CN105336561A - Plasma etching device - Google Patents
Plasma etching device Download PDFInfo
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- CN105336561A CN105336561A CN201410345048.6A CN201410345048A CN105336561A CN 105336561 A CN105336561 A CN 105336561A CN 201410345048 A CN201410345048 A CN 201410345048A CN 105336561 A CN105336561 A CN 105336561A
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Abstract
The invention discloses a plasma etching device capable of executing a deep groove graph etching process in an in situ mode and executing a free-graphics etching process. The device comprises a reaction chamber. The reaction chamber possesses a static chuck clamping a substrate, a mobile annular shielding component arranged on a periphery side of the substrate and located above the substrate, a driving unit used for driving the annular shielding component to move along a vertical direction and a control unit. When the deep groove graph etching process is about to be performed, the control unit makes the driving unit drive the annular shielding component to be positioned at a first position which is far away from the substrate. When the free-graphics etching process is about to be performed, the control unit makes the driving unit drive the annular shielding component to be positioned at a second position close to the substrate. By using the device, morphology control of high-aspect-ratio structure graph etching and uniformity of free-graphics etching can be effectively improved.
Description
Technical field
The present invention relates to semiconductor processing equipment, particularly a kind of plasma etching apparatus.
Background technology
Along with the raising of integrated circuit integrated level and the reduction of element live width, plasma etching (PlasmaEtching) technique obtains to be applied very widely.Plasma etch process is by configuring electrode in the reaction chamber of plasma etching apparatus, be supplied to using etching gas as reacting gas in reaction chamber, utilize on electrode, apply radio frequency and in reaction chamber the plasma of forming reactions gas, completed the dry etch process of etching by the atomic group, ion etc. generated by this plasma.
In recent years, utilize plasma etch process to form high aspect ratio structure, as TSV silicon through hole technology, paid attention to just more and more widely and study.The formation of high aspect ratio structure; pattern etching processing procedure is utilized to form patterned photoresist as mask layer at crystal column surface typically; then produce plasma with suitable reacting gas and used not by the etching area that mask layer is protected, thus etching deep trench.As a rule, after etching deep trench, also may perform do not need mask layer without pattern etching (blanketetching) processing procedure to carry out the high aspect ratio structure of the degree of depth desired by thinning final formation to formed deep trench.But, without in pattern etching processing procedure, because the fringe region of wafer is different from zone line etch rate, the etch rate of fringe region is fast, this will cause the inconsistent of each high aspect ratio structure etching depth, top characteristic size and bottom characteristic size within the scope of whole wafer, and then affects product yield.And if carry out respectively in different chamber high aspect ratio structure pattern etching and without pattern etching, the reduction of process efficiency and the increase of cost can be caused again.
For solving the problem, in prior art, one shield ring being set in wafer periphery, to reduce the bombardment of fringe region plasma, thus improving without etching homogeneity during pattern etching.As shown in Figure 1, plasma etching apparatus comprises reaction chamber 10, and wherein introducing has etching gas as reacting gas; The top of reaction chamber 10 is provided with reacting gas spray head 11, wherein comprises top electrode 15; Being provided with the electrostatic chuck 12 for clamping pending substrate W bottom reaction chamber 10, being wherein provided with the bottom electrode 16 relative with top electrode 15.Radio frequency source RF is applied on bottom electrode 16, between top electrode 15 and bottom electrode 16, form rf electric field, generates plasma to etching gas ionization.Focusing ring 13 is located at around substrate W, the either flush of its end face and substrate W, for restraining the plasma of substrate W surface.Shield ring 14 is arranged around focusing ring periphery, reduces to make the density of substrate edge part plasma for a part of plasma sheltered or cover substrate peripheral region, thus the etch rate of reduction wafer 30 edge.
But although adopt shield ring can improve without the etching homogeneity within the scope of substrate whole in pattern etching processing procedure, shield ring also have impact on the plasma density of fringe region simultaneously, deep trench section pattern in pattern etching processing procedure can be caused again to control not good.
Therefore, need to propose a kind of plasma etching apparatus and can improve the control of high aspect ratio structure pattern and the uniformity without pattern etching simultaneously.
Summary of the invention
Main purpose of the present invention is the defect overcoming prior art, and providing a kind of original position can perform pattern etching and do not affect the etching homogeneity of each etching processing procedure and the plasma etching apparatus of etch topography without pattern etching processing procedure.
For reaching above-mentioned purpose, the invention provides a kind of plasma etching apparatus, for original position execution deep trench pattern etching processing procedure with without pattern etching processing procedure, it comprises reaction chamber, it has electrostatic chuck for clamping pending substrate and moveable ring-type curtain-shaped cover member, and ring-type curtain-shaped cover member is located at described substrate peripheral side and is positioned at the top of described substrate; Driver element, moves in vertical direction for driving described ring-type curtain-shaped cover member; And control unit, be connected with described driver element, it controls ring-type curtain-shaped cover member described in described drive unit drives when pending described deep trench pattern etching processing procedure and is positioned the primary importance away from described substrate, in the pending described second place without controlling ring-type curtain-shaped cover member described in described drive unit drives during pattern etching processing procedure and be positioned contiguous described substrate.
Preferably, described reaction chamber also comprises the focusing ring around described substrate, and described focusing ring is positioned at below ring-type curtain-shaped cover member.
Preferably, described reaction chamber also comprises the cover ring around described focusing ring, and described cover ring is positioned at below described ring-type curtain-shaped cover member and its upper surface is concordant with the upper surface of described focusing ring.
Preferably, described ring-type curtain-shaped cover member is shield ring or gas channeling ring.
Preferably, the inner peripheral surface of described shield ring is the taper surface from up to down extended radially outwardly.
Preferably, the cross sectional shape of described gas channeling ring is rectangle.
Preferably, when described ring-type curtain-shaped cover member is positioned the described second place, the distance of its lower surface and described substrate upper surface is 1 ~ 2mm.
Preferably, when described shield ring is positioned described primary importance, the distance of its lower surface and described substrate upper surface is 15 ~ 30mm; Described gas channeling loop mapping is when described primary importance, and the distance of its lower surface and described substrate upper surface is 30 ~ 60mm.
Preferably, described ring-type curtain-shaped cover member extends radially inwardly-5mm ~ 5mm from the edge of described substrate in the horizontal direction.
Preferably, the upper surface of described focusing ring and described cover ring protrudes from the upper surface 1 ~ 2mm of described substrate.
Preferably, when described ring-type curtain-shaped cover member is positioned the described second place, its lower surface fits in the upper surface of described focusing ring and described cover ring.
Preferably, the material of described shield ring is selected from quartz or pottery, and the material of described gas channeling ring is selected from aluminium.
Present invention also offers a kind of lithographic method applying above-mentioned plasma etching apparatus, described lithographic method comprises original position execution deep trench pattern etching processing procedure and without pattern etching processing procedure, it comprises the following steps: described ring-type curtain-shaped cover member is positioned to described primary importance; Carry out described deep trench pattern etching processing procedure; Described ring-type curtain-shaped cover member is positioned to the described second place; And carry out described without pattern etching processing procedure.
Compared to prior art, plasma etching apparatus of the present invention utilize deep trench pattern etching processing procedure and without pattern etching processing procedure in be positioned liftable ring-type curtain-shaped cover member respectively in reaction chamber diverse location, the original position that can realize two kinds of etching processing procedures performs, homogeneity and the etch topography of the etch rate simultaneously in each etching processing procedure are all kept, and improve process efficiency and product yield.
Accompanying drawing explanation
Fig. 1 is the structural representation of plasma etching apparatus in prior art;
Fig. 2 a is that the plasma etching apparatus of one embodiment of the invention carries out without structural representation during pattern etching;
Fig. 2 b is the structural representation that the plasma etching apparatus of one embodiment of the invention carries out when high aspect ratio structure etches;
Fig. 3 is the structural representation of the plasma etching apparatus of another embodiment of the present invention;
Fig. 4 is the schematic flow sheet of the lithographic method of application one embodiment of the invention plasma etching apparatus.
Embodiment
For making content of the present invention clearly understandable, below in conjunction with Figure of description, content of the present invention is described further.Certain the present invention is not limited to this specific embodiment, and the general replacement known by those skilled in the art is also encompassed in protection scope of the present invention.
Fig. 2 and Fig. 3 shows the different execution modes of plasma treatment appts of the present invention, can original position (in-situ) perform for the formation of the deep trench pattern etching processing procedure of high aspect ratio structure with without pattern etching processing procedure in plasma etching apparatus of the present invention, should be appreciated that, plasma etching apparatus is only exemplary, it can comprise less or more element, or the arrangement of this element may be to that indicated in the drawings identical or different.
Embodiment 1
Refer to Fig. 2 a and Fig. 2 b, it is depicted as the structural representation of the present embodiment plasma etching apparatus.Plasma etching apparatus comprises reaction chamber 20, the top of reaction chamber 20 is provided with reacting gas spray head 21, reacting gas spray head 21 comprises top electrode, being provided with the electrostatic chuck 22 for clamping pending substrate W bottom reaction chamber 20, in electrostatic chuck 22, being provided with the bottom electrode relative with top electrode.Radio frequency source RF applies on the bottom electrode, generates plasma to form rf electric field to etching gas ionization.Liftable ring-type curtain-shaped cover member 23 is provided with in substrate peripheral side.As shown in the figure, ring-type curtain-shaped cover member 23 is positioned the surface of substrate W in a non-contact manner by support bar 24.It is three that support bar 24 circumference be preferably along ring-type curtain-shaped cover member 23 is uniformly distributed, and its one end is fixedly connected with ring-type curtain-shaped cover member 23, and the other end connects driver element 25.In the present embodiment, driver element 25 is located at the bottom of reaction chamber 20, and it can comprise the equipment such as motor, cylinder, is elevated in the vertical direction to make ring-type curtain-shaped cover member 23 close to or away from substrate W for making support bar 24 and ring-type curtain-shaped cover member 23.The control unit 26 being positioned at reaction chamber outside is connected with driver element 25, and it sends corresponding control signal to driver element 25 to carry out the descending operation of ring-type curtain-shaped cover member 23 according to the etching processing procedure carried out in reaction chamber.Specifically, when in reaction chamber 20 during pending deep trench pattern etching processing procedure, control unit 26 sends the first control signal makes driver element 25 drive link drive ring-type curtain-shaped cover member 23 to be positioned to primary importance away from substrate W, then carries out deep trench pattern etching.Because ring-type curtain-shaped cover member 23 is away from substrate surface, the plasma density when pattern etching near substrate W surface is not vulnerable to the impact of ring-type curtain-shaped cover member 23, and the section pattern of the deep trench that substrate W fringe region etches is ensured.And when in reaction chamber 20 pending without pattern etching processing procedure to adjust the degree of depth of deep trench formed time, control unit 26 sends the second control signal makes driver element 25 drive link drive ring-type curtain-shaped cover member 23 to be positioned to the second place close to substrate W, and then performs without pattern etching.Due to ring-type curtain-shaped cover member 23 adjacent substrate surface, blocking portion divides Plasma contact substrate periphery, thus reduce the etch rate at substrate edge place, ensure that the etching homogeneity of whole substrate surface, and then improve the homogeneity of the etching depth of each high aspect ratio structure, top characteristic size and bottom characteristic size.
In the present embodiment, ring-type curtain-shaped cover member 23 is the shield ring (shadowring) that the such as insulating material such as pottery or quartz is made, when carrying out dropping to the second place without pattern etching shield ring 23 by driver element 25, its lower surface is positioned at 1 ~ 2mm above substrate, when carrying out pattern etching shield ring 23 and rising to primary importance by driver element 25, its lower surface is positioned at 15 ~ 30mm above substrate.The inner peripheral surface of shield ring 23 is the taper surface from up to down extended radially outwardly, and forms a protuberance thus on top.This protuberance with the distance of substrate edge is in the horizontal direction ± 5mm scope within.When being in without pattern etching processing procedure, the design of this sloped shoulders suitably weakens the plasma arriving crested ring 23 shaded areas, makes the etching speed of substrate W central area and fringe region suitable.
Please continue to refer to Fig. 2 a and Fig. 2 b, in the present embodiment, focusing ring 27 and cover ring 28 is also comprised in reaction chamber.Focusing ring 27 and cover ring 28 are all positioned at below shield ring 23.Focusing ring 27 is concordant with the upper surface of cover ring 28, slightly protrudes from the end face of pending substrate W, is generally 1 ~ 2mm.Therefore, the upper surface of focusing ring 27 and cover ring 28 directly can be fitted in when shield ring 23 is in the second place.Wherein, focusing ring 27 is located at the outer circumferential side of pending substrate W, and it in order to provide the environment of a relative closure around substrate W, and confined plasma is to improve the homogeneity of substrate surface plasma.Cover ring 28 is arranged around focusing ring 27.Top surface due to electrostatic chuck is be focused ring 27 and cover ring 28 covered all the time; in the etching process deep trench pattern etching processing procedure that particularly shield ring 23 rises; can reduce the degree of exposure of the reactive materials of electrostatic chuck top surface plasma or this plasma, protection electrostatic chuck is from loss.Focusing ring 27 and cover ring 28 all can adopt the insulating material such as pottery or quartz to be formed.In addition, be in the second place owing to that is to say when shield ring 23 fits in the upper surface of focusing ring 27 and cover ring 28, locate reliably convenient.
Embodiment 2
Fig. 3 is the structural representation of another embodiment of plasma etching apparatus provided by the present invention, and its feature is moveable ring-type curtain-shaped cover member 23 is gas channeling ring.Gas channeling ring 23 is located at the surface of substrate W non-contactly by support bar 24.It is three that support bar 24 circumference be preferably along gas channeling ring 23 is uniformly distributed, and its one end is fixedly connected with gas channeling ring 23, and the other end connects driver element 25.The signal that driver element 25 receives from control unit 26 drives support bar to drive gas channeling ring 23 to move in vertical direction.Miscellaneous part in plasma etching apparatus, is arranged as electrostatic chuck 22, gas spray 21, control unit 26 and driver element 25 etc. all can refer to previous embodiment.
Reacting gas in bootable reaction chamber 20 of gas channeling ring 23 itself improves air flow method, and in the present embodiment, gas channeling ring also may correspond to deep trench pattern etching and moves in the vertical direction without the different etching processing procedure of pattern etching in addition.When carrying out deep trench pattern etching processing procedure, control unit 26 will send first and will control signal to driver element 25, and driver element 25 driving gas guide ring 23 is positioned to primary importance, and the lower surface of gas channeling ring 23 is positioned at 30mm ~ 60mm above substrate.When carrying out without pattern etching processing procedure, control unit 26 will send second and will control signal to driver element 25, and driver element 25 driving gas guide ring 23 is positioned to the second place, and gas channeling ring lower surface is positioned at 1 ~ 2mm above substrate.The cross sectional shape of gas channeling ring 23 can be rectangle, and material is such as aluminium.Gas channeling ring extends radially inwardly-5mm ~ 5mm from the edge of substrate in the horizontal direction.
In the present embodiment, in the reaction chamber 20 of plasma etching apparatus, also can comprise focusing ring 27 and cover ring 28.Focusing ring 27 and cover ring 28 to be all positioned at below gas channeling ring 23 and still can directly to fit on the surface of focusing ring 27 and cover ring 28 when gas channeling ring 23 drops to the second place.Focusing ring 27 is concordant with the upper surface of cover ring 28, slightly protrudes from the end face 1 ~ 2mm of pending substrate W.Focusing ring 27 and arranging of cover ring 28 all can refer to previous embodiment.
It should be noted that, for plasma etching apparatus of the present invention, ring-type curtain-shaped cover member can adopt various shape, dimensional parameters according to the requirement without substrate etching homogeneity in pattern etching processing procedure, or is made up of different materials.
Next please refer to Fig. 4, it is depicted as application plasma etching apparatus original position of the present invention and performs deep trench pattern etching and the schematic flow sheet without pattern etching processing procedure, and it can specifically comprise:
Step 41, ring-type curtain-shaped cover member is positioned to primary importance;
In this step, control unit sends first and controls signal to driver element, makes drive unit drives ring-type curtain-shaped cover member rise to primary importance away from substrate surface.
Step 42, carry out deep trench pattern etching processing procedure;
In this step, with patterned photoresist for etching hard mask, form deep groove structure with conventional plasma etch technique.
Step 43, ring-type curtain-shaped cover member is positioned to the second place;
In this step, control unit sends second and controls signal to driver element, such that drive unit drives ring-type curtain-shaped cover member drops to the second place and adjacent substrate is surperficial.
Step 44, to carry out without pattern etching processing procedure.
In this step, do not adopt hard masking film, carry out plasma etching, make the degree of depth that the degree of depth of deep groove structure reaches desired.
In sum, plasma etching apparatus of the present invention, utilize deep trench pattern etching processing procedure and without pattern etching processing procedure in be positioned liftable ring-type curtain-shaped cover member in reaction chamber diverse location, the original position that can realize two kinds of etching processing procedures performs, homogeneity and the etch topography of the etch rate simultaneously in each etching processing procedure are all kept, and improve process efficiency and product yield.
Although the present invention discloses as above with preferred embodiment; right described many embodiments are citing for convenience of explanation only; and be not used to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection range that the present invention advocates should be as the criterion with described in claims.
Claims (13)
1. a plasma etching apparatus, for original position execution deep trench pattern etching processing procedure with without pattern etching processing procedure, it is characterized in that, this plasma etching apparatus comprises:
Reaction chamber, it has:
For clamping the electrostatic chuck of pending substrate;
Moveable ring-type curtain-shaped cover member, is located at described substrate peripheral side and is positioned at the top of described substrate;
Driver element, moves in vertical direction for driving described ring-type curtain-shaped cover member; And
Control unit, be connected with described driver element, it controls ring-type curtain-shaped cover member described in described drive unit drives when pending described deep trench pattern etching processing procedure and is positioned the primary importance away from described substrate, in the pending described second place without controlling ring-type curtain-shaped cover member described in described drive unit drives during pattern etching processing procedure and be positioned contiguous described substrate.
2. plasma etching apparatus according to claim 1, is characterized in that, described reaction chamber also comprises the focusing ring around described substrate, and described focusing ring is positioned at below ring-type curtain-shaped cover member.
3. plasma etching apparatus according to claim 2, it is characterized in that, described reaction chamber also comprises the cover ring around described focusing ring, and described cover ring is positioned at below described ring-type curtain-shaped cover member and its upper surface is concordant with the upper surface of described focusing ring.
4. plasma etching apparatus according to claim 1, is characterized in that, described ring-type curtain-shaped cover member is shield ring or gas channeling ring.
5. plasma etching apparatus according to claim 4, is characterized in that, the inner peripheral surface of described shield ring is the taper surface from up to down extended radially outwardly.
6. plasma etching apparatus according to claim 4, is characterized in that, the cross sectional shape of described gas channeling ring is rectangle.
7. plasma etching apparatus according to claim 4, is characterized in that, when described ring-type curtain-shaped cover member is positioned the described second place, the distance of its lower surface and described substrate upper surface is 1 ~ 2mm.
8. plasma etching apparatus according to claim 4, is characterized in that, when described shield ring is positioned described primary importance, the distance of its lower surface and described substrate upper surface is 15 ~ 30mm; Described gas channeling loop mapping is when described primary importance, and the distance of its lower surface and described substrate upper surface is 30 ~ 60mm.
9. plasma etching apparatus according to claim 8, is characterized in that, described ring-type curtain-shaped cover member extends radially inwardly-5mm ~ 5mm from the edge of described substrate in the horizontal direction.
10. plasma etching apparatus according to claim 3, is characterized in that, the upper surface of described focusing ring and described cover ring protrudes from the upper surface 1 ~ 2mm of described substrate.
11. plasma etching apparatus according to claim 10, is characterized in that, when described ring-type curtain-shaped cover member is positioned the described second place, its lower surface fits in the upper surface of described focusing ring and described cover ring.
12. plasma etching apparatus according to claim 4, is characterized in that, the material of described shield ring is selected from quartz or pottery, and the material of described gas channeling ring is selected from aluminium.
The lithographic method of the plasma etching apparatus of 13. 1 kinds of application as described in any one of claim 1 to 12, described lithographic method comprises original position execution deep trench pattern etching processing procedure and without pattern etching processing procedure, it comprises the following steps:
Described ring-type curtain-shaped cover member is positioned to described primary importance;
Carry out described deep trench pattern etching processing procedure;
Described ring-type curtain-shaped cover member is positioned to the described second place; And
Carry out described without pattern etching processing procedure.
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| CN201410345048.6A CN105336561B (en) | 2014-07-18 | 2014-07-18 | Plasma etching apparatus |
| TW103143954A TWI570802B (en) | 2014-07-18 | 2014-12-16 | Electrolytic etching device |
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| CN201410345048.6A CN105336561B (en) | 2014-07-18 | 2014-07-18 | Plasma etching apparatus |
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| CN105336561B CN105336561B (en) | 2017-07-21 |
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI570802B (en) | 2017-02-11 |
| CN105336561B (en) | 2017-07-21 |
| TW201604954A (en) | 2016-02-01 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |