CN112698433B - Super-material infrared absorber and manufacturing method thereof - Google Patents
Super-material infrared absorber and manufacturing method thereof Download PDFInfo
- Publication number
- CN112698433B CN112698433B CN202011584668.7A CN202011584668A CN112698433B CN 112698433 B CN112698433 B CN 112698433B CN 202011584668 A CN202011584668 A CN 202011584668A CN 112698433 B CN112698433 B CN 112698433B
- Authority
- CN
- China
- Prior art keywords
- metamaterial
- infrared absorber
- metal
- isolation layer
- wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/003—Light absorbing elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/008—Surface plasmon devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Filters (AREA)
Abstract
The invention provides a super-material infrared absorber and a manufacturing method thereof. The dielectric isolation layer is provided with metal structures which are periodically distributed at intervals. The metamaterial infrared absorber composed of the metal film layer, the medium isolation layer and the metal structure supports the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the metamaterial infrared absorber can absorb electromagnetic waves of a medium-wave infrared band and a long-wave infrared band simultaneously through the synergistic effect. The metamaterial infrared absorber composed of the metal film layer, the medium isolation layer and the metal structure supports the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the metamaterial infrared absorber can absorb electromagnetic waves in the medium-wave infrared band and the long-wave infrared band by utilizing the synergistic effect.
Description
Technical Field
The invention relates to the technical field of micro-nano optics, in particular to an infrared absorber made of a metamaterial and a manufacturing method thereof.
Background
At present, the photoelectric detector is not only an important component of semiconductor optoelectronics, but also plays an important role in the wide application fields of national defense, medical treatment, communication and the like, namely, the photoelectric detector belongs to a core technical device. The infrared detector belongs to one of photoelectric detectors, and can convert an incident infrared radiation signal into an electric signal to be output, so that the human visual ability is expanded, and the infrared detector can be applied to the fields of night vision, monitoring, disaster reduction, security protection, remote sensing and the like. Infrared detectors have undergone cell-to-multi, multi-to-focal plane development, with the current mainstream infrared detectors being focal plane detectors. In the atmospheric environment, infrared radiation of an object can only be effectively transmitted in three atmospheric windows of 1-2.5 μm (short wave infrared), 3-5 μm (medium wave infrared) and 8-14 μm (long wave infrared). However, due to the limitations of the infrared sensitive materials used and the device structure, infrared detectors typically operate in only one infrared band out of the three atmospheric windows described above, with limited information acquisition capability.
Disclosure of Invention
The invention provides an infrared absorber of a super material and a manufacturing method thereof, which can absorb electromagnetic waves of a middle wave infrared band and a long wave infrared band at the same time and simplify the structure.
In a first aspect, the present invention provides a metamaterial infrared absorber comprising a substrate, a metal film layer disposed on the substrate, and a dielectric isolation layer disposed on the metal film layer. The dielectric isolation layer is provided with metal structures which are periodically distributed at intervals, and each metal structure has C4 symmetry. And the metamaterial infrared absorber composed of the metal film layer, the medium isolation layer and the metal structure supports the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the metamaterial infrared absorber absorbs electromagnetic waves of the medium-wave infrared band and the long-wave infrared band through the synergistic effect.
In the scheme, the metamaterial infrared absorber composed of the metal film layer, the medium isolation layer and the metal structure supports the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the synergistic effect is utilized to enable the metamaterial infrared absorber to absorb electromagnetic waves of a medium-wave infrared band and electromagnetic waves of a long-wave infrared band. Meanwhile, the super-material infrared absorber is formed by sequentially laminating a metal film layer, a medium isolation layer and a metal structure, so that the structure is simplified, only the metal structure at the topmost layer needs to be subjected to microstructure manufacturing during processing, and the microstructure can be formed by one-time photoetching, so that the processing difficulty is reduced.
In a specific embodiment, the thickness of the dielectric isolation layer is set to a thickness such that the electromagnetic wave absorption rate of the metamaterial infrared absorber has absorption peaks in the middle-wave infrared band and the long-wave infrared band, respectively, so as to improve the electromagnetic wave absorption rates in the middle-wave infrared band and the long-wave infrared band.
In a specific embodiment, the set thickness is 0.6 μm to 0.8 μm to further improve the absorptivity of electromagnetic waves in the mid-wave infrared band and the long-wave infrared band.
In a specific embodiment, the material of the dielectric isolation layer is silicon, gallium antimonide or gallium arsenide, so that the dielectric isolation layer is grown on the metal film layer by selecting a semiconductor process which is easy to realize in the prior art, and therefore the dielectric isolation layer is not required to be bonded on the metal film layer, and the processing technology is simplified.
In a specific embodiment, the metal structure is a disk structure, a cross-shaped structure or a square structure, so that the formed super-material infrared absorber has polarization insensitivity, can be applied to the condition of incidence of various polarization states, and simultaneously has the characteristic of allowing incidence at a large angle.
In a specific embodiment, the metal structure is a disc structure, and the diameter of the disc structure is 0.6 μm to 0.7 μm, so that the absorption rate of the super-material infrared absorber to the electromagnetic wave in the long-wave infrared band is large as a whole under the condition that the absorption peak of the medium-wave infrared band is almost unchanged.
In a specific embodiment, the thickness of the disc structure is 10nm to 15nm to enhance the dual band absorption effect.
In a specific embodiment, the spacing between the centers of two adjacent disc structures is 1.0 μm-1.6 μm to improve the overall absorption rate of the medium-wave infrared and long-wave infrared dual-band.
In a specific embodiment, the thickness of the metal film layer is not less than 100nm, so that the thickness of the metal film layer is far greater than the skin depth of the electromagnetic wave in the infrared band in the metal film layer, and the transmission of light is completely prevented.
In one embodiment, the metal film layer and the metal structure are made of titanium, and the dielectric isolation layer is made of silicon, so that the absorption effect of the super-material infrared absorber is improved, and meanwhile, the integrated circuit CMOS compatible process is convenient to grow the metal film layer on the substrate, the dielectric isolation layer on the metal film layer and the metal structure on the dielectric isolation layer.
In a specific embodiment, the metal structures are periodically distributed on the dielectric spacer layer along a square lattice pattern.
In a specific embodiment, the metal structures are periodically distributed on the dielectric spacer layer in a hexagonal lattice fashion.
In a second aspect, the present invention also provides a method for manufacturing the above-mentioned infrared absorber of a metamaterial, the method comprising:
providing a substrate;
growing a metal film layer on the substrate;
growing a dielectric isolation layer on the metal film layer;
forming metal structures on the medium isolation layer, wherein the metal structures are periodically distributed at intervals, and each metal structure has C4 symmetry;
and the metamaterial infrared absorber composed of the metal film layer, the medium isolation layer and the metal structure supports the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the metamaterial infrared absorber absorbs electromagnetic waves of the medium-wave infrared band and the long-wave infrared band through the synergistic effect.
In the scheme, the metamaterial infrared absorber composed of the metal film layer, the medium isolation layer and the metal structure supports the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the synergistic effect is utilized to enable the metamaterial infrared absorber to absorb electromagnetic waves of a medium-wave infrared band and electromagnetic waves of a long-wave infrared band. Meanwhile, the super-material infrared absorber is formed by sequentially laminating a metal film layer, a medium isolation layer and a metal structure, the metal film layer and the medium isolation layer are respectively grown on the substrate by adopting an integrated circuit CMOS compatible process, the medium isolation layer is grown on the metal film layer, only the metal structure at the topmost layer needs to be subjected to microstructure manufacturing, and the microstructure can be formed by one-time photoetching, so that the processing difficulty is reduced.
Drawings
FIG. 1 is a perspective view of an infrared absorber of a metamaterial provided by an embodiment of the present invention;
FIG. 2 is a perspective view of an absorptive structure unit in an infrared absorber of a metamaterial according to an embodiment of the present invention;
FIG. 3 is a side view of the absorbent structure unit shown in FIG. 2;
FIG. 4 is a top view of the absorbent structure unit shown in FIG. 2;
FIG. 5 is a graph showing the wavelength-absorbance change versus time for a metal film layer with or without a dielectric isolation layer and a metal structure on top;
FIG. 6 is a graph showing a comparison of wavelength-absorbance changes for an infrared absorber of a metamaterial at thicker and thinner dielectric barrier layer thicknesses in accordance with an embodiment of the invention;
FIG. 7 is a graph showing a comparison of wavelength-absorbance changes at different dielectric spacer thicknesses in an infrared absorber of a metamaterial according to an embodiment of the present invention;
FIG. 8 is a graph showing a comparison of wavelength-absorbance changes of an infrared absorber of a metamaterial at different cycle densities in accordance with an embodiment of the present invention;
FIG. 9 is a graph showing a comparison of wavelength-absorbance changes of an infrared absorber of a metamaterial under a disc structure of different diameters according to an embodiment of the present invention;
FIG. 10 is a graph showing a comparison of wavelength-absorbance changes of an infrared absorber of a metamaterial with disc structures of different thicknesses according to an embodiment of the present invention;
FIG. 11 is a graph showing the comparison of wavelength-absorbance changes of an infrared absorber of a metamaterial in both TE and TM polarization states according to an embodiment of the present invention;
FIG. 12 is a graph showing a comparison of wavelength-absorbance changes at different angles of incidence for an infrared absorber of a metamaterial according to an embodiment of the present invention;
FIG. 13 is a graph showing a comparison of changes in wavelength-absorbance of a dielectric barrier layer of a super-material infrared absorber when composed of different materials, in accordance with an embodiment of the invention.
Reference numerals:
1-substrate 2-metal film layer 3-dielectric isolation layer 4-metal structure
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In order to facilitate understanding of the metamaterial infrared absorber provided by the embodiment of the invention, an application scene of the metamaterial infrared absorber provided by the embodiment of the invention is first described below, and the metamaterial infrared absorber can be applied to products such as an infrared detector, a radiation cooling device, a solar energy collecting device and the like as a structure for absorbing electromagnetic waves. The infrared absorber of the above-mentioned metamaterial will be described in detail with reference to the accompanying drawings.
Referring to fig. 1, 2, 3 and 4, an infrared absorber of the present invention includes a substrate 1, a metal film layer 2 disposed on the substrate 1, and a dielectric isolation layer 3 disposed on the metal film layer 2. The metal structures 4 are arranged on the dielectric isolation layer 3, the metal structures 4 are periodically distributed at intervals, and each metal structure 4 has C4 symmetry. And the metamaterial infrared absorber composed of the metal film layer 2, the medium isolation layer 3 and the metal structure 4 supports the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the metamaterial infrared absorber absorbs electromagnetic waves of the medium-wave infrared band and the long-wave infrared band through the synergistic effect.
In the scheme, the metamaterial infrared absorber consisting of the metal film layer 2, the medium isolation layer 3 and the metal structure 4 supports the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the metamaterial infrared absorber can absorb electromagnetic waves in the medium-wave infrared band and the long-wave infrared band by utilizing the synergistic effect. Meanwhile, the super-material infrared absorber is formed by sequentially stacking the metal film layer 2, the medium isolation layer 3 and the metal structure 4, so that the structure is simplified, only the metal structure 4 at the topmost layer needs to be subjected to microstructure manufacturing during processing, and the microstructure can be formed by one-time photoetching, so that the processing is easy, and the processing difficulty is reduced. The following describes each of the above structures in detail with reference to the accompanying drawings.
Referring to fig. 1, 2 and 3, when the substrate 1 is provided, the substrate 1 may be a hard flat substrate, and as a supporting structure, the material of the substrate 1 may be silicon, quartz glass or any other flat hard material. The metal film layer 2, the medium isolation layer 3 and the metal structure 4 are sequentially arranged on the substrate 1 from bottom to top, and the metal structures 4 are periodically distributed at intervals, namely, a metal-medium isolation layer-metal structure is formed. When the metal film layer 2 is specifically provided, the thickness t of the metal film layer 2 mirror May be not less than 100nm, specifically, t mirror The thickness of the metal film layer 2 can be any value which is not less than 100nm, such as 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, and the like, so that the thickness of the metal film layer 2 is far greater than the skin depth of electromagnetic waves in the infrared band in the metal film layer 2, and the transmission of light is completely prevented. The material of the metal film layer 2 can be titanium so as to improve the absorption effect of the super-material infrared absorber, and simultaneously, the metal film layer 2 is conveniently grown on the substrate 1 by adopting an integrated circuit CMOS compatible process. Of course, the metal film layer 2 may be made of other metal materials. When the material of the dielectric isolation layer 3 is specifically determined, the material of the dielectric isolation layer 3 may be silicon, gallium antimonide or gallium arsenide, so that the dielectric isolation layer 3 is grown on the metal film layer 2 by selecting a semiconductor process which is easy to be realized in the prior art, and therefore, the dielectric isolation layer 3 is not required to be bonded on the metal film layer 2, and the processing technology is simplified.
When the metal structure 4 is specifically arranged, the metal structure 4 has C4 symmetry, and specifically, the metal structure 4 can be a disc structure, a cross structure or a square structure, so that the formed metamaterial infrared absorber has polarization insensitivity, can be applied to the incident condition of various polarization states, and simultaneously has the characteristic of allowing large-angle incidence. The material of the metal structure 4 may be titanium, and at this time, the material of the dielectric isolation layer 3 may be silicon, so as to improve the absorption effect of the super-material infrared absorber, and at the same time, facilitate the growth of the metal structure 4 on the dielectric isolation layer 3 by using an integrated circuit CMOS compatible process. Of course, the metal structure 4 may be made of other metal materials. In particular arranging the metal structures 4, referring to fig. 1, the metal structures 4 may be periodically distributed on the dielectric isolation layer 3 in a square lattice manner, that is, 4 metal structures 4 are adjacent around each metal structure 4. The metal structures 4 may also be periodically distributed on the dielectric spacer layer 3 in a hexagonal lattice manner, i.e. 6 metal structures 4 are adjacent around each metal structure 4.
There are absorbers in the prior art in which only a metallic titanium film is provided on the substrate 1, without the dielectric barrier layer 3 and the metallic structure 4. As shown in fig. 5, the absorption rate of the absorber consisting of only one metal film layer 2 in the mid-wave infrared band and the long-wave infrared band is schematically shown. It should be noted that the mid-wave infrared band means a band having a wavelength of 3 μm to 5 μm, and the long-wave infrared band means a band having a wavelength of 8 μm to 14 μm. As can be seen from FIG. 5, the absorption rate of the whole absorber in the wavelength range of 2 μm to 15 μm is 40% or less. Wherein the absorption rate in the mid-wave infrared band (3 μm to 5 μm) is about 10 to 35%. The absorption of the long-wave infrared band wave (8 μm to 14 μm) is lower, below 5%, and the longer the wavelength, the closer the absorption is to 0 (as shown by the solid curve in fig. 5).
With continued reference to fig. 5, by adding a dielectric isolation layer 3 with a set thickness above the metal film layer 2 and adding a metal structure 4 with a proper size above the dielectric isolation layer 3, when the metamaterial infrared absorber is formed, the absorption rate of two important infrared window bands of medium-wave infrared and long-wave infrared can be improved to more than 80% (as shown by a circled curve in fig. 5) by utilizing the synergistic effect of a fabry-perot cavity mode, a propagation surface plasmon mode and a local surface plasmon resonance mode supported by the metal-dielectric-metal integral structure. Therefore, compared with the absorber which is composed of only one metal film layer 2 in the prior art, the metamaterial infrared absorber disclosed by the application has a good absorption effect in the middle-wave infrared band and the long-wave infrared band.
In addition, the thickness of the dielectric isolation layer 3 is t d Is an important parameter affecting the performance of infrared absorbers of metamaterials and requires optimization to determine specific values. The thickness of the dielectric isolation layer 3 can be adjusted to ensure that the metamaterial composed of the metal film layer 2, the dielectric isolation layer 3 and the metal structure 4 absorbs infraredThe absorber supports the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the metamaterial infrared absorber absorbs electromagnetic waves of the middle-wave infrared band and the long-wave infrared band through the synergistic effect. Specifically, the thickness of the dielectric isolation layer 3 may be set to a thickness such that the electromagnetic wave absorption rate of the metamaterial infrared absorber has absorption peaks in the mid-wave infrared band and the long-wave infrared band, respectively, so as to improve the electromagnetic wave absorption rates in the mid-wave infrared band and the long-wave infrared band. Wherein, the electromagnetic wave absorptivity of the super material infrared absorber has absorption peaks in both the middle-wave infrared band and the long-wave infrared band distribution, which means that: the metamaterial infrared absorber may have not less than 1 absorption peak in the mid-wave infrared band, 1, 2, 3, etc., and the metamaterial infrared absorber may have not less than 1 absorption peak in the long-wave infrared band, 1, 2, 3, etc.
Shown in fig. 6 is a graph of the change in absorbance versus wavelength of the infrared absorber of the meta-material at thicker and thinner dielectric barrier layers 3. As can be seen from FIG. 6, compared with the change in the absorption rate of the absorber composed of only the metal film layer 2 (no-mark curve in FIG. 6), the metamaterial infrared absorber disclosed in the present application has obvious absorption peaks in the wavelength band of 2 μm to 15 μm when the metamaterial infrared absorber is thicker in the dielectric isolation layer 3 or thinner in the dielectric isolation layer 3. However, the thickness of the dielectric barrier layer 3 varies, which varies the absorption rate of the infrared absorber of the metamaterial. When the dielectric separation layer 3 is relatively thin (corresponding to t d =0.2 μm, square mark solid line), only one absorption peak can be generated in the mid-wave infrared band range of 3 μm to 5 μm. Although the absorption band has a large bandwidth, absorption peaks cannot be generated in the long-wave infrared band of 8 μm to 14 μm. When the dielectric separation layer 3 is relatively thick (corresponding to t d =0.7 μm, triangle mark solid line), although the absorption band bandwidth is narrowed in the range of the mid-wave infrared band of 3 μm to 5 μm, another wider absorption peak appears in the range of the long-wave infrared band of 8 μm to 14 μm, and the effect of the dual-band absorption is preliminarily achieved. Since these newly generated absorption peak wavelengths red shift with increasing thickness of the dielectric separation layer 3,these absorption peaks therefore contribute to the fabry-perot cavity resonance mode corresponding to the structured dielectric separation layer 3.
When the thickness of the dielectric isolation layer 3 is specifically determined, the set thickness may be 0.6 μm to 0.8 μm, and specifically, the set thickness may be any value between 0.6 μm, 0.7 μm, 0.8 μm, etc. between 0.6 μm and 0.8 μm, so that the infrared absorber of the metamaterial has one absorption peak in the mid-wave infrared band and two absorption peaks in the long-wave infrared band, so as to further improve the absorption rates of electromagnetic waves in the mid-wave infrared band and the long-wave infrared band. Referring to fig. 7, when the thickness of the medium barrier layer 3 is 0.4 μm and 0.5 μm, and the thickness of the medium layer is 0.9 μm and 1.0 μm, the absorption rate of the super-material infrared absorber in the mid-wave infrared band has one absorption peak, and the absorption rate in the long-wave infrared band has only one absorption peak. When the thickness of the medium isolation layer 3 is 0.6 μm, 0.7 μm or 0.8 μm, the absorption rate of the super-material infrared absorber in the middle wave infrared band is also provided with one absorption peak, but the absorption rate of the super-material infrared absorber in the long wave infrared band is provided with two absorption peaks, so that the whole absorption rate of the super-material infrared absorber is larger, and the absorption effect is better.
In addition, the degree of densification of the metallic structure 4 periodically distributed on the dielectric barrier layer 3 also affects the absorption rate of the infrared absorber of the metamaterial. While the spacing between adjacent metal structures 4 determines the degree of densification of the periodic distribution of the metal structures 4. The following is an example of an arrangement in which the gold microstructures 4 are disk structures. When the spacing between the two disc structures is specifically determined, the spacing between the centers of the two adjacent disc structures may be 1.0 μm to 1.6 μm, and specifically, the spacing between the centers of the two adjacent disc structures may be any value between 1.0 μm, 1.1 μm, 1.2 μm, 1.3 μm, 1.4 μm, 1.5 μm, 1.6 μm, etc. between 1.0 μm and 1.6 μm, so that the absorption rate of the metamaterial infrared absorber in the mid-wave infrared band has one absorption peak, and the absorption rate in the long-wave infrared band has two absorption peaks, so as to improve the overall absorption rate of the mid-wave infrared and long-wave infrared dual bands.
Referring to fig. 1 and 8, it is assumed that a pitch Px between centers of two disk structures adjacent in the x-direction is equal to a pitch Px between centers of two disk structures adjacent in the y-direction, that is, p=px=py, and a plurality of disk structures are periodically distributed on the dielectric isolation layer 3 in a square lattice manner. As shown in fig. 8, when the interval between the centers of two adjacent disk structures is 1.0 μm, 1.1 μm, 1.2 μm, 1.3 μm, 1.4 μm, 1.5 μm, 1.6 μm, the absorption rate of the super-material infrared absorber in the mid-wave infrared band has one absorption peak, and the absorption rate in the long-wave infrared band has two absorption peaks, so as to improve the overall absorption rate of the mid-wave infrared and long-wave infrared dual bands. With the period increasing (i.e. the periodic distribution of the metal structure 4 is sparse), the absorption peak of the mid-wave infrared band is hardly affected, the two absorption peaks of the long-wave infrared band are gradually closed, the corresponding absorption bandwidth is gradually narrowed, and the line type of the absorption spectrum is also changed to a certain extent. Since the change in period P with a fixed diameter of the disk structure mainly affects the edge spacing of the disk structures, i.e. the degree of coupling between the disk structures. Thus, as the period P increases gradually, the edge spacing between the disk structures increases gradually, so that the coupling between the disk structures becomes weaker and weaker, so that the two absorption peaks come closer together, the absorption bandwidth becomes narrower, and the overall absorption rate within the bandwidth increases. Thus, if only absorption close to 100% in a narrower band range (e.g. 9 μm to 12 μm) is sought, a slightly larger period may be chosen, such as p=1.4 μm or p=1.6 μm. However, from the standpoint of the maximum overall absorption rate of the both medium-wave infrared and long-wave infrared bands, by integrating the area under the curve of the absorption characteristic curve in the ranges of 3 μm to 5 μm and 8 μm to 14 μm, quantitative evaluation data of the overall absorption effect (as indicated by the numbers on the right of each curve) can be obtained, and it can be determined that p=1.1 μm is the optimal period.
In addition, the diameter of the metallic structure 4 also affects the overall absorption effect of the infrared absorber of the metamaterial. When the metal structure 4 is a disc structure, the diameter of the disc structure may be 0.6 μm to 0.7 μm, specifically, the diameter of the disc structure may be any value between 0.6 μm and 0.7 μm, such as 0.6 μm and 0.7 μm, so that the absorption rate of the metamaterial infrared absorber in the mid-wave infrared band has one absorption peak, and the absorption rate of the metamaterial infrared absorber in the long-wave infrared band has two absorption peaks, that is, the absorption peak in the mid-wave infrared band is almost unchanged, and the absorption rate of the metamaterial infrared absorber on electromagnetic waves in the long-wave infrared band is large as a whole. Referring to fig. 9, in the case where the period is fixed to p=1.1 μm, as the diameter D of the disk structure becomes larger from smaller, the absorption peak of the mid-wave infrared band becomes almost unchanged, and the absorption peak of the long-wave infrared band becomes more apparent while the line type also changes accordingly. When the diameter of the disc structure is 0.6 mu m and 0.7 mu m, the absorption rate of the super-material infrared absorber in the middle wave infrared band has one absorption peak, and the absorption rate of the super-material infrared absorber in the long wave infrared band has two absorption peaks, namely, the absorption peak of the super-material infrared absorber in the middle wave infrared band is almost unchanged, so that the whole absorption rate of the super-material infrared absorber to electromagnetic waves in the long wave infrared band is larger. Similar to fig. 8, quantitative comparison was performed by area integration under the curve, so that it was possible to pick out that the effect of the dual-band absorption was optimal at the disk diameter d=0.7 μm.
In addition, the thickness of the disc structure also affects the overall absorption effect of the metamaterial infrared absorber, when the thickness of the disc structure is determined, the thickness of the disc structure is 10 nm-15 nm, and the thickness of the disc structure can be any value between 10nm and 15nm, such as 10nm, 11nm, 12nm, 13nm, 14nm, 15nm and the like, so that the metamaterial infrared absorber has one absorption peak in the absorption rate of the medium-wave infrared band, and has two absorption peaks in the absorption rate of the long-wave infrared band, and the effect of dual-band absorption is improved. Referring to fig. 10, as the thickness of the metal structure 4 of the top layer increases, the absorption peak of the mid-wave infrared band is almost unchanged (i.e., the absorption rate of the mid-wave infrared band is independent of the thickness of the metal structure 4 of the top layer), while the absorption characteristics of the long-wave infrared band are changed more significantly. When the thickness of the disc structure is 10nm and 15nm, the absorption rate of the metamaterial infrared absorber in the medium-wave infrared band has one absorption peak, and the absorption rate of the metamaterial infrared absorber in the long-wave infrared band has two absorption peaks, so that the dual-band absorption effect is improved. Similar to FIG. 8, the quantitative comparison is performed by area integration under the curve, so that the thickness t of the metal at the top layer can be selected m When=10 nm, the dual-band absorptionThe effect of (2) is optimal.
The infrared absorber using the above-described metamaterial has the following excellent characteristics in addition to the above-described case of having the dual-band, broadband absorption characteristics:
(1) The metamaterial infrared perfect absorber provided by the embodiment of the invention has polarization insensitivity, namely, the infrared absorption characteristic of incident light waves with different polarizations is kept unchanged. As shown in fig. 11, in the normal incidence condition, no matter whether the transverse electric wave (TE) or the transverse magnetic wave (TM) is incident, the absorption characteristic curves of the metamaterial infrared absorber in the embodiment of the invention completely coincide, which illustrates that the metamaterial infrared absorber designed in the embodiment of the invention can be applied to the case of both TE and TM polarization at the same time. Since any polarization state can be obtained by superposition of TE and TM polarization states, the infrared absorber designed by the embodiment of the invention can keep the absorption characteristic unchanged under various polarization states including linear polarized light, circular polarized light, elliptical polarized light and unpolarized light in any direction, and thus has polarization insensitivity.
(2) The metamaterial infrared perfect absorber provided by the embodiment of the invention also has the characteristic of wide incident angle. The black non-mark solid line in fig. 12 shows the case at normal incidence (corresponding to the incident angle θ=0°), and when the incident angle gradually increases to deviate from normal incidence, the absorption characteristics of the infrared absorber also gradually change. As the incident angle increases gradually, the absorption rate of the mid-wave infrared band increases and then decreases, and the absorption rate of the long-wave infrared band decreases gradually. Similarly, quantitative comparisons were made by area integration under the curve. In the range of theta less than or equal to 50 degrees, the overall performance of the device is reduced by not more than 2 percent compared with the optimal condition (theta=20 degrees), and meanwhile, the minimum absorptivity of the device in the medium-wave infrared and long-wave infrared bands is kept above 80 percent. When the incident angle theta is increased to 80 degrees, the overall performance of the device is reduced to 83% of the optimal performance, but the minimum absorptivity of the device in the medium-wave infrared and long-wave infrared bands can still reach more than 60%. Therefore, the metamaterial infrared perfect absorber provided by the embodiment of the invention has excellent wide incident angle characteristic.
(3) The dielectric barrier layer 3 of the super-material infrared absorber of the present embodiments may employ a variety of alternative materials to achieve the same or similar dual-band high efficiency absorption effect. For example, in addition to silicon (Si), two alternative materials, gallium antimonide (GaSb) or gallium arsenide (GaAs), may also be used to produce dual band absorption in the infrared band. As shown in FIG. 13, by optimizing the structural geometry, the above three devices can achieve absorption efficiencies of at least 80% in the 3 μm to 5 μm and 8 μm to 14 μm bands. By adopting the method of area integration under the curve for quantitative comparison, the integral value difference between different materials is only about 0.1, and the performance difference is not more than 2.5%. Therefore, the super-material infrared absorber structure in the embodiment of the invention is not limited to one material, but has a relatively wide material selection surface.
The metamaterial infrared absorber composed of the metal film layer 2, the medium isolation layer 3 and the metal structure 4 supports the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the metamaterial infrared absorber can absorb electromagnetic waves in the middle wave infrared band and electromagnetic waves in the long wave infrared band by utilizing the synergistic effect. Meanwhile, the super-material infrared absorber is formed by sequentially stacking the metal film layer 2, the medium isolation layer 3 and the metal structure 4, so that the structure is simplified, only the metal structure 4 at the topmost layer needs to be subjected to microstructure manufacturing during processing, and the microstructure can be formed by one-time photoetching, so that the processing is easy, and the processing difficulty is reduced.
In addition, the embodiment of the invention also provides a manufacturing method of the metamaterial infrared absorber, and referring to fig. 1, 2, 3 and 4, the manufacturing method comprises the following steps:
providing a substrate 1;
growing a metal film layer 2 on the substrate 1;
growing a medium isolation layer 3 on the metal film layer 2;
forming metal structures 4 on the dielectric isolation layer 3, wherein the metal structures 4 are periodically distributed at intervals, and each metal structure 4 has C4 symmetry;
and the metamaterial infrared absorber composed of the metal film layer 2, the medium isolation layer 3 and the metal structure 4 supports the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the metamaterial infrared absorber absorbs electromagnetic waves of the medium-wave infrared band and the long-wave infrared band through the synergistic effect.
In the scheme, the metamaterial infrared absorber consisting of the metal film layer 2, the medium isolation layer 3 and the metal structure 4 supports the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the metamaterial infrared absorber can absorb electromagnetic waves in the medium-wave infrared band and the long-wave infrared band by utilizing the synergistic effect. Meanwhile, the super-material infrared absorber is formed by sequentially stacking a metal film layer 2, a medium isolation layer 3 and a metal structure 4, the metal film layer 2 and the medium isolation layer 3 are respectively formed by growing the metal film layer 2 on the substrate 1 by adopting an integrated circuit CMOS compatible process, the medium isolation layer 3 is grown on the metal film layer 2, only the metal structure 4 at the topmost layer needs to be subjected to microstructure manufacturing, and the microstructure can be formed by one-time photoetching, so that the processing is easy, and the processing difficulty is reduced.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present invention should be included in the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.
Claims (4)
1. A metamaterial infrared absorber, comprising:
a substrate;
a metal film layer disposed on the substrate;
a dielectric isolation layer disposed on the metal film layer;
the metal structures are arranged on the medium isolation layer, are periodically distributed at intervals, and each metal structure has C4 symmetry;
the metamaterial infrared absorber composed of the metal film layer, the medium isolation layer and the metal structure supports the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the metamaterial infrared absorber absorbs electromagnetic waves of a medium-wave infrared band and a long-wave infrared band through the synergistic effect;
the thickness of the medium isolation layer is set to be a set thickness, so that the electromagnetic wave absorptivity of the metamaterial infrared absorber has absorption peaks in the middle-wave infrared band and the long-wave infrared band respectively; the set thickness is 0.6-0.8 mu m;
the metal structure is a disc structure, the diameter of the disc structure is 0.6-0.7 mu m, the thickness of the disc structure is 10-15 nm, and the distance between the centers of two adjacent disc structures is 1.0-1.6 mu m.
2. The infrared absorber of claim 1, wherein the material of the dielectric spacer layer is silicon, gallium antimonide or gallium arsenide.
3. The infrared absorber of claim 1, wherein the metal film layer has a thickness of not less than 100nm.
4. A method of manufacturing the infrared absorber of claim 1, comprising:
providing a substrate;
growing a metal film layer on the substrate;
growing a dielectric isolation layer on the metal film layer;
forming metal structures on the medium isolation layer, wherein the metal structures are periodically distributed at intervals, and each metal structure has C4 symmetry;
the metamaterial infrared absorber composed of the metal film layer, the medium isolation layer and the metal structure supports the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the metamaterial infrared absorber absorbs electromagnetic waves of a medium-wave infrared band and a long-wave infrared band through the synergistic effect;
the thickness of the medium isolation layer is set to be a set thickness, so that the electromagnetic wave absorptivity of the metamaterial infrared absorber has absorption peaks in the middle-wave infrared band and the long-wave infrared band respectively; the set thickness is 0.6-0.8 mu m;
the metal structure is a disc structure, the diameter of the disc structure is 0.6-0.7 mu m, the thickness of the disc structure is 10-15 nm, and the distance between the centers of two adjacent disc structures is 1.0-1.6 mu m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011584668.7A CN112698433B (en) | 2020-12-28 | 2020-12-28 | Super-material infrared absorber and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011584668.7A CN112698433B (en) | 2020-12-28 | 2020-12-28 | Super-material infrared absorber and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112698433A CN112698433A (en) | 2021-04-23 |
| CN112698433B true CN112698433B (en) | 2023-06-23 |
Family
ID=75511386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011584668.7A Active CN112698433B (en) | 2020-12-28 | 2020-12-28 | Super-material infrared absorber and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112698433B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111308588B (en) * | 2020-03-23 | 2022-03-25 | 中北大学 | Multi-band perfect absorber based on surface plasmons |
| CN112326045B (en) * | 2020-10-30 | 2021-12-17 | 北京理工大学 | Infrared scene conversion chip with double-scale superstructure |
| JP2023000572A (en) * | 2021-06-18 | 2023-01-04 | 兵庫県公立大学法人 | Electromagnetic wave absorber |
| CN114545537B (en) * | 2022-02-16 | 2024-02-13 | 华南师范大学 | Metamaterial near-infrared broadband absorber and preparation method thereof |
| CN115061227A (en) * | 2022-07-05 | 2022-09-16 | 成都市精鹰光电技术有限责任公司 | Metamaterial electromagnetic wave absorber with polarization selection in long-wave infrared band |
| CN114895394B (en) * | 2022-07-15 | 2022-09-30 | 华侨大学 | Sub-wavelength grating structure with wide-band optical energy storage characteristic and preparation method thereof |
| CN116953828B (en) * | 2023-09-12 | 2024-03-12 | 之江实验室 | Multiband absorber and design method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103308486A (en) * | 2013-05-23 | 2013-09-18 | 中国科学院长春光学精密机械与物理研究所 | Surface-plasma-based infrared photon absorption device of composite resonator |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019018039A2 (en) * | 2017-04-20 | 2019-01-24 | The Trustees Of Dartmouth College | Nanophotonic hot-electron devices for infrared light detection |
| CN109813448B (en) * | 2019-01-31 | 2021-11-05 | 中国科学院长春光学精密机械与物理研究所 | Double-spectrum super-surface integrated uncooled infrared detector and manufacturing method thereof |
| CN109799556A (en) * | 2019-03-11 | 2019-05-24 | 浙江科技学院 | Polarization independent wideband absorber based on doped silicon grating array |
| CN110737034A (en) * | 2019-10-14 | 2020-01-31 | 上海海事大学 | infrared broadband wave-absorbing structure for radiation refrigeration and design method thereof |
-
2020
- 2020-12-28 CN CN202011584668.7A patent/CN112698433B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103308486A (en) * | 2013-05-23 | 2013-09-18 | 中国科学院长春光学精密机械与物理研究所 | Surface-plasma-based infrared photon absorption device of composite resonator |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112698433A (en) | 2021-04-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112698433B (en) | Super-material infrared absorber and manufacturing method thereof | |
| He et al. | Multi-band terahertz absorber at 0.1–1 THz frequency based on ultra-thin metamaterial | |
| CN111338011B (en) | Method for realizing ultra-wideband light absorption enhancement by adopting composite microstructure | |
| CN112292014B (en) | Microwave transmission passband adjustable high-transmittance optical window based on phase-change material and graphene | |
| US8452134B1 (en) | Frequency selective infrared sensors | |
| CN109193174B (en) | Metamaterial-based unidirectional non-reciprocal wave absorber and production method thereof | |
| JP2015062066A (en) | Optical metapolarizer device | |
| CN111443505B (en) | Method and system for constructing deep sub-wavelength size non-reciprocal emitting/absorbing device | |
| CN112072323B (en) | Terahertz switch based on metal and vanadium dioxide | |
| CN110687622B (en) | Polarization-adjustable spectrum dual-difference-response perfect optical wave absorber and preparation method thereof | |
| EP2631707A1 (en) | Responsivity enhancement of solar light compositions and devices for thermochromic windows | |
| CN103675961A (en) | Intermediate infrared double-frequency-band metamaterial absorber based on double-L structure | |
| JP6060462B2 (en) | Optronics window that transmits IR and reflects RF | |
| Ye et al. | Low-loss one-dimensional metallodielectric photonic crystals fabricated by metallic insertions in a multilayer dielectric structure | |
| CN109324361B (en) | Ultra-wide waveband near-perfect absorber and manufacturing method thereof | |
| CN110703371B (en) | Semiconductor super-surface electromagnetic wave absorber and preparation method thereof | |
| US12013287B2 (en) | Infrared absorption and detection enhancement using plasmonics | |
| CN100489597C (en) | One-dimensional metal photon dielectric crystal and its design method and application | |
| CN107402418B (en) | Infrared broadband absorber based on multilayer grating structure | |
| CN115826110A (en) | Intermediate infrared detection structure and multiband adjustable wave-absorbing structure | |
| CN113219566A (en) | Polarization sensitive broadband response long-wave infrared metamaterial absorber | |
| CN111308587A (en) | Tunable multiband ultra-narrow band electromagnetic wave absorber | |
| CN113948876A (en) | Demetallized dynamic thermally-adjustable three-narrow-band terahertz perfect wave absorber | |
| CN114200559A (en) | Ultra-wideband visible light and near-infrared metamaterial wave absorber | |
| CN109545179B (en) | Ultra-wideband near-perfect optical absorber based on refractory material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |