability in a more severe environment, for example, a thermal cycle test, has been required, and it is found that the conventional techniques are not necessarily sufficient in characteristics.
The present invention has been made to solve the above-described problems, and provides a conductive material that exhibits excellent resin adhesion even under severe environments.
Means for solving the problems
As a result of intensive studies, the present inventors have found that a conductive material which can solve the above-mentioned problems can be obtained by forming the surface of a molding resin or a surface sealed with a resin of a metal and controlling the surface to a predetermined form.
The present invention, which has been completed based on the above-described findings, is, in one embodiment, an electrically conductive material in which a surface is formed with a resin or sealed with a resin, the surface being made of a metal, and the following conditions (1) and (2) are satisfied.
(1) The arithmetic average surface roughness height Sa is 0.25-0.4 μm;
(2) the arithmetic mean curvature Spc of the peak apex is 3 to 6 ten thousand (1/mm).
In another embodiment of the conductive material of the present invention, the maximum surface roughness height Sz of the surface is 3.5 to 6.5 μm.
In another embodiment of the conductive material of the present invention, the conductive material includes a base material and a plating layer formed on the base material, and the surface is the plating layer.
In another embodiment of the conductive material of the present invention, the base material is made of any one of copper, a copper alloy, aluminum, an aluminum alloy, iron, and an iron alloy.
In another embodiment of the conductive material of the present invention, the plating layer is formed of one or more kinds of plating layers.
In another embodiment of the conductive material according to the present invention, the plating layer has a first plating layer formed on the base material, and the first plating layer is made of any one of copper, a copper alloy, nickel, and a nickel alloy.
In another embodiment of the conductive material of the present invention, the plating layer has a second plating layer formed on the first plating layer, and the second plating layer is made of any one of palladium, a palladium alloy, gold, and a gold alloy.
In another embodiment of the conductive material of the present invention, the total thickness of the plating layers made of the one or more plating layers is 1 to 7 μm.
In another embodiment, the conductive material of the present invention partially has a surface satisfying the conditions (1) and (2).
In another embodiment, the present invention provides a molded article comprising the conductive material of the present invention molded with a resin on the surface or having the surface sealed with a resin.
In another embodiment, the present invention provides an electronic component including the conductive material of the present invention.
Effects of the invention
According to the present invention, a conductive material exhibiting excellent resin adhesion even under severe environments can be provided.
Drawings
Fig. 1 is a schematic cross-sectional view showing the structure of the conductive material according to embodiment 1.
Fig. 2 is a schematic cross-sectional view showing the structure of the conductive material according to embodiment 2.
Fig. 3 is a schematic cross-sectional view showing the structure of the conductive material according to embodiment 3.
Detailed Description
< conductive Material >
The conductive material according to the embodiment of the present invention is a conductive material in which a surface is molded with a resin or sealed with a resin, and the surface is made of a metal, and satisfies the following conditions (1) and (2).
(1) The arithmetic average surface roughness height Sa is 0.25-0.4 μm;
(2) the arithmetic mean curvature of the peak apex (arithmetric mean peak curvature) Spc is 3 to 6 million (1/mm).
Conventionally, the line roughness (Rz, Ra) of a metal has been controlled for the adhesion between the metal and a resin, but the control has not been sufficient as a parameter for controlling the adhesion between the resin and an electronic component used under a severer environment. On the other hand, details thereof will be described below, but in the present invention, as the surface roughness, the international standardization organization ISO 25178-2: 2012, the adhesion to the resin can be controlled more favorably than in the prior art.
Since the conductive material according to the embodiment of the present invention may be formed of at least a metal on the surface, the conductive material may be formed of one metal material or may be formed by separately forming a metal layer on the substrate and the surface, as described in detail below.
The surface of the conductive material according to the embodiment of the present invention has an arithmetic average surface roughness height Sa of 0.25 to 0.4 μm. If the Sa of the surface of the conductive material is less than 0.25 μm, the anchoring (anchor) effect is insufficient due to insufficient roughening of the surface, and the adhesion to the resin is reduced. If the Sa of the surface of the conductive material exceeds 0.4 μm, the tip portion of the roughened surface of the conductive material is easily broken. The Sa of the surface of the conductive material is preferably 0.27 to 0.38 μm, and more preferably 0.3 to 0.35 μm.
When the metal surface of the conductive material according to the embodiment of the present invention is bonded to the resin, the resin has a higher thermal expansion coefficient than the metal, and therefore, it is necessary to suppress the thermal expansion of the resin by metal anchoring. In the present invention, the arithmetic mean curvature Spc of the peak top of the surface of the conductive material is controlled to be 3 to 6 ten thousand (1/mm) in view of the difference in thermal expansion coefficient from the resin. Spc represents the inverse of the average of the principal curvatures of the peak apexes of the surface. That is, the sharper the peak becomes, the larger the Spc. If the arithmetic mean curvature Spc of the peak top of the surface of the conductive material is less than 3 ten thousand (1/mm), the anchor effect becomes insufficient, and the difference in thermal expansion coefficient is not overcome, and there is a possibility that peeling from the resin occurs. If the Spc on the surface of the conductive material is too large, the tip may be too sharp and easily broken, and the adhesion strength may be rather lowered. From such a viewpoint, the Spc on the surface of the conductive material is not particularly limited to the upper limit in order to exert an effect in combination with the Sa, but is preferably 6 ten thousand (1/mm) or less. The Spc of the surface of the conductive material is preferably 3.4 to 5.5 ten thousand (1/mm), and more preferably 4 to 5.5 ten thousand (1/mm).
The maximum surface roughness height Sz (ISO 25178-2: 2012) of the surface of the conductive material according to the embodiment of the present invention is preferably 3.5 to 6.5 μm. If the Sz of the surface of the conductive material is less than 3.5 μm, the anchor effect is insufficient due to insufficient roughening of the surface, and the adhesion to the resin is reduced. If the Sz of the surface of the conductive material exceeds 6.5 μm, the resin may not easily enter the gaps between the levels of the surface of the conductive material. The Sa of the surface of the conductive material is preferably 3.7 to 6.0 μm, and more preferably 4.5 to 5.0 μm.
The conductive material according to the embodiment of the present invention is not particularly limited as long as the surface is at least metal, but includes the following three modes (embodiments 1 to 3).
Embodiment 1 related to the configuration of the conductive material
Fig. 1 is a schematic cross-sectional view showing the structure of a conductive material 10 according to embodiment 1 of the present invention. The conductive material 10 has a surface 11 made of a metal material and satisfying the above conditions (1) and (2). On the right hand side an enlarged view of the dashed box 12 part of fig. 1 is shown. The right drawing of fig. 1 is a drawing showing an example of the roughened surface of the conductive material 10, and is not limited to such a roughened surface. With this configuration, since the material constituting the conductive material is a metal material, the manufacturing efficiency and the manufacturing cost are improved. The metal material of the conductive material 10 may be made of any one of copper, a copper alloy, aluminum, an aluminum alloy, iron, an iron alloy, nickel, a nickel alloy, palladium, a palladium alloy, gold, and a gold alloy, for example. In addition, in the metal and the resin, the thermal expansion coefficient of the resin is large. In this case, if the thermal conductivity of the metal (the metal material of the conductive material 10) that is in close contact with the resin is high, the heat charged in the resin can be efficiently released. As a result, thermal expansion of the resin can be suppressed. From such a viewpoint, the electrical conductivity proportional to the thermal conductivity of the metal material of the electrically conductive material 10 is preferably 10% IACS or more.
The conductive material 10 can be formed into a surface 11 satisfying the conditions (1) and (2) by preparing a predetermined metal material and subjecting the surface of the metal material to etching treatment, blasting treatment, or transfer treatment using a rolling roll having an uneven surface. As the etching treatment, for example, CZ8101 (product name) manufactured by MEC corporation, CPE900 (product name) manufactured by mitsubishi gas chemical corporation, NR1870 (product name) manufactured by MEC corporation, and the like, which are commercially available from each company, can be used to control the etching solution into a predetermined shape. As the etching method, various methods such as a dipping method, a spraying method, and an electrolytic method can be used.
Embodiment 2 related to the structure of the conductive material
Fig. 2 is a schematic cross-sectional view showing the structure of the conductive material 20 according to embodiment 2 of the present invention. The conductive material 20 includes a base 22 and a plating layer 23 formed on the base 22, and the surface 21 satisfying the conditions (1) and (2) is the plating layer 23. On the right hand side an enlarged view of the dashed box 24 part of fig. 2 is shown. The right drawing of fig. 2 is a drawing showing an example of the roughened surface of the conductive material 20, and is not limited to such a roughened surface. According to such a configuration, the surface satisfying the conditions (1) and (2) can be controlled by the plating layer, and the thickness of the surface (surface layer, i.e., plating layer) can be easily controlled.
The base material 22 may be made of resin, or may be made of any metal of copper, copper alloy, aluminum alloy, iron, and iron alloy. The base material 22 may be made of the same kind of metal as that of the plating layer 23. The plating layer 23 may be made of any one of copper, a copper alloy, nickel, and a nickel alloy. Further, if the metal (the base material 22 of the conductive material 20) indirectly adhered to the resin has a high thermal conductivity, heat charged in the resin can be efficiently released. As a result, thermal expansion of the resin can be suppressed. From such a viewpoint, the electrical conductivity proportional to the thermal conductivity of the base material 22 of the electrically conductive material 20 is preferably 10% IACS or more.
The conductive material 20 is prepared by preparing a base material 22 made of a predetermined material, and forming a plating layer 23 on the base material 22 under predetermined plating conditions. In this case, by controlling the plating conditions such as the composition of the plating bath (plating bath), the plating temperature, the current density, and the plating thickness, the surface 21 satisfying the above conditions (1) and (2) can be formed.
Embodiment 3 related to the structure of the conductive material
Fig. 3 is a schematic cross-sectional view showing the structure of the conductive material 30 according to embodiment 3 of the present invention. The conductive material 30 is composed of a base 32 and two kinds of plating layers (a first plating layer 33 and a second plating layer 34). The first plating layer 33 is formed on the base 32, the second plating layer 34 is formed on the first plating layer 33, and the surface 31 satisfying the conditions (1) and (2) is the second plating layer 34. The right drawing shows an enlarged view of the dashed box 35 portion of fig. 3. The right drawing of fig. 3 is a drawing showing an example of the roughened surface of the conductive material 30, and is not limited to such a roughened surface. According to such a configuration, the surface satisfying the conditions (1) and (2) can be controlled by the plating layer, and the thickness of the surface (surface layer, i.e., plating layer) can be easily controlled. Furthermore, a multi-layer coating can be produced at good cost and efficiency.
The base 32 may be made of resin, or may be made of any metal of copper, copper alloy, aluminum alloy, iron, and iron alloy. The base material 32 may be made of the same kind of metal as that of the first plating layer 33. The first plating layer 33 may be made of any one of copper, a copper alloy, nickel, and a nickel alloy. The second plating layer may be made of any one of palladium, a palladium alloy, gold, and a gold alloy. When the conductive material 30 is, for example, a lead frame, the surface of the second plating layer (the outermost surface of the conductive material 30) is plated with a noble metal in this way, whereby weldability can be improved and low contact resistance can be achieved. Further, if the metal (the base 32 of the conductive material 30) indirectly adhered to the resin has a high thermal conductivity, heat charged in the resin can be efficiently released. As a result, thermal expansion of the resin can be suppressed. From such a viewpoint, the electrical conductivity proportional to the thermal conductivity of the base material 32 of the electrically conductive material 30 is preferably 10% IACS or more.
The conductive material 30 is prepared by preparing a base 32 made of a predetermined material, forming a first plating layer 33 on the base 32 under predetermined plating conditions, and then forming a second plating layer 34. In this case, by controlling the plating conditions such as the composition of the plating bath, the plating temperature, the current density, and the plating thickness, the surface 31 satisfying the conditions (1) and (2) can be formed. For example, the first plating layer 33 satisfying the conditions (1) and (2) is formed by controlling the plating conditions such as the composition of the plating bath, the plating temperature, the current density, and the plating thickness, and the second plating layer 34 is formed thinly on such first plating layer 33. Thereby, the surface profile of the second plating layer 34 becomes substantially identical to the surface profile of the first plating layer 33. In this manner, the surface 31 satisfying the conditions (1) and (2) can also be formed.
The plating layer may be formed of one layer or two layers as in embodiment 2 or 3, or may be formed of three or four or more layers. Further, as long as the outermost surfaces of the conductive materials 10, 20, and 30 according to embodiments 1 to 3 satisfy the conditions (1) and (2), the outermost surfaces may be treated with a phosphate-based treatment liquid or the like to provide a function related to an antioxidant for plating. Further, if necessary, a sealing treatment for suppressing corrosion due to pinholes in plating may be provided.
In the conductive material according to the embodiment of the present invention, the total thickness of the plating layers made of one or more kinds of plating layers is preferably 1 to 7 μm. If the total thickness of the plating layers is less than 1 μm, the roughened shape of the surface cannot be sufficiently formed, and there is a fear that diffusion of the base material component may be easily performed. If the total thickness of the plating layers exceeds 7 μm, cracks may easily occur in the plating layer of the conductive material during press working or bending working.
The conductive material according to the embodiment of the present invention may partially have a surface satisfying the conditions (1) and (2) described above. When the conditions (1) and (2) are satisfied for the entire surface of the conductive material, the resin can be easily removed from a portion where adhesion of the resin is not necessary by providing the surface partially. As an example, by partially providing the surface, the resin (flash) leaking from the target site can be easily removed. Further, since the surface having a roughened shape satisfying the conditions (1) and (2) has a characteristic of deteriorating wire bondability, deterioration of wire bondability can be suppressed by providing the surface partially. The partially provided surface may be stripe-shaped, dot-shaped, annular, or the like.
< use of conductive Material >
The conductive material according to the embodiment of the present invention is not particularly limited in its application, and can be used as a material for electronic components that require good adhesion to a resin, and in particular, can be used as a material for electronic components that are subjected to resin molding, resin sealing, mold molding, or the like in which a surface is fixed with a resin so as to be protected from factors such as impact, temperature, humidity, and the like. Examples of the electronic component include: metal electronic components such as lead frames and bus bar modules. The conductive material according to the embodiment of the present invention is a molded article obtained by performing resin molding, resin sealing, or mold molding on such a surface, and therefore, the surface of the conductive material has very good adhesion to the resin, and therefore, even when used as a material for an electronic component used in a severe environment around an engine room mounted on a vehicle, for example, good durability can be expected.
Examples of the present invention and comparative examples are shown below together, which are provided for better understanding of the present invention and are not intended to limit the present invention.
< production of conductive Material >
As shown in Table 1, surface layer plating was formed on the surface of the substrate in examples 1 to 14 and 17 to 21, conventional example 1, and comparative examples 1 to 2. In examples 15 to 16 and conventional example 2, as shown in table 1, the primer plating and the surface plating were formed on the surface of the base material to prepare test pieces of the conductive material. The area of each substrate was 50mm × 50mm, and the plate thickness was 0.4 mm. The types of the base materials shown in table 1 are as follows.
C11000：99.9％Cu
C10200：99.9％Cu
C19400：Cu－2.2％Fe－0.15％Zn－0.03％P
C70250：Cu－3％Ni－0.65％Si－0.15％Mg
A5052：Al－2.5％Mg－0.4％Fe－0.25％Si－0.25％Cr－0.1％Cu－0.1％Mn－0.1％Zn
42 alloy: fe-42% Ni
As pretreatment conditions before each plating, substrates other than A5052 were subjected to 5A/dm in an alkali degreasing bath with 50g/L sodium hydroxide2After the cathodic electrolytic degreasing was performed for 60 seconds, acid cleaning was performed for 30 seconds in a 10% sulfuric acid and ammonium fluoride 50g/L acid cleaning solution, and the process was transferred to each plating step.
Furthermore, for A5052, the alkali degreasing bath was used at a concentration of 5A/dm2After conducting cathodic electrolytic degreasing for 10 seconds, acid cleaning was conducted for 10 seconds in an acid cleaning solution containing 10% sulfuric acid and 50g/L ammonium fluoride, and then zinc substitution was conducted in a zinc substitution bath containing 50g/L sodium hydroxide, 5g/L zinc oxide, 2g/L ferric chloride, and 50g/L Rochelle salt (Rochelle salt) at a bath temperature of 25 ℃ for 10 seconds, and the above-mentioned acid cleaning and zinc substitution were repeated again, and then the process was transferred to each plating step.
Each plating treatment is performed by adjusting the composition of the plating bath, the temperature of the plating solution, the current density, and the plating time in the electroplating. The plating conditions used in examples 1 to 5 are shown in Table 2. The plating bath components are 130g/L of Ni metal component, 25g/L of boric acid and pH3.3. Here, the Ni metal component is composed of nickel sulfamate tetrahydrate as a Ni salt and nickel chloride. More specifically, nickel sulfamate tetrahydrate: ni (NH)2SO3)2·4H2294g/L (about 300g/L) O, 53.5g/L in terms of Ni, nickel chloride hexahydrate: NiCl2·6H2O-about 310g/L, 76.5g/L in terms of Ni.
Examples 6 to 14 and 17 to 20, and conventional example 1 and comparative examples 1 to 2, and examples 15 to 16 were formed by performing surface plating and surface plating under the plating conditions used in table 2 in examples 1 to 5, and adjusting the composition of the plating bath, the temperature of the plating solution, the current density, the plating time, and the degree of stirring, respectively. In this case, the plating conditions used in table 2 of examples 1 to 5 and the evaluation results described below were referred to so that Sa, Spc, and Sz on the surface of the test piece of the conductive material were set to desired values. The adjustment of each plating condition is performed based on the following findings.
Film thickness: when the film thickness is increased, the grains grow preferentially in the film thickness direction (the growth rate in the film thickness direction is higher than that in the horizontal direction), and therefore, Sa and Sz become large. On the other hand, Spc becomes large because the orientation becomes strong due to the growth of crystal grains and the tip becomes sharp.
Kinds of plating solutions: when the concentration of chlorine element, that is, the concentration of nickel chloride in the plating solution is increased, the crystal is easily sharpened, and the unevenness on the surface is large and sharp, so that Sa, Sz, and Spc are increased.
Plating solution temperature: when the bath temperature is high, crystals grow isotropically, crystal grains tend to grow large, and the tips tend to be sharp, so that Sa, Sz, and Spc increase. On the other hand, when the bath temperature exceeds 60 ℃, the crystal grains are coarsened and become maximum at around 55 ℃ and then decrease.
Current density: when the current density is high, the number of nuclei generated increases, and therefore, the film thickness is considered to be thin or thick. There is a difference of about 3 μm, and if the film thickness is 3 μm or less, when the current density is high, Sa and Sz tend to be smaller by preferential fine deposition, and the number of projections is large, but the curvature tends to be smaller (that is, Spc tends to be larger) because the fine deposition progresses. On the other hand, when the film thickness is thick, Sa and Sz increase by the same reason as the above-described increase in film thickness, and Spc tends to increase in size because the orientation becomes strong and the tip becomes sharp due to the growth of crystal grains.
In conventional example 2, a test piece of a conductive material was produced under the following conditions based on the example of patent document 3. Specifically, the Ni plating of conventional example 2 was performed at a bath temperature of 50 ℃ and a current density of 5A/dm, with nickel sulfate 260g/L, nickel chloride 50g/L, boric acid 35g/L, pH4.5, and nickel chloride 50g/L2And plating time 200 seconds.
The Au plating described in examples 15 and 16 and conventional example 2 was performed at a bath temperature of 60 ℃ and a current density of 1A/dm in a manner of 20g/L of gold potassium cyanide, 50g/L, pH5 of potassium citrate, and 20g/L of gold potassium cyanide2The plating time was adjusted to a predetermined film thickness, and in Pd plating, 20g/L of palladium dichlorodiammine as a Pd component, 75g/L, pH9 of ammonium chloride, a bath temperature of 40 ℃ and a current density of 1.5A/dm were added2The plating time is adjusted to a predetermined film thickness. The plating thickness of conventional example 2 was set to 1 μm.
For the confirmation of the plating thickness, the average value of the thickness of each film at a collimator diameter of 0.2mm for 30 seconds was calculated for any 5 spots using a fluorescent X-ray film thickness meter (SFT 9500 manufactured by hitachi High-Tech).
In example 21, Ni plating of 6 μm was performed under the same conditions as in example 1, and then etching was performed under the following conditions until the Ni plating thickness became 5 μm.
Etching conditions
Etching solution: NR1870 manufactured by MEC corporation, etching solution temperature: 25 ℃, etching time: for 30 seconds.
< evaluation >
Sa, Spc, Sz of the surface
The Sa, Spc and Sz on the surface of the test piece of the conductive material were observed at 1000-fold magnification and spot diameter using a laser microscope (VK-X150) manufactured by Keynes
Figure BDA0003001182500000101
The measurement was carried out with a measurement area of 100. mu. m.times.100. mu.m. The average of 5 measurements (N5) was calculated as the values of Sa, Spc, and Sz on the surface of the test piece of the conductive material.
Shear Strength (initial)
The shear strength was measured by a pudding cup (プリンカップ) mold test using a conductive material obtained by resin molding on the surface of a test piece of the conductive material as a sample. The test conditions were set as follows: resin: GE-7470 LA resin available from Hitachi chemical Co., Ltd; area of the bottom surface of the pudding cup: 10mm2(ii) a Resin molding time: 120 seconds; mold Cure (Mold Cure): 8 hours at 175 ℃; the average of 10 shear force measurements (N10) was calculated as the shear strength (initial). The shear was measured at a shear rate of 100 μm/sec by using a bond tester (Series 4000) manufactured by DAGE. The evaluation criteria are as follows.
Very good: over 20kg
Good: 15kg or more and less than 20kg
X: less than 15kg
Shear strength (high temperature and humidity test)
The shear strength was measured in the same manner as above after the samples prepared as described above were left to stand at 85 ℃ and 85% humidity for 168 hours. The evaluation criteria are as follows.
Very good: without peeling
Good: the stripping rate is less than 20 percent
X: the peeling rate is more than 20%
The peeling rate was evaluated by calculating, from the ultrasonic flaw detection image, whether or not the surface of the conductive material and the resin were peeled at what ratio.
Shear strength (thermal cycle test)
The sample prepared as described above was kept at 125 ℃ for 30 minutes, and then kept at-40 ℃ for 30 minutes as one cycle, and this was continuously repeated for 500 cycles. Thereafter, the shear strength was measured in the same manner as above. The evaluation criteria are as follows.
Very good: without peeling
Good: the stripping rate is less than 10 percent
And (delta): the peeling rate is more than 10% and less than 20%
X: the peeling rate is more than 20%
The peeling rate was evaluated by calculating, from the ultrasonic flaw detection image, whether or not the surface of the conductive material and the resin were peeled at what ratio.
The test conditions and the evaluation results are shown in tables 1 and 2.
[ Table 1]
Figure BDA0003001182500000121
[ Table 2]
Figure BDA0003001182500000131
Therefore, the following steps are carried out: the surface of any of the conductive materials of examples 1 to 21 satisfied the following conditions (1) and (2), and therefore, the shear strength in both the initial and high-temperature and high-humidity tests was very good, and the evaluation criteria were any of Δ, fair, and excellent in the shear strength in the heat cycle test, and excellent in resin adhesion was exhibited even in a severe environment.
(1) The arithmetic average surface roughness height Sa is 0.25 to 0.4 μm,
(2) the arithmetic mean curvature Spc of the peak apex is 3-6 ten thousand (1/mm)
In conventional examples 1 and 2 and comparative examples 1 and 2, the surface of any of the conductive materials does not satisfy at least one of the conditions (1) and (2), and therefore at least the shear strength in the thermal cycle test is poor.
Description of the reference numerals
10. 20, 30: a conductive material; 11. 21, 31: a surface; 12. 24, 35: a dashed frame; 22. 32: a substrate; 23: plating; 33: a first plating layer; 34: and (5) second plating.

Claims (11)

1. A conductive material having a surface molded with a resin or having a surface sealed with a resin,
the surface is composed of a metal, and satisfies the following conditions (1) and (2):
(1) the arithmetic average surface roughness height Sa is 0.25-0.4 μm;
(2) the arithmetic mean curvature Spc of the peak apex is 3 to 6 ten thousand in units: 1/mm.
2. The conductive material according to claim 1,
the maximum surface roughness height Sz of the surface is 3.5 to 6.5 μm.
3. The conductive material according to claim 1 or 2,
the conductive material includes a base material and a plating layer formed on the base material,
the surface is the plating.
4. The conductive material according to claim 3,
the base material is composed of any one of copper, a copper alloy, aluminum, an aluminum alloy, iron, and an iron alloy.
5. The conductive material according to claim 3 or 4,
the coating is composed of more than one coating.
6. The conductive material according to claim 5,
the plating layer has a first plating layer formed on the base material, and the first plating layer is made of any one of copper, a copper alloy, nickel, and a nickel alloy.
7. The conductive material according to claim 6,
the plating layer has a second plating layer formed on the first plating layer, and the second plating layer is made of any one of palladium, a palladium alloy, gold, and a gold alloy.
8. The conductive material according to any one of claims 5 to 7,
the sum of the thicknesses of the plating layers formed by the one or more plating layers is 1 to 7 μm.
9. The conductive material according to any one of claims 1 to 8,
partially has a surface satisfying the conditions (1) and (2).
10. A molded article comprising the conductive material according to any one of claims 1 to 9, wherein a resin is molded on the surface or the surface is sealed with a resin.
11. An electronic component comprising the conductive material according to any one of claims 1 to 9.
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