CN112786426B - Gas supply method and substrate processing apparatus - Google Patents

Gas supply method and substrate processing apparatus Download PDF

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Publication number
CN112786426B
CN112786426B CN202011178178.7A CN202011178178A CN112786426B CN 112786426 B CN112786426 B CN 112786426B CN 202011178178 A CN202011178178 A CN 202011178178A CN 112786426 B CN112786426 B CN 112786426B
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Prior art keywords
gas
control device
gas supply
flow rate
valve
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CN112786426A (en
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赤池宗明
川手学
相泽高志
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00—Control of flow
    • G05D7/06—Control of flow characterised by the use of electric means
    • G05D7/0617—Control of flow characterised by the use of electric means specially adapted for fluid materials
    • G05D7/0629—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
    • G05D7/0635—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
    • G05D7/0641—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention provides a gas supply method and a substrate processing apparatus. The gas supply method comprises the following steps: a step of closing the second valve and opening the first valve to supply gas to the gas supply pipe, the branch pipe and the gas split ratio control unit located on the secondary side of the gas flow rate control device when the substrate is to be processed; a step of detecting whether the pressure of the gas supply pipe or the branch pipe on the secondary side of the gas flow rate control device reaches a set pressure by a pressure sensor; a step of closing the first valve; and a step of opening the first valve and the second valve to supply the gas to the process container. According to the present invention, it is possible to facilitate the gas to be branched into the plurality of branch pipes in accordance with the branching ratio, and to stably supply the gas in a short time when the branched gas is supplied to the processing container.

Description

Gas supply method and substrate processing apparatus
Technical Field
The present invention relates to a gas supply method and a substrate processing apparatus.
Background
Patent document 1 discloses a gas supply method and a substrate processing apparatus, in which a split flow rate adjusting means performs pressure ratio control for adjusting a split flow rate so that a pressure ratio in each of processing gas branch flow paths becomes a target pressure ratio, and the processing gas from the processing gas supply means is split into a plurality of branch pipes. In this gas supply method, when the pressure in each of the process gas branch flow paths is stable, the control by the split flow rate adjusting means is switched to the pressure constant control for adjusting the split flow rate so as to maintain the pressure in one of the process gas branch flow paths at the time of pressure stabilization, and the additional gas is supplied to the other process gas branch pipe by the additional gas supply means.
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open No. 2007-207808.
Disclosure of Invention
Technical problem to be solved by the invention
The invention provides a gas supply method and a substrate processing apparatus which are beneficial to distributing gas to a plurality of branch pipes according to the distribution ratio and stably supplying gas in a short time when the distributed gas is supplied to a processing container.
Means for solving the problems
A gas supply method according to an aspect of the present invention is a gas supply method performed in a gas supply apparatus for supplying a gas to a process container for processing a substrate, the gas supply apparatus including: at least one gas flow rate control device provided in a gas supply pipe communicating from a gas supply unit to the process container; a gas split ratio control unit configured by two or more gas split ratio control units, wherein the two or more gas split ratio control units are respectively arranged on two or more branch pipes branched on the secondary side of the gas flow control device, and each gas split ratio control unit has a conductance variable flow path capable of changing conductance; a first valve and a pressure sensor located on a secondary side of the gas flow control device and on a primary side of the gas split ratio control unit; and a second valve on a secondary side of the gas split ratio control unit, the gas supply method having: a step of closing the second valve and opening the first valve to supply the gas to the gas supply pipe, the branch pipe, and the gas split ratio control unit located on the secondary side of the gas flow rate control device when the substrate is to be processed; a step of detecting whether or not the pressure of the gas supply pipe or the branch pipe on the secondary side of the gas flow rate control device reaches a set pressure by the pressure sensor; a step of closing the first valve; and a step of opening the first valve and the second valve to supply the gas to the process container.
Effects of the invention
According to the present invention, it is possible to provide a gas supply method and a substrate processing apparatus which are advantageous in that a gas is branched into a plurality of branch pipes in accordance with a branching ratio, and the gas is stably supplied in a short time when the branched gas is supplied to a processing container.
Drawings
Fig. 1 is a longitudinal sectional view showing an example of the substrate processing apparatus according to embodiment 1.
Fig. 2 is a diagram illustrating control of the gas supply device, and is a diagram showing a time-varying table of the MFC flow rate and the FRC flow rate.
Fig. 3 is a longitudinal sectional view showing an example of the substrate processing apparatus according to embodiment 2.
Description of the reference numerals
20: Treatment vessel
60. 60A: gas supply device
61. 61A, 61B: gas supply unit
62. 62A, 62B: gas flow control device
63. 63A, 63B: first valve
66: Gas split ratio control unit
66A-66H: gas split ratio control unit
67. 67A to 67H: second valve
68. 68A, 68B: gas supply pipe
69. 69A, 69B: branching pipe
G: substrate sheet
Detailed Description
Hereinafter, a gas supply method and a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the accompanying drawings. In the present specification and the drawings, substantially the same components are denoted by the same reference numerals, and repetitive description thereof will be omitted.
[ Substrate processing apparatus and gas supply method according to embodiment 1 ]
First, an example of the substrate processing apparatus and the gas supply method according to embodiment 1 of the present invention will be described with reference to fig. 1 and 2. Fig. 1 is a longitudinal sectional view showing an example of the substrate processing apparatus according to embodiment 1. Fig. 2 is a diagram for explaining control of the gas supply device, and is a diagram showing a time-varying table of the MFC flow rate and the FRC flow rate.
The substrate processing apparatus 100 shown in fig. 1 is an inductively coupled plasma (Inductive Coupled Plasma:icp) processing apparatus that performs various substrate processing methods on a substrate G (hereinafter, simply referred to as a "substrate") that is rectangular in plan view for a flat panel display (FLAT PANEL DISPLAY, hereinafter, referred to as an "FPD"). Glass is mainly used as a material of the substrate G, but transparent synthetic resin or the like may be used depending on the application. Here, the substrate process includes an etching process, a film forming process using a CVD (Chemical Vapor Deposition ) method, and the like. Examples of the FPD include a Liquid crystal display (Liquid CRYSTAL DISPLAY: LCD), an electroluminescent display (Electro Luminescence: EL), a plasma display panel (PLASMA DISPLAY PANEL; PDP), and the like. The substrate G includes a supporting substrate in addition to the manner in which the circuit is patterned on the surface thereof. The planar dimensions of the FPD substrates are increased in size with the passage of each generation, and the planar dimensions of the substrates G processed by the substrate processing apparatus 100 include, for example, at least the dimensions ranging from the dimensions of 1500mm×1800mm in the 6 th generation to the dimensions of 3000mm×3400mm in the 10.5 th generation. In addition, the thickness of the substrate G is about 0.2mm to several mm.
The substrate processing apparatus 100 shown in fig. 1 includes a rectangular box-shaped processing container 20, a substrate mounting table 70 which is arranged in the processing container 20 and is capable of mounting a substrate G and has a rectangular outer shape in plan view, and a control unit 90. In this embodiment, the substrate mounting table is also formed in a circular shape or an elliptical shape, and the substrate mounted on the substrate mounting table is also formed in a circular shape or the like.
The processing container 20 is divided into an upper space and a lower space by a metal window 50, an antenna chamber a as an upper space is formed by the upper chamber 13, and a processing region S (processing chamber) as a lower space is formed by the lower chamber 17. In the processing container 20, a rectangular annular support frame 14 is disposed so as to protrude inward of the processing container 20 at a position that is a boundary between the upper chamber 13 and the lower chamber 17, and a metal window 50 is attached to the support frame 14.
The upper chamber 13 forming the antenna chamber a is formed by the side wall 11 and the top plate 12, and the whole thereof is formed of a metal such as aluminum, aluminum alloy, or the like.
The lower chamber 17 having the processing region S therein is formed of the side wall 15 and the bottom plate 16, and is entirely formed of a metal such as aluminum, aluminum alloy, or the like. In addition, the side wall 15 is grounded via a ground line 21.
The support frame 14 is made of a metal such as conductive aluminum or aluminum alloy, and can be referred to as a metal frame.
A rectangular annular (endless) seal groove 22 is formed at the upper end of the side wall 15 of the lower chamber 17, a seal member 23 such as an O-ring is fitted into the seal groove 22, and the seal member 23 is held by the contact surface of the support frame 14, thereby forming a seal structure between the lower chamber 17 and the support frame 14.
A carry-in/carry-out port 18 for carrying in and carrying out the substrate G to and from the lower chamber 17 is opened in the side wall 15 of the lower chamber 17, and the carry-in/carry-out port 18 is configured to be openable and closable by a gate valve 24. The lower chamber 17 is adjacent to a transfer chamber (not shown) having a transfer mechanism incorporated therein, and opens and closes a gate valve 24 to carry in and out the substrate G through a carry-in/out port 18 by the transfer mechanism.
The bottom plate 16 of the lower chamber 17 is provided with a plurality of exhaust ports 19, each exhaust port 19 is connected to a gas exhaust pipe 25, and the gas exhaust pipe 25 is connected to an exhaust device 27 via an on-off valve 26. The gas exhaust pipe 25, the on-off valve 26, and the exhaust device 27 form a gas exhaust portion 28. The evacuation device 27 has a vacuum pump such as a turbo molecular pump, and is configured to be capable of evacuating the lower chamber 17 to a predetermined vacuum degree during processing. A pressure gauge (not shown) is provided at an appropriate position of the lower chamber 17, and monitoring information of the pressure gauge is sent to the control unit 90.
The substrate stage 70 has a base material 73 and an electrostatic chuck 76 formed on an upper surface 73a of the base material 73.
The base material 73 is formed of a laminate of the upper base material 71 and the lower base material 72. The upper base 71 is rectangular in shape in plan view, and has a planar dimension similar to that of the FPD mounted on the substrate stage 70. For example, the upper base 71 has a planar dimension similar to that of the substrate G to be placed thereon, the length of the long side is 1800mm to 3400mm, and the length of the short side can be set to a dimension of 1500mm to 3000 mm. For this planar size, the sum of the thicknesses of the upper substrate 71 and the lower substrate 72 is, for example, about 50mm to 100 mm.
The lower substrate 72 is provided with a temperature control medium flow path 72a which meanders so as to cover the entire rectangular plane, and is formed of stainless steel, aluminum, an aluminum alloy, or the like. On the other hand, the upper base 71 is also made of stainless steel, aluminum alloy, or the like. The temperature control medium flow path 72a may be provided in the upper substrate 71 and/or the electrostatic chuck 76, for example. The base material 73 may not be a laminate of two members as in the illustrated example, and may be formed of one member such as aluminum or an aluminum alloy.
A box-shaped susceptor 78 having a stepped portion on the inner side thereof formed of an insulating material is fixed to the bottom plate 16 of the lower chamber 17, and the substrate stage 70 is placed on the stepped portion of the susceptor 78.
An electrostatic chuck 76 for directly placing the substrate G is formed on the upper surface of the upper base 71. The electrostatic chuck 76 includes a ceramic layer 74 which is a dielectric coating formed by sputtering a ceramic such as alumina, and a conductive layer 75 (electrode) having an electrostatic adsorbing function embedded in the ceramic layer 74.
The conductive layer 75 is connected to a dc power supply 85 via a power supply line 84. When a switch (not shown) provided in the power supply line 84 is turned on by the control unit 90, a dc voltage is applied from the dc power supply 85 to the conductive layer 75, and a coulomb force is generated. The substrate G is electrostatically attracted to the upper surface of the electrostatic chuck 76 by the coulomb force, and is held in a state of being placed on the upper surface of the upper base 71.
A temperature control medium flow path 72a which meanders so as to cover the entire rectangular plane is provided on the lower substrate 72 constituting the substrate stage 70. A delivery pipe 72b for supplying a temperature control medium to the temperature control medium passage 72a and a return pipe 72c for discharging the temperature control medium which has been heated by flowing through the temperature control medium passage 72a are connected to both ends of the temperature control medium passage 72a.
As shown in fig. 1, the delivery pipe 72b and the return pipe 72c communicate with a delivery flow path 87 and a return flow path 88, respectively, and the delivery flow path 87 and the return flow path 88 communicate with a cooler 86. The cooler 86 includes a main body portion for controlling the temperature and/or discharge flow rate of the temperature control medium, and a pump (not shown) for pumping the temperature control medium. In addition, as the temperature adjustment medium, a refrigerant may be suitably used, and Galden (registered trademark), fluorinert (registered trademark), or the like may be used. The delivery flow path 87, the return flow path 88, and the cooler 86 constitute a temperature control device 89. The temperature adjustment method illustrated in the drawing is a method in which the temperature adjustment medium is circulated through the lower substrate 72, but may be a method in which a heater or the like is incorporated in the lower substrate 72, and the temperature adjustment is performed by the heater, or may be a method in which the temperature adjustment is performed by both the temperature adjustment medium and the heater. In addition, instead of the heater, temperature adjustment may be performed in which heating is performed by circulating a high-temperature adjustment medium. The heater as the resistor is formed of tungsten, molybdenum, or a compound of any of these metals with aluminum oxide, titanium, or the like. In the illustrated example, the temperature control medium flow path 72a is formed in the lower base 72, but for example, the electrostatic chuck 76 may have a temperature control medium flow path.
A temperature sensor such as a thermocouple is disposed on the upper substrate 71, and monitoring information of the temperature sensor is transmitted to the control unit 90 in real time. Then, based on the transmitted monitoring information, the control section 90 performs temperature adjustment control of the upper substrate 71 and the substrate G. More specifically, the temperature and/or flow rate of the temperature control medium supplied from the cooler 86 to the conveyance flow path 87 is adjusted by the control unit 90. Then, the temperature control of the substrate stage 70 is performed by circulating the temperature control medium subjected to the temperature control and/or the flow rate control through the temperature control medium flow path 72 a. A temperature sensor such as a thermocouple may be provided on the lower substrate 72 and/or the electrostatic chuck 76.
A stepped portion is formed by the electrostatic chuck 76, the outer periphery of the upper base 71, and the upper surface of the rectangular member 78, and a rectangular frame-shaped focus ring 79 is placed on the stepped portion. In a state where the focus ring 79 is provided at the stepped portion, the upper surface of the focus ring 79 is set lower than the upper surface of the electrostatic chuck 76. The focus ring 79 is formed of ceramic such as alumina or quartz.
The lower surface of the lower base material 72 is connected to the power supply member 80. The lower end of the power supply member 80 is connected to a power supply line 81, and the power supply line 81 is connected to a high-frequency power supply 83 as a bias power supply via a matching unit 82 for impedance matching. By applying high-frequency electric power of, for example, 3.2MHz from the high-frequency power supply 83 to the substrate stage 80, an RF bias voltage is generated, and ions generated by the high-frequency power supply 59, which is a generation source for plasma generation, described below, can be attracted to the substrate G. Therefore, in the plasma etching process, the etching rate and the etching selectivity can be increased together. Further, a through hole (not shown) may be formed in the lower base 72, and the power feeding member 80 may be connected to the lower surface of the upper base 81 through the through hole. Thus, the substrate stage 70 forms a bias electrode for placing the substrate G and generating an RF bias voltage. In this case, a portion which becomes the ground potential in the chamber functions as a counter electrode to the bias electrode, and constitutes a return circuit for the high-frequency electric power. The metal window 50 may be formed as a part of a return circuit for high-frequency electric power.
The metal window 50 is formed of a plurality of divided metal windows 57. The number of divided metal windows 57 (4 in the cross-sectional direction in fig. 1) forming the metal window 50 can be set to a plurality of numbers such as12 and 24.
The respective divided metal windows 57 are insulated from the support frame 14 and the adjacent divided metal windows 57 by insulating members 56. Here, the insulating member 56 is formed of a fluororesin such as PTFE (Polytetrafluoroethylene).
The divided metal window 57 has a conductor plate 30 and a shower plate 40. The conductor plate 30 and the shower plate 40 are each formed of aluminum, an aluminum alloy, stainless steel, or the like, which is a metal that is non-magnetic and conductive and has corrosion resistance, or a metal subjected to surface processing that is corrosion resistant. The surface treatment having corrosion resistance can be, for example, anodic oxidation treatment, ceramic plating, or the like. In addition, a plasma resistant coating may be applied by an anodic oxidation process or ceramic spraying on the lower surface of the shower plate 40 opposite the treatment region S. The conductor plates 30 are grounded via a ground line (not shown), and the shower plate 40 is also grounded via the conductor plates 30 joined to each other.
As shown in fig. 1, a spacer (not shown) made of an insulating material is disposed above each of the divided metal windows 57, and the high-frequency antenna 54 is disposed by the spacer at a distance from the conductor plate 30. The high-frequency antenna 54 is formed by winding an antenna made of a metal having good conductivity such as copper in a ring shape or a spiral shape. For example, loop antennas may be arranged multiple times.
The high-frequency antenna 54 is connected to a power feeding member 57a extending above the upper chamber 13, the upper end of the power feeding member 57a is connected to a power feeding line 57b, and the power feeding line 57b is connected to a high-frequency power supply 59 via an impedance matching unit 58. High-frequency electric power of, for example, 13.56MHz is applied from the high-frequency power supply 59 to the high-frequency antenna 54, thereby forming an induced electric field in the lower chamber 17. The induced electric field is used to plasmatize the process gas supplied from the shower plate 40 to the process field S, thereby generating inductively coupled plasma, and ions in the plasma are supplied to the substrate G. Further, each of the divided metal windows 57 may have a unique high-frequency antenna, and control of individually applying high-frequency electric power to each of the high-frequency antennas can be performed.
The high-frequency power supply 59 is a generation source for generating plasma, and the high-frequency power supply 83 connected to the substrate stage 70 is a bias source for attracting generated ions and imparting kinetic energy thereto. Thus, the ion generating source generates plasma by inductive coupling, and the bias source serving as another power source is connected to the substrate stage 70 to control the ion energy, so that the generation of plasma and the control of the ion energy can be independently performed, and the degree of freedom of processing can be improved. The frequency of the high-frequency electric power output from the high-frequency power supply 59 is preferably set in the range of 0.1 to 500 MHz.
The metal window 50 is formed of a plurality of divided metal windows 57, and each of the divided metal windows 57 is suspended from the ceiling 12 of the upper chamber 13 by a plurality of suspension rods (not shown). Since the high-frequency antenna 54 contributing to the generation of plasma is disposed on the upper surface of the divided metal window 57, the high-frequency antenna 54 is suspended from the top plate 12 via the divided metal window 57.
A gas diffusion groove 32 is formed in the lower surface of the conductor plate body 31 where the conductor plate 30 is formed. In addition, the gas diffusion groove can also be arranged on the upper surface of the spray plate. The gas diffusion groove has a concave shape formed in a long shape, and also has a concave shape formed in a planar shape.
The shower plate body 41 forming the shower plate 40 is provided with a plurality of gas discharge holes 42 penetrating the shower plate body 41 and communicating with the gas diffusion grooves 32 of the conductor plate 30 and the processing region S.
A plurality of (four in the example of the figure) supply ports 12a are opened in the top plate 12 of the upper chamber 13, and a unique gas introduction pipe 55 is provided for each supply port 12a so as to pass through each split metal window 57 in an airtight manner. In each gas introduction pipe 55, a branch pipe 69 constituting a gas supply device 60 described in detail below is in fluid communication. In the example shown in the figure, for example, four branch pipes 69 are each in fluid communication with the unique gas introduction pipe 55, and the process gas is supplied from each of the four gas introduction pipes 55 to each of the four divided metal windows 57. In contrast, when the divided metal window 57 is three or less and five or more, any two of the four gas introduction pipes 55 may be integrated into one and may be in fluid communication with one divided metal window 57. The four gas introduction pipes 55 may be branched into plural pieces in the antenna chamber a and may be in fluid communication with five or more divided metal windows 57.
The gas supply device 60 includes: a gas supply section 61; a gas supply pipe 68 communicating with the gas supply portion 61; and a branching pipe 69 branched from the gas supply pipe 68 into four and communicating with the corresponding gas introduction pipe 55. As described below, various valves, sensors, and the like are provided in the gas supply pipe 68 and/or the branch pipe 69.
In the plasma processing, the process gas supplied from the gas supply device 60 is supplied to the gas diffusion grooves 32 of the conductor plates 30 included in the respective divided metal windows 57 through the gas introduction pipe 55. Then, the gas is discharged from each gas diffusion tank 32 through the gas discharge holes 42 of each shower plate 40 to the processing region S.
A gas flow rate control device 62 such as a mass flow controller (MFC: mass Flow Controller) is disposed downstream of the gas supply portion 61 in the gas flow direction. The first valve 63 for blocking the flow of gas to the gas supply pipe 68 located on the downstream side is disposed on the secondary side of the gas flow rate control device 62 (downstream side of the flow of gas, hereinafter, the downstream side of the object is referred to as the secondary side). The third valve 65 is disposed on the secondary side of the first valve 63 and on the primary side of the branch pipe 69 (the upstream side of the gas flow, and the upstream side of the object is referred to as the primary side). The third valve 65 may not be provided.
A pressure sensor 64 such as a pressure switch is disposed between the first valve 63 and the third valve 65 in the gas supply pipe 68.
Gas split ratio control units 66A, 66B, 66C, 66D such as FRCs (Flow Ratio Controller, flow rate regulators) are disposed in the four branch pipes 69, respectively. The gas split ratio control units 66A, 66B, 66C, 66D each have a conductance variable flow path (not shown) that can change conductance. More specifically, a laminar flow element (bypass passage) and/or a hot wire sensor, a flow control valve, an orifice, and the like (none of which are shown) are provided inside. The gas split ratio control units 66A, 66B, 66C, and 66D can adjust the split amounts (split ratios) of the process gas split into the branch pipes by adjusting the opening degrees of the respective orifices. In the gas split ratio control units 66A, 66B, 66C, and 66D, the process gas is caused to flow to the secondary side by a pressure difference (differential pressure) in the primary side and secondary side pipes.
In the illustrated example, the gas split ratio control section 66 is constituted by four gas split ratio control units 66A, 66B, 66C, 66D. In the gas split ratio control unit 66, the conductance of each of the plurality of gas split ratio control units 66A, 66B, 66C, and 66D is variably controlled, so that the gas flow rate ratio supplied to each of the plurality of branch pipes 69 can be controlled.
In each of the branch pipes 69, unique second valves 67A, 67B, 67C, 67D are disposed on the secondary sides of the gas split ratio control units 66A, 66B, 66C, 66D, respectively.
The process gas split at a predetermined split ratio is supplied to the individual split metal windows 57 through the respective branch pipes 69 provided in the four gas split ratio control units 66A, 66B, 66C, 66D. Specifically, examples include a central processing region, a central portion of an edge in an outer peripheral processing region, a corner portion in the outer peripheral processing region, and an intermediate processing region between the central processing region and the outer peripheral processing region. The four regions described above correspond to the four gas introduction pipes 55, respectively. The number of the regions is not limited to four, but may be five, six, or more as needed. In this case, the number of the corresponding gas introduction pipes 55 is the number corresponding thereto. That is, in the case where the number of the regions is five, the number of the gas introduction pipes 55 is five, in the case where the number of the regions is six, the number of the gas introduction pipes 55 is six, and the like. The same applies to the gas split ratio control unit 66, the branch pipe 69, and the like located on the upstream side of the gas introduction pipe 55. The number of the divided metal windows 57 constituting each region may be plural. In this case, the gas introduction pipe 55 corresponding to each region is branched and connected to the plurality of divided metal windows 57. In this case, the split ratio of the process gas supplied to each process field is set in advance according to the recipe (process recipe). In the illustrated example, for simplicity of explanation, the four divided metal windows 57 in the device cross section are described as corresponding to four regions of the processing region S.
In the illustrated example, the gas supply pipe 68 is provided to extend from one gas supply portion 61, and four branch pipes 69 are provided to branch off from the gas supply pipe 68. For example, a mode in which individual gas supply pipes are provided to extend from each of the plurality of gas supply units, and each gas supply pipe is branched into a plurality of branches and has a plurality of branching pipes can be exemplified. A plurality of process gases for performing various processes such as film formation process and etching process are supplied from one gas supply section 61 to the gas supply pipe 68. In addition, in the case of a system having a plurality of gas supply units, a plurality of process gases for performing film formation processing, etching processing, and the like are supplied from each gas supply unit, and a system in which a process gas for performing film formation processing and the like is supplied from one gas supply unit, and a carrier gas such as a rare gas is supplied from another gas supply unit, and the like is also included. In addition to this, there are also systems and the like in which oxygen gas and the like for controlling deposition of a reaction product are supplied from other gas supply sections, and in this specification, these rare gases, oxygen gas and the like are also included in the process gas.
The control unit 90 controls operations of the respective components of the substrate processing apparatus 100, for example, the cooler 86, the high-frequency power supplies 59 and 83, the gas supply device 60, the gas exhaust unit 28 that operates based on monitoring information transmitted from the pressure gauge, and the like. The control section 90 has a CPU (Central Processing Unit: central processing unit), a ROM (Read Only Memory), and a RAM (Random Access Memory: random access Memory). The CPU executes a predetermined process according to a processing scheme stored in a memory area of the RAM or ROM. The processing recipe is set with control information of the substrate processing apparatus 100 corresponding to the processing conditions. The control information includes, for example, a gas flow rate, a pressure in the process container 20, a temperature of the underlying substrate 72, a process time, and the like.
The processing scheme and the program used by the control section 90 may be stored in, for example, a hard disk, a magnetic disk, an optical magnetic disk, or the like. The processing scheme and the like may be a system in which a removable computer-readable storage medium stored in a CD-ROM, DVD, memory card, or the like is attached to the control unit 90 and read. The control unit 90 may also have an input device such as a keyboard and a mouse for inputting commands, a display device such as a display for visually displaying the operation state of the substrate processing apparatus 100, and a user interface such as an output device such as a printer.
Next, a gas supply method according to embodiment 1 will be described.
As described above, the split ratio of the process gas to each of the branch pipes 69 that communicate with each of the divided metal windows 57 corresponding to the plurality of regions (center region, peripheral region, etc.) of the process field S is set according to the process recipe, and the split ratio of each process recipe is stored in the control device 90.
When the substrate G is processed by supplying the process gas from the gas supply portion 61 based on a certain processing recipe, the control device 90 first performs control to close the second valves 67A, 67B, 67C, 67D of the respective branch pipes 69 and to open the first valve 63 and the third valve 65.
By this control, the process gas is supplied to the gas supply pipe 68, the branch pipes 69, and the gas split ratio control units 66A, 66B, 66C, and 66D located on the secondary side of the gas flow rate control device 62 (the step of supplying the gas to the gas supply pipe, the branch pipes, and the gas split ratio control unit). That is, in this step, the process gas is supplied into the gas split ratio control units 66A, 66B, 66C, and 66D in advance before the process gas is supplied from the gas supply unit 61 to each process field via the gas flow rate control device 62.
The effect of this step will be described with reference to fig. 2. In fig. 2, when the control device 90 starts the supply start control of the process gas to the gas flow control device 62 at time 0 seconds, the supply of the process gas (gas discharge of the MFC) is started at time t1, and the normal MFC flow rate is set at time t 2: q1.
However, in a gas supply apparatus in which a branch pipe is provided in the middle of a gas supply pipe and an FRC is provided in each branch pipe, when a certain amount of process gas is not flowing through the FRC even when the MFC flow rate is a normal flow rate, the FRC cannot be controlled normally, and it is difficult to flow the process gas at the normal flow rate through each FRC. For this reason, it takes a long time to flow the process gas at a normal flow rate from the start of gas discharge from the MFC to the FRCs.
Since it is necessary to flow a gas at a certain flow rate through the FRC at the start of the FRC control, for example, as shown in fig. 2, the FRC flow rate (total flow rate of all FRC flows) increases gradually to approach Q1, which is a normal process flow rate, although the process gas starts to flow through the FRC at time t1 (see a dotted line chart). As a result, it takes a long time until the FRC flow rate reaches Q1 (or near Q1), which is the process flow rate, and it takes a long time until the flow rate at which the FRCs can be controlled is reached. Accordingly, the start time of the FRC control is time t3, and a long time Δt1 (see the two-dot chain line chart) elapses from time 0 seconds. As a result, it takes a long time until the flow rate ratio of the process gas supplied to the process field S is stabilized.
In the gas supply method according to the present embodiment, in the step of supplying the gas to the gas supply pipe, the branch pipe, and the gas split ratio control unit, the process gas having a certain flow rate Q2 (< Q1) is already flowing to the FRC located in each branch pipe at a stage of 0 seconds from the start of the gas supply from the MFC. By this step, the time until the FRC flow rate (total flow rate of all FRC flow rates) approaches Q1, which is the process flow rate, becomes extremely short (refer to a dot-dash line graph). This shortens the time until the flow rate at which the control of each FRC is possible is reached. Therefore, as shown in fig. 2, the start timing of the FRC control is significantly earlier from the timing t3 to the timing t4 (refer to the three-dot chain line chart). As a result, the flow rate of the process gas supplied to the process field S is stabilized relatively early.
In the above-described step, the pressure in the secondary-side gas supply pipe 68 of the gas flow rate control device 62 or the pressure in the branch pipe 69 (primary side of the gas split ratio control units 66A, 66B, 66C, 66D) is measured constantly by the pressure sensor 64 located between the first valve 63 and the third valve 65. The measured measurement data is transmitted to the control device 90 at any time.
The control device 90 stores data on the set pressure. The set pressure is a pressure suitable for starting the FRC control as early as possible, and can be set in a range of 50Torr to 300Torr (1 torr=133.4 Pa), for example.
When the control device 90 detects that the pressure of the pressure sensor 64 reaches the set pressure (step of detecting whether the set pressure is reached), the control device 90 then executes control of closing the first valve 63 (first valve closing step).
By closing the first valve 63 and the second valves 67A, 67B, 67C, 67D in the branch pipes 69 in this way, the pressure in the secondary-side gas supply pipe 68 of the gas flow rate control device 62 and the pressure in the branch pipes 69 (the primary side of the gas split ratio control units 66A, 66B, 66C, 66D) are maintained at the set pressures.
Thereafter, the control device 90 performs control to open the first valve 63 and the second valves 67A, 67B, 67C, 67D at predetermined timings according to the processing recipe, and supplies the process gas to the corresponding region in the process region S via the respective branch pipes 69 (a step of supplying the gas to the process container).
According to the substrate processing apparatus 100 and the gas supply method of the present embodiment, when the substrate G is to be processed, a certain amount of gas is supplied in advance to the inside of the FRC, and thus the time for the FRC to reach the normal flow rate can be shortened. Further, the process gas can be stably supplied to the process field S in a short time. In addition, when the same effect is to be obtained by optimizing the volumes (length, thickness, etc.) of the gas supply pipe and/or the branch pipe, since the flow rate of the process gas to be applied to each device is different, it is necessary to change the volumes of the various pipes to the optimal volumes for each device, and this embodiment does not require such a hardware change.
[ Substrate processing apparatus and gas supply method according to embodiment 2 ]
Next, an example of the substrate processing apparatus and the gas supply method according to embodiment 2 of the present invention will be described with reference to fig. 3. Fig. 3 is a longitudinal sectional view showing an example of the substrate processing apparatus according to embodiment 2.
The substrate processing apparatus 100A is different from the substrate processing apparatus 100 in that the substrate processing apparatus 100A has a gas supply apparatus 60A including a main gas supply system that supplies a main gas and an auxiliary gas supply system that supplies an auxiliary gas.
Here, the main gas and the auxiliary gas are the same kind or different kinds of process gases, and either one or both of them are a plurality of process gases for performing various processes such as film formation process and etching process, carrier gases such as rare gas, oxygen gas for controlling deposition of reaction products, and the like. In the present specification, the process gas is included, and the gas obtained by mixing the main gas and the auxiliary gas is also included in the process gas.
The main gas supply system includes a main gas supply portion 61A (gas supply portion) and a main gas supply pipe 68A (an example of a gas supply pipe) that communicates with the main gas supply portion 61A. The main gas supply system further includes a main gas branch pipe 69A (an example of a branch pipe) branched from the main gas supply pipe 68A to four and communicating with the corresponding gas introduction pipe 55.
A primary gas flow rate control device 62A (gas flow rate control device) is disposed on the secondary side of the primary gas supply portion 61A, and a first valve 63A is disposed on the secondary side of the primary gas flow rate control device 62A. The third valve 65A is disposed on the secondary side of the first valve 63A and on the primary side of the main gas branch pipe 69A. A pressure sensor 64A is disposed between the first valve 63A and the third valve 65A.
Gas split ratio control units 66A, 66B, 66C, and 66D are disposed in the four main gas branch pipes 69A, respectively. In each of the branch pipes 69A, unique second valves 67A, 67B, 67C, 67D are disposed on the secondary sides of the gas split ratio control units 66A, 66B, 66C, 66D, respectively.
On the other hand, the assist gas supply system includes an assist gas supply portion 61B (gas supply portion) and an assist gas supply pipe 68B (an example of a gas supply pipe) that communicates with the assist gas supply portion 61B. The assist gas supply system further includes assist gas branch pipes 69B (an example of the branch pipes) branched from the assist gas supply pipe 68B into four and communicating with the respective corresponding gas introduction pipes 55.
An assist gas flow rate control device 62B (gas flow rate control device) is disposed on the secondary side of the assist gas supply portion 61B, and a first valve 63B is disposed on the secondary side of the assist gas flow rate control device 62B. The third valve 65B is disposed on the secondary side of the first valve 63B and on the primary side of the assist gas branching pipe 69B. A pressure sensor 64B is disposed between the first valve 63B and the third valve 65B.
Gas split ratio control units 66E, 66F, 66G, and 66H are disposed in the four auxiliary gas branch pipes 69B, respectively. In each of the branch pipes 69B, unique second valves 67E, 67F, 67G, 67H are disposed on the secondary sides of the gas split ratio control units 66E, 66F, 66G, 66H, respectively.
The gas split ratio control unit 66 is composed of eight gas split ratio control units 66A, 66B, 66C, 66D, 66E, 66F, 66G, 66H.
The secondary side of the second valves 67A, 67B, 67C, 67D in the main gas branch pipes 69A constituting the main gas supply system communicates with the secondary side of the second valves 67E, 67F, 67G, 67H in the auxiliary gas branch pipes 69B constituting the auxiliary gas supply system.
In the gas supply method according to embodiment 2, the set pressure in the main gas supply system and the set pressure in the auxiliary gas supply system may be the same pressure or different pressures, and the control device 90 controls both the gas supply systems in the same manner as in the gas supply method according to embodiment 1.
That is, the main gas supply system and the auxiliary gas supply system each circulate a certain flow rate of the process gas to the gas split ratio control units 66A to 66H in advance, and close the first valves 63A and 63B when the pressure gauges 64A and 64B are set to the set pressures, respectively. Next, according to the processing scheme, the first valves 63A, 63B and the second valves 67A to 67H are opened, so that the main gas and the auxiliary gas corresponding to the split ratio are mixed in the secondary side of the second valves 67A to 67D to generate four kinds of processing gases. Each of the generated process gases is supplied to the corresponding four regions of the process regions S through each of the branch pipes 69A. The area corresponding to the processing domain S is not limited to four, and may be five, six, or more as in embodiment 1. In this case, the supply system of the main gas and the auxiliary gas may be set according to the number of regions.
[ Experiment for verifying time to stable supply of process gas ]
The present inventors conducted the following experiments, namely: the substrate processing apparatus shown in fig. 3 was produced, and the time required for stable supply of the process gas (final convergence time) was measured by varying the set pressures of the main gas supply system and the auxiliary gas supply system. Here, the final convergence time is a time required to achieve a difference rate from the target gas flow rate of ±2% or less.
In this experiment, the region where the process gas was previously stored was different. Specifically, in fig. 3, in comparative examples 1 to 5, control is performed to close the third valves 65A and 65B and to store the process gas on the primary side of the third valves 65A and 65B (the process gas is not supplied to the FRC in advance), and in examples 1 to 4, control is performed to supply the process gas to the FRC in advance. In the reference example, the process gas is not supplied to the FRC in advance, and the pressure in each supply system is zero in the conventional control method. Table 1 below shows the conditions and effects of the reference examples, the comparative examples, and the examples.
[ Table 1]
As is clear from table 1, the final convergence time of comparative examples 3 and 4 was longer than that of the reference example, and no effect was obtained.
The final convergence time of each example was found to be reduced compared to the reference example. In example 4 in which the set pressures of the main gas supply system and the auxiliary gas supply system were the same and were each 200Torr, the final convergence time was significantly shortened to 20% or less, and it was verified that it is preferable to set the pressures in both supply piping systems to the same level and to the level of 200 Torr.
The structures and the like listed in the above embodiments may be other embodiments configured by combining other constituent elements and the like, and the present invention is not limited to the structures shown here. In this regard, modifications may be made without departing from the scope of the present invention, and the modifications may be appropriately determined according to the application mode.
For example, the substrate processing apparatuses 100 and 100A illustrated in the drawings have been described as inductively coupled plasma processing apparatuses having metal windows, but when a configuration is adopted in which gas is supplied to a plurality of regions in a processing container at a predetermined flow rate ratio, the inductively coupled plasma processing apparatus may be configured with dielectric windows instead of metal windows, or may be configured as another type of plasma processing apparatus. Specifically, electron cyclotron resonance plasma (Electron Cyclotron resonance Plasma; ECP), microwave excitation plasma (Helicon WAVE PLASMA; HWP), parallel plate plasma (CAPACITIVELY COUPLED PLASMA; CCP) can be cited. In addition, microwave excited Surface wave plasma (Surface WAVE PLASMA; SWP) can be cited. These plasma processing apparatuses include ICP, each of which can independently control ion flux and ion energy, can freely control etching shape, selectivity, and can obtain high electron density of the order of 10 11 to 10 13cm-3.

Claims (10)

1. A gas supply method performed in a gas supply apparatus that supplies a gas to a process container for processing a substrate, the gas supply method characterized by:
The gas supply device includes:
at least one gas flow rate control device provided in a gas supply pipe communicating from a gas supply unit to the process container;
A gas split ratio control unit configured by two or more gas split ratio control means, the two or more gas split ratio control means being provided in two or more branch pipes branching off from a secondary side of the gas flow control device, the secondary side being a downstream side of the gas flow, the gas split ratio control means having a variable conductance flow path in which conductance can be changed;
a first valve and a pressure sensor located on the secondary side of the gas flow control device and on the primary side of the gas split ratio control unit, wherein the primary side is an upstream side of the gas flow; and
A second valve located at the secondary side of the gas split ratio control unit,
The gas supply method includes:
A step of closing the second valve and opening the first valve to supply the gas to the gas supply pipe, the branch pipe, and the gas split ratio control unit located on the secondary side of the gas flow rate control device when the substrate is to be processed;
a step of detecting, with the pressure sensor, whether or not the pressure of the gas supply pipe or the branch pipe on the secondary side of the gas flow rate control device reaches a set pressure;
A step of closing the first valve; and
And a step of opening the first valve and the second valve to supply the gas to the process container.
2. The gas supply method according to claim 1, wherein:
The gas split ratio control unit controls the gas flow rate ratio supplied to each of the plurality of branch pipes by variably controlling the conductance of each of the plurality of gas split ratio control units.
3. The gas supply method according to claim 1 or 2, characterized in that:
the plurality of branch pipes are respectively communicated with corresponding processing regions of the processing container, and the gas flowing through the respective branch pipes is supplied to the corresponding processing regions.
4. A gas supply method according to claim 3, wherein:
The gas comprises a main gas and an auxiliary gas,
The gas supply part has a main gas supply part and an auxiliary gas supply part,
The gas flow rate control device comprises a gas flow rate control device for main gas and a gas flow rate control device for auxiliary gas,
The gas supply pipe includes a main gas supply pipe through which the main gas flows and an auxiliary gas supply pipe through which the auxiliary gas flows,
The branch pipe includes a main gas branch pipe through which the main gas flows and an auxiliary gas branch pipe through which the auxiliary gas flows,
The secondary side of the second valve of the main gas branching pipe communicates with the secondary side of the second valve of the corresponding auxiliary gas branching pipe,
The auxiliary gas is supplied to the main gas to generate two or more kinds of process gases, and the two or more kinds of process gases are supplied to the corresponding process regions of the process container, respectively.
5. The gas supply method according to claim 4, wherein:
Detecting whether or not the pressure of the main gas supply pipe or the main gas branch pipe on the secondary side of the main gas flow rate control device reaches the set pressure, detecting whether or not the pressure of the auxiliary gas supply pipe or the auxiliary gas branch pipe on the secondary side of the auxiliary gas flow rate control device reaches the set pressure, closing the first valves on the secondary side of both the main gas flow rate control device and the auxiliary gas flow rate control device after the pressures of both reach the set pressures,
The first valve of both and the second valve of both are opened to generate the process gas.
6. A substrate processing apparatus having a gas supply device for supplying a gas to a processing container for processing a substrate, the substrate processing apparatus comprising:
at least one gas flow rate control device provided in a gas supply pipe communicating from a gas supply unit to the process container;
a gas split ratio control unit configured by gas split ratio control means which are provided in two or more branch pipes branched from a secondary side of the gas flow control device, the secondary side being a downstream side of the gas flow, and which have a variable conductance flow path in which conductance can be changed;
A first valve and a pressure sensor located on the secondary side of the gas flow control device and on the primary side of the gas split ratio control unit, wherein the primary side is an upstream side of the gas flow;
a second valve located at the secondary side of the gas split ratio control unit; and
The control device is used for controlling the control device,
The control device performs the following control, namely:
When the substrate is to be processed, closing the second valve and opening the first valve, and controlling the supply of the gas to the gas supply pipe, the branching pipe, and the gas split ratio control unit located on the secondary side of the gas flow rate control device;
After detecting that the pressure of the gas supply pipe or the branch pipe on the secondary side of the gas flow rate control device reaches a set pressure by the pressure sensor, closing the control of the first valve; and
And a control for opening the first valve and the second valve and supplying the gas to the process container.
7. The substrate processing apparatus of claim 6, wherein:
The control device controls the gas flow rate ratio supplied to each of the plurality of branch pipes by variably controlling the conductance of each of the plurality of gas flow rate control units by the gas flow rate ratio control unit.
8. The substrate processing apparatus according to claim 6 or 7, wherein:
the plurality of branch pipes are respectively communicated with corresponding processing areas of the processing container,
The gas flowing through each of the branch pipes is supplied to the corresponding processing region.
9. The substrate processing apparatus of claim 8, wherein:
The gas comprises a main gas and an auxiliary gas,
The gas supply part has a main gas supply part and an auxiliary gas supply part,
The gas flow rate control device comprises a gas flow rate control device for main gas and a gas flow rate control device for auxiliary gas,
The gas supply pipe includes a main gas supply pipe through which the main gas flows and an auxiliary gas supply pipe through which the auxiliary gas flows,
The branch pipe includes a main gas branch pipe through which the main gas flows and an auxiliary gas branch pipe through which the auxiliary gas flows,
The secondary side of the second valve of the main gas branching pipe communicates with the secondary side of the second valve of the corresponding auxiliary gas branching pipe,
The assist gas is supplied to the main gas to generate two or more process gases, and the two or more process gases are supplied to the corresponding process regions of the process container, respectively.
10. The substrate processing apparatus of claim 9, wherein:
The control device detects that the pressure of the main gas supply pipe or the main gas branch pipe on the secondary side of the main gas flow rate control device reaches the set pressure, and the pressure of the auxiliary gas supply pipe or the auxiliary gas branch pipe on the secondary side of the auxiliary gas flow rate control device reaches the set pressure, and then executes control to close the first valves of both the main gas flow rate control device and the auxiliary gas flow rate control device, and then executes control to open the first valves of both the first valves and the second valves to generate the process gas.
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