CN112701212B - Thermoelectric temperature sensor - Google Patents
Thermoelectric temperature sensor Download PDFInfo
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- CN112701212B CN112701212B CN202011576899.3A CN202011576899A CN112701212B CN 112701212 B CN112701212 B CN 112701212B CN 202011576899 A CN202011576899 A CN 202011576899A CN 112701212 B CN112701212 B CN 112701212B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
Abstract
The invention discloses a thermoelectric temperature sensor, belonging to the technical field of sensors, which is characterized in that a thermoelectric device is made of a thermoelectric material with the temperature of more than 200 mu V/DEG C, and the P-N couple integration density of the thermoelectric device is not lower than 60 pairs of elements/cm 2 Each thermoelectric element realizes a full series structure through a conducting layer; ceramic plates arranged on the upper surface and the lower surface of the thermoelectric device; a hot end soaking plate bonded on the upper ceramic plate; a cold end soaking plate bonded on the lower ceramic plate; and the heat insulation structure is arranged on the side wall of the thermoelectric device. The technical scheme is that a thermoelectric material with a Seebeck coefficient of more than 200 mu V/DEG C is used for manufacturing a high-density thermoelectric device, soaking plates are designed at the cold end and the hot end of the device so as to ensure that the temperature of the end face of the device is uniform, and the side wall of the device is subjected to adiabatic protection; the cold end of the device is constantly the ambient temperature of the monitored object, the hot end is in close contact with the surface of the monitored object, and the temperature change of the designated surface is monitored by acquiring the output voltage value of the device in real time.
Description
Technical Field
The invention belongs to the technical field of sensors, and particularly relates to a thermoelectric temperature sensor.
Background
At present, temperature sensors working by using the thermoelectric seebeck effect principle generally have two modes: one is a temperature thermocouple made of two different metals or alloys (such as copper-constantan, nickel-chromium-nickel-silicon, tungsten-rhenium, platinum-rhodium, etc.), and the other is an infrared thermopile composed of two different semiconductor/metal material film layers (mostly silicon-aluminum, silicon-silicon) prepared by a microelectronic film coating process, and is commonly used for making ear thermometers and forehead thermometers. The two temperature sensors are only a pair of P-N couple pairs based on the Seebeck effect, the temperature detection range is 'point', and the Seebeck coefficient of the selected material is lower and is only dozens of microvolts/DEG C, so the test precision is lower and the sensitivity is lower.
Disclosure of Invention
The invention provides a thermoelectric temperature sensor for solving the technical problems in the prior art, which is used for improving the measurement precision and sensitivity of the temperature sensor.
The object of the invention is to provide a thermoelectric temperature sensor, at least comprising:
a thermoelectric device (6); the thermoelectric device (6) is made of a thermoelectric material with a temperature difference of more than 200 mu V/DEG C, and the P-N couple integration density of the thermoelectric device (6) is not lower than 60 pairs of elements/cm 2 Each thermoelectric element (3) realizes a full-series structure through the conducting layer (2);
ceramic plates (1) arranged on the upper and lower surfaces of the thermoelectric device (6);
a hot end vapor chamber (4) bonded to the upper ceramic plate;
a cold end soaking plate (7) bonded on the lower ceramic plate;
and the heat insulation structure (5) is arranged on the side wall of the thermoelectric device (6).
Preferably: the ceramic plate (1) is a gold-plated aluminum nitride ceramic plate.
Preferably: the thickness of the gold layer is 0.5-2 μm.
Preferably: the thickness of the ceramic plate (1) is 200-500 mu m.
Preferably: the hot-end soaking plate (4) and/or the cold-end soaking plate (7) are made of red copper.
Preferably: the thickness of the hot end soaking plate (4) and/or the cold end soaking plate (7) is 2-5 mm.
Preferably: the bonding temperature of the hot-end soaking plate (4) and/or the cold-end soaking plate (7) and the ceramic plate (1) is 240-360 ℃.
Preferably: the thermal insulation material of the thermal insulation structure (5) has the thermal conductivity of not more than 0.5W/mK, the height of 300 mu m and the wall thickness of 3 mm-8 mm.
Preferably: the upper surface of the lower surface of the hot-end soaking plate (4) is sequentially provided with a titanium layer and a tin layer, and the upper surface of the cold-end soaking plate (7) is sequentially provided with a titanium layer and a tin layer.
Preferably: the ratio of the thickness of the tin layer to the thickness of the gold layer on the surface of the ceramic is 0.2-0.8.
The invention has the advantages and positive effects that:
according to the technical scheme, a thermoelectric material with a Seebeck coefficient of more than 200 mu V/DEG C is used for manufacturing a high-density (more than or equal to 60 pairs of elements/cm & lt 2 & gt) thermoelectric device, vapor chambers are designed at the cold end and the hot end of the device so that the temperature of the end face of the device is uniform, and the side wall of the device is subjected to heat insulation protection; the cold end of the device is constantly the ambient temperature of the monitored object, the hot end is in close contact with the surface of the monitored object, and the temperature change of the specified surface is monitored by acquiring the output voltage value of the device in real time;
(1) The thermoelectric temperature sensor has higher sensitivity and precision, and the used thermoelectric device has the output characteristic of small temperature difference and large voltage, namely, the temperature of a monitored object can be expressed as obvious output voltage change of the device when slight change occurs in the temperature of the monitored object under the condition of constant environmental temperature.
(2) The temperature sensor can selectively adjust the structure of the thermoelectric device according to the area of the monitored surface, realize the surface temperature monitoring and effectively maintain the temperature uniformity of the monitored surface.
(3) The temperature sensor has the characteristic of real-time output electric energy, can utilize a secondary power supply to collect and store point energy, and realizes the productivity while sensitively monitoring the temperature.
Drawings
FIG. 1 is a schematic structural view of a thermoelectric device in a preferred embodiment of the present invention;
FIG. 2 is a block diagram of a preferred embodiment of the present invention;
wherein: 1. a ceramic plate; 2. a conductive layer; 3. a thermoelectric element; 4. a hot-end vapor chamber; 5. an insulating structure; 6. a thermoelectric device; 7. and a cold end soaking plate.
Detailed Description
In order to further understand the contents, features and effects of the present invention, the following embodiments are illustrated and described in detail with reference to the accompanying drawings:
in the description of the present invention, it is to be understood that the terms "upper", "lower", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention.
As shown in fig. 1 and 2:
a thermoelectric temperature sensor, comprising:
a thermoelectric device 6; the thermoelectric device 6 is made of a thermoelectric material with a temperature of more than 200 mu V/DEG C, and the P-N pair integration density of the thermoelectric device 6 is not lower than 60 pairs of elements/cm 2 Each thermoelectric element 3 realizes a full series structure through the conducting layer 2;
the ceramic plates 1 are arranged on the upper surface and the lower surface of the thermoelectric device 6;
a hot-end soaking plate 4 bonded to the upper ceramic plate;
a cold-end soaking plate 7 bonded to the lower ceramic plate;
and an adiabatic structure 5 provided at a sidewall of the thermoelectric device 6.
The thermoelectric temperature sensor in the preferred embodiment mainly comprises four parts of a thermoelectric device, a hot-end soaking plate, a cold-end soaking plate and a heat insulation structure; wherein:
the thermoelectric device 6 is made of a thermoelectric material with a temperature of 200 μ V/deg.C or higher, and has a P-N couple integration density of 60 pairs or more 2 Each thermoelectric element realizes a full series structure through a conducting layer;
the upper and lower surfaces of the thermoelectric device 6 are gold (Au) -plated aluminum nitride ceramic plates, the thickness of the Au layer is 0.5 μm to 2 μm, the thickness of the Au layer is preferably 0.5 μm or 1 μm or 2 μm, and the thickness of the ceramic plates is 200 μm to 500 μm; the preferred ceramic plate thickness of this embodiment is 200 μm or 500 μm;
the soaking plates (comprising the hot-end soaking plate 4 and the cold-end soaking plate 7) are made of red copper, the thickness is 2 mm-5 mm, the preferred thickness of the embodiment is 2mm or 5mm, and the length and width dimensions are consistent with the dimensions of the ceramic plate of the thermoelectric device;
sequentially manufacturing a metal titanium (Ti) layer and a tin (Sn) layer on the surface of the soaking plate which is in contact with the thermoelectric device 6 by adopting a sputtering or electron beam deposition method, wherein the thickness of the Ti layer is 0.5-2 mu m, the preferred thickness of the embodiment is 0.5-2 mu m, and the ratio of the thickness of the Sn layer to the thickness of the Au layer on the surface of the ceramic is 0.2-0.8; the ratio of the thickness of the Sn layer to the thickness of the Au layer on the ceramic surface is preferably 0.2 or 0.8;
the soaking plate and the cold and hot ends of the thermoelectric device are integrated in an Au-Sn bonding mode, and the bonding temperature is 240-360 ℃;
the heat insulation structure 5 is made of a heat insulation material with the heat conductivity not higher than 0.5W/mK and is of a hollow square frame structure, the height of the heat insulation structure is consistent with that of a thermoelectric element forming the thermoelectric device, and the area of an internally tangent square frame with the wall thickness of 3-8 mm is consistent with the maximum peripheral size of the thermoelectric device; preferred wall thicknesses are 3mm or 8mm;
the manufacturing process of the thermoelectric temperature sensor comprises the following steps:
selecting a thermoelectric device with the external dimension of 1cm multiplied by 1cm and containing 72 pairs of fully-serially-connected P-N elements, wherein the thermoelectric material selected by the thermoelectric device is P, N type bismuth telluride material, and the Seebeck coefficients are 223 mu V/DEG C and 218 mu V/DEG C respectively;
selecting an aluminum nitride ceramic plate with the thickness of 300 mu m and the thickness of an Au layer on the surface of the aluminum nitride ceramic plate of 1 mu m;
the thickness of the selected cold and hot end red copper soaking plates is 3mm, a Ti layer with the thickness of 1 micron and an Sn layer with the thickness of 0.5 micron are respectively manufactured on the surfaces of the cold and hot end red copper soaking plates, which are contacted with the cold and hot ends of the device, by adopting an electron beam deposition method, and the bonding temperature of the soaking plates and the end surfaces of the thermoelectric devices is 260 ℃;
the thermal insulation material selected for the thermal insulation structure has the thermal conductivity of 0.36W/mK, the height of 300 mu m and the wall thickness of 6mm.
The temperature sensor with the structure is used for carrying out temperature monitoring tests, and the output voltage of the sensor is 194.78mV when the hot face temperature is 54.8 ℃ under the condition that the cold end adiabatic constant is 27 ℃; when the temperature of the cold surface is unchanged and the temperature of the hot surface is 54.7 ℃, the output voltage of the sensor is 191.54mV. The output voltage value changes by 1.7 percent when the temperature changes by 0.1 degree, and the sensitivity is very high.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and all simple modifications, equivalent changes and modifications made to the above embodiment according to the technical spirit of the present invention are within the scope of the technical solution of the present invention.
Claims (1)
1. A thermoelectric temperature sensor, comprising at least:
a thermoelectric device (6); the thermoelectric device (6) is made of a thermoelectric material with the temperature of more than 200 mu V/DEG C, and the P-N pair integration density of the thermoelectric device (6) is not lower than 60 pairs of elements/cm 2 Each thermoelectric element (3) realizes a full-series structure through the conducting layer (2);
ceramic plates (1) arranged on the upper and lower surfaces of the thermoelectric device (6);
a hot end vapor chamber (4) bonded to the upper ceramic plate;
a cold end soaking plate (7) bonded on the lower ceramic plate;
the heat insulation structure (5) is arranged on the side wall of the thermoelectric device (6); wherein:
the ceramic plate (1) is a gold-plated aluminum nitride ceramic plate;
the thickness of the gold layer is 0.5-2 μm;
the thickness of the ceramic plate (1) is 200-500 mu m;
the hot-end soaking plate (4) and/or the cold-end soaking plate (7) are made of red copper;
the thickness of the hot-end soaking plate (4) and/or the cold-end soaking plate (7) is 2-5 mm;
the bonding temperature of the hot-end soaking plate (4) and/or the cold-end soaking plate (7) and the ceramic plate (1) is 240-360 ℃;
the thermal conductivity of the thermal insulation material of the thermal insulation structure (5) is not higher than 0.5W/mK, the height is 300 mu m, and the wall thickness is 3 mm-8 mm;
a titanium layer and a tin layer are sequentially manufactured on the upper surface of the lower surface of the hot-end soaking plate (4), and a titanium layer and a tin layer are sequentially manufactured on the upper surface of the cold-end soaking plate (7);
the ratio of the thickness of the tin layer to the thickness of the gold layer on the surface of the ceramic is 0.2-0.8;
the manufacturing process of the thermoelectric temperature sensor comprises the following steps:
selecting a thermoelectric device with the external dimension of 1cm multiplied by 1cm and containing 72 pairs of P-N elements which are all connected in series, wherein the thermoelectric material selected for the thermoelectric device is P, N type bismuth telluride material, and the Seebeck coefficients are 223 mu V/DEG C and 218 mu V/DEG C respectively;
selecting an aluminum nitride ceramic plate with the thickness of 300 mu m and the thickness of an Au layer on the surface of 1 mu m;
the thickness of the selected cold and hot end red copper soaking plates is 3mm, a Ti layer with the thickness of 1 micron and an Sn layer with the thickness of 0.5 micron are respectively manufactured on the surfaces of the cold and hot end red copper soaking plates, which are contacted with the cold and hot ends of the device, by adopting an electron beam deposition method, and the bonding temperature of the soaking plates and the end surfaces of the thermoelectric devices is 260 ℃;
the thermal conductivity of the thermal insulation material selected for the thermal insulation structure is 0.36W/mK, the height is 300 mu m, and the wall thickness is 6mm;
the temperature sensor with the structure is used for carrying out temperature monitoring tests, and the output voltage of the sensor is 194.78mV when the hot face temperature is 54.8 ℃ under the condition that the cold end adiabatic constant is 27 ℃; when the temperature of the cold surface is unchanged and the temperature of the hot surface is 54.7 ℃, the output voltage of the sensor is 191.54mV, the temperature is only changed by 0.1 ℃, and the output voltage value is changed by 1.7 percent.
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| CN202011576899.3A CN112701212B (en) | 2020-12-28 | 2020-12-28 | Thermoelectric temperature sensor |
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| CN202011576899.3A CN112701212B (en) | 2020-12-28 | 2020-12-28 | Thermoelectric temperature sensor |
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| CN112701212B true CN112701212B (en) | 2023-03-03 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1289039A (en) * | 2000-10-20 | 2001-03-28 | 西北大学 | Temperature difference sensor |
| JP2002368294A (en) * | 2001-06-11 | 2002-12-20 | Unitika Ltd | Thermoelectric conversion module for high temperature |
| CN102506515A (en) * | 2011-09-21 | 2012-06-20 | 中国电子科技集团公司第十八研究所 | Small-sized high-reliability thermoelectric refrigerator |
| CN105758058A (en) * | 2014-12-19 | 2016-07-13 | 中国电子科技集团公司第十八研究所 | High voltage intensive type thermoelectric refrigerator and preparation method thereof |
| CN111344874A (en) * | 2017-11-13 | 2020-06-26 | 株式会社朝日精细橡胶研究所 | Thermoelectric conversion device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4482667B2 (en) * | 2004-09-13 | 2010-06-16 | 独立行政法人産業技術総合研究所 | Wiring structure with cooling effect |
| CN102263196B (en) * | 2011-07-21 | 2013-02-13 | 华南理工大学 | Semiconductor thermoelectric power generation component |
| CN106787948B (en) * | 2015-11-23 | 2018-08-10 | 香河东方电子有限公司 | A kind of high temperature resistant Semiconductor Thermoelectric Generator and production method |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1289039A (en) * | 2000-10-20 | 2001-03-28 | 西北大学 | Temperature difference sensor |
| JP2002368294A (en) * | 2001-06-11 | 2002-12-20 | Unitika Ltd | Thermoelectric conversion module for high temperature |
| CN102506515A (en) * | 2011-09-21 | 2012-06-20 | 中国电子科技集团公司第十八研究所 | Small-sized high-reliability thermoelectric refrigerator |
| CN105758058A (en) * | 2014-12-19 | 2016-07-13 | 中国电子科技集团公司第十八研究所 | High voltage intensive type thermoelectric refrigerator and preparation method thereof |
| CN111344874A (en) * | 2017-11-13 | 2020-06-26 | 株式会社朝日精细橡胶研究所 | Thermoelectric conversion device |
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