CN112688665B - Broadband digital attenuator based on GaN HEMT device - Google Patents
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Abstract
The invention discloses a broadband digital attenuator based on a GaN HEMT device, which belongs to the technical field of microwave monolithic integrated circuits and microelectronics, and comprises a 16dB attenuation unit, an 8dB attenuation unit, a 2dB attenuation unit, a 1dB attenuation unit, a 0.5dB attenuation unit and a 4dB attenuation unit which are sequentially cascaded, wherein the 0.5dB attenuation unit, the 1dB attenuation unit and the 2dB attenuation unit are all T-shaped topological structures, the 4dB attenuation unit is a pi-shaped topological structure, the 16dB attenuation unit is a switch-type topological structure, and the 8dB attenuation unit is an optimized pi-shaped topological structure. According to the invention, the six attenuation units are cascaded to form the conveniently used broadband digital attenuator, so that the attenuation precision of the attenuator is improved, and the insertion loss is reduced.
Description
Technical Field
The invention relates to the technical field of Microwave Monolithic Integrated Circuits (MMICs) and microelectronics, in particular to a broadband digital attenuator based on a GaN HEMT device.
Background
The number of attenuation units of the main-stream GaAs monolithic digital attenuator is 5-6 bits, the minimum attenuation step is 0.5dB, and the size is small.
GaN has a wider band gap, a higher breakdown field, and a higher electron saturation velocity than most semiconductor materials. Gallium nitride high electron mobility transistors (GaN HEMTs) have become the mainstream of high frequency, high power, high voltage devices, and their power capability is an order of magnitude higher than that of GaAs transistors.
In 2000, alekseev et al, michigan, university, michigan, first reported a GaN MMIC attenuator. The one-bit digital attenuator comprises 3 GaN HEMT devices with the grid width of 100 mu m, adopts a pi-type attenuator structure, adopts coplanar waveguide, and controls the voltage to be 0V/-15V. The test result shows that the insertion loss is 4dB and the attenuation dynamic range is about 30dB in the DC-18 GHz working frequency.
However, the GaN MMIC attenuator with stronger power endurance capability reported in the prior publication has the following problems: the number of attenuation units is only one, the attenuation step is large, the attenuation precision is low, the insertion loss is large, and the requirements of radar, communication, navigation and other systems cannot be met.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a broadband digital attenuator based on a GaN HEMT device, and the attenuation precision of the attenuator is improved and the insertion loss is reduced by adopting an optimized pi-type topological structure, a simplified T-type topological structure, a pi-type topological structure and a switch-type topological structure.
In order to achieve the above object, an embodiment of the present application provides a broadband digital attenuator based on a GaN HEMT device, including a 16dB attenuation unit, an 8dB attenuation unit, a 2dB attenuation unit, a 1dB attenuation unit, a 0.5dB attenuation unit, and a 4dB attenuation unit that are sequentially cascaded, where the 0.5dB attenuation unit, the 1dB attenuation unit, and the 2dB attenuation unit are all T-type topologies, the 4dB attenuation unit is a pi-type topology, the 16dB attenuation unit is a switch-type topology, and the 8dB attenuation unit is an optimized pi-type topology;
the optimized pi-type topological structure comprises: pi-type topological structure and microstrip line TL 1 Capacitor C 1 HEMT switch M 4 And an isolation resistor R g4 The radio frequency input end of the pi-type topological structure is used as the radio frequency input end of the optimized pi-type topological structure, and the output end of the pi-type topological structure is connected with the microstrip line TL 1 The microstrip line TL 1 The other end of the capacitor is connected in series with the capacitor C 1 Rear connection of the HEMT switch M 4 The HEMT switch M 4 Is connected with the isolation resistor R g4 One terminal of the HEMT switch M 4 The source of (3) is grounded, the isolation resistor R g4 The other end of the microstrip line TL is used for inputting control voltage of the same direction end 1 And the other end of the antenna is used as a radio frequency output end of the optimized pi-type topological structure.
According to the broadband digital attenuator based on the GaN HEMT device, provided by the embodiment of the invention, the 0.5dB attenuation unit, the 1dB attenuation unit, the 2dB attenuation unit, the 4dB attenuation unit, the 8dB attenuation unit and the 16dB attenuation unit are integrated on one chip by adopting different topological structures, so that the attenuation precision is improved, and the insertion loss is reduced.
Optionally, the 0.5dB attenuation unit and the 1dB attenuation unit are simplified T-type topology structures;
the simplified T-topology comprises: damping resistor R 2 HEMT switch M 5 And an isolation resistor R g5 The HEMT switch M 5 And the attenuation resistor R 2 Connected in series and then grounded, the HEMT switch M 5 The grid electrode is externally connected with an isolation resistor R g5 Of said isolation resistor R g5 The other end of the HEMT switch is used for inputting a control voltage of the same direction end, and the HEMT switch M 5 The drain electrodes of the two-way capacitors are respectively used as the simplified T-type topological structure radio frequency input end and the simplified T-type topological structure radio frequency output end.
Optionally, the T-type topology includes the simplified T-type topology and an attenuation resistor R 4 Attenuation resistor R 5 Isolation resistor R g7 And HEMT switch M 7 ；
The HEMT switch M 7 The grid electrode is externally connected with an isolation resistor R g7 Of said isolation resistor R g7 The other end of the HEMT switch is used for inputting a reverse end control voltage, and the HEMT switch M 7 And the attenuation resistor R 4 One end of the HEMT switch M is connected and then used as the radio frequency input end of the T-shaped topological structure, and the HEMT switch M 7 And the attenuation resistor R 5 One end of the T-shaped topological structure is connected and then used as the radio frequency output end of the T-shaped topological structure, and the attenuation resistor R 4 The other end and an attenuation resistor R 5 Is connected with the simplified T-type topology HEMT switch M 6 Is connected to the drain of (1).
Optionally, the switching topology includes eight HEMT switches with gates externally connected with isolation resistors, and a microstrip line TL 2 Open line TLO 1 Open line TLO 2 Damping resistor R 6 Attenuation resistor R 7 And a damping resistor R 8 (ii) a The HEMT switches of the eight grid electrodes externally connected with the isolation resistors are HEMT switches M 8 Isolation resistor R g8 HEMT switch M 9 Isolation resistor R g9 HEMT switch M 10 Isolation resistor R g 10. HEMT switch M 11 Isolation resistor R g11 HEMT switch M 12 Isolation resistor R g 12. HEMT switch M 13 And an isolation resistor R g13 HEMT switch M 14 Isolation resistor R g14 HEMT switch M 15 And an isolation resistor R g15 ；
The HEMT switch M 9 And the HEMT switch M 10 The source electrode of the HEMT is connected and then used as the radio frequency input end of the switch type topological structure, and the HEMT switch M 13 And the HEMT switch M 14 The source electrodes are connected and then are used as the radio frequency output end of the switch type topological structure;
the HEMT switch M 9 Is connected to the microstrip line TL 2 The microstrip line TL 2 Is connected with the HEMT switch M at the other end 13 A drain electrode of (1); the HEMT switch M 9 And the HEMT switch M 8 The drain of the HEMT switch M 8 The source of (2) is grounded; the HEMT switch M 13 And the HEMT switch M 12 The drain of the HEMT switch M 12 The source of (2) is grounded; the microstrip line TL 2 Are respectively connected with the open line TLO 1 And said open line TLO 2 ；
The HEMT switch M 10 Is connected to the attenuation resistor R 6 Of the attenuation resistor R 6 Is connected with the HEMT switch M at the other end 14 A drain electrode of (1); the HEMT switch M 10 Is connected with the HEMT switch M 11 The HEMT switch M 11 The source of (2) is grounded; the HEMT switch M 14 Is connected to the HEMT switch M 15 The HEMT switch M 15 The source of (2) is grounded; the attenuation resistor R 6 Are respectively connected with the attenuation resistor R 7 And the attenuation resistor R 8 The damping resistor R, the damping resistor R 7 And the attenuation resistor R 8 The other ends of the two are respectively grounded;
the isolation resistor R g8 And an isolation resistor R g10 Isolation resistor R g12 And an isolation resistor R g14 One end of the HEMT switch is respectively connected with the HEMT switch M 8 HEMT switch M 10 HEMT switch M 12 And HEMT switch M 14 The isolation resistor R g8 Isolation resistor R g10 And an isolation resistor R g12 And an isolation resistor R g14 The other end of the voltage transformer is used for inputting a control voltage of a same-direction end;
the isolation resistor R g9 And an isolation resistor R g11 And an isolation resistor R g13 And an isolation resistor R g15 One end of the HEMT switch is respectively connected with the HEMT switch M 9 HEMT switch M 11 HEMT switch M 13 And HEMT switch M 15 The gate of the isolation resistor R g9 And an isolation resistor R g11 And an isolation resistor R g13 And an isolation resistor R g15 And the other end of the first switch is used for inputting a control voltage of the reverse end.
Optionally, the pi-type topology includes a HEMT switch M 16 HEMT switch M 17 HEMT switch M 18 Isolation resistor R g16 And an isolation resistor R g17 Isolation resistor R g18 Damping resistance R 9 Attenuation resistor R 10 Attenuation resistor R 11 ；
The HEMT switch M 16 And the HEMT switch M 17 The drain electrode of the HEMT is connected with the HEMT switch M and then used as the radio frequency input end of the pi-type topological structure 17 Through the attenuation resistor R 9 Grounding; the HEMT switch M 16 And the HEMT switch M 18 The drain electrode of the HEMT is connected and then used as the radio frequency output end of the pi-type topological structure, and the HEMT switch M 18 Through the attenuating resistor R 10 Grounding; the attenuation resistor R 11 Are respectively connected with the HEMT switch M 17 And HEMT switch M 18 Is connected with the drain electrode of the transistor;
the HEMT switch M 16 And the isolation resistor R g16 Is connected to one end of the isolation resistor R g16 The other end of (1) is used for inputting inverseControlling the voltage to the terminal; the HEMT switch M 17 And the isolation resistor R g17 Is connected to one end of the isolation resistor R g17 The other end of the first switch is used for inputting a equidirectional control voltage; the HEMT switch M 18 And the isolation resistor R g18 Is connected to the isolation resistor R g18 And the other end of the input end is used for inputting a control voltage of the same-direction end.
Optionally, the 16dB attenuation unit, the 8dB attenuation unit, the 2dB attenuation unit, the 1dB attenuation unit, the 0.5dB attenuation unit, and the 4dB attenuation unit are respectively connected to a parallel driver, and all the parallel drivers are drivers with the same structure; the output voltage end of each parallel driver is respectively connected with the control voltage ports of the 16dB attenuation unit, the 8dB attenuation unit, the 2dB attenuation unit, the 1dB attenuation unit, the 0.5dB attenuation unit and the 4dB attenuation unit, and the power ports of all the parallel drivers are mutually connected.
Optionally, the parallel driver is a GaN one-bit parallel driver, and the GaN one-bit parallel driver includes: an input protection and level conversion circuit, a second level conversion circuit, a first inverter circuit, a second inverter circuit and a third inverter circuit;
the input port of the input protection and level conversion circuit is used as the input port of the GaN one-bit parallel driver, the output end of the input protection and level conversion circuit is connected with the input ends of the first inverter circuit and the second inverter circuit, and the output end of the second inverter circuit is used as the reverse output voltage port of the GaN one-bit parallel driver; the output end of the first phase inverter is connected with the input end of the second level conversion, the output end of the second level conversion is connected with the input end of the third inverter, and the output end of the third phase inverter is used as a homodromous output voltage port of the GaN one-bit parallel driver.
Optionally, the input protection and level conversion circuit is formed by connecting at least one diode in series; and the anode end of the formed diode string is used as the input port of the GaN one-bit parallel driver, and the cathode end of the diode string is connected with the input ports of the first inverter circuit and the second inverter circuit.
Optionally, the first inverter circuit includes: field effect transistor T 1 Field effect transistor T 4 And a voltage dividing resistor R 13 And a voltage dividing resistor R 14 And power port V EE ；
The field effect transistor T 1 As an input port of the first inverter circuit, the field effect transistor T 1 And the voltage dividing resistor R 13 Is connected with one end of the voltage dividing resistor R 13 And the other end of the field effect transistor T 4 Of the field effect transistor T, the field effect transistor T 1 And said field effect transistor T 4 Of the field effect transistor T 4 The drain of (2) is grounded; the field effect transistor T 1 The grid of the voltage divider resistor R 14 With the power supply port V of the GaN one-bit parallel driver EE Connecting;
the second level shift circuit includes: diode D1, diode D2, field effect transistor T 7 And a voltage dividing resistor R 16 And power port V EE ；
The field effect transistor T 1 And said field effect transistor T 4 Is connected as an input port of the second level shifter circuit, the field effect transistor T 1 And said field effect transistor T 4 Is connected with the diode D in series 1 And D 2 Of the series-connected diodes D 1 And D 2 And said field effect transistor T 7 Of the field effect transistor T, the field effect transistor T 7 And the divider resistor R 16 Is connected to one terminal of the field effect transistor T 7 And the divider resistor R 16 Is connected with the power supply port V of the GaN one-bit parallel driver EE Connecting;
the third inverter circuit includes: field effect transistor T 5 Field effect transistor T 6 And a voltage dividing resistor R 15 ；
The series-connected diode D 1 And D 2 And said field effect transistor T 7 As an input port of the third inverter circuit, the series-connected diode D 1 And D 2 And said field effect transistor T 7 Is connected to the field effect transistor T 6 Of said field effect transistor T 6 And the voltage dividing resistor R 15 Is connected with one end of the voltage dividing resistor R 15 And the other end of the field effect transistor T 5 Of the field effect transistor T, the field effect transistor T 5 Is grounded, the field effect transistor T 6 And said field effect transistor T 5 The grid of the GaN one-bit parallel driver is connected with the same-direction output voltage port of the GaN one-bit parallel driver after being connected;
the second inverter circuit includes: field effect transistor T 2 Field effect transistor T 3 And a voltage dividing resistor R 12 ；
The field effect transistor T 2 As an input port of the second inverter circuit, the field effect transistor T 2 Is connected to the field effect transistor T 1 Of the field effect transistor T 2 And said field effect transistor T 1 Of the field effect transistor T, the field effect transistor T 2 And the voltage dividing resistor R 12 Is connected with one end of the voltage dividing resistor R 12 And the other end of the field effect transistor T 3 Of the field effect transistor T, the field effect transistor T 3 Is grounded, the field effect transistor T 3 And the field effect transistor T 2 The drain electrode of the GaN one-bit parallel driver is connected with the reverse output voltage port of the GaN one-bit parallel driver;
the field effect transistor T 1 Source electrode of, said field effect transistor T 2 Source electrode of and field effect transistor T 6 Source electrode of the GaN one-bit parallel driver is connected with a power supply port V of the GaN one-bit parallel driver SS Connecting;
the output end of the input protection and level conversion circuit and the field effect transistor T 1 And said field effect transistor T 2 Is connected to the gate of (a).
Optionally, the 16dB attenuation unit, the 8dB attenuation unit, the 2dB attenuation unit, the 1dB attenuation unit, the 0.5dB attenuation unit, the 4dB attenuation unit, and the six parallel drivers are integrated on the same chip.
According to the embodiment of the invention, the 16dB attenuation unit, the 8dB attenuation unit, the 2dB attenuation unit, the 1dB attenuation unit, the 0.5dB attenuation unit and the 4dB attenuation unit are sequentially cascaded, and different topology structures are selected by different attenuation units according to the attenuation precision and the insertion loss, so that the broadband digital attenuator with six attenuation units is integrated, the attenuation precision is improved, and the insertion loss is reduced.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a functional block diagram of a broadband digital attenuator based on a GaN HEMT device according to an embodiment of the present invention;
FIG. 2 is a diagram of an optimized pi topology structure provided by an embodiment of the present invention;
FIG. 3 is a simplified T-topology block diagram provided by an embodiment of the present invention;
FIG. 4 is a T-topology structure diagram provided by an embodiment of the present invention;
FIG. 5 is a block diagram of a switch-type topology provided by an embodiment of the present invention;
FIG. 6 is a diagram of a pi topology according to an embodiment of the present invention;
FIG. 7 is a block diagram of a GaN one-bit parallel driver according to an embodiment of the invention;
FIG. 8 is a circuit diagram of a GaN one-bit parallel driver according to an embodiment of the invention;
FIG. 9 is a circuit diagram of a GaN six-bit parallel driver according to an embodiment of the invention;
fig. 10 is a layout of a broadband digital attenuator based on a GaN HEMT device according to an embodiment of the present invention.
FIG. 11 is a graph of insertion loss test for a broadband digital attenuator based on GaN HEMT devices provided by embodiments of the present invention;
FIG. 12 is a graph showing a basic state attenuation test curve of the broadband digital attenuator based on the GaN HEMT device provided by the embodiment of the invention;
FIG. 13 is a graph of attenuation accuracy testing of a broadband digital attenuator based on a GaN HEMT device provided by an embodiment of the invention;
FIG. 14 is a graph of an attenuation accuracy RMS error test of a broadband digital attenuator based on a GaN HEMT device provided by an embodiment of the invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
Because the existing GaN MMIC attenuator has the defects of less attenuation bits, larger attenuation steps, lower attenuation precision and large insertion loss, the amplitude of a transmission signal can not be controlled by introducing preset attenuation in a specified frequency range. Therefore, the invention is designed specifically for the structure of the attenuator.
Fig. 1 is a functional block diagram of a broadband digital attenuator based on a GaN HEMT device according to an embodiment of the present invention, which may include a sequentially cascaded 16dB attenuation unit, 8dB attenuation unit, 2dB attenuation unit, 1dB attenuation unit, 0.5dB attenuation unit, and 4dB attenuation unit, where the 0.5dB attenuation unit, 1dB attenuation unit, and 2dB attenuation unit are all T-type topologies, the 4dB attenuation unit is a pi-type topology, the 16dB attenuation unit is a switch-type topology, and the 8dB attenuation unit is an optimized pi-type topology.
Wherein optimizing pi topology comprises: pi-type topological structure and microstrip line TL 1 Capacitor C 1 HEMT switch M 4 And an isolation resistor R g4 The radio frequency input end of the pi-type topological structure is used as the radio frequency input end R of the optimized pi-type topological structure in The output end of the pi-type topological structure is connected with a microstrip line TL 1 One end of microstrip line TL 1 Another end of the capacitor C is connected in series with a capacitor C 1 Rear connection HEMT switch M 4 Drain of (3), HEMT switch M 4 Is connected with an isolation resistor R g4 One terminal of HEMT switch M 4 Is grounded, and the isolation resistor R g4 The other end of the voltage transformer is used for inputting a control voltage V of the same direction end P5 And microstrip line TL 1 The other end of the antenna is used as a radio frequency output end R of an optimized pi-type topological structure out 。
According to the embodiment of the invention, the 0.5dB attenuation unit, the 1dB attenuation unit and the 2dB attenuation unit are all in a T-shaped topological structure, the 4dB attenuation unit is in a pi-shaped topological structure, the 16dB attenuation unit is in a switch-type topological structure, and the 8dB attenuation unit is in an optimized pi-shaped topological structure. The 6 attenuation units are integrated on a chip, each attenuation unit is respectively led out of a control line, and when control voltage is provided for the control lines according to a truth table of the attenuator, the attenuation of a certain bit can be increased or removed, so that the attenuation function of minimum stepping of 0.5dB in the range of 0-31.5 dB is realized, the attenuation precision is improved, and the insertion loss is reduced.
Optionally, the 6 attenuation units are formed by attenuation networks composed of GaN HEMT switching devices and passive elements such as resistors, the HEMT switches between the reference path and the attenuation path, and the transmission signals output by the attenuation units through different transmission paths have different amplitudes, so that the function of controlling the amplitude of the transmission signals is realized. Wherein if the 8dB attenuation unit adopts pi type extensionThe designed 8dB attenuation unit has small insertion loss but poor attenuation precision; if the 8dB attenuation unit adopts a switch type topological structure, the 8dB attenuation unit has better attenuation precision but larger insertion loss. As shown in FIG. 2, the 8dB attenuation unit adopts an optimized pi-type topological structure, and V in the optimized pi-type topological structure P5 Is the control voltage, V, of the equidirectional terminal N5 Is the reverse side control voltage. R is g1 One end of which is used for inputting a control voltage V of the reverse end N5 ，R g2 、R g3 、R g4 One end of which is used for inputting a control voltage V of a positive end P5 . Isolation resistor R g1 、R g2 、R g3 And R g4 And plays a role of isolating signals. The working principle of the optimized pi-type topological structure is that when the equidirectional end controls the voltage V p5 At high level, two HEMT switches M connected in parallel 2 And HEMT switch M 3 And conducting. At HEMT switch M 2 And HEMT switch M 3 When conducting, the equivalent on-resistance acts on the attenuation network. By adding a capacitor C on the pi topology 1 And HEMT switch M 4 A phase compensation circuit is formed to reduce the additional phase shift. After the 8dB attenuation unit adopts an optimized pi-type topological structure, the working frequency band is widened, the attenuation precision is improved, and the insertion loss is reduced.
In order to reduce the insertion loss and the circuit size, the 0.5dB attenuation unit and the 1dB attenuation unit may adopt a simplified T-type topology, as shown in fig. 3, and the simplified T-type topology includes: damping resistor R 2 HEMT switch M 5 And an isolation resistor R g5 HEMT switch M 5 Source and attenuation resistor R 2 Series back grounded HEMT switch 5 The grid electrode is externally connected with an isolation resistor R g5 One end of (2), isolation resistor R g5 The other end of the voltage-controlled transformer is used for inputting a control voltage V of the same-direction end P HEMT switch M 5 The drains of the two transistors are respectively used as radio frequency input ends R of the simplified T-shaped topological structure in And simplifying the radio frequency output end R of the T-shaped topological structure out . Wherein, the same-direction end of the 0.5dB attenuation unit controls the voltage V P1 Control voltage V of the same-direction end of 1dB attenuation unit P2 。
As one of the embodiments, as shown in fig. 4,the 2dB attenuation unit adopts a T-shaped topological structure. The T-shaped topological structure comprises a simplified T-shaped topological structure and an attenuation resistor R 4 Damping resistor R 5 Isolation resistor R g7 And HEMT switch M 7 (ii) a HEMT switch M 7 The grid is externally connected with an isolation resistor R g7 One end of (1), an isolation resistor R g7 The other end of the voltage transformer is used for inputting a control voltage V of the reverse end N3 HEMT switch M 7 Source and attenuation resistor R of 4 One end of the T-shaped topological structure is connected and then used as a radio frequency input end R of the T-shaped topological structure in HEMT switch M 7 Drain and attenuation resistor R 5 One end of the T-shaped topological structure is connected and then used as a radio frequency output end R of the T-shaped topological structure out Damping resistance R 4 The other end and an attenuation resistor R 5 Is connected with a HEMT switch M with a simplified T-type topological structure 6 The drain is connected. R is g6 One end of which is used for inputting a control voltage V of a positive end P3 。
Optionally, the 0.5dB attenuation unit and the 1dB attenuation unit adopt a simplified T-type topology structure, which is a simplification of the T-type topology structure, and one serial HEMT switch M is removed from the T-type topology structure 7 Damping resistor R 4 Damping resistor R 5 And an isolation resistor R g7 . Due to HEMT switch M connected in series in FIG. 4 7 Control of voltage V at the reverse end N3 Is turned on at high level, and HEMT switch M at the high level 7 Equivalent to a smaller on-state resistance, insertion loss can be introduced, and the series HEMT switch M is removed from the attenuation units of 0.5dB and 1dB 7 So that the insertion loss becomes small. Because the attenuation amount of the attenuation units of 0.5dB and 1dB is very small, even if the attenuation resistor R is removed from the attenuation network 4 And a damping resistor R 5 The attenuation accuracy is not affected, but the circuit size is reduced.
As one embodiment, as shown in FIG. 5, the 16dB attenuation unit adopts a switch type topology structure which comprises an HEMT switch comprising eight gate-external isolation resistors, a microstrip line TL 2 Open line TLO 1 Open line TLO 2 Damping resistor R 6 Damping resistor R 7 And a damping resistor R 8 。
The HEMT switches of the eight grid electrodes externally connected with the isolation resistors are HEMT switches M 8 Isolation resistor R g8 HEMT switch M 9 Isolation resistor R g9 HEMT switch M 10 And an isolation resistor R g10 HEMT switch M 11 And an isolation resistor R g11 HEMT switch M 12 And an isolation resistor R g12 HEMT switch M 13 And an isolation resistor R g13 HEMT switch M 14 Isolation resistor R g14 HEMT switch M 15 And an isolation resistor R g15 。
HEMT switch M 9 Source and HEMT switch M 10 The sources of the two-way transistor are connected in series and then are jointly used as a radio frequency input end R of a switch type topological structure in HEMT switch M 13 Source and HEMT switch M 14 The sources of the two-way transistor are connected in series and then are used as the radio frequency output end R of the switch type topological structure out 。
HEMT switch M 9 Drain connected microstrip line TL 2 One end of (1), microstrip line TL 2 The other end of the HEMT switch is connected with a HEMT switch M 13 A drain electrode of (1); HEMT switch M 9 Drain electrode of and HEMT switch M 8 Drain electrode connection of HEMT switch M 8 The source of (2) is grounded; HEMT switch M 13 Drain electrode of and HEMT switch M 12 Drain connection of (3), HEMT switch M 12 The source of (2) is grounded; microstrip line TL 2 Are respectively connected with an open line TLO 1 And open line TLO 2 。
HEMT switch M 10 Drain electrode connection attenuation resistor R 6 One terminal of (1), attenuation resistor R 6 The other end of the HEMT switch M is connected with 14 A drain electrode of (1); HEMT switch M 10 Is connected with the HEMT switch M 11 Drain of (3), HEMT switch M 11 The source of (2) is grounded; HEMT switch M 14 Drain connected HEMT switch M 15 Drain electrode of, HEMT switch M 15 The source of (2) is grounded; damping resistor R 6 Are respectively connected with attenuation resistors R 7 And a damping resistor R 8 One end of (1), attenuation resistance R 7 And a damping resistor R 8 And the other ends are respectively grounded.
Isolation resistor R g8 And an isolation resistor R g10 Isolation resistor R g12 And an isolation resistor R g14 One end of the HEMT switch is respectively connected with the HEMT switch M 8 HEMT switch M 10 HEMT switch M 12 And HEMT switch M 14 Is connected to the gate of (2), isolating the resistor R g8 And an isolation resistor R g10 Isolation resistor R g12 And an isolation resistor R g14 The other end of the voltage transformer is used for inputting a control voltage V of the same direction end p6 。
Isolation resistor R g9 Isolation resistor R g11 Isolation resistor R g13 And an isolation resistor R g15 One end of the HEMT switch is respectively connected with the HEMT switch M 9 HEMT switch M 11 HEMT switch M 13 And HEMT switch M 15 Is connected to the gate of the isolating resistor R g9 Isolation resistor R g11 Isolation resistor R g13 And an isolation resistor R g15 The other end of the voltage transformer is used for inputting a control voltage V of the reverse end N6 。
As another embodiment, as shown in FIG. 6, the 4dB attenuation unit adopts a pi-type topology, and the pi-type topology comprises a HEMT switch M 16 HEMT switch M 17 HEMT switch M 18 Isolation resistor R g16 Isolation resistor R g17 Isolation resistor R g18 Damping resistance R 9 Damping resistor R 10 Attenuation resistor R 11 。
HEMT switch M 16 And HEMT switch M 17 The drain electrode is connected and then used as a radio frequency input end R of a pi-type topological structure in HEMT switch M 17 Source electrode of (1) through an attenuation resistor R 9 Grounding; HEMT switch M 16 Source and HEMT switch M 18 The drain electrode of the transistor is connected to be used as a radio frequency output end R of a pi-type topological structure out HEMT switch M 18 Source electrode of (1) through an attenuation resistor R 10 Grounding; damping resistor R 11 Are respectively connected with the HEMT switch M 17 And HEMT switch M 18 Is connected to the drain of (c).
HEMT switch M 16 And the isolation resistor R g16 Is connected to an isolation resistor R g16 The other end of the voltage transformer is used for inputting a control voltage V of the reverse end N4 (ii) a HEMT switch M 17 And the isolation resistor R g17 Is connected to an isolation resistor R g17 The other end of the voltage transformer is used for inputting a control voltage V of the same direction end p4 (ii) a HEMT switch M 18 Gate and isolation resistor R g18 Is connected to an isolation resistor R g18 The other end of the voltage-controlled transformer is used for inputting a control voltage V of the same-direction end p4 。
For convenient interfacing with computer signals and for easy use, a parallel driver is provided for each attenuation unit. As shown in fig. 1, the 16dB attenuation unit, the 8dB attenuation unit, the 2dB attenuation unit, the 1dB attenuation unit, the 0.5dB attenuation unit, and the 4dB attenuation unit are respectively connected to a parallel driver, and all the parallel drivers are drivers with the same structure.
The output voltage port of each parallel driver is respectively connected with the control voltage ports of the 16dB attenuation unit, the 8dB attenuation unit, the 2dB attenuation unit, the 1dB attenuation unit, the 0.5dB unit and the 4dB attenuation unit, and the power ports of all the parallel drivers are connected with one another.
As another embodiment, the parallel driver is a GaN one-bit parallel driver, as shown in fig. 7, the GaN one-bit parallel driver includes: the input protection and level conversion circuit, the second level conversion circuit, the first inverter circuit, the second inverter circuit and the third inverter circuit; the input port of the input protection and level conversion circuit is used as the input port of the GaN one-bit parallel driver, the output end of the input protection and level conversion circuit is connected with the input ends of the first inverter circuit and the second inverter circuit, and the output end of the second inverter circuit is used as the reverse output voltage port of the GaN one-bit parallel driver; the output end of the first phase inverter is connected with the input end of the second level conversion, the output end of the second level conversion is connected with the input end of the third inverter, and the output end of the third phase inverter is used as a homodromous output voltage port of the GaN one-bit parallel driver. The input protection and level conversion circuit converts the TTL level into a negative level, and finally converts the TTL level into a pair of complementary levels V through the logic operation of a relevant inverter circuit PP And V NN 。
Optional, input protection and level conversionThe method comprises the following steps: four diodes D 3 、D 4 、D 5 、D 6 And a voltage dividing resistor R 14 Are connected in series to form D 3 、D 4 、D 5 、D 6 D composed of anode end of diode string as input port of GaN one-bit parallel driver 3 、D 4 、D 5 、D 6 The cathode of the diode string is the input of the first inverter circuit and the second inverter circuit. Input TTL signal is connected with diode D in series 3 、D 4 、D 5 、D 6 And a voltage dividing resistor R 14 The desired level is obtained.
Optionally, the first inverter circuit includes: field effect transistor T 1 Field effect transistor T 4 A voltage dividing resistor R 13 A voltage dividing resistor R 14 And power port V EE . Field effect transistor T 1 As an input port of the first inverter circuit, a field effect transistor T 1 Drain electrode and voltage dividing resistor R 13 Is connected with a voltage dividing resistor R 13 And the other end of the first transistor and the field effect transistor T 4 Of the field effect transistor T 1 And field effect transistor T 4 Of the field effect transistor T 4 The drain of (2) is grounded; field effect transistor T 1 The grid of (2) passes through a divider resistor R 14 Power supply port V of GaN one-bit parallel driver EE And (4) connecting.
The second level shift circuit includes: diode D1, diode D2, field effect transistor T 7 A voltage dividing resistor R 16 And a power supply port V EE . Field effect transistor T 1 And field effect transistor T 4 As an input port of the second level shifter circuit after being connected to the gate, a field effect transistor T 1 And field effect transistor T 4 After being connected with the grid electrode of the diode D in series connection 1 And D 2 Anode connection of (2), diodes D connected in series 1 And D 2 And field effect transistor T 7 Of the field effect transistor T 7 Source electrode and voltage dividing resistor R 16 Is connected at one end to the fieldEffect transistor T 7 Grid and divider resistor R 16 The other end of the GaN single-bit parallel driver is connected with a power supply port V of the GaN single-bit parallel driver EE And (4) connecting.
The third inverter circuit includes: field effect transistor T 5 Field effect transistor T 6 And a voltage dividing resistor R 15 And a same-direction output voltage port V PP . Series-connected diodes D 1 And D 2 And field effect transistor T 7 As an input port of the third inverter circuit, a diode D connected in series 1 And D 2 And field effect transistor T 7 Is connected to the field effect transistor T 6 Of the field effect transistor T 6 Drain electrode of (2) and voltage dividing resistor R 15 Is connected with a voltage dividing resistor R 15 And the other end of the first transistor and the field effect transistor T 5 Of the field effect transistor T 5 Is grounded on the drain, the field effect transistor T 6 And field effect transistor T 5 After being connected with the grid electrode of the GaN one-bit parallel driver, the grid electrode of the GaN one-bit parallel driver is connected with the same-direction output voltage port V of the GaN one-bit parallel driver PP And (4) connecting.
The second inverter circuit includes: field effect transistor T 2 Field effect transistor T 3 And a voltage dividing resistor R 12 And a reverse output voltage port V NN . Field effect transistor T 2 As an input port of the second inverter circuit, a field effect transistor T 2 Is connected to the gate of the field effect transistor T 1 Of a gate electrode of a field effect transistor T 2 Source electrode of and field effect transistor T 1 Of the field effect transistor T 2 Drain electrode and voltage dividing resistor R 12 Is connected with a voltage dividing resistor R 12 And the other end of the first transistor and the field effect transistor T 3 Of the field effect transistor T 3 Is grounded, field effect transistor T 3 Gate of and field effect transistor T 2 After being connected with the drain electrode of the GaN one-bit parallel driver, the reverse output voltage port V of the GaN one-bit parallel driver NN And (4) connecting.
Field effect transistor T 1 Source electrode of (1), field effect transistor T 2 Source electrode of (2) and field effect transistor T 6 Source electrode of the GaN one-bit parallel driver is connected with a power supply port V of the GaN one-bit parallel driver SS Connecting the output terminal of the input protection and level conversion circuit with the field effect transistor T 1 Gate electrode of and field effect transistor T 2 Is connected to the gate of (a).
Optionally, as shown in fig. 1, the operating frequency DC-20 GHz, in the transmission direction of the radio frequency input, the 6 attenuation units are cascaded from left to right in the order of the 16dB attenuation unit, the 8dB attenuation unit, the 2dB attenuation unit, the 1dB attenuation unit, the 0.5dB attenuation unit, and the 4dB attenuation unit. Each attenuation unit corresponds to 1 GaN one-bit parallel driver, the 6 GaN one-bit parallel drivers have the same circuit, and the 6 one-bit parallel drivers form a six-bit parallel driver. The power supply voltage of the GaN one-bit parallel driver is-10V and-16V, and the output complementary level is 0V/-10V. As shown in FIG. 9, the power input port V of the 6 GaN one-bit parallel driver SS The ports are adjacently connected and lead out a total power line and a bonding pressure point, and the power input port V EE The ports are adjacently connected and lead out a total power line and a bonding pressure point.
Input voltage V of GaN one-bit parallel Driver 0.5dB corresponding to 0.5dB attenuation unit IN Denominated control voltage V T1 Input voltage V of GaN one-bit parallel Driver 1dB corresponding to 1dB attenuation unit IN Denominated control voltage V T2 Similarly, the control voltages respectively corresponding to the GaN one-bit parallel Driver 2dB, driver 4dB, driver 8dB and Driver 16dB respectively corresponding to the 2dB attenuation unit, the 4dB attenuation unit, the 8dB attenuation unit and the 16dB attenuation unit are respectively V, and the control voltages respectively corresponding to the GaN one-bit parallel Driver 2dB, the Driver 4dB, the Driver 8dB and the Driver 16dB are respectively V T3 、V T4 、V T5 、V T6 。
Control voltage V of Driver 0.5dB T1 The corresponding same-direction output voltage port is V PP1 Output voltage port V in the same direction PP1 Control voltage V at the same end of 0.5dB attenuation unit P1 And (4) connecting. Control voltage V of Driver 1dB T2 The corresponding same-direction output voltage port is V PP2 Outputting voltage in the same directionPort V PP2 Control voltage V of the same-direction end of the 1dB attenuation unit P2 And (4) connecting. Control voltage V of Driver 2dB T3 Corresponding unidirectional output voltage port V PP3 Reverse output voltage port V NN3 Output voltage port V in the same direction PP3 Control voltage V at the same end of 2dB attenuation unit P3 Connecting, inverting output voltage port V NN3 And the reverse end control voltage V of the 2dB attenuation unit N3 And (4) connecting. Control voltage V of Driver 4dB T4 Corresponding same-direction output voltage port V PP4 Reverse output voltage port V NN4 Output voltage port V in the same direction PP4 And the control voltage V of the positive end of the 4dB attenuation unit p4 Connecting, outputting a voltage port V NN4 Control voltage V at reverse terminal of 4dB attenuation unit N4 And (4) connecting. Control voltage V of Driver 8dB T5 Corresponding unidirectional output voltage port V PP5 Reverse output voltage port V NN5 Output voltage port V in the same direction PP5 Control voltage V at the same end of 8dB attenuation unit P5 Connecting, inverting output voltage port V NN5 And the reverse end control voltage V of the 8dB attenuation unit N5 And (4) connecting. Control voltage V of Driver 16dB T6 Corresponding unidirectional output voltage port V PP6 Reverse output voltage port V NN6 Output voltage port V in the same direction PP6 Control voltage V at the same end of 16dB attenuation unit P6 Connecting, inverting output voltage port V NN6 And the reverse end control voltage V of the 16dB attenuation unit N6 And (4) connecting.
The attenuator truth table is shown in table 1, where "0" indicates a low level of 0V and "1" indicates a high level of 5V. When the control lines are supplied with control voltages according to the attenuator truth table, 6 attenuation units can add or remove the attenuation of a certain bit, thereby realizing the attenuation function of minimum step 0.5dB in the range of 0-31.5 dB.
TABLE 1 attenuator truth table
The control voltage of the six GaN one-bit parallel drivers is the control end of the broadband digital attenuator based on the GaN HEMT device. The number of control ports of the traditional attenuator is 10, the traditional attenuator is not easy to connect, and after parallel drivers are integrated on a chip, the number of control ports is reduced from 10 to 6, so that the traditional attenuator is convenient to be connected with computer interfaces for use.
As another implementation mode, elements in the 16dB attenuation unit, the 8dB attenuation unit, the 2dB attenuation unit, the 1dB attenuation unit, the 0.5dB attenuation unit, the 4dB attenuation unit and the six GaN one-bit parallel drivers are all prepared on the GaN substrate by adopting a thin film process. The GaN HEMT microwave monolithic integrated circuit is manufactured by adopting a GaN HEMT microwave monolithic integrated circuit process technology. The main technological processes of the GaN technology are as follows: mesa isolation, ohmic contact, grid grooving and metallization, device passivation, metal stripping, air bridge preparation, back chemical thinning, through hole technology and the like. The layout of the broadband digital attenuator chip based on the GaN HEMT device shown in fig. 10 needs to be provided to the GaN process line before process processing is performed. The circuit is designed by utilizing the circuit structures of the six attenuation units and the GaN one-bit parallel driver, parameters of components in the circuit are determined, and layout is carried out according to the 6 basic-bit attenuation units, the 6 GaN one-bit parallel drivers and the connection relation among the components in the figure 1. A plurality of basic attenuation units with different attenuation amounts and a parallel driver are integrated on the same chip, all basic attenuation unit circuits are connected in series, a control voltage port of each attenuation unit is connected with an output voltage port of a GaN one-bit parallel driver, and power supply lines of the GaN one-bit parallel driver are connected together. The GaN HEMT device is controlled by the voltage output by the six GaN one-bit parallel drivers, so that the switching of the attenuation state is realized. By comparing simulation performances of different cascade sequences of 6 attenuation units of the GaN digital attenuator and considering reduction of chip area, 16dB, 8dB, 2dB, 1dB, 0.5dB and 4dB are cascaded in sequence during chip layout. The GaN one-bit parallel driver is laid out under the circuit of attenuation units, as shown in fig. 1, each attenuation unit is connected with a parallel driver.
In conclusion, the broadband digital attenuator based on the GaN HEMT device manufactured by the invention has 6 attenuation digits, 0.5dB minimum attenuation step, 31.5dB maximum attenuation, 5W power resistance and a test result within the frequency range of DC-20 GHz: the insertion loss is less than 6.2dB, the attenuation precision is-1.2 dB, and the attenuation RMS error is less than 0.6dB. TTL level control, driver current less than 15mA. The chip size is 2.50mm × 1.00mm × 0.08mm.
Fig. 11-14 are graphs showing the main performance test of the broadband digital attenuator based on the GaN HEMT device manufactured by the method.
FIG. 11 is a graph of insertion loss testing of a broadband digital attenuator based on a GaN HEMT device placed in the zero state according to the attenuator truth table. In the frequency range of DC-20 GHz, the insertion loss of the broadband digital attenuator manufactured by the invention is less than 6.2dB, and the low loss is realized.
FIG. 12 is a graph of the attenuation of the 6 fundamental states 0.5dB, 1dB, 2dB, 4dB, 8dB, 16dB of a broadband digital attenuator based on GaN HEMT devices. Within the frequency range of DC-20 GHz, the broadband digital attenuator can realize amplitude adjustment with the minimum step of 0.5dB, the attenuation of 6 basic states is relatively flat, and the broadband amplitude modulation performance of each basic state attenuation unit is relatively good.
Fig. 13 is a test graph of the attenuation accuracy of the full state (64 states) of the broadband digital attenuator based on GaN HEMT devices. In the frequency range of DC-20 GHz, the full-state attenuation precision of the broadband digital attenuator manufactured by the invention is-1.2 dB, and the amplitude modulation performance of the broadband is realized.
FIG. 14 is a test plot of the attenuation accuracy RMS error of a broadband digital attenuator based on GaN HEMT devices. Within the frequency range of DC-20 GHz, the broadband digital attenuator manufactured by the invention has the advantages that the attenuation precision RMS error is less than 0.6dB, and the broadband amplitude modulation performance is better.
Compared with a GaAs digital attenuator, the broadband digital attenuator based on the GaN HEMT device has the advantages that the power resistance is improved by more than 20 times, the main performance indexes such as attenuation precision and insertion loss and the chip size are comparable to those of the GaAs digital attenuator, and even the GaN broadband digital attenuator is higher in attenuation precision and smaller in size. In the frequency of DC-20 GHz, the attenuation precision of 8dB attenuation state is-0.7 dB, the precision is higher, and the attenuation is flatter in the working frequency band. By integrating parallel drivers on a chip, the number of control terminals is reduced from 10 to 6, and the TTL level is convenient for a computer interface to use.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the embodiments of the present invention, and they should be construed as being included therein.
Claims (9)
1. A broadband digital attenuator based on a GaN HEMT device is characterized by comprising a 16dB attenuation unit, an 8dB attenuation unit, a 2dB attenuation unit, a 1dB attenuation unit, a 0.5dB attenuation unit and a 4dB attenuation unit which are sequentially cascaded, wherein the 0.5dB attenuation unit, the 1dB attenuation unit and the 2dB attenuation unit are all T-shaped topological structures, the 4dB attenuation unit is a pi-shaped topological structure, the 16dB attenuation unit is a switch-type topological structure, and the 8dB attenuation unit is an optimized pi-shaped topological structure;
the optimized pi-type topological structure comprises: pi-type topological structure and microstrip line TL 1 Capacitor C 1 HEMT switch M 4 And an isolation resistor R g4 The radio frequency input end of the pi-type topological structure is used as the radio frequency input end of the optimized pi-type topological structure, and the output end of the pi-type topological structure is connected with the microstrip line TL 1 One end of said microstrip line TL 1 The other end of the capacitor is connected in series with the capacitor C 1 Rear-connected HEMT switch M 4 The HEMT switch M 4 Is connected with the isolation resistor R g4 One terminal of the HEMT switch M 4 The source of (2) is grounded, the isolation resistor R g4 The other end of the microstrip line TL is used for inputting control voltage of the same direction end 1 The other end of the antenna is used as a radio frequency output end of the optimized pi-type topological structure;
the 16dB attenuation unit, the 8dB attenuation unit, the 2dB attenuation unit, the 1dB attenuation unit, the 0.5dB attenuation unit and the 4dB attenuation unit are respectively and correspondingly connected with one parallel driver, and all the parallel drivers are drivers with the same structure; the output voltage port of each parallel driver is respectively connected with the control voltage ports of the 16dB attenuation unit, the 8dB attenuation unit, the 2dB attenuation unit, the 1dB attenuation unit, the 0.5dB attenuation unit and the 4dB attenuation unit, and the power ports of all the parallel drivers are mutually connected; the parallel driver is a GaN one-bit parallel driver, the GaN one-bit parallel driver comprising: the circuit comprises an input protection and level conversion circuit, a second level conversion circuit, a first inverter circuit, a second inverter circuit and a third inverter circuit.
2. The broadband digital attenuator based on the GaN HEMT device of claim 1, wherein the 0.5dB attenuation unit and the 1dB attenuation unit are simplified T-type topologies;
the simplified T-topology comprises: damping resistor R 2 HEMT switch M 5 And an isolation resistor R g5 The HEMT switch M 5 And the attenuation resistor R 2 After being connected in series, the HEMT switch M is grounded 5 The grid is externally connected with an isolation resistor R g5 Of said isolation resistor R g5 The other end of the HEMT switch is used for inputting a control voltage of a same-direction end, and the HEMT switch M 5 The drain electrodes of the two-way capacitors are respectively used as the simplified T-type topological structure radio frequency input end and the simplified T-type topological structure radio frequency output end.
3. The GaN HEMT device-based broadband digital attenuator of claim 2, wherein the T-topology comprises the simplified T-topology, an attenuation resistor R 4 Damping resistor R 5 Isolation resistor R g7 And HEMT switch M 7 ；
The HEMT switch M 7 The grid is externally connected with an isolation resistor R g7 Of said isolation resistor R g7 The other end of the HEMT is used for inputting a reverse end control voltage, and the HEMT is turned onClosing M 7 And the attenuation resistor R 4 One end of the HEMT switch M is connected and then used as the radio frequency input end of the T-shaped topological structure, and the HEMT switch M 7 And the attenuation resistor R 5 One end of the T-shaped topological structure is connected and then used as the radio frequency output end of the T-shaped topological structure, and the attenuation resistor R 4 Another terminal and an attenuation resistor R 5 Is connected with the simplified T-type topology HEMT switch M 6 Is connected to the drain of (1).
4. The GaN HEMT device-based broadband digital attenuator of claim 1, wherein the switch-type topology comprises eight HEMT switches with gate external isolation resistors, a microstrip line TL, and 2 open line TLO 1 Open line TLO 2 Damping resistor R 6 Damping resistor R 7 And a damping resistor R 8 ；
The HEMT switches of the eight grid electrodes externally connected with the isolation resistors are HEMT switches M 8 And an isolation resistor R g8 HEMT switch M 9 And an isolation resistor R g9 HEMT switch M 10 And an isolation resistor R g10 HEMT switch M 11 Isolation resistor R g11 HEMT switch M 12 And an isolation resistor R g12 HEMT switch M 13 And an isolation resistor R g13 HEMT switch M 14 And an isolation resistor R g14 HEMT switch M 15 And an isolation resistor R g15 ；
The HEMT switch M 9 And the HEMT switch M 10 The source electrode of the HEMT is connected and then used as the radio frequency input end of the switch type topological structure, and the HEMT switch M 13 And the HEMT switch M 14 The source electrodes are connected and then are used as the radio frequency output end of the switch type topological structure;
the HEMT switch M 9 Is connected to the microstrip line TL 2 The microstrip line TL 2 Is connected with the HEMT switch M 13 A drain electrode of (1); the HEMT switch M 9 And the HEMT switch M 8 The drain of the HEMT switch M 8 The source of (2) is grounded;the HEMT switch M 13 And the HEMT switch M 12 The drain of the HEMT switch M 12 The source of (2) is grounded; the microstrip line TL 2 Are respectively connected with the open line TLO 1 And said open line TLO 2 ；
The HEMT switch M 10 Is connected to the attenuation resistor R 6 The damping resistor R, the damping resistor R 6 Is connected with the HEMT switch M 14 A drain electrode of (1); the HEMT switch M 10 Is connected with the HEMT switch M 11 The HEMT switch M 11 The source of (2) is grounded; the HEMT switch M 14 Is connected to the HEMT switch M 15 The HEMT switch M 15 The source of (2) is grounded; the attenuation resistor R 6 Are respectively connected with the attenuation resistor R 7 And the attenuation resistor R 8 Of the attenuation resistor R 7 And the attenuation resistor R 8 The other ends of the two are respectively grounded;
the isolation resistor R g8 And an isolation resistor R g10 Isolation resistor R g12 And an isolation resistor R g14 One end of the HEMT switch is respectively connected with the HEMT switch M 8 HEMT switch M 10 HEMT switch M 12 And HEMT switch M 14 The gate of the isolation resistor R g8 Isolation resistor R g10 Isolation resistor R g12 And an isolation resistor R g14 The other end of the first switch is used for inputting control voltage of a same-direction end;
the isolation resistor R g9 And an isolation resistor R g11 And an isolation resistor R g13 And an isolation resistor R g15 One end of the HEMT switch is respectively connected with the HEMT switch M 9 HEMT switch M 11 HEMT switch M 13 And HEMT switch M 15 The gate of the isolation resistor R g9 And an isolation resistor R g11 And an isolation resistor R g13 And an isolation resistor R g15 And the other end of the first switch is used for inputting a control voltage of the reverse end.
5. The GaN HEMT device-based broadband digital attenuation of claim 1Wherein the pi topology includes a HEMT switch M 16 HEMT switch M 17 HEMT switch M 18 Isolation resistor R g16 Isolation resistor R g17 Isolation resistor R g18 Damping resistance R 9 Attenuation resistor R 10 Damping resistor R 11 ；
The HEMT switch M 16 And the HEMT switch M 17 The drain electrode of the HEMT is connected and then used as the radio frequency input end of the pi-type topological structure, and the HEMT switch M 17 Through the attenuating resistor R 9 Grounding; the HEMT switch M 16 And the HEMT switch M 18 The drain electrode of the HEMT is connected and then used as the radio frequency output end of the pi-type topological structure, and the HEMT switch M 18 Through the attenuating resistor R 10 Grounding; the attenuation resistor R 11 Are respectively connected with the HEMT switch M 17 And HEMT switch M 18 Is connected with the drain electrode of the transistor;
the HEMT switch M 16 And the isolation resistor R g16 Is connected to one end of the isolation resistor R g16 The other end of the switch is used for inputting reverse end control voltage; the HEMT switch M 17 And the isolation resistor R g17 Is connected to the isolation resistor R g17 The other end of the first switch is used for inputting control voltage of a same-direction end; the HEMT switch M 18 And the isolation resistor R g18 Is connected to one end of the isolation resistor R g18 And the other end of the input end is used for inputting a control voltage of the same-direction end.
6. The GaN HEMT device-based broadband digital attenuator of claim 1, wherein the input port of the input protection and level conversion circuit serves as the GaN one-bit parallel driver input port, the output terminal of the input protection and level conversion circuit is connected with the input terminals of a first inverter circuit and a second inverter circuit, and the output terminal of the second inverter circuit serves as the inverted output voltage port of the GaN one-bit parallel driver; the output end of the first phase inverter is connected with the input end of the second level conversion, the output end of the second level conversion is connected with the input end of the third phase inverter, and the output end of the third phase inverter is used as a homodromous output voltage port of the GaN one-bit parallel driver.
7. The broadband digital attenuator based on GaN HEMT devices of claim 6, wherein the input protection and level conversion circuit is composed of at least one diode connected in series; and the anode end of the formed diode string is used as the input port of the GaN one-bit parallel driver, and the cathode end of the diode string is connected with the input ports of the first inverter circuit and the second inverter circuit.
8. The GaN HEMT device-based broadband digital attenuator of claim 6, wherein the first inverter circuit comprises: field effect transistor T 1 Field effect transistor T 4 A voltage dividing resistor R 13 And a voltage dividing resistor R 14 And power port V EE ；
The field effect transistor T 1 As an input port of the first inverter circuit, the field effect transistor T 1 And the voltage dividing resistor R 13 Is connected with one end of the voltage dividing resistor R 13 And the other end of the field effect transistor T 4 Of the field effect transistor T, the field effect transistor T 1 And said field effect transistor T 4 Of said field effect transistor T 4 The drain electrode of (2) is grounded; the field effect transistor T 1 Through the divider resistor R 14 With the power supply port V of the GaN one-bit parallel driver EE Connecting;
the second level shift circuit includes: diode D1, diode D2, field effect transistor T 7 And a voltage dividing resistor R 16 And a power supply port V EE ；
The field effect transistor T 1 And said field effect transistor T 4 As an input port of the second level shifter circuit, the field effect transistorT 1 And said field effect transistor T 4 After being connected with the grid electrode of the diode D in series connection 1 And D 2 Anode of (2) a diode D connected in series 1 And D 2 And said field effect transistor T 7 Of the field effect transistor T, the field effect transistor T 7 And the divider resistor R 16 Is connected to one terminal of the field effect transistor T 7 And the divider resistor R 16 Is connected with the power supply port V of the GaN one-bit parallel driver EE Connecting;
the third inverter circuit includes: field effect transistor T 5 Field effect transistor T 6 A voltage dividing resistor R 15 ；
Series diode D 1 And D 2 And said field effect transistor T 7 As an input port of the third inverter circuit, a diode D connected in series 1 And D 2 And said field effect transistor T 7 Is connected to the field effect transistor T 6 Of said field effect transistor T 6 And the voltage dividing resistor R 15 Is connected with one end of the voltage dividing resistor R 15 And the other end of the field effect transistor T 5 Of the field effect transistor T, the field effect transistor T 5 Is grounded, said field effect transistor T 6 And said field effect transistor T 5 The grid of the GaN one-bit parallel driver is connected with the same-direction output voltage port of the GaN one-bit parallel driver after being connected;
the second inverter circuit includes: field effect transistor T 2 Field effect transistor T 3 A voltage dividing resistor R 12 ；
The field effect transistor T 2 As an input port of the second inverter circuit, the field effect transistor T 2 Is connected to the field effect transistor T 1 Of the field effect transistor T 2 And the field effect transistor T 1 Of said field effect transistor T 2 Of the drain electrodeAnd the voltage-dividing resistor R 12 Is connected with one end of the voltage dividing resistor R 12 And the other end of the field effect transistor T 3 Of the field effect transistor T, the field effect transistor T 3 Is grounded, said field effect transistor T 3 And the field effect transistor T 2 The drain electrode of the GaN one-bit parallel driver is connected with the reverse output voltage port of the GaN one-bit parallel driver;
the field effect transistor T 1 Source electrode of, said field effect transistor T 2 Source electrode of and field effect transistor T 6 Source electrode of the GaN one-bit parallel driver is connected with a power supply port V of the GaN one-bit parallel driver SS Connecting;
the output end of the input protection and level conversion circuit and the field effect transistor T 1 And said field effect transistor T 2 Is connected to the gate of (a).
9. The broadband digital attenuator based on the GaN HEMT device of claim 1, wherein the 16dB attenuation unit, the 8dB attenuation unit, the 2dB attenuation unit, the 1dB attenuation unit, the 0.5dB attenuation unit, the 4dB attenuation unit and six parallel drivers are integrated on the same chip.
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| CN1109228A (en) * | 1993-09-30 | 1995-09-27 | 索尼公司 | Attenuator circuit apparatus |
| CN107707218A (en) * | 2017-09-18 | 2018-02-16 | 曾传德 | The embedded five-digit number control attenuator of switch based on low-pass filter network |
| CN109687840A (en) * | 2018-12-13 | 2019-04-26 | 中国电子科技集团公司第五十五研究所 | Low-loss minimizes silicon substrate numerical-control attenuator |
| CN110830001A (en) * | 2019-11-20 | 2020-02-21 | 南京汇君半导体科技有限公司 | Ultra-wideband attenuator |
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