CN112786500A - 晶圆架及具有晶圆架的垂直晶舟 - Google Patents

晶圆架及具有晶圆架的垂直晶舟 Download PDF

Info

Publication number
CN112786500A
CN112786500A CN201911097103.3A CN201911097103A CN112786500A CN 112786500 A CN112786500 A CN 112786500A CN 201911097103 A CN201911097103 A CN 201911097103A CN 112786500 A CN112786500 A CN 112786500A
Authority
CN
China
Prior art keywords
wafer
vertical
protrusion
support
contact end
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201911097103.3A
Other languages
English (en)
Inventor
李殷廷
金成基
郭世根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xia Tai Xin Semiconductor Qing Dao Ltd
Original Assignee
Xia Tai Xin Semiconductor Qing Dao Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xia Tai Xin Semiconductor Qing Dao Ltd filed Critical Xia Tai Xin Semiconductor Qing Dao Ltd
Priority to CN201911097103.3A priority Critical patent/CN112786500A/zh
Priority to US16/788,082 priority patent/US11574829B2/en
Publication of CN112786500A publication Critical patent/CN112786500A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6732—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本发明提供了一种用于扩散制程的垂直晶舟。所述垂直晶舟包括多个晶圆架。每一晶圆架包括垂直支持构件以及多个晶圆支持臂。所述多个晶圆支持臂延伸自所述垂直支持构件的侧壁。每一晶圆支持臂包括支持本体与突出部。所述支持本体在所述垂直支持构件与所述突出部之间。所述支持本体与所述突出部的中心水平对齐。所述突出部的垂直长度小于所述支持本体的垂直长度。

Description

晶圆架及具有晶圆架的垂直晶舟
技术领域
本发明涉及一种半导体晶圆载具，尤其涉及一种垂直晶舟。
背景技术
为了执行薄膜形成制程，晶圆被装进垂直晶舟。接续地，垂直晶舟被垂直地放入扩散装置中，例如低压化学气相沈积(LPCVD)装置，以执行化学反应。垂直晶舟具有用于承载晶圆的槽。扩散装置中的粒子或化学物可能对所述槽造成腐蚀。此外，更换晶舟会增加薄膜形成制程的成本。
发明内容
有鉴于此，有必要提供一种耐用的晶圆架。
另，还有必要提供一种具有所述晶圆架的垂直晶舟。
本发明提供一种用于承载多个晶圆的晶圆架，包括：垂直支持构件；以及多个晶圆支持臂，其延伸自所述垂直支持构件的侧壁，每一晶圆支持臂包括支持本体与突出部，其特征在于，所述支持本体在所述垂直支持构件与所述突出部之间，所述支持本体与所述突出部的中心水平对齐，以及所述突出部的垂直长度小于所述支持本体的垂直长度。
在本发明一些实施方式中，所述垂直支持构件的所述侧壁与所述多个晶圆支持臂形成多个沟槽。
在本发明一些实施方式中，所述支持本体的上端部分具有上部未接触端与上部侧端，所述支持本体的下端部分具有下部未接触端与下部侧端，以及所述上部未接触端与所述下部未接触端相互平行。
在本发明一些实施方式中，所述支持本体的所述上部侧端及所述下部侧端与所述垂直支持构件的所述侧壁相互垂直。
在本发明一些实施方式中，所述突出部具有第一接触端、第二接触端以及顶端，所述第一接触端与所述第二接触端在所述突出部的相对侧。
在本发明一些实施方式中，所述支持本体的所述上部侧端与所述突出部的所述第一接触端互相垂直，所述支持本体的所述下部侧端与所述突出部的所述第二接触端互相垂直。
在本发明一些实施方式中，所述第一接触端以及所述第二接触端的至少其中之一被配置以支持所述多个晶圆中的其中之一
本发明还提供一种用于扩散制程的垂直晶舟，包括：多个上述晶圆架。
在本发明一些实施方式中，所述垂直晶舟被配置以垂直放入垂直反应器。
在本发明一些实施方式中，所述垂直晶舟进一步包括：顶板块；以及底板块，其特征在于，所述多个晶圆架被配置以连接所述顶板块与所述底板块。
相较于现有技术，本发明提供的晶圆架可被上下颠倒配置，具有所述晶圆架的垂直晶舟可翻转使用。如此，可以延长垂直晶舟的使用寿命、降低因更换晶舟造成的停机时间以及提高晶圆制备良率。
附图说明
图1为本发明实施方式提供垂直晶舟的透视示意图。
图2为图1中所示的垂直晶舟的其中一晶圆架的一部份的透视示意图。
图3为图1中所示的垂直晶舟的其中一晶圆架的一部份的截面示意图。
图4为本发明实施方式提供装载晶圆的晶圆架的截面示意图。
图5为本发明实施方式提供装载晶圆的反置晶圆架的截面示意图。
主要元件符号说明
垂直晶舟 10
第一板块 11
第二板块 12
晶圆架 100
部份 101
垂直支持构件 210
晶圆支持臂 220
沟槽 230
侧壁 251
非接触端 261
侧端 262
接触端 271
虚线 280
虚线 281
垂直支持构件 310
晶圆支持臂 320
支持本体 320a
突出部 320b
沟槽 330
侧壁 351
第一非接触端 361
上部侧端 362
第二非接触端 363
下部侧端 364
第一接触端 371
第二接触端 372
晶圆 440
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
下面将结合具体实施例及附图对本发明的技术方案进行清楚、完整地描述。显然，所描述的实施方式仅是本发明一部分实施方式，而不是全部的实施方式。基于本发明中的实施方式，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施方式，都属于本发明保护的范围。除非另有定义，本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本发明。
在本发明的实施方式的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明的实施方式和简化描述，而不是指示或暗示所指的装置或组件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的实施方式的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的实施方式的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
图1是根据本揭示实施例的垂直晶舟10的透视图。所述垂直晶舟10包括第一板块11(或顶板块)、多个晶圆架100以及第二板块12(或底板块)。所述多个晶圆架100被配置以连接所述第一板块11与所述第二板块12。在某些例子中，所述垂直晶舟10装载晶圆且被垂直放入扩散炉(未显示)。
图2是所述垂直晶舟10中的其中一晶圆架100的一部份101的透视图。所述晶圆架100包括垂直支持构件210以及多个晶圆支持臂220。所述垂直支持构件210可为长方柱。所述多个晶圆支持臂220是从所述垂直支持构件210的侧壁251所延伸的突出件。所述垂直支持构件210的侧壁251与所述多个晶圆支持臂220形成多个沟槽230。换句话说，所述沟槽230是所述多个晶圆支持臂220间的间隙。
在某些实施例中，所述多个晶圆支持臂220包括非接触端261、侧端262、接触端271。所述接触端271被配置以支持所述晶圆的一部份。例如，所述晶圆的边缘的一部份可被放置于所述接触端271上，且离所述侧端262一预定长度L1。
图3是所述垂直晶舟10中的其中一晶圆架100的一部份的截面图。所述晶圆架100包括垂直支持构件310、多个晶圆支持臂320以及多个沟槽330。
在某些实施例中，所述晶圆支持臂320包括支持本体320a以及突出部320b。所述支持本体320a以及所述突出部320b形成阶梯状结构。所述垂直支持构件310的侧壁351对应至图2中的所述侧壁251。所述支持本体320a具有上端部分与下端部分。所述上端部分包括朝向上方的第一非接触端361(或上部非接触端)以及上部侧端362。所述突出部320b具有朝向上方的第一接触端371以及朝向下方的第二接触端372。所述第一接触端371与所述第二接触端372在所述突出部320b的相对侧。所述侧壁351以及所述第一非接触端361相互垂直，即二者间形成的夹角α1为90度。所述上部侧端362以及所述第一接触端371相互垂直，即二者间形成的夹角α2为90度。
对称于所述上端部分，所述支持本体320a的下端部分包括朝向下方的第二非接触端363(或下部非接触端)以及下部侧端364。所述侧壁351以及所述第二非接触端363相互垂直，即二者间形成的夹角α3为90度。所述下部侧端364以及所述第二接触端372相互垂直，即二者间形成的夹角α4为90度。在某些例子中，所述上部非接触端361与所述下部非接触端363相互平行。
请参见图2与图3。如图2所示，当从箭头DIR1所示的方向观看时，所述突出部的截面积(沿着虚线281所示之面)小于所述支持本体320a的截面积(沿着虚线280所示之面)。如图3所示，所述支持本体320a位于所述垂直支持构件210/310与突出部320b之间。所述支持本体与所述突出部的中心水平对齐。所述突出部的垂直长度VL1小于所述支持本体的垂直长度VL2。
图4是根据本揭示实施例的装载晶圆440的晶圆架100的截面图。藉由让所述晶圆440的边缘的底部与所述第一接触端371接触，所述晶圆440可被放置在所述突出部320b上。
图5是根据本揭示实施例的装载晶圆440的反置晶圆架100的截面图。在某些例子中，所述第一接触端以及所述第二接触端的至少其中之一被配置以支持所述多个晶圆的其中之一。因此，当所述晶圆架100的所述第一接触端371有损伤时，所述晶圆架可被上下颠倒配置，以让所述第二接触端372可被使用。如图5所示，当损伤时，所述第一接触端371显现不平整表面510，其可能导致扩散制程后的晶圆的良率降低。因为晶圆支撑臂320是水平对称的，在装载晶圆前反转所述晶圆架100可将所述第一接触端371换成所述第二接触端372。因此，所述晶圆440可被放置在所述第二接触端372上。
可以理解的是，以上实施例仅用来说明本发明，并非用作对本发明的限定。对于本领域的普通技术人员来说，根据本发明的技术构思做出的其它各种相应的改变与变形，都落在本发明权利要求的保护范围之内。

Claims (10)

1.一种用于承载多个晶圆的晶圆架，其特征在于，所述晶圆架包括：
垂直支持构件；以及
多个晶圆支持臂，其延伸自所述垂直支持构件的侧壁，每一晶圆支持臂包括支持本体与突出部，其特征在于，所述支持本体在所述垂直支持构件与所述突出部之间，所述支持本体与所述突出部的中心水平对齐，以及所述突出部的垂直长度小于所述支持本体的垂直长度。
2.如权利要求1所述的晶圆架，其特征在于，所述垂直支持构件的所述侧壁与所述多个晶圆支持臂形成多个沟槽。
3.如权利要求2所述的晶圆架，其特征在于，所述支持本体的上端部分具有上部未接触端与上部侧端，所述支持本体的下端部分具有下部未接触端与下部侧端，以及所述上部未接触端与所述下部未接触端相互平行。
4.如权利要求3所述的晶圆架，其特征在于，所述支持本体的所述上部侧端及所述下部侧端与所述垂直支持构件的所述侧壁相互垂直。
5.如权利要求4所述的晶圆架，其特征在于，所述突出部具有第一接触端、第二接触端以及顶端，所述第一接触端与所述第二接触端在所述突出部的相对侧。
6.如权利要求5所述的晶圆架，其特征在于，所述支持本体的所述上部侧端与所述突出部的所述第一接触端互相垂直，所述支持本体的所述下部侧端与所述突出部的所述第二接触端互相垂直。
7.如权利要求6所述的晶圆架，其特征在于，所述第一接触端以及所述第二接触端的至少其中之一被配置以支持所述多个晶圆中的其中之一。
8.一种用于扩散制程的垂直晶舟，其特征在于，所述垂直晶舟包括：
多个权利要求1-7中任一项所述的晶圆架。
9.如权利要求8所述的垂直晶舟，其特征在于，所述垂直晶舟被配置以垂直放入垂直反应器。
10.如权利要求8所述的垂直晶舟，其特征在于，所述垂直晶舟进一步包括：
顶板块；以及
底板块，其特征在于，所述多个晶圆架被配置以连接所述顶板块与所述底板块。
CN201911097103.3A 2019-11-11 2019-11-11 晶圆架及具有晶圆架的垂直晶舟 Pending CN112786500A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201911097103.3A CN112786500A (zh) 2019-11-11 2019-11-11 晶圆架及具有晶圆架的垂直晶舟
US16/788,082 US11574829B2 (en) 2019-11-11 2020-02-11 Wafer rack and vertical wafer boat having the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911097103.3A CN112786500A (zh) 2019-11-11 2019-11-11 晶圆架及具有晶圆架的垂直晶舟

Publications (1)

Publication Number Publication Date
CN112786500A true CN112786500A (zh) 2021-05-11

Family

ID=75749328

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911097103.3A Pending CN112786500A (zh) 2019-11-11 2019-11-11 晶圆架及具有晶圆架的垂直晶舟

Country Status (2)

Country Link
US (1) US11574829B2 (zh)
CN (1) CN112786500A (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018154779A1 (ja) * 2017-02-27 2018-08-30 ミライアル株式会社 基板収納容器
SG11202102655YA (en) * 2018-09-20 2021-04-29 Kokusai Electric Corp Substrate processing apparatus, method of manufacturing semiconductor device and program

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5921773A (en) * 1996-02-22 1999-07-13 Samsung Electonics Co., Ltd. Wafer boat for a vertical furnace
JP2001168175A (ja) * 1999-12-07 2001-06-22 Semiconductor Leading Edge Technologies Inc 熱処理用基板保持具、基板熱処理装置および基板の熱処理方法
US20080185308A1 (en) * 2007-02-01 2008-08-07 Tokyo Electron Limited Semiconductor wafer boat for batch processing
JP2009043862A (ja) * 2007-08-08 2009-02-26 Miraial Kk 枚葉式ウエハケース
CN101667531A (zh) * 2008-09-05 2010-03-10 东京毅力科创株式会社 纵型热处理装置以及基板支承器具
JP2013089845A (ja) * 2011-10-20 2013-05-13 Disco Abrasive Syst Ltd ウエーハカセット
US20160027677A1 (en) * 2014-07-28 2016-01-28 Infineon Technologies Ag Substrate Carrier System for Moving Substrates in a Vertical Oven and Method for Processing Substrates
CN208938944U (zh) * 2018-11-19 2019-06-04 德淮半导体有限公司 晶舟结构

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5387067A (en) * 1993-01-14 1995-02-07 Applied Materials, Inc. Direct load/unload semiconductor wafer cassette apparatus and transfer system
TW296361B (zh) * 1995-06-26 1997-01-21 Kakizaki Seisakusho Kk
US6133121A (en) * 1997-10-15 2000-10-17 Kabushiki Kaisha Toshiba Apparatus for supporting semiconductor wafers and semiconductor wafer processing method using supporting apparatus
DE60032358T2 (de) * 2000-02-15 2007-10-25 Toshiba Ceramics Co., Ltd. Verfahren zur herstellung von si-sic-gliedern zur thermischen behandlung von halbleitern
US7181132B2 (en) * 2003-08-20 2007-02-20 Asm International N.V. Method and system for loading substrate supports into a substrate holder
JP2005340480A (ja) * 2004-05-26 2005-12-08 Nippon Oil Corp 基板カセット用サポートバー
US7410060B2 (en) * 2004-06-02 2008-08-12 Illinois Tool Works Inc. Stackable tray for integrated circuit chips
JP6867149B2 (ja) * 2015-12-25 2021-04-28 日本特殊陶業株式会社 基板保持部材

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5921773A (en) * 1996-02-22 1999-07-13 Samsung Electonics Co., Ltd. Wafer boat for a vertical furnace
JP2001168175A (ja) * 1999-12-07 2001-06-22 Semiconductor Leading Edge Technologies Inc 熱処理用基板保持具、基板熱処理装置および基板の熱処理方法
US20080185308A1 (en) * 2007-02-01 2008-08-07 Tokyo Electron Limited Semiconductor wafer boat for batch processing
JP2009043862A (ja) * 2007-08-08 2009-02-26 Miraial Kk 枚葉式ウエハケース
CN101667531A (zh) * 2008-09-05 2010-03-10 东京毅力科创株式会社 纵型热处理装置以及基板支承器具
JP2013089845A (ja) * 2011-10-20 2013-05-13 Disco Abrasive Syst Ltd ウエーハカセット
US20160027677A1 (en) * 2014-07-28 2016-01-28 Infineon Technologies Ag Substrate Carrier System for Moving Substrates in a Vertical Oven and Method for Processing Substrates
CN208938944U (zh) * 2018-11-19 2019-06-04 德淮半导体有限公司 晶舟结构

Also Published As

Publication number Publication date
US11574829B2 (en) 2023-02-07
US20210143027A1 (en) 2021-05-13

Similar Documents

Publication Publication Date Title
US9822459B2 (en) Clamper and holding jig including same
CN112786500A (zh) 晶圆架及具有晶圆架的垂直晶舟
CN101023011A (zh) 气体支撑的基底承载机构
JP5908266B2 (ja) 陽極化成装置及びそれを備えた陽極化成システム並びに半導体ウエハ
JP2023099530A (ja) 基板ホルダおよび当該基板ホルダを備えるめっき装置
US8845262B2 (en) Substrate processing apparatus, substrate processing method and storage medium storing substrate processing program
CN113291825A (zh) 一种精密气浮平台
JP2015204372A (ja) ガラス板収容治具
US11348815B2 (en) Board storing container
JPH1059454A (ja) 板体収納保持装置
JPH06247483A (ja) 基板用カセット
JP2003077999A (ja) 半導体ウエハ用カセット
CN214588803U (zh) 一种硅片支撑装置及化学槽
CN217306454U (zh) 一种蚀刻装置
US20140048994A1 (en) Non-Contact Substrate Chuck and Vertical Type Substrate Supporting Apparatus Using the Same
JP3020287U (ja) 薄板用支持容器
JP3560494B2 (ja) ウェハ搬送用キャリア
CN114975194A (zh) 晶舟
JP3875435B2 (ja) 基板支持機構
CN213958935U (zh) 一种硅片载板
CN109369028B (zh) 一种蚀刻设备
JPH087637Y2 (ja) 薄板用支持容器
JPH08222622A (ja) ウェハキャリア
JPH08195431A (ja) 基板保持具及び洗浄装置
JP2526152B2 (ja) 基板用カセット

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20210511