CN112326045B - Infrared scene conversion chip with double-scale superstructure - Google Patents
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/38—Radiation pyrometry, e.g. infrared or optical thermometry using extension or expansion of solids or fluids
- G01J5/44—Radiation pyrometry, e.g. infrared or optical thermometry using extension or expansion of solids or fluids using change of resonant frequency, e.g. of piezoelectric crystals
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
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Abstract
The invention relates to an infrared scene conversion chip with a dual-scale superstructure, and belongs to the technical field of infrared. The invention discloses an infrared scene conversion chip with a dual-scale superstructure, which consists of a writing light high-absorption super-structural layer and an infrared band high-radiation super-structural layer. The writing light high-absorption superstructure layer is stacked above the infrared band high-radiation superstructure layer; the write-in optical band absorber superstructure is uniformly distributed on the large-size infrared band radiation superstructure top-layer unit cell, and the unit sizes of the write-in optical band absorber superstructure and the write-in optical band radiation superstructure are different in order of magnitude, so that the write-in optical band absorber superstructure and the write-in optical band radiation superstructure are not influenced by each other, and high absorption of the write-in optical band and high emission of the infrared band can be realized simultaneously. The invention can realize specific wave band writing and specific wave band radiation. Meanwhile, due to the periodic characteristics of the working units, each working unit can be regarded as a pixel, and infrared scene conversion is achieved.
Description
Technical Field
The invention relates to an infrared scene conversion chip with a dual-scale superstructure, and belongs to the technical field of infrared.
Background
The infrared scene generator is used for generating dynamic infrared scenes, and can comprehensively test the detection performance of the infrared imaging detection equipment under the condition of a laboratory in the development and use processes of the infrared imaging detection equipment, so that the development cost and the development period are greatly reduced. The infrared scene generation chip is a key device in the infrared scene generator. Currently, commonly used infrared scene generation chips include microlens arrays (wangtiefei, chengyou, fountan. infrared light field relay imaging system [ J ] infrared and laser engineering based on the micro scene arrays, volume 49, stage 7), silicon-based liquid crystals (Liyuhua, Zhu camphor, silicon-based liquid crystal (LCoS) micro display technology [ J ]. micro-nano electronic and intelligent manufacturing, 2020,2(02):73-79.), resistor arrays (gaohui, Zhao Qing, Shuugui, Chenhai swallow, Zhao Xishuai, infrared scene generation technology [ J ]. aviation bulletin, 2015,36(09):2815 and 2827.) and thin film type conversion chips (Beijing Physician university, Beijing Kingsheng micro-nano technology Limited company; suspended thin film type visible light image to infrared image conversion chips: 201110206822.1[ P ]. 2012-02-15). The micro lens array and the silicon-based liquid crystal are modulation type devices, and the resistor array and the thin film type conversion chip are heat radiation devices. The radiant device has the broad-spectrum radiation characteristic of a black body, and thus is widely used.
However, due to the gray body characteristic of the heat radiation device, when the temperature of the chip increases, not only the energy is radiated in the detection band but also the radiation is performed in the entire spectral band, resulting in a limitation in the effective radiation efficiency. In recent years, the metamaterial technology is developed vigorously, and the microstructure of the radiation type infrared scene generation chip is designed, so that the radiation type infrared scene generation chip can obtain flat high absorption and high emission in a specific waveband, and the energy conversion efficiency of the chip is improved.
Disclosure of Invention
The invention aims to solve the problem that the effective radiation efficiency of the existing infrared scene conversion chip is limited, and provides an infrared scene conversion chip with a double-scale superstructure; the chip has high absorption in a writing light waveband by adopting two superstructures with different scales, and has high radiation in a working waveband, so that the conversion from absorbed light to radiated light is realized efficiently. Meanwhile, each large-sized cell structure can be regarded as one pixel, thanks to the periodicity of the superstructure. When the writing light field has a spatial distribution, the radiation fields of the picture elements will have the same spatial distribution, thereby enabling a transition from a writing light scene to an infrared radiation scene.
The purpose of the invention is realized by the following technical scheme.
An infrared scene conversion chip with a dual-scale superstructure is composed of a writing light high-absorption super-structural layer and an infrared band high-radiation super-structural layer. The write light high absorption superstructure layer is stacked above the infrared band high radiation superstructure layer (as shown in fig. 4); the write-in optical band absorber superstructure is uniformly distributed on the large-size infrared band radiation superstructure top-layer unit cell, and the unit sizes of the write-in optical band absorber superstructure and the write-in optical band radiation superstructure are different in order of magnitude, so that the write-in optical band absorber superstructure and the write-in optical band radiation superstructure are not influenced by each other, and high absorption of the write-in optical band and high emission of the infrared band can be realized simultaneously.
The writing light field is a writing light scene with spatial intensity distribution, different temperature distributions can be formed due to different writing light intensities absorbed by each pixel, infrared radiation with different intensities is generated, and conversion from the writing light scene to the infrared scene is achieved.
The working mode is as follows: the chip is fixed on a heat sink substrate with a certain temperature, and the written light field is imaged to the chip by an optical system; the writing light high-absorption metamaterial layer of the chip absorbs the writing light field, and the temperature of the chip is raised; when the chip temperature is higher than the ambient temperature, radiation will be generated; the infrared band high-radiation superstructure has flat high emissivity only in the working band, and has very low emissivity in other bands, so that the radiation energy is limited in the limited working bandwidth for radiation; and further realizing scene generation in the infrared working band. (as in FIG. 1)
The writing light high-absorption super-structure layer is of a three-layer sandwich structure, and a sub-wavelength structural unit is formed by metal-medium-metal from top to bottom. The design combines a plasmon principle and a magnetic resonance principle, and realizes the broadband flat high absorption of writing light through impedance matching and resonance absorption. In order to realize the regulation and control of writing light, the unit size of the writing light high-absorption superstructure is in the order of the wavelength of the writing light.
The infrared band high-radiation superstructure comprises a bottom part and a top part, wherein the bottom part is of a metal-medium-metal sandwich structure, and the top part is of a metal unit cell. In order to realize the regulation and control of the radiation field, the unit size of the infrared band high-radiation superstructure is the wavelength magnitude of infrared radiation light.
In the metal-medium-metal structure, the metal material is determined by the required working waveband, and the upper metal and the lower metal can be the same or different in type;
the medium includes: silicon dioxide;
the infrared band high-radiation super-structure layer realizes temperature control through a temperature control substrate;
advantageous effects
1. The infrared scene conversion chip with the double-scale superstructure can realize specific wave band writing and specific wave band radiation. Meanwhile, due to the periodic characteristics of the working units, each working unit can be regarded as a pixel, and infrared scene conversion is achieved.
2. According to the infrared scene conversion chip with the double-scale superstructure, the working wave band can be changed by changing the structural size of the working unit, and the infrared scene conversion of different wave bands is realized.
Drawings
FIG. 1 is a schematic front view of the working principle of the present invention;
FIG. 2 is a schematic front view of a basic unit of a visible light absorber according to the present invention;
FIG. 3 is a schematic front view of a basic unit of an infrared band absorber according to the present invention;
FIG. 4 is a schematic perspective view of a base unit of a dual band absorber of the present invention;
FIG. 5(a) shows the absorption spectra of the present invention at different incident angles in the visible wavelength band, and FIG. 5(b) shows the absorption spectra of the present invention at different incident angles in the infrared wavelength band;
FIG. 6(a) is a diagram showing the magnetic field distribution when the visible light band absorber of the present invention is irradiated with light, and FIG. 6(b) is a diagram showing the magnetic field distribution when the infrared band absorber of the present invention is irradiated with light;
fig. 7 is a schematic view of the radiation distribution (temperature distribution) when the present invention is in operation.
The device comprises a writing light absorption layer 1, an infrared light radiation layer 2, a temperature control substrate 3, a visible light absorber upper layer metal 4, a visible light absorber middle medium 5, a visible light absorber metal bottom layer 6, an infrared band absorber top layer metal unit cell 7, an infrared band absorber upper layer metal 8, an infrared band absorber middle medium 9 and an infrared band absorber metal bottom layer 10.
Detailed Description
The present invention will be further described with reference to the following examples.
Example 1
In the examples, the write light band was set to 400nm to 1000nm, and the infrared radiation band was set to 7.7 to 9.5 μm (a general band for long-wave infrared refrigeration image forming apparatuses).
As shown in fig. 1, an infrared scene conversion chip with a dual-scale superstructure is composed of three parts: the top 1 is a writing optical super-structure layer; the middle 2 is an infrared band super-structural layer; the bottom layer 3 is a temperature-controlled substrate.
As shown in fig. 2, the writing optical super structure layer includes: an upper metal layer 1, a middle dielectric layer 2 and a bottom metal substrate 3. The upper metal layer 1, the middle dielectric layer 2 and the bottom metal substrate 3 form a metal-dielectric-metal sub-wavelength structural unit, and the period of the metal-dielectric-metal sub-wavelength structural unit is 250 nm.
Preferably, the upper metal layer 1 is made of titanium, the cross section of the upper metal layer is square, the side length of the square is 190nm, and the thickness of the square is 20 nm.
Preferably, the material of the middle dielectric layer 2 is silicon dioxide, the refractive index is 1.45, the side length is 190nm, and the thickness is 80 nm.
Preferably, the lower metal layer 3 is made of aluminum, and has a side length of 250nm and a thickness of 200 nm.
Referring to fig. 3, the infrared band super-structure layer includes: a top metal unit cell 4 and a bottom metal-dielectric layer-metal interlayer. Wherein the bottom metal interlayer comprises: an upper metal layer 5, an intermediate dielectric layer 6 and a bottom metal substrate 7. The bottom interlayer forms a metal-dielectric-metal sub-wavelength structural unit, and the period of the metal-dielectric-metal sub-wavelength structural unit is 3.1 mu m.
Preferably, the material of the top layer metal unit cell 4 is titanium metal, the cross section is square, the side length of the square is 2.1 μm, and the height is 1.9 μm.
Preferably, the upper metal layer 5 is made of titanium metal, the cross section of the upper metal layer is square, the side length of the square is 3.1 μm, and the thickness of the square is 5 nm.
Preferably, the intermediate dielectric layer 6 is made of silicon dioxide, the cross section of the intermediate dielectric layer is square, the side length of the square is 3.1 μm, and the thickness of the square is 0.1 μm.
Preferably, the bottom metal substrate 7 is made of titanium metal, and has a square cross section, the side length of the square is 3.1 μm, and the thickness is 0.1 μm.
Referring to fig. 5(a), when electromagnetic simulation calculation is performed on the wavelength band of 350nm to 1200nm in the embodiment, when the incident angle is 0 °, the absorption rate can reach more than 95% in the wavelength band of 400nm to 1000nm, wherein the absorption rate of the wavelength band of 804nm to 921nm exceeds 99%, the emission peak is at 886nm, and the absorption peak is 99.8%; in the incident light wave band of 400nm to 1000nm, the absorption rate of the metamaterial absorber changes along with the increase of the incident angle. At an incident angle of 40 °, the absorption decreased slightly by about 4%. It follows that the written light absorbing structure can always maintain high absorption over a large range of angles of incidence.
Further, referring to fig. 6(a), the metal-dielectric-metal sub-wavelength structural unit interacts with incident light to generate a magnetic resonance effect, so as to generate magnetic resonance in the dielectric layer, thereby achieving absorption.
Referring to fig. 5(b), electromagnetic simulation calculation is performed on the embodiment in the wavelength band from 7.5 μm to 14 μm, and the result is: when the radiation angle is 0 degrees, the emissivity in a wave band from 7.7 mu m to 9.5 mu m is more than 90 percent, and the emissivity at the wavelength of 8.75 mu m is the highest and is 99.1 percent; the emission peaks at different radiation angles are all at a wavelength of 9 μm; in the 7.7 μm to 9.5 μm band, the emissivity drops by about 10% compared to 0 ° when the radiation angle is 60 °. Therefore, the embodiment can realize high-efficiency radiation with a large angle in the infrared working band.
Further, referring to fig. 6(b), the metal-dielectric-metal sub-wavelength structural unit interacts with the infrared band light wave to generate a magnetic resonance effect, and generates a magnetic resonance in the dielectric layer, so as to realize strong absorption and high emission of the infrared band light wave.
Further, referring to fig. 7, a 3 × 3 basic unit array is selected to illuminate the middle single unit, so that the middle single unit enters a working state, the temperature distribution of the middle single unit is as shown in the figure, which shows that crosstalk of absorption and radiation to adjacent pixels is small, and each infrared period unit can be used as one pixel, thereby realizing scene generation.
In the above embodiments, the present invention has been described only exemplarily. The superstructure is an exemplary structure, and the invention protects superstructures having the same and similar operating principles.
The above detailed description is intended to illustrate the objects, aspects and advantages of the present invention, and it should be understood that the above detailed description is only exemplary of the present invention and is not intended to limit the scope of the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (8)
1. An infrared scene conversion chip with two scale superstructure which characterized in that: the chip consists of a writing light high-absorption super-structure layer, an infrared band high-radiation super-structure layer and a temperature control substrate; the writing light high-absorption superstructure layer is stacked above the infrared band high-radiation superstructure layer; the write-in optical band absorber superstructure is uniformly distributed on the large-size infrared band radiation superstructure top-layer unit cell, and the unit sizes of the write-in optical band absorber superstructure and the write-in optical band radiation superstructure are different in order of magnitude, so that the write-in optical band absorber superstructure and the write-in optical band radiation superstructure are not influenced by each other, and high absorption of the write-in optical band and high emission of the infrared band can be realized simultaneously.
2. The infrared scene conversion chip with the dual-scale superstructure of claim 1, wherein: the chip has the characteristic of periodic arrangement of units, each periodic unit can be used as a pixel, when a written light field is a written light scene with spatial intensity distribution, different temperature distributions can be formed due to different intensities of the written light absorbed by each pixel, infrared radiation with different intensities is generated, and conversion from the written light scene to the infrared scene is achieved.
3. The method for realizing infrared scene conversion by adopting the chip as claimed in claim 1, wherein: the written light field is imaged to the chip by the optical system; the writing light high-absorption metamaterial layer of the chip absorbs the writing light field, and the temperature of the chip is raised; when the chip temperature is higher than the ambient temperature, radiation will be generated; the infrared band high-radiation superstructure has flat high emissivity only in the working band, and has very low emissivity in other bands, so that the radiation energy is limited in the limited working bandwidth for radiation; and further realizing scene generation in the infrared working band.
4. The infrared scene conversion chip with the dual-scale superstructure of claim 1, wherein: the writing light high-absorption super-structure layer is of a three-layer sandwich structure and is a metal-medium-metal structure unit from top to bottom; the design combines a plasmon principle and a magnetic resonance principle, and realizes the broadband flat high absorption of writing light through impedance matching and resonance absorption; in order to realize the regulation and control of writing light, the unit size of the writing light high-absorption superstructure is in the order of the wavelength of the writing light.
5. The infrared scene conversion chip with the dual-scale superstructure of claim 1, wherein: the infrared band high-radiation superstructure is composed of a bottom part and a top part, wherein the bottom part is of a metal-medium-metal sandwich structure, and the top part is of a metal unit cell; in order to realize the regulation and control of the radiation field, the unit size of the infrared band high-radiation superstructure is the wavelength magnitude of infrared radiation light.
6. An infrared scene conversion chip with a dual-scale superstructure according to claim 4 or 5, characterized in that: in the metal-medium-metal structures at the bottoms of the writing light high-absorption superstructure and the infrared band high-radiation superstructure, the metal material is determined by the required working band, and the upper metal and the lower metal can be the same in type or different in type.
7. An infrared scene conversion chip with a dual-scale superstructure according to claim 4 or 5, characterized in that: the writing light high-absorption superstructure layer and the medium in the metal-medium-metal structure at the bottom of the infrared band high-radiation superstructure comprise: silicon dioxide.
8. The infrared scene conversion chip with the dual-scale superstructure of claim 1, wherein: the infrared band high-radiation super-structure layer realizes temperature control through the temperature control substrate.
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| US7247850B2 (en) * | 2005-08-05 | 2007-07-24 | Her Majesty The Queen In Right Of Canada, As Represented By The Minister Of National Defence Of Her Majesty's Canadian Government | Infrared imager |
| CN102520334A (en) * | 2011-12-20 | 2012-06-27 | 北京理工大学 | Fiber array dynamic infrared scene generation apparatus based on MEMS technology |
| US20170261377A1 (en) * | 2012-03-28 | 2017-09-14 | United States Of America, As Represented By The Secretary Of The Navy | Bi-material terahertz sensor and terahertz emitter using metamaterial structures |
| CN102856663B (en) * | 2012-08-24 | 2014-07-23 | 电子科技大学 | Metamaterial, broadband and infrared wave-absorbing structural material |
| CN103115686A (en) * | 2013-01-28 | 2013-05-22 | 上海科润光电技术有限公司 | Long-wave infrared light detecting device |
| CN104792413A (en) * | 2015-03-25 | 2015-07-22 | 北京光电技术研究所 | Laser power meter |
| CN105372848B (en) * | 2015-11-27 | 2019-03-26 | 北京振兴计量测试研究所 | A kind of infrared micro- radiating curtain |
| US9952097B1 (en) * | 2016-10-25 | 2018-04-24 | Institut National D'optique | Infrared scene projector and conversion chip therefore |
| CN112698433B (en) * | 2020-12-28 | 2023-06-23 | 中国科学院微电子研究所 | Super-material infrared absorber and manufacturing method thereof |
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