CN112689609A - 一种黑磷相超薄铋纳米片改性的复合膜及其制备方法 - Google Patents

一种黑磷相超薄铋纳米片改性的复合膜及其制备方法 Download PDF

Info

Publication number
CN112689609A
CN112689609A CN201880096143.3A CN201880096143A CN112689609A CN 112689609 A CN112689609 A CN 112689609A CN 201880096143 A CN201880096143 A CN 201880096143A CN 112689609 A CN112689609 A CN 112689609A
Authority
CN
China
Prior art keywords
film
bismuth
black phosphorus
phosphorus phase
composite film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201880096143.3A
Other languages
English (en)
Inventor
王干
陈俊树
何洪涛
叶飞
梅佳伟
周良
王琳晶
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Southwest University of Science and Technology
Southern University of Science and Technology
Original Assignee
Southwest University of Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Southwest University of Science and Technology filed Critical Southwest University of Science and Technology
Publication of CN112689609A publication Critical patent/CN112689609A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

一种黑磷相超薄铋纳米片改性的复合膜及其制备方法。所述复合膜包括基体膜及插层在基体膜中的黑磷相铋纳米片。实现了黑磷相铋二维材料的大量合成及对材料物性调控的应用，为工业界利用黑磷相铋材料对磁性、半导体等材料进行物性调控提供可行的路线，拓展铋金属的应用领域。

Description

PCT国内申请，说明书已公开。

Claims (20)

  1. PCT国内申请，权利要求书已公开。
CN201880096143.3A 2018-10-23 2018-10-23 一种黑磷相超薄铋纳米片改性的复合膜及其制备方法 Pending CN112689609A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2018/111346 WO2020082223A1 (zh) 2018-10-23 2018-10-23 一种黑磷相超薄铋纳米片改性的复合膜及其制备方法

Publications (1)

Publication Number Publication Date
CN112689609A true CN112689609A (zh) 2021-04-20

Family

ID=70330815

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880096143.3A Pending CN112689609A (zh) 2018-10-23 2018-10-23 一种黑磷相超薄铋纳米片改性的复合膜及其制备方法

Country Status (2)

Country Link
CN (1) CN112689609A (zh)
WO (1) WO2020082223A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112941627B (zh) * 2021-01-29 2023-10-13 中南大学 一种垂直生长的超薄Cr2Te3单晶纳米片的制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009079777A1 (en) * 2007-12-21 2009-07-02 The University Of British Columbia Gallium arsenide semiconductor material incorporating bismuth and process for epitaxial growth
CN102623132A (zh) * 2012-03-30 2012-08-01 海南大学 利用表面活化剂提高各向异性磁电阻灵敏度的方法
CN103526297A (zh) * 2013-10-17 2014-01-22 西南交通大学 一种制备拓扑绝缘体Bi2Se3薄膜的方法
CN104051610A (zh) * 2013-03-15 2014-09-17 三星电子株式会社 具有***层的磁性结和使用该磁性结的磁存储器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009079777A1 (en) * 2007-12-21 2009-07-02 The University Of British Columbia Gallium arsenide semiconductor material incorporating bismuth and process for epitaxial growth
CN102623132A (zh) * 2012-03-30 2012-08-01 海南大学 利用表面活化剂提高各向异性磁电阻灵敏度的方法
CN104051610A (zh) * 2013-03-15 2014-09-17 三星电子株式会社 具有***层的磁性结和使用该磁性结的磁存储器
CN103526297A (zh) * 2013-10-17 2014-01-22 西南交通大学 一种制备拓扑绝缘体Bi2Se3薄膜的方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SHIN YAGINUMA等: "Electronic Structure of Ultrathin Bismuth Films with A7 and Black-Phosphorus-like Structures", JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, vol. 77, no. 1, pages 1 - 5 *

Also Published As

Publication number Publication date
WO2020082223A1 (zh) 2020-04-30

Similar Documents

Publication Publication Date Title
Lee et al. Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates
Wang et al. Atomically smooth ultrathin films of topological insulator Sb 2 Te 3
Schumann et al. Molecular beam epitaxy of Cd3As2 on a III-V substrate
Ryu et al. Superlattices based on van der Waals 2D materials
Chen et al. Molecular beam epitaxial growth of topological insulators
US8946692B2 (en) Graphene (multilayer) boron nitride heteroepitaxy for electronic device applications
Guo et al. A roadmap for controlled production of topological insulator nanostructures and thin films
Wang et al. Growth of two-dimensional materials on hexagonal boron nitride (h-BN)
Rajan et al. Morphology control of epitaxial monolayer transition metal dichalcogenides
Chen et al. In situ high temperature atomic level dynamics of large inversion domain formations in monolayer MoS 2
Ryu et al. Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth
Ngabonziza Quantum transport and potential of topological states for thermoelectricity in Bi2Te3 thin films
CN106521619A (zh) 一种具有高自旋极化电子通道的拓扑绝缘体复合薄膜及其制备
Zhang et al. Synthesis, properties, and stacking of two-dimensional transition metal dichalcogenides
Li et al. Controllable preparation of 2D vertical van der Waals heterostructures and superlattices for functional applications
Kessel et al. CdTe-HgTe core-shell nanowire growth controlled by RHEED
Lu et al. Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene/silicon carbide
Zhang et al. Synthesis and electromagnetic transport of large-area 2D WTe2 thin film
KR100623271B1 (ko) 갈륨망간나이트라이드 단결정 나노선의 제조방법
CN112689609A (zh) 一种黑磷相超薄铋纳米片改性的复合膜及其制备方法
US20230212402A1 (en) Two dimensional silicon carbide materials and fabrication methods thereof
Waseem et al. Cu2O heterostructured GaN thin film and GaN nanowire piezoelectric nanogenerators
CN112968121B (zh) 一种硒化铋超晶格结构及其制备
Giulian et al. Ion irradiation-induced foams in antimonide binary alloys: A combination of small energy bandgap with giant surface-to-bulk ratio
WO2020142898A1 (zh) 一种可调控的磁性斯格明子材料及其制备方法和用途

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination