CN112670151B - Plasma processing device capable of improving verticality of plasma processing - Google Patents
Plasma processing device capable of improving verticality of plasma processing Download PDFInfo
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- CN112670151B CN112670151B CN202010809687.9A CN202010809687A CN112670151B CN 112670151 B CN112670151 B CN 112670151B CN 202010809687 A CN202010809687 A CN 202010809687A CN 112670151 B CN112670151 B CN 112670151B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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Abstract
The present invention relates to a plasma processing apparatus having improved verticality of plasma processing, comprising: a chamber constituting a region for processing a substrate with plasma; a chuck which is located in the chamber so as to mount the substrate thereon, and to which a bias power for inducing the plasma to the substrate is applied; a first portion formed inside the chuck in such a manner as to receive a substrate; a second portion formed at an outer side of the chuck at a height lower than the first portion; and a focus ring that covers the second portion and surrounds the first portion so as to expose the first portion, the first portion including: and a dielectric portion formed to have a width larger than that of the substrate so as to space the substrate from the second portion and to contact a lower surface of the substrate.
Description
Technical Field
The present invention relates to a plasma processing apparatus in which the verticality of plasma processing is improved.
Background
As illustrated in fig. 1, the plasma processing apparatus is an apparatus that processes a substrate 100 (e.g., etching, evaporation, etc.) using plasma.
Among the components of the plasma processing apparatus, the focus ring 400 is a main component of the plasma processing apparatus that prevents the chuck 300, on which the substrate 100 is mounted, from being plasma-processed.
In particular, the focus ring 400 is an essential component for the chuck 300 to which the bias power 700 for inducing plasma toward the substrate 100 is applied.
At this time, the substance constituting the focus ring 400 may be a dielectric (e.g., SiO)2，Al2O3Etc.) or semiconductors (e.g., Si, etc.).
The chuck 300 for mounting the focus ring 400 has a shape including a first portion 310 formed inside the chuck 300 to mount the substrate 100 and a second portion 320 formed outside the chuck 300 at a height lower than that of the first portion 310.
At this time, in the process of processing the substrate 100 using plasma, the plasma incidence angle (plasma incidence angle) is inclined toward the substrate 100 side between the substrate 100 and the focus ring 400 due to the shape of the chuck 300.
As described above, when the plasma incident angle is inclined, the outer side of the substrate 100 is subjected to the plasma processing with the inclined incident angle, and the outer side of the substrate 100 subjected to the plasma processing with the inclined incident angle has a problem that the plasma processing verticality (plasma processing verticality angle) is inclined (for example, a problem that etching is performed with the substrate inclined to the + side or the-side with respect to the vertical 0 degree; vertical indexes).
Such a problem leads to a decrease in the usable area of the substrate 100, and the larger the area of the substrate 100 is, the smaller the usable area is.
Disclosure of Invention
Technical problem
The invention aims to provide a plasma processing device which improves the verticality of plasma processing.
Technical scheme
The plasma processing apparatus of an embodiment of the present invention, which improves the verticality of plasma processing, includes: a chamber constituting a region for processing a substrate with plasma; a chuck located in the chamber so as to place the substrate thereon; a first portion formed inside the chuck in such a manner as to receive a substrate; a second portion formed at an outer side of the chuck at a lower height than the first portion; and a focus ring that covers the second portion and surrounds the first portion so as to expose the first portion, the first portion including: and a dielectric portion formed to have a width larger than that of the substrate so as to space the substrate from the second portion and to contact a lower surface of the substrate.
According to an embodiment, the chuck is applied with a bias power source inducing the plasma toward the substrate, the dielectric part includes: a first dielectric portion region which forms a region recessed from an outer side of the dielectric portion and in which the substrate is placed; and a second dielectric portion region that constitutes a region formed higher than the first dielectric portion region so as to surround the substrate.
According to an embodiment, the plasma processing apparatus with improved verticality of plasma processing is characterized in that the focus ring surrounds the second dielectric region.
According to an embodiment, the plasma processing apparatus having improved verticality of plasma processing is characterized by comprising: electrode lines included in the dielectric part and applied with a DC power in such a manner as to apply an electrostatic force to the substrate, the electrode lines being located in the first dielectric part region.
According to an embodiment, the plasma processing apparatus having improved verticality of plasma processing is characterized in that the focus ring extends inward to cover an upper portion of the second dielectric region.
According to an embodiment, the plasma processing apparatus having improved verticality of plasma processing is characterized in that the upper portion of the second dielectric region is covered with a shield ring that is lifted and lowered by a lifting mechanism.
According to an embodiment, the plasma processing apparatus having improved verticality of plasma processing is characterized in that the dielectric portion includes: a first dielectric portion region constituting a region where the substrate is mounted; and a second dielectric portion region which constitutes an expanded region arranged around the substrate by extending from the first dielectric portion region, wherein the focus ring extends inward to cover an upper portion of the second dielectric portion region.
The plasma processing apparatus of an embodiment of the present invention, which improves the verticality of plasma processing, includes: a chamber constituting a region for processing a substrate by plasma; a chuck which is located in the chamber so as to mount the substrate thereon, and to which a bias power for inducing the plasma to the substrate is applied; a first portion formed inside the chuck in such a manner as to receive a substrate; a second portion formed at an outer side of the chuck at a lower height than the first portion; and a focus ring that covers the second portion and covers an outer side of the first portion so that an inner side of the first portion is exposed, the focus ring including: a first body part which is in contact with the upper surface of the second part; and a second body portion formed inside the first body portion in a stepped manner so as to be in contact with an upper surface of the first portion.
According to an embodiment, the first part comprises: a dielectric portion in contact with a lower surface of the substrate; and electrode lines included in the dielectric portion and applied with a DC power source for applying an electrostatic force to the substrate, the electrode lines extending so as to be located below the second body portion.
According to one embodiment, the plasma processing apparatus for improving verticality of plasma processing includes: and a metal layer located under the second body portion and to which electrostatic force of the electrode line is applied so as to closely adhere the second body portion to the dielectric portion.
According to an embodiment, the plasma processing apparatus with improved verticality of plasma processing is characterized in that the metal layer is formed by one of evaporation, gold plating and sputtering.
According to an embodiment, the plasma processing apparatus having improved verticality of plasma processing is characterized by comprising: and a third body portion extending inside the second body portion to cover an outer side of the substrate in a stepped manner.
According to an embodiment, the plasma processing apparatus having improved verticality of plasma processing is characterized in that the inner upper edge of the third body is formed obliquely.
According to an embodiment, the plasma processing apparatus having improved verticality of plasma processing is characterized in that the second main body is formed by extending the first main body.
According to an embodiment, the plasma processing apparatus having improved verticality of plasma processing is characterized in that the second main body portion is formed separately from the first main body portion.
According to an embodiment, the plasma processing apparatus having improved verticality of plasma processing is characterized in that a Relative Permittivity (Relative Permittivity) of a substance constituting the second main body portion is higher than a Relative Permittivity (Relative Permittivity) of a substance constituting the first main body portion.
According to an embodiment, the plasma processing apparatus having an improved verticality of plasma processing is characterized in that the second body portion is formed to cover an upper portion of the first body portion.
According to an embodiment, the plasma processing apparatus having improved verticality of plasma processing is characterized in that the second main body is formed to surround the first main body.
ADVANTAGEOUS EFFECTS OF INVENTION
The invention has the effect of preventing the verticality inclination of the plasma processing on the outer side of the substrate.
Drawings
Fig. 1 is a diagram of a conventional plasma processing apparatus.
Fig. 2 is a diagram of a plasma processing apparatus with improved verticality of plasma processing, in relation to an embodiment of the present invention.
Fig. 3 is a diagram relating to an embodiment different from fig. 2.
Fig. 4 is a diagram relating to an embodiment different from fig. 2.
Fig. 5 is a diagram relating to an embodiment different from fig. 2.
Fig. 6 is a perspective view and a sectional view of a focus ring of the embodiment of fig. 5.
Fig. 7 is a diagram relating to an embodiment different from fig. 5.
Fig. 8 is a diagram relating to an embodiment different from fig. 5.
Fig. 9 is a diagram relating to an embodiment different from fig. 5.
Fig. 10 is a diagram relating to an embodiment different from fig. 5.
Reference numerals
100: substrate, 200: chamber, 300: chuck, 310: first portion, 311: dielectric portion, 311A: first dielectric portion region, 311B: second dielectric portion region, 312: electrode line, 320: second part, 400: focus ring, 410: first body portion, 420: second body portion, 421: metal layer, 430: third body portion, 500: shield ring, 600: elevating system, 700: bias power supply, 800: a DC power supply.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings so that those skilled in the art to which the present invention pertains can easily carry out the embodiments.
The present invention may be embodied in many different forms and is not limited to the embodiments described herein.
As illustrated in fig. 1, the plasma processing apparatus is an apparatus that processes a substrate 100 (e.g., etching, evaporation, etc.) using plasma.
Among the components of the plasma processing apparatus, the focus ring 400 is a main component of the plasma processing apparatus that prevents the chuck 300, on which the substrate 100 is mounted, from being plasma-processed.
In particular, the focus ring 400 is an essential component for the chuck 300 to which the bias power 700 for inducing plasma toward the substrate 100 is applied.
At this time, the substance constituting the focus ring 400 may be a dielectric (e.g., SiO)2，Al2O3Etc.) or semiconductors (e.g., Si, etc.).
The chuck 300 for mounting the focus ring 400 has a shape including a first portion 310 formed inside the chuck 300 to mount the substrate 100 and a second portion 320 formed outside the chuck 300 at a height lower than that of the first portion 310.
At this time, in the process of processing the substrate 100 using plasma, the plasma incidence angle (plasma incidence angle) is inclined toward the substrate 100 side between the substrate 100 and the focus ring 400 due to the shape of the chuck 300.
As described above, when the plasma incident angle is inclined, the outer side of the substrate 100 is subjected to the plasma processing with the inclined incident angle, and the outer side of the substrate 100 subjected to the plasma processing with the inclined incident angle has a problem that the plasma processing verticality (plasma processing verticality angle) is inclined (for example, a problem that etching is performed with the substrate inclined to the + side or the-side with respect to the vertical 0 degree; vertical indexes).
Such a problem leads to a decrease in the usable area of the substrate 100, and the larger the area of the substrate 100 is, the smaller the usable area is.
To solve such a problem, as illustrated in fig. 2, the plasma processing apparatus of an embodiment of the present invention, which improves the verticality of plasma processing, includes a chamber 200, a chuck 300, a first part 310, a second part 320, and a focus ring 400.
The chamber 200 is a region where the substrate 100 is processed using plasma.
The chuck 300 is located in the chamber 200 in such a manner as to mount the substrate 100 on the upper portion, and is applied with a bias power 700 for inducing plasma toward the substrate 100.
The chuck 300 includes a first portion 310 and a second portion 320.
The first portion 310 is formed inside the chuck 300 to protrude upward in a diameter larger than the substrate 100 in such a manner as to receive the substrate 100.
The second portion 320 is formed at the outer side of the chuck 300 at a lower height than the first portion 310.
The focus ring 400 covers the second portion 320 and surrounds the first portion 310 in such a manner that the first portion 310 is exposed.
As illustrated in fig. 2, a first portion 310 of a plasma processing apparatus of an embodiment of the present invention, which improves the verticality of plasma processing, includes a dielectric portion 311.
The dielectric portion 311 is formed to have a width greater than that of the substrate 100 so that the substrate 100 is spaced apart from the second portion 320 and contacts the lower surface of the substrate 100.
In order to mount the focus ring 400 on the chuck 300, the second portion 320 needs to be formed at a lower height than the first portion 310, and the focus ring 400 needs to be mounted in such a manner as to meet the upper side of the second portion 320.
However, there is a problem in that the plasma incident angle may be inclined at the first and second portions 310 and 320 due to the height difference between the first and second portions 310 and 320.
In order to solve such a problem, in the present invention, instead of the conventional method of forming the width of the dielectric portion 311 smaller than the width of the substrate 100 (that is, forming the width of the first portion 310 smaller than the width of the substrate 100) so that the substrate 100 spans between the first portion 310 and the second portion 320, the width of the dielectric portion 311 is formed larger than the width of the substrate 100 (that is, the width of the first portion 310 is formed larger than the width of the substrate 100) so that the substrate 100 and the second portion 320 are spaced apart by a distance corresponding to the width of the dielectric portion 311 extending larger than the width of the substrate 100.
Thereby, the outer side of the substrate 100 is spaced apart from the position where the plasma incident angle is inclined, thereby preventing the inclined plasma incident angle from causing the verticality of the plasma processing on the outer side of the substrate 100 to be inclined.
This has the effect of preventing the verticality of the plasma processing on the outer side of the substrate 100 from being inclined.
As illustrated in fig. 2, the dielectric portion 311 of the plasma processing apparatus of the embodiment of the present invention, which improves the verticality of plasma processing, includes a first dielectric portion region 311A and a second dielectric portion region 311B.
The first dielectric portion region 311A is an inner region of the dielectric portion 311 constituting a recess that is recessed from the outer side of the dielectric portion 311 (i.e., the second dielectric portion region 311B) and in which the substrate 100 is placed.
The second dielectric portion region 311B is a region formed to surround the substrate 100 at a level higher than that of the first dielectric portion region 311A.
In the present invention, the height of the second dielectric portion region 311B is formed higher than the height of the first dielectric portion region 311A so that the second dielectric portion region 311B replaces a part performing the function of the focus ring 400.
That is, the second dielectric portion region 311B is disposed between the substrate 100 and the focus ring 400 so that the second dielectric portion region 311B performs a part of the function of the focus ring 400 instead.
The material constituting the dielectric portion 311 may be, for example, Al2O3AlN and Ceramics (Ceramics).
The second dielectric portion region 311B surrounds the focus ring 400.
As illustrated in fig. 2, the plasma processing apparatus of the embodiment of the present invention, which improves the verticality of plasma processing, includes electrode wires 312.
The electrode line 312 is included in the dielectric portion 311, and the DC power 800 is applied so as to apply an electrostatic force (electrostatic force) to the substrate 100 and to bring the substrate 100 into close contact with the dielectric portion 311.
The electrode lines 312 are located in the first dielectric part region 311A so as to correspond to the width of the substrate 100.
Next, a specific example for preventing the second dielectric portion region 311B from being plasma-treated will be described hereinafter.
First, as illustrated in fig. 3, the following features are included.
The focus ring 400 extends inward to cover the upper portion of the second dielectric portion region 311B.
When the focus ring 400 covers the upper portion of the second dielectric portion region 311B, it is possible to prevent plasma from being damaged by the second dielectric portion region 311B.
At this time, since the focus ring 400 prevents the second dielectric portion region 311B from being damaged, the material constituting the dielectric portion 311 is other than the aforementioned Al2O3AlN, ceramic (Ceramics), and Polyimide (Polyimide) having relatively lower durability than other materials may be used.
Next, as illustrated in fig. 4, the following features are included.
The upper portion of the second dielectric portion region 311B is covered with the shield ring 500 which is lifted and lowered by the lifting mechanism 600.
At this time, the shadow ring 500 may further cover the upper portion of the focus ring 400 in addition to the upper portion of the second dielectric portion region 311B.
The shield ring 500 is formed in an annular shape having a hole formed therein in a shape corresponding to the shape of the substrate 100.
When the shield ring 500 covers the upper portion of the second dielectric portion region 311B, the second dielectric portion region 311B can be prevented from being damaged by the plasma treatment.
At this time, since the shielding ring 500 prevents the second dielectric portion region 311B from being damaged, the material constituting the dielectric portion 311 is other than the aforementioned Al2O3AlN, ceramic (Ceramics), and Polyimide (Polyimide) having relatively lower durability than other materials may be used.
As an embodiment different from the embodiment in which a part of the action of the focus ring 400 is performed by forming the height of the second dielectric portion region 311B higher than the height of the first dielectric portion region 311A as shown in the foregoing fig. 2 to 4, as shown in fig. 5 to 10, it is possible to maintain the height of the second dielectric portion region 311B to be the same as the height of the first dielectric portion region 311A and to cover the upper portion of the second dielectric portion region 311B by the focus ring 400.
As an embodiment in which such a focus ring 400 covers the upper portion of the second dielectric portion region 311B, as illustrated in fig. 5, the following features are included.
The first dielectric portion region 311A is a region where the substrate 100 is mounted.
The second dielectric portion region 311B is an expanded region extending from the first dielectric portion region 311A and disposed around the substrate 100.
The focus ring 400 extends inward to cover the upper portion of the second dielectric portion region 311B.
Embodiments in which the focus ring 400 covers the upper portion of the second dielectric portion region 311B will be described in detail later.
As illustrated in fig. 5, the plasma processing apparatus of the embodiment of the present invention, which improves the verticality of plasma processing, includes a chamber 200, a chuck 300, a first part 310, a second part 320, and a focus ring 400.
The chamber 200 is a region where the substrate 100 is processed using plasma.
The chuck 300 is located in the chamber 200 in such a manner as to mount the substrate 100 on the upper portion, and is applied with a bias power 700 for inducing plasma toward the substrate 100.
The chuck 300 includes a first portion 310 and a second portion 320.
The first portion 310 is formed at the inner side of the chuck 300 to protrude upward in a diameter larger than that of the substrate 100 in such a manner as to receive the substrate 100.
The second portion 320 is formed at the outer side of the chuck 300 at a lower height than the first portion 310.
The focus ring 400 covers the second portion 320 and covers the outside of the first portion 310 in such a manner that the inside of the first portion 310 including the portion where the substrate 100 is seated is exposed.
As illustrated in fig. 5, a focus ring 400 of a plasma processing apparatus with improved verticality of plasma processing according to an embodiment of the present invention includes a first body 410 and a second body 420.
The first body portion 410 is in contact with the upper surface of the second portion 320.
The second body portion 420 is formed to be stepped toward the inside of the first body portion 410 and is in contact with the upper surface of the first portion 310.
During processing of the substrate 100 using the plasma, the temperature of the focus ring 400 is increased by the plasma.
At this time, the medium gas, which transfers the temperature of the chuck 300 to the substrate 100, is also supplied to the lower portion of the second body part 420, thereby adjusting the rising temperature of the focus ring 400.
In addition, the second body part 420 meets the first part 310, thereby preventing the first part 310 from being plasma-treated.
In this manner, since the medium gas for transferring the temperature of the chuck 300 is supplied to the lower portion of the second body part 420, there is an effect that the temperature of the focus ring 400 can be adjusted.
In addition, the second body part 420 is in contact with the first part 310, thereby having an effect of preventing the first part 310 from being plasma-treated.
As illustrated in fig. 5, the first portion 310 of the plasma processing apparatus of the embodiment of the present invention, which improves the verticality of plasma processing, includes a dielectric part 311 and an electrode line 312.
The dielectric portion 311 is in contact with the lower surface of the substrate 100.
The material constituting the dielectric 311 may be, for example, polyimideImine (Polyimide), Al2O3AlN and Ceramics (Ceramics).
The electrode line 312 is included in the dielectric portion 311, and the DC power 800 is applied so as to apply an electrostatic force (electrostatic force) to the substrate 100 and to bring the substrate 100 into close contact with the dielectric portion 311.
The electrode line 312 extends so as to be located at a lower portion of the second body portion 420.
At this time, the width of the electrode line 312 may be formed wider than the width of the substrate 100.
As illustrated in fig. 6, the plasma processing apparatus with improved verticality of plasma processing according to the embodiment of the present invention includes a metal layer 421.
The metal layer 421 is located below the second body portion 420, and an electrostatic force (electrostatic force) of the electrode line 312 is applied to the metal layer so as to make the second body portion 420 and the dielectric portion 311 tightly contact each other.
The metal layer 421 is formed by one of evaporation (Deposition), Plating (Plating), and Sputtering (Sputtering).
In this way, electrostatic force (electrostatic force) is applied to the metal layer 421, so that the focus ring 400 is prevented from being lifted.
As illustrated in fig. 7, the plasma processing apparatus with improved verticality of plasma processing according to the embodiment of the present invention includes a third body 430.
The third body 430 extends inside the second body 420 to cover the outside of the substrate 100 in a stepped manner.
The height of the third body portion 430 is formed to be smaller than that of the second body portion 420.
The inner upper edge of the third body portion 430 is formed obliquely, so that a shadow area of the substrate 100, which is not processed but is shielded by the third body portion 430, can be reduced.
For reference, although fig. 5, 6, 8, 9 and 10 do not illustrate the third body part 430 to be included, the third body part 430 may be included as needed.
In the plasma processing apparatus of the embodiment of the present invention, which improves the verticality of plasma processing, the second body part 420 may be formed by extending the first body part 410, as illustrated in fig. 5, or the second body part 420 may be formed separately from the first body part 410, as illustrated in fig. 8.
A specific example of the case where the second body portion 420 is formed separately from the first body portion 410 will be described later.
The Relative Permittivity (Relative Permittivity) of the material constituting the first and second main body portions 420 may be higher than the Relative Permittivity of the material constituting the first main body portion 410.
Second, as illustrated in fig. 9, the second body part 420 may be formed to cover an upper portion of the first body part 410.
Third, as illustrated in fig. 10, the second body portion 420 may be formed to surround the first body portion 410.
The first, second and third embodiments can be implemented separately or in combination of two or more of them.
Although the present invention has been described in detail by way of preferred embodiments, the present invention is not limited thereto but can be variously embodied within the scope of the claims.
Claims (3)
1. A plasma processing apparatus having improved verticality of plasma processing, comprising:
a chamber constituting a region for processing a substrate with plasma;
a chuck located in the chamber in such a manner as to receive the substrate at an upper portion thereof, and including a first portion formed at an inner side of the chuck in such a manner as to receive the substrate and having a width greater than that of the substrate and a second portion formed at an outer side of the chuck at a height lower than that of the first portion; and
a focus ring that covers the second portion and surrounds the first portion in such a manner that the first portion is exposed,
the first portion includes:
a dielectric portion formed to have a width larger than that of the substrate so as to space the substrate from the second portion and to contact a lower surface of the substrate; and
electrode lines included in the dielectric portion and to which a DC power is applied so as to apply an electrostatic force to the substrate,
the dielectric portion includes:
a first dielectric portion region which forms a region recessed from an outer side of the dielectric portion and in which the substrate is placed; and
a second dielectric portion region that constitutes a region formed higher than the first dielectric portion region so as to surround the substrate,
the chuck is applied with a bias power that induces the plasma toward the substrate,
the focus ring surrounds the second dielectric portion region,
the electrode line is located within the first dielectric portion region.
2. The plasma processing apparatus with improved verticality of plasma processing according to claim 1,
the focus ring extends inward to cover an upper portion of the second dielectric portion region.
3. The plasma processing apparatus with improved verticality of plasma processing according to claim 1, wherein the verticality of plasma processing is greater than the verticality of plasma processing,
the upper part of the second dielectric part region is covered by a shielding ring which is lifted and lowered by a lifting mechanism.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020190127682A KR102077975B1 (en) | 2019-10-15 | 2019-10-15 | Plasma treatment device with improved plasma treatment verticality |
| KR10-2019-0127682 | 2019-10-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112670151A CN112670151A (en) | 2021-04-16 |
| CN112670151B true CN112670151B (en) | 2022-07-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010809687.9A Active CN112670151B (en) | 2019-10-15 | 2020-08-12 | Plasma processing device capable of improving verticality of plasma processing |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR102077975B1 (en) |
| CN (1) | CN112670151B (en) |
| TW (1) | TWI780467B (en) |
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| US11195756B2 (en) * | 2014-09-19 | 2021-12-07 | Applied Materials, Inc. | Proximity contact cover ring for plasma dicing |
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| JP7098273B2 (en) * | 2016-03-04 | 2022-07-11 | アプライド マテリアルズ インコーポレイテッド | Universal process kit |
| US10923385B2 (en) * | 2016-11-03 | 2021-02-16 | Lam Research Corporation | Carrier plate for use in plasma processing systems |
| KR102027110B1 (en) * | 2017-10-26 | 2019-10-01 | 에이피티씨 주식회사 | Wafer chuck including heater pattern and method of fabricating the same |
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2019
- 2019-10-15 KR KR1020190127682A patent/KR102077975B1/en active IP Right Grant
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- 2020-08-12 CN CN202010809687.9A patent/CN112670151B/en active Active
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101609779A (en) * | 2008-06-19 | 2009-12-23 | 东京毅力科创株式会社 | Focusing ring and plasma processing apparatus |
| CN105336561A (en) * | 2014-07-18 | 2016-02-17 | 中微半导体设备(上海)有限公司 | Plasma etching device |
| CN112447477A (en) * | 2019-08-29 | 2021-03-05 | 吉佳蓝科技股份有限公司 | Plasma processing apparatus including focus ring having improved plasma processing verticality |
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| Publication number | Publication date |
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| KR102077975B1 (en) | 2020-02-14 |
| TWI780467B (en) | 2022-10-11 |
| CN112670151A (en) | 2021-04-16 |
| TW202117792A (en) | 2021-05-01 |
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